Patent
US 8,729,603of the Invention GaN-BASED SEMICONDUCTOR ELEMENT
Nariaki IKEDA
US
Copyright © 2026 Matter42. All rights reserved.
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US 8,729,603Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. [0025] The GaN-based semiconductor element 20 is to be a G aN-based high electron mobility transistor (HE M T) as a G aN- based heterojunction field …
FIG. 2. According to the second embodiment including the above mentioned structure, the following functions and advantages are able to be obtained. [0052] It …
FIG. 3. The present invention is not limited to the above 30 described embodiments and various; further modifications may be possible without departing from the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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[[The]] A GaN-based semiconductor element, feeIerig-to elaim 10, whe r ei n comprising: a substrate; a buffer layer formed on the substrate, the buffer layer including an electrically conductive portion; an epitaxial layer formed on the buffer layer; and a metal structure in ohmic contact with the electrically conductive portion of the buffer layer for controlling an electric potential of the buffer layer, wherein the buffer layer includes at least one selected from the group consisting of an n-GaN layer having n-type conductivity and an n-A l N layer having n-type conductivity, and the metal structure includes a metal layer in ohmic contact with the electrically conductive portion of the buffer layer at a part of a region where the buffer layer is formed on the substrate, and an electrode implanted into the epitaxial layer to extend to a depth reaching the metal layer to be in electrical contact with the metal layer.
The GaN-based semiconductor element according to claim 15, wherein the metal layer is formed of at least one selected from the group consisting of Ni, Nb, Mo, Ta, W, Re, Os, Ir, and Pt.
A semiconductor element, comprising: a substrate; a buffer layer formed on the substrate, the buffer layer including an electrically conductive portion; an epitaxial layer formed on the buffer layer and configured to generate a two- dimensional electron gas in a portion thereof; and a metal structure for controlling an electric potential of the buffer layer, wherein the metal structure is in direct ohmic contact with the electrically conductive portion of the buffer layer at a level below the portion of the epitaxial layer where the two-dimensional electron gas is to be generated.
The semiconductor element according to claim 17, further comprising a source electrode, a gate electrode, and a drain electrode formed on the epitaxial layer, wherein the metal structure comprises the source electrode.
The semiconductor element according to claim 17, wherein the metal structure includes a metal layer formed on the substrate, in direct ohmic contact with the electrically conductive portion of the buffer layer, and at least partially co- elevational with the buffer layer.
The semiconductor element according to claim 17, wherein the epitaxial layer includes a channel layer of undoped GaN formed on the buffer layer, and an electron supply layer of AlGaN formed on the channel layer; and the portion where the two-dimensional electron gas is to be generated is in the channel layer near an interface between the electron supply layer and the channel layer.
The semiconductor element according to claim 17, wherein the epitaxial layer includes GaN-based semiconductor materials.
The semiconductor element according to claim 17, wherein the buffer layer includes at least one selected from the group consisting of an n- GaN layer having n-type conductivity and an n-A l N layer having n-type conductivity.
The GaN-based semiconductor element according to claim 17, wherein the buffer layer includes an n-GaN layer having n-type conductivity.
The GaN-based semiconductor element according to claim 17, wherein the buffer layer includes an n-A l N layer having n-type conductivity.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor element (claim 15)
semiconductor element with 2DEG (claim 17)
Materials described outside the worked examples.
n-GaN layer
GaN
n-AlN layer
AlN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. [0025] The GaN-based semiconductor element 20 is to be a G aN-based high electron mobility transistor (HE M T) as a G aN- based heterojunction field …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,729,603Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. [0025] The GaN-based semiconductor element 20 is to be a G aN-based high electron mobility transistor (HE M T) as a G aN- based heterojunction field …
FIG. 2. According to the second embodiment including the above mentioned structure, the following functions and advantages are able to be obtained. [0052] It …
FIG. 3. The present invention is not limited to the above 30 described embodiments and various; further modifications may be possible without departing from the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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[[The]] A GaN-based semiconductor element, feeIerig-to elaim 10, whe r ei n comprising: a substrate; a buffer layer formed on the substrate, the buffer layer including an electrically conductive portion; an epitaxial layer formed on the buffer layer; and a metal structure in ohmic contact with the electrically conductive portion of the buffer layer for controlling an electric potential of the buffer layer, wherein the buffer layer includes at least one selected from the group consisting of an n-GaN layer having n-type conductivity and an n-A l N layer having n-type conductivity, and the metal structure includes a metal layer in ohmic contact with the electrically conductive portion of the buffer layer at a part of a region where the buffer layer is formed on the substrate, and an electrode implanted into the epitaxial layer to extend to a depth reaching the metal layer to be in electrical contact with the metal layer.
The GaN-based semiconductor element according to claim 15, wherein the metal layer is formed of at least one selected from the group consisting of Ni, Nb, Mo, Ta, W, Re, Os, Ir, and Pt.
A semiconductor element, comprising: a substrate; a buffer layer formed on the substrate, the buffer layer including an electrically conductive portion; an epitaxial layer formed on the buffer layer and configured to generate a two- dimensional electron gas in a portion thereof; and a metal structure for controlling an electric potential of the buffer layer, wherein the metal structure is in direct ohmic contact with the electrically conductive portion of the buffer layer at a level below the portion of the epitaxial layer where the two-dimensional electron gas is to be generated.
The semiconductor element according to claim 17, further comprising a source electrode, a gate electrode, and a drain electrode formed on the epitaxial layer, wherein the metal structure comprises the source electrode.
The semiconductor element according to claim 17, wherein the metal structure includes a metal layer formed on the substrate, in direct ohmic contact with the electrically conductive portion of the buffer layer, and at least partially co- elevational with the buffer layer.
The semiconductor element according to claim 17, wherein the epitaxial layer includes a channel layer of undoped GaN formed on the buffer layer, and an electron supply layer of AlGaN formed on the channel layer; and the portion where the two-dimensional electron gas is to be generated is in the channel layer near an interface between the electron supply layer and the channel layer.
The semiconductor element according to claim 17, wherein the epitaxial layer includes GaN-based semiconductor materials.
The semiconductor element according to claim 17, wherein the buffer layer includes at least one selected from the group consisting of an n- GaN layer having n-type conductivity and an n-A l N layer having n-type conductivity.
The GaN-based semiconductor element according to claim 17, wherein the buffer layer includes an n-GaN layer having n-type conductivity.
The GaN-based semiconductor element according to claim 17, wherein the buffer layer includes an n-A l N layer having n-type conductivity.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor element (claim 15)
semiconductor element with 2DEG (claim 17)
Materials described outside the worked examples.
n-GaN layer
GaN
n-AlN layer
AlN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. [0025] The GaN-based semiconductor element 20 is to be a G aN-based high electron mobility transistor (HE M T) as a G aN- based heterojunction field …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,729,603Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. [0025] The GaN-based semiconductor element 20 is to be a G aN-based high electron mobility transistor (HE M T) as a G aN- based heterojunction field …
FIG. 2. According to the second embodiment including the above mentioned structure, the following functions and advantages are able to be obtained. [0052] It …
FIG. 3. The present invention is not limited to the above 30 described embodiments and various; further modifications may be possible without departing from the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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[[The]] A GaN-based semiconductor element, feeIerig-to elaim 10, whe r ei n comprising: a substrate; a buffer layer formed on the substrate, the buffer layer including an electrically conductive portion; an epitaxial layer formed on the buffer layer; and a metal structure in ohmic contact with the electrically conductive portion of the buffer layer for controlling an electric potential of the buffer layer, wherein the buffer layer includes at least one selected from the group consisting of an n-GaN layer having n-type conductivity and an n-A l N layer having n-type conductivity, and the metal structure includes a metal layer in ohmic contact with the electrically conductive portion of the buffer layer at a part of a region where the buffer layer is formed on the substrate, and an electrode implanted into the epitaxial layer to extend to a depth reaching the metal layer to be in electrical contact with the metal layer.
The GaN-based semiconductor element according to claim 15, wherein the metal layer is formed of at least one selected from the group consisting of Ni, Nb, Mo, Ta, W, Re, Os, Ir, and Pt.
A semiconductor element, comprising: a substrate; a buffer layer formed on the substrate, the buffer layer including an electrically conductive portion; an epitaxial layer formed on the buffer layer and configured to generate a two- dimensional electron gas in a portion thereof; and a metal structure for controlling an electric potential of the buffer layer, wherein the metal structure is in direct ohmic contact with the electrically conductive portion of the buffer layer at a level below the portion of the epitaxial layer where the two-dimensional electron gas is to be generated.
The semiconductor element according to claim 17, further comprising a source electrode, a gate electrode, and a drain electrode formed on the epitaxial layer, wherein the metal structure comprises the source electrode.
The semiconductor element according to claim 17, wherein the metal structure includes a metal layer formed on the substrate, in direct ohmic contact with the electrically conductive portion of the buffer layer, and at least partially co- elevational with the buffer layer.
The semiconductor element according to claim 17, wherein the epitaxial layer includes a channel layer of undoped GaN formed on the buffer layer, and an electron supply layer of AlGaN formed on the channel layer; and the portion where the two-dimensional electron gas is to be generated is in the channel layer near an interface between the electron supply layer and the channel layer.
The semiconductor element according to claim 17, wherein the epitaxial layer includes GaN-based semiconductor materials.
The semiconductor element according to claim 17, wherein the buffer layer includes at least one selected from the group consisting of an n- GaN layer having n-type conductivity and an n-A l N layer having n-type conductivity.
The GaN-based semiconductor element according to claim 17, wherein the buffer layer includes an n-GaN layer having n-type conductivity.
The GaN-based semiconductor element according to claim 17, wherein the buffer layer includes an n-A l N layer having n-type conductivity.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor element (claim 15)
semiconductor element with 2DEG (claim 17)
Materials described outside the worked examples.
n-GaN layer
GaN
n-AlN layer
AlN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. [0025] The GaN-based semiconductor element 20 is to be a G aN-based high electron mobility transistor (HE M T) as a G aN- based heterojunction field …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,729,603Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. [0025] The GaN-based semiconductor element 20 is to be a G aN-based high electron mobility transistor (HE M T) as a G aN- based heterojunction field …
FIG. 2. According to the second embodiment including the above mentioned structure, the following functions and advantages are able to be obtained. [0052] It …
FIG. 3. The present invention is not limited to the above 30 described embodiments and various; further modifications may be possible without departing from the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-14 canceled
canceled
canceled
canceled
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canceled
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canceled
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[[The]] A GaN-based semiconductor element, feeIerig-to elaim 10, whe r ei n comprising: a substrate; a buffer layer formed on the substrate, the buffer layer including an electrically conductive portion; an epitaxial layer formed on the buffer layer; and a metal structure in ohmic contact with the electrically conductive portion of the buffer layer for controlling an electric potential of the buffer layer, wherein the buffer layer includes at least one selected from the group consisting of an n-GaN layer having n-type conductivity and an n-A l N layer having n-type conductivity, and the metal structure includes a metal layer in ohmic contact with the electrically conductive portion of the buffer layer at a part of a region where the buffer layer is formed on the substrate, and an electrode implanted into the epitaxial layer to extend to a depth reaching the metal layer to be in electrical contact with the metal layer.
The GaN-based semiconductor element according to claim 15, wherein the metal layer is formed of at least one selected from the group consisting of Ni, Nb, Mo, Ta, W, Re, Os, Ir, and Pt.
A semiconductor element, comprising: a substrate; a buffer layer formed on the substrate, the buffer layer including an electrically conductive portion; an epitaxial layer formed on the buffer layer and configured to generate a two- dimensional electron gas in a portion thereof; and a metal structure for controlling an electric potential of the buffer layer, wherein the metal structure is in direct ohmic contact with the electrically conductive portion of the buffer layer at a level below the portion of the epitaxial layer where the two-dimensional electron gas is to be generated.
The semiconductor element according to claim 17, further comprising a source electrode, a gate electrode, and a drain electrode formed on the epitaxial layer, wherein the metal structure comprises the source electrode.
The semiconductor element according to claim 17, wherein the metal structure includes a metal layer formed on the substrate, in direct ohmic contact with the electrically conductive portion of the buffer layer, and at least partially co- elevational with the buffer layer.
The semiconductor element according to claim 17, wherein the epitaxial layer includes a channel layer of undoped GaN formed on the buffer layer, and an electron supply layer of AlGaN formed on the channel layer; and the portion where the two-dimensional electron gas is to be generated is in the channel layer near an interface between the electron supply layer and the channel layer.
The semiconductor element according to claim 17, wherein the epitaxial layer includes GaN-based semiconductor materials.
The semiconductor element according to claim 17, wherein the buffer layer includes at least one selected from the group consisting of an n- GaN layer having n-type conductivity and an n-A l N layer having n-type conductivity.
The GaN-based semiconductor element according to claim 17, wherein the buffer layer includes an n-GaN layer having n-type conductivity.
The GaN-based semiconductor element according to claim 17, wherein the buffer layer includes an n-A l N layer having n-type conductivity.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor element (claim 15)
semiconductor element with 2DEG (claim 17)
Materials described outside the worked examples.
n-GaN layer
GaN
n-AlN layer
AlN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. [0025] The GaN-based semiconductor element 20 is to be a G aN-based high electron mobility transistor (HE M T) as a G aN- based heterojunction field …
Related documents with shared materials, methods, properties, or citations.
GaN-based semiconductor element (abstract embodiment)
substrate
ohmic contact metal layer
AlGaN electron supply layer
AlGaN
GaN-based semiconductor materials
sapphire (0001) substrate
Al₂O₃
GaN-based semiconductor element (abstract embodiment)
substrate
ohmic contact metal layer
AlGaN electron supply layer
AlGaN
GaN-based semiconductor materials
sapphire (0001) substrate
Al₂O₃
GaN-based semiconductor element (abstract embodiment)
substrate
ohmic contact metal layer
AlGaN electron supply layer
AlGaN
GaN-based semiconductor materials
sapphire (0001) substrate
Al₂O₃
GaN-based semiconductor element (abstract embodiment)
substrate
ohmic contact metal layer
AlGaN electron supply layer
AlGaN
GaN-based semiconductor materials
sapphire (0001) substrate
Al₂O₃