Patent
US 8,841,220GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHT SOURCE, AND METHOD FOR FORMING UNEVENNESS STRUCTURE
Masaki FUJIKANE
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,841,220Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 0 A is a graph showing relations between the width A₈Ga o f an angle o f incidence range in which light could be extracted, the texture period d and the …
FIG. 2, the m plane is parallel to the c axis and intersects with the c plane at right angles. On the m plane, Ga atoms and nitrogen atoms are on the same …
FIGS. 3A through 3D are schematic representations illustrating representative crystallographic plane orientations of a hexagonal wurtzite structure. [0020]
FIG. 4A is a cross-sectional view illustrating an example in which a gallium nitride based semiconductor light- emitting element as an exemplary embodiment of …
FIG. 5A is a cross-sectional view illustrating a status of a GaN based semiconductor light- emitting element having a crystal plane other than a c-plane …
FIG. 6 is a view illustrating the structure of a nitride semiconductor light-emitting element having a crystal plane other than a c plane. [0026]
FIG. 7 is a view illustrating the structure of a modified example of the nitride semiconductor light-emitting element having a crystal plane other than a c …
FIG. 8 is a view illustrating the structure of another modified example of the nitride semiconductor light- emitting element having a crystal plane other than a …
FIG. 9 schematically illustrates h o w an m th- order diffracted light ray is produced by the unevenness structure. [0029]
FIG. 10 C is a graph showing relations between the width A GcN of an angle of incidence range in which light could be extracted, the texture period d and the …
FIG. 11 or a generally triangular pyramid shape, their surface never intersects with the a axis at right angles and is never parallel to the a axis, either. …
FIG. 12 is a view illustrating the structure of a nitride semiconductor light-emitting element having a crystal plane other than a c plane according to a …
FIG. 13 is a view illustrating the structure of a modified example of the nitride semiconductor light-emitting element having a crystal plane other than a c …
FIG. 14 is a view illustrating the structure of 13 P₆₃₂₇₈₄-02 B₂₀₈ 4MT another modified example of the nitride semiconductor light- emitting element having a …
FIG. 15 is a photograph showing a result obtained by subjecting an m -plane GaN substrate, which had not gone through any surface modification process, to the …
FIG. 16A is a scanning electron microscope (SEM) photograph of a substrate which was obtained by subjecting an m -plane GaN substrate, which had gone through a …
FIG. 17 is a SE M perspective photograph showing hemispherical projections, which had been formed to have a diameter of 10 10 p m on an m -plane GaN substrate …
FIG. 18 shows the luminous intensity distributions with the actually measured emission intensities plotted as the ordinates. [0049]
FIG. 19 shows the luminous intensity distributions normalized with an emission intensity at zero degrees. [0050]
FIG. 20B is a SE M photograph showing a cross section of the substrate on which the colloidal crystal layer was subjected to the dry etching process for six …
FIG. 21B is a SE M photograph showing the upper surface of the substrate on which the dual colloidal crystal 15 P₆₃₂₇₈₄-02 B₂₀₈₄MT layer was subjected to a dry …
FIG. 22 C is a SE M photograph showing a cross section of the m -plane GaN substrate which was covered with the colloidal crystal layer comprised of S iO 2 …
FIG. 23B is a SE M photograph showing the upper surface of the m -plane GaN substrate which was covered with the colloidal crystal layer comprised of Si O 2 …
FIG. 24 C is a SE M photograph showing a cross section of the m -plane GaN substrate which was covered with the colloidal crystal layer comprised of particles …
FIG. 25A is a SE M photograph showing a portion of a wet-etched m -plane GaN substrate in the vicinity of the -c axis. [0065]
FIG. 26 is a cross-sectional view illustrating an exemplary embodiment of a white light source. [0067]
FIG. 27 is a flowchart showing an exemplary procedure of a method of making a surface modified semiconductor according to an exemplary embodiment of the 18 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No. 13/892,637 PATENT AMENDMENTS IN THE CLAIMS 1.- 22. canceled
A method for forming an unevenness structure, the method comprising the steps of: (SO) providing a gallium nitride based semiconductor, of which the surface is a crystal plane other than a c plane; (S₁) covering the surface of the gallium nitride based semiconductor with a colloidal crystal layer composed of colloidal particles which are arranged periodically, after the step (SO) has been performed; and (S₂) etching the surface of the gallium nitride based semiconductor using the colloidal crystal layer as a mask to form the unevenness structure corresponding to an arrangement pattern of the colloidal particles that form the colloidal crystal layer on the surface of the gallium nitride based semiconductor, after the step (S 1) has been performed.
The method of Claim 23, the method further comprising: a step of exposing the surface of the gallium nitride based semiconductor to an oxygen plasma atmosphere between the step (SO) and the step (S 1).
The method of Claim 23, wherein the colloidal particles are arranged in a period that is approximately as long as a wavelength of visible radiation.
The method of Claim 23, wherein the colloidal particles are arranged by a self-organizing process in the step (S 1).
The method of Claim 23, wherein roughness curve elements of the unevenness structure have an average length (RSm) of 150 nm to 800 nm.
The method of claim 23, wherein the step (S 1) includes the steps of: (S₁ A) dipping the gallium nitride based semiconductor in a solution including the particles; and (S₁ B) pulling up the gallium nitride based semiconductor from the solution after the step (S 1 A) has been performed.
The method of Claim 23, wherein each nanoparticle has a size of 10-9 to 10 -6 m.
The method of Claim 23, wherein the surface of the gallium nitride based semiconductor is an m -plane.
The method of Claim 23, wherein the colloidal particles are made of at least one selected from the group consisting of SiO 2, Ti O 2, ZnO, Au, Ag, polystyrene, a benzoguanamine-melamine-formaldehyde condensate and cross- l inked polymethylmethacrylate.
The method of Claim 23, wherein a plurality of projections are formed at random on the surface of the gallium nitride based semiconductor when viewed in a cross-sectional view, after the step (S 2) has been performed. 3 of 4
Materials described outside the worked examples.
gallium nitride based semiconductor
GaN
colloidal particles
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 0 A is a graph showing relations between the width A₈Ga o f an angle o f incidence range in which light could be extracted, the texture period d and the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average length of roughness curve elements (RSm) | 150–800 | GaN |
Thickness | 150–800 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,841,220Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 0 A is a graph showing relations between the width A₈Ga o f an angle o f incidence range in which light could be extracted, the texture period d and the …
FIG. 2, the m plane is parallel to the c axis and intersects with the c plane at right angles. On the m plane, Ga atoms and nitrogen atoms are on the same …
FIGS. 3A through 3D are schematic representations illustrating representative crystallographic plane orientations of a hexagonal wurtzite structure. [0020]
FIG. 4A is a cross-sectional view illustrating an example in which a gallium nitride based semiconductor light- emitting element as an exemplary embodiment of …
FIG. 5A is a cross-sectional view illustrating a status of a GaN based semiconductor light- emitting element having a crystal plane other than a c-plane …
FIG. 6 is a view illustrating the structure of a nitride semiconductor light-emitting element having a crystal plane other than a c plane. [0026]
FIG. 7 is a view illustrating the structure of a modified example of the nitride semiconductor light-emitting element having a crystal plane other than a c …
FIG. 8 is a view illustrating the structure of another modified example of the nitride semiconductor light- emitting element having a crystal plane other than a …
FIG. 9 schematically illustrates h o w an m th- order diffracted light ray is produced by the unevenness structure. [0029]
FIG. 10 C is a graph showing relations between the width A GcN of an angle of incidence range in which light could be extracted, the texture period d and the …
FIG. 11 or a generally triangular pyramid shape, their surface never intersects with the a axis at right angles and is never parallel to the a axis, either. …
FIG. 12 is a view illustrating the structure of a nitride semiconductor light-emitting element having a crystal plane other than a c plane according to a …
FIG. 13 is a view illustrating the structure of a modified example of the nitride semiconductor light-emitting element having a crystal plane other than a c …
FIG. 14 is a view illustrating the structure of 13 P₆₃₂₇₈₄-02 B₂₀₈ 4MT another modified example of the nitride semiconductor light- emitting element having a …
FIG. 15 is a photograph showing a result obtained by subjecting an m -plane GaN substrate, which had not gone through any surface modification process, to the …
FIG. 16A is a scanning electron microscope (SEM) photograph of a substrate which was obtained by subjecting an m -plane GaN substrate, which had gone through a …
FIG. 17 is a SE M perspective photograph showing hemispherical projections, which had been formed to have a diameter of 10 10 p m on an m -plane GaN substrate …
FIG. 18 shows the luminous intensity distributions with the actually measured emission intensities plotted as the ordinates. [0049]
FIG. 19 shows the luminous intensity distributions normalized with an emission intensity at zero degrees. [0050]
FIG. 20B is a SE M photograph showing a cross section of the substrate on which the colloidal crystal layer was subjected to the dry etching process for six …
FIG. 21B is a SE M photograph showing the upper surface of the substrate on which the dual colloidal crystal 15 P₆₃₂₇₈₄-02 B₂₀₈₄MT layer was subjected to a dry …
FIG. 22 C is a SE M photograph showing a cross section of the m -plane GaN substrate which was covered with the colloidal crystal layer comprised of S iO 2 …
FIG. 23B is a SE M photograph showing the upper surface of the m -plane GaN substrate which was covered with the colloidal crystal layer comprised of Si O 2 …
FIG. 24 C is a SE M photograph showing a cross section of the m -plane GaN substrate which was covered with the colloidal crystal layer comprised of particles …
FIG. 25A is a SE M photograph showing a portion of a wet-etched m -plane GaN substrate in the vicinity of the -c axis. [0065]
FIG. 26 is a cross-sectional view illustrating an exemplary embodiment of a white light source. [0067]
FIG. 27 is a flowchart showing an exemplary procedure of a method of making a surface modified semiconductor according to an exemplary embodiment of the 18 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No. 13/892,637 PATENT AMENDMENTS IN THE CLAIMS 1.- 22. canceled
A method for forming an unevenness structure, the method comprising the steps of: (SO) providing a gallium nitride based semiconductor, of which the surface is a crystal plane other than a c plane; (S₁) covering the surface of the gallium nitride based semiconductor with a colloidal crystal layer composed of colloidal particles which are arranged periodically, after the step (SO) has been performed; and (S₂) etching the surface of the gallium nitride based semiconductor using the colloidal crystal layer as a mask to form the unevenness structure corresponding to an arrangement pattern of the colloidal particles that form the colloidal crystal layer on the surface of the gallium nitride based semiconductor, after the step (S 1) has been performed.
The method of Claim 23, the method further comprising: a step of exposing the surface of the gallium nitride based semiconductor to an oxygen plasma atmosphere between the step (SO) and the step (S 1).
The method of Claim 23, wherein the colloidal particles are arranged in a period that is approximately as long as a wavelength of visible radiation.
The method of Claim 23, wherein the colloidal particles are arranged by a self-organizing process in the step (S 1).
The method of Claim 23, wherein roughness curve elements of the unevenness structure have an average length (RSm) of 150 nm to 800 nm.
The method of claim 23, wherein the step (S 1) includes the steps of: (S₁ A) dipping the gallium nitride based semiconductor in a solution including the particles; and (S₁ B) pulling up the gallium nitride based semiconductor from the solution after the step (S 1 A) has been performed.
The method of Claim 23, wherein each nanoparticle has a size of 10-9 to 10 -6 m.
The method of Claim 23, wherein the surface of the gallium nitride based semiconductor is an m -plane.
The method of Claim 23, wherein the colloidal particles are made of at least one selected from the group consisting of SiO 2, Ti O 2, ZnO, Au, Ag, polystyrene, a benzoguanamine-melamine-formaldehyde condensate and cross- l inked polymethylmethacrylate.
The method of Claim 23, wherein a plurality of projections are formed at random on the surface of the gallium nitride based semiconductor when viewed in a cross-sectional view, after the step (S 2) has been performed. 3 of 4
Materials described outside the worked examples.
gallium nitride based semiconductor
GaN
colloidal particles
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 0 A is a graph showing relations between the width A₈Ga o f an angle o f incidence range in which light could be extracted, the texture period d and the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average length of roughness curve elements (RSm) | 150–800 | GaN |
Thickness | 150–800 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,841,220Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 0 A is a graph showing relations between the width A₈Ga o f an angle o f incidence range in which light could be extracted, the texture period d and the …
FIG. 2, the m plane is parallel to the c axis and intersects with the c plane at right angles. On the m plane, Ga atoms and nitrogen atoms are on the same …
FIGS. 3A through 3D are schematic representations illustrating representative crystallographic plane orientations of a hexagonal wurtzite structure. [0020]
FIG. 4A is a cross-sectional view illustrating an example in which a gallium nitride based semiconductor light- emitting element as an exemplary embodiment of …
FIG. 5A is a cross-sectional view illustrating a status of a GaN based semiconductor light- emitting element having a crystal plane other than a c-plane …
FIG. 6 is a view illustrating the structure of a nitride semiconductor light-emitting element having a crystal plane other than a c plane. [0026]
FIG. 7 is a view illustrating the structure of a modified example of the nitride semiconductor light-emitting element having a crystal plane other than a c …
FIG. 8 is a view illustrating the structure of another modified example of the nitride semiconductor light- emitting element having a crystal plane other than a …
FIG. 9 schematically illustrates h o w an m th- order diffracted light ray is produced by the unevenness structure. [0029]
FIG. 10 C is a graph showing relations between the width A GcN of an angle of incidence range in which light could be extracted, the texture period d and the …
FIG. 11 or a generally triangular pyramid shape, their surface never intersects with the a axis at right angles and is never parallel to the a axis, either. …
FIG. 12 is a view illustrating the structure of a nitride semiconductor light-emitting element having a crystal plane other than a c plane according to a …
FIG. 13 is a view illustrating the structure of a modified example of the nitride semiconductor light-emitting element having a crystal plane other than a c …
FIG. 14 is a view illustrating the structure of 13 P₆₃₂₇₈₄-02 B₂₀₈ 4MT another modified example of the nitride semiconductor light- emitting element having a …
FIG. 15 is a photograph showing a result obtained by subjecting an m -plane GaN substrate, which had not gone through any surface modification process, to the …
FIG. 16A is a scanning electron microscope (SEM) photograph of a substrate which was obtained by subjecting an m -plane GaN substrate, which had gone through a …
FIG. 17 is a SE M perspective photograph showing hemispherical projections, which had been formed to have a diameter of 10 10 p m on an m -plane GaN substrate …
FIG. 18 shows the luminous intensity distributions with the actually measured emission intensities plotted as the ordinates. [0049]
FIG. 19 shows the luminous intensity distributions normalized with an emission intensity at zero degrees. [0050]
FIG. 20B is a SE M photograph showing a cross section of the substrate on which the colloidal crystal layer was subjected to the dry etching process for six …
FIG. 21B is a SE M photograph showing the upper surface of the substrate on which the dual colloidal crystal 15 P₆₃₂₇₈₄-02 B₂₀₈₄MT layer was subjected to a dry …
FIG. 22 C is a SE M photograph showing a cross section of the m -plane GaN substrate which was covered with the colloidal crystal layer comprised of S iO 2 …
FIG. 23B is a SE M photograph showing the upper surface of the m -plane GaN substrate which was covered with the colloidal crystal layer comprised of Si O 2 …
FIG. 24 C is a SE M photograph showing a cross section of the m -plane GaN substrate which was covered with the colloidal crystal layer comprised of particles …
FIG. 25A is a SE M photograph showing a portion of a wet-etched m -plane GaN substrate in the vicinity of the -c axis. [0065]
FIG. 26 is a cross-sectional view illustrating an exemplary embodiment of a white light source. [0067]
FIG. 27 is a flowchart showing an exemplary procedure of a method of making a surface modified semiconductor according to an exemplary embodiment of the 18 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No. 13/892,637 PATENT AMENDMENTS IN THE CLAIMS 1.- 22. canceled
A method for forming an unevenness structure, the method comprising the steps of: (SO) providing a gallium nitride based semiconductor, of which the surface is a crystal plane other than a c plane; (S₁) covering the surface of the gallium nitride based semiconductor with a colloidal crystal layer composed of colloidal particles which are arranged periodically, after the step (SO) has been performed; and (S₂) etching the surface of the gallium nitride based semiconductor using the colloidal crystal layer as a mask to form the unevenness structure corresponding to an arrangement pattern of the colloidal particles that form the colloidal crystal layer on the surface of the gallium nitride based semiconductor, after the step (S 1) has been performed.
The method of Claim 23, the method further comprising: a step of exposing the surface of the gallium nitride based semiconductor to an oxygen plasma atmosphere between the step (SO) and the step (S 1).
The method of Claim 23, wherein the colloidal particles are arranged in a period that is approximately as long as a wavelength of visible radiation.
The method of Claim 23, wherein the colloidal particles are arranged by a self-organizing process in the step (S 1).
The method of Claim 23, wherein roughness curve elements of the unevenness structure have an average length (RSm) of 150 nm to 800 nm.
The method of claim 23, wherein the step (S 1) includes the steps of: (S₁ A) dipping the gallium nitride based semiconductor in a solution including the particles; and (S₁ B) pulling up the gallium nitride based semiconductor from the solution after the step (S 1 A) has been performed.
The method of Claim 23, wherein each nanoparticle has a size of 10-9 to 10 -6 m.
The method of Claim 23, wherein the surface of the gallium nitride based semiconductor is an m -plane.
The method of Claim 23, wherein the colloidal particles are made of at least one selected from the group consisting of SiO 2, Ti O 2, ZnO, Au, Ag, polystyrene, a benzoguanamine-melamine-formaldehyde condensate and cross- l inked polymethylmethacrylate.
The method of Claim 23, wherein a plurality of projections are formed at random on the surface of the gallium nitride based semiconductor when viewed in a cross-sectional view, after the step (S 2) has been performed. 3 of 4
Materials described outside the worked examples.
gallium nitride based semiconductor
GaN
colloidal particles
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 0 A is a graph showing relations between the width A₈Ga o f an angle o f incidence range in which light could be extracted, the texture period d and the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average length of roughness curve elements (RSm) | 150–800 | GaN |
Thickness | 150–800 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,841,220Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 0 A is a graph showing relations between the width A₈Ga o f an angle o f incidence range in which light could be extracted, the texture period d and the …
FIG. 2, the m plane is parallel to the c axis and intersects with the c plane at right angles. On the m plane, Ga atoms and nitrogen atoms are on the same …
FIGS. 3A through 3D are schematic representations illustrating representative crystallographic plane orientations of a hexagonal wurtzite structure. [0020]
FIG. 4A is a cross-sectional view illustrating an example in which a gallium nitride based semiconductor light- emitting element as an exemplary embodiment of …
FIG. 5A is a cross-sectional view illustrating a status of a GaN based semiconductor light- emitting element having a crystal plane other than a c-plane …
FIG. 6 is a view illustrating the structure of a nitride semiconductor light-emitting element having a crystal plane other than a c plane. [0026]
FIG. 7 is a view illustrating the structure of a modified example of the nitride semiconductor light-emitting element having a crystal plane other than a c …
FIG. 8 is a view illustrating the structure of another modified example of the nitride semiconductor light- emitting element having a crystal plane other than a …
FIG. 9 schematically illustrates h o w an m th- order diffracted light ray is produced by the unevenness structure. [0029]
FIG. 10 C is a graph showing relations between the width A GcN of an angle of incidence range in which light could be extracted, the texture period d and the …
FIG. 11 or a generally triangular pyramid shape, their surface never intersects with the a axis at right angles and is never parallel to the a axis, either. …
FIG. 12 is a view illustrating the structure of a nitride semiconductor light-emitting element having a crystal plane other than a c plane according to a …
FIG. 13 is a view illustrating the structure of a modified example of the nitride semiconductor light-emitting element having a crystal plane other than a c …
FIG. 14 is a view illustrating the structure of 13 P₆₃₂₇₈₄-02 B₂₀₈ 4MT another modified example of the nitride semiconductor light- emitting element having a …
FIG. 15 is a photograph showing a result obtained by subjecting an m -plane GaN substrate, which had not gone through any surface modification process, to the …
FIG. 16A is a scanning electron microscope (SEM) photograph of a substrate which was obtained by subjecting an m -plane GaN substrate, which had gone through a …
FIG. 17 is a SE M perspective photograph showing hemispherical projections, which had been formed to have a diameter of 10 10 p m on an m -plane GaN substrate …
FIG. 18 shows the luminous intensity distributions with the actually measured emission intensities plotted as the ordinates. [0049]
FIG. 19 shows the luminous intensity distributions normalized with an emission intensity at zero degrees. [0050]
FIG. 20B is a SE M photograph showing a cross section of the substrate on which the colloidal crystal layer was subjected to the dry etching process for six …
FIG. 21B is a SE M photograph showing the upper surface of the substrate on which the dual colloidal crystal 15 P₆₃₂₇₈₄-02 B₂₀₈₄MT layer was subjected to a dry …
FIG. 22 C is a SE M photograph showing a cross section of the m -plane GaN substrate which was covered with the colloidal crystal layer comprised of S iO 2 …
FIG. 23B is a SE M photograph showing the upper surface of the m -plane GaN substrate which was covered with the colloidal crystal layer comprised of Si O 2 …
FIG. 24 C is a SE M photograph showing a cross section of the m -plane GaN substrate which was covered with the colloidal crystal layer comprised of particles …
FIG. 25A is a SE M photograph showing a portion of a wet-etched m -plane GaN substrate in the vicinity of the -c axis. [0065]
FIG. 26 is a cross-sectional view illustrating an exemplary embodiment of a white light source. [0067]
FIG. 27 is a flowchart showing an exemplary procedure of a method of making a surface modified semiconductor according to an exemplary embodiment of the 18 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No. 13/892,637 PATENT AMENDMENTS IN THE CLAIMS 1.- 22. canceled
A method for forming an unevenness structure, the method comprising the steps of: (SO) providing a gallium nitride based semiconductor, of which the surface is a crystal plane other than a c plane; (S₁) covering the surface of the gallium nitride based semiconductor with a colloidal crystal layer composed of colloidal particles which are arranged periodically, after the step (SO) has been performed; and (S₂) etching the surface of the gallium nitride based semiconductor using the colloidal crystal layer as a mask to form the unevenness structure corresponding to an arrangement pattern of the colloidal particles that form the colloidal crystal layer on the surface of the gallium nitride based semiconductor, after the step (S 1) has been performed.
The method of Claim 23, the method further comprising: a step of exposing the surface of the gallium nitride based semiconductor to an oxygen plasma atmosphere between the step (SO) and the step (S 1).
The method of Claim 23, wherein the colloidal particles are arranged in a period that is approximately as long as a wavelength of visible radiation.
The method of Claim 23, wherein the colloidal particles are arranged by a self-organizing process in the step (S 1).
The method of Claim 23, wherein roughness curve elements of the unevenness structure have an average length (RSm) of 150 nm to 800 nm.
The method of claim 23, wherein the step (S 1) includes the steps of: (S₁ A) dipping the gallium nitride based semiconductor in a solution including the particles; and (S₁ B) pulling up the gallium nitride based semiconductor from the solution after the step (S 1 A) has been performed.
The method of Claim 23, wherein each nanoparticle has a size of 10-9 to 10 -6 m.
The method of Claim 23, wherein the surface of the gallium nitride based semiconductor is an m -plane.
The method of Claim 23, wherein the colloidal particles are made of at least one selected from the group consisting of SiO 2, Ti O 2, ZnO, Au, Ag, polystyrene, a benzoguanamine-melamine-formaldehyde condensate and cross- l inked polymethylmethacrylate.
The method of Claim 23, wherein a plurality of projections are formed at random on the surface of the gallium nitride based semiconductor when viewed in a cross-sectional view, after the step (S 2) has been performed. 3 of 4
Materials described outside the worked examples.
gallium nitride based semiconductor
GaN
colloidal particles
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 0 A is a graph showing relations between the width A₈Ga o f an angle o f incidence range in which light could be extracted, the texture period d and the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average length of roughness curve elements (RSm) | 150–800 | GaN |
Thickness | 150–800 nm |
Related documents with shared materials, methods, properties, or citations.
solvent
SiO₂
TiO₂
ZnO
Au
Ag
polystyrene
benzoguanamine-melamine-formaldehyde condensate
cross-linked polymethylmethacrylate
FIG. 2, the m plane is parallel to the c axis and intersects with the c plane at right angles. On the m plane, Ga atoms and nitrogen atoms are on the same …
FIG. 10 C is a graph showing relations between the width A GcN of an angle of incidence range in which light could be extracted, the texture period d and the …
FIG. 16A is a scanning electron microscope (SEM) photograph of a substrate which was obtained by subjecting an m -plane GaN substrate, which had gone through a …
FIG. 21B is a SE M photograph showing the upper surface of the substrate on which the dual colloidal crystal 15 P₆₃₂₇₈₄-02 B₂₀₈₄MT layer was subjected to a dry …
FIG. 22 C is a SE M photograph showing a cross section of the m -plane GaN substrate which was covered with the colloidal crystal layer comprised of S iO 2 …
| — |
Thickness | 10–800 nm | — |
Thickness | 150–400 nm | — |
Thickness | 50–700 nm | — |
Thickness | 100–500 nm | — |
Thickness | 3–20 nm | — |
Thickness | 5–30 nm | — |
Thickness | 50–300 nm | — |
Thickness | 15–30 nm | — |
Thickness | 100–300 nm | — |
Thickness | 500–900 nm | — |
Thickness | 100–200 nm | — |
Thickness | 300–600 nm | — |
solvent
SiO₂
TiO₂
ZnO
Au
Ag
polystyrene
benzoguanamine-melamine-formaldehyde condensate
cross-linked polymethylmethacrylate
FIG. 2, the m plane is parallel to the c axis and intersects with the c plane at right angles. On the m plane, Ga atoms and nitrogen atoms are on the same …
FIG. 10 C is a graph showing relations between the width A GcN of an angle of incidence range in which light could be extracted, the texture period d and the …
FIG. 16A is a scanning electron microscope (SEM) photograph of a substrate which was obtained by subjecting an m -plane GaN substrate, which had gone through a …
FIG. 21B is a SE M photograph showing the upper surface of the substrate on which the dual colloidal crystal 15 P₆₃₂₇₈₄-02 B₂₀₈₄MT layer was subjected to a dry …
FIG. 22 C is a SE M photograph showing a cross section of the m -plane GaN substrate which was covered with the colloidal crystal layer comprised of S iO 2 …
| — |
Thickness | 10–800 nm | — |
Thickness | 150–400 nm | — |
Thickness | 50–700 nm | — |
Thickness | 100–500 nm | — |
Thickness | 3–20 nm | — |
Thickness | 5–30 nm | — |
Thickness | 50–300 nm | — |
Thickness | 15–30 nm | — |
Thickness | 100–300 nm | — |
Thickness | 500–900 nm | — |
Thickness | 100–200 nm | — |
Thickness | 300–600 nm | — |
solvent
SiO₂
TiO₂
ZnO
Au
Ag
polystyrene
benzoguanamine-melamine-formaldehyde condensate
cross-linked polymethylmethacrylate
FIG. 2, the m plane is parallel to the c axis and intersects with the c plane at right angles. On the m plane, Ga atoms and nitrogen atoms are on the same …
FIG. 10 C is a graph showing relations between the width A GcN of an angle of incidence range in which light could be extracted, the texture period d and the …
FIG. 16A is a scanning electron microscope (SEM) photograph of a substrate which was obtained by subjecting an m -plane GaN substrate, which had gone through a …
FIG. 21B is a SE M photograph showing the upper surface of the substrate on which the dual colloidal crystal 15 P₆₃₂₇₈₄-02 B₂₀₈₄MT layer was subjected to a dry …
FIG. 22 C is a SE M photograph showing a cross section of the m -plane GaN substrate which was covered with the colloidal crystal layer comprised of S iO 2 …
| — |
Thickness | 10–800 nm | — |
Thickness | 150–400 nm | — |
Thickness | 50–700 nm | — |
Thickness | 100–500 nm | — |
Thickness | 3–20 nm | — |
Thickness | 5–30 nm | — |
Thickness | 50–300 nm | — |
Thickness | 15–30 nm | — |
Thickness | 100–300 nm | — |
Thickness | 500–900 nm | — |
Thickness | 100–200 nm | — |
Thickness | 300–600 nm | — |
solvent
SiO₂
TiO₂
ZnO
Au
Ag
polystyrene
benzoguanamine-melamine-formaldehyde condensate
cross-linked polymethylmethacrylate
FIG. 2, the m plane is parallel to the c axis and intersects with the c plane at right angles. On the m plane, Ga atoms and nitrogen atoms are on the same …
FIG. 10 C is a graph showing relations between the width A GcN of an angle of incidence range in which light could be extracted, the texture period d and the …
FIG. 16A is a scanning electron microscope (SEM) photograph of a substrate which was obtained by subjecting an m -plane GaN substrate, which had gone through a …
FIG. 21B is a SE M photograph showing the upper surface of the substrate on which the dual colloidal crystal 15 P₆₃₂₇₈₄-02 B₂₀₈₄MT layer was subjected to a dry …
FIG. 22 C is a SE M photograph showing a cross section of the m -plane GaN substrate which was covered with the colloidal crystal layer comprised of S iO 2 …
| — |
Thickness | 10–800 nm | — |
Thickness | 150–400 nm | — |
Thickness | 50–700 nm | — |
Thickness | 100–500 nm | — |
Thickness | 3–20 nm | — |
Thickness | 5–30 nm | — |
Thickness | 50–300 nm | — |
Thickness | 15–30 nm | — |
Thickness | 100–300 nm | — |
Thickness | 500–900 nm | — |
Thickness | 100–200 nm | — |
Thickness | 300–600 nm | — |