Patent
US 8,933,434ELEMENTAL SEMICONDUCTOR MATERIAL CONTACT FOR GaN-BASED LIGHT EMITTING DIODES
Anirban Basu
US
Copyright © 2026 Matter42. All rights reserved.
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a top-down view of a first exemplary semiconductor structure after formation of a stack, from bottom to top, of a first GaN layer, a multi-quantum …
FIG. 2A is a top-down view of the first exemplary semiconductor structure after application and lithographic patterning of a photoresist layer, and transfer of …
FIG. 3A is a top-down view of the first exemplary semiconductor structure after patterning a lower portion of the first GaN layer according to the first …
FIG. 4A is a top-down view of the first exemplary semiconductor structure after deposition of a dielectric material liner according to the first embodiment of …
FIG. 5A is a top-down view of the first exemplary semiconductor structure after formation of an opening in the dielectric material liner and formation of an …
FIG. 6A is a top-down view of the first exemplary semiconductor structure after formation of contact structures on the second GaN portion and the elemental …
FIG. 7A is a top-down view of the first exemplary semiconductor structure after formation of contact wires according to the first embodiment of the present …
FIG. 8A is a top-down view of a variation of the first exemplary semiconductor structure according to the first embodiment of the present disclosure. [0024]
FIG. 9A is a top-down view of a second exemplary semiconductor structure after formation of a stack, from bottom to top, of a first GaN layer, a multi-quantum …
FIG. 10 A is a top-down view of the second exemplary semiconductor structure after application and lithographic patterning of a photoresist layer, and transfer …
FIG. 11 B is a vertical cross-sectional view of the second exemplary semiconductor structure along a vertical plane B-B' of
FIG. 12A is a top-down view of the second exemplary semiconductor structure after deposition and anisotropic etching of a dielectric material liner according …
FIG. 13A is a top-down view of the second exemplary semiconductor structure after formation of elemental semiconductor material portions on a first GaN portion …
FIG. 14A is a top-down view of the second exemplary semiconductor structure after formation of contact structures and contact wires according to the second …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor structure comprising: a vertical stack located on a substrate, said vertical stack comprising, from bottom to top: a first GaN portion having a doping of a first conductivity type, a multi-quantum well located on said first GaN portion, and a second GaN portion located on said multi-quantum well and having a doping of a second conductivity type that is the opposite of said first conductivity type, wherein one of said first and second GaN portions is a p-doped GaN portion having a single crystalline structure; and an elemental semiconductor material portion comprising at least one elemental semiconductor material and in contact with a surface of said p-doped GaN portion, said elemental semiconductor material portion being single crystalline and in epitaxial alignment with said single crystalline structure of said p-doped GaN portion.
The semiconductor structure of Claim 1, wherein said multi-quant um well comprises a one-dimensional periodic array of a bilayer unit structure, said bila v er bi laryer unit structure comprising a first compound semiconductor material and a second compound semiconductor material.
The semiconductor structure of Claim 1, wherein first GaN portion, said multi- quantum well, and said second GaN portion are single crystalline, and are epitaxially aligned among one another.
The semiconductor structure of Claim 1, wherein said first GaN portion includes an upper portion and a lower portion, wherein said upper portion, said multi-quantum well, and said second GaN portion have a same horizontal cross-sectional area.
The semiconductor structure of Claim 1, wherein said p-doped GaN portion is said second GaN portion, and said elemental semiconductor material portion is in contact with a top surface of said second GaN portion.
The semiconductor structure of Claim 1, further comprising a dielectric material liner laterally surrounding said vertical stack and including an opening through which said elemental semiconductor material portion contacts said p-doped GaN portion.
The semiconductor structure of Claim 1, wherein said elemental semiconductor material portion comprises a single crystalline or polycrystalline silicon material, a single crystalline or polycrystalline germanium material, or a single crystalline or polycrystalline alloy of silicon and germanium.
The semiconductor structure of Claim 1, wherein said elemental semiconductor material portion comprises a crystalline silicon-and-hydrogen-containing material.
The semiconductor structure of Claim 1, wherein said elemental semiconductor material portion is a p-doped single crystalline elemental semiconductor material portion.
I:\IBM\ 1 05\29944\A M END\29944.am2.doc
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based light emitting diode with elemental semiconductor material contact
Materials described outside the worked examples.
first GaN portion (p-doped or n-doped)
GaN
elemental semiconductor material portion
multi-quantum well bilayer (first and second compound semiconductor materials)
dielectric material liner
silicon
Si
germanium
Ge
silicon-germanium alloy
SiGe
crystalline silicon-and-hydrogen-containing material
p-doped single crystalline silicon-carbon alloy
SiC
p-doped single crystalline silicon-germanium-carbon alloy
SiGeC
metal-semiconductor alloy contact structure
contact metal (W, Au, or Al)
metal-semiconductor alloy of elemental semiconductor and nickel
InxGa₁-xN (first compound semiconductor, MQW)
InxGa₁-xN
AlxGa₁-xN (first compound semiconductor, MQW)
AlxGa₁-xN
sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
about 14, and at a power density of about 4 mW/cm2. A H 2 plasma etch can be performed at a temperature of about 150 ° C at about 900 mTorr
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 30000–1000000 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 2–20 nm | — |
Thickness | 3–100 nm | — |
Temperature | 150–250 °C | — |
Thickness | 3–30 nm | — |
Thickness | 5–50 nm | — |
Temperature | ≤ 600 °C | — |
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a top-down view of a first exemplary semiconductor structure after formation of a stack, from bottom to top, of a first GaN layer, a multi-quantum …
FIG. 2A is a top-down view of the first exemplary semiconductor structure after application and lithographic patterning of a photoresist layer, and transfer of …
FIG. 3A is a top-down view of the first exemplary semiconductor structure after patterning a lower portion of the first GaN layer according to the first …
FIG. 4A is a top-down view of the first exemplary semiconductor structure after deposition of a dielectric material liner according to the first embodiment of …
FIG. 5A is a top-down view of the first exemplary semiconductor structure after formation of an opening in the dielectric material liner and formation of an …
FIG. 6A is a top-down view of the first exemplary semiconductor structure after formation of contact structures on the second GaN portion and the elemental …
FIG. 7A is a top-down view of the first exemplary semiconductor structure after formation of contact wires according to the first embodiment of the present …
FIG. 8A is a top-down view of a variation of the first exemplary semiconductor structure according to the first embodiment of the present disclosure. [0024]
FIG. 9A is a top-down view of a second exemplary semiconductor structure after formation of a stack, from bottom to top, of a first GaN layer, a multi-quantum …
FIG. 10 A is a top-down view of the second exemplary semiconductor structure after application and lithographic patterning of a photoresist layer, and transfer …
FIG. 11 B is a vertical cross-sectional view of the second exemplary semiconductor structure along a vertical plane B-B' of
FIG. 12A is a top-down view of the second exemplary semiconductor structure after deposition and anisotropic etching of a dielectric material liner according …
FIG. 13A is a top-down view of the second exemplary semiconductor structure after formation of elemental semiconductor material portions on a first GaN portion …
FIG. 14A is a top-down view of the second exemplary semiconductor structure after formation of contact structures and contact wires according to the second …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor structure comprising: a vertical stack located on a substrate, said vertical stack comprising, from bottom to top: a first GaN portion having a doping of a first conductivity type, a multi-quantum well located on said first GaN portion, and a second GaN portion located on said multi-quantum well and having a doping of a second conductivity type that is the opposite of said first conductivity type, wherein one of said first and second GaN portions is a p-doped GaN portion having a single crystalline structure; and an elemental semiconductor material portion comprising at least one elemental semiconductor material and in contact with a surface of said p-doped GaN portion, said elemental semiconductor material portion being single crystalline and in epitaxial alignment with said single crystalline structure of said p-doped GaN portion.
The semiconductor structure of Claim 1, wherein said multi-quant um well comprises a one-dimensional periodic array of a bilayer unit structure, said bila v er bi laryer unit structure comprising a first compound semiconductor material and a second compound semiconductor material.
The semiconductor structure of Claim 1, wherein first GaN portion, said multi- quantum well, and said second GaN portion are single crystalline, and are epitaxially aligned among one another.
The semiconductor structure of Claim 1, wherein said first GaN portion includes an upper portion and a lower portion, wherein said upper portion, said multi-quantum well, and said second GaN portion have a same horizontal cross-sectional area.
The semiconductor structure of Claim 1, wherein said p-doped GaN portion is said second GaN portion, and said elemental semiconductor material portion is in contact with a top surface of said second GaN portion.
The semiconductor structure of Claim 1, further comprising a dielectric material liner laterally surrounding said vertical stack and including an opening through which said elemental semiconductor material portion contacts said p-doped GaN portion.
The semiconductor structure of Claim 1, wherein said elemental semiconductor material portion comprises a single crystalline or polycrystalline silicon material, a single crystalline or polycrystalline germanium material, or a single crystalline or polycrystalline alloy of silicon and germanium.
The semiconductor structure of Claim 1, wherein said elemental semiconductor material portion comprises a crystalline silicon-and-hydrogen-containing material.
The semiconductor structure of Claim 1, wherein said elemental semiconductor material portion is a p-doped single crystalline elemental semiconductor material portion.
I:\IBM\ 1 05\29944\A M END\29944.am2.doc
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based light emitting diode with elemental semiconductor material contact
Materials described outside the worked examples.
first GaN portion (p-doped or n-doped)
GaN
elemental semiconductor material portion
multi-quantum well bilayer (first and second compound semiconductor materials)
dielectric material liner
silicon
Si
germanium
Ge
silicon-germanium alloy
SiGe
crystalline silicon-and-hydrogen-containing material
p-doped single crystalline silicon-carbon alloy
SiC
p-doped single crystalline silicon-germanium-carbon alloy
SiGeC
metal-semiconductor alloy contact structure
contact metal (W, Au, or Al)
metal-semiconductor alloy of elemental semiconductor and nickel
InxGa₁-xN (first compound semiconductor, MQW)
InxGa₁-xN
AlxGa₁-xN (first compound semiconductor, MQW)
AlxGa₁-xN
sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
about 14, and at a power density of about 4 mW/cm2. A H 2 plasma etch can be performed at a temperature of about 150 ° C at about 900 mTorr
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 30000–1000000 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 2–20 nm | — |
Thickness | 3–100 nm | — |
Temperature | 150–250 °C | — |
Thickness | 3–30 nm | — |
Thickness | 5–50 nm | — |
Temperature | ≤ 600 °C | — |
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a top-down view of a first exemplary semiconductor structure after formation of a stack, from bottom to top, of a first GaN layer, a multi-quantum …
FIG. 2A is a top-down view of the first exemplary semiconductor structure after application and lithographic patterning of a photoresist layer, and transfer of …
FIG. 3A is a top-down view of the first exemplary semiconductor structure after patterning a lower portion of the first GaN layer according to the first …
FIG. 4A is a top-down view of the first exemplary semiconductor structure after deposition of a dielectric material liner according to the first embodiment of …
FIG. 5A is a top-down view of the first exemplary semiconductor structure after formation of an opening in the dielectric material liner and formation of an …
FIG. 6A is a top-down view of the first exemplary semiconductor structure after formation of contact structures on the second GaN portion and the elemental …
FIG. 7A is a top-down view of the first exemplary semiconductor structure after formation of contact wires according to the first embodiment of the present …
FIG. 8A is a top-down view of a variation of the first exemplary semiconductor structure according to the first embodiment of the present disclosure. [0024]
FIG. 9A is a top-down view of a second exemplary semiconductor structure after formation of a stack, from bottom to top, of a first GaN layer, a multi-quantum …
FIG. 10 A is a top-down view of the second exemplary semiconductor structure after application and lithographic patterning of a photoresist layer, and transfer …
FIG. 11 B is a vertical cross-sectional view of the second exemplary semiconductor structure along a vertical plane B-B' of
FIG. 12A is a top-down view of the second exemplary semiconductor structure after deposition and anisotropic etching of a dielectric material liner according …
FIG. 13A is a top-down view of the second exemplary semiconductor structure after formation of elemental semiconductor material portions on a first GaN portion …
FIG. 14A is a top-down view of the second exemplary semiconductor structure after formation of contact structures and contact wires according to the second …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor structure comprising: a vertical stack located on a substrate, said vertical stack comprising, from bottom to top: a first GaN portion having a doping of a first conductivity type, a multi-quantum well located on said first GaN portion, and a second GaN portion located on said multi-quantum well and having a doping of a second conductivity type that is the opposite of said first conductivity type, wherein one of said first and second GaN portions is a p-doped GaN portion having a single crystalline structure; and an elemental semiconductor material portion comprising at least one elemental semiconductor material and in contact with a surface of said p-doped GaN portion, said elemental semiconductor material portion being single crystalline and in epitaxial alignment with said single crystalline structure of said p-doped GaN portion.
The semiconductor structure of Claim 1, wherein said multi-quant um well comprises a one-dimensional periodic array of a bilayer unit structure, said bila v er bi laryer unit structure comprising a first compound semiconductor material and a second compound semiconductor material.
The semiconductor structure of Claim 1, wherein first GaN portion, said multi- quantum well, and said second GaN portion are single crystalline, and are epitaxially aligned among one another.
The semiconductor structure of Claim 1, wherein said first GaN portion includes an upper portion and a lower portion, wherein said upper portion, said multi-quantum well, and said second GaN portion have a same horizontal cross-sectional area.
The semiconductor structure of Claim 1, wherein said p-doped GaN portion is said second GaN portion, and said elemental semiconductor material portion is in contact with a top surface of said second GaN portion.
The semiconductor structure of Claim 1, further comprising a dielectric material liner laterally surrounding said vertical stack and including an opening through which said elemental semiconductor material portion contacts said p-doped GaN portion.
The semiconductor structure of Claim 1, wherein said elemental semiconductor material portion comprises a single crystalline or polycrystalline silicon material, a single crystalline or polycrystalline germanium material, or a single crystalline or polycrystalline alloy of silicon and germanium.
The semiconductor structure of Claim 1, wherein said elemental semiconductor material portion comprises a crystalline silicon-and-hydrogen-containing material.
The semiconductor structure of Claim 1, wherein said elemental semiconductor material portion is a p-doped single crystalline elemental semiconductor material portion.
I:\IBM\ 1 05\29944\A M END\29944.am2.doc
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based light emitting diode with elemental semiconductor material contact
Materials described outside the worked examples.
first GaN portion (p-doped or n-doped)
GaN
elemental semiconductor material portion
multi-quantum well bilayer (first and second compound semiconductor materials)
dielectric material liner
silicon
Si
germanium
Ge
silicon-germanium alloy
SiGe
crystalline silicon-and-hydrogen-containing material
p-doped single crystalline silicon-carbon alloy
SiC
p-doped single crystalline silicon-germanium-carbon alloy
SiGeC
metal-semiconductor alloy contact structure
contact metal (W, Au, or Al)
metal-semiconductor alloy of elemental semiconductor and nickel
InxGa₁-xN (first compound semiconductor, MQW)
InxGa₁-xN
AlxGa₁-xN (first compound semiconductor, MQW)
AlxGa₁-xN
sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
about 14, and at a power density of about 4 mW/cm2. A H 2 plasma etch can be performed at a temperature of about 150 ° C at about 900 mTorr
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 30000–1000000 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 2–20 nm | — |
Thickness | 3–100 nm | — |
Temperature | 150–250 °C | — |
Thickness | 3–30 nm | — |
Thickness | 5–50 nm | — |
Temperature | ≤ 600 °C | — |
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a top-down view of a first exemplary semiconductor structure after formation of a stack, from bottom to top, of a first GaN layer, a multi-quantum …
FIG. 2A is a top-down view of the first exemplary semiconductor structure after application and lithographic patterning of a photoresist layer, and transfer of …
FIG. 3A is a top-down view of the first exemplary semiconductor structure after patterning a lower portion of the first GaN layer according to the first …
FIG. 4A is a top-down view of the first exemplary semiconductor structure after deposition of a dielectric material liner according to the first embodiment of …
FIG. 5A is a top-down view of the first exemplary semiconductor structure after formation of an opening in the dielectric material liner and formation of an …
FIG. 6A is a top-down view of the first exemplary semiconductor structure after formation of contact structures on the second GaN portion and the elemental …
FIG. 7A is a top-down view of the first exemplary semiconductor structure after formation of contact wires according to the first embodiment of the present …
FIG. 8A is a top-down view of a variation of the first exemplary semiconductor structure according to the first embodiment of the present disclosure. [0024]
FIG. 9A is a top-down view of a second exemplary semiconductor structure after formation of a stack, from bottom to top, of a first GaN layer, a multi-quantum …
FIG. 10 A is a top-down view of the second exemplary semiconductor structure after application and lithographic patterning of a photoresist layer, and transfer …
FIG. 11 B is a vertical cross-sectional view of the second exemplary semiconductor structure along a vertical plane B-B' of
FIG. 12A is a top-down view of the second exemplary semiconductor structure after deposition and anisotropic etching of a dielectric material liner according …
FIG. 13A is a top-down view of the second exemplary semiconductor structure after formation of elemental semiconductor material portions on a first GaN portion …
FIG. 14A is a top-down view of the second exemplary semiconductor structure after formation of contact structures and contact wires according to the second …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor structure comprising: a vertical stack located on a substrate, said vertical stack comprising, from bottom to top: a first GaN portion having a doping of a first conductivity type, a multi-quantum well located on said first GaN portion, and a second GaN portion located on said multi-quantum well and having a doping of a second conductivity type that is the opposite of said first conductivity type, wherein one of said first and second GaN portions is a p-doped GaN portion having a single crystalline structure; and an elemental semiconductor material portion comprising at least one elemental semiconductor material and in contact with a surface of said p-doped GaN portion, said elemental semiconductor material portion being single crystalline and in epitaxial alignment with said single crystalline structure of said p-doped GaN portion.
The semiconductor structure of Claim 1, wherein said multi-quant um well comprises a one-dimensional periodic array of a bilayer unit structure, said bila v er bi laryer unit structure comprising a first compound semiconductor material and a second compound semiconductor material.
The semiconductor structure of Claim 1, wherein first GaN portion, said multi- quantum well, and said second GaN portion are single crystalline, and are epitaxially aligned among one another.
The semiconductor structure of Claim 1, wherein said first GaN portion includes an upper portion and a lower portion, wherein said upper portion, said multi-quantum well, and said second GaN portion have a same horizontal cross-sectional area.
The semiconductor structure of Claim 1, wherein said p-doped GaN portion is said second GaN portion, and said elemental semiconductor material portion is in contact with a top surface of said second GaN portion.
The semiconductor structure of Claim 1, further comprising a dielectric material liner laterally surrounding said vertical stack and including an opening through which said elemental semiconductor material portion contacts said p-doped GaN portion.
The semiconductor structure of Claim 1, wherein said elemental semiconductor material portion comprises a single crystalline or polycrystalline silicon material, a single crystalline or polycrystalline germanium material, or a single crystalline or polycrystalline alloy of silicon and germanium.
The semiconductor structure of Claim 1, wherein said elemental semiconductor material portion comprises a crystalline silicon-and-hydrogen-containing material.
The semiconductor structure of Claim 1, wherein said elemental semiconductor material portion is a p-doped single crystalline elemental semiconductor material portion.
I:\IBM\ 1 05\29944\A M END\29944.am2.doc
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based light emitting diode with elemental semiconductor material contact
Materials described outside the worked examples.
first GaN portion (p-doped or n-doped)
GaN
elemental semiconductor material portion
multi-quantum well bilayer (first and second compound semiconductor materials)
dielectric material liner
silicon
Si
germanium
Ge
silicon-germanium alloy
SiGe
crystalline silicon-and-hydrogen-containing material
p-doped single crystalline silicon-carbon alloy
SiC
p-doped single crystalline silicon-germanium-carbon alloy
SiGeC
metal-semiconductor alloy contact structure
contact metal (W, Au, or Al)
metal-semiconductor alloy of elemental semiconductor and nickel
InxGa₁-xN (first compound semiconductor, MQW)
InxGa₁-xN
AlxGa₁-xN (first compound semiconductor, MQW)
AlxGa₁-xN
sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
about 14, and at a power density of about 4 mW/cm2. A H 2 plasma etch can be performed at a temperature of about 150 ° C at about 900 mTorr
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 30000–1000000 nm | — |
Thickness | 10–1000 nm | — |
Thickness | 2–20 nm | — |
Thickness | 3–100 nm | — |
Temperature | 150–250 °C | — |
Thickness | 3–30 nm | — |
Thickness | 5–50 nm | — |
Temperature | ≤ 600 °C | — |
Related documents with shared materials, methods, properties, or citations.
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METHOD FOR PRODUCING AN OPTOELECTRONIC DEVICE COMPRISING A PLURALITY OF GALLIUM NITRIDE DIODES
BORON-CONTAINING BUFFER LAYER FOR GROWING GALLIUM NITRIDE ON SILICON
GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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