Patent
US 8,524,012TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE
Troy J. Baker, Benjamin A. Haskell, Paul T. Fini, Steven P. DenBaars et al.
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,524,012Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B (miscut in <010>), and
FIG. 2 is a flowchart illustrating the process steps of the preferred embodiment of the present invention.
FIG. 3 is a photograph of an LED grown by MOCVD on a { 101 1 } GaN template grown by HVPE.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device, comprising: a semi-polar I II -nitride layer, wherein: 5 the semi-polar oriented I II-nitride layer has a surface area of at least 10 mm by 10 mm, the surface area has a semi-polar orientation, and the semi-polar I II -nitride layer has a crystal quality suitable for subsequent growth of a semi-polar device layer structure on the surface area.
The device of claim 1, wherein the crystal quality is such that the surface area has a root mean square surface roughness of no more than 3.5 nanometers over an area of at least 5 micrometers by 5 micrometers.
15 3. The device of claim 1, wherein the crystal quality is such that the surface area has a root mean square surface roughness of no more than 5.5 nanometers over an area of at least micrometers by 5 micrometers.
The device of claim 1, wherein the semi-polar I II -nitride layer comprises 20 Gallium Nitride with the crystal quality characterized by basal plane stacking faults having a density of no more than 2 x 10 5 cm -1.
The device of claim 1, wherein the semi-polar I II -nitride layer comprises Gallium Nitride with the crystal quality characterized by a threading dislocation density of no 25 more than 9 x 10 8 cm -2
The device of claim 1, wherein: the semi-polar I II -nitride layer has the crystal quality characterized by an on-axis rocking curve having a peak for the semi-polar orientation with a full width at half maximum 30 (FWHM) of: no more than 900 arcseconds for rocking towards a [0002] direction, and 17 no more than 750 areseconds, for rocking toward a [1-210] direction, and wherein the rocking curve is measured by X-ray diffraction.
The device of claim 1, wherein the semi-polar I II -nitride is single crystal.
The device of claim 1, wherein the surface area is planar.
The device of claim 1, wherein the surface area has a stable semi-polar orientation.
The device of claim 1, wherein the semi-polar oriented I II -nitride layer and surface area have a { 10-11 } orientation.
The device of claim 1, wherein the semi-polar oriented I II -nitride layer and 15 the surface area have a {10-13} orientation.
The device of claim 1, wherein the semi-polar oriented I II -nitride layer and the surface area have a {10-14} orientation.
20 13. The device of claim 1, wherein the semi-polar oriented I II -nitride layer and the surface area have a { 11 -22 } orientation.
The device of claim 1, wherein the semi-polar oriented I II -nitride layer and the surface area have a {20-2 1} orientation.
The device of claim 1, wherein the semi-polar I II -nitride layer is Gallium Nitride.
The device of claim 1, wherein the semi-polar I II -nitride layer is Aluminum 30 Nitride.
The device of claim 1, wherein the semi-polar I II -nitride layer is heteroepitaxially on a foreign substrate.
The device of claim 1, further comprising a light emitting diode structure deposited on the surface area.
The device of claim 1, wherein the semi-polar I II -nitride layer reduces 15 polarization in the device layer structure grown on the surface area, as compared to a device layer structure grown on a c-plane polar nitride film, the polarization resulting from the device layer structure and the films having dissimilar compositions and therefore different lattice constants.
20 23. A method of fabricating a device, comprising: growing a semi-polar I II -nitride layer, wherein: the semi-polar oriented I II -nitride layer has a surface area of at least 10 mm by 10 mm, the surface area has a semi-polar orientation, and 25 the semi-polar I II -nitride layer is suitable for subsequent growth of a semi-polar device layer structure on the surface area.
The method of claim 23, wherein growing the semi-polar I II -nitride layer comprises: 30 (a) choosing a substrate and an orientation of a surface of the substrate based on a desired semi-polar orientation for the semi-polar I II -nitride layer; 19 (b) loading the substrate in a reactor; (c) ramping a temperature of the reactor; and (d) during the ramping, flowing a combination of gases over the surface of the substrate, wherein: 5 (i) the combination of gases comprises one or more of ammonia, hydrogen, and nitrogen; and (ii) the combination of gases is selected based on the substrate and the desired semi- polar orientation; and (e) when a growth temperature is reached, growing the semi-polar I II -nitride layer on 10 the surface of the substrate, using a vapor phase epitaxy or vapor deposition, wherein: a growth surface of the semi-polar I II -nitride layer is planar and stable, and the growth surface of the semi-polar nitride film has the surface area of at least 10 mm x 10 mm parallel to the surface of the substrate.
30 20 26. A device structure, comprising: a semi-polar I II -nitride layer, wherein: the semipolar oriented I II -nitride layer has a surface area of at least 10 mm by 10 mm, 5 the surface area has a semi-polar orientation, and a I II -nitride light emitting diode (LED) structure deposited on the surface area.
Layer stacks claimed or described, ordered top of device to substrate.
semi-polar III-nitride template layer
semi-polar III-nitride LED device structure
Materials described outside the worked examples.
semi-polar III-nitride
(Ga,Al,In,B)N
Gallium Nitride
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Surface Roughness Rms | 3.5 nm | (Ga,Al,In,B)N |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,524,012Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B (miscut in <010>), and
FIG. 2 is a flowchart illustrating the process steps of the preferred embodiment of the present invention.
FIG. 3 is a photograph of an LED grown by MOCVD on a { 101 1 } GaN template grown by HVPE.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device, comprising: a semi-polar I II -nitride layer, wherein: 5 the semi-polar oriented I II-nitride layer has a surface area of at least 10 mm by 10 mm, the surface area has a semi-polar orientation, and the semi-polar I II -nitride layer has a crystal quality suitable for subsequent growth of a semi-polar device layer structure on the surface area.
The device of claim 1, wherein the crystal quality is such that the surface area has a root mean square surface roughness of no more than 3.5 nanometers over an area of at least 5 micrometers by 5 micrometers.
15 3. The device of claim 1, wherein the crystal quality is such that the surface area has a root mean square surface roughness of no more than 5.5 nanometers over an area of at least micrometers by 5 micrometers.
The device of claim 1, wherein the semi-polar I II -nitride layer comprises 20 Gallium Nitride with the crystal quality characterized by basal plane stacking faults having a density of no more than 2 x 10 5 cm -1.
The device of claim 1, wherein the semi-polar I II -nitride layer comprises Gallium Nitride with the crystal quality characterized by a threading dislocation density of no 25 more than 9 x 10 8 cm -2
The device of claim 1, wherein: the semi-polar I II -nitride layer has the crystal quality characterized by an on-axis rocking curve having a peak for the semi-polar orientation with a full width at half maximum 30 (FWHM) of: no more than 900 arcseconds for rocking towards a [0002] direction, and 17 no more than 750 areseconds, for rocking toward a [1-210] direction, and wherein the rocking curve is measured by X-ray diffraction.
The device of claim 1, wherein the semi-polar I II -nitride is single crystal.
The device of claim 1, wherein the surface area is planar.
The device of claim 1, wherein the surface area has a stable semi-polar orientation.
The device of claim 1, wherein the semi-polar oriented I II -nitride layer and surface area have a { 10-11 } orientation.
The device of claim 1, wherein the semi-polar oriented I II -nitride layer and 15 the surface area have a {10-13} orientation.
The device of claim 1, wherein the semi-polar oriented I II -nitride layer and the surface area have a {10-14} orientation.
20 13. The device of claim 1, wherein the semi-polar oriented I II -nitride layer and the surface area have a { 11 -22 } orientation.
The device of claim 1, wherein the semi-polar oriented I II -nitride layer and the surface area have a {20-2 1} orientation.
The device of claim 1, wherein the semi-polar I II -nitride layer is Gallium Nitride.
The device of claim 1, wherein the semi-polar I II -nitride layer is Aluminum 30 Nitride.
The device of claim 1, wherein the semi-polar I II -nitride layer is heteroepitaxially on a foreign substrate.
The device of claim 1, further comprising a light emitting diode structure deposited on the surface area.
The device of claim 1, wherein the semi-polar I II -nitride layer reduces 15 polarization in the device layer structure grown on the surface area, as compared to a device layer structure grown on a c-plane polar nitride film, the polarization resulting from the device layer structure and the films having dissimilar compositions and therefore different lattice constants.
20 23. A method of fabricating a device, comprising: growing a semi-polar I II -nitride layer, wherein: the semi-polar oriented I II -nitride layer has a surface area of at least 10 mm by 10 mm, the surface area has a semi-polar orientation, and 25 the semi-polar I II -nitride layer is suitable for subsequent growth of a semi-polar device layer structure on the surface area.
The method of claim 23, wherein growing the semi-polar I II -nitride layer comprises: 30 (a) choosing a substrate and an orientation of a surface of the substrate based on a desired semi-polar orientation for the semi-polar I II -nitride layer; 19 (b) loading the substrate in a reactor; (c) ramping a temperature of the reactor; and (d) during the ramping, flowing a combination of gases over the surface of the substrate, wherein: 5 (i) the combination of gases comprises one or more of ammonia, hydrogen, and nitrogen; and (ii) the combination of gases is selected based on the substrate and the desired semi- polar orientation; and (e) when a growth temperature is reached, growing the semi-polar I II -nitride layer on 10 the surface of the substrate, using a vapor phase epitaxy or vapor deposition, wherein: a growth surface of the semi-polar I II -nitride layer is planar and stable, and the growth surface of the semi-polar nitride film has the surface area of at least 10 mm x 10 mm parallel to the surface of the substrate.
30 20 26. A device structure, comprising: a semi-polar I II -nitride layer, wherein: the semipolar oriented I II -nitride layer has a surface area of at least 10 mm by 10 mm, 5 the surface area has a semi-polar orientation, and a I II -nitride light emitting diode (LED) structure deposited on the surface area.
Layer stacks claimed or described, ordered top of device to substrate.
semi-polar III-nitride template layer
semi-polar III-nitride LED device structure
Materials described outside the worked examples.
semi-polar III-nitride
(Ga,Al,In,B)N
Gallium Nitride
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Surface Roughness Rms | 3.5 nm | (Ga,Al,In,B)N |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,524,012Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B (miscut in <010>), and
FIG. 2 is a flowchart illustrating the process steps of the preferred embodiment of the present invention.
FIG. 3 is a photograph of an LED grown by MOCVD on a { 101 1 } GaN template grown by HVPE.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device, comprising: a semi-polar I II -nitride layer, wherein: 5 the semi-polar oriented I II-nitride layer has a surface area of at least 10 mm by 10 mm, the surface area has a semi-polar orientation, and the semi-polar I II -nitride layer has a crystal quality suitable for subsequent growth of a semi-polar device layer structure on the surface area.
The device of claim 1, wherein the crystal quality is such that the surface area has a root mean square surface roughness of no more than 3.5 nanometers over an area of at least 5 micrometers by 5 micrometers.
15 3. The device of claim 1, wherein the crystal quality is such that the surface area has a root mean square surface roughness of no more than 5.5 nanometers over an area of at least micrometers by 5 micrometers.
The device of claim 1, wherein the semi-polar I II -nitride layer comprises 20 Gallium Nitride with the crystal quality characterized by basal plane stacking faults having a density of no more than 2 x 10 5 cm -1.
The device of claim 1, wherein the semi-polar I II -nitride layer comprises Gallium Nitride with the crystal quality characterized by a threading dislocation density of no 25 more than 9 x 10 8 cm -2
The device of claim 1, wherein: the semi-polar I II -nitride layer has the crystal quality characterized by an on-axis rocking curve having a peak for the semi-polar orientation with a full width at half maximum 30 (FWHM) of: no more than 900 arcseconds for rocking towards a [0002] direction, and 17 no more than 750 areseconds, for rocking toward a [1-210] direction, and wherein the rocking curve is measured by X-ray diffraction.
The device of claim 1, wherein the semi-polar I II -nitride is single crystal.
The device of claim 1, wherein the surface area is planar.
The device of claim 1, wherein the surface area has a stable semi-polar orientation.
The device of claim 1, wherein the semi-polar oriented I II -nitride layer and surface area have a { 10-11 } orientation.
The device of claim 1, wherein the semi-polar oriented I II -nitride layer and 15 the surface area have a {10-13} orientation.
The device of claim 1, wherein the semi-polar oriented I II -nitride layer and the surface area have a {10-14} orientation.
20 13. The device of claim 1, wherein the semi-polar oriented I II -nitride layer and the surface area have a { 11 -22 } orientation.
The device of claim 1, wherein the semi-polar oriented I II -nitride layer and the surface area have a {20-2 1} orientation.
The device of claim 1, wherein the semi-polar I II -nitride layer is Gallium Nitride.
The device of claim 1, wherein the semi-polar I II -nitride layer is Aluminum 30 Nitride.
The device of claim 1, wherein the semi-polar I II -nitride layer is heteroepitaxially on a foreign substrate.
The device of claim 1, further comprising a light emitting diode structure deposited on the surface area.
The device of claim 1, wherein the semi-polar I II -nitride layer reduces 15 polarization in the device layer structure grown on the surface area, as compared to a device layer structure grown on a c-plane polar nitride film, the polarization resulting from the device layer structure and the films having dissimilar compositions and therefore different lattice constants.
20 23. A method of fabricating a device, comprising: growing a semi-polar I II -nitride layer, wherein: the semi-polar oriented I II -nitride layer has a surface area of at least 10 mm by 10 mm, the surface area has a semi-polar orientation, and 25 the semi-polar I II -nitride layer is suitable for subsequent growth of a semi-polar device layer structure on the surface area.
The method of claim 23, wherein growing the semi-polar I II -nitride layer comprises: 30 (a) choosing a substrate and an orientation of a surface of the substrate based on a desired semi-polar orientation for the semi-polar I II -nitride layer; 19 (b) loading the substrate in a reactor; (c) ramping a temperature of the reactor; and (d) during the ramping, flowing a combination of gases over the surface of the substrate, wherein: 5 (i) the combination of gases comprises one or more of ammonia, hydrogen, and nitrogen; and (ii) the combination of gases is selected based on the substrate and the desired semi- polar orientation; and (e) when a growth temperature is reached, growing the semi-polar I II -nitride layer on 10 the surface of the substrate, using a vapor phase epitaxy or vapor deposition, wherein: a growth surface of the semi-polar I II -nitride layer is planar and stable, and the growth surface of the semi-polar nitride film has the surface area of at least 10 mm x 10 mm parallel to the surface of the substrate.
30 20 26. A device structure, comprising: a semi-polar I II -nitride layer, wherein: the semipolar oriented I II -nitride layer has a surface area of at least 10 mm by 10 mm, 5 the surface area has a semi-polar orientation, and a I II -nitride light emitting diode (LED) structure deposited on the surface area.
Layer stacks claimed or described, ordered top of device to substrate.
semi-polar III-nitride template layer
semi-polar III-nitride LED device structure
Materials described outside the worked examples.
semi-polar III-nitride
(Ga,Al,In,B)N
Gallium Nitride
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Surface Roughness Rms | 3.5 nm | (Ga,Al,In,B)N |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,524,012Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B (miscut in <010>), and
FIG. 2 is a flowchart illustrating the process steps of the preferred embodiment of the present invention.
FIG. 3 is a photograph of an LED grown by MOCVD on a { 101 1 } GaN template grown by HVPE.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device, comprising: a semi-polar I II -nitride layer, wherein: 5 the semi-polar oriented I II-nitride layer has a surface area of at least 10 mm by 10 mm, the surface area has a semi-polar orientation, and the semi-polar I II -nitride layer has a crystal quality suitable for subsequent growth of a semi-polar device layer structure on the surface area.
The device of claim 1, wherein the crystal quality is such that the surface area has a root mean square surface roughness of no more than 3.5 nanometers over an area of at least 5 micrometers by 5 micrometers.
15 3. The device of claim 1, wherein the crystal quality is such that the surface area has a root mean square surface roughness of no more than 5.5 nanometers over an area of at least micrometers by 5 micrometers.
The device of claim 1, wherein the semi-polar I II -nitride layer comprises 20 Gallium Nitride with the crystal quality characterized by basal plane stacking faults having a density of no more than 2 x 10 5 cm -1.
The device of claim 1, wherein the semi-polar I II -nitride layer comprises Gallium Nitride with the crystal quality characterized by a threading dislocation density of no 25 more than 9 x 10 8 cm -2
The device of claim 1, wherein: the semi-polar I II -nitride layer has the crystal quality characterized by an on-axis rocking curve having a peak for the semi-polar orientation with a full width at half maximum 30 (FWHM) of: no more than 900 arcseconds for rocking towards a [0002] direction, and 17 no more than 750 areseconds, for rocking toward a [1-210] direction, and wherein the rocking curve is measured by X-ray diffraction.
The device of claim 1, wherein the semi-polar I II -nitride is single crystal.
The device of claim 1, wherein the surface area is planar.
The device of claim 1, wherein the surface area has a stable semi-polar orientation.
The device of claim 1, wherein the semi-polar oriented I II -nitride layer and surface area have a { 10-11 } orientation.
The device of claim 1, wherein the semi-polar oriented I II -nitride layer and 15 the surface area have a {10-13} orientation.
The device of claim 1, wherein the semi-polar oriented I II -nitride layer and the surface area have a {10-14} orientation.
20 13. The device of claim 1, wherein the semi-polar oriented I II -nitride layer and the surface area have a { 11 -22 } orientation.
The device of claim 1, wherein the semi-polar oriented I II -nitride layer and the surface area have a {20-2 1} orientation.
The device of claim 1, wherein the semi-polar I II -nitride layer is Gallium Nitride.
The device of claim 1, wherein the semi-polar I II -nitride layer is Aluminum 30 Nitride.
The device of claim 1, wherein the semi-polar I II -nitride layer is heteroepitaxially on a foreign substrate.
The device of claim 1, further comprising a light emitting diode structure deposited on the surface area.
The device of claim 1, wherein the semi-polar I II -nitride layer reduces 15 polarization in the device layer structure grown on the surface area, as compared to a device layer structure grown on a c-plane polar nitride film, the polarization resulting from the device layer structure and the films having dissimilar compositions and therefore different lattice constants.
20 23. A method of fabricating a device, comprising: growing a semi-polar I II -nitride layer, wherein: the semi-polar oriented I II -nitride layer has a surface area of at least 10 mm by 10 mm, the surface area has a semi-polar orientation, and 25 the semi-polar I II -nitride layer is suitable for subsequent growth of a semi-polar device layer structure on the surface area.
The method of claim 23, wherein growing the semi-polar I II -nitride layer comprises: 30 (a) choosing a substrate and an orientation of a surface of the substrate based on a desired semi-polar orientation for the semi-polar I II -nitride layer; 19 (b) loading the substrate in a reactor; (c) ramping a temperature of the reactor; and (d) during the ramping, flowing a combination of gases over the surface of the substrate, wherein: 5 (i) the combination of gases comprises one or more of ammonia, hydrogen, and nitrogen; and (ii) the combination of gases is selected based on the substrate and the desired semi- polar orientation; and (e) when a growth temperature is reached, growing the semi-polar I II -nitride layer on 10 the surface of the substrate, using a vapor phase epitaxy or vapor deposition, wherein: a growth surface of the semi-polar I II -nitride layer is planar and stable, and the growth surface of the semi-polar nitride film has the surface area of at least 10 mm x 10 mm parallel to the surface of the substrate.
30 20 26. A device structure, comprising: a semi-polar I II -nitride layer, wherein: the semipolar oriented I II -nitride layer has a surface area of at least 10 mm by 10 mm, 5 the surface area has a semi-polar orientation, and a I II -nitride light emitting diode (LED) structure deposited on the surface area.
Layer stacks claimed or described, ordered top of device to substrate.
semi-polar III-nitride template layer
semi-polar III-nitride LED device structure
Materials described outside the worked examples.
semi-polar III-nitride
(Ga,Al,In,B)N
Gallium Nitride
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Surface Roughness Rms | 3.5 nm | (Ga,Al,In,B)N |
Related documents with shared materials, methods, properties, or citations.
Aluminum Nitride
AlN
sapphire
Al₂O₃
spinel
MgAl₂O₄
| 5.5 nm |
(Ga,Al,In,B)N |
Basal Plane Stacking Fault Density | 200000 cm⁻¹ | GaN |
Threading Dislocation Density | 900000000 cm⁻² | GaN |
Xrd Rocking Curve Fwhm | 900 arcseconds | (Ga,Al,In,B)N |
Xrd Rocking Curve Fwhm | 750 arcseconds | (Ga,Al,In,B)N |
Pressure | 10–1000 torr | — |
Pressure | 62.5–760 torr | — |
Duration | 20–60 minutes | — |
Pressure | ≥ 0.09 torr | — |
Thickness | ≥ 10 mm | — |
Thickness | ≤ 3.5 nm | — |
Thickness | ≤ 5.5 nm | — |
Thickness | ≥ 3.5 nm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 5.5 nm | — |
Aluminum Nitride
AlN
sapphire
Al₂O₃
spinel
MgAl₂O₄
| 5.5 nm |
(Ga,Al,In,B)N |
Basal Plane Stacking Fault Density | 200000 cm⁻¹ | GaN |
Threading Dislocation Density | 900000000 cm⁻² | GaN |
Xrd Rocking Curve Fwhm | 900 arcseconds | (Ga,Al,In,B)N |
Xrd Rocking Curve Fwhm | 750 arcseconds | (Ga,Al,In,B)N |
Pressure | 10–1000 torr | — |
Pressure | 62.5–760 torr | — |
Duration | 20–60 minutes | — |
Pressure | ≥ 0.09 torr | — |
Thickness | ≥ 10 mm | — |
Thickness | ≤ 3.5 nm | — |
Thickness | ≤ 5.5 nm | — |
Thickness | ≥ 3.5 nm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 5.5 nm | — |
Aluminum Nitride
AlN
sapphire
Al₂O₃
spinel
MgAl₂O₄
| 5.5 nm |
(Ga,Al,In,B)N |
Basal Plane Stacking Fault Density | 200000 cm⁻¹ | GaN |
Threading Dislocation Density | 900000000 cm⁻² | GaN |
Xrd Rocking Curve Fwhm | 900 arcseconds | (Ga,Al,In,B)N |
Xrd Rocking Curve Fwhm | 750 arcseconds | (Ga,Al,In,B)N |
Pressure | 10–1000 torr | — |
Pressure | 62.5–760 torr | — |
Duration | 20–60 minutes | — |
Pressure | ≥ 0.09 torr | — |
Thickness | ≥ 10 mm | — |
Thickness | ≤ 3.5 nm | — |
Thickness | ≤ 5.5 nm | — |
Thickness | ≥ 3.5 nm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 5.5 nm | — |
Aluminum Nitride
AlN
sapphire
Al₂O₃
spinel
MgAl₂O₄
| 5.5 nm |
(Ga,Al,In,B)N |
Basal Plane Stacking Fault Density | 200000 cm⁻¹ | GaN |
Threading Dislocation Density | 900000000 cm⁻² | GaN |
Xrd Rocking Curve Fwhm | 900 arcseconds | (Ga,Al,In,B)N |
Xrd Rocking Curve Fwhm | 750 arcseconds | (Ga,Al,In,B)N |
Pressure | 10–1000 torr | — |
Pressure | 62.5–760 torr | — |
Duration | 20–60 minutes | — |
Pressure | ≥ 0.09 torr | — |
Thickness | ≥ 10 mm | — |
Thickness | ≤ 3.5 nm | — |
Thickness | ≤ 5.5 nm | — |
Thickness | ≥ 3.5 nm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 5.5 nm | — |