Patent
US 8,815,621Method of forming p-type gallium nitride based semiconductor
Masaki UENO
US
Copyright © 2026 Matter42. All rights reserved.
Patent
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Patent
US 8,815,621Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A method of forming a p-type gallium nitride based semiconductor, the method comprising the steps of: supplying a source gas to a reactor to grow a gallium nitride based semiconductor region at a growth temperature by metal-organic chemical vapor deposition, the source gas containing a p-type dopant, and the gallium nitride based semiconductor region being doped with the p-type dopant; after growing the gallium nitride based semiconductor region, supplying gas to the reactor to form an atmosphere in the reactor, the gas containing at least one of monomethylamine and monoethylamine; and exposing the gallium nitride based semiconductor region to the atmosphere at a substrate temperature in the reactor.
The method according to Claim 21, wherein the substrate temperature is lower than the growth temperature.
The method according to Claim 21, wherein hydrogen gas is not supplied in the step of exposing the gallium nitride based semiconductor region.
The method according to Claim 21, wherein NH₃ is not supplied in the step of exposing the gallium nitride based semiconductor region.
The method according to Claim 21, wherein a molar ratio of the supplied at least one of monomethylamine and monoethylamine to a total flow is 3 % or less in the step of exposing the gallium nitride based semiconductor region. 2 Application No. 12/970,382 Docket No.: 87136-293543 Reply to Office Action of
The method according to Claim 21, wherein a molar ratio of the supplied at least one of monomethylamine and monoethylamine to a total flow is 0.00001 % or more.
The method according to Claim 21, wherein a partial pressure of the supplied at least one of monomethylamine and monoethylamine is 3 kPa or less.
The method according to Claim 21, wherein a partial pressure of the supplied at least one of monomethylamine and monoethylamine is 0.01 Pa or more.
The method according to Claim 21, wherein each of monomethylamine and monoethylamine has a water content of 50 ppm or less.
The method according to Claim 21, wherein the p-type dopant comprises at least one of magnesium and zinc.
The method according to Claim 21, wherein the atmosphere further comprises nitrogen in the step of exposing the gallium nitride based semiconductor region.
The method according to Claim 21, wherein the gallium nitride based semiconductor region comprises at least one of GaN, A l GaN, InGaN and InA l GaN.
The method according to Claim 21, wherein the exposed gallium nitride based semiconductor region has a hydrogen concentration and a p-type dopant concentration, the hydrogen concentration is less than the p-type dopant concentration, and a ratio of the hydrogen concentration to the p-type dopant concentration is less than 1.0. 3 Application No. 12/970,382 Docket No.: 87136-293543 Reply to Office Action of
A p-type gallium nitride based semiconductor formed by the method according to claim 21.
A method of forming a nitride semiconductor device comprising the steps o f: supplying a source gas to a reactor to grow a semiconductor region on a substrate by metal- organic chemical vapor deposition, the source gas containing a p-type dopant, the semiconductor region comprising at least one gallium nitride based semiconductor layer, and the gallium nitride based semiconductor region being doped with the p-type dopant; after growing the gallium nitride based semiconductor region, supplying gas to the reactor to form an atmosphere in the reactor, the gas containing at least one of monomethylamine and monoethylamine; and exposing the gallium nitride based semiconductor region to the atmosphere at a substrate temperature in the reactor.
The method according to Claim 36, wherein the gallium nitride based semiconductor region is formed using ammonia as a nitrogen source.
The method according to Claim 36, further comprising a step of growing an active layer prior to growing the gallium nitride based semiconductor region, the active layer being composed of gallium nitride based semiconductor, the active layer being provided between the gallium nitride based semiconductor region and an n-type gallium nitride based semiconductor region, 4 Application No. 12/970,382 Docket No.: 87136-293543 Reply to Office Action of the active layer emitting light, and the light being emitted in response to charge injection from the gallium nitride based semiconductor region and the n-type gallium nitride based semiconductor region, the active layer comprising a well layer, and the well layer being grown at a growth temperature in a range of 700 ° C to 750 °C.
The method according to Claim 36, further comprising a step of forming an electrode in contact with a surface of the gallium nitride based semiconductor region.
The method according to Claim 36, further comprising a step of growing an active layer prior to growing the gallium nitride based semiconductor region, the active layer being composed of gallium nitride based semiconductor.
A nitride semiconductor device formed by the method according to claim 36.
A method of forming an epitaxial wafer for a nitride semiconductor device, the method comprising the steps o f: supplying a source gas to a reactor to grow a semiconductor region on a substrate by metal- organic chemical vapor deposition, the source gas containing a p-type dopant, the semiconductor region comprising at least one gallium nitride based semiconductor layer, and the gallium nitride based semiconductor region being doped with the p-type dopant; after growing the gallium nitride based semiconductor region, supplying gas to the reactor to form an atmosphere in the reactor, the gas containing at least one of monomethylamine and monoethylamine; and 5 Application No. 12/970,382 Docket No.: 87136-293543 Reply to Office Action of forming a step flow morphology in a surface of the semiconductor region in the atmosphere in the reactor.
The method according to Claim 43, wherein the step flow morphology is observed with an atomic force microscope.
Layer stacks claimed or described, ordered top of device to substrate.
nitride semiconductor device
laser diode
Materials described outside the worked examples.
gallium nitride based semiconductor
monomethylamine
CH₃NH₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 700–750 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,815,621Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A method of forming a p-type gallium nitride based semiconductor, the method comprising the steps of: supplying a source gas to a reactor to grow a gallium nitride based semiconductor region at a growth temperature by metal-organic chemical vapor deposition, the source gas containing a p-type dopant, and the gallium nitride based semiconductor region being doped with the p-type dopant; after growing the gallium nitride based semiconductor region, supplying gas to the reactor to form an atmosphere in the reactor, the gas containing at least one of monomethylamine and monoethylamine; and exposing the gallium nitride based semiconductor region to the atmosphere at a substrate temperature in the reactor.
The method according to Claim 21, wherein the substrate temperature is lower than the growth temperature.
The method according to Claim 21, wherein hydrogen gas is not supplied in the step of exposing the gallium nitride based semiconductor region.
The method according to Claim 21, wherein NH₃ is not supplied in the step of exposing the gallium nitride based semiconductor region.
The method according to Claim 21, wherein a molar ratio of the supplied at least one of monomethylamine and monoethylamine to a total flow is 3 % or less in the step of exposing the gallium nitride based semiconductor region. 2 Application No. 12/970,382 Docket No.: 87136-293543 Reply to Office Action of
The method according to Claim 21, wherein a molar ratio of the supplied at least one of monomethylamine and monoethylamine to a total flow is 0.00001 % or more.
The method according to Claim 21, wherein a partial pressure of the supplied at least one of monomethylamine and monoethylamine is 3 kPa or less.
The method according to Claim 21, wherein a partial pressure of the supplied at least one of monomethylamine and monoethylamine is 0.01 Pa or more.
The method according to Claim 21, wherein each of monomethylamine and monoethylamine has a water content of 50 ppm or less.
The method according to Claim 21, wherein the p-type dopant comprises at least one of magnesium and zinc.
The method according to Claim 21, wherein the atmosphere further comprises nitrogen in the step of exposing the gallium nitride based semiconductor region.
The method according to Claim 21, wherein the gallium nitride based semiconductor region comprises at least one of GaN, A l GaN, InGaN and InA l GaN.
The method according to Claim 21, wherein the exposed gallium nitride based semiconductor region has a hydrogen concentration and a p-type dopant concentration, the hydrogen concentration is less than the p-type dopant concentration, and a ratio of the hydrogen concentration to the p-type dopant concentration is less than 1.0. 3 Application No. 12/970,382 Docket No.: 87136-293543 Reply to Office Action of
A p-type gallium nitride based semiconductor formed by the method according to claim 21.
A method of forming a nitride semiconductor device comprising the steps o f: supplying a source gas to a reactor to grow a semiconductor region on a substrate by metal- organic chemical vapor deposition, the source gas containing a p-type dopant, the semiconductor region comprising at least one gallium nitride based semiconductor layer, and the gallium nitride based semiconductor region being doped with the p-type dopant; after growing the gallium nitride based semiconductor region, supplying gas to the reactor to form an atmosphere in the reactor, the gas containing at least one of monomethylamine and monoethylamine; and exposing the gallium nitride based semiconductor region to the atmosphere at a substrate temperature in the reactor.
The method according to Claim 36, wherein the gallium nitride based semiconductor region is formed using ammonia as a nitrogen source.
The method according to Claim 36, further comprising a step of growing an active layer prior to growing the gallium nitride based semiconductor region, the active layer being composed of gallium nitride based semiconductor, the active layer being provided between the gallium nitride based semiconductor region and an n-type gallium nitride based semiconductor region, 4 Application No. 12/970,382 Docket No.: 87136-293543 Reply to Office Action of the active layer emitting light, and the light being emitted in response to charge injection from the gallium nitride based semiconductor region and the n-type gallium nitride based semiconductor region, the active layer comprising a well layer, and the well layer being grown at a growth temperature in a range of 700 ° C to 750 °C.
The method according to Claim 36, further comprising a step of forming an electrode in contact with a surface of the gallium nitride based semiconductor region.
The method according to Claim 36, further comprising a step of growing an active layer prior to growing the gallium nitride based semiconductor region, the active layer being composed of gallium nitride based semiconductor.
A nitride semiconductor device formed by the method according to claim 36.
A method of forming an epitaxial wafer for a nitride semiconductor device, the method comprising the steps o f: supplying a source gas to a reactor to grow a semiconductor region on a substrate by metal- organic chemical vapor deposition, the source gas containing a p-type dopant, the semiconductor region comprising at least one gallium nitride based semiconductor layer, and the gallium nitride based semiconductor region being doped with the p-type dopant; after growing the gallium nitride based semiconductor region, supplying gas to the reactor to form an atmosphere in the reactor, the gas containing at least one of monomethylamine and monoethylamine; and 5 Application No. 12/970,382 Docket No.: 87136-293543 Reply to Office Action of forming a step flow morphology in a surface of the semiconductor region in the atmosphere in the reactor.
The method according to Claim 43, wherein the step flow morphology is observed with an atomic force microscope.
Layer stacks claimed or described, ordered top of device to substrate.
nitride semiconductor device
laser diode
Materials described outside the worked examples.
gallium nitride based semiconductor
monomethylamine
CH₃NH₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 700–750 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,815,621Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A method of forming a p-type gallium nitride based semiconductor, the method comprising the steps of: supplying a source gas to a reactor to grow a gallium nitride based semiconductor region at a growth temperature by metal-organic chemical vapor deposition, the source gas containing a p-type dopant, and the gallium nitride based semiconductor region being doped with the p-type dopant; after growing the gallium nitride based semiconductor region, supplying gas to the reactor to form an atmosphere in the reactor, the gas containing at least one of monomethylamine and monoethylamine; and exposing the gallium nitride based semiconductor region to the atmosphere at a substrate temperature in the reactor.
The method according to Claim 21, wherein the substrate temperature is lower than the growth temperature.
The method according to Claim 21, wherein hydrogen gas is not supplied in the step of exposing the gallium nitride based semiconductor region.
The method according to Claim 21, wherein NH₃ is not supplied in the step of exposing the gallium nitride based semiconductor region.
The method according to Claim 21, wherein a molar ratio of the supplied at least one of monomethylamine and monoethylamine to a total flow is 3 % or less in the step of exposing the gallium nitride based semiconductor region. 2 Application No. 12/970,382 Docket No.: 87136-293543 Reply to Office Action of
The method according to Claim 21, wherein a molar ratio of the supplied at least one of monomethylamine and monoethylamine to a total flow is 0.00001 % or more.
The method according to Claim 21, wherein a partial pressure of the supplied at least one of monomethylamine and monoethylamine is 3 kPa or less.
The method according to Claim 21, wherein a partial pressure of the supplied at least one of monomethylamine and monoethylamine is 0.01 Pa or more.
The method according to Claim 21, wherein each of monomethylamine and monoethylamine has a water content of 50 ppm or less.
The method according to Claim 21, wherein the p-type dopant comprises at least one of magnesium and zinc.
The method according to Claim 21, wherein the atmosphere further comprises nitrogen in the step of exposing the gallium nitride based semiconductor region.
The method according to Claim 21, wherein the gallium nitride based semiconductor region comprises at least one of GaN, A l GaN, InGaN and InA l GaN.
The method according to Claim 21, wherein the exposed gallium nitride based semiconductor region has a hydrogen concentration and a p-type dopant concentration, the hydrogen concentration is less than the p-type dopant concentration, and a ratio of the hydrogen concentration to the p-type dopant concentration is less than 1.0. 3 Application No. 12/970,382 Docket No.: 87136-293543 Reply to Office Action of
A p-type gallium nitride based semiconductor formed by the method according to claim 21.
A method of forming a nitride semiconductor device comprising the steps o f: supplying a source gas to a reactor to grow a semiconductor region on a substrate by metal- organic chemical vapor deposition, the source gas containing a p-type dopant, the semiconductor region comprising at least one gallium nitride based semiconductor layer, and the gallium nitride based semiconductor region being doped with the p-type dopant; after growing the gallium nitride based semiconductor region, supplying gas to the reactor to form an atmosphere in the reactor, the gas containing at least one of monomethylamine and monoethylamine; and exposing the gallium nitride based semiconductor region to the atmosphere at a substrate temperature in the reactor.
The method according to Claim 36, wherein the gallium nitride based semiconductor region is formed using ammonia as a nitrogen source.
The method according to Claim 36, further comprising a step of growing an active layer prior to growing the gallium nitride based semiconductor region, the active layer being composed of gallium nitride based semiconductor, the active layer being provided between the gallium nitride based semiconductor region and an n-type gallium nitride based semiconductor region, 4 Application No. 12/970,382 Docket No.: 87136-293543 Reply to Office Action of the active layer emitting light, and the light being emitted in response to charge injection from the gallium nitride based semiconductor region and the n-type gallium nitride based semiconductor region, the active layer comprising a well layer, and the well layer being grown at a growth temperature in a range of 700 ° C to 750 °C.
The method according to Claim 36, further comprising a step of forming an electrode in contact with a surface of the gallium nitride based semiconductor region.
The method according to Claim 36, further comprising a step of growing an active layer prior to growing the gallium nitride based semiconductor region, the active layer being composed of gallium nitride based semiconductor.
A nitride semiconductor device formed by the method according to claim 36.
A method of forming an epitaxial wafer for a nitride semiconductor device, the method comprising the steps o f: supplying a source gas to a reactor to grow a semiconductor region on a substrate by metal- organic chemical vapor deposition, the source gas containing a p-type dopant, the semiconductor region comprising at least one gallium nitride based semiconductor layer, and the gallium nitride based semiconductor region being doped with the p-type dopant; after growing the gallium nitride based semiconductor region, supplying gas to the reactor to form an atmosphere in the reactor, the gas containing at least one of monomethylamine and monoethylamine; and 5 Application No. 12/970,382 Docket No.: 87136-293543 Reply to Office Action of forming a step flow morphology in a surface of the semiconductor region in the atmosphere in the reactor.
The method according to Claim 43, wherein the step flow morphology is observed with an atomic force microscope.
Layer stacks claimed or described, ordered top of device to substrate.
nitride semiconductor device
laser diode
Materials described outside the worked examples.
gallium nitride based semiconductor
monomethylamine
CH₃NH₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 700–750 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,815,621Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
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canceled
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A method of forming a p-type gallium nitride based semiconductor, the method comprising the steps of: supplying a source gas to a reactor to grow a gallium nitride based semiconductor region at a growth temperature by metal-organic chemical vapor deposition, the source gas containing a p-type dopant, and the gallium nitride based semiconductor region being doped with the p-type dopant; after growing the gallium nitride based semiconductor region, supplying gas to the reactor to form an atmosphere in the reactor, the gas containing at least one of monomethylamine and monoethylamine; and exposing the gallium nitride based semiconductor region to the atmosphere at a substrate temperature in the reactor.
The method according to Claim 21, wherein the substrate temperature is lower than the growth temperature.
The method according to Claim 21, wherein hydrogen gas is not supplied in the step of exposing the gallium nitride based semiconductor region.
The method according to Claim 21, wherein NH₃ is not supplied in the step of exposing the gallium nitride based semiconductor region.
The method according to Claim 21, wherein a molar ratio of the supplied at least one of monomethylamine and monoethylamine to a total flow is 3 % or less in the step of exposing the gallium nitride based semiconductor region. 2 Application No. 12/970,382 Docket No.: 87136-293543 Reply to Office Action of
The method according to Claim 21, wherein a molar ratio of the supplied at least one of monomethylamine and monoethylamine to a total flow is 0.00001 % or more.
The method according to Claim 21, wherein a partial pressure of the supplied at least one of monomethylamine and monoethylamine is 3 kPa or less.
The method according to Claim 21, wherein a partial pressure of the supplied at least one of monomethylamine and monoethylamine is 0.01 Pa or more.
The method according to Claim 21, wherein each of monomethylamine and monoethylamine has a water content of 50 ppm or less.
The method according to Claim 21, wherein the p-type dopant comprises at least one of magnesium and zinc.
The method according to Claim 21, wherein the atmosphere further comprises nitrogen in the step of exposing the gallium nitride based semiconductor region.
The method according to Claim 21, wherein the gallium nitride based semiconductor region comprises at least one of GaN, A l GaN, InGaN and InA l GaN.
The method according to Claim 21, wherein the exposed gallium nitride based semiconductor region has a hydrogen concentration and a p-type dopant concentration, the hydrogen concentration is less than the p-type dopant concentration, and a ratio of the hydrogen concentration to the p-type dopant concentration is less than 1.0. 3 Application No. 12/970,382 Docket No.: 87136-293543 Reply to Office Action of
A p-type gallium nitride based semiconductor formed by the method according to claim 21.
A method of forming a nitride semiconductor device comprising the steps o f: supplying a source gas to a reactor to grow a semiconductor region on a substrate by metal- organic chemical vapor deposition, the source gas containing a p-type dopant, the semiconductor region comprising at least one gallium nitride based semiconductor layer, and the gallium nitride based semiconductor region being doped with the p-type dopant; after growing the gallium nitride based semiconductor region, supplying gas to the reactor to form an atmosphere in the reactor, the gas containing at least one of monomethylamine and monoethylamine; and exposing the gallium nitride based semiconductor region to the atmosphere at a substrate temperature in the reactor.
The method according to Claim 36, wherein the gallium nitride based semiconductor region is formed using ammonia as a nitrogen source.
The method according to Claim 36, further comprising a step of growing an active layer prior to growing the gallium nitride based semiconductor region, the active layer being composed of gallium nitride based semiconductor, the active layer being provided between the gallium nitride based semiconductor region and an n-type gallium nitride based semiconductor region, 4 Application No. 12/970,382 Docket No.: 87136-293543 Reply to Office Action of the active layer emitting light, and the light being emitted in response to charge injection from the gallium nitride based semiconductor region and the n-type gallium nitride based semiconductor region, the active layer comprising a well layer, and the well layer being grown at a growth temperature in a range of 700 ° C to 750 °C.
The method according to Claim 36, further comprising a step of forming an electrode in contact with a surface of the gallium nitride based semiconductor region.
The method according to Claim 36, further comprising a step of growing an active layer prior to growing the gallium nitride based semiconductor region, the active layer being composed of gallium nitride based semiconductor.
A nitride semiconductor device formed by the method according to claim 36.
A method of forming an epitaxial wafer for a nitride semiconductor device, the method comprising the steps o f: supplying a source gas to a reactor to grow a semiconductor region on a substrate by metal- organic chemical vapor deposition, the source gas containing a p-type dopant, the semiconductor region comprising at least one gallium nitride based semiconductor layer, and the gallium nitride based semiconductor region being doped with the p-type dopant; after growing the gallium nitride based semiconductor region, supplying gas to the reactor to form an atmosphere in the reactor, the gas containing at least one of monomethylamine and monoethylamine; and 5 Application No. 12/970,382 Docket No.: 87136-293543 Reply to Office Action of forming a step flow morphology in a surface of the semiconductor region in the atmosphere in the reactor.
The method according to Claim 43, wherein the step flow morphology is observed with an atomic force microscope.
Layer stacks claimed or described, ordered top of device to substrate.
nitride semiconductor device
laser diode
Materials described outside the worked examples.
gallium nitride based semiconductor
monomethylamine
CH₃NH₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 700–750 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
light emitting diode
monoethylamine
C₂H₅NH₂
magnesium
Mg
zinc
Zn
GaN
AlGaN
InGaN
InAlGaN
| — |
Flow Rate | 1–10 sccm | — |
Temperature | ≤ 500 °C | — |
LASER ANNEALING OF GAN LEDS WITH REDUCED PATTERN EFFECTS
light emitting diode
monoethylamine
C₂H₅NH₂
magnesium
Mg
zinc
Zn
GaN
AlGaN
InGaN
InAlGaN
| — |
Flow Rate | 1–10 sccm | — |
Temperature | ≤ 500 °C | — |
LASER ANNEALING OF GAN LEDS WITH REDUCED PATTERN EFFECTS
light emitting diode
monoethylamine
C₂H₅NH₂
magnesium
Mg
zinc
Zn
GaN
AlGaN
InGaN
InAlGaN
| — |
Flow Rate | 1–10 sccm | — |
Temperature | ≤ 500 °C | — |
LASER ANNEALING OF GAN LEDS WITH REDUCED PATTERN EFFECTS
light emitting diode
monoethylamine
C₂H₅NH₂
magnesium
Mg
zinc
Zn
GaN
AlGaN
InGaN
InAlGaN
| — |
Flow Rate | 1–10 sccm | — |
Temperature | ≤ 500 °C | — |