NORMALLY OFF GALLIUM NITRIDE FIELD EFFECT TRANSISTORS (FET)

Anup Bhalla

Patent

Atlas literature

Patent

US 10,439,058

NORMALLY OFF GALLIUM NITRIDE FIELD EFFECT TRANSISTORS (FET)

Anup Bhalla

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 2

FIG. 3

FIG. 4

FIG. 5

FIG. 6

FIG. 7

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

1 independent · 8 dependent

1
IndependentGaNAlGaNheterostructure field effect transistor (HFET) GaN semiconductor power device
A method of forming a heterostructure ﬁeld eﬀect transistor (HFET) gallium nitride (GaN) semiconductor power device comprising: forming a hetero-junction structure from a ﬁrst semiconductor layer interfacing a second semiconductor layer having diﬀerent band gaps to make a two dimensional gas (2DEG) at the hetero -j unction; forming a source electrode and drain electrode on opposite ends of the 2DEG; forming a ﬂoating gate wrapping around a segment of the hetero-junction structure between the source electrode and the drain electrode on top of the hetero-junction structure; and forming a gate electrode wrapping around the ﬂoating gate for controlling a current ﬂow between said source and drain electrodes in said 2DEG layer. Original
1. 2
  Dependent← claim 1GaNAlGaNheterostructure field effect transistor (HFET) GaN semiconductor power device
  The method of claim 1 wherein: the step of forming the hetero -j unction structure further comprises a step of forming the ﬁrst semiconductor layer comprising GaN interfacing the second semiconductor layer comprising Aluminum gallium nitride (AlGaN). Original
2. 3
  Dependent← claim 1heterostructure field effect transistor (HFET) GaN semiconductor power device
  The method of claim 1 wherein: the step of charging the gate insulation layer to deplete the 2DEG further comprises a step of forming the gate insulation layer with a built-in negative charge. Original
3. 4
  Dependent← claim 1sapphireheterostructure field effect transistor (HFET) GaN semiconductor power device
  The method of claim 1 further comprising: forming the HFET gallium nitride (GaN) semiconductor power device on a sapphire substrate for supporting the hetero -j unction structure thereon. Original
4. 5
  Dependent← claim 1heterostructure field effect transistor (HFET) GaN semiconductor power device
  The method of claim 1 further comprising: forming a gate insulation layer between the gate electrode and the hetero -j unction structure and charging the gate insulation layer to deplete the 2DEG for operating the HFET semiconductor device in a normally oﬀ condition. Original
5. 8
  Dependent← claim 1heterostructure field effect transistor (HFET) GaN semiconductor power device
  The method of claim 1 wherein: the step of forming the source electrode further includes a step of forming the source electrode with an extended ﬁeld plate extending from the source electrode and covering over the gate electrode. Original
6. 9
  Dependent← claim 1heterostructure field effect transistor (HFET) GaN semiconductor power device
  The method of claim 1 wherein: the step of forming the source electrode further includes a step of forming an extended ﬁeld plate extending from the source electrode and covering over the gate electrode wherein the ﬁeld plate is insulated from the gate electrode with a thick insulation layer. Original

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

heterostructure field effect transistor (HFET) GaN semiconductor power device

AlGaNelectron supply layer

GaNchannel layer

sapphiresubstrate

Materials

Materials described outside the worked examples.

gallium nitride

GaN

First Semiconductor Layer Channel

aluminum gallium nitride

AlGaN

Second Semiconductor Layer Electron Supply

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
pinch off voltage shift from negative to positive (claimed minimum)	3 V	—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

NORMALLY OFF GALLIUM NITRIDE FIELD EFFECT TRANSISTORS (FET) | Matter42 Literature