Patent
US 8,390,006LIGHT EMITTING DEVICE, METHOD OF FABRICATING THE LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM
Dae Sung KANG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,390,006Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A light emitting device, comprising: a reflective layer comprising a first GaN-based semiconductor layer having a first refractive index, a second GaN-based semiconductor layer having a second refractive index less than the first refractive index, and a third GaN-based semiconductor layer having a third refractive index less than the second refractive index; and a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the reflective layer, wherein the first GaN-based semiconductor layer and the second GaN-based semiconductor layer are alternately stacked in a vertical direction in a first region of the reflective layer, and the second GaN-based semiconductor layer and the third GaN-based semiconductor layer are alternately stacked in the vertical direction in a second region of the reflective layer, [[and]] wherein the reflective layer comprises a plurality of layers including at least two layers from the first GaN-based semiconductor layer, the second GaN-based semiconductor layer and the third GaN-based semiconductor layer, and wherein at least two of the first GaN-based semiconductor la y er, the second GaN-based semiconductor la y er, and the third GaN-based semiconductor layer are alternately disposed in a horizontal direction perpendicular to the vertical direction.
The light emitting device of claim 1, wherein the first GaN- based semiconductor layer and the third GaN-based semiconductor layer are alternately disposed in the horizontal direction in a third region of the reflective layer, and the second GaN-based semiconductor layer is disposed in a fourth region of the reflective layer.
The light emitting device of claim 1, wherein the first GaN- based semiconductor layer and the second GaN-based semiconductor layer are alternately disposed in the horizontal direction in a third region of the reflective layer, and the second GaN- based semiconductor layer and the third GaN-based semiconductor layer are alternately disposed horizontally in a fourth region of the reflective layer.
The light emitting device of claim 1, wherein the first GaN-based semiconductor layer comprises an InGaN layer, the second GaN-based semiconductor layer comprises a GaN layer, and the third GaN-based semiconductor layer comprises an AlGaN layer.
The light emitting device of claim 1, further comprising a nitride semiconductor layer and a substrate, which are disposed under the reflective layer.
The light emitting device of claim 1, further comprising a first electrode layer on the first conductive type semiconductor layer and a second electrode layer on the second conductive type semiconductor layer.
The light emitting device of claim 1, wherein each of the first GaN-based semiconductor layer, the second GaN-based semiconductor layer, and the third GaN-based semiconductor layer has a thickness of about 40 n m to about 60 nm.
The light emitting device of claim 1, wherein each of the first GaN-based semiconductor layer, the second GaN-based semiconductor layer, and the third GaN- BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/ME M/nbt Application No.: 12/948,423 Docket No.: 3449-1554PUS 1 Reply to Office Action of Page 5 of 10 based semiconductor layer has a width of about 40 nm to about 50 pm.
A light emitting device, comprising: a reflective layer comprising a first GaN-based semiconductor layer having a first refractive index, a second GaN-based semiconductor layer having a second refractive index less than the first refractive index, and a third GaN-based semiconductor layer having a third refractive index less than the second refractive index; and a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the reflective layer, wherein the first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer are stacked in a vertical direction, and wherein the first GaN-based semiconductor layer and the second GaN-based semiconductor layer are alternately disposed in a horizontal direction perpendicular to the vertical direction in a third region of the reflective layer, and the second GaN-based semiconductor layer and the third GaN-based semiconductor layer are alternately disposed in the horizontal direction perpendicular to the vertical direction in a fourth region of the reflective layer.
The light emitting device of claim 13, wherein the first GaN-based semiconductor layer and the second GaN-based semiconductor layer are disposed along the horizontal direction in a lattice shape, and the second GaN-based semiconductor layer and the BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/MEM/nbt Application No.: 12/948,423 Docket No.: 3449-1 5 54PUS 1 Reply to Office Action of Page 6 of 10 third GaN-based semiconductor layer are disposed along the horizontal direction in the lattice shape.
The light emitting device of claim 13, wherein the first GaN-based semiconductor layer comprises an InGaN layer, the second GaN-based semiconductor layer comprises a GaN layer, and the third GaN-based semiconductor layer comprises an AlGaN layer.
The light emitting device of claim 13, further comprising a nitride semiconductor layer and a substrate, which are disposed under the reflective layer.
The light emitting device of claim 13, further comprising a first electrode layer on the first conductive type semiconductor layer and a second electrode layer on the second conductive type semiconductor layer.
The light emitting device of claim 13, wherein each of the first GaN-based semiconductor layer, the second GaN-based semiconductor layer, and the third GaN-based semiconductor layer has a thickness of about 40 nm to about 60 nm, and wherein each of the first GaN-based semiconductor layer, the second GaN-based semiconductor layer, and the third GaN-based semiconductor layer has a width of about 40 nm to about 50 gm.
canceled
A light emitting device, comprising: a reflective layer comprising a first GaN-based semiconductor layer having a first refractive index, a second GaN-based semiconductor layer having a second refractive index less than the first refractive index, and a third GaN-based semiconductor layer having a third refractive index less than the second refractive index; and a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the reflective layer, wherein the first GaN-based semiconductor layer and the second GaN-based semiconductor layer are alternately stacked in a vertical direction in a first region of the reflective layer, and the second GaN-based semiconductor layer and the third GaN-based semiconductor layer are alternately stacked in the vertical direction in a second region of the reflective layer, and wherein the first GaN-based semiconductor layer and the second GaN-based semiconductor layer are alternately disposed in a horizontal direction in a third region of the reflective layer, and the second GaN-based semiconductor layer and the third GaN-based semiconductor layer are alternately disposed horizontally in a fourth region of the reflective layer.
The light emitting device of claim 20, wherein the first GaN- based semiconductor layer and the second GaN-based semiconductor layer are horizontally BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/MEM/nbt Application No.: 12/948,423 Docket No.: 3449-15 5 4PUS 1 Reply to Office Action of Page 8 of 10 disposed in a lattice shape, and the second GaN-based semiconductor layer and the third GaN- based semiconductor layer are horizontally disposed in the lattice shape.
Layer stacks claimed or described, ordered top of device to substrate.
light emitting device (LED) with GaN-based DBR reflective layer
Materials described outside the worked examples.
first GaN-based semiconductor layer (InGaN)
InGaN
second GaN-based semiconductor layer (GaN)
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
refractive index of InGaN (first GaN-based semiconductor layer) | 2.3 | InGaN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,390,006Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A light emitting device, comprising: a reflective layer comprising a first GaN-based semiconductor layer having a first refractive index, a second GaN-based semiconductor layer having a second refractive index less than the first refractive index, and a third GaN-based semiconductor layer having a third refractive index less than the second refractive index; and a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the reflective layer, wherein the first GaN-based semiconductor layer and the second GaN-based semiconductor layer are alternately stacked in a vertical direction in a first region of the reflective layer, and the second GaN-based semiconductor layer and the third GaN-based semiconductor layer are alternately stacked in the vertical direction in a second region of the reflective layer, [[and]] wherein the reflective layer comprises a plurality of layers including at least two layers from the first GaN-based semiconductor layer, the second GaN-based semiconductor layer and the third GaN-based semiconductor layer, and wherein at least two of the first GaN-based semiconductor la y er, the second GaN-based semiconductor la y er, and the third GaN-based semiconductor layer are alternately disposed in a horizontal direction perpendicular to the vertical direction.
The light emitting device of claim 1, wherein the first GaN- based semiconductor layer and the third GaN-based semiconductor layer are alternately disposed in the horizontal direction in a third region of the reflective layer, and the second GaN-based semiconductor layer is disposed in a fourth region of the reflective layer.
The light emitting device of claim 1, wherein the first GaN- based semiconductor layer and the second GaN-based semiconductor layer are alternately disposed in the horizontal direction in a third region of the reflective layer, and the second GaN- based semiconductor layer and the third GaN-based semiconductor layer are alternately disposed horizontally in a fourth region of the reflective layer.
The light emitting device of claim 1, wherein the first GaN-based semiconductor layer comprises an InGaN layer, the second GaN-based semiconductor layer comprises a GaN layer, and the third GaN-based semiconductor layer comprises an AlGaN layer.
The light emitting device of claim 1, further comprising a nitride semiconductor layer and a substrate, which are disposed under the reflective layer.
The light emitting device of claim 1, further comprising a first electrode layer on the first conductive type semiconductor layer and a second electrode layer on the second conductive type semiconductor layer.
The light emitting device of claim 1, wherein each of the first GaN-based semiconductor layer, the second GaN-based semiconductor layer, and the third GaN-based semiconductor layer has a thickness of about 40 n m to about 60 nm.
The light emitting device of claim 1, wherein each of the first GaN-based semiconductor layer, the second GaN-based semiconductor layer, and the third GaN- BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/ME M/nbt Application No.: 12/948,423 Docket No.: 3449-1554PUS 1 Reply to Office Action of Page 5 of 10 based semiconductor layer has a width of about 40 nm to about 50 pm.
A light emitting device, comprising: a reflective layer comprising a first GaN-based semiconductor layer having a first refractive index, a second GaN-based semiconductor layer having a second refractive index less than the first refractive index, and a third GaN-based semiconductor layer having a third refractive index less than the second refractive index; and a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the reflective layer, wherein the first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer are stacked in a vertical direction, and wherein the first GaN-based semiconductor layer and the second GaN-based semiconductor layer are alternately disposed in a horizontal direction perpendicular to the vertical direction in a third region of the reflective layer, and the second GaN-based semiconductor layer and the third GaN-based semiconductor layer are alternately disposed in the horizontal direction perpendicular to the vertical direction in a fourth region of the reflective layer.
The light emitting device of claim 13, wherein the first GaN-based semiconductor layer and the second GaN-based semiconductor layer are disposed along the horizontal direction in a lattice shape, and the second GaN-based semiconductor layer and the BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/MEM/nbt Application No.: 12/948,423 Docket No.: 3449-1 5 54PUS 1 Reply to Office Action of Page 6 of 10 third GaN-based semiconductor layer are disposed along the horizontal direction in the lattice shape.
The light emitting device of claim 13, wherein the first GaN-based semiconductor layer comprises an InGaN layer, the second GaN-based semiconductor layer comprises a GaN layer, and the third GaN-based semiconductor layer comprises an AlGaN layer.
The light emitting device of claim 13, further comprising a nitride semiconductor layer and a substrate, which are disposed under the reflective layer.
The light emitting device of claim 13, further comprising a first electrode layer on the first conductive type semiconductor layer and a second electrode layer on the second conductive type semiconductor layer.
The light emitting device of claim 13, wherein each of the first GaN-based semiconductor layer, the second GaN-based semiconductor layer, and the third GaN-based semiconductor layer has a thickness of about 40 nm to about 60 nm, and wherein each of the first GaN-based semiconductor layer, the second GaN-based semiconductor layer, and the third GaN-based semiconductor layer has a width of about 40 nm to about 50 gm.
canceled
A light emitting device, comprising: a reflective layer comprising a first GaN-based semiconductor layer having a first refractive index, a second GaN-based semiconductor layer having a second refractive index less than the first refractive index, and a third GaN-based semiconductor layer having a third refractive index less than the second refractive index; and a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the reflective layer, wherein the first GaN-based semiconductor layer and the second GaN-based semiconductor layer are alternately stacked in a vertical direction in a first region of the reflective layer, and the second GaN-based semiconductor layer and the third GaN-based semiconductor layer are alternately stacked in the vertical direction in a second region of the reflective layer, and wherein the first GaN-based semiconductor layer and the second GaN-based semiconductor layer are alternately disposed in a horizontal direction in a third region of the reflective layer, and the second GaN-based semiconductor layer and the third GaN-based semiconductor layer are alternately disposed horizontally in a fourth region of the reflective layer.
The light emitting device of claim 20, wherein the first GaN- based semiconductor layer and the second GaN-based semiconductor layer are horizontally BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/MEM/nbt Application No.: 12/948,423 Docket No.: 3449-15 5 4PUS 1 Reply to Office Action of Page 8 of 10 disposed in a lattice shape, and the second GaN-based semiconductor layer and the third GaN- based semiconductor layer are horizontally disposed in the lattice shape.
Layer stacks claimed or described, ordered top of device to substrate.
light emitting device (LED) with GaN-based DBR reflective layer
Materials described outside the worked examples.
first GaN-based semiconductor layer (InGaN)
InGaN
second GaN-based semiconductor layer (GaN)
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
refractive index of InGaN (first GaN-based semiconductor layer) | 2.3 | InGaN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,390,006Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A light emitting device, comprising: a reflective layer comprising a first GaN-based semiconductor layer having a first refractive index, a second GaN-based semiconductor layer having a second refractive index less than the first refractive index, and a third GaN-based semiconductor layer having a third refractive index less than the second refractive index; and a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the reflective layer, wherein the first GaN-based semiconductor layer and the second GaN-based semiconductor layer are alternately stacked in a vertical direction in a first region of the reflective layer, and the second GaN-based semiconductor layer and the third GaN-based semiconductor layer are alternately stacked in the vertical direction in a second region of the reflective layer, [[and]] wherein the reflective layer comprises a plurality of layers including at least two layers from the first GaN-based semiconductor layer, the second GaN-based semiconductor layer and the third GaN-based semiconductor layer, and wherein at least two of the first GaN-based semiconductor la y er, the second GaN-based semiconductor la y er, and the third GaN-based semiconductor layer are alternately disposed in a horizontal direction perpendicular to the vertical direction.
The light emitting device of claim 1, wherein the first GaN- based semiconductor layer and the third GaN-based semiconductor layer are alternately disposed in the horizontal direction in a third region of the reflective layer, and the second GaN-based semiconductor layer is disposed in a fourth region of the reflective layer.
The light emitting device of claim 1, wherein the first GaN- based semiconductor layer and the second GaN-based semiconductor layer are alternately disposed in the horizontal direction in a third region of the reflective layer, and the second GaN- based semiconductor layer and the third GaN-based semiconductor layer are alternately disposed horizontally in a fourth region of the reflective layer.
The light emitting device of claim 1, wherein the first GaN-based semiconductor layer comprises an InGaN layer, the second GaN-based semiconductor layer comprises a GaN layer, and the third GaN-based semiconductor layer comprises an AlGaN layer.
The light emitting device of claim 1, further comprising a nitride semiconductor layer and a substrate, which are disposed under the reflective layer.
The light emitting device of claim 1, further comprising a first electrode layer on the first conductive type semiconductor layer and a second electrode layer on the second conductive type semiconductor layer.
The light emitting device of claim 1, wherein each of the first GaN-based semiconductor layer, the second GaN-based semiconductor layer, and the third GaN-based semiconductor layer has a thickness of about 40 n m to about 60 nm.
The light emitting device of claim 1, wherein each of the first GaN-based semiconductor layer, the second GaN-based semiconductor layer, and the third GaN- BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/ME M/nbt Application No.: 12/948,423 Docket No.: 3449-1554PUS 1 Reply to Office Action of Page 5 of 10 based semiconductor layer has a width of about 40 nm to about 50 pm.
A light emitting device, comprising: a reflective layer comprising a first GaN-based semiconductor layer having a first refractive index, a second GaN-based semiconductor layer having a second refractive index less than the first refractive index, and a third GaN-based semiconductor layer having a third refractive index less than the second refractive index; and a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the reflective layer, wherein the first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer are stacked in a vertical direction, and wherein the first GaN-based semiconductor layer and the second GaN-based semiconductor layer are alternately disposed in a horizontal direction perpendicular to the vertical direction in a third region of the reflective layer, and the second GaN-based semiconductor layer and the third GaN-based semiconductor layer are alternately disposed in the horizontal direction perpendicular to the vertical direction in a fourth region of the reflective layer.
The light emitting device of claim 13, wherein the first GaN-based semiconductor layer and the second GaN-based semiconductor layer are disposed along the horizontal direction in a lattice shape, and the second GaN-based semiconductor layer and the BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/MEM/nbt Application No.: 12/948,423 Docket No.: 3449-1 5 54PUS 1 Reply to Office Action of Page 6 of 10 third GaN-based semiconductor layer are disposed along the horizontal direction in the lattice shape.
The light emitting device of claim 13, wherein the first GaN-based semiconductor layer comprises an InGaN layer, the second GaN-based semiconductor layer comprises a GaN layer, and the third GaN-based semiconductor layer comprises an AlGaN layer.
The light emitting device of claim 13, further comprising a nitride semiconductor layer and a substrate, which are disposed under the reflective layer.
The light emitting device of claim 13, further comprising a first electrode layer on the first conductive type semiconductor layer and a second electrode layer on the second conductive type semiconductor layer.
The light emitting device of claim 13, wherein each of the first GaN-based semiconductor layer, the second GaN-based semiconductor layer, and the third GaN-based semiconductor layer has a thickness of about 40 nm to about 60 nm, and wherein each of the first GaN-based semiconductor layer, the second GaN-based semiconductor layer, and the third GaN-based semiconductor layer has a width of about 40 nm to about 50 gm.
canceled
A light emitting device, comprising: a reflective layer comprising a first GaN-based semiconductor layer having a first refractive index, a second GaN-based semiconductor layer having a second refractive index less than the first refractive index, and a third GaN-based semiconductor layer having a third refractive index less than the second refractive index; and a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the reflective layer, wherein the first GaN-based semiconductor layer and the second GaN-based semiconductor layer are alternately stacked in a vertical direction in a first region of the reflective layer, and the second GaN-based semiconductor layer and the third GaN-based semiconductor layer are alternately stacked in the vertical direction in a second region of the reflective layer, and wherein the first GaN-based semiconductor layer and the second GaN-based semiconductor layer are alternately disposed in a horizontal direction in a third region of the reflective layer, and the second GaN-based semiconductor layer and the third GaN-based semiconductor layer are alternately disposed horizontally in a fourth region of the reflective layer.
The light emitting device of claim 20, wherein the first GaN- based semiconductor layer and the second GaN-based semiconductor layer are horizontally BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/MEM/nbt Application No.: 12/948,423 Docket No.: 3449-15 5 4PUS 1 Reply to Office Action of Page 8 of 10 disposed in a lattice shape, and the second GaN-based semiconductor layer and the third GaN- based semiconductor layer are horizontally disposed in the lattice shape.
Layer stacks claimed or described, ordered top of device to substrate.
light emitting device (LED) with GaN-based DBR reflective layer
Materials described outside the worked examples.
first GaN-based semiconductor layer (InGaN)
InGaN
second GaN-based semiconductor layer (GaN)
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
refractive index of InGaN (first GaN-based semiconductor layer) | 2.3 | InGaN |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,390,006Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A light emitting device, comprising: a reflective layer comprising a first GaN-based semiconductor layer having a first refractive index, a second GaN-based semiconductor layer having a second refractive index less than the first refractive index, and a third GaN-based semiconductor layer having a third refractive index less than the second refractive index; and a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the reflective layer, wherein the first GaN-based semiconductor layer and the second GaN-based semiconductor layer are alternately stacked in a vertical direction in a first region of the reflective layer, and the second GaN-based semiconductor layer and the third GaN-based semiconductor layer are alternately stacked in the vertical direction in a second region of the reflective layer, [[and]] wherein the reflective layer comprises a plurality of layers including at least two layers from the first GaN-based semiconductor layer, the second GaN-based semiconductor layer and the third GaN-based semiconductor layer, and wherein at least two of the first GaN-based semiconductor la y er, the second GaN-based semiconductor la y er, and the third GaN-based semiconductor layer are alternately disposed in a horizontal direction perpendicular to the vertical direction.
The light emitting device of claim 1, wherein the first GaN- based semiconductor layer and the third GaN-based semiconductor layer are alternately disposed in the horizontal direction in a third region of the reflective layer, and the second GaN-based semiconductor layer is disposed in a fourth region of the reflective layer.
The light emitting device of claim 1, wherein the first GaN- based semiconductor layer and the second GaN-based semiconductor layer are alternately disposed in the horizontal direction in a third region of the reflective layer, and the second GaN- based semiconductor layer and the third GaN-based semiconductor layer are alternately disposed horizontally in a fourth region of the reflective layer.
The light emitting device of claim 1, wherein the first GaN-based semiconductor layer comprises an InGaN layer, the second GaN-based semiconductor layer comprises a GaN layer, and the third GaN-based semiconductor layer comprises an AlGaN layer.
The light emitting device of claim 1, further comprising a nitride semiconductor layer and a substrate, which are disposed under the reflective layer.
The light emitting device of claim 1, further comprising a first electrode layer on the first conductive type semiconductor layer and a second electrode layer on the second conductive type semiconductor layer.
The light emitting device of claim 1, wherein each of the first GaN-based semiconductor layer, the second GaN-based semiconductor layer, and the third GaN-based semiconductor layer has a thickness of about 40 n m to about 60 nm.
The light emitting device of claim 1, wherein each of the first GaN-based semiconductor layer, the second GaN-based semiconductor layer, and the third GaN- BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/ME M/nbt Application No.: 12/948,423 Docket No.: 3449-1554PUS 1 Reply to Office Action of Page 5 of 10 based semiconductor layer has a width of about 40 nm to about 50 pm.
A light emitting device, comprising: a reflective layer comprising a first GaN-based semiconductor layer having a first refractive index, a second GaN-based semiconductor layer having a second refractive index less than the first refractive index, and a third GaN-based semiconductor layer having a third refractive index less than the second refractive index; and a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the reflective layer, wherein the first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer are stacked in a vertical direction, and wherein the first GaN-based semiconductor layer and the second GaN-based semiconductor layer are alternately disposed in a horizontal direction perpendicular to the vertical direction in a third region of the reflective layer, and the second GaN-based semiconductor layer and the third GaN-based semiconductor layer are alternately disposed in the horizontal direction perpendicular to the vertical direction in a fourth region of the reflective layer.
The light emitting device of claim 13, wherein the first GaN-based semiconductor layer and the second GaN-based semiconductor layer are disposed along the horizontal direction in a lattice shape, and the second GaN-based semiconductor layer and the BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/MEM/nbt Application No.: 12/948,423 Docket No.: 3449-1 5 54PUS 1 Reply to Office Action of Page 6 of 10 third GaN-based semiconductor layer are disposed along the horizontal direction in the lattice shape.
The light emitting device of claim 13, wherein the first GaN-based semiconductor layer comprises an InGaN layer, the second GaN-based semiconductor layer comprises a GaN layer, and the third GaN-based semiconductor layer comprises an AlGaN layer.
The light emitting device of claim 13, further comprising a nitride semiconductor layer and a substrate, which are disposed under the reflective layer.
The light emitting device of claim 13, further comprising a first electrode layer on the first conductive type semiconductor layer and a second electrode layer on the second conductive type semiconductor layer.
The light emitting device of claim 13, wherein each of the first GaN-based semiconductor layer, the second GaN-based semiconductor layer, and the third GaN-based semiconductor layer has a thickness of about 40 nm to about 60 nm, and wherein each of the first GaN-based semiconductor layer, the second GaN-based semiconductor layer, and the third GaN-based semiconductor layer has a width of about 40 nm to about 50 gm.
canceled
A light emitting device, comprising: a reflective layer comprising a first GaN-based semiconductor layer having a first refractive index, a second GaN-based semiconductor layer having a second refractive index less than the first refractive index, and a third GaN-based semiconductor layer having a third refractive index less than the second refractive index; and a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the reflective layer, wherein the first GaN-based semiconductor layer and the second GaN-based semiconductor layer are alternately stacked in a vertical direction in a first region of the reflective layer, and the second GaN-based semiconductor layer and the third GaN-based semiconductor layer are alternately stacked in the vertical direction in a second region of the reflective layer, and wherein the first GaN-based semiconductor layer and the second GaN-based semiconductor layer are alternately disposed in a horizontal direction in a third region of the reflective layer, and the second GaN-based semiconductor layer and the third GaN-based semiconductor layer are alternately disposed horizontally in a fourth region of the reflective layer.
The light emitting device of claim 20, wherein the first GaN- based semiconductor layer and the second GaN-based semiconductor layer are horizontally BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/MEM/nbt Application No.: 12/948,423 Docket No.: 3449-15 5 4PUS 1 Reply to Office Action of Page 8 of 10 disposed in a lattice shape, and the second GaN-based semiconductor layer and the third GaN- based semiconductor layer are horizontally disposed in the lattice shape.
Layer stacks claimed or described, ordered top of device to substrate.
light emitting device (LED) with GaN-based DBR reflective layer
Materials described outside the worked examples.
first GaN-based semiconductor layer (InGaN)
InGaN
second GaN-based semiconductor layer (GaN)
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
refractive index of InGaN (first GaN-based semiconductor layer) | 2.3 | InGaN |
Related documents with shared materials, methods, properties, or citations.
third GaN-based semiconductor layer (AlGaN)
AlGaN
nitride semiconductor layer
substrate
sapphire substrate
Al₂O₃
refractive index of GaN (second GaN-based semiconductor layer) |
| 2.2 |
GaN |
refractive index of AlGaN (third GaN-based semiconductor layer) | 2.1 | AlGaN |
thickness of each GaN-based semiconductor layer in reflective layer (claimed range) | 40–60 nm | — |
width of each GaN-based semiconductor layer in reflective layer (claimed range) | 40–50000 nm | — |
preferred thickness of each GaN-based semiconductor layer in reflective layer (description) | 45–50 nm | — |
Thickness | 45–480 nm | — |
Thickness | 15–40 nm | — |
third GaN-based semiconductor layer (AlGaN)
AlGaN
nitride semiconductor layer
substrate
sapphire substrate
Al₂O₃
refractive index of GaN (second GaN-based semiconductor layer) |
| 2.2 |
GaN |
refractive index of AlGaN (third GaN-based semiconductor layer) | 2.1 | AlGaN |
thickness of each GaN-based semiconductor layer in reflective layer (claimed range) | 40–60 nm | — |
width of each GaN-based semiconductor layer in reflective layer (claimed range) | 40–50000 nm | — |
preferred thickness of each GaN-based semiconductor layer in reflective layer (description) | 45–50 nm | — |
Thickness | 45–480 nm | — |
Thickness | 15–40 nm | — |
third GaN-based semiconductor layer (AlGaN)
AlGaN
nitride semiconductor layer
substrate
sapphire substrate
Al₂O₃
refractive index of GaN (second GaN-based semiconductor layer) |
| 2.2 |
GaN |
refractive index of AlGaN (third GaN-based semiconductor layer) | 2.1 | AlGaN |
thickness of each GaN-based semiconductor layer in reflective layer (claimed range) | 40–60 nm | — |
width of each GaN-based semiconductor layer in reflective layer (claimed range) | 40–50000 nm | — |
preferred thickness of each GaN-based semiconductor layer in reflective layer (description) | 45–50 nm | — |
Thickness | 45–480 nm | — |
Thickness | 15–40 nm | — |
third GaN-based semiconductor layer (AlGaN)
AlGaN
nitride semiconductor layer
substrate
sapphire substrate
Al₂O₃
refractive index of GaN (second GaN-based semiconductor layer) |
| 2.2 |
GaN |
refractive index of AlGaN (third GaN-based semiconductor layer) | 2.1 | AlGaN |
thickness of each GaN-based semiconductor layer in reflective layer (claimed range) | 40–60 nm | — |
width of each GaN-based semiconductor layer in reflective layer (claimed range) | 40–50000 nm | — |
preferred thickness of each GaN-based semiconductor layer in reflective layer (description) | 45–50 nm | — |
Thickness | 45–480 nm | — |
Thickness | 15–40 nm | — |