Patent
US 9,337,406GaN-based Light Emitting Diode with Current Spreading Structure
LINGFENG YIN
US
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Atlas literature
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US 9,337,406Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a three-dimensional schematic diagram of a GaN-based LED with a current spreading structure according to some embodiments. [0018]
FIG. 2 is a cross-sectional view of the LED of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A GaN-based LED comprising: a substrate; a light-emitting epitaxial layer over the substrate; and a current spreading structure over the light-emitting epitaxial layer and including: a transparent electrode spreading bar; and a metal electrode spreading bar, wherein a side wall of the metal electrode spreading bar is attached to a side wall of the transparent electrode spreading bar, and wherein the metal electrode spreading bar is narrower than the transparent electrode spreading bar to reduce tilting or wrappinq and electrode shading while realizinq current spreading.
The LED of Claim 1, further comprising a transparent conducting layer over the light-emitting epitaxial layer, wherein the current spreading structure is disposed over the transparent conducting layer.
The LED of Claim [[2]] 1, wherein the metal electrode spreading bar is at a single-side wall or dual-side wall of the transparent electrode spreading bar, and has a thickness about the same as that of the transparent electrode spreading bar and a width of about 0.3 pm.
A lighting system comprising a plurality of GaN- based LEDs, each LED comprising: a substrate; a light-emitting epitaxial layer over the substrate; and a current spreading structure over the light-emitting epitaxial layer and including: a transparent electrode spreading bar; and a metal electrode spreading bar, wherein a side wall of the metal electrode spreading bar is attached to a side wall of the transparent electrode spreading bar, and wherein the metal electrode spreading bar is narrower than the transparent electrode spreading bar to reduce tilting or wrappinq and electrode shading while realizinq current spreading.
The system of Claim 11, wherein each LED further comprises a transparent conducting layer over the light-emitting epitaxial layer, and 3 U.S. Patent Application Serial No. 14/641,383 Attorney Docket No.: 72626.0026 wherein the current spreading structure is disposed over the transparent conducting layer.
The system of Claim 11, wherein the metal electrode spreading bar is at a single-side wall or dual-side wall of the transparent electrode spreading bar, and has a thickness about the same as that of the transparent electrode spreading bar.
The system of Claim 11, wherein the substrate comprises at least one of sapphire (A l 2 0 3), SiC, Si, or GaN.
The system of Claim 11, wherein the transparent electrode spreading bar comprises at least one of ITO, ZnO, CTO, In O, In-doped ZnO, Al -doped ZnO, or Ga-doped ZnO.
The system of Claim 11, wherein the metal spreading bar comprises at least one of Au, Ni/Au alloy, Cr/Au alloy, or Cr/Pt/Au alloy, and has a width of about 0.3 pm.
The system of Claim 11, wherein the transparent electrode spreading bar has a thickness of about 0.001-2 pm.
The system of Claim 11, wherein the metal electrode spreading bar has a thickness of about 0.001-2 pm, and a width of about 0.001-0.5 pm.
A method of fabricating a Ga N- based LED, comprising: growing a light-emitting epitaxial layer over a SVG 14641383.01-25-2016.IJU₆X₂₁₆PXXIFW3.CLM.3.27.1526.2806.1738.2850.svg 0.147 0.707 Chemistry Black and white forming a transparent conducting layer over a surface of the 4 U.S. Patent Application Serial No. 14/641,383 Attorney Docket No.: 72626.0026 light-emitting epitaxial layer; and growing a current spreading structure over the transparent conducting layer, the current spreading structure including: a transparent electrode spreading bar; and a metal electrode spreading bar, wherein a side wall of the metal electrode spreading bar is attached to a side wall of the transparent electrode spreading bar, and wherein the metal electrode spreading bar is narrower than the transparent electrode spreading bar to reduce tilting or wrappinq and electrode shading while realizinq current spreading.
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials1 process step
A GaN-based LED with current spreading structure comprising a sapphire substrate, a light-emitting epitaxial layer (N-GaN/light-emitting layer/P-GaN), an ITO transparent conducting layer, and a current spreading structure with an ITO transparent electrode spreading bar (fabricated by reactive magnetron sputtering and lift-off, ~1 µm thick) and a Cr/Au metal electrode spreading bar (~0.3 µm wide, ~1 µm thick) attached to the single-side wall of the transparent electrode spreading bar. P and N electrodes are also present.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED with current spreading structure
Materials described outside the worked examples.
Cr/Au metal electrode spreading bar
sapphire substrate
Al₂O₃
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,337,406Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a three-dimensional schematic diagram of a GaN-based LED with a current spreading structure according to some embodiments. [0018]
FIG. 2 is a cross-sectional view of the LED of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A GaN-based LED comprising: a substrate; a light-emitting epitaxial layer over the substrate; and a current spreading structure over the light-emitting epitaxial layer and including: a transparent electrode spreading bar; and a metal electrode spreading bar, wherein a side wall of the metal electrode spreading bar is attached to a side wall of the transparent electrode spreading bar, and wherein the metal electrode spreading bar is narrower than the transparent electrode spreading bar to reduce tilting or wrappinq and electrode shading while realizinq current spreading.
The LED of Claim 1, further comprising a transparent conducting layer over the light-emitting epitaxial layer, wherein the current spreading structure is disposed over the transparent conducting layer.
The LED of Claim [[2]] 1, wherein the metal electrode spreading bar is at a single-side wall or dual-side wall of the transparent electrode spreading bar, and has a thickness about the same as that of the transparent electrode spreading bar and a width of about 0.3 pm.
A lighting system comprising a plurality of GaN- based LEDs, each LED comprising: a substrate; a light-emitting epitaxial layer over the substrate; and a current spreading structure over the light-emitting epitaxial layer and including: a transparent electrode spreading bar; and a metal electrode spreading bar, wherein a side wall of the metal electrode spreading bar is attached to a side wall of the transparent electrode spreading bar, and wherein the metal electrode spreading bar is narrower than the transparent electrode spreading bar to reduce tilting or wrappinq and electrode shading while realizinq current spreading.
The system of Claim 11, wherein each LED further comprises a transparent conducting layer over the light-emitting epitaxial layer, and 3 U.S. Patent Application Serial No. 14/641,383 Attorney Docket No.: 72626.0026 wherein the current spreading structure is disposed over the transparent conducting layer.
The system of Claim 11, wherein the metal electrode spreading bar is at a single-side wall or dual-side wall of the transparent electrode spreading bar, and has a thickness about the same as that of the transparent electrode spreading bar.
The system of Claim 11, wherein the substrate comprises at least one of sapphire (A l 2 0 3), SiC, Si, or GaN.
The system of Claim 11, wherein the transparent electrode spreading bar comprises at least one of ITO, ZnO, CTO, In O, In-doped ZnO, Al -doped ZnO, or Ga-doped ZnO.
The system of Claim 11, wherein the metal spreading bar comprises at least one of Au, Ni/Au alloy, Cr/Au alloy, or Cr/Pt/Au alloy, and has a width of about 0.3 pm.
The system of Claim 11, wherein the transparent electrode spreading bar has a thickness of about 0.001-2 pm.
The system of Claim 11, wherein the metal electrode spreading bar has a thickness of about 0.001-2 pm, and a width of about 0.001-0.5 pm.
A method of fabricating a Ga N- based LED, comprising: growing a light-emitting epitaxial layer over a SVG 14641383.01-25-2016.IJU₆X₂₁₆PXXIFW3.CLM.3.27.1526.2806.1738.2850.svg 0.147 0.707 Chemistry Black and white forming a transparent conducting layer over a surface of the 4 U.S. Patent Application Serial No. 14/641,383 Attorney Docket No.: 72626.0026 light-emitting epitaxial layer; and growing a current spreading structure over the transparent conducting layer, the current spreading structure including: a transparent electrode spreading bar; and a metal electrode spreading bar, wherein a side wall of the metal electrode spreading bar is attached to a side wall of the transparent electrode spreading bar, and wherein the metal electrode spreading bar is narrower than the transparent electrode spreading bar to reduce tilting or wrappinq and electrode shading while realizinq current spreading.
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials1 process step
A GaN-based LED with current spreading structure comprising a sapphire substrate, a light-emitting epitaxial layer (N-GaN/light-emitting layer/P-GaN), an ITO transparent conducting layer, and a current spreading structure with an ITO transparent electrode spreading bar (fabricated by reactive magnetron sputtering and lift-off, ~1 µm thick) and a Cr/Au metal electrode spreading bar (~0.3 µm wide, ~1 µm thick) attached to the single-side wall of the transparent electrode spreading bar. P and N electrodes are also present.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED with current spreading structure
Materials described outside the worked examples.
Cr/Au metal electrode spreading bar
sapphire substrate
Al₂O₃
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,337,406Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a three-dimensional schematic diagram of a GaN-based LED with a current spreading structure according to some embodiments. [0018]
FIG. 2 is a cross-sectional view of the LED of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A GaN-based LED comprising: a substrate; a light-emitting epitaxial layer over the substrate; and a current spreading structure over the light-emitting epitaxial layer and including: a transparent electrode spreading bar; and a metal electrode spreading bar, wherein a side wall of the metal electrode spreading bar is attached to a side wall of the transparent electrode spreading bar, and wherein the metal electrode spreading bar is narrower than the transparent electrode spreading bar to reduce tilting or wrappinq and electrode shading while realizinq current spreading.
The LED of Claim 1, further comprising a transparent conducting layer over the light-emitting epitaxial layer, wherein the current spreading structure is disposed over the transparent conducting layer.
The LED of Claim [[2]] 1, wherein the metal electrode spreading bar is at a single-side wall or dual-side wall of the transparent electrode spreading bar, and has a thickness about the same as that of the transparent electrode spreading bar and a width of about 0.3 pm.
A lighting system comprising a plurality of GaN- based LEDs, each LED comprising: a substrate; a light-emitting epitaxial layer over the substrate; and a current spreading structure over the light-emitting epitaxial layer and including: a transparent electrode spreading bar; and a metal electrode spreading bar, wherein a side wall of the metal electrode spreading bar is attached to a side wall of the transparent electrode spreading bar, and wherein the metal electrode spreading bar is narrower than the transparent electrode spreading bar to reduce tilting or wrappinq and electrode shading while realizinq current spreading.
The system of Claim 11, wherein each LED further comprises a transparent conducting layer over the light-emitting epitaxial layer, and 3 U.S. Patent Application Serial No. 14/641,383 Attorney Docket No.: 72626.0026 wherein the current spreading structure is disposed over the transparent conducting layer.
The system of Claim 11, wherein the metal electrode spreading bar is at a single-side wall or dual-side wall of the transparent electrode spreading bar, and has a thickness about the same as that of the transparent electrode spreading bar.
The system of Claim 11, wherein the substrate comprises at least one of sapphire (A l 2 0 3), SiC, Si, or GaN.
The system of Claim 11, wherein the transparent electrode spreading bar comprises at least one of ITO, ZnO, CTO, In O, In-doped ZnO, Al -doped ZnO, or Ga-doped ZnO.
The system of Claim 11, wherein the metal spreading bar comprises at least one of Au, Ni/Au alloy, Cr/Au alloy, or Cr/Pt/Au alloy, and has a width of about 0.3 pm.
The system of Claim 11, wherein the transparent electrode spreading bar has a thickness of about 0.001-2 pm.
The system of Claim 11, wherein the metal electrode spreading bar has a thickness of about 0.001-2 pm, and a width of about 0.001-0.5 pm.
A method of fabricating a Ga N- based LED, comprising: growing a light-emitting epitaxial layer over a SVG 14641383.01-25-2016.IJU₆X₂₁₆PXXIFW3.CLM.3.27.1526.2806.1738.2850.svg 0.147 0.707 Chemistry Black and white forming a transparent conducting layer over a surface of the 4 U.S. Patent Application Serial No. 14/641,383 Attorney Docket No.: 72626.0026 light-emitting epitaxial layer; and growing a current spreading structure over the transparent conducting layer, the current spreading structure including: a transparent electrode spreading bar; and a metal electrode spreading bar, wherein a side wall of the metal electrode spreading bar is attached to a side wall of the transparent electrode spreading bar, and wherein the metal electrode spreading bar is narrower than the transparent electrode spreading bar to reduce tilting or wrappinq and electrode shading while realizinq current spreading.
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials1 process step
A GaN-based LED with current spreading structure comprising a sapphire substrate, a light-emitting epitaxial layer (N-GaN/light-emitting layer/P-GaN), an ITO transparent conducting layer, and a current spreading structure with an ITO transparent electrode spreading bar (fabricated by reactive magnetron sputtering and lift-off, ~1 µm thick) and a Cr/Au metal electrode spreading bar (~0.3 µm wide, ~1 µm thick) attached to the single-side wall of the transparent electrode spreading bar. P and N electrodes are also present.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED with current spreading structure
Materials described outside the worked examples.
Cr/Au metal electrode spreading bar
sapphire substrate
Al₂O₃
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,337,406Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a three-dimensional schematic diagram of a GaN-based LED with a current spreading structure according to some embodiments. [0018]
FIG. 2 is a cross-sectional view of the LED of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A GaN-based LED comprising: a substrate; a light-emitting epitaxial layer over the substrate; and a current spreading structure over the light-emitting epitaxial layer and including: a transparent electrode spreading bar; and a metal electrode spreading bar, wherein a side wall of the metal electrode spreading bar is attached to a side wall of the transparent electrode spreading bar, and wherein the metal electrode spreading bar is narrower than the transparent electrode spreading bar to reduce tilting or wrappinq and electrode shading while realizinq current spreading.
The LED of Claim 1, further comprising a transparent conducting layer over the light-emitting epitaxial layer, wherein the current spreading structure is disposed over the transparent conducting layer.
The LED of Claim [[2]] 1, wherein the metal electrode spreading bar is at a single-side wall or dual-side wall of the transparent electrode spreading bar, and has a thickness about the same as that of the transparent electrode spreading bar and a width of about 0.3 pm.
A lighting system comprising a plurality of GaN- based LEDs, each LED comprising: a substrate; a light-emitting epitaxial layer over the substrate; and a current spreading structure over the light-emitting epitaxial layer and including: a transparent electrode spreading bar; and a metal electrode spreading bar, wherein a side wall of the metal electrode spreading bar is attached to a side wall of the transparent electrode spreading bar, and wherein the metal electrode spreading bar is narrower than the transparent electrode spreading bar to reduce tilting or wrappinq and electrode shading while realizinq current spreading.
The system of Claim 11, wherein each LED further comprises a transparent conducting layer over the light-emitting epitaxial layer, and 3 U.S. Patent Application Serial No. 14/641,383 Attorney Docket No.: 72626.0026 wherein the current spreading structure is disposed over the transparent conducting layer.
The system of Claim 11, wherein the metal electrode spreading bar is at a single-side wall or dual-side wall of the transparent electrode spreading bar, and has a thickness about the same as that of the transparent electrode spreading bar.
The system of Claim 11, wherein the substrate comprises at least one of sapphire (A l 2 0 3), SiC, Si, or GaN.
The system of Claim 11, wherein the transparent electrode spreading bar comprises at least one of ITO, ZnO, CTO, In O, In-doped ZnO, Al -doped ZnO, or Ga-doped ZnO.
The system of Claim 11, wherein the metal spreading bar comprises at least one of Au, Ni/Au alloy, Cr/Au alloy, or Cr/Pt/Au alloy, and has a width of about 0.3 pm.
The system of Claim 11, wherein the transparent electrode spreading bar has a thickness of about 0.001-2 pm.
The system of Claim 11, wherein the metal electrode spreading bar has a thickness of about 0.001-2 pm, and a width of about 0.001-0.5 pm.
A method of fabricating a Ga N- based LED, comprising: growing a light-emitting epitaxial layer over a SVG 14641383.01-25-2016.IJU₆X₂₁₆PXXIFW3.CLM.3.27.1526.2806.1738.2850.svg 0.147 0.707 Chemistry Black and white forming a transparent conducting layer over a surface of the 4 U.S. Patent Application Serial No. 14/641,383 Attorney Docket No.: 72626.0026 light-emitting epitaxial layer; and growing a current spreading structure over the transparent conducting layer, the current spreading structure including: a transparent electrode spreading bar; and a metal electrode spreading bar, wherein a side wall of the metal electrode spreading bar is attached to a side wall of the transparent electrode spreading bar, and wherein the metal electrode spreading bar is narrower than the transparent electrode spreading bar to reduce tilting or wrappinq and electrode shading while realizinq current spreading.
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials1 process step
A GaN-based LED with current spreading structure comprising a sapphire substrate, a light-emitting epitaxial layer (N-GaN/light-emitting layer/P-GaN), an ITO transparent conducting layer, and a current spreading structure with an ITO transparent electrode spreading bar (fabricated by reactive magnetron sputtering and lift-off, ~1 µm thick) and a Cr/Au metal electrode spreading bar (~0.3 µm wide, ~1 µm thick) attached to the single-side wall of the transparent electrode spreading bar. P and N electrodes are also present.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED with current spreading structure
Materials described outside the worked examples.
Cr/Au metal electrode spreading bar
sapphire substrate
Al₂O₃
Related documents with shared materials, methods, properties, or citations.
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