Patent
Atlas literature
Patent
US 11,984,533 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2 illustrates contour lines of bandgaps (Eg [eV]) with respect to the compositions of Al and In and degrees of lattice unconformity (da/a) with respect to …
FIG. 3A.
FIG. 4 schematically illustrates a cross-sectional configu- ration of a light emitting device (light emitting device 2) 25 according to a modification example …
FIG. 5 schematically illustrates a cross-sectional configu- ration of a light emitting device (light emitting device 3) B₂ according to a modification example …
FIG. 6 schematically illustrates a cross-sectional configu- ration of a light emitting device (light emitting device 4) according to a modification example …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A light emitting device comprising: a first layer including Alx2Inx1Ga(1-x1-x2) N (0<x1<1, 0≤x2<1); a second layer that is provided on the first layer and includes Aly2Iny1Ga(1-y1-y2) N (0<y1<1, 0≤y2<1); that is lattice relaxed with respect to the first layer; and a third layer that is provided on the second layer, includes Alz2Inz1Ga(1-z1-z2) N (0<z1<1, 0≤z2<1) that is lattice relaxed with respect to the second layer, and includes an active layer, wherein a lattice constant aGAN of GaN in an in-plane direction, a lattice constant a1 of the first layer in an in-plane direction, a lattice constant a2 of the second layer in an in-plane direction, and a lattice constant a3 of the third layer in an in-plane direction have a relationship of aGAN <a2<a1, a3.
The light emitting device according to claim 1, wherein the lattice constant a1 of the first layer in the in-plane direction and the lattice constant a2 of the second layer in the in-plane direction satisfy a relationship of (a2−a1)/a1<− 0.06%, the lattice constant a2 of the second layer in the in-plane direction and the lattice constant a3 of the third layer in the in-plane direction satisfy a relationship of (a3−a2)/a2 >0.06%, and the lattice constant a1 of the first layer in the in-plane direction and the lattice constant aGAN of GaN in the in-plane direction satisfy a relationship of (a1−aGAN)/aGAN >0.33%.
The light emitting device according to claim 1, wherein the third layer includes a plurality of layers including the active layer, and the active layer and the plurality of layers all have the lattice constant a3 in the in-plane direction.
The light emitting device according to claim 1, wherein the second layer includes a plurality of layers each having 15 16 the lattice constant a2 in the in-plane direction, and a total thickness of the plurality of layers having the lattice constant a2 is equal to or more than 100 nm.
The light emitting device according to claim 1, wherein the third layer includes a plurality of layers each having the lattice constant a3 in the in-plane direction, and a total thickness of the plurality of layers having the lattice constant a3 is equal to or more than 100 nm.
The light emitting device according to claim 1, wherein the second layer includes a cladding layer, and the third layer includes a light guide layer.
The light emitting device according to claim 1, further comprising a substrate, wherein the first layer, the second layer, and the third layer are provided on the substrate in this order.
Layer stacks claimed or described, ordered top of device to substrate.
light emitting device (LED/LD) with InAlGaN layers
Materials described outside the worked examples.
Alx2Inx1Ga(1-x1-x2)N first layer
Alx2Inx1Ga(1-x1-x2)N
Aly2Iny1Ga(1-y1-y2)N second layer
Aly2Iny1Ga(1-y1-y2)N
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 illustrates contour lines of bandgaps (Eg [eV]) with respect to the compositions of Al and In and degrees of lattice unconformity (da/a) with respect to …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 1 nm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Cited non-patent literature · 1
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,984,533 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2 illustrates contour lines of bandgaps (Eg [eV]) with respect to the compositions of Al and In and degrees of lattice unconformity (da/a) with respect to …
FIG. 3A.
FIG. 4 schematically illustrates a cross-sectional configu- ration of a light emitting device (light emitting device 2) 25 according to a modification example …
FIG. 5 schematically illustrates a cross-sectional configu- ration of a light emitting device (light emitting device 3) B₂ according to a modification example …
FIG. 6 schematically illustrates a cross-sectional configu- ration of a light emitting device (light emitting device 4) according to a modification example …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A light emitting device comprising: a first layer including Alx2Inx1Ga(1-x1-x2) N (0<x1<1, 0≤x2<1); a second layer that is provided on the first layer and includes Aly2Iny1Ga(1-y1-y2) N (0<y1<1, 0≤y2<1); that is lattice relaxed with respect to the first layer; and a third layer that is provided on the second layer, includes Alz2Inz1Ga(1-z1-z2) N (0<z1<1, 0≤z2<1) that is lattice relaxed with respect to the second layer, and includes an active layer, wherein a lattice constant aGAN of GaN in an in-plane direction, a lattice constant a1 of the first layer in an in-plane direction, a lattice constant a2 of the second layer in an in-plane direction, and a lattice constant a3 of the third layer in an in-plane direction have a relationship of aGAN <a2<a1, a3.
The light emitting device according to claim 1, wherein the lattice constant a1 of the first layer in the in-plane direction and the lattice constant a2 of the second layer in the in-plane direction satisfy a relationship of (a2−a1)/a1<− 0.06%, the lattice constant a2 of the second layer in the in-plane direction and the lattice constant a3 of the third layer in the in-plane direction satisfy a relationship of (a3−a2)/a2 >0.06%, and the lattice constant a1 of the first layer in the in-plane direction and the lattice constant aGAN of GaN in the in-plane direction satisfy a relationship of (a1−aGAN)/aGAN >0.33%.
The light emitting device according to claim 1, wherein the third layer includes a plurality of layers including the active layer, and the active layer and the plurality of layers all have the lattice constant a3 in the in-plane direction.
The light emitting device according to claim 1, wherein the second layer includes a plurality of layers each having 15 16 the lattice constant a2 in the in-plane direction, and a total thickness of the plurality of layers having the lattice constant a2 is equal to or more than 100 nm.
The light emitting device according to claim 1, wherein the third layer includes a plurality of layers each having the lattice constant a3 in the in-plane direction, and a total thickness of the plurality of layers having the lattice constant a3 is equal to or more than 100 nm.
The light emitting device according to claim 1, wherein the second layer includes a cladding layer, and the third layer includes a light guide layer.
The light emitting device according to claim 1, further comprising a substrate, wherein the first layer, the second layer, and the third layer are provided on the substrate in this order.
Layer stacks claimed or described, ordered top of device to substrate.
light emitting device (LED/LD) with InAlGaN layers
Materials described outside the worked examples.
Alx2Inx1Ga(1-x1-x2)N first layer
Alx2Inx1Ga(1-x1-x2)N
Aly2Iny1Ga(1-y1-y2)N second layer
Aly2Iny1Ga(1-y1-y2)N
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 illustrates contour lines of bandgaps (Eg [eV]) with respect to the compositions of Al and In and degrees of lattice unconformity (da/a) with respect to …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 1 nm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Cited non-patent literature · 1
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,984,533 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2 illustrates contour lines of bandgaps (Eg [eV]) with respect to the compositions of Al and In and degrees of lattice unconformity (da/a) with respect to …
FIG. 3A.
FIG. 4 schematically illustrates a cross-sectional configu- ration of a light emitting device (light emitting device 2) 25 according to a modification example …
FIG. 5 schematically illustrates a cross-sectional configu- ration of a light emitting device (light emitting device 3) B₂ according to a modification example …
FIG. 6 schematically illustrates a cross-sectional configu- ration of a light emitting device (light emitting device 4) according to a modification example …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A light emitting device comprising: a first layer including Alx2Inx1Ga(1-x1-x2) N (0<x1<1, 0≤x2<1); a second layer that is provided on the first layer and includes Aly2Iny1Ga(1-y1-y2) N (0<y1<1, 0≤y2<1); that is lattice relaxed with respect to the first layer; and a third layer that is provided on the second layer, includes Alz2Inz1Ga(1-z1-z2) N (0<z1<1, 0≤z2<1) that is lattice relaxed with respect to the second layer, and includes an active layer, wherein a lattice constant aGAN of GaN in an in-plane direction, a lattice constant a1 of the first layer in an in-plane direction, a lattice constant a2 of the second layer in an in-plane direction, and a lattice constant a3 of the third layer in an in-plane direction have a relationship of aGAN <a2<a1, a3.
The light emitting device according to claim 1, wherein the lattice constant a1 of the first layer in the in-plane direction and the lattice constant a2 of the second layer in the in-plane direction satisfy a relationship of (a2−a1)/a1<− 0.06%, the lattice constant a2 of the second layer in the in-plane direction and the lattice constant a3 of the third layer in the in-plane direction satisfy a relationship of (a3−a2)/a2 >0.06%, and the lattice constant a1 of the first layer in the in-plane direction and the lattice constant aGAN of GaN in the in-plane direction satisfy a relationship of (a1−aGAN)/aGAN >0.33%.
The light emitting device according to claim 1, wherein the third layer includes a plurality of layers including the active layer, and the active layer and the plurality of layers all have the lattice constant a3 in the in-plane direction.
The light emitting device according to claim 1, wherein the second layer includes a plurality of layers each having 15 16 the lattice constant a2 in the in-plane direction, and a total thickness of the plurality of layers having the lattice constant a2 is equal to or more than 100 nm.
The light emitting device according to claim 1, wherein the third layer includes a plurality of layers each having the lattice constant a3 in the in-plane direction, and a total thickness of the plurality of layers having the lattice constant a3 is equal to or more than 100 nm.
The light emitting device according to claim 1, wherein the second layer includes a cladding layer, and the third layer includes a light guide layer.
The light emitting device according to claim 1, further comprising a substrate, wherein the first layer, the second layer, and the third layer are provided on the substrate in this order.
Layer stacks claimed or described, ordered top of device to substrate.
light emitting device (LED/LD) with InAlGaN layers
Materials described outside the worked examples.
Alx2Inx1Ga(1-x1-x2)N first layer
Alx2Inx1Ga(1-x1-x2)N
Aly2Iny1Ga(1-y1-y2)N second layer
Aly2Iny1Ga(1-y1-y2)N
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 illustrates contour lines of bandgaps (Eg [eV]) with respect to the compositions of Al and In and degrees of lattice unconformity (da/a) with respect to …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 1 nm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Cited non-patent literature · 1
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,984,533 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2 illustrates contour lines of bandgaps (Eg [eV]) with respect to the compositions of Al and In and degrees of lattice unconformity (da/a) with respect to …
FIG. 3A.
FIG. 4 schematically illustrates a cross-sectional configu- ration of a light emitting device (light emitting device 2) 25 according to a modification example …
FIG. 5 schematically illustrates a cross-sectional configu- ration of a light emitting device (light emitting device 3) B₂ according to a modification example …
FIG. 6 schematically illustrates a cross-sectional configu- ration of a light emitting device (light emitting device 4) according to a modification example …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A light emitting device comprising: a first layer including Alx2Inx1Ga(1-x1-x2) N (0<x1<1, 0≤x2<1); a second layer that is provided on the first layer and includes Aly2Iny1Ga(1-y1-y2) N (0<y1<1, 0≤y2<1); that is lattice relaxed with respect to the first layer; and a third layer that is provided on the second layer, includes Alz2Inz1Ga(1-z1-z2) N (0<z1<1, 0≤z2<1) that is lattice relaxed with respect to the second layer, and includes an active layer, wherein a lattice constant aGAN of GaN in an in-plane direction, a lattice constant a1 of the first layer in an in-plane direction, a lattice constant a2 of the second layer in an in-plane direction, and a lattice constant a3 of the third layer in an in-plane direction have a relationship of aGAN <a2<a1, a3.
The light emitting device according to claim 1, wherein the lattice constant a1 of the first layer in the in-plane direction and the lattice constant a2 of the second layer in the in-plane direction satisfy a relationship of (a2−a1)/a1<− 0.06%, the lattice constant a2 of the second layer in the in-plane direction and the lattice constant a3 of the third layer in the in-plane direction satisfy a relationship of (a3−a2)/a2 >0.06%, and the lattice constant a1 of the first layer in the in-plane direction and the lattice constant aGAN of GaN in the in-plane direction satisfy a relationship of (a1−aGAN)/aGAN >0.33%.
The light emitting device according to claim 1, wherein the third layer includes a plurality of layers including the active layer, and the active layer and the plurality of layers all have the lattice constant a3 in the in-plane direction.
The light emitting device according to claim 1, wherein the second layer includes a plurality of layers each having 15 16 the lattice constant a2 in the in-plane direction, and a total thickness of the plurality of layers having the lattice constant a2 is equal to or more than 100 nm.
The light emitting device according to claim 1, wherein the third layer includes a plurality of layers each having the lattice constant a3 in the in-plane direction, and a total thickness of the plurality of layers having the lattice constant a3 is equal to or more than 100 nm.
The light emitting device according to claim 1, wherein the second layer includes a cladding layer, and the third layer includes a light guide layer.
The light emitting device according to claim 1, further comprising a substrate, wherein the first layer, the second layer, and the third layer are provided on the substrate in this order.
Layer stacks claimed or described, ordered top of device to substrate.
light emitting device (LED/LD) with InAlGaN layers
Materials described outside the worked examples.
Alx2Inx1Ga(1-x1-x2)N first layer
Alx2Inx1Ga(1-x1-x2)N
Aly2Iny1Ga(1-y1-y2)N second layer
Aly2Iny1Ga(1-y1-y2)N
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 illustrates contour lines of bandgaps (Eg [eV]) with respect to the compositions of Al and In and degrees of lattice unconformity (da/a) with respect to …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 1 nm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Cited non-patent literature · 1
Related documents with shared materials, methods, properties, or citations.
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