Patent
US 9,876,136SEPARATION METHOD OF GaN SUBSTRATE BY WET ETCHING
Dong-Seon LEE
US
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Patent
Atlas literature
Patent
US 9,876,136Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of separating a GaN substrate by wet etching, com prising: fo rming o xide layers separated fro m each other and an n-GaN column in each space between the o xide layers o n a substrate; fo rming an n-GaN layer covering an upper space o n the o xide layers and the n-GaN column in each space, wherein an upper side of the oxide layers and the n-GaN column is in contact with the n-GaN layer and an under side of the oxide layers and the n- G aN column is in contact with the substrate, and the n-GaN layer is grown in a convex-concave shape having a pyramidal structure; sequentially forming an active layer, a p-GaN layer, and a p-type electrode on the n- GaN layer; and removing the oxide layers and wet etching the n- G aN column in each space between the re m oved o xide layers to separate the substrate. Previously presented
The method of separating a G aN substrate by wet etching according to claim 1, wherein the o xide layers separated fro m each other o n the substrate are f o rmed of SiO 2 or SOG. Original
The method of separating a GaN substrate by wet etching according to claim 1, wherein, in removing the oxide layers and wet etching the n- GaN column, removal o f the oxide layers is performed using a buffered oxide etchant (BOE) or HF solution. Previously presented
The method of separating a GaN substrate by wet etching according to claim 1, wherein, in removing the oxide layers and wet etching the n- GaN column, wet etching of the n- G aN column is performed using a KOH solution. Previously presented
The method of separating a G aN substrate by wet etching according to claim 1, further c o mpr isi ng: depositing an oxide layer on the substrate; forming vertical holes in the oxide layer; and forming the n-GaN column in the vertical holes in the oxide layer. Previously presented
Canceled
8. Canceled
12-13. Canceled
14. A method of separating a GaN substrate by wet etching, comprising: forming a first n-GaN layer on a substrate; f orming n-GaN columns by etching the first n-GaN layer; f orming oxide layers in each space between the n-GaN columns through passivation of oxide; forming a second n-GaN layer covering an upper space on the oxide la yers and the n- G aN c o lumns, wherein an upper side of the o xide layers and the n- G aN c olum ns is in contact with the second n-GaN layer and an under side of the o xide layers and the n-GaN c o lumns is in contact with the first n-GaN layer; s equent i ally f o rming an active layer, a p-GaN layer, and a p-type electrode o n the second n-GaN layer; and removing the first n-GaN layer and the oxide layers, and wet etching the n- GaN columns to separate the substrate, wherein the second n-GaN layer has a bottom surface substantially planar after the wet etching. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED structure
Materials described outside the worked examples.
n-GaN
GaN
active layer (InAlGaN-based)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 20–30 minutes | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,876,136Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of separating a GaN substrate by wet etching, com prising: fo rming o xide layers separated fro m each other and an n-GaN column in each space between the o xide layers o n a substrate; fo rming an n-GaN layer covering an upper space o n the o xide layers and the n-GaN column in each space, wherein an upper side of the oxide layers and the n-GaN column is in contact with the n-GaN layer and an under side of the oxide layers and the n- G aN column is in contact with the substrate, and the n-GaN layer is grown in a convex-concave shape having a pyramidal structure; sequentially forming an active layer, a p-GaN layer, and a p-type electrode on the n- GaN layer; and removing the oxide layers and wet etching the n- G aN column in each space between the re m oved o xide layers to separate the substrate. Previously presented
The method of separating a G aN substrate by wet etching according to claim 1, wherein the o xide layers separated fro m each other o n the substrate are f o rmed of SiO 2 or SOG. Original
The method of separating a GaN substrate by wet etching according to claim 1, wherein, in removing the oxide layers and wet etching the n- GaN column, removal o f the oxide layers is performed using a buffered oxide etchant (BOE) or HF solution. Previously presented
The method of separating a GaN substrate by wet etching according to claim 1, wherein, in removing the oxide layers and wet etching the n- GaN column, wet etching of the n- G aN column is performed using a KOH solution. Previously presented
The method of separating a G aN substrate by wet etching according to claim 1, further c o mpr isi ng: depositing an oxide layer on the substrate; forming vertical holes in the oxide layer; and forming the n-GaN column in the vertical holes in the oxide layer. Previously presented
Canceled
8. Canceled
12-13. Canceled
14. A method of separating a GaN substrate by wet etching, comprising: forming a first n-GaN layer on a substrate; f orming n-GaN columns by etching the first n-GaN layer; f orming oxide layers in each space between the n-GaN columns through passivation of oxide; forming a second n-GaN layer covering an upper space on the oxide la yers and the n- G aN c o lumns, wherein an upper side of the o xide layers and the n- G aN c olum ns is in contact with the second n-GaN layer and an under side of the o xide layers and the n-GaN c o lumns is in contact with the first n-GaN layer; s equent i ally f o rming an active layer, a p-GaN layer, and a p-type electrode o n the second n-GaN layer; and removing the first n-GaN layer and the oxide layers, and wet etching the n- GaN columns to separate the substrate, wherein the second n-GaN layer has a bottom surface substantially planar after the wet etching. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED structure
Materials described outside the worked examples.
n-GaN
GaN
active layer (InAlGaN-based)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 20–30 minutes | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,876,136Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of separating a GaN substrate by wet etching, com prising: fo rming o xide layers separated fro m each other and an n-GaN column in each space between the o xide layers o n a substrate; fo rming an n-GaN layer covering an upper space o n the o xide layers and the n-GaN column in each space, wherein an upper side of the oxide layers and the n-GaN column is in contact with the n-GaN layer and an under side of the oxide layers and the n- G aN column is in contact with the substrate, and the n-GaN layer is grown in a convex-concave shape having a pyramidal structure; sequentially forming an active layer, a p-GaN layer, and a p-type electrode on the n- GaN layer; and removing the oxide layers and wet etching the n- G aN column in each space between the re m oved o xide layers to separate the substrate. Previously presented
The method of separating a G aN substrate by wet etching according to claim 1, wherein the o xide layers separated fro m each other o n the substrate are f o rmed of SiO 2 or SOG. Original
The method of separating a GaN substrate by wet etching according to claim 1, wherein, in removing the oxide layers and wet etching the n- GaN column, removal o f the oxide layers is performed using a buffered oxide etchant (BOE) or HF solution. Previously presented
The method of separating a GaN substrate by wet etching according to claim 1, wherein, in removing the oxide layers and wet etching the n- GaN column, wet etching of the n- G aN column is performed using a KOH solution. Previously presented
The method of separating a G aN substrate by wet etching according to claim 1, further c o mpr isi ng: depositing an oxide layer on the substrate; forming vertical holes in the oxide layer; and forming the n-GaN column in the vertical holes in the oxide layer. Previously presented
Canceled
8. Canceled
12-13. Canceled
14. A method of separating a GaN substrate by wet etching, comprising: forming a first n-GaN layer on a substrate; f orming n-GaN columns by etching the first n-GaN layer; f orming oxide layers in each space between the n-GaN columns through passivation of oxide; forming a second n-GaN layer covering an upper space on the oxide la yers and the n- G aN c o lumns, wherein an upper side of the o xide layers and the n- G aN c olum ns is in contact with the second n-GaN layer and an under side of the o xide layers and the n-GaN c o lumns is in contact with the first n-GaN layer; s equent i ally f o rming an active layer, a p-GaN layer, and a p-type electrode o n the second n-GaN layer; and removing the first n-GaN layer and the oxide layers, and wet etching the n- GaN columns to separate the substrate, wherein the second n-GaN layer has a bottom surface substantially planar after the wet etching. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED structure
Materials described outside the worked examples.
n-GaN
GaN
active layer (InAlGaN-based)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 20–30 minutes | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,876,136Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of separating a GaN substrate by wet etching, com prising: fo rming o xide layers separated fro m each other and an n-GaN column in each space between the o xide layers o n a substrate; fo rming an n-GaN layer covering an upper space o n the o xide layers and the n-GaN column in each space, wherein an upper side of the oxide layers and the n-GaN column is in contact with the n-GaN layer and an under side of the oxide layers and the n- G aN column is in contact with the substrate, and the n-GaN layer is grown in a convex-concave shape having a pyramidal structure; sequentially forming an active layer, a p-GaN layer, and a p-type electrode on the n- GaN layer; and removing the oxide layers and wet etching the n- G aN column in each space between the re m oved o xide layers to separate the substrate. Previously presented
The method of separating a G aN substrate by wet etching according to claim 1, wherein the o xide layers separated fro m each other o n the substrate are f o rmed of SiO 2 or SOG. Original
The method of separating a GaN substrate by wet etching according to claim 1, wherein, in removing the oxide layers and wet etching the n- GaN column, removal o f the oxide layers is performed using a buffered oxide etchant (BOE) or HF solution. Previously presented
The method of separating a GaN substrate by wet etching according to claim 1, wherein, in removing the oxide layers and wet etching the n- GaN column, wet etching of the n- G aN column is performed using a KOH solution. Previously presented
The method of separating a G aN substrate by wet etching according to claim 1, further c o mpr isi ng: depositing an oxide layer on the substrate; forming vertical holes in the oxide layer; and forming the n-GaN column in the vertical holes in the oxide layer. Previously presented
Canceled
8. Canceled
12-13. Canceled
14. A method of separating a GaN substrate by wet etching, comprising: forming a first n-GaN layer on a substrate; f orming n-GaN columns by etching the first n-GaN layer; f orming oxide layers in each space between the n-GaN columns through passivation of oxide; forming a second n-GaN layer covering an upper space on the oxide la yers and the n- G aN c o lumns, wherein an upper side of the o xide layers and the n- G aN c olum ns is in contact with the second n-GaN layer and an under side of the o xide layers and the n-GaN c o lumns is in contact with the first n-GaN layer; s equent i ally f o rming an active layer, a p-GaN layer, and a p-type electrode o n the second n-GaN layer; and removing the first n-GaN layer and the oxide layers, and wet etching the n- GaN columns to separate the substrate, wherein the second n-GaN layer has a bottom surface substantially planar after the wet etching. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED structure
Materials described outside the worked examples.
n-GaN
GaN
active layer (InAlGaN-based)
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 20–30 minutes | — |
Related documents with shared materials, methods, properties, or citations.
p-type electrode
SiO₂
SOG (spin-on-glass)
buffered oxide etchant (BOE)
HF solution
HF
KOH solution
KOH
sapphire substrate
Al₂O₃
p-type electrode
SiO₂
SOG (spin-on-glass)
buffered oxide etchant (BOE)
HF solution
HF
KOH solution
KOH
sapphire substrate
Al₂O₃
p-type electrode
SiO₂
SOG (spin-on-glass)
buffered oxide etchant (BOE)
HF solution
HF
KOH solution
KOH
sapphire substrate
Al₂O₃
p-type electrode
SiO₂
SOG (spin-on-glass)
buffered oxide etchant (BOE)
HF solution
HF
KOH solution
KOH
sapphire substrate
Al₂O₃