FIG. 1 is a top plan view of an LED according to an exemplary embodiment. 5 [0009]

FIG. 2. DETAILED DESCRIPTION [00013] Embodiments of the present disclosure will now be described in detail below, with reference to the accompanying drawing. …

FIG. 3 is a photo of an N-face GaN etched by alkaline solution. [00011] FIG s. 4-9 are views showing different steps of a process of a first method for …

FIG. 4, the first step is to provide the substrate 10. The substrate 10 can be made of a material selected from a group consisting of Si, SiC, and 10 sapphire, …

FIG. 5, the second step is to form the first n-type GaN layer 20, the connecting layer 30, the second n-type GaN layer 40, the light emitting layer 50, the …

FIG. 6, the third step is to form a number of cutting channels 102 on the semiconductor layer 101 to divide the semiconductor layer 101 into a number of light …

FIG. 7, the fourth step is to form the p-type electrode 80 on the transparent conductive layer 70 of each light emitting unit 103, and to form the n-type …

FIG. 8, the fifth step is to use alkaline solution to etch away opposite lateral ends of the connecting layer 30 of each LED unit 103 to expose opposite end …

FIG. 9, the sixth step is to separate the LED units 103 along the cutting channels 102 to obtain a number of LEDs 100. [00028] It is understood, in other …

FIG. 10, a second method for manufacturing the LED 100 Page 8 of 12 according to the exemplary embodiment is shown. The second method is similar to the first …

FIG. 1 is a top plan view of an LED according to an exemplary embodiment. 5 [0009]

FIG. 2. DETAILED DESCRIPTION [00013] Embodiments of the present disclosure will now be described in detail below, with reference to the accompanying drawing. …

FIG. 3 is a photo of an N-face GaN etched by alkaline solution. [00011] FIG s. 4-9 are views showing different steps of a process of a first method for …

FIG. 4, the first step is to provide the substrate 10. The substrate 10 can be made of a material selected from a group consisting of Si, SiC, and 10 sapphire, …

FIG. 5, the second step is to form the first n-type GaN layer 20, the connecting layer 30, the second n-type GaN layer 40, the light emitting layer 50, the …

FIG. 6, the third step is to form a number of cutting channels 102 on the semiconductor layer 101 to divide the semiconductor layer 101 into a number of light …

FIG. 7, the fourth step is to form the p-type electrode 80 on the transparent conductive layer 70 of each light emitting unit 103, and to form the n-type …

FIG. 8, the fifth step is to use alkaline solution to etch away opposite lateral ends of the connecting layer 30 of each LED unit 103 to expose opposite end …

FIG. 9, the sixth step is to separate the LED units 103 along the cutting channels 102 to obtain a number of LEDs 100. [00028] It is understood, in other …

FIG. 10, a second method for manufacturing the LED 100 Page 8 of 12 according to the exemplary embodiment is shown. The second method is similar to the first …

FIG. 1 is a top plan view of an LED according to an exemplary embodiment. 5 [0009]

FIG. 2. DETAILED DESCRIPTION [00013] Embodiments of the present disclosure will now be described in detail below, with reference to the accompanying drawing. …

FIG. 3 is a photo of an N-face GaN etched by alkaline solution. [00011] FIG s. 4-9 are views showing different steps of a process of a first method for …

FIG. 4, the first step is to provide the substrate 10. The substrate 10 can be made of a material selected from a group consisting of Si, SiC, and 10 sapphire, …

FIG. 5, the second step is to form the first n-type GaN layer 20, the connecting layer 30, the second n-type GaN layer 40, the light emitting layer 50, the …

FIG. 6, the third step is to form a number of cutting channels 102 on the semiconductor layer 101 to divide the semiconductor layer 101 into a number of light …

FIG. 7, the fourth step is to form the p-type electrode 80 on the transparent conductive layer 70 of each light emitting unit 103, and to form the n-type …

FIG. 8, the fifth step is to use alkaline solution to etch away opposite lateral ends of the connecting layer 30 of each LED unit 103 to expose opposite end …

FIG. 9, the sixth step is to separate the LED units 103 along the cutting channels 102 to obtain a number of LEDs 100. [00028] It is understood, in other …

FIG. 10, a second method for manufacturing the LED 100 Page 8 of 12 according to the exemplary embodiment is shown. The second method is similar to the first …

FIG. 1 is a top plan view of an LED according to an exemplary embodiment. 5 [0009]

FIG. 2. DETAILED DESCRIPTION [00013] Embodiments of the present disclosure will now be described in detail below, with reference to the accompanying drawing. …

FIG. 3 is a photo of an N-face GaN etched by alkaline solution. [00011] FIG s. 4-9 are views showing different steps of a process of a first method for …

FIG. 4, the first step is to provide the substrate 10. The substrate 10 can be made of a material selected from a group consisting of Si, SiC, and 10 sapphire, …

FIG. 5, the second step is to form the first n-type GaN layer 20, the connecting layer 30, the second n-type GaN layer 40, the light emitting layer 50, the …

FIG. 6, the third step is to form a number of cutting channels 102 on the semiconductor layer 101 to divide the semiconductor layer 101 into a number of light …

FIG. 7, the fourth step is to form the p-type electrode 80 on the transparent conductive layer 70 of each light emitting unit 103, and to form the n-type …

FIG. 8, the fifth step is to use alkaline solution to etch away opposite lateral ends of the connecting layer 30 of each LED unit 103 to expose opposite end …

FIG. 9, the sixth step is to separate the LED units 103 along the cutting channels 102 to obtain a number of LEDs 100. [00028] It is understood, in other …

FIG. 10, a second method for manufacturing the LED 100 Page 8 of 12 according to the exemplary embodiment is shown. The second method is similar to the first …