Patent
US 11,575,071OXYGEN CONTROLLED PVD ALN BUFFER FOR GAN-BASED OPTOELECTRONIC AND ELECTRONIC DEVICES
Mingwei Zhu, Nag B. Patibandla, Rongjun Wang, Daniel Lee Diehl et al.
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,575,071Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates a benchmark cluster tool schematic, a benchmark LED structure, and a benchmark time-to-deposition plot, in accordance with one or more embodiments of the present invention.
Figure 2A illustrates a cluster tool schematic and a corresponding temperature versus time plot for LED structure fabrication, in accordance with an embodiment of the present invention.
Figure 2B illustrates a light-emitting diode (LED) structure and a corresponding time-to-deposition plot, in accordance with an embodiment of the present invention.
Figures 3A-3C illustrate cross-sectional views of a process kit for a PVD chamber, in accordance with an embodiment of the present invention.
Figure 3D illustrates a cross-sectional view of a power delivery source for a PVD chamber, in accordance with an embodiment of the present invention.
Figure 4 is a schematic cross-sectional view of a MOCVD chamber suitable for the fabrication of group II I-nitride materials, in accordance with an embodiment of the present invention.
Figure 5 is a schematic cross-sectional view of a HVPE chamber suitable for the fabrication of group II I-nitride materials, in accordance with an embodiment of the present invention.
Figure 6 illustrates a block diagram of an exemplary computer system, in accordance with an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A non-transitory machine-accessible storage medium having instructions stored thereon which cause a data processing system to perform a method, the method comprising: forming an A l N layer above a substrate; and incorporating oxygen into the A l N layer including at an interface between the Al N layer and the substrate by flowing an oxygen-containing gas during forming the A lN layer, wherein the flowing the oxygen-containing gas begins after the beginning of forming the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 1, wherein forming the A l N layer comprises reacting an aluminum-containing target with a nitrogen-containing gas. Original
The non-transitory machine-accessible storage medium of claim 1, wherein forming the A l N layer comprises reacting an aluminum-containing target with a plasma based on a nitrogen-containing gas. Original
The non-transitory machine-accessible storage medium of claim 1, wherein incorporating oxygen into the A l N layer comprises incorporating a concentration of oxygen approximately in the range of 1E₁₈ to 1E₂₃ cm⁻³ into the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 1, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a bulk portion of the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 1, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a surface of the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 1, the method further comprising: forming a GaN layer on the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 1, wherein the substrate is selected from the group consisting of sapphire, Si, SiC, Si on diamond, ZnO, LiA lO 2, MgO, GaAs, Copper and W. Original
A non-transitory machine-accessible storage medium having instructions stored thereon which cause a data processing system to perform a method of forming an aluminum nitride (A i N) buffer layer for GaN-based optoelectronic or electronic devices, the method comprising: reactive sputtering an A l N layer above a substrate, the reactive sputtering comprising reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen- containing gas; and incorporating oxygen into the A l N layer including at an interface between the Al N layer and the substrate by flowing of the oxygen-containing gas subsequent to beginning reacting the aluminum-containing target with the nitrogen-containing gas or the plasma based on the nitrogen-containing gas. Original
The non-transitory machine-accessible storage medium of claim 9, wherein incorporating oxygen into the A l N layer comprises incorporating a concentration of oxygen approximately in the range of 1E₁₈ to 1E₂₃ cm⁻³ into the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 9, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a bulk portion of the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 9, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a surface of the A l N layer. Original
A non-transitory machine-accessible storage medium having instructions stored thereon which cause a data processing system to perform a method of forming an aluminum nitride (A l N) buffer layer for GaN-based optoelectronic or electronic devices, the method comprising: reactive sputtering an A l N layer above a substrate, the reactive sputtering comprising reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen- containing gas; and incorporating oxygen into the A l N layer including at an interface between the Al N layer and the substrate by flowing an oxygen-containing gas subsequent to beginning reacting the aluminum-containing target with the nitrogen-containing gas or the plasma based on the nitrogen-containing gas, wherein incorporating oxygen into the Al N layer comprises incorporating a concentration of oxygen approximately in the range of 1E₁₈ to 1E₂₃ cm⁻³ into the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 13, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a bulk portion of the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 13, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a surface of the A l N layer. Original
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based optoelectronic or electronic device with PVD AlN buffer
LED device with PVD AlN buffer
Materials described outside the worked examples.
aluminum nitride buffer layer
AlN
oxygen dopant
O
gallium nitride layer
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
AlN XRD (002) FWHM | — | AlN |
AlN XRD (002) FWHM range | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,575,071Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates a benchmark cluster tool schematic, a benchmark LED structure, and a benchmark time-to-deposition plot, in accordance with one or more embodiments of the present invention.
Figure 2A illustrates a cluster tool schematic and a corresponding temperature versus time plot for LED structure fabrication, in accordance with an embodiment of the present invention.
Figure 2B illustrates a light-emitting diode (LED) structure and a corresponding time-to-deposition plot, in accordance with an embodiment of the present invention.
Figures 3A-3C illustrate cross-sectional views of a process kit for a PVD chamber, in accordance with an embodiment of the present invention.
Figure 3D illustrates a cross-sectional view of a power delivery source for a PVD chamber, in accordance with an embodiment of the present invention.
Figure 4 is a schematic cross-sectional view of a MOCVD chamber suitable for the fabrication of group II I-nitride materials, in accordance with an embodiment of the present invention.
Figure 5 is a schematic cross-sectional view of a HVPE chamber suitable for the fabrication of group II I-nitride materials, in accordance with an embodiment of the present invention.
Figure 6 illustrates a block diagram of an exemplary computer system, in accordance with an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A non-transitory machine-accessible storage medium having instructions stored thereon which cause a data processing system to perform a method, the method comprising: forming an A l N layer above a substrate; and incorporating oxygen into the A l N layer including at an interface between the Al N layer and the substrate by flowing an oxygen-containing gas during forming the A lN layer, wherein the flowing the oxygen-containing gas begins after the beginning of forming the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 1, wherein forming the A l N layer comprises reacting an aluminum-containing target with a nitrogen-containing gas. Original
The non-transitory machine-accessible storage medium of claim 1, wherein forming the A l N layer comprises reacting an aluminum-containing target with a plasma based on a nitrogen-containing gas. Original
The non-transitory machine-accessible storage medium of claim 1, wherein incorporating oxygen into the A l N layer comprises incorporating a concentration of oxygen approximately in the range of 1E₁₈ to 1E₂₃ cm⁻³ into the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 1, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a bulk portion of the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 1, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a surface of the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 1, the method further comprising: forming a GaN layer on the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 1, wherein the substrate is selected from the group consisting of sapphire, Si, SiC, Si on diamond, ZnO, LiA lO 2, MgO, GaAs, Copper and W. Original
A non-transitory machine-accessible storage medium having instructions stored thereon which cause a data processing system to perform a method of forming an aluminum nitride (A i N) buffer layer for GaN-based optoelectronic or electronic devices, the method comprising: reactive sputtering an A l N layer above a substrate, the reactive sputtering comprising reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen- containing gas; and incorporating oxygen into the A l N layer including at an interface between the Al N layer and the substrate by flowing of the oxygen-containing gas subsequent to beginning reacting the aluminum-containing target with the nitrogen-containing gas or the plasma based on the nitrogen-containing gas. Original
The non-transitory machine-accessible storage medium of claim 9, wherein incorporating oxygen into the A l N layer comprises incorporating a concentration of oxygen approximately in the range of 1E₁₈ to 1E₂₃ cm⁻³ into the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 9, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a bulk portion of the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 9, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a surface of the A l N layer. Original
A non-transitory machine-accessible storage medium having instructions stored thereon which cause a data processing system to perform a method of forming an aluminum nitride (A l N) buffer layer for GaN-based optoelectronic or electronic devices, the method comprising: reactive sputtering an A l N layer above a substrate, the reactive sputtering comprising reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen- containing gas; and incorporating oxygen into the A l N layer including at an interface between the Al N layer and the substrate by flowing an oxygen-containing gas subsequent to beginning reacting the aluminum-containing target with the nitrogen-containing gas or the plasma based on the nitrogen-containing gas, wherein incorporating oxygen into the Al N layer comprises incorporating a concentration of oxygen approximately in the range of 1E₁₈ to 1E₂₃ cm⁻³ into the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 13, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a bulk portion of the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 13, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a surface of the A l N layer. Original
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based optoelectronic or electronic device with PVD AlN buffer
LED device with PVD AlN buffer
Materials described outside the worked examples.
aluminum nitride buffer layer
AlN
oxygen dopant
O
gallium nitride layer
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
AlN XRD (002) FWHM | — | AlN |
AlN XRD (002) FWHM range | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,575,071Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates a benchmark cluster tool schematic, a benchmark LED structure, and a benchmark time-to-deposition plot, in accordance with one or more embodiments of the present invention.
Figure 2A illustrates a cluster tool schematic and a corresponding temperature versus time plot for LED structure fabrication, in accordance with an embodiment of the present invention.
Figure 2B illustrates a light-emitting diode (LED) structure and a corresponding time-to-deposition plot, in accordance with an embodiment of the present invention.
Figures 3A-3C illustrate cross-sectional views of a process kit for a PVD chamber, in accordance with an embodiment of the present invention.
Figure 3D illustrates a cross-sectional view of a power delivery source for a PVD chamber, in accordance with an embodiment of the present invention.
Figure 4 is a schematic cross-sectional view of a MOCVD chamber suitable for the fabrication of group II I-nitride materials, in accordance with an embodiment of the present invention.
Figure 5 is a schematic cross-sectional view of a HVPE chamber suitable for the fabrication of group II I-nitride materials, in accordance with an embodiment of the present invention.
Figure 6 illustrates a block diagram of an exemplary computer system, in accordance with an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A non-transitory machine-accessible storage medium having instructions stored thereon which cause a data processing system to perform a method, the method comprising: forming an A l N layer above a substrate; and incorporating oxygen into the A l N layer including at an interface between the Al N layer and the substrate by flowing an oxygen-containing gas during forming the A lN layer, wherein the flowing the oxygen-containing gas begins after the beginning of forming the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 1, wherein forming the A l N layer comprises reacting an aluminum-containing target with a nitrogen-containing gas. Original
The non-transitory machine-accessible storage medium of claim 1, wherein forming the A l N layer comprises reacting an aluminum-containing target with a plasma based on a nitrogen-containing gas. Original
The non-transitory machine-accessible storage medium of claim 1, wherein incorporating oxygen into the A l N layer comprises incorporating a concentration of oxygen approximately in the range of 1E₁₈ to 1E₂₃ cm⁻³ into the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 1, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a bulk portion of the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 1, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a surface of the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 1, the method further comprising: forming a GaN layer on the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 1, wherein the substrate is selected from the group consisting of sapphire, Si, SiC, Si on diamond, ZnO, LiA lO 2, MgO, GaAs, Copper and W. Original
A non-transitory machine-accessible storage medium having instructions stored thereon which cause a data processing system to perform a method of forming an aluminum nitride (A i N) buffer layer for GaN-based optoelectronic or electronic devices, the method comprising: reactive sputtering an A l N layer above a substrate, the reactive sputtering comprising reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen- containing gas; and incorporating oxygen into the A l N layer including at an interface between the Al N layer and the substrate by flowing of the oxygen-containing gas subsequent to beginning reacting the aluminum-containing target with the nitrogen-containing gas or the plasma based on the nitrogen-containing gas. Original
The non-transitory machine-accessible storage medium of claim 9, wherein incorporating oxygen into the A l N layer comprises incorporating a concentration of oxygen approximately in the range of 1E₁₈ to 1E₂₃ cm⁻³ into the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 9, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a bulk portion of the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 9, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a surface of the A l N layer. Original
A non-transitory machine-accessible storage medium having instructions stored thereon which cause a data processing system to perform a method of forming an aluminum nitride (A l N) buffer layer for GaN-based optoelectronic or electronic devices, the method comprising: reactive sputtering an A l N layer above a substrate, the reactive sputtering comprising reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen- containing gas; and incorporating oxygen into the A l N layer including at an interface between the Al N layer and the substrate by flowing an oxygen-containing gas subsequent to beginning reacting the aluminum-containing target with the nitrogen-containing gas or the plasma based on the nitrogen-containing gas, wherein incorporating oxygen into the Al N layer comprises incorporating a concentration of oxygen approximately in the range of 1E₁₈ to 1E₂₃ cm⁻³ into the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 13, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a bulk portion of the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 13, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a surface of the A l N layer. Original
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based optoelectronic or electronic device with PVD AlN buffer
LED device with PVD AlN buffer
Materials described outside the worked examples.
aluminum nitride buffer layer
AlN
oxygen dopant
O
gallium nitride layer
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
AlN XRD (002) FWHM | — | AlN |
AlN XRD (002) FWHM range | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,575,071Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates a benchmark cluster tool schematic, a benchmark LED structure, and a benchmark time-to-deposition plot, in accordance with one or more embodiments of the present invention.
Figure 2A illustrates a cluster tool schematic and a corresponding temperature versus time plot for LED structure fabrication, in accordance with an embodiment of the present invention.
Figure 2B illustrates a light-emitting diode (LED) structure and a corresponding time-to-deposition plot, in accordance with an embodiment of the present invention.
Figures 3A-3C illustrate cross-sectional views of a process kit for a PVD chamber, in accordance with an embodiment of the present invention.
Figure 3D illustrates a cross-sectional view of a power delivery source for a PVD chamber, in accordance with an embodiment of the present invention.
Figure 4 is a schematic cross-sectional view of a MOCVD chamber suitable for the fabrication of group II I-nitride materials, in accordance with an embodiment of the present invention.
Figure 5 is a schematic cross-sectional view of a HVPE chamber suitable for the fabrication of group II I-nitride materials, in accordance with an embodiment of the present invention.
Figure 6 illustrates a block diagram of an exemplary computer system, in accordance with an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A non-transitory machine-accessible storage medium having instructions stored thereon which cause a data processing system to perform a method, the method comprising: forming an A l N layer above a substrate; and incorporating oxygen into the A l N layer including at an interface between the Al N layer and the substrate by flowing an oxygen-containing gas during forming the A lN layer, wherein the flowing the oxygen-containing gas begins after the beginning of forming the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 1, wherein forming the A l N layer comprises reacting an aluminum-containing target with a nitrogen-containing gas. Original
The non-transitory machine-accessible storage medium of claim 1, wherein forming the A l N layer comprises reacting an aluminum-containing target with a plasma based on a nitrogen-containing gas. Original
The non-transitory machine-accessible storage medium of claim 1, wherein incorporating oxygen into the A l N layer comprises incorporating a concentration of oxygen approximately in the range of 1E₁₈ to 1E₂₃ cm⁻³ into the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 1, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a bulk portion of the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 1, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a surface of the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 1, the method further comprising: forming a GaN layer on the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 1, wherein the substrate is selected from the group consisting of sapphire, Si, SiC, Si on diamond, ZnO, LiA lO 2, MgO, GaAs, Copper and W. Original
A non-transitory machine-accessible storage medium having instructions stored thereon which cause a data processing system to perform a method of forming an aluminum nitride (A i N) buffer layer for GaN-based optoelectronic or electronic devices, the method comprising: reactive sputtering an A l N layer above a substrate, the reactive sputtering comprising reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen- containing gas; and incorporating oxygen into the A l N layer including at an interface between the Al N layer and the substrate by flowing of the oxygen-containing gas subsequent to beginning reacting the aluminum-containing target with the nitrogen-containing gas or the plasma based on the nitrogen-containing gas. Original
The non-transitory machine-accessible storage medium of claim 9, wherein incorporating oxygen into the A l N layer comprises incorporating a concentration of oxygen approximately in the range of 1E₁₈ to 1E₂₃ cm⁻³ into the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 9, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a bulk portion of the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 9, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a surface of the A l N layer. Original
A non-transitory machine-accessible storage medium having instructions stored thereon which cause a data processing system to perform a method of forming an aluminum nitride (A l N) buffer layer for GaN-based optoelectronic or electronic devices, the method comprising: reactive sputtering an A l N layer above a substrate, the reactive sputtering comprising reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen- containing gas; and incorporating oxygen into the A l N layer including at an interface between the Al N layer and the substrate by flowing an oxygen-containing gas subsequent to beginning reacting the aluminum-containing target with the nitrogen-containing gas or the plasma based on the nitrogen-containing gas, wherein incorporating oxygen into the Al N layer comprises incorporating a concentration of oxygen approximately in the range of 1E₁₈ to 1E₂₃ cm⁻³ into the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 13, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a bulk portion of the A l N layer. Original
The non-transitory machine-accessible storage medium of claim 13, wherein incorporating oxygen into the A l N layer further comprises incorporating oxygen into a surface of the A l N layer. Original
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based optoelectronic or electronic device with PVD AlN buffer
LED device with PVD AlN buffer
Materials described outside the worked examples.
aluminum nitride buffer layer
AlN
oxygen dopant
O
gallium nitride layer
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
AlN XRD (002) FWHM | — | AlN |
AlN XRD (002) FWHM range | — |
Related documents with shared materials, methods, properties, or citations.
GaN-based power device with PVD AlN buffer
aluminum-containing target
Al
substrate
sapphire substrate
Al₂O₃
silicon substrate
Si
AlN XRD (102) FWHM range | — | AlN |
GaN XRD (002) FWHM | — | GaN |
GaN XRD (102) FWHM | — | GaN |
GaN dislocation density | — | GaN |
AlN surface roughness RMS | — | AlN |
Duration | 3–6 hours | — |
Thickness | 30–500 nm | — |
Thickness | 50–200 nm | — |
Temperature | 2–3 °C | — |
Thickness | 10–200 nm | — |
Pressure | 1e-8 torr | — |
Thickness | ≤ 2 nm | — |
GaN-based power device with PVD AlN buffer
aluminum-containing target
Al
substrate
sapphire substrate
Al₂O₃
silicon substrate
Si
AlN XRD (102) FWHM range | — | AlN |
GaN XRD (002) FWHM | — | GaN |
GaN XRD (102) FWHM | — | GaN |
GaN dislocation density | — | GaN |
AlN surface roughness RMS | — | AlN |
Duration | 3–6 hours | — |
Thickness | 30–500 nm | — |
Thickness | 50–200 nm | — |
Temperature | 2–3 °C | — |
Thickness | 10–200 nm | — |
Pressure | 1e-8 torr | — |
Thickness | ≤ 2 nm | — |
GaN-based power device with PVD AlN buffer
aluminum-containing target
Al
substrate
sapphire substrate
Al₂O₃
silicon substrate
Si
AlN XRD (102) FWHM range | — | AlN |
GaN XRD (002) FWHM | — | GaN |
GaN XRD (102) FWHM | — | GaN |
GaN dislocation density | — | GaN |
AlN surface roughness RMS | — | AlN |
Duration | 3–6 hours | — |
Thickness | 30–500 nm | — |
Thickness | 50–200 nm | — |
Temperature | 2–3 °C | — |
Thickness | 10–200 nm | — |
Pressure | 1e-8 torr | — |
Thickness | ≤ 2 nm | — |
GaN-based power device with PVD AlN buffer
aluminum-containing target
Al
substrate
sapphire substrate
Al₂O₃
silicon substrate
Si
AlN XRD (102) FWHM range | — | AlN |
GaN XRD (002) FWHM | — | GaN |
GaN XRD (102) FWHM | — | GaN |
GaN dislocation density | — | GaN |
AlN surface roughness RMS | — | AlN |
Duration | 3–6 hours | — |
Thickness | 30–500 nm | — |
Thickness | 50–200 nm | — |
Temperature | 2–3 °C | — |
Thickness | 10–200 nm | — |
Pressure | 1e-8 torr | — |
Thickness | ≤ 2 nm | — |