Patent
Atlas literature
Patent
US 12,591,085 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a gallium nitride nano superstructure according to an embodiment of the present invention.
FIG. 2 is a top view of the gallium nitride nano super- 55 structure of Example 1 of the present invention.
FIG. 3 is a top view of the gallium nitride nano super- structure of Example 2 of the present invention.
FIG. 4 is a schematic flow diagram of a preparation method of a gallium nitride nano superstructure in accor- 60 dance with one embodiment of the present …
FIG. 5b are transmission line and phase difference vs. amplitude ratios, respectively, of the gallium nitride nano superstructure prepared in Example 3 of the …
FIG. 6b are transmission line and phase difference vs. amplitude ratios, respectively, of the gallium B₂ nitride nano superstructure prepared in Example 4 of …
FIGS. 7-10 are schematic illustrations of the structure of gallium nitride-based lasers according to embodiments of the present invention (gallium nitride nano …
FIGS. 9 and 10. The gallium nitride nano superstructure B and the gallium nitride-based laser body A are integrated into a front end of the light-emitting end …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride-based laser, comprising a gallium nitride-based laser body and a gallium nitride nano superstructure wherein the gallium nitride nano superstructure is arranged at a front end of a light-emitting end face of the gallium nitride-based laser body, and an included angle between a wire grid direction of the gallium nitride nano superstructure grating and a polarization direction of the light-emitting of the gallium nitride-based laser body is 45°; wherein the gallium nitride nano superstructure is used for realizing circularly polarized light output of the gallium nitride-based laser, the gallium nitride nano superstruc-ture comprising, from bottom to top: a substrate, a dielectric film layer and a nano-grating structure layer: wherein a grating material of the nano-grating structure layer comprises one of gallium nitride, N-type gallium nitride and P-type gallium nitride, a grating period is in a range of 100 nm⁻²⁸⁰ nm, a grating height is in a range of 100 nm⁻³⁰⁰ nm, and a grating line width is in a range of 50 nm⁻²⁰⁰ nm.
The gallium nitride-based laser according to claim 1, wherein a substrate material of the gallium nitride nano superstructure comprises gallium nitride or sapphire.
The gallium nitride-based laser according to claim 1, wherein a material of the dielectric film layer of the gallium nitride nano superstructure comprises one of gallium nitride, N-type gallium nitride and P-type gallium nitride, and a thickness of the dielectric film layer ranges from 0.1 µm to 100 µm.
The gallium nitride-based laser according to claim 1, wherein the gallium nitride nano superstructure has a size of 10-1000 µm and a shape thereof comprises a circle or a square. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials
A gallium nitride nano superstructure integrated on a gallium nitride-based laser chip to realize circularly polarized light output. The structure comprises a substrate (GaN or sapphire), a dielectric film layer (GaN, N-type GaN, or P-type GaN, 0.1-100 µm thick), and a nano-grating structure layer with grating period 100-280 nm, grating height 100-300 nm, and grating line width 50-200 nm. The overall superstructure size is 10-1000 µm with circular or square profile.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride nano superstructure
gallium nitride-based laser
Materials described outside the worked examples.
metallic nickel
Ni
chromium
Cr
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.1–100 µm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,591,085 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a gallium nitride nano superstructure according to an embodiment of the present invention.
FIG. 2 is a top view of the gallium nitride nano super- 55 structure of Example 1 of the present invention.
FIG. 3 is a top view of the gallium nitride nano super- structure of Example 2 of the present invention.
FIG. 4 is a schematic flow diagram of a preparation method of a gallium nitride nano superstructure in accor- 60 dance with one embodiment of the present …
FIG. 5b are transmission line and phase difference vs. amplitude ratios, respectively, of the gallium nitride nano superstructure prepared in Example 3 of the …
FIG. 6b are transmission line and phase difference vs. amplitude ratios, respectively, of the gallium B₂ nitride nano superstructure prepared in Example 4 of …
FIGS. 7-10 are schematic illustrations of the structure of gallium nitride-based lasers according to embodiments of the present invention (gallium nitride nano …
FIGS. 9 and 10. The gallium nitride nano superstructure B and the gallium nitride-based laser body A are integrated into a front end of the light-emitting end …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride-based laser, comprising a gallium nitride-based laser body and a gallium nitride nano superstructure wherein the gallium nitride nano superstructure is arranged at a front end of a light-emitting end face of the gallium nitride-based laser body, and an included angle between a wire grid direction of the gallium nitride nano superstructure grating and a polarization direction of the light-emitting of the gallium nitride-based laser body is 45°; wherein the gallium nitride nano superstructure is used for realizing circularly polarized light output of the gallium nitride-based laser, the gallium nitride nano superstruc-ture comprising, from bottom to top: a substrate, a dielectric film layer and a nano-grating structure layer: wherein a grating material of the nano-grating structure layer comprises one of gallium nitride, N-type gallium nitride and P-type gallium nitride, a grating period is in a range of 100 nm⁻²⁸⁰ nm, a grating height is in a range of 100 nm⁻³⁰⁰ nm, and a grating line width is in a range of 50 nm⁻²⁰⁰ nm.
The gallium nitride-based laser according to claim 1, wherein a substrate material of the gallium nitride nano superstructure comprises gallium nitride or sapphire.
The gallium nitride-based laser according to claim 1, wherein a material of the dielectric film layer of the gallium nitride nano superstructure comprises one of gallium nitride, N-type gallium nitride and P-type gallium nitride, and a thickness of the dielectric film layer ranges from 0.1 µm to 100 µm.
The gallium nitride-based laser according to claim 1, wherein the gallium nitride nano superstructure has a size of 10-1000 µm and a shape thereof comprises a circle or a square. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials
A gallium nitride nano superstructure integrated on a gallium nitride-based laser chip to realize circularly polarized light output. The structure comprises a substrate (GaN or sapphire), a dielectric film layer (GaN, N-type GaN, or P-type GaN, 0.1-100 µm thick), and a nano-grating structure layer with grating period 100-280 nm, grating height 100-300 nm, and grating line width 50-200 nm. The overall superstructure size is 10-1000 µm with circular or square profile.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride nano superstructure
gallium nitride-based laser
Materials described outside the worked examples.
metallic nickel
Ni
chromium
Cr
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.1–100 µm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,591,085 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a gallium nitride nano superstructure according to an embodiment of the present invention.
FIG. 2 is a top view of the gallium nitride nano super- 55 structure of Example 1 of the present invention.
FIG. 3 is a top view of the gallium nitride nano super- structure of Example 2 of the present invention.
FIG. 4 is a schematic flow diagram of a preparation method of a gallium nitride nano superstructure in accor- 60 dance with one embodiment of the present …
FIG. 5b are transmission line and phase difference vs. amplitude ratios, respectively, of the gallium nitride nano superstructure prepared in Example 3 of the …
FIG. 6b are transmission line and phase difference vs. amplitude ratios, respectively, of the gallium B₂ nitride nano superstructure prepared in Example 4 of …
FIGS. 7-10 are schematic illustrations of the structure of gallium nitride-based lasers according to embodiments of the present invention (gallium nitride nano …
FIGS. 9 and 10. The gallium nitride nano superstructure B and the gallium nitride-based laser body A are integrated into a front end of the light-emitting end …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride-based laser, comprising a gallium nitride-based laser body and a gallium nitride nano superstructure wherein the gallium nitride nano superstructure is arranged at a front end of a light-emitting end face of the gallium nitride-based laser body, and an included angle between a wire grid direction of the gallium nitride nano superstructure grating and a polarization direction of the light-emitting of the gallium nitride-based laser body is 45°; wherein the gallium nitride nano superstructure is used for realizing circularly polarized light output of the gallium nitride-based laser, the gallium nitride nano superstruc-ture comprising, from bottom to top: a substrate, a dielectric film layer and a nano-grating structure layer: wherein a grating material of the nano-grating structure layer comprises one of gallium nitride, N-type gallium nitride and P-type gallium nitride, a grating period is in a range of 100 nm⁻²⁸⁰ nm, a grating height is in a range of 100 nm⁻³⁰⁰ nm, and a grating line width is in a range of 50 nm⁻²⁰⁰ nm.
The gallium nitride-based laser according to claim 1, wherein a substrate material of the gallium nitride nano superstructure comprises gallium nitride or sapphire.
The gallium nitride-based laser according to claim 1, wherein a material of the dielectric film layer of the gallium nitride nano superstructure comprises one of gallium nitride, N-type gallium nitride and P-type gallium nitride, and a thickness of the dielectric film layer ranges from 0.1 µm to 100 µm.
The gallium nitride-based laser according to claim 1, wherein the gallium nitride nano superstructure has a size of 10-1000 µm and a shape thereof comprises a circle or a square. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials
A gallium nitride nano superstructure integrated on a gallium nitride-based laser chip to realize circularly polarized light output. The structure comprises a substrate (GaN or sapphire), a dielectric film layer (GaN, N-type GaN, or P-type GaN, 0.1-100 µm thick), and a nano-grating structure layer with grating period 100-280 nm, grating height 100-300 nm, and grating line width 50-200 nm. The overall superstructure size is 10-1000 µm with circular or square profile.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride nano superstructure
gallium nitride-based laser
Materials described outside the worked examples.
metallic nickel
Ni
chromium
Cr
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.1–100 µm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,591,085 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a gallium nitride nano superstructure according to an embodiment of the present invention.
FIG. 2 is a top view of the gallium nitride nano super- 55 structure of Example 1 of the present invention.
FIG. 3 is a top view of the gallium nitride nano super- structure of Example 2 of the present invention.
FIG. 4 is a schematic flow diagram of a preparation method of a gallium nitride nano superstructure in accor- 60 dance with one embodiment of the present …
FIG. 5b are transmission line and phase difference vs. amplitude ratios, respectively, of the gallium nitride nano superstructure prepared in Example 3 of the …
FIG. 6b are transmission line and phase difference vs. amplitude ratios, respectively, of the gallium B₂ nitride nano superstructure prepared in Example 4 of …
FIGS. 7-10 are schematic illustrations of the structure of gallium nitride-based lasers according to embodiments of the present invention (gallium nitride nano …
FIGS. 9 and 10. The gallium nitride nano superstructure B and the gallium nitride-based laser body A are integrated into a front end of the light-emitting end …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride-based laser, comprising a gallium nitride-based laser body and a gallium nitride nano superstructure wherein the gallium nitride nano superstructure is arranged at a front end of a light-emitting end face of the gallium nitride-based laser body, and an included angle between a wire grid direction of the gallium nitride nano superstructure grating and a polarization direction of the light-emitting of the gallium nitride-based laser body is 45°; wherein the gallium nitride nano superstructure is used for realizing circularly polarized light output of the gallium nitride-based laser, the gallium nitride nano superstruc-ture comprising, from bottom to top: a substrate, a dielectric film layer and a nano-grating structure layer: wherein a grating material of the nano-grating structure layer comprises one of gallium nitride, N-type gallium nitride and P-type gallium nitride, a grating period is in a range of 100 nm⁻²⁸⁰ nm, a grating height is in a range of 100 nm⁻³⁰⁰ nm, and a grating line width is in a range of 50 nm⁻²⁰⁰ nm.
The gallium nitride-based laser according to claim 1, wherein a substrate material of the gallium nitride nano superstructure comprises gallium nitride or sapphire.
The gallium nitride-based laser according to claim 1, wherein a material of the dielectric film layer of the gallium nitride nano superstructure comprises one of gallium nitride, N-type gallium nitride and P-type gallium nitride, and a thickness of the dielectric film layer ranges from 0.1 µm to 100 µm.
The gallium nitride-based laser according to claim 1, wherein the gallium nitride nano superstructure has a size of 10-1000 µm and a shape thereof comprises a circle or a square. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
5 materials
A gallium nitride nano superstructure integrated on a gallium nitride-based laser chip to realize circularly polarized light output. The structure comprises a substrate (GaN or sapphire), a dielectric film layer (GaN, N-type GaN, or P-type GaN, 0.1-100 µm thick), and a nano-grating structure layer with grating period 100-280 nm, grating height 100-300 nm, and grating line width 50-200 nm. The overall superstructure size is 10-1000 µm with circular or square profile.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride nano superstructure
gallium nitride-based laser
Materials described outside the worked examples.
metallic nickel
Ni
chromium
Cr
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.1–100 µm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Related documents with shared materials, methods, properties, or citations.
| — |
Thickness | 100–300 nm | — |
Thickness | 50–200 nm | — |
Thickness | 10–1000 µm | — |
Thickness | 30–80 nm | — |
| — |
Thickness | 100–300 nm | — |
Thickness | 50–200 nm | — |
Thickness | 10–1000 µm | — |
Thickness | 30–80 nm | — |
| — |
Thickness | 100–300 nm | — |
Thickness | 50–200 nm | — |
Thickness | 10–1000 µm | — |
Thickness | 30–80 nm | — |
| — |
Thickness | 100–300 nm | — |
Thickness | 50–200 nm | — |
Thickness | 10–1000 µm | — |
Thickness | 30–80 nm | — |
