METHOD FOR MANUFACTURING GAN-BASED FILM LED

Jyh Chiarng WU

Patent

Atlas literature

Patent

US 7,955,959

METHOD FOR MANUFACTURING GAN-BASED FILM LED

Jyh Chiarng WU, Xuejiao LIN, Qunfeng PAN, Meng Hsin YEH et al.

2011-06-07·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

1 independent · 10 dependent

1
IndependentSiO₂GaNGaN-based epitaxy (N type GaN-based semiconductor layer, active layer, P type GaN-based semiconductor layer)Agwelding metal (Au and Au alloy)heat sink substrateGaN vertical film LED with two-dimensional photonic crystal structure
A method for manufacturing GaN-based ﬁlm LED based on masklessly transferring photonic crystal structure, comprising the followings steps: 1) depositing a Si O 2 mask layer onto a sapphire substrate; 2) photoetching and fabricating periodically distributed circular holes on the Si O₂ mask layer, exposing the sapphire substrate at the area of circular holes to form two dimensional photonic crystals on the sapphire substrate; 3) growing undoped GaN material layer and GaN-base epitaxy in sequence on the sapphire substrate having said two dimensional photonic crystals using MOCVD process, the GaN-based epitaxy having a N type GaN-based semiconductor layer, an active layer and a P type GaN-based semiconductor layer; 4) depositing a P type Ohmic contact and reﬂective metal layer on a surface of the P type GaN-based semiconductor layer; 5) depositing welding metal including Au and Au alloy on the P type Ohmic contact and reﬂective metal layer; 6) bonding the GaN-based epitaxy onto a heat sink substrate by the welding metal; 7) removing the sapphire substrate to expose the interface at which the Si O 2 mask layer and the undoped GaN material layer coexist; 8) etching the undoped GaN material layer and Si O 2 mask layer of the exposed area simultaneously by dry etching process to expose the N type GaN-based semiconductor layer, and masklessly forming periodically distributed circular holes by using diﬀerent etching rates between the GaN material and the Si O₂ mask to expose the N type GaN-based semiconductor at the area of circular 9 holes, thereby forming two dimensional photonic crystals on the N type GaN-based semiconductor layer, wherein the projecting portions between the circular holes are undoped GaN material layer; 9) depositing a N type Ohmic contact electrode at central area of a surface having the two dimensional photonic crystal structure; 10) depositing a P type electrode at the back face of the heat sink substrate; and 11) forming GaN vertical LED chips in a process of slicing or cutting oﬀ.
1. 2
  Dependent← claim 1SiO₂
  The method for manufacturing GaN-based ﬁlm LED based on masklessly transferring photonic crystal structure according to Claim 1, wherein the thickness of the SiO₂ mask layer is 50 nm -1000 nm.
2. 3
  Dependent← claim 1GaN
  The method for manufacturing GaN-based ﬁlm LED based on masklessly transferring photonic crystal structure according to Claim 1, wherein the undoped GaN material layer is ﬁlled up into the area of the periodically distributed circular holes ﬁrstly.
3. 4
  Dependent← claim 1GaN
  The method for manufacturing GaN-based ﬁlm LED based on masklessly transferring photonic crystal structure according to Claim 1, wherein the thickness of the undoped GaN material layer is 1 pm-6pm.
4. 5
  Dependent← claim 1Ag
  The method for manufacturing GaN-based ﬁlm LED based on masklessly transferring photonic crystal structure according to Claim 1, wherein the P type Ohmic contact and reﬂective metal layer is Ag with a thickness of 50 nm-200nm.
5. 6
  Dependent← claim 1heat sink substrate
  The method for manufacturing GaN-based ﬁlm LED based on masklessly transferring photonic crystal structure according to Claim 1, wherein the material for preparing the heat sink substrate is selected from a group comprising GaAs, Ge, Si, Cu, Mo, WCu or MoCu.
6. 7
  Dependent← claim 1
  The method for manufacturing GaN-based ﬁlm LED based on masklessly transferring photonic crystal structure according to Claim 1, wherein the bonding manner between the GaN-based epitaxy and the heat sink substrate could be bonding linkage or electroplating.
7. 8
  Dependent← claim 1
  The method for manufacturing GaN-based ﬁlm LED based on masklessly transferring photonic crystal structure according to Claim 1, wherein the method of removing the sapphire substrate could be laser lift-oﬀ, grinding, wet erosion and any combination of two of the aforesaid processes.
8. 9
  Dependent← claim 1SiO₂GaN
  The method for manufacturing GaN-based ﬁlm LED based on masklessly transferring photonic crystal structure according to Claim 1, wherein the undoped GaN material layer and the SiO₂ mask layer are simultaneously etched with a ratio of etching rates of 6:1 between the undoped GaN material layer and the SiO₂ mask layer.
9. 10
  Dependent← claim 1
  The method for manufacturing GaN-based ﬁlm LED based on masklessly transferring photonic crystal structure according to Claim 1, wherein after step 8, a light-aided chemical erosion is performed on the GaN light exiting surface.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN vertical film LED with two-dimensional photonic crystal structure

N-type ohmic contact electrode (central area)N-type ohmic contact electrode (central area)

GaNundoped GaN material layer (photonic crystal projections)

GaN-based epitaxy (N type GaN-based semiconductor layer, active layer, P type GaN-based semiconductor layer)N-type GaN-based semiconductor layer

GaN-based epitaxy (N type GaN-based semiconductor layer, active layer, P type GaN-based semiconductor layer)active layer

GaN-based epitaxy (N type GaN-based semiconductor layer, active layer, P type GaN-based semiconductor layer)P-type GaN-based semiconductor layer

Materials

Materials described outside the worked examples.

SiO₂ mask layer

SiO₂

Mask Layer On Sapphire Substrate

undoped GaN material layer

GaN

Process steps

Additional fabrication and treatment steps described in the patent.

Mocvd Growth

Step 1

Process details

description:Growing undoped GaN material layer and GaN-based epitaxy in sequence on sapphire substrate having two-dimensional photonic crystals using MOCVD process

Materials:GaNGaN-based epitaxy (N type GaN-based semiconductor layer, active layer, P type GaN-based semiconductor layer)

Why these are connected

Related documents with shared materials, methods, properties, or citations.

METHOD FOR MANUFACTURING GAN-BASED FILM LED | Matter42 Literature