Patent
US 8,741,700NON-VOLATILE GRAPHENE NANOMECHANICAL SWITCH
Dechao Guo
US
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Atlas literature
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US 8,741,700Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a non-volatile graphene switch in an "open " state in accordance with the present principles; [0010]
FIG. 2 is a cross-sectional view of a non-volatile graphene switch in a "closed" state in accordance with the present principles; [0011]
FIG. 3 is a graph illustrating threshold voltages of a graphene switch according to the present principles; [0012]
FIG. 4 is a graph illustrating threshold voltages of a non-volatile graphene switch according to the present principles; [0013]
FIG. 5 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; [0014]
FIG. 6 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; YO R₉₂₀ 11 0435US₂ (163-569 CON) Page 3 of 17 …
FIG. 7 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; [0016]
FIG. 8 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; [0017]
FIG. 9 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; [0018] FIG 10 is a diagram of a step of forming a …
FIG. 10, additional dielectric material is deposited onto substrate 502 to form extended substrate 1002. It is specifically contemplated that the new material …
FIG. 11 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; [0020]
FIG. 12 is a block/flow diagram of fabricating a non-volatile graphene switch according to the present principles; and [0021]
FIG. 13 is a diagram of an alternative embodiment of a non- volatile graphene switch according to the present principles.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a non-volatile switch, comprising: depositing gate material in a recess of a substrate; depositing drain metal in a recess of the gate material; planarizing the gate material, drain metal, and substrate; forming s idewal l s by depositing material on the substrate around the gate material; forming a flexible conductive element between the sidewal ls to establish a gap between the flexible conductive element and the gate material, wherein the gap separating the flexible conductive element and the gate material is sized to create a negative threshold voltage at the gate material for opening a circuit; and forming a source terminal in electrical contact with the flexible conductive element.
The method of claim 1, wherein the flexible conductive element is formed from graphene.
The method of claim 1, further comprising forming a top gate that applies a restorative force to the flexible conductive element to open the circuit when a top threshold voltage is applied.
The method of claim 1, wherein the source terminal is formed over the flexible conductive element. YO R₉₂₀₁₁₀₄₃₅US₂ (163-569 CON) Page 16 of 17
Layer stacks claimed or described, ordered top of device to substrate.
non-volatile graphene nanomechanical switch
Materials described outside the worked examples.
gate material
drain metal
flexible conductive element
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph illustrating threshold voltages of a graphene switch according to the present principles; [0012]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
gate threshold voltage (closing) | 2.5 V | C |
gate material width | 10 µm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,741,700Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a non-volatile graphene switch in an "open " state in accordance with the present principles; [0010]
FIG. 2 is a cross-sectional view of a non-volatile graphene switch in a "closed" state in accordance with the present principles; [0011]
FIG. 3 is a graph illustrating threshold voltages of a graphene switch according to the present principles; [0012]
FIG. 4 is a graph illustrating threshold voltages of a non-volatile graphene switch according to the present principles; [0013]
FIG. 5 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; [0014]
FIG. 6 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; YO R₉₂₀ 11 0435US₂ (163-569 CON) Page 3 of 17 …
FIG. 7 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; [0016]
FIG. 8 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; [0017]
FIG. 9 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; [0018] FIG 10 is a diagram of a step of forming a …
FIG. 10, additional dielectric material is deposited onto substrate 502 to form extended substrate 1002. It is specifically contemplated that the new material …
FIG. 11 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; [0020]
FIG. 12 is a block/flow diagram of fabricating a non-volatile graphene switch according to the present principles; and [0021]
FIG. 13 is a diagram of an alternative embodiment of a non- volatile graphene switch according to the present principles.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a non-volatile switch, comprising: depositing gate material in a recess of a substrate; depositing drain metal in a recess of the gate material; planarizing the gate material, drain metal, and substrate; forming s idewal l s by depositing material on the substrate around the gate material; forming a flexible conductive element between the sidewal ls to establish a gap between the flexible conductive element and the gate material, wherein the gap separating the flexible conductive element and the gate material is sized to create a negative threshold voltage at the gate material for opening a circuit; and forming a source terminal in electrical contact with the flexible conductive element.
The method of claim 1, wherein the flexible conductive element is formed from graphene.
The method of claim 1, further comprising forming a top gate that applies a restorative force to the flexible conductive element to open the circuit when a top threshold voltage is applied.
The method of claim 1, wherein the source terminal is formed over the flexible conductive element. YO R₉₂₀₁₁₀₄₃₅US₂ (163-569 CON) Page 16 of 17
Layer stacks claimed or described, ordered top of device to substrate.
non-volatile graphene nanomechanical switch
Materials described outside the worked examples.
gate material
drain metal
flexible conductive element
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph illustrating threshold voltages of a graphene switch according to the present principles; [0012]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
gate threshold voltage (closing) | 2.5 V | C |
gate material width | 10 µm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,741,700Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a non-volatile graphene switch in an "open " state in accordance with the present principles; [0010]
FIG. 2 is a cross-sectional view of a non-volatile graphene switch in a "closed" state in accordance with the present principles; [0011]
FIG. 3 is a graph illustrating threshold voltages of a graphene switch according to the present principles; [0012]
FIG. 4 is a graph illustrating threshold voltages of a non-volatile graphene switch according to the present principles; [0013]
FIG. 5 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; [0014]
FIG. 6 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; YO R₉₂₀ 11 0435US₂ (163-569 CON) Page 3 of 17 …
FIG. 7 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; [0016]
FIG. 8 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; [0017]
FIG. 9 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; [0018] FIG 10 is a diagram of a step of forming a …
FIG. 10, additional dielectric material is deposited onto substrate 502 to form extended substrate 1002. It is specifically contemplated that the new material …
FIG. 11 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; [0020]
FIG. 12 is a block/flow diagram of fabricating a non-volatile graphene switch according to the present principles; and [0021]
FIG. 13 is a diagram of an alternative embodiment of a non- volatile graphene switch according to the present principles.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a non-volatile switch, comprising: depositing gate material in a recess of a substrate; depositing drain metal in a recess of the gate material; planarizing the gate material, drain metal, and substrate; forming s idewal l s by depositing material on the substrate around the gate material; forming a flexible conductive element between the sidewal ls to establish a gap between the flexible conductive element and the gate material, wherein the gap separating the flexible conductive element and the gate material is sized to create a negative threshold voltage at the gate material for opening a circuit; and forming a source terminal in electrical contact with the flexible conductive element.
The method of claim 1, wherein the flexible conductive element is formed from graphene.
The method of claim 1, further comprising forming a top gate that applies a restorative force to the flexible conductive element to open the circuit when a top threshold voltage is applied.
The method of claim 1, wherein the source terminal is formed over the flexible conductive element. YO R₉₂₀₁₁₀₄₃₅US₂ (163-569 CON) Page 16 of 17
Layer stacks claimed or described, ordered top of device to substrate.
non-volatile graphene nanomechanical switch
Materials described outside the worked examples.
gate material
drain metal
flexible conductive element
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph illustrating threshold voltages of a graphene switch according to the present principles; [0012]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
gate threshold voltage (closing) | 2.5 V | C |
gate material width | 10 µm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,741,700Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a non-volatile graphene switch in an "open " state in accordance with the present principles; [0010]
FIG. 2 is a cross-sectional view of a non-volatile graphene switch in a "closed" state in accordance with the present principles; [0011]
FIG. 3 is a graph illustrating threshold voltages of a graphene switch according to the present principles; [0012]
FIG. 4 is a graph illustrating threshold voltages of a non-volatile graphene switch according to the present principles; [0013]
FIG. 5 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; [0014]
FIG. 6 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; YO R₉₂₀ 11 0435US₂ (163-569 CON) Page 3 of 17 …
FIG. 7 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; [0016]
FIG. 8 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; [0017]
FIG. 9 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; [0018] FIG 10 is a diagram of a step of forming a …
FIG. 10, additional dielectric material is deposited onto substrate 502 to form extended substrate 1002. It is specifically contemplated that the new material …
FIG. 11 is a diagram of a step of forming a non-volatile graphene switch according to the present principles; [0020]
FIG. 12 is a block/flow diagram of fabricating a non-volatile graphene switch according to the present principles; and [0021]
FIG. 13 is a diagram of an alternative embodiment of a non- volatile graphene switch according to the present principles.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a non-volatile switch, comprising: depositing gate material in a recess of a substrate; depositing drain metal in a recess of the gate material; planarizing the gate material, drain metal, and substrate; forming s idewal l s by depositing material on the substrate around the gate material; forming a flexible conductive element between the sidewal ls to establish a gap between the flexible conductive element and the gate material, wherein the gap separating the flexible conductive element and the gate material is sized to create a negative threshold voltage at the gate material for opening a circuit; and forming a source terminal in electrical contact with the flexible conductive element.
The method of claim 1, wherein the flexible conductive element is formed from graphene.
The method of claim 1, further comprising forming a top gate that applies a restorative force to the flexible conductive element to open the circuit when a top threshold voltage is applied.
The method of claim 1, wherein the source terminal is formed over the flexible conductive element. YO R₉₂₀₁₁₀₄₃₅US₂ (163-569 CON) Page 16 of 17
Layer stacks claimed or described, ordered top of device to substrate.
non-volatile graphene nanomechanical switch
Materials described outside the worked examples.
gate material
drain metal
flexible conductive element
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph illustrating threshold voltages of a graphene switch according to the present principles; [0012]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
gate threshold voltage (closing) | 2.5 V | C |
gate material width | 10 µm |
Related documents with shared materials, methods, properties, or citations.
graphene
C
polysilicon
Si
silicon dioxide
SiO₂
dielectric layer
FIG. 4 is a graph illustrating threshold voltages of a non-volatile graphene switch according to the present principles; [0013]
drain contact length | 3 µm | drain metal |
graphene suspension height above gate/drain | 0.5 µm | C |
PHOTOSENSING DEVICE WITH GRAPHENE
graphene
C
polysilicon
Si
silicon dioxide
SiO₂
dielectric layer
FIG. 4 is a graph illustrating threshold voltages of a non-volatile graphene switch according to the present principles; [0013]
drain contact length | 3 µm | drain metal |
graphene suspension height above gate/drain | 0.5 µm | C |
PHOTOSENSING DEVICE WITH GRAPHENE
graphene
C
polysilicon
Si
silicon dioxide
SiO₂
dielectric layer
FIG. 4 is a graph illustrating threshold voltages of a non-volatile graphene switch according to the present principles; [0013]
drain contact length | 3 µm | drain metal |
graphene suspension height above gate/drain | 0.5 µm | C |
PHOTOSENSING DEVICE WITH GRAPHENE
graphene
C
polysilicon
Si
silicon dioxide
SiO₂
dielectric layer
FIG. 4 is a graph illustrating threshold voltages of a non-volatile graphene switch according to the present principles; [0013]
drain contact length | 3 µm | drain metal |
graphene suspension height above gate/drain | 0.5 µm | C |
PHOTOSENSING DEVICE WITH GRAPHENE