Patent
US 9,768,352POLYCRYSTALLINE GALLIUM-NITRIDE SELF-SUPPORTING SUBSTRATE AND LIGHT-EMITTING ELEMENT USING SAME
Morimichi WATANABE
US
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Patent
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Patent
US 9,768,352Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A self-supporting polycrystalline ga ll ium nitride substrate composed of a plurality of gallium nitride-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate, wherein crystal orientations of individual gallium nitride-based single crystal grains as determined from inverse pole figure mapping by electron backscatter diffraction (EBSD) analysis performed on a substrate su rf ace are distributed with various tilt angles from the specific crystal orientation, wherein an average tilt angle thereof is 1 to 10 *, and wherein an aspect ratio T/D T, which is defined as a ratio of a thickness T of the self-supporting polycrystalline gallium nitride substrate to a cross-sectional average diameter D T at an outermost surface of the gallium nitride-based single crystal grains exposed at a top surface of the self-supporting polycrystalline gallium nitride substrate, is preferably 0.7 or greater.
The self-supporting polycrystalline ga l lium nitride substrate according to claim 1, wherein no less than 80% of the gallium nitride-based single crystal grains subjected to inverse pole figure mapping by electron backscatter diffraction (EBS D) analysis have a tilt angle within a range of 1 to 10 *.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the tilt angle of the gallium nitride-based single crystal grains is distributed according to Gaussian distribution.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a defect density of 1 x 10 4 defects/cm 2 or less.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a defect density of 1 x1 0 2 defects/cm 2 or less.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a single crystal structure in the direction approximately normal to the substrate.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains exposed at a top surface of the self-supporting polycrystalline gallium nitride substrate connect to a bottom su rf ace of the self-supporting polycrystalline gallium nitride substrate without intervention of a grain boundary.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein a cross-sectional average diameter D T at an outermost surface of the gallium nitride-based single crystal grains exposed at a top surface of the self-supporting polycrystalline gallium nitride substrate is different from a cross-sectional average diameter D B at an o uterm ost surf ace of the gallium nitride-based single crystal grains exposed at a bottom surface of the self-supporting polycrystalline gallium nitride substrate.
The self-suppo rt ing polycrystalline gallium nitride substrate according to claim 1, wherein a ratio D T/D B is greater than 1.0, which is a ratio of a cross-sectional average diameter D T at an outermo st surf ace of the gallium nitride-ba s ed single crystal grains exposed at a top surface of the self-supporting polycrystalline gallium nitride substrate to a cross-sectional average diameter D B at an o utermo st s urface of the gallium nitride-based single crystal grains exposed at a bottom surface of the self-supporting polycrystalline gallium nitride substrate.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains have a cross-sectional average diameter of 10 p m or greater at an outermost surface of the substrate.
The self-supporting polycrystalline ga ll ium nitride substrate according to claim 1, having a thickness of 20 pm or greater.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a diameter of 50.8 mm or greater.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are doped with an n-type dopant or a p-type dopant.
The self-suppo r ting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are free from a dopant.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are made of a mixed crystal.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains constituting the self-supporting polycrystalline gallium nitride substrate are crystallographically non-oriented in a direction parallel to the plate surface, which is perpendicular to the direction normal to the substrate.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the aspect ratio T/D T is 1.0 or greater.
A light emitting device comprising: the self-supporting polycrystalline gallium nitride substrate according to claim 1; and a light emitting functional layer formed on the substrate, wherein the light emitting functional layer has at least one layer composed of a plurality of semiconductor single crystal grains, wherein the at least one layer has a single crystal structure in a direction approximately normal to the substrate. GK-70054US-C
Layer stacks claimed or described, ordered top of device to substrate.
self-supporting polycrystalline gallium nitride substrate
light emitting device
Materials described outside the worked examples.
polycrystalline gallium nitride
GaN
semiconductor single crystal grains (light emitting functional layer)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average tilt angle of GaN-based single crystal grains from specific crystal orientation (EBSD IPF mapping) | 1–10 degrees | GaN |
defect density (claim 4 limit) | ≤ 10000 defects/cm2 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,768,352Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A self-supporting polycrystalline ga ll ium nitride substrate composed of a plurality of gallium nitride-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate, wherein crystal orientations of individual gallium nitride-based single crystal grains as determined from inverse pole figure mapping by electron backscatter diffraction (EBSD) analysis performed on a substrate su rf ace are distributed with various tilt angles from the specific crystal orientation, wherein an average tilt angle thereof is 1 to 10 *, and wherein an aspect ratio T/D T, which is defined as a ratio of a thickness T of the self-supporting polycrystalline gallium nitride substrate to a cross-sectional average diameter D T at an outermost surface of the gallium nitride-based single crystal grains exposed at a top surface of the self-supporting polycrystalline gallium nitride substrate, is preferably 0.7 or greater.
The self-supporting polycrystalline ga l lium nitride substrate according to claim 1, wherein no less than 80% of the gallium nitride-based single crystal grains subjected to inverse pole figure mapping by electron backscatter diffraction (EBS D) analysis have a tilt angle within a range of 1 to 10 *.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the tilt angle of the gallium nitride-based single crystal grains is distributed according to Gaussian distribution.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a defect density of 1 x 10 4 defects/cm 2 or less.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a defect density of 1 x1 0 2 defects/cm 2 or less.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a single crystal structure in the direction approximately normal to the substrate.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains exposed at a top surface of the self-supporting polycrystalline gallium nitride substrate connect to a bottom su rf ace of the self-supporting polycrystalline gallium nitride substrate without intervention of a grain boundary.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein a cross-sectional average diameter D T at an outermost surface of the gallium nitride-based single crystal grains exposed at a top surface of the self-supporting polycrystalline gallium nitride substrate is different from a cross-sectional average diameter D B at an o uterm ost surf ace of the gallium nitride-based single crystal grains exposed at a bottom surface of the self-supporting polycrystalline gallium nitride substrate.
The self-suppo rt ing polycrystalline gallium nitride substrate according to claim 1, wherein a ratio D T/D B is greater than 1.0, which is a ratio of a cross-sectional average diameter D T at an outermo st surf ace of the gallium nitride-ba s ed single crystal grains exposed at a top surface of the self-supporting polycrystalline gallium nitride substrate to a cross-sectional average diameter D B at an o utermo st s urface of the gallium nitride-based single crystal grains exposed at a bottom surface of the self-supporting polycrystalline gallium nitride substrate.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains have a cross-sectional average diameter of 10 p m or greater at an outermost surface of the substrate.
The self-supporting polycrystalline ga ll ium nitride substrate according to claim 1, having a thickness of 20 pm or greater.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a diameter of 50.8 mm or greater.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are doped with an n-type dopant or a p-type dopant.
The self-suppo r ting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are free from a dopant.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are made of a mixed crystal.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains constituting the self-supporting polycrystalline gallium nitride substrate are crystallographically non-oriented in a direction parallel to the plate surface, which is perpendicular to the direction normal to the substrate.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the aspect ratio T/D T is 1.0 or greater.
A light emitting device comprising: the self-supporting polycrystalline gallium nitride substrate according to claim 1; and a light emitting functional layer formed on the substrate, wherein the light emitting functional layer has at least one layer composed of a plurality of semiconductor single crystal grains, wherein the at least one layer has a single crystal structure in a direction approximately normal to the substrate. GK-70054US-C
Layer stacks claimed or described, ordered top of device to substrate.
self-supporting polycrystalline gallium nitride substrate
light emitting device
Materials described outside the worked examples.
polycrystalline gallium nitride
GaN
semiconductor single crystal grains (light emitting functional layer)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average tilt angle of GaN-based single crystal grains from specific crystal orientation (EBSD IPF mapping) | 1–10 degrees | GaN |
defect density (claim 4 limit) | ≤ 10000 defects/cm2 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,768,352Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A self-supporting polycrystalline ga ll ium nitride substrate composed of a plurality of gallium nitride-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate, wherein crystal orientations of individual gallium nitride-based single crystal grains as determined from inverse pole figure mapping by electron backscatter diffraction (EBSD) analysis performed on a substrate su rf ace are distributed with various tilt angles from the specific crystal orientation, wherein an average tilt angle thereof is 1 to 10 *, and wherein an aspect ratio T/D T, which is defined as a ratio of a thickness T of the self-supporting polycrystalline gallium nitride substrate to a cross-sectional average diameter D T at an outermost surface of the gallium nitride-based single crystal grains exposed at a top surface of the self-supporting polycrystalline gallium nitride substrate, is preferably 0.7 or greater.
The self-supporting polycrystalline ga l lium nitride substrate according to claim 1, wherein no less than 80% of the gallium nitride-based single crystal grains subjected to inverse pole figure mapping by electron backscatter diffraction (EBS D) analysis have a tilt angle within a range of 1 to 10 *.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the tilt angle of the gallium nitride-based single crystal grains is distributed according to Gaussian distribution.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a defect density of 1 x 10 4 defects/cm 2 or less.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a defect density of 1 x1 0 2 defects/cm 2 or less.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a single crystal structure in the direction approximately normal to the substrate.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains exposed at a top surface of the self-supporting polycrystalline gallium nitride substrate connect to a bottom su rf ace of the self-supporting polycrystalline gallium nitride substrate without intervention of a grain boundary.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein a cross-sectional average diameter D T at an outermost surface of the gallium nitride-based single crystal grains exposed at a top surface of the self-supporting polycrystalline gallium nitride substrate is different from a cross-sectional average diameter D B at an o uterm ost surf ace of the gallium nitride-based single crystal grains exposed at a bottom surface of the self-supporting polycrystalline gallium nitride substrate.
The self-suppo rt ing polycrystalline gallium nitride substrate according to claim 1, wherein a ratio D T/D B is greater than 1.0, which is a ratio of a cross-sectional average diameter D T at an outermo st surf ace of the gallium nitride-ba s ed single crystal grains exposed at a top surface of the self-supporting polycrystalline gallium nitride substrate to a cross-sectional average diameter D B at an o utermo st s urface of the gallium nitride-based single crystal grains exposed at a bottom surface of the self-supporting polycrystalline gallium nitride substrate.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains have a cross-sectional average diameter of 10 p m or greater at an outermost surface of the substrate.
The self-supporting polycrystalline ga ll ium nitride substrate according to claim 1, having a thickness of 20 pm or greater.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a diameter of 50.8 mm or greater.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are doped with an n-type dopant or a p-type dopant.
The self-suppo r ting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are free from a dopant.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are made of a mixed crystal.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains constituting the self-supporting polycrystalline gallium nitride substrate are crystallographically non-oriented in a direction parallel to the plate surface, which is perpendicular to the direction normal to the substrate.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the aspect ratio T/D T is 1.0 or greater.
A light emitting device comprising: the self-supporting polycrystalline gallium nitride substrate according to claim 1; and a light emitting functional layer formed on the substrate, wherein the light emitting functional layer has at least one layer composed of a plurality of semiconductor single crystal grains, wherein the at least one layer has a single crystal structure in a direction approximately normal to the substrate. GK-70054US-C
Layer stacks claimed or described, ordered top of device to substrate.
self-supporting polycrystalline gallium nitride substrate
light emitting device
Materials described outside the worked examples.
polycrystalline gallium nitride
GaN
semiconductor single crystal grains (light emitting functional layer)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average tilt angle of GaN-based single crystal grains from specific crystal orientation (EBSD IPF mapping) | 1–10 degrees | GaN |
defect density (claim 4 limit) | ≤ 10000 defects/cm2 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,768,352Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A self-supporting polycrystalline ga ll ium nitride substrate composed of a plurality of gallium nitride-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate, wherein crystal orientations of individual gallium nitride-based single crystal grains as determined from inverse pole figure mapping by electron backscatter diffraction (EBSD) analysis performed on a substrate su rf ace are distributed with various tilt angles from the specific crystal orientation, wherein an average tilt angle thereof is 1 to 10 *, and wherein an aspect ratio T/D T, which is defined as a ratio of a thickness T of the self-supporting polycrystalline gallium nitride substrate to a cross-sectional average diameter D T at an outermost surface of the gallium nitride-based single crystal grains exposed at a top surface of the self-supporting polycrystalline gallium nitride substrate, is preferably 0.7 or greater.
The self-supporting polycrystalline ga l lium nitride substrate according to claim 1, wherein no less than 80% of the gallium nitride-based single crystal grains subjected to inverse pole figure mapping by electron backscatter diffraction (EBS D) analysis have a tilt angle within a range of 1 to 10 *.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the tilt angle of the gallium nitride-based single crystal grains is distributed according to Gaussian distribution.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a defect density of 1 x 10 4 defects/cm 2 or less.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a defect density of 1 x1 0 2 defects/cm 2 or less.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a single crystal structure in the direction approximately normal to the substrate.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains exposed at a top surface of the self-supporting polycrystalline gallium nitride substrate connect to a bottom su rf ace of the self-supporting polycrystalline gallium nitride substrate without intervention of a grain boundary.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein a cross-sectional average diameter D T at an outermost surface of the gallium nitride-based single crystal grains exposed at a top surface of the self-supporting polycrystalline gallium nitride substrate is different from a cross-sectional average diameter D B at an o uterm ost surf ace of the gallium nitride-based single crystal grains exposed at a bottom surface of the self-supporting polycrystalline gallium nitride substrate.
The self-suppo rt ing polycrystalline gallium nitride substrate according to claim 1, wherein a ratio D T/D B is greater than 1.0, which is a ratio of a cross-sectional average diameter D T at an outermo st surf ace of the gallium nitride-ba s ed single crystal grains exposed at a top surface of the self-supporting polycrystalline gallium nitride substrate to a cross-sectional average diameter D B at an o utermo st s urface of the gallium nitride-based single crystal grains exposed at a bottom surface of the self-supporting polycrystalline gallium nitride substrate.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains have a cross-sectional average diameter of 10 p m or greater at an outermost surface of the substrate.
The self-supporting polycrystalline ga ll ium nitride substrate according to claim 1, having a thickness of 20 pm or greater.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, having a diameter of 50.8 mm or greater.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are doped with an n-type dopant or a p-type dopant.
The self-suppo r ting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are free from a dopant.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains are made of a mixed crystal.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the gallium nitride-based single crystal grains constituting the self-supporting polycrystalline gallium nitride substrate are crystallographically non-oriented in a direction parallel to the plate surface, which is perpendicular to the direction normal to the substrate.
The self-supporting polycrystalline gallium nitride substrate according to claim 1, wherein the aspect ratio T/D T is 1.0 or greater.
A light emitting device comprising: the self-supporting polycrystalline gallium nitride substrate according to claim 1; and a light emitting functional layer formed on the substrate, wherein the light emitting functional layer has at least one layer composed of a plurality of semiconductor single crystal grains, wherein the at least one layer has a single crystal structure in a direction approximately normal to the substrate. GK-70054US-C
Layer stacks claimed or described, ordered top of device to substrate.
self-supporting polycrystalline gallium nitride substrate
light emitting device
Materials described outside the worked examples.
polycrystalline gallium nitride
GaN
semiconductor single crystal grains (light emitting functional layer)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average tilt angle of GaN-based single crystal grains from specific crystal orientation (EBSD IPF mapping) | 1–10 degrees | GaN |
defect density (claim 4 limit) | ≤ 10000 defects/cm2 |
Related documents with shared materials, methods, properties, or citations.
InGaN
sapphire
Al₂O₃
defect density (claim 5 limit) | ≤ 100 defects/cm2 | GaN |
cross-sectional average diameter of GaN-based single crystal grains at outermost substrate surface | ≥ 10 µm | GaN |
self-supporting polycrystalline GaN substrate thickness | ≥ 20 µm | GaN |
self-supporting polycrystalline GaN substrate diameter | ≥ 50.8 mm | GaN |
Duration | 60–36000 s | — |
Duration | 1800–18000 s | — |
Duration | 2–5 hours | — |
Duration | 1–10 hours | — |
Temperature | 450–550 °C | — |
Pressure | 3.5–4.5 MPa | — |
Duration | 10–100 hours | — |
Thickness | 20–50 nm | — |
Thickness | ≤ 10 cm | — |
Thickness | ≥ 5 mm | — |
InGaN
sapphire
Al₂O₃
defect density (claim 5 limit) | ≤ 100 defects/cm2 | GaN |
cross-sectional average diameter of GaN-based single crystal grains at outermost substrate surface | ≥ 10 µm | GaN |
self-supporting polycrystalline GaN substrate thickness | ≥ 20 µm | GaN |
self-supporting polycrystalline GaN substrate diameter | ≥ 50.8 mm | GaN |
Duration | 60–36000 s | — |
Duration | 1800–18000 s | — |
Duration | 2–5 hours | — |
Duration | 1–10 hours | — |
Temperature | 450–550 °C | — |
Pressure | 3.5–4.5 MPa | — |
Duration | 10–100 hours | — |
Thickness | 20–50 nm | — |
Thickness | ≤ 10 cm | — |
Thickness | ≥ 5 mm | — |
InGaN
sapphire
Al₂O₃
defect density (claim 5 limit) | ≤ 100 defects/cm2 | GaN |
cross-sectional average diameter of GaN-based single crystal grains at outermost substrate surface | ≥ 10 µm | GaN |
self-supporting polycrystalline GaN substrate thickness | ≥ 20 µm | GaN |
self-supporting polycrystalline GaN substrate diameter | ≥ 50.8 mm | GaN |
Duration | 60–36000 s | — |
Duration | 1800–18000 s | — |
Duration | 2–5 hours | — |
Duration | 1–10 hours | — |
Temperature | 450–550 °C | — |
Pressure | 3.5–4.5 MPa | — |
Duration | 10–100 hours | — |
Thickness | 20–50 nm | — |
Thickness | ≤ 10 cm | — |
Thickness | ≥ 5 mm | — |
InGaN
sapphire
Al₂O₃
defect density (claim 5 limit) | ≤ 100 defects/cm2 | GaN |
cross-sectional average diameter of GaN-based single crystal grains at outermost substrate surface | ≥ 10 µm | GaN |
self-supporting polycrystalline GaN substrate thickness | ≥ 20 µm | GaN |
self-supporting polycrystalline GaN substrate diameter | ≥ 50.8 mm | GaN |
Duration | 60–36000 s | — |
Duration | 1800–18000 s | — |
Duration | 2–5 hours | — |
Duration | 1–10 hours | — |
Temperature | 450–550 °C | — |
Pressure | 3.5–4.5 MPa | — |
Duration | 10–100 hours | — |
Thickness | 20–50 nm | — |
Thickness | ≤ 10 cm | — |
Thickness | ≥ 5 mm | — |