Patent
US 10,121,932TUNABLE GRAPHENE LIGHT-EMITTING DEVICE
CARLOS M. TORRES JR.
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,121,932Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 for the diagram) into the valence band of the monolayer graphene which is achieved by three different voltage biases in order to show the wavelength …
FIG. 2 shows a diagram illustrating an embodiment of the active region of a device 200 and operational procedure in accordance with the disclosed embodiments. …
FIG. 3C. Device 300 includes a substrate 310, a tunnel barrier 320 (see
FIG. 4 shows a diagram 400 illustrating a common-base configuration that may be used for electrically biasing light-emitting hot-electron transistor devices in …
FIG. 5 A shows a diagram 500 illustrating a voltage biasing schematic to obtain the output characteristics for measuring the resistance of graphene using …
FIG. 6. The red horizontal arrow indicates the input kinetic energy of the injected hot electrons from the underlying degenerately n-doped silicon substrate …
FIG. 7 shows a graph 700 illustrating the output characteristics for chemical vapor deposition (CVD) graphene layer used in devices in accordance with the …
FIG. 8 shows a graph 800 illustrating top-gate modulation transfer characteristics for a graphene-based device in accordance with the disclosed embodiments. …
FIG. 9 shows a graph 900 illustrating tunnel oxide input characteristics for a graphene- based device in accordance with the disclosed embodiments. The device …
FIG. 10. Further, while
FIG. 11 shows a graph illustrating the concept of a voltage-tunable wavelength-agile injection electroluminescence device in accordance with the disclosed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising the steps of: providing a device comprising a substrate having a tunnel barrier disposed on an active region defined on the substrate, a monolayer of graphene disposed on the tunnel barrier, a dielectric material disposed on the monolayer of graphene, and an electrode disposed on the dielectric material; applying a first voltage across the electrode and the monolayer of graphene to adjust a Fermi level within the monolayer of graphene to a Fermi level position within a valence band of the monolayer of graphene based upon a predetermined photonic emission wavelength; and applying a second voltage across the substrate and the monolayer of graphene to inject a current into a conduction band of the monolayer of graphene to cause the monolayer of graphene to emit photons at the predetermined emission wavelength.
The method of claim 1, wherein the predetermined emission wavelength is between about 700 nm and about 1 mm.
The method of claim 1, wherein the predetermined emission wavelength is between about 390 nm and about 700 nm.
The method of claim 1, wherein the predetermined emission wavelength is between about 270 nm and about 390 nm.
The method of claim 1, wherein the substrate comprises one of a metal, a semi-metal, and a semiconductor.
The method of claim 1, wherein the substrate comprises a compound semiconductor selected from one of elemental groups I I-VI, Ill-V and IV.
The method of claim 1, wherein the substrate comprises degenerately-doped n-type silicon.
The method of claim 1, wherein the dielectric material comprises a dielectric having a k-value greater than about 3.8.
The method of claim 1, wherein the dielectric material comprises hexagonal boron nitride.
The method of claim 1, wherein the dielectric material comprises one of an ion-gel, an ionic liquid, and a gel polymer electrolyte.
The method of claim 1, wherein the tunnel barrier comprises one of MgO, SiO 2, monolayer hexagonal boron nitride, multilayer hexagonal boron nitride, and Gd 2 O 3.
The method of claim 1, wherein the current is electrically-induced.
The method of claim 1, wherein the current is photo-induced.
A device comprising: a substrate; a tunnel barrier disposed on an active region defined on the substrate; at least one monolayer of graphene disposed on the tunnel barrier; a dielectric material disposed on the monolayer of graphene, an electrode disposed over a portion of the dielectric material; a first electrical contact disposed over a portion of the monolayer of graphene; a second electrical contact disposed over a portion of the dielectric material; a third electrical contact disposed over a portion of the substrate; a first voltage source connected between the first electrical contact and the second electrical contact, the first voltage source configured to apply a first voltage to adjust a Fermi level within the monolayer of graphene to a Fermi level position within a valence band of the monolayer of graphene based upon a predetermined emission wavelength; and a second voltage source connected between the first electrical contact and the third electrical contact, the second voltage source configured to apply a second voltage to inject a current into a conduction band of the monolayer of graphene to cause the monolayer of graphene to emit photons at the predetermined emission wavelength.
The device of claim 14, wherein the substrate comprises degenerately-doped n-type silicon and the at least one monolayer of graphene is p-doped.
The device of claim 14, wherein the at least one monolayer of graphene comprises more than two separate monolayers of graphene each featuring a band structure with linear energy dispersion relation near the Dirac (K/K') point.
The device of claim 14, wherein the dielectric material comprises one of HfO 2, A₁ 2 0 3, TiO 2, monolayer hexagonal boron nitride, and multilayer hexagonal boron nitride.
The device of claim 14, wherein the dielectric material comprises one of an ion-gel, an ionic liquid, and a gel polymer electrolyte.
The device of claim 14, wherein the tunnel barrier comprises one of MgO, SiO 2, monolayer hexagonal boron nitride, multilayer hexagonal boron nitride, and Gd 2 O 3.
The device of claim 14, wherein the photons are emitted with a broadband hot electron luminescence spectrum peaked at the predetermined photon emission wavelength.
The device of claim 14, wherein the current injected into the conduction band of the monolayer of graphene is modulated at frequencies of up to about 1O THz.
A device comprising: a substrate; a tunnel barrier disposed on an active region defined on the substrate; at least one monolayer of graphene disposed on the tunnel barrier; a dielectric material disposed on the monolayer of graphene, an optically-transparent electrode disposed over a portion of the dielectric material; a first electrical contact disposed over a portion of the monolayer of graphene lying outside of the active region defined on the substrate; a second electrical contact disposed over a portion of the dielectric material and electrically connected to the optically-transparent electrode in the active region defined on the substrate; a third electrical contact disposed over a portion of the substrate; a first voltage source connected between the first electrical contact and the second electrical contact, the first voltage source configured to apply a first voltage to adjust a Fermi level within the within a valence band of the monolayer of graphene wavelength; and a second voltage source connected third electrical contact, the second voltage source current into a conduction band of the monolayer to emit photons at the predetermined emission monolayer of graphene to a Fermi level position based upon a predetermined emission between the first electrical contact and the configured to apply a second voltage to inject a of graphene to cause the monolayer of graphene wavelength.
Layer stacks claimed or described, ordered top of device to substrate.
vertical-tunneling light-emitting hot-electron graphene-base transistor
vertical-tunneling light-emitting hot-electron graphene-base transistor with optically-transparent electrode
Materials described outside the worked examples.
monolayer graphene
dielectric material
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3C. Device 300 includes a substrate 310, a tunnel barrier 320 (see
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
HEL spectrum FWHM approximately 200 nm | 200 nm | monolayer graphene |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,121,932Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 for the diagram) into the valence band of the monolayer graphene which is achieved by three different voltage biases in order to show the wavelength …
FIG. 2 shows a diagram illustrating an embodiment of the active region of a device 200 and operational procedure in accordance with the disclosed embodiments. …
FIG. 3C. Device 300 includes a substrate 310, a tunnel barrier 320 (see
FIG. 4 shows a diagram 400 illustrating a common-base configuration that may be used for electrically biasing light-emitting hot-electron transistor devices in …
FIG. 5 A shows a diagram 500 illustrating a voltage biasing schematic to obtain the output characteristics for measuring the resistance of graphene using …
FIG. 6. The red horizontal arrow indicates the input kinetic energy of the injected hot electrons from the underlying degenerately n-doped silicon substrate …
FIG. 7 shows a graph 700 illustrating the output characteristics for chemical vapor deposition (CVD) graphene layer used in devices in accordance with the …
FIG. 8 shows a graph 800 illustrating top-gate modulation transfer characteristics for a graphene-based device in accordance with the disclosed embodiments. …
FIG. 9 shows a graph 900 illustrating tunnel oxide input characteristics for a graphene- based device in accordance with the disclosed embodiments. The device …
FIG. 10. Further, while
FIG. 11 shows a graph illustrating the concept of a voltage-tunable wavelength-agile injection electroluminescence device in accordance with the disclosed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising the steps of: providing a device comprising a substrate having a tunnel barrier disposed on an active region defined on the substrate, a monolayer of graphene disposed on the tunnel barrier, a dielectric material disposed on the monolayer of graphene, and an electrode disposed on the dielectric material; applying a first voltage across the electrode and the monolayer of graphene to adjust a Fermi level within the monolayer of graphene to a Fermi level position within a valence band of the monolayer of graphene based upon a predetermined photonic emission wavelength; and applying a second voltage across the substrate and the monolayer of graphene to inject a current into a conduction band of the monolayer of graphene to cause the monolayer of graphene to emit photons at the predetermined emission wavelength.
The method of claim 1, wherein the predetermined emission wavelength is between about 700 nm and about 1 mm.
The method of claim 1, wherein the predetermined emission wavelength is between about 390 nm and about 700 nm.
The method of claim 1, wherein the predetermined emission wavelength is between about 270 nm and about 390 nm.
The method of claim 1, wherein the substrate comprises one of a metal, a semi-metal, and a semiconductor.
The method of claim 1, wherein the substrate comprises a compound semiconductor selected from one of elemental groups I I-VI, Ill-V and IV.
The method of claim 1, wherein the substrate comprises degenerately-doped n-type silicon.
The method of claim 1, wherein the dielectric material comprises a dielectric having a k-value greater than about 3.8.
The method of claim 1, wherein the dielectric material comprises hexagonal boron nitride.
The method of claim 1, wherein the dielectric material comprises one of an ion-gel, an ionic liquid, and a gel polymer electrolyte.
The method of claim 1, wherein the tunnel barrier comprises one of MgO, SiO 2, monolayer hexagonal boron nitride, multilayer hexagonal boron nitride, and Gd 2 O 3.
The method of claim 1, wherein the current is electrically-induced.
The method of claim 1, wherein the current is photo-induced.
A device comprising: a substrate; a tunnel barrier disposed on an active region defined on the substrate; at least one monolayer of graphene disposed on the tunnel barrier; a dielectric material disposed on the monolayer of graphene, an electrode disposed over a portion of the dielectric material; a first electrical contact disposed over a portion of the monolayer of graphene; a second electrical contact disposed over a portion of the dielectric material; a third electrical contact disposed over a portion of the substrate; a first voltage source connected between the first electrical contact and the second electrical contact, the first voltage source configured to apply a first voltage to adjust a Fermi level within the monolayer of graphene to a Fermi level position within a valence band of the monolayer of graphene based upon a predetermined emission wavelength; and a second voltage source connected between the first electrical contact and the third electrical contact, the second voltage source configured to apply a second voltage to inject a current into a conduction band of the monolayer of graphene to cause the monolayer of graphene to emit photons at the predetermined emission wavelength.
The device of claim 14, wherein the substrate comprises degenerately-doped n-type silicon and the at least one monolayer of graphene is p-doped.
The device of claim 14, wherein the at least one monolayer of graphene comprises more than two separate monolayers of graphene each featuring a band structure with linear energy dispersion relation near the Dirac (K/K') point.
The device of claim 14, wherein the dielectric material comprises one of HfO 2, A₁ 2 0 3, TiO 2, monolayer hexagonal boron nitride, and multilayer hexagonal boron nitride.
The device of claim 14, wherein the dielectric material comprises one of an ion-gel, an ionic liquid, and a gel polymer electrolyte.
The device of claim 14, wherein the tunnel barrier comprises one of MgO, SiO 2, monolayer hexagonal boron nitride, multilayer hexagonal boron nitride, and Gd 2 O 3.
The device of claim 14, wherein the photons are emitted with a broadband hot electron luminescence spectrum peaked at the predetermined photon emission wavelength.
The device of claim 14, wherein the current injected into the conduction band of the monolayer of graphene is modulated at frequencies of up to about 1O THz.
A device comprising: a substrate; a tunnel barrier disposed on an active region defined on the substrate; at least one monolayer of graphene disposed on the tunnel barrier; a dielectric material disposed on the monolayer of graphene, an optically-transparent electrode disposed over a portion of the dielectric material; a first electrical contact disposed over a portion of the monolayer of graphene lying outside of the active region defined on the substrate; a second electrical contact disposed over a portion of the dielectric material and electrically connected to the optically-transparent electrode in the active region defined on the substrate; a third electrical contact disposed over a portion of the substrate; a first voltage source connected between the first electrical contact and the second electrical contact, the first voltage source configured to apply a first voltage to adjust a Fermi level within the within a valence band of the monolayer of graphene wavelength; and a second voltage source connected third electrical contact, the second voltage source current into a conduction band of the monolayer to emit photons at the predetermined emission monolayer of graphene to a Fermi level position based upon a predetermined emission between the first electrical contact and the configured to apply a second voltage to inject a of graphene to cause the monolayer of graphene wavelength.
Layer stacks claimed or described, ordered top of device to substrate.
vertical-tunneling light-emitting hot-electron graphene-base transistor
vertical-tunneling light-emitting hot-electron graphene-base transistor with optically-transparent electrode
Materials described outside the worked examples.
monolayer graphene
dielectric material
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3C. Device 300 includes a substrate 310, a tunnel barrier 320 (see
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
HEL spectrum FWHM approximately 200 nm | 200 nm | monolayer graphene |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,121,932Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 for the diagram) into the valence band of the monolayer graphene which is achieved by three different voltage biases in order to show the wavelength …
FIG. 2 shows a diagram illustrating an embodiment of the active region of a device 200 and operational procedure in accordance with the disclosed embodiments. …
FIG. 3C. Device 300 includes a substrate 310, a tunnel barrier 320 (see
FIG. 4 shows a diagram 400 illustrating a common-base configuration that may be used for electrically biasing light-emitting hot-electron transistor devices in …
FIG. 5 A shows a diagram 500 illustrating a voltage biasing schematic to obtain the output characteristics for measuring the resistance of graphene using …
FIG. 6. The red horizontal arrow indicates the input kinetic energy of the injected hot electrons from the underlying degenerately n-doped silicon substrate …
FIG. 7 shows a graph 700 illustrating the output characteristics for chemical vapor deposition (CVD) graphene layer used in devices in accordance with the …
FIG. 8 shows a graph 800 illustrating top-gate modulation transfer characteristics for a graphene-based device in accordance with the disclosed embodiments. …
FIG. 9 shows a graph 900 illustrating tunnel oxide input characteristics for a graphene- based device in accordance with the disclosed embodiments. The device …
FIG. 10. Further, while
FIG. 11 shows a graph illustrating the concept of a voltage-tunable wavelength-agile injection electroluminescence device in accordance with the disclosed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising the steps of: providing a device comprising a substrate having a tunnel barrier disposed on an active region defined on the substrate, a monolayer of graphene disposed on the tunnel barrier, a dielectric material disposed on the monolayer of graphene, and an electrode disposed on the dielectric material; applying a first voltage across the electrode and the monolayer of graphene to adjust a Fermi level within the monolayer of graphene to a Fermi level position within a valence band of the monolayer of graphene based upon a predetermined photonic emission wavelength; and applying a second voltage across the substrate and the monolayer of graphene to inject a current into a conduction band of the monolayer of graphene to cause the monolayer of graphene to emit photons at the predetermined emission wavelength.
The method of claim 1, wherein the predetermined emission wavelength is between about 700 nm and about 1 mm.
The method of claim 1, wherein the predetermined emission wavelength is between about 390 nm and about 700 nm.
The method of claim 1, wherein the predetermined emission wavelength is between about 270 nm and about 390 nm.
The method of claim 1, wherein the substrate comprises one of a metal, a semi-metal, and a semiconductor.
The method of claim 1, wherein the substrate comprises a compound semiconductor selected from one of elemental groups I I-VI, Ill-V and IV.
The method of claim 1, wherein the substrate comprises degenerately-doped n-type silicon.
The method of claim 1, wherein the dielectric material comprises a dielectric having a k-value greater than about 3.8.
The method of claim 1, wherein the dielectric material comprises hexagonal boron nitride.
The method of claim 1, wherein the dielectric material comprises one of an ion-gel, an ionic liquid, and a gel polymer electrolyte.
The method of claim 1, wherein the tunnel barrier comprises one of MgO, SiO 2, monolayer hexagonal boron nitride, multilayer hexagonal boron nitride, and Gd 2 O 3.
The method of claim 1, wherein the current is electrically-induced.
The method of claim 1, wherein the current is photo-induced.
A device comprising: a substrate; a tunnel barrier disposed on an active region defined on the substrate; at least one monolayer of graphene disposed on the tunnel barrier; a dielectric material disposed on the monolayer of graphene, an electrode disposed over a portion of the dielectric material; a first electrical contact disposed over a portion of the monolayer of graphene; a second electrical contact disposed over a portion of the dielectric material; a third electrical contact disposed over a portion of the substrate; a first voltage source connected between the first electrical contact and the second electrical contact, the first voltage source configured to apply a first voltage to adjust a Fermi level within the monolayer of graphene to a Fermi level position within a valence band of the monolayer of graphene based upon a predetermined emission wavelength; and a second voltage source connected between the first electrical contact and the third electrical contact, the second voltage source configured to apply a second voltage to inject a current into a conduction band of the monolayer of graphene to cause the monolayer of graphene to emit photons at the predetermined emission wavelength.
The device of claim 14, wherein the substrate comprises degenerately-doped n-type silicon and the at least one monolayer of graphene is p-doped.
The device of claim 14, wherein the at least one monolayer of graphene comprises more than two separate monolayers of graphene each featuring a band structure with linear energy dispersion relation near the Dirac (K/K') point.
The device of claim 14, wherein the dielectric material comprises one of HfO 2, A₁ 2 0 3, TiO 2, monolayer hexagonal boron nitride, and multilayer hexagonal boron nitride.
The device of claim 14, wherein the dielectric material comprises one of an ion-gel, an ionic liquid, and a gel polymer electrolyte.
The device of claim 14, wherein the tunnel barrier comprises one of MgO, SiO 2, monolayer hexagonal boron nitride, multilayer hexagonal boron nitride, and Gd 2 O 3.
The device of claim 14, wherein the photons are emitted with a broadband hot electron luminescence spectrum peaked at the predetermined photon emission wavelength.
The device of claim 14, wherein the current injected into the conduction band of the monolayer of graphene is modulated at frequencies of up to about 1O THz.
A device comprising: a substrate; a tunnel barrier disposed on an active region defined on the substrate; at least one monolayer of graphene disposed on the tunnel barrier; a dielectric material disposed on the monolayer of graphene, an optically-transparent electrode disposed over a portion of the dielectric material; a first electrical contact disposed over a portion of the monolayer of graphene lying outside of the active region defined on the substrate; a second electrical contact disposed over a portion of the dielectric material and electrically connected to the optically-transparent electrode in the active region defined on the substrate; a third electrical contact disposed over a portion of the substrate; a first voltage source connected between the first electrical contact and the second electrical contact, the first voltage source configured to apply a first voltage to adjust a Fermi level within the within a valence band of the monolayer of graphene wavelength; and a second voltage source connected third electrical contact, the second voltage source current into a conduction band of the monolayer to emit photons at the predetermined emission monolayer of graphene to a Fermi level position based upon a predetermined emission between the first electrical contact and the configured to apply a second voltage to inject a of graphene to cause the monolayer of graphene wavelength.
Layer stacks claimed or described, ordered top of device to substrate.
vertical-tunneling light-emitting hot-electron graphene-base transistor
vertical-tunneling light-emitting hot-electron graphene-base transistor with optically-transparent electrode
Materials described outside the worked examples.
monolayer graphene
dielectric material
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3C. Device 300 includes a substrate 310, a tunnel barrier 320 (see
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
HEL spectrum FWHM approximately 200 nm | 200 nm | monolayer graphene |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,121,932Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 for the diagram) into the valence band of the monolayer graphene which is achieved by three different voltage biases in order to show the wavelength …
FIG. 2 shows a diagram illustrating an embodiment of the active region of a device 200 and operational procedure in accordance with the disclosed embodiments. …
FIG. 3C. Device 300 includes a substrate 310, a tunnel barrier 320 (see
FIG. 4 shows a diagram 400 illustrating a common-base configuration that may be used for electrically biasing light-emitting hot-electron transistor devices in …
FIG. 5 A shows a diagram 500 illustrating a voltage biasing schematic to obtain the output characteristics for measuring the resistance of graphene using …
FIG. 6. The red horizontal arrow indicates the input kinetic energy of the injected hot electrons from the underlying degenerately n-doped silicon substrate …
FIG. 7 shows a graph 700 illustrating the output characteristics for chemical vapor deposition (CVD) graphene layer used in devices in accordance with the …
FIG. 8 shows a graph 800 illustrating top-gate modulation transfer characteristics for a graphene-based device in accordance with the disclosed embodiments. …
FIG. 9 shows a graph 900 illustrating tunnel oxide input characteristics for a graphene- based device in accordance with the disclosed embodiments. The device …
FIG. 10. Further, while
FIG. 11 shows a graph illustrating the concept of a voltage-tunable wavelength-agile injection electroluminescence device in accordance with the disclosed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising the steps of: providing a device comprising a substrate having a tunnel barrier disposed on an active region defined on the substrate, a monolayer of graphene disposed on the tunnel barrier, a dielectric material disposed on the monolayer of graphene, and an electrode disposed on the dielectric material; applying a first voltage across the electrode and the monolayer of graphene to adjust a Fermi level within the monolayer of graphene to a Fermi level position within a valence band of the monolayer of graphene based upon a predetermined photonic emission wavelength; and applying a second voltage across the substrate and the monolayer of graphene to inject a current into a conduction band of the monolayer of graphene to cause the monolayer of graphene to emit photons at the predetermined emission wavelength.
The method of claim 1, wherein the predetermined emission wavelength is between about 700 nm and about 1 mm.
The method of claim 1, wherein the predetermined emission wavelength is between about 390 nm and about 700 nm.
The method of claim 1, wherein the predetermined emission wavelength is between about 270 nm and about 390 nm.
The method of claim 1, wherein the substrate comprises one of a metal, a semi-metal, and a semiconductor.
The method of claim 1, wherein the substrate comprises a compound semiconductor selected from one of elemental groups I I-VI, Ill-V and IV.
The method of claim 1, wherein the substrate comprises degenerately-doped n-type silicon.
The method of claim 1, wherein the dielectric material comprises a dielectric having a k-value greater than about 3.8.
The method of claim 1, wherein the dielectric material comprises hexagonal boron nitride.
The method of claim 1, wherein the dielectric material comprises one of an ion-gel, an ionic liquid, and a gel polymer electrolyte.
The method of claim 1, wherein the tunnel barrier comprises one of MgO, SiO 2, monolayer hexagonal boron nitride, multilayer hexagonal boron nitride, and Gd 2 O 3.
The method of claim 1, wherein the current is electrically-induced.
The method of claim 1, wherein the current is photo-induced.
A device comprising: a substrate; a tunnel barrier disposed on an active region defined on the substrate; at least one monolayer of graphene disposed on the tunnel barrier; a dielectric material disposed on the monolayer of graphene, an electrode disposed over a portion of the dielectric material; a first electrical contact disposed over a portion of the monolayer of graphene; a second electrical contact disposed over a portion of the dielectric material; a third electrical contact disposed over a portion of the substrate; a first voltage source connected between the first electrical contact and the second electrical contact, the first voltage source configured to apply a first voltage to adjust a Fermi level within the monolayer of graphene to a Fermi level position within a valence band of the monolayer of graphene based upon a predetermined emission wavelength; and a second voltage source connected between the first electrical contact and the third electrical contact, the second voltage source configured to apply a second voltage to inject a current into a conduction band of the monolayer of graphene to cause the monolayer of graphene to emit photons at the predetermined emission wavelength.
The device of claim 14, wherein the substrate comprises degenerately-doped n-type silicon and the at least one monolayer of graphene is p-doped.
The device of claim 14, wherein the at least one monolayer of graphene comprises more than two separate monolayers of graphene each featuring a band structure with linear energy dispersion relation near the Dirac (K/K') point.
The device of claim 14, wherein the dielectric material comprises one of HfO 2, A₁ 2 0 3, TiO 2, monolayer hexagonal boron nitride, and multilayer hexagonal boron nitride.
The device of claim 14, wherein the dielectric material comprises one of an ion-gel, an ionic liquid, and a gel polymer electrolyte.
The device of claim 14, wherein the tunnel barrier comprises one of MgO, SiO 2, monolayer hexagonal boron nitride, multilayer hexagonal boron nitride, and Gd 2 O 3.
The device of claim 14, wherein the photons are emitted with a broadband hot electron luminescence spectrum peaked at the predetermined photon emission wavelength.
The device of claim 14, wherein the current injected into the conduction band of the monolayer of graphene is modulated at frequencies of up to about 1O THz.
A device comprising: a substrate; a tunnel barrier disposed on an active region defined on the substrate; at least one monolayer of graphene disposed on the tunnel barrier; a dielectric material disposed on the monolayer of graphene, an optically-transparent electrode disposed over a portion of the dielectric material; a first electrical contact disposed over a portion of the monolayer of graphene lying outside of the active region defined on the substrate; a second electrical contact disposed over a portion of the dielectric material and electrically connected to the optically-transparent electrode in the active region defined on the substrate; a third electrical contact disposed over a portion of the substrate; a first voltage source connected between the first electrical contact and the second electrical contact, the first voltage source configured to apply a first voltage to adjust a Fermi level within the within a valence band of the monolayer of graphene wavelength; and a second voltage source connected third electrical contact, the second voltage source current into a conduction band of the monolayer to emit photons at the predetermined emission monolayer of graphene to a Fermi level position based upon a predetermined emission between the first electrical contact and the configured to apply a second voltage to inject a of graphene to cause the monolayer of graphene wavelength.
Layer stacks claimed or described, ordered top of device to substrate.
vertical-tunneling light-emitting hot-electron graphene-base transistor
vertical-tunneling light-emitting hot-electron graphene-base transistor with optically-transparent electrode
Materials described outside the worked examples.
monolayer graphene
dielectric material
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3C. Device 300 includes a substrate 310, a tunnel barrier 320 (see
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
HEL spectrum FWHM approximately 200 nm | 200 nm | monolayer graphene |
Related documents with shared materials, methods, properties, or citations.
dual-gated graphene transistor (described embodiment)
tunnel barrier
substrate (metal, semi-metal, or semiconductor)
degenerately-doped n-type silicon
hexagonal boron nitride
h-BN
ion-gel/ionic liquid/gel polymer electrolyte
MgO
SiO₂
Gd₂O₃
p-doped graphene
transition metal dichalcogenides
HfO₂
Al₂O₃
TiO₂
CVD graphene
FIG. 4 shows a diagram 400 illustrating a common-base configuration that may be used for electrically biasing light-emitting hot-electron transistor devices in …
FIG. 5 A shows a diagram 500 illustrating a voltage biasing schematic to obtain the output characteristics for measuring the resistance of graphene using …
FIG. 7 shows a graph 700 illustrating the output characteristics for chemical vapor deposition (CVD) graphene layer used in devices in accordance with the …
FIG. 7 shows a graph 700 illustrating the output characteristics for chemical vapor deposition (CVD) graphene layer used in devices in accordance with the …
FIG. 8 shows a graph 800 illustrating top-gate modulation transfer characteristics for a graphene-based device in accordance with the disclosed embodiments. …
FIG. 9 shows a graph 900 illustrating tunnel oxide input characteristics for a graphene- based device in accordance with the disclosed embodiments. The device …
FIG. 11 shows a graph illustrating the concept of a voltage-tunable wavelength-agile injection electroluminescence device in accordance with the disclosed …
| 700–1000000 nm |
| — |
Thickness | 390–700 nm | — |
Thickness | 270–390 nm | — |
Thickness | 0–4 cm | — |
dual-gated graphene transistor (described embodiment)
tunnel barrier
substrate (metal, semi-metal, or semiconductor)
degenerately-doped n-type silicon
hexagonal boron nitride
h-BN
ion-gel/ionic liquid/gel polymer electrolyte
MgO
SiO₂
Gd₂O₃
p-doped graphene
transition metal dichalcogenides
HfO₂
Al₂O₃
TiO₂
CVD graphene
FIG. 4 shows a diagram 400 illustrating a common-base configuration that may be used for electrically biasing light-emitting hot-electron transistor devices in …
FIG. 5 A shows a diagram 500 illustrating a voltage biasing schematic to obtain the output characteristics for measuring the resistance of graphene using …
FIG. 7 shows a graph 700 illustrating the output characteristics for chemical vapor deposition (CVD) graphene layer used in devices in accordance with the …
FIG. 7 shows a graph 700 illustrating the output characteristics for chemical vapor deposition (CVD) graphene layer used in devices in accordance with the …
FIG. 8 shows a graph 800 illustrating top-gate modulation transfer characteristics for a graphene-based device in accordance with the disclosed embodiments. …
FIG. 9 shows a graph 900 illustrating tunnel oxide input characteristics for a graphene- based device in accordance with the disclosed embodiments. The device …
FIG. 11 shows a graph illustrating the concept of a voltage-tunable wavelength-agile injection electroluminescence device in accordance with the disclosed …
| 700–1000000 nm |
| — |
Thickness | 390–700 nm | — |
Thickness | 270–390 nm | — |
Thickness | 0–4 cm | — |
dual-gated graphene transistor (described embodiment)
tunnel barrier
substrate (metal, semi-metal, or semiconductor)
degenerately-doped n-type silicon
hexagonal boron nitride
h-BN
ion-gel/ionic liquid/gel polymer electrolyte
MgO
SiO₂
Gd₂O₃
p-doped graphene
transition metal dichalcogenides
HfO₂
Al₂O₃
TiO₂
CVD graphene
FIG. 4 shows a diagram 400 illustrating a common-base configuration that may be used for electrically biasing light-emitting hot-electron transistor devices in …
FIG. 5 A shows a diagram 500 illustrating a voltage biasing schematic to obtain the output characteristics for measuring the resistance of graphene using …
FIG. 7 shows a graph 700 illustrating the output characteristics for chemical vapor deposition (CVD) graphene layer used in devices in accordance with the …
FIG. 7 shows a graph 700 illustrating the output characteristics for chemical vapor deposition (CVD) graphene layer used in devices in accordance with the …
FIG. 8 shows a graph 800 illustrating top-gate modulation transfer characteristics for a graphene-based device in accordance with the disclosed embodiments. …
FIG. 9 shows a graph 900 illustrating tunnel oxide input characteristics for a graphene- based device in accordance with the disclosed embodiments. The device …
FIG. 11 shows a graph illustrating the concept of a voltage-tunable wavelength-agile injection electroluminescence device in accordance with the disclosed …
| 700–1000000 nm |
| — |
Thickness | 390–700 nm | — |
Thickness | 270–390 nm | — |
Thickness | 0–4 cm | — |
dual-gated graphene transistor (described embodiment)
tunnel barrier
substrate (metal, semi-metal, or semiconductor)
degenerately-doped n-type silicon
hexagonal boron nitride
h-BN
ion-gel/ionic liquid/gel polymer electrolyte
MgO
SiO₂
Gd₂O₃
p-doped graphene
transition metal dichalcogenides
HfO₂
Al₂O₃
TiO₂
CVD graphene
FIG. 4 shows a diagram 400 illustrating a common-base configuration that may be used for electrically biasing light-emitting hot-electron transistor devices in …
FIG. 5 A shows a diagram 500 illustrating a voltage biasing schematic to obtain the output characteristics for measuring the resistance of graphene using …
FIG. 7 shows a graph 700 illustrating the output characteristics for chemical vapor deposition (CVD) graphene layer used in devices in accordance with the …
FIG. 7 shows a graph 700 illustrating the output characteristics for chemical vapor deposition (CVD) graphene layer used in devices in accordance with the …
FIG. 8 shows a graph 800 illustrating top-gate modulation transfer characteristics for a graphene-based device in accordance with the disclosed embodiments. …
FIG. 9 shows a graph 900 illustrating tunnel oxide input characteristics for a graphene- based device in accordance with the disclosed embodiments. The device …
FIG. 11 shows a graph illustrating the concept of a voltage-tunable wavelength-agile injection electroluminescence device in accordance with the disclosed …
| 700–1000000 nm |
| — |
Thickness | 390–700 nm | — |
Thickness | 270–390 nm | — |
Thickness | 0–4 cm | — |