Patent
US 9,190,570LASER ANNEALING OF GaN LEDs WITH REDUCED PATTERN EFFECTS
Andrew M. Hawryluk
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,190,570Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional diagram of an example prior art vertical-type GaN light-emitting diode (LED) structure; [0027]
FIG. 2 is a top-down view of the prior art vertical-type GaN LED structure of
FIG. 3 is a schematic cross-sectional diagram of an example prior art horizontal- type GaN LED structure; [0029]
FIG. 4 is a top-down view of the prior art horizontal-type GaN LED structure of
FIG. 5 is a plan view of an example product substrate on which the GaN structures are formed, showing how the annealing laser beam forms a line image that is …
FIG. 6 is a schematic cross-sectional view of the upper portion of the GaN LED structure and shows the GaN LED structure being laser annealed with an anneal …
FIG. 7A, shown a line image 124 formed by the P-polarized anneal laser beam, with the line image above to be scanned over the GaN LED structure; [0034]
FIG. 8B and shows an example configuration of the modified current- spreading electrodes being laser annealed by a scanned line image, prior to forming the anode …
FIG. 9B is a top-down view of the example configuration of the modified current- spreading electrodes of
FIG. 10 is a plan view of an example product wafer similar to that of
FIG. 11 shows an example LED device formed using one of the LED dies.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of laser annealing a GaN light-emitting diode (LED) structure, comprising forming elongate conductive structures atop either an n-GaN layer or a p-Ga N layer of the GaN LED structure, the elongate conductive structures having long and short dimensions, and being spaced apart and substantially aligned in the long dimensions; generating a P-polarized anneal laser beam that has an anneal wavelength that is greater than the short dimension; and irradiating either the n-GaN layer or the p-GaN layer of the GaN LED structure through the conductive structures with the P-polarized anneal laser beam, including directing the anneal laser beam relative to the conductive structures so that the polarization direction is perpendicular to the long dimension of the conductive structures.
The method of claim 1, wherein the elongate conductive structure has a surface that is generally rectangular.
The method of claim 1, wherein the substantial alignment of the elongate conductive structures includes two or more of the elongate conductive structures being parallel.
The method of claim 1, wherein the elongate conductive structures define current- spreading electrodes.
The method of claim 1, wherein the anneal wavelength is about 10.6 microns.
The method of claim 1, further comprising scanning with the anneal laser beam over the conductive structures.
Filed via EFS 1/2 Attorney Docket No. VT₁₁₉-11U S₁ 8. The method of claim 1, wherein the GaN LED structures are formed on a product substrate and further comprising: dicing the product substrate to form LED dies from the GaN LED structures.
A GaN light-emitting diode (LED) apparatus suitable for laser annealing with a P- polarized anneal laser beam having an anneal wavelength, comprising: a GaN multilayer structure that includes p-GaN and n-GaN layers that sandwich an active layer; and a plurality of conductive structures formed atop either the p-GaN layer or the n- GaN layer, the conductive structures each being elongate with a long dimension and a short dimension and aligned generally in the same direction, with the short dimension being smaller than the anneal wavelength.
The apparatus of claim 10, wherein the elongate conductive structures have a surface that is generally rectangular.
The apparatus of claim 10, wherein the substantial alignment of the elongate conductive structures includes two or more of the elongate conductive structures being parallel.
The apparatus of claim 10, wherein the elongate conductive structures define current-spreading electrodes.
The apparatus of claim 10, wherein the short dimension is smaller than about 10.6 microns.
The apparatus of claim 10, wherein the conductive structures are disposed atop the p-GaN layer, and further including a transparent conducting layer between the conductive structures and the p-GaN layer.
Layer stacks claimed or described, ordered top of device to substrate.
GaN light-emitting diode (LED) structure
Materials described outside the worked examples.
p-GaN
GaN
elongate conductive structures
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–100 mm | — |
Thickness | 7–20 mm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,190,570Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional diagram of an example prior art vertical-type GaN light-emitting diode (LED) structure; [0027]
FIG. 2 is a top-down view of the prior art vertical-type GaN LED structure of
FIG. 3 is a schematic cross-sectional diagram of an example prior art horizontal- type GaN LED structure; [0029]
FIG. 4 is a top-down view of the prior art horizontal-type GaN LED structure of
FIG. 5 is a plan view of an example product substrate on which the GaN structures are formed, showing how the annealing laser beam forms a line image that is …
FIG. 6 is a schematic cross-sectional view of the upper portion of the GaN LED structure and shows the GaN LED structure being laser annealed with an anneal …
FIG. 7A, shown a line image 124 formed by the P-polarized anneal laser beam, with the line image above to be scanned over the GaN LED structure; [0034]
FIG. 8B and shows an example configuration of the modified current- spreading electrodes being laser annealed by a scanned line image, prior to forming the anode …
FIG. 9B is a top-down view of the example configuration of the modified current- spreading electrodes of
FIG. 10 is a plan view of an example product wafer similar to that of
FIG. 11 shows an example LED device formed using one of the LED dies.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of laser annealing a GaN light-emitting diode (LED) structure, comprising forming elongate conductive structures atop either an n-GaN layer or a p-Ga N layer of the GaN LED structure, the elongate conductive structures having long and short dimensions, and being spaced apart and substantially aligned in the long dimensions; generating a P-polarized anneal laser beam that has an anneal wavelength that is greater than the short dimension; and irradiating either the n-GaN layer or the p-GaN layer of the GaN LED structure through the conductive structures with the P-polarized anneal laser beam, including directing the anneal laser beam relative to the conductive structures so that the polarization direction is perpendicular to the long dimension of the conductive structures.
The method of claim 1, wherein the elongate conductive structure has a surface that is generally rectangular.
The method of claim 1, wherein the substantial alignment of the elongate conductive structures includes two or more of the elongate conductive structures being parallel.
The method of claim 1, wherein the elongate conductive structures define current- spreading electrodes.
The method of claim 1, wherein the anneal wavelength is about 10.6 microns.
The method of claim 1, further comprising scanning with the anneal laser beam over the conductive structures.
Filed via EFS 1/2 Attorney Docket No. VT₁₁₉-11U S₁ 8. The method of claim 1, wherein the GaN LED structures are formed on a product substrate and further comprising: dicing the product substrate to form LED dies from the GaN LED structures.
A GaN light-emitting diode (LED) apparatus suitable for laser annealing with a P- polarized anneal laser beam having an anneal wavelength, comprising: a GaN multilayer structure that includes p-GaN and n-GaN layers that sandwich an active layer; and a plurality of conductive structures formed atop either the p-GaN layer or the n- GaN layer, the conductive structures each being elongate with a long dimension and a short dimension and aligned generally in the same direction, with the short dimension being smaller than the anneal wavelength.
The apparatus of claim 10, wherein the elongate conductive structures have a surface that is generally rectangular.
The apparatus of claim 10, wherein the substantial alignment of the elongate conductive structures includes two or more of the elongate conductive structures being parallel.
The apparatus of claim 10, wherein the elongate conductive structures define current-spreading electrodes.
The apparatus of claim 10, wherein the short dimension is smaller than about 10.6 microns.
The apparatus of claim 10, wherein the conductive structures are disposed atop the p-GaN layer, and further including a transparent conducting layer between the conductive structures and the p-GaN layer.
Layer stacks claimed or described, ordered top of device to substrate.
GaN light-emitting diode (LED) structure
Materials described outside the worked examples.
p-GaN
GaN
elongate conductive structures
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–100 mm | — |
Thickness | 7–20 mm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,190,570Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional diagram of an example prior art vertical-type GaN light-emitting diode (LED) structure; [0027]
FIG. 2 is a top-down view of the prior art vertical-type GaN LED structure of
FIG. 3 is a schematic cross-sectional diagram of an example prior art horizontal- type GaN LED structure; [0029]
FIG. 4 is a top-down view of the prior art horizontal-type GaN LED structure of
FIG. 5 is a plan view of an example product substrate on which the GaN structures are formed, showing how the annealing laser beam forms a line image that is …
FIG. 6 is a schematic cross-sectional view of the upper portion of the GaN LED structure and shows the GaN LED structure being laser annealed with an anneal …
FIG. 7A, shown a line image 124 formed by the P-polarized anneal laser beam, with the line image above to be scanned over the GaN LED structure; [0034]
FIG. 8B and shows an example configuration of the modified current- spreading electrodes being laser annealed by a scanned line image, prior to forming the anode …
FIG. 9B is a top-down view of the example configuration of the modified current- spreading electrodes of
FIG. 10 is a plan view of an example product wafer similar to that of
FIG. 11 shows an example LED device formed using one of the LED dies.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of laser annealing a GaN light-emitting diode (LED) structure, comprising forming elongate conductive structures atop either an n-GaN layer or a p-Ga N layer of the GaN LED structure, the elongate conductive structures having long and short dimensions, and being spaced apart and substantially aligned in the long dimensions; generating a P-polarized anneal laser beam that has an anneal wavelength that is greater than the short dimension; and irradiating either the n-GaN layer or the p-GaN layer of the GaN LED structure through the conductive structures with the P-polarized anneal laser beam, including directing the anneal laser beam relative to the conductive structures so that the polarization direction is perpendicular to the long dimension of the conductive structures.
The method of claim 1, wherein the elongate conductive structure has a surface that is generally rectangular.
The method of claim 1, wherein the substantial alignment of the elongate conductive structures includes two or more of the elongate conductive structures being parallel.
The method of claim 1, wherein the elongate conductive structures define current- spreading electrodes.
The method of claim 1, wherein the anneal wavelength is about 10.6 microns.
The method of claim 1, further comprising scanning with the anneal laser beam over the conductive structures.
Filed via EFS 1/2 Attorney Docket No. VT₁₁₉-11U S₁ 8. The method of claim 1, wherein the GaN LED structures are formed on a product substrate and further comprising: dicing the product substrate to form LED dies from the GaN LED structures.
A GaN light-emitting diode (LED) apparatus suitable for laser annealing with a P- polarized anneal laser beam having an anneal wavelength, comprising: a GaN multilayer structure that includes p-GaN and n-GaN layers that sandwich an active layer; and a plurality of conductive structures formed atop either the p-GaN layer or the n- GaN layer, the conductive structures each being elongate with a long dimension and a short dimension and aligned generally in the same direction, with the short dimension being smaller than the anneal wavelength.
The apparatus of claim 10, wherein the elongate conductive structures have a surface that is generally rectangular.
The apparatus of claim 10, wherein the substantial alignment of the elongate conductive structures includes two or more of the elongate conductive structures being parallel.
The apparatus of claim 10, wherein the elongate conductive structures define current-spreading electrodes.
The apparatus of claim 10, wherein the short dimension is smaller than about 10.6 microns.
The apparatus of claim 10, wherein the conductive structures are disposed atop the p-GaN layer, and further including a transparent conducting layer between the conductive structures and the p-GaN layer.
Layer stacks claimed or described, ordered top of device to substrate.
GaN light-emitting diode (LED) structure
Materials described outside the worked examples.
p-GaN
GaN
elongate conductive structures
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–100 mm | — |
Thickness | 7–20 mm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,190,570Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional diagram of an example prior art vertical-type GaN light-emitting diode (LED) structure; [0027]
FIG. 2 is a top-down view of the prior art vertical-type GaN LED structure of
FIG. 3 is a schematic cross-sectional diagram of an example prior art horizontal- type GaN LED structure; [0029]
FIG. 4 is a top-down view of the prior art horizontal-type GaN LED structure of
FIG. 5 is a plan view of an example product substrate on which the GaN structures are formed, showing how the annealing laser beam forms a line image that is …
FIG. 6 is a schematic cross-sectional view of the upper portion of the GaN LED structure and shows the GaN LED structure being laser annealed with an anneal …
FIG. 7A, shown a line image 124 formed by the P-polarized anneal laser beam, with the line image above to be scanned over the GaN LED structure; [0034]
FIG. 8B and shows an example configuration of the modified current- spreading electrodes being laser annealed by a scanned line image, prior to forming the anode …
FIG. 9B is a top-down view of the example configuration of the modified current- spreading electrodes of
FIG. 10 is a plan view of an example product wafer similar to that of
FIG. 11 shows an example LED device formed using one of the LED dies.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of laser annealing a GaN light-emitting diode (LED) structure, comprising forming elongate conductive structures atop either an n-GaN layer or a p-Ga N layer of the GaN LED structure, the elongate conductive structures having long and short dimensions, and being spaced apart and substantially aligned in the long dimensions; generating a P-polarized anneal laser beam that has an anneal wavelength that is greater than the short dimension; and irradiating either the n-GaN layer or the p-GaN layer of the GaN LED structure through the conductive structures with the P-polarized anneal laser beam, including directing the anneal laser beam relative to the conductive structures so that the polarization direction is perpendicular to the long dimension of the conductive structures.
The method of claim 1, wherein the elongate conductive structure has a surface that is generally rectangular.
The method of claim 1, wherein the substantial alignment of the elongate conductive structures includes two or more of the elongate conductive structures being parallel.
The method of claim 1, wherein the elongate conductive structures define current- spreading electrodes.
The method of claim 1, wherein the anneal wavelength is about 10.6 microns.
The method of claim 1, further comprising scanning with the anneal laser beam over the conductive structures.
Filed via EFS 1/2 Attorney Docket No. VT₁₁₉-11U S₁ 8. The method of claim 1, wherein the GaN LED structures are formed on a product substrate and further comprising: dicing the product substrate to form LED dies from the GaN LED structures.
A GaN light-emitting diode (LED) apparatus suitable for laser annealing with a P- polarized anneal laser beam having an anneal wavelength, comprising: a GaN multilayer structure that includes p-GaN and n-GaN layers that sandwich an active layer; and a plurality of conductive structures formed atop either the p-GaN layer or the n- GaN layer, the conductive structures each being elongate with a long dimension and a short dimension and aligned generally in the same direction, with the short dimension being smaller than the anneal wavelength.
The apparatus of claim 10, wherein the elongate conductive structures have a surface that is generally rectangular.
The apparatus of claim 10, wherein the substantial alignment of the elongate conductive structures includes two or more of the elongate conductive structures being parallel.
The apparatus of claim 10, wherein the elongate conductive structures define current-spreading electrodes.
The apparatus of claim 10, wherein the short dimension is smaller than about 10.6 microns.
The apparatus of claim 10, wherein the conductive structures are disposed atop the p-GaN layer, and further including a transparent conducting layer between the conductive structures and the p-GaN layer.
Layer stacks claimed or described, ordered top of device to substrate.
GaN light-emitting diode (LED) structure
Materials described outside the worked examples.
p-GaN
GaN
elongate conductive structures
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–100 mm | — |
Thickness | 7–20 mm |
Related documents with shared materials, methods, properties, or citations.
transparent conducting layer (TCL)
indium tin oxide (ITO)
active layer (multiple quantum well, MQW)
GaInN/GaN superlattice
| — |
Thickness | 25–500 µm | — |
Temperature | 700–1500 °C | — |
Thickness | 50–100 µm | — |
transparent conducting layer (TCL)
indium tin oxide (ITO)
active layer (multiple quantum well, MQW)
GaInN/GaN superlattice
| — |
Thickness | 25–500 µm | — |
Temperature | 700–1500 °C | — |
Thickness | 50–100 µm | — |
transparent conducting layer (TCL)
indium tin oxide (ITO)
active layer (multiple quantum well, MQW)
GaInN/GaN superlattice
| — |
Thickness | 25–500 µm | — |
Temperature | 700–1500 °C | — |
Thickness | 50–100 µm | — |
transparent conducting layer (TCL)
indium tin oxide (ITO)
active layer (multiple quantum well, MQW)
GaInN/GaN superlattice
| — |
Thickness | 25–500 µm | — |
Temperature | 700–1500 °C | — |
Thickness | 50–100 µm | — |