Patent
US 9,576,916HIGH FREQUENCY CIRCUIT COMPRISING GRAPHENE AND METHOD OF OPERATING THE SAME
Hyeon-jin SHIN
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,576,916Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a schematic view showing a structure of an embodiment of a radio frequency ("RF") interconnection unit having a ground-signal-ground ("GSG") type …
FIG. 2 is a graph illustrating S-parameters (decibel: dB) versus frequency (gigahertz: GHz) of embodiments of interconnection units prepared according to …
FIG. 3 where the interconnection unit prepared according to Example 2 or 3 has a relatively high transmission coefficient. [0057] In an embodiment, electrical …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A high frequency circuit comprising: a first electronic device; a second electronic device; and a graphene interconnection unit which connects the first and second electronic devices; and an insulating layer having at least one of a trench and a via disposed under the graphene interconnection unit, wherein the trench has an opening portion, the graphene interconnection unit covers at least part of the opening portion, the graphene interconnection unit includes a consists of at least one graphene sheet monolayer, and the graphene monolayer has having a planar structure in which carbon atoms are aligned in a hexagonal ring to form a honeycomb structure, the graphene sheet having a width and a length corresponding to a size of the graphene interconnection unit.
The high frequency circuit of claim 1, wherein the first electronic device sends an electrical signal to the second electronic device via the graphene interconnection unit in a high frequency field.
The high frequency circuit of claim 1, wherein the trench has a depth in the range of about 1 nanometer to about 10,000 nanometers. Page 2 of 11 YPL₁ 0 32US SI-3 8931-US RE₂₀₁₁₀₂₀₀₄US₀ App l. No. 13/543,050 Response dated: Reply to Non-final Office Action dated:
The high frequency circuit of claim 1, wherein the first electronic device sends an electrical signal via the graphene interconnection unit at a frequency of about 0.8 g i gahertz or higher.
The high frequency circuit of claim 1, wherein the first electronic device sends an electrical signal via the graphene interconnection unit at a frequency in a range of about 2 g i gahertz to about 300 terahertz.
The high frequency circuit of claim 1, wherein each of the first and second electronic devices comprise a transistor.
The high frequency circuit of claim 1, wherein the graphene interconnection unit comprises a plurality of graphene units aligned substantially parallel to each other.
The high frequency circuit of claim 1, wherein the graphene interconnection unit conveys a current at a frequency in a range of about 1 megahertz to about 800 mega hertz.
The high frequency circuit of claim 1, wherein the graphene interconnection unit conveys a current at a frequency in a range of about 2 g i gahertz to about 300 g i gahertz.
The high frequency circuit of claim 1, wherein the high frequency circuit is a radio frequency circuit which operates at a high frequency of about 0.8 g i gahertz or greater.
The high frequency circuit of claim 1, wherein the graphene interconnection unit has 1 graphene monolayer to 300 graphene monolayers.
The high frequency circuit of claim 1, wherein the graphene monolayer has a width in a range
canceled
A method of operating a high frequency circuit, the method comprising: Page 3 of 11 YPL₁ 0 32US SI-3 8931-US RE₂₀₁₁₀₂₀₀₄US₀ App l. No. 13/543,050 Response dated: Reply to Non-final Office Action dated: applying a power voltage to a high frequency circuit comprising a graphene interconnection unit; and conveying current via the graphene interconnection unit in a high frequency field, wherein at least one of a trench and a via is defined under the graphene interconnection unit. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
high frequency circuit with graphene interconnection
Materials described outside the worked examples.
graphene
C
SiO₂
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph illustrating S-parameters (decibel: dB) versus frequency (gigahertz: GHz) of embodiments of interconnection units prepared according to …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 400–500 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,576,916Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a schematic view showing a structure of an embodiment of a radio frequency ("RF") interconnection unit having a ground-signal-ground ("GSG") type …
FIG. 2 is a graph illustrating S-parameters (decibel: dB) versus frequency (gigahertz: GHz) of embodiments of interconnection units prepared according to …
FIG. 3 where the interconnection unit prepared according to Example 2 or 3 has a relatively high transmission coefficient. [0057] In an embodiment, electrical …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A high frequency circuit comprising: a first electronic device; a second electronic device; and a graphene interconnection unit which connects the first and second electronic devices; and an insulating layer having at least one of a trench and a via disposed under the graphene interconnection unit, wherein the trench has an opening portion, the graphene interconnection unit covers at least part of the opening portion, the graphene interconnection unit includes a consists of at least one graphene sheet monolayer, and the graphene monolayer has having a planar structure in which carbon atoms are aligned in a hexagonal ring to form a honeycomb structure, the graphene sheet having a width and a length corresponding to a size of the graphene interconnection unit.
The high frequency circuit of claim 1, wherein the first electronic device sends an electrical signal to the second electronic device via the graphene interconnection unit in a high frequency field.
The high frequency circuit of claim 1, wherein the trench has a depth in the range of about 1 nanometer to about 10,000 nanometers. Page 2 of 11 YPL₁ 0 32US SI-3 8931-US RE₂₀₁₁₀₂₀₀₄US₀ App l. No. 13/543,050 Response dated: Reply to Non-final Office Action dated:
The high frequency circuit of claim 1, wherein the first electronic device sends an electrical signal via the graphene interconnection unit at a frequency of about 0.8 g i gahertz or higher.
The high frequency circuit of claim 1, wherein the first electronic device sends an electrical signal via the graphene interconnection unit at a frequency in a range of about 2 g i gahertz to about 300 terahertz.
The high frequency circuit of claim 1, wherein each of the first and second electronic devices comprise a transistor.
The high frequency circuit of claim 1, wherein the graphene interconnection unit comprises a plurality of graphene units aligned substantially parallel to each other.
The high frequency circuit of claim 1, wherein the graphene interconnection unit conveys a current at a frequency in a range of about 1 megahertz to about 800 mega hertz.
The high frequency circuit of claim 1, wherein the graphene interconnection unit conveys a current at a frequency in a range of about 2 g i gahertz to about 300 g i gahertz.
The high frequency circuit of claim 1, wherein the high frequency circuit is a radio frequency circuit which operates at a high frequency of about 0.8 g i gahertz or greater.
The high frequency circuit of claim 1, wherein the graphene interconnection unit has 1 graphene monolayer to 300 graphene monolayers.
The high frequency circuit of claim 1, wherein the graphene monolayer has a width in a range
canceled
A method of operating a high frequency circuit, the method comprising: Page 3 of 11 YPL₁ 0 32US SI-3 8931-US RE₂₀₁₁₀₂₀₀₄US₀ App l. No. 13/543,050 Response dated: Reply to Non-final Office Action dated: applying a power voltage to a high frequency circuit comprising a graphene interconnection unit; and conveying current via the graphene interconnection unit in a high frequency field, wherein at least one of a trench and a via is defined under the graphene interconnection unit. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
high frequency circuit with graphene interconnection
Materials described outside the worked examples.
graphene
C
SiO₂
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph illustrating S-parameters (decibel: dB) versus frequency (gigahertz: GHz) of embodiments of interconnection units prepared according to …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 400–500 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,576,916Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a schematic view showing a structure of an embodiment of a radio frequency ("RF") interconnection unit having a ground-signal-ground ("GSG") type …
FIG. 2 is a graph illustrating S-parameters (decibel: dB) versus frequency (gigahertz: GHz) of embodiments of interconnection units prepared according to …
FIG. 3 where the interconnection unit prepared according to Example 2 or 3 has a relatively high transmission coefficient. [0057] In an embodiment, electrical …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A high frequency circuit comprising: a first electronic device; a second electronic device; and a graphene interconnection unit which connects the first and second electronic devices; and an insulating layer having at least one of a trench and a via disposed under the graphene interconnection unit, wherein the trench has an opening portion, the graphene interconnection unit covers at least part of the opening portion, the graphene interconnection unit includes a consists of at least one graphene sheet monolayer, and the graphene monolayer has having a planar structure in which carbon atoms are aligned in a hexagonal ring to form a honeycomb structure, the graphene sheet having a width and a length corresponding to a size of the graphene interconnection unit.
The high frequency circuit of claim 1, wherein the first electronic device sends an electrical signal to the second electronic device via the graphene interconnection unit in a high frequency field.
The high frequency circuit of claim 1, wherein the trench has a depth in the range of about 1 nanometer to about 10,000 nanometers. Page 2 of 11 YPL₁ 0 32US SI-3 8931-US RE₂₀₁₁₀₂₀₀₄US₀ App l. No. 13/543,050 Response dated: Reply to Non-final Office Action dated:
The high frequency circuit of claim 1, wherein the first electronic device sends an electrical signal via the graphene interconnection unit at a frequency of about 0.8 g i gahertz or higher.
The high frequency circuit of claim 1, wherein the first electronic device sends an electrical signal via the graphene interconnection unit at a frequency in a range of about 2 g i gahertz to about 300 terahertz.
The high frequency circuit of claim 1, wherein each of the first and second electronic devices comprise a transistor.
The high frequency circuit of claim 1, wherein the graphene interconnection unit comprises a plurality of graphene units aligned substantially parallel to each other.
The high frequency circuit of claim 1, wherein the graphene interconnection unit conveys a current at a frequency in a range of about 1 megahertz to about 800 mega hertz.
The high frequency circuit of claim 1, wherein the graphene interconnection unit conveys a current at a frequency in a range of about 2 g i gahertz to about 300 g i gahertz.
The high frequency circuit of claim 1, wherein the high frequency circuit is a radio frequency circuit which operates at a high frequency of about 0.8 g i gahertz or greater.
The high frequency circuit of claim 1, wherein the graphene interconnection unit has 1 graphene monolayer to 300 graphene monolayers.
The high frequency circuit of claim 1, wherein the graphene monolayer has a width in a range
canceled
A method of operating a high frequency circuit, the method comprising: Page 3 of 11 YPL₁ 0 32US SI-3 8931-US RE₂₀₁₁₀₂₀₀₄US₀ App l. No. 13/543,050 Response dated: Reply to Non-final Office Action dated: applying a power voltage to a high frequency circuit comprising a graphene interconnection unit; and conveying current via the graphene interconnection unit in a high frequency field, wherein at least one of a trench and a via is defined under the graphene interconnection unit. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
high frequency circuit with graphene interconnection
Materials described outside the worked examples.
graphene
C
SiO₂
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph illustrating S-parameters (decibel: dB) versus frequency (gigahertz: GHz) of embodiments of interconnection units prepared according to …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 400–500 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,576,916Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a schematic view showing a structure of an embodiment of a radio frequency ("RF") interconnection unit having a ground-signal-ground ("GSG") type …
FIG. 2 is a graph illustrating S-parameters (decibel: dB) versus frequency (gigahertz: GHz) of embodiments of interconnection units prepared according to …
FIG. 3 where the interconnection unit prepared according to Example 2 or 3 has a relatively high transmission coefficient. [0057] In an embodiment, electrical …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A high frequency circuit comprising: a first electronic device; a second electronic device; and a graphene interconnection unit which connects the first and second electronic devices; and an insulating layer having at least one of a trench and a via disposed under the graphene interconnection unit, wherein the trench has an opening portion, the graphene interconnection unit covers at least part of the opening portion, the graphene interconnection unit includes a consists of at least one graphene sheet monolayer, and the graphene monolayer has having a planar structure in which carbon atoms are aligned in a hexagonal ring to form a honeycomb structure, the graphene sheet having a width and a length corresponding to a size of the graphene interconnection unit.
The high frequency circuit of claim 1, wherein the first electronic device sends an electrical signal to the second electronic device via the graphene interconnection unit in a high frequency field.
The high frequency circuit of claim 1, wherein the trench has a depth in the range of about 1 nanometer to about 10,000 nanometers. Page 2 of 11 YPL₁ 0 32US SI-3 8931-US RE₂₀₁₁₀₂₀₀₄US₀ App l. No. 13/543,050 Response dated: Reply to Non-final Office Action dated:
The high frequency circuit of claim 1, wherein the first electronic device sends an electrical signal via the graphene interconnection unit at a frequency of about 0.8 g i gahertz or higher.
The high frequency circuit of claim 1, wherein the first electronic device sends an electrical signal via the graphene interconnection unit at a frequency in a range of about 2 g i gahertz to about 300 terahertz.
The high frequency circuit of claim 1, wherein each of the first and second electronic devices comprise a transistor.
The high frequency circuit of claim 1, wherein the graphene interconnection unit comprises a plurality of graphene units aligned substantially parallel to each other.
The high frequency circuit of claim 1, wherein the graphene interconnection unit conveys a current at a frequency in a range of about 1 megahertz to about 800 mega hertz.
The high frequency circuit of claim 1, wherein the graphene interconnection unit conveys a current at a frequency in a range of about 2 g i gahertz to about 300 g i gahertz.
The high frequency circuit of claim 1, wherein the high frequency circuit is a radio frequency circuit which operates at a high frequency of about 0.8 g i gahertz or greater.
The high frequency circuit of claim 1, wherein the graphene interconnection unit has 1 graphene monolayer to 300 graphene monolayers.
The high frequency circuit of claim 1, wherein the graphene monolayer has a width in a range
canceled
A method of operating a high frequency circuit, the method comprising: Page 3 of 11 YPL₁ 0 32US SI-3 8931-US RE₂₀₁₁₀₂₀₀₄US₀ App l. No. 13/543,050 Response dated: Reply to Non-final Office Action dated: applying a power voltage to a high frequency circuit comprising a graphene interconnection unit; and conveying current via the graphene interconnection unit in a high frequency field, wherein at least one of a trench and a via is defined under the graphene interconnection unit. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
high frequency circuit with graphene interconnection
Materials described outside the worked examples.
graphene
C
SiO₂
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph illustrating S-parameters (decibel: dB) versus frequency (gigahertz: GHz) of embodiments of interconnection units prepared according to …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 400–500 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
HfO₂
TiO₂
ZrO₂
SiN
BN
FIG. 3 where the interconnection unit prepared according to Example 2 or 3 has a relatively high transmission coefficient. [0057] In an embodiment, electrical …
FIG. 3 where the interconnection unit prepared according to Example 2 or 3 has a relatively high transmission coefficient. [0057] In an embodiment, electrical …
| 1–10000 nm |
| — |
HfO₂
TiO₂
ZrO₂
SiN
BN
FIG. 3 where the interconnection unit prepared according to Example 2 or 3 has a relatively high transmission coefficient. [0057] In an embodiment, electrical …
FIG. 3 where the interconnection unit prepared according to Example 2 or 3 has a relatively high transmission coefficient. [0057] In an embodiment, electrical …
| 1–10000 nm |
| — |
HfO₂
TiO₂
ZrO₂
SiN
BN
FIG. 3 where the interconnection unit prepared according to Example 2 or 3 has a relatively high transmission coefficient. [0057] In an embodiment, electrical …
FIG. 3 where the interconnection unit prepared according to Example 2 or 3 has a relatively high transmission coefficient. [0057] In an embodiment, electrical …
| 1–10000 nm |
| — |
HfO₂
TiO₂
ZrO₂
SiN
BN
FIG. 3 where the interconnection unit prepared according to Example 2 or 3 has a relatively high transmission coefficient. [0057] In an embodiment, electrical …
FIG. 3 where the interconnection unit prepared according to Example 2 or 3 has a relatively high transmission coefficient. [0057] In an embodiment, electrical …
| 1–10000 nm |
| — |