Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold

Evangelos Dimopoulos; Aurimas Sakanas; Andrey Marchevsky; Meng Xiong; Yi Yu; Elizaveta Semenova; Jesper Mørk; Kresten Yvind

doi:10.1063/1.5027771

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputed Raman

Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold

Evangelos Dimopoulos, Aurimas Sakanas, Andrey Marchevsky, Meng Xiong et al.

arXiv·2022·10.1063/1.5027771·arXiv:2207.02931

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Directly bonded InP-based photonic crystal nanolaser on Si with buried heterostructure active region and lateral p-i-n junction; representative electrically driven device studied for threshold and thermal behavior.

13 preparations1 characterization2 properties2 figures

ExperimentalInPStudied MaterialInGaAsStudied MaterialInGaAsPStudied MaterialInAlGaAsStudied Material

Device variant with one quantum well used for thermal-property comparison.

13 preparations

ExperimentalInPStudied MaterialInGaAsStudied MaterialInGaAsPStudied MaterialInAlGaAsStudied Material

Device variant with three quantum wells used for thermal-property comparison.

13 preparations

ExperimentalInPStudied MaterialInGaAsStudied MaterialInGaAsPStudied MaterialInAlGaAsStudied Material

Optimized L₃ photonic crystal cavity used in the FDTD mode/Q-factor analysis.

2 properties

SimulatedInPStudied Material

Materials

InP

Studied Material

studied material

InGaAs

Studied Material

studied material

InGaAsP

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Fet Threshold Voltage	threshold current	10.2uA	InP InGaAs InGaAsP InAlGaAs	Directly bonded InP-based photonic crystal nanolaser on Si w	—
Optical Band Gap	emission wavelength	1540nm	InP InGaAs InGaAsP InAlGaAs	Directly bonded InP-based photonic crystal nanolaser on Si w	—
Other	Q-factor	5000dimensionless	InP	Optimized L₃ photonic crystal cavity used in the FDTD mode/Q	—
Other	Q-factor	1100000dimensionless	InP	Optimized L₃ photonic crystal cavity used in the FDTD mode/Q	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Threshold Voltage	threshold current	10.2uA	InP InGaAs InGaAsP InAlGaAs	Directly bonded InP-based photonic crystal nanolaser on Si w	—
Optical Band Gap	emission wavelength	1540nm	InP InGaAs InGaAsP InAlGaAs	Directly bonded InP-based photonic crystal nanolaser on Si w	—
Other	Q-factor	5000dimensionless	InP	Optimized L₃ photonic crystal cavity used in the FDTD mode/Q	—
Other	Q-factor	1100000dimensionless	InP	Optimized L₃ photonic crystal cavity used in the FDTD mode/Q	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Threshold Voltage	threshold current	10.2uA	InP InGaAs InGaAsP InAlGaAs	Directly bonded InP-based photonic crystal nanolaser on Si w	—
Optical Band Gap	emission wavelength	1540nm	InP InGaAs InGaAsP InAlGaAs	Directly bonded InP-based photonic crystal nanolaser on Si w	—
Other	Q-factor	5000dimensionless	InP	Optimized L₃ photonic crystal cavity used in the FDTD mode/Q	—
Other	Q-factor	1100000dimensionless	InP	Optimized L₃ photonic crystal cavity used in the FDTD mode/Q	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Threshold Voltage	threshold current	10.2uA	InP InGaAs InGaAsP InAlGaAs	Directly bonded InP-based photonic crystal nanolaser on Si w	—
Optical Band Gap	emission wavelength	1540nm	InP InGaAs InGaAsP InAlGaAs	Directly bonded InP-based photonic crystal nanolaser on Si w	—
Other	Q-factor	5000dimensionless	InP	Optimized L₃ photonic crystal cavity used in the FDTD mode/Q	—
Other	Q-factor	1100000dimensionless	InP	Optimized L₃ photonic crystal cavity used in the FDTD mode/Q	—

Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold

Samples

Directly bonded InP-based photonic crystal nanolaser on Si with buried heterostructure active region and lateral p-i-n junction; representative electrically driven device studied for threshold and thermal behavior.

Device variant with one quantum well used for thermal-property comparison.

Device variant with three quantum wells used for thermal-property comparison.

Optimized L₃ photonic crystal cavity used in the FDTD mode/Q-factor analysis.

Materials

Why these are connected

Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold

Samples

Directly bonded InP-based photonic crystal nanolaser on Si with buried heterostructure active region and lateral p-i-n junction; representative electrically driven device studied for threshold and thermal behavior.

Device variant with one quantum well used for thermal-property comparison.

Device variant with three quantum wells used for thermal-property comparison.

Optimized L₃ photonic crystal cavity used in the FDTD mode/Q-factor analysis.

Materials

Why these are connected

Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold

Samples

Directly bonded InP-based photonic crystal nanolaser on Si with buried heterostructure active region and lateral p-i-n junction; representative electrically driven device studied for threshold and thermal behavior.

Device variant with one quantum well used for thermal-property comparison.

Device variant with three quantum wells used for thermal-property comparison.

Optimized L₃ photonic crystal cavity used in the FDTD mode/Q-factor analysis.

Materials

Why these are connected

Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold

Samples

Directly bonded InP-based photonic crystal nanolaser on Si with buried heterostructure active region and lateral p-i-n junction; representative electrically driven device studied for threshold and thermal behavior.

Device variant with one quantum well used for thermal-property comparison.

Device variant with three quantum wells used for thermal-property comparison.

Optimized L₃ photonic crystal cavity used in the FDTD mode/Q-factor analysis.

Materials

Why these are connected

Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold

Samples

Directly bonded InP-based photonic crystal nanolaser on Si with buried heterostructure active region and lateral p-i-n junction; representative electrically driven device studied for threshold and thermal behavior.

Device variant with one quantum well used for thermal-property comparison.

Device variant with three quantum wells used for thermal-property comparison.

Optimized L₃ photonic crystal cavity used in the FDTD mode/Q-factor analysis.

Materials

Why these are connected

Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold

Samples

Directly bonded InP-based photonic crystal nanolaser on Si with buried heterostructure active region and lateral p-i-n junction; representative electrically driven device studied for threshold and thermal behavior.

Device variant with one quantum well used for thermal-property comparison.

Device variant with three quantum wells used for thermal-property comparison.

Optimized L₃ photonic crystal cavity used in the FDTD mode/Q-factor analysis.

Materials

Why these are connected

Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold

Samples

Directly bonded InP-based photonic crystal nanolaser on Si with buried heterostructure active region and lateral p-i-n junction; representative electrically driven device studied for threshold and thermal behavior.

Device variant with one quantum well used for thermal-property comparison.

Device variant with three quantum wells used for thermal-property comparison.

Optimized L₃ photonic crystal cavity used in the FDTD mode/Q-factor analysis.

Materials

Why these are connected

Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold

Samples

Directly bonded InP-based photonic crystal nanolaser on Si with buried heterostructure active region and lateral p-i-n junction; representative electrically driven device studied for threshold and thermal behavior.

Device variant with one quantum well used for thermal-property comparison.

Device variant with three quantum wells used for thermal-property comparison.

Optimized L₃ photonic crystal cavity used in the FDTD mode/Q-factor analysis.

Materials

Why these are connected

Growth

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Growth

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