Patent
US 10,043,869METHOD OF PREPARING GRAPHENE-BASED THIN-FILM LAMINATE AND GRAPHENE-BASED THIN-FILM LAMINATE PREPARED USING THE SAME
ChongHan PARK
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,043,869Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a view sequentially illustrating a method of preparing a graphene-based thin-film laminate, according to an exemplary embodiment; [15]
FIG. 2 is a schematic view of a graphene-based thin-film laminate prepared using the method illustrated in
FIGS. 3A and 3B are scanning electron microscope (SEM) images of a graphene-based laminate prepared according to Comparative Example 1 and a graphene-based A l …
FIG. 4 is a graph showing light transmittance measurement results of a graphene-based laminate prepared according to Comparative Reference Example 1 and a …
FIG. 5 is a graph showing average sheet resistance measurement results of a graphene-based AZO thin-film laminate prepared according to Example 2, the …
FIG. 6 is a schematic view of an organic light emitting device according to an embodiment; [20]
FIG. 7 is a schematic view of a back-gated field effect transistor according to an embodiment; and [21]
FIG. 8 is a graph showing a charge neutral point voltage V N P and charge mobility of each of graphene-based AZO thin-film laminates prepared 4 according to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of preparing a graphene-based thin-film laminate, the method comprising conducting a cycle N times, the cycle comprising: (a) contacting a surface of graphene transferred onto a substrate at room temperature with a non-metal precursor gas and activating the surface of graphene with plasma at the same time; (b) performing a first purging on the non-metal precursor contacted and plasma-activated surface of the graphene using an inert gas; (c) contacting the first-purged surface of the graphene with a metal precursor gas, the metal precursor gas being an aluminum precursor gas or a zin c precursor gas; and (d) performing a second purging on the metal precursor gas contacted surface of the graphene using an inert gas, wherein the N times consist of at least one cycle using the aluminum precursor gas in step (c) and at least one cycle using the zin c precursor gas in step (c), and the N times are 60 times or less, and wherein a ratio of a number of cycles using the aluminum precursor gas in step (c) to a number of cycles using the zin c precursor gas in step (c) is 1:13 to 1:49. Previously presented
: The method of claim 1, wherein the N times are 14 to 60 times. Previously presented
: The method of claim 1, wherein the aluminum precursor gas comprises an aluminum halide, an organoaluminum compound, or a combination thereof. Previously presented
: The method of claim 1, wherein the zin c precursor gas is an organozin c compound. Previously presented
: The method of claim 1, wherein in steps (a) and (c), a temperature of the surface of graphene is from about 80 ° C to about 100 ° C when contacting with the non-metal precursor gas or the metal precursor gas, respectively. Previously presented
: The method of claim 1, wherein the substrate is maintained at a temperature of 100 ° C or less throughout the cycle. Original
: A graphene-based thin-film laminate prepared using the method according to claim 1. Withdrawn
: The method of claim 1, wherein the ratio of the number of cycles using the aluminum precursor gas in step (c) to the number of cycles using the zin c precursor gas in step (c) is 1:13 to 1:19. New
. Canceled
. Canceled
: A graphene-based thin-film laminate comprising: a substrate; graphene formed on the substrate; and Al-doped ZnO (AZO) film formed above a surface of the graphene. Withdrawn
: The graphene-based thin-film laminate of claim 15, wherein the AZO film comprises an A 1 2 0 3 layer and a ZnO layer sequentially stacked on the surface. Withdrawn
: An organic light emitting device comprising: a first electrode comprising the graphene-based thin-film laminate of claim 15; a hole injection layer formed above the first electrode; a hole transport layer formed above the hole injection layer; an emission layer formed above the hole transport layer; an electron transport layer formed above the emission layer; an electron injection layer formed above the electron transport layer; and a second electrode. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based thin-film laminate
organic light emitting device (OLED)
Materials described outside the worked examples.
graphene
non-metal precursor gas
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 3A and 3B are scanning electron microscope (SEM) images of a graphene-based laminate prepared according to Comparative Example 1 and a graphene-based A l …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sheet resistance of graphene-based thin-film laminate | ≤ 250 Ω/sq | grapheneAl-doped ZnO (AZO) film |
aluminum content in thin film |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,043,869Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a view sequentially illustrating a method of preparing a graphene-based thin-film laminate, according to an exemplary embodiment; [15]
FIG. 2 is a schematic view of a graphene-based thin-film laminate prepared using the method illustrated in
FIGS. 3A and 3B are scanning electron microscope (SEM) images of a graphene-based laminate prepared according to Comparative Example 1 and a graphene-based A l …
FIG. 4 is a graph showing light transmittance measurement results of a graphene-based laminate prepared according to Comparative Reference Example 1 and a …
FIG. 5 is a graph showing average sheet resistance measurement results of a graphene-based AZO thin-film laminate prepared according to Example 2, the …
FIG. 6 is a schematic view of an organic light emitting device according to an embodiment; [20]
FIG. 7 is a schematic view of a back-gated field effect transistor according to an embodiment; and [21]
FIG. 8 is a graph showing a charge neutral point voltage V N P and charge mobility of each of graphene-based AZO thin-film laminates prepared 4 according to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of preparing a graphene-based thin-film laminate, the method comprising conducting a cycle N times, the cycle comprising: (a) contacting a surface of graphene transferred onto a substrate at room temperature with a non-metal precursor gas and activating the surface of graphene with plasma at the same time; (b) performing a first purging on the non-metal precursor contacted and plasma-activated surface of the graphene using an inert gas; (c) contacting the first-purged surface of the graphene with a metal precursor gas, the metal precursor gas being an aluminum precursor gas or a zin c precursor gas; and (d) performing a second purging on the metal precursor gas contacted surface of the graphene using an inert gas, wherein the N times consist of at least one cycle using the aluminum precursor gas in step (c) and at least one cycle using the zin c precursor gas in step (c), and the N times are 60 times or less, and wherein a ratio of a number of cycles using the aluminum precursor gas in step (c) to a number of cycles using the zin c precursor gas in step (c) is 1:13 to 1:49. Previously presented
: The method of claim 1, wherein the N times are 14 to 60 times. Previously presented
: The method of claim 1, wherein the aluminum precursor gas comprises an aluminum halide, an organoaluminum compound, or a combination thereof. Previously presented
: The method of claim 1, wherein the zin c precursor gas is an organozin c compound. Previously presented
: The method of claim 1, wherein in steps (a) and (c), a temperature of the surface of graphene is from about 80 ° C to about 100 ° C when contacting with the non-metal precursor gas or the metal precursor gas, respectively. Previously presented
: The method of claim 1, wherein the substrate is maintained at a temperature of 100 ° C or less throughout the cycle. Original
: A graphene-based thin-film laminate prepared using the method according to claim 1. Withdrawn
: The method of claim 1, wherein the ratio of the number of cycles using the aluminum precursor gas in step (c) to the number of cycles using the zin c precursor gas in step (c) is 1:13 to 1:19. New
. Canceled
. Canceled
: A graphene-based thin-film laminate comprising: a substrate; graphene formed on the substrate; and Al-doped ZnO (AZO) film formed above a surface of the graphene. Withdrawn
: The graphene-based thin-film laminate of claim 15, wherein the AZO film comprises an A 1 2 0 3 layer and a ZnO layer sequentially stacked on the surface. Withdrawn
: An organic light emitting device comprising: a first electrode comprising the graphene-based thin-film laminate of claim 15; a hole injection layer formed above the first electrode; a hole transport layer formed above the hole injection layer; an emission layer formed above the hole transport layer; an electron transport layer formed above the emission layer; an electron injection layer formed above the electron transport layer; and a second electrode. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based thin-film laminate
organic light emitting device (OLED)
Materials described outside the worked examples.
graphene
non-metal precursor gas
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 3A and 3B are scanning electron microscope (SEM) images of a graphene-based laminate prepared according to Comparative Example 1 and a graphene-based A l …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sheet resistance of graphene-based thin-film laminate | ≤ 250 Ω/sq | grapheneAl-doped ZnO (AZO) film |
aluminum content in thin film |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,043,869Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a view sequentially illustrating a method of preparing a graphene-based thin-film laminate, according to an exemplary embodiment; [15]
FIG. 2 is a schematic view of a graphene-based thin-film laminate prepared using the method illustrated in
FIGS. 3A and 3B are scanning electron microscope (SEM) images of a graphene-based laminate prepared according to Comparative Example 1 and a graphene-based A l …
FIG. 4 is a graph showing light transmittance measurement results of a graphene-based laminate prepared according to Comparative Reference Example 1 and a …
FIG. 5 is a graph showing average sheet resistance measurement results of a graphene-based AZO thin-film laminate prepared according to Example 2, the …
FIG. 6 is a schematic view of an organic light emitting device according to an embodiment; [20]
FIG. 7 is a schematic view of a back-gated field effect transistor according to an embodiment; and [21]
FIG. 8 is a graph showing a charge neutral point voltage V N P and charge mobility of each of graphene-based AZO thin-film laminates prepared 4 according to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of preparing a graphene-based thin-film laminate, the method comprising conducting a cycle N times, the cycle comprising: (a) contacting a surface of graphene transferred onto a substrate at room temperature with a non-metal precursor gas and activating the surface of graphene with plasma at the same time; (b) performing a first purging on the non-metal precursor contacted and plasma-activated surface of the graphene using an inert gas; (c) contacting the first-purged surface of the graphene with a metal precursor gas, the metal precursor gas being an aluminum precursor gas or a zin c precursor gas; and (d) performing a second purging on the metal precursor gas contacted surface of the graphene using an inert gas, wherein the N times consist of at least one cycle using the aluminum precursor gas in step (c) and at least one cycle using the zin c precursor gas in step (c), and the N times are 60 times or less, and wherein a ratio of a number of cycles using the aluminum precursor gas in step (c) to a number of cycles using the zin c precursor gas in step (c) is 1:13 to 1:49. Previously presented
: The method of claim 1, wherein the N times are 14 to 60 times. Previously presented
: The method of claim 1, wherein the aluminum precursor gas comprises an aluminum halide, an organoaluminum compound, or a combination thereof. Previously presented
: The method of claim 1, wherein the zin c precursor gas is an organozin c compound. Previously presented
: The method of claim 1, wherein in steps (a) and (c), a temperature of the surface of graphene is from about 80 ° C to about 100 ° C when contacting with the non-metal precursor gas or the metal precursor gas, respectively. Previously presented
: The method of claim 1, wherein the substrate is maintained at a temperature of 100 ° C or less throughout the cycle. Original
: A graphene-based thin-film laminate prepared using the method according to claim 1. Withdrawn
: The method of claim 1, wherein the ratio of the number of cycles using the aluminum precursor gas in step (c) to the number of cycles using the zin c precursor gas in step (c) is 1:13 to 1:19. New
. Canceled
. Canceled
: A graphene-based thin-film laminate comprising: a substrate; graphene formed on the substrate; and Al-doped ZnO (AZO) film formed above a surface of the graphene. Withdrawn
: The graphene-based thin-film laminate of claim 15, wherein the AZO film comprises an A 1 2 0 3 layer and a ZnO layer sequentially stacked on the surface. Withdrawn
: An organic light emitting device comprising: a first electrode comprising the graphene-based thin-film laminate of claim 15; a hole injection layer formed above the first electrode; a hole transport layer formed above the hole injection layer; an emission layer formed above the hole transport layer; an electron transport layer formed above the emission layer; an electron injection layer formed above the electron transport layer; and a second electrode. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based thin-film laminate
organic light emitting device (OLED)
Materials described outside the worked examples.
graphene
non-metal precursor gas
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 3A and 3B are scanning electron microscope (SEM) images of a graphene-based laminate prepared according to Comparative Example 1 and a graphene-based A l …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sheet resistance of graphene-based thin-film laminate | ≤ 250 Ω/sq | grapheneAl-doped ZnO (AZO) film |
aluminum content in thin film |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,043,869Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a view sequentially illustrating a method of preparing a graphene-based thin-film laminate, according to an exemplary embodiment; [15]
FIG. 2 is a schematic view of a graphene-based thin-film laminate prepared using the method illustrated in
FIGS. 3A and 3B are scanning electron microscope (SEM) images of a graphene-based laminate prepared according to Comparative Example 1 and a graphene-based A l …
FIG. 4 is a graph showing light transmittance measurement results of a graphene-based laminate prepared according to Comparative Reference Example 1 and a …
FIG. 5 is a graph showing average sheet resistance measurement results of a graphene-based AZO thin-film laminate prepared according to Example 2, the …
FIG. 6 is a schematic view of an organic light emitting device according to an embodiment; [20]
FIG. 7 is a schematic view of a back-gated field effect transistor according to an embodiment; and [21]
FIG. 8 is a graph showing a charge neutral point voltage V N P and charge mobility of each of graphene-based AZO thin-film laminates prepared 4 according to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of preparing a graphene-based thin-film laminate, the method comprising conducting a cycle N times, the cycle comprising: (a) contacting a surface of graphene transferred onto a substrate at room temperature with a non-metal precursor gas and activating the surface of graphene with plasma at the same time; (b) performing a first purging on the non-metal precursor contacted and plasma-activated surface of the graphene using an inert gas; (c) contacting the first-purged surface of the graphene with a metal precursor gas, the metal precursor gas being an aluminum precursor gas or a zin c precursor gas; and (d) performing a second purging on the metal precursor gas contacted surface of the graphene using an inert gas, wherein the N times consist of at least one cycle using the aluminum precursor gas in step (c) and at least one cycle using the zin c precursor gas in step (c), and the N times are 60 times or less, and wherein a ratio of a number of cycles using the aluminum precursor gas in step (c) to a number of cycles using the zin c precursor gas in step (c) is 1:13 to 1:49. Previously presented
: The method of claim 1, wherein the N times are 14 to 60 times. Previously presented
: The method of claim 1, wherein the aluminum precursor gas comprises an aluminum halide, an organoaluminum compound, or a combination thereof. Previously presented
: The method of claim 1, wherein the zin c precursor gas is an organozin c compound. Previously presented
: The method of claim 1, wherein in steps (a) and (c), a temperature of the surface of graphene is from about 80 ° C to about 100 ° C when contacting with the non-metal precursor gas or the metal precursor gas, respectively. Previously presented
: The method of claim 1, wherein the substrate is maintained at a temperature of 100 ° C or less throughout the cycle. Original
: A graphene-based thin-film laminate prepared using the method according to claim 1. Withdrawn
: The method of claim 1, wherein the ratio of the number of cycles using the aluminum precursor gas in step (c) to the number of cycles using the zin c precursor gas in step (c) is 1:13 to 1:19. New
. Canceled
. Canceled
: A graphene-based thin-film laminate comprising: a substrate; graphene formed on the substrate; and Al-doped ZnO (AZO) film formed above a surface of the graphene. Withdrawn
: The graphene-based thin-film laminate of claim 15, wherein the AZO film comprises an A 1 2 0 3 layer and a ZnO layer sequentially stacked on the surface. Withdrawn
: An organic light emitting device comprising: a first electrode comprising the graphene-based thin-film laminate of claim 15; a hole injection layer formed above the first electrode; a hole transport layer formed above the hole injection layer; an emission layer formed above the hole transport layer; an electron transport layer formed above the emission layer; an electron injection layer formed above the electron transport layer; and a second electrode. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based thin-film laminate
organic light emitting device (OLED)
Materials described outside the worked examples.
graphene
non-metal precursor gas
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 3A and 3B are scanning electron microscope (SEM) images of a graphene-based laminate prepared according to Comparative Example 1 and a graphene-based A l …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sheet resistance of graphene-based thin-film laminate | ≤ 250 Ω/sq | grapheneAl-doped ZnO (AZO) film |
aluminum content in thin film |
Related documents with shared materials, methods, properties, or citations.
transistor
aluminum precursor gas
zinc precursor gas (organozinc compound)
diethyl zinc
Zn(C₂H₅)2
Al-doped ZnO (AZO) film
Al₂O₃ layer
Al₂O₃
ZnO layer
ZnO
indium tin oxide (ITO)
indium zinc oxide (IZO)
tin oxide
SnO₂
aluminum
Al
silver
Ag
magnesium
Mg
polyethylene terephthalate (PET)
polyimide (PI)
SiO₂
FIG. 4 is a graph showing light transmittance measurement results of a graphene-based laminate prepared according to Comparative Reference Example 1 and a …
FIG. 5 is a graph showing average sheet resistance measurement results of a graphene-based AZO thin-film laminate prepared according to Example 2, the …
FIG. 5 is a graph showing average sheet resistance measurement results of a graphene-based AZO thin-film laminate prepared according to Example 2, the …
FIG. 7 is a schematic view of a back-gated field effect transistor according to an embodiment; and [21]
FIG. 8 is a graph showing a charge neutral point voltage V N P and charge mobility of each of graphene-based AZO thin-film laminates prepared 4 according to …
FIG. 8 is a graph showing a charge neutral point voltage V N P and charge mobility of each of graphene-based AZO thin-film laminates prepared 4 according to …
| 0.7–2.8 atomic % |
Al-doped ZnO (AZO) film |
average thickness of Al2O3 and ZnO layers | ≤ 10 nm | Al₂O₃ZnO |
Thickness | 300–800 nm | — |
Voltage | 5–10 V | — |
Voltage | 7–15 V | — |
Thickness | 10–1000 mm | — |
Flow Rate | 1–1000 sccm | — |
Duration | 1–100 seconds | — |
Thickness | 0.5–10 nm | — |
Thickness | 0.5–50 nm | — |
Thickness | 1–10 nm | — |
Thickness | 100–300 nm | — |
Thickness | 0.1–0.2 nm | — |
Thickness | 1.3–2.6 nm | — |
Thickness | 1.9–3.8 nm | — |
Thickness | 4.9–9.8 nm | — |
Thickness | 3.8–7.6 nm | — |
Thickness | 0.2–0.4 nm | — |
Thickness | 5.7–11.4 nm | — |
Thickness | 0.3–0.6 nm | — |
Thickness | 5–10 nm | — |
Thickness | 1.2–2.4 nm | — |
Pressure | 1e-8 torr | — |
Temperature | 80–100 °C | — |
transistor
aluminum precursor gas
zinc precursor gas (organozinc compound)
diethyl zinc
Zn(C₂H₅)2
Al-doped ZnO (AZO) film
Al₂O₃ layer
Al₂O₃
ZnO layer
ZnO
indium tin oxide (ITO)
indium zinc oxide (IZO)
tin oxide
SnO₂
aluminum
Al
silver
Ag
magnesium
Mg
polyethylene terephthalate (PET)
polyimide (PI)
SiO₂
FIG. 4 is a graph showing light transmittance measurement results of a graphene-based laminate prepared according to Comparative Reference Example 1 and a …
FIG. 5 is a graph showing average sheet resistance measurement results of a graphene-based AZO thin-film laminate prepared according to Example 2, the …
FIG. 5 is a graph showing average sheet resistance measurement results of a graphene-based AZO thin-film laminate prepared according to Example 2, the …
FIG. 7 is a schematic view of a back-gated field effect transistor according to an embodiment; and [21]
FIG. 8 is a graph showing a charge neutral point voltage V N P and charge mobility of each of graphene-based AZO thin-film laminates prepared 4 according to …
FIG. 8 is a graph showing a charge neutral point voltage V N P and charge mobility of each of graphene-based AZO thin-film laminates prepared 4 according to …
| 0.7–2.8 atomic % |
Al-doped ZnO (AZO) film |
average thickness of Al2O3 and ZnO layers | ≤ 10 nm | Al₂O₃ZnO |
Thickness | 300–800 nm | — |
Voltage | 5–10 V | — |
Voltage | 7–15 V | — |
Thickness | 10–1000 mm | — |
Flow Rate | 1–1000 sccm | — |
Duration | 1–100 seconds | — |
Thickness | 0.5–10 nm | — |
Thickness | 0.5–50 nm | — |
Thickness | 1–10 nm | — |
Thickness | 100–300 nm | — |
Thickness | 0.1–0.2 nm | — |
Thickness | 1.3–2.6 nm | — |
Thickness | 1.9–3.8 nm | — |
Thickness | 4.9–9.8 nm | — |
Thickness | 3.8–7.6 nm | — |
Thickness | 0.2–0.4 nm | — |
Thickness | 5.7–11.4 nm | — |
Thickness | 0.3–0.6 nm | — |
Thickness | 5–10 nm | — |
Thickness | 1.2–2.4 nm | — |
Pressure | 1e-8 torr | — |
Temperature | 80–100 °C | — |
transistor
aluminum precursor gas
zinc precursor gas (organozinc compound)
diethyl zinc
Zn(C₂H₅)2
Al-doped ZnO (AZO) film
Al₂O₃ layer
Al₂O₃
ZnO layer
ZnO
indium tin oxide (ITO)
indium zinc oxide (IZO)
tin oxide
SnO₂
aluminum
Al
silver
Ag
magnesium
Mg
polyethylene terephthalate (PET)
polyimide (PI)
SiO₂
FIG. 4 is a graph showing light transmittance measurement results of a graphene-based laminate prepared according to Comparative Reference Example 1 and a …
FIG. 5 is a graph showing average sheet resistance measurement results of a graphene-based AZO thin-film laminate prepared according to Example 2, the …
FIG. 5 is a graph showing average sheet resistance measurement results of a graphene-based AZO thin-film laminate prepared according to Example 2, the …
FIG. 7 is a schematic view of a back-gated field effect transistor according to an embodiment; and [21]
FIG. 8 is a graph showing a charge neutral point voltage V N P and charge mobility of each of graphene-based AZO thin-film laminates prepared 4 according to …
FIG. 8 is a graph showing a charge neutral point voltage V N P and charge mobility of each of graphene-based AZO thin-film laminates prepared 4 according to …
| 0.7–2.8 atomic % |
Al-doped ZnO (AZO) film |
average thickness of Al2O3 and ZnO layers | ≤ 10 nm | Al₂O₃ZnO |
Thickness | 300–800 nm | — |
Voltage | 5–10 V | — |
Voltage | 7–15 V | — |
Thickness | 10–1000 mm | — |
Flow Rate | 1–1000 sccm | — |
Duration | 1–100 seconds | — |
Thickness | 0.5–10 nm | — |
Thickness | 0.5–50 nm | — |
Thickness | 1–10 nm | — |
Thickness | 100–300 nm | — |
Thickness | 0.1–0.2 nm | — |
Thickness | 1.3–2.6 nm | — |
Thickness | 1.9–3.8 nm | — |
Thickness | 4.9–9.8 nm | — |
Thickness | 3.8–7.6 nm | — |
Thickness | 0.2–0.4 nm | — |
Thickness | 5.7–11.4 nm | — |
Thickness | 0.3–0.6 nm | — |
Thickness | 5–10 nm | — |
Thickness | 1.2–2.4 nm | — |
Pressure | 1e-8 torr | — |
Temperature | 80–100 °C | — |
transistor
aluminum precursor gas
zinc precursor gas (organozinc compound)
diethyl zinc
Zn(C₂H₅)2
Al-doped ZnO (AZO) film
Al₂O₃ layer
Al₂O₃
ZnO layer
ZnO
indium tin oxide (ITO)
indium zinc oxide (IZO)
tin oxide
SnO₂
aluminum
Al
silver
Ag
magnesium
Mg
polyethylene terephthalate (PET)
polyimide (PI)
SiO₂
FIG. 4 is a graph showing light transmittance measurement results of a graphene-based laminate prepared according to Comparative Reference Example 1 and a …
FIG. 5 is a graph showing average sheet resistance measurement results of a graphene-based AZO thin-film laminate prepared according to Example 2, the …
FIG. 5 is a graph showing average sheet resistance measurement results of a graphene-based AZO thin-film laminate prepared according to Example 2, the …
FIG. 7 is a schematic view of a back-gated field effect transistor according to an embodiment; and [21]
FIG. 8 is a graph showing a charge neutral point voltage V N P and charge mobility of each of graphene-based AZO thin-film laminates prepared 4 according to …
FIG. 8 is a graph showing a charge neutral point voltage V N P and charge mobility of each of graphene-based AZO thin-film laminates prepared 4 according to …
| 0.7–2.8 atomic % |
Al-doped ZnO (AZO) film |
average thickness of Al2O3 and ZnO layers | ≤ 10 nm | Al₂O₃ZnO |
Thickness | 300–800 nm | — |
Voltage | 5–10 V | — |
Voltage | 7–15 V | — |
Thickness | 10–1000 mm | — |
Flow Rate | 1–1000 sccm | — |
Duration | 1–100 seconds | — |
Thickness | 0.5–10 nm | — |
Thickness | 0.5–50 nm | — |
Thickness | 1–10 nm | — |
Thickness | 100–300 nm | — |
Thickness | 0.1–0.2 nm | — |
Thickness | 1.3–2.6 nm | — |
Thickness | 1.9–3.8 nm | — |
Thickness | 4.9–9.8 nm | — |
Thickness | 3.8–7.6 nm | — |
Thickness | 0.2–0.4 nm | — |
Thickness | 5.7–11.4 nm | — |
Thickness | 0.3–0.6 nm | — |
Thickness | 5–10 nm | — |
Thickness | 1.2–2.4 nm | — |
Pressure | 1e-8 torr | — |
Temperature | 80–100 °C | — |