Patent
US 8,409,895GALLIUM NITRIDE-BASED LED FABRICATION WITH PVD-FORMED ALUMINUM NITRIDE BUFFER LAYER
Mingwei Zhu, Vivek Agrawal, Nag B. Patibandla, Omkaram Nalamasu
US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
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US 8,409,895Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates a benchmark cluster tool schematic, a benchmark LED structure, and a benchmark time-to-deposition plot, in accordance with one or more embodiments of the present invention.
Figure 2A illustrates a cluster tool schematic and a corresponding temperature versus time plot for LED structure fabrication, in accordance with an embodiment of the present invention.
Figure 2B illustrates a light-emitting diode (LED) structure and a corresponding time-to-deposition plot, in accordance with an embodiment of the present invention.
Figure 3 is a Flowchart representing operations in a method of fabricating a gallium nitride-based light LED with a PVD-formed aluminum nitride buffer layer, in accordance with an embodiment of the present invention.
Figure 4 is a schematic cross-sectional view of a MOCVD chamber suitable for the fabrication of group II I-nitride materials, in accordance with an embodiment of the present invention.
Figure 5 is a schematic cross-sectional view of a HVPE chamber suitable for the fabrication of group II I-nitride materials, in accordance with an embodiment of the present invention.
Figure 6 illustrates a cross-sectional view of a gallium nitride (GaN)-based light-emitting diode (LED) formed on a metalized substrate, in accordance with an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
42526272829. Amendments to the Claims: This listing of claims will replace all prior versions and listings of claims in the application. Claims 15 is herein canceled without prejudice. Please enter new claims 23- 29.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED with PVD-formed AlN buffer layer
Materials described outside the worked examples.
aluminum nitride buffer layer
AlN
gallium nitride (un-doped)
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 30–500 nm | — |
Thickness | 50–200 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,409,895Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates a benchmark cluster tool schematic, a benchmark LED structure, and a benchmark time-to-deposition plot, in accordance with one or more embodiments of the present invention.
Figure 2A illustrates a cluster tool schematic and a corresponding temperature versus time plot for LED structure fabrication, in accordance with an embodiment of the present invention.
Figure 2B illustrates a light-emitting diode (LED) structure and a corresponding time-to-deposition plot, in accordance with an embodiment of the present invention.
Figure 3 is a Flowchart representing operations in a method of fabricating a gallium nitride-based light LED with a PVD-formed aluminum nitride buffer layer, in accordance with an embodiment of the present invention.
Figure 4 is a schematic cross-sectional view of a MOCVD chamber suitable for the fabrication of group II I-nitride materials, in accordance with an embodiment of the present invention.
Figure 5 is a schematic cross-sectional view of a HVPE chamber suitable for the fabrication of group II I-nitride materials, in accordance with an embodiment of the present invention.
Figure 6 illustrates a cross-sectional view of a gallium nitride (GaN)-based light-emitting diode (LED) formed on a metalized substrate, in accordance with an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
42526272829. Amendments to the Claims: This listing of claims will replace all prior versions and listings of claims in the application. Claims 15 is herein canceled without prejudice. Please enter new claims 23- 29.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED with PVD-formed AlN buffer layer
Materials described outside the worked examples.
aluminum nitride buffer layer
AlN
gallium nitride (un-doped)
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 30–500 nm | — |
Thickness | 50–200 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,409,895Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates a benchmark cluster tool schematic, a benchmark LED structure, and a benchmark time-to-deposition plot, in accordance with one or more embodiments of the present invention.
Figure 2A illustrates a cluster tool schematic and a corresponding temperature versus time plot for LED structure fabrication, in accordance with an embodiment of the present invention.
Figure 2B illustrates a light-emitting diode (LED) structure and a corresponding time-to-deposition plot, in accordance with an embodiment of the present invention.
Figure 3 is a Flowchart representing operations in a method of fabricating a gallium nitride-based light LED with a PVD-formed aluminum nitride buffer layer, in accordance with an embodiment of the present invention.
Figure 4 is a schematic cross-sectional view of a MOCVD chamber suitable for the fabrication of group II I-nitride materials, in accordance with an embodiment of the present invention.
Figure 5 is a schematic cross-sectional view of a HVPE chamber suitable for the fabrication of group II I-nitride materials, in accordance with an embodiment of the present invention.
Figure 6 illustrates a cross-sectional view of a gallium nitride (GaN)-based light-emitting diode (LED) formed on a metalized substrate, in accordance with an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
42526272829. Amendments to the Claims: This listing of claims will replace all prior versions and listings of claims in the application. Claims 15 is herein canceled without prejudice. Please enter new claims 23- 29.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED with PVD-formed AlN buffer layer
Materials described outside the worked examples.
aluminum nitride buffer layer
AlN
gallium nitride (un-doped)
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 30–500 nm | — |
Thickness | 50–200 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,409,895Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 illustrates a benchmark cluster tool schematic, a benchmark LED structure, and a benchmark time-to-deposition plot, in accordance with one or more embodiments of the present invention.
Figure 2A illustrates a cluster tool schematic and a corresponding temperature versus time plot for LED structure fabrication, in accordance with an embodiment of the present invention.
Figure 2B illustrates a light-emitting diode (LED) structure and a corresponding time-to-deposition plot, in accordance with an embodiment of the present invention.
Figure 3 is a Flowchart representing operations in a method of fabricating a gallium nitride-based light LED with a PVD-formed aluminum nitride buffer layer, in accordance with an embodiment of the present invention.
Figure 4 is a schematic cross-sectional view of a MOCVD chamber suitable for the fabrication of group II I-nitride materials, in accordance with an embodiment of the present invention.
Figure 5 is a schematic cross-sectional view of a HVPE chamber suitable for the fabrication of group II I-nitride materials, in accordance with an embodiment of the present invention.
Figure 6 illustrates a cross-sectional view of a gallium nitride (GaN)-based light-emitting diode (LED) formed on a metalized substrate, in accordance with an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
42526272829. Amendments to the Claims: This listing of claims will replace all prior versions and listings of claims in the application. Claims 15 is herein canceled without prejudice. Please enter new claims 23- 29.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED with PVD-formed AlN buffer layer
Materials described outside the worked examples.
aluminum nitride buffer layer
AlN
gallium nitride (un-doped)
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 30–500 nm | — |
Thickness | 50–200 nm |
Related documents with shared materials, methods, properties, or citations.
Benchmark GaN-based LED structure
n-type gallium nitride
GaN:n
p-type gallium nitride
GaN:p
p-type gallium aluminum nitride
AlGaN:p
sapphire substrate
Al₂O₃
silicon substrate
Si
multiple quantum well structure
| — |
Temperature | 2–3 °C | — |
Thickness | 10–200 nm | — |
Pressure | 1e-8 torr | — |
Thickness | 150–300 nm | — |
Thickness | ≤ 25 nm | — |
LASER ANNEALING OF GAN LEDS WITH REDUCED PATTERN EFFECTS
Benchmark GaN-based LED structure
n-type gallium nitride
GaN:n
p-type gallium nitride
GaN:p
p-type gallium aluminum nitride
AlGaN:p
sapphire substrate
Al₂O₃
silicon substrate
Si
multiple quantum well structure
| — |
Temperature | 2–3 °C | — |
Thickness | 10–200 nm | — |
Pressure | 1e-8 torr | — |
Thickness | 150–300 nm | — |
Thickness | ≤ 25 nm | — |
LASER ANNEALING OF GAN LEDS WITH REDUCED PATTERN EFFECTS
Benchmark GaN-based LED structure
n-type gallium nitride
GaN:n
p-type gallium nitride
GaN:p
p-type gallium aluminum nitride
AlGaN:p
sapphire substrate
Al₂O₃
silicon substrate
Si
multiple quantum well structure
| — |
Temperature | 2–3 °C | — |
Thickness | 10–200 nm | — |
Pressure | 1e-8 torr | — |
Thickness | 150–300 nm | — |
Thickness | ≤ 25 nm | — |
LASER ANNEALING OF GAN LEDS WITH REDUCED PATTERN EFFECTS
Benchmark GaN-based LED structure
n-type gallium nitride
GaN:n
p-type gallium nitride
GaN:p
p-type gallium aluminum nitride
AlGaN:p
sapphire substrate
Al₂O₃
silicon substrate
Si
multiple quantum well structure
| — |
Temperature | 2–3 °C | — |
Thickness | 10–200 nm | — |
Pressure | 1e-8 torr | — |
Thickness | 150–300 nm | — |
Thickness | ≤ 25 nm | — |