Patent
US 8,415,180of Invention: METHOD FOR FABRICATING WAFER
Shin Hashimoto
US
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US 8,415,180Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a wafer product for a gallium nitride based semiconductor optical device, comprising the steps of: preparing a gallium oxide substrate; 5 forming a laminate body on a primary surface of the gallium oxide substrate, the laminate body comprising Group III nitrides; forming an active layer, after forming the laminate body; and growing a gallium nitride based semiconductor 1 ayer on the active layer, 10 forming the laminate body comprises: placing the gallium oxide substrate in a growth reactor and thereafter growing a Group III nitride buffer layer at a first temperature on the primary surface of the gallium oxide substrate; changing a substrate temperature from the first temperature to a 15 second temperature higher than the first temperature, after growing the Group III nitride buffer layer, the second temperature being higher than the first temperature; exposing the gallium oxide substrate and the Group III nitride buffer layer to an atmosphere in the growth reactor at the substrate 20 temperature of the second temperature, while supplying hydrogen and nitrogen into the growth reactor; and depositing a Group III nitride semiconductor layer for the gallium nitride based semiconductor optical device by a metal-organic vapor phase epitaxy method, after exposing the gallium oxide substrate 25 and the Group III nitride buffer layer to the atmosphere in the growth reactor, 36 FP₀ 9-0566-00 the Group III nitride semiconductor layer having a first conductivity type, the gallium nitride based semiconductor layer having a second conductivity type, and 5 a thickness of the Group III nitride buffer layer being smaller than a thickness of the Group III nitride semiconductor layer.
The method according to claim 1, wherein the second temperature is not less than 950 Celsius degrees.
The method according to claim 1 or claim 2, wherein in 10 exposing the gallium oxide substrate and the Group III nitride buffer layer to the atmosphere in the growth reactor, a flow rate of hydrogen is not less than a flow rate of nitrogen.
The method according to any one of claims 1 to 3, wherein a processing time in exposing to the atmosphere is not less than 15 10 seconds.
The method according to any one of claims 1 to 4, wherein a thickness of the Group III nitride buffer layer is not less than 2 nanometers.
The method according to any one of claims 1 to 5, 20 wherein the Group III nitride buffer layer includes at least one of a GaN layer, an AlGaN layer, and an A l N layer.
The method according to any one of claims 1 to 6, wherein the Group III nitride buffer layer includes a GaN layer.
The method according to any one of claims 1 to 7, 25 wherein the Group III nitride semiconductor layer comprises GaN and AlGaN.
FP₀ 9-0566-00 9. The method according to any one of claims 1 to 8, wherein the primary surface of the gallium oxide substrate is a (100) plane.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride based semiconductor optical device wafer
Materials described outside the worked examples.
gallium oxide substrate
Ga₂O₃
Group III nitride buffer layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Group III nitride buffer layer thickness lower bound | 2 nm | Group III nitride buffer layer |
Group III nitride buffer layer thickness upper bound | 100 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,415,180Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a wafer product for a gallium nitride based semiconductor optical device, comprising the steps of: preparing a gallium oxide substrate; 5 forming a laminate body on a primary surface of the gallium oxide substrate, the laminate body comprising Group III nitrides; forming an active layer, after forming the laminate body; and growing a gallium nitride based semiconductor 1 ayer on the active layer, 10 forming the laminate body comprises: placing the gallium oxide substrate in a growth reactor and thereafter growing a Group III nitride buffer layer at a first temperature on the primary surface of the gallium oxide substrate; changing a substrate temperature from the first temperature to a 15 second temperature higher than the first temperature, after growing the Group III nitride buffer layer, the second temperature being higher than the first temperature; exposing the gallium oxide substrate and the Group III nitride buffer layer to an atmosphere in the growth reactor at the substrate 20 temperature of the second temperature, while supplying hydrogen and nitrogen into the growth reactor; and depositing a Group III nitride semiconductor layer for the gallium nitride based semiconductor optical device by a metal-organic vapor phase epitaxy method, after exposing the gallium oxide substrate 25 and the Group III nitride buffer layer to the atmosphere in the growth reactor, 36 FP₀ 9-0566-00 the Group III nitride semiconductor layer having a first conductivity type, the gallium nitride based semiconductor layer having a second conductivity type, and 5 a thickness of the Group III nitride buffer layer being smaller than a thickness of the Group III nitride semiconductor layer.
The method according to claim 1, wherein the second temperature is not less than 950 Celsius degrees.
The method according to claim 1 or claim 2, wherein in 10 exposing the gallium oxide substrate and the Group III nitride buffer layer to the atmosphere in the growth reactor, a flow rate of hydrogen is not less than a flow rate of nitrogen.
The method according to any one of claims 1 to 3, wherein a processing time in exposing to the atmosphere is not less than 15 10 seconds.
The method according to any one of claims 1 to 4, wherein a thickness of the Group III nitride buffer layer is not less than 2 nanometers.
The method according to any one of claims 1 to 5, 20 wherein the Group III nitride buffer layer includes at least one of a GaN layer, an AlGaN layer, and an A l N layer.
The method according to any one of claims 1 to 6, wherein the Group III nitride buffer layer includes a GaN layer.
The method according to any one of claims 1 to 7, 25 wherein the Group III nitride semiconductor layer comprises GaN and AlGaN.
FP₀ 9-0566-00 9. The method according to any one of claims 1 to 8, wherein the primary surface of the gallium oxide substrate is a (100) plane.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride based semiconductor optical device wafer
Materials described outside the worked examples.
gallium oxide substrate
Ga₂O₃
Group III nitride buffer layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Group III nitride buffer layer thickness lower bound | 2 nm | Group III nitride buffer layer |
Group III nitride buffer layer thickness upper bound | 100 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,415,180Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a wafer product for a gallium nitride based semiconductor optical device, comprising the steps of: preparing a gallium oxide substrate; 5 forming a laminate body on a primary surface of the gallium oxide substrate, the laminate body comprising Group III nitrides; forming an active layer, after forming the laminate body; and growing a gallium nitride based semiconductor 1 ayer on the active layer, 10 forming the laminate body comprises: placing the gallium oxide substrate in a growth reactor and thereafter growing a Group III nitride buffer layer at a first temperature on the primary surface of the gallium oxide substrate; changing a substrate temperature from the first temperature to a 15 second temperature higher than the first temperature, after growing the Group III nitride buffer layer, the second temperature being higher than the first temperature; exposing the gallium oxide substrate and the Group III nitride buffer layer to an atmosphere in the growth reactor at the substrate 20 temperature of the second temperature, while supplying hydrogen and nitrogen into the growth reactor; and depositing a Group III nitride semiconductor layer for the gallium nitride based semiconductor optical device by a metal-organic vapor phase epitaxy method, after exposing the gallium oxide substrate 25 and the Group III nitride buffer layer to the atmosphere in the growth reactor, 36 FP₀ 9-0566-00 the Group III nitride semiconductor layer having a first conductivity type, the gallium nitride based semiconductor layer having a second conductivity type, and 5 a thickness of the Group III nitride buffer layer being smaller than a thickness of the Group III nitride semiconductor layer.
The method according to claim 1, wherein the second temperature is not less than 950 Celsius degrees.
The method according to claim 1 or claim 2, wherein in 10 exposing the gallium oxide substrate and the Group III nitride buffer layer to the atmosphere in the growth reactor, a flow rate of hydrogen is not less than a flow rate of nitrogen.
The method according to any one of claims 1 to 3, wherein a processing time in exposing to the atmosphere is not less than 15 10 seconds.
The method according to any one of claims 1 to 4, wherein a thickness of the Group III nitride buffer layer is not less than 2 nanometers.
The method according to any one of claims 1 to 5, 20 wherein the Group III nitride buffer layer includes at least one of a GaN layer, an AlGaN layer, and an A l N layer.
The method according to any one of claims 1 to 6, wherein the Group III nitride buffer layer includes a GaN layer.
The method according to any one of claims 1 to 7, 25 wherein the Group III nitride semiconductor layer comprises GaN and AlGaN.
FP₀ 9-0566-00 9. The method according to any one of claims 1 to 8, wherein the primary surface of the gallium oxide substrate is a (100) plane.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride based semiconductor optical device wafer
Materials described outside the worked examples.
gallium oxide substrate
Ga₂O₃
Group III nitride buffer layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Group III nitride buffer layer thickness lower bound | 2 nm | Group III nitride buffer layer |
Group III nitride buffer layer thickness upper bound | 100 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,415,180Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a wafer product for a gallium nitride based semiconductor optical device, comprising the steps of: preparing a gallium oxide substrate; 5 forming a laminate body on a primary surface of the gallium oxide substrate, the laminate body comprising Group III nitrides; forming an active layer, after forming the laminate body; and growing a gallium nitride based semiconductor 1 ayer on the active layer, 10 forming the laminate body comprises: placing the gallium oxide substrate in a growth reactor and thereafter growing a Group III nitride buffer layer at a first temperature on the primary surface of the gallium oxide substrate; changing a substrate temperature from the first temperature to a 15 second temperature higher than the first temperature, after growing the Group III nitride buffer layer, the second temperature being higher than the first temperature; exposing the gallium oxide substrate and the Group III nitride buffer layer to an atmosphere in the growth reactor at the substrate 20 temperature of the second temperature, while supplying hydrogen and nitrogen into the growth reactor; and depositing a Group III nitride semiconductor layer for the gallium nitride based semiconductor optical device by a metal-organic vapor phase epitaxy method, after exposing the gallium oxide substrate 25 and the Group III nitride buffer layer to the atmosphere in the growth reactor, 36 FP₀ 9-0566-00 the Group III nitride semiconductor layer having a first conductivity type, the gallium nitride based semiconductor layer having a second conductivity type, and 5 a thickness of the Group III nitride buffer layer being smaller than a thickness of the Group III nitride semiconductor layer.
The method according to claim 1, wherein the second temperature is not less than 950 Celsius degrees.
The method according to claim 1 or claim 2, wherein in 10 exposing the gallium oxide substrate and the Group III nitride buffer layer to the atmosphere in the growth reactor, a flow rate of hydrogen is not less than a flow rate of nitrogen.
The method according to any one of claims 1 to 3, wherein a processing time in exposing to the atmosphere is not less than 15 10 seconds.
The method according to any one of claims 1 to 4, wherein a thickness of the Group III nitride buffer layer is not less than 2 nanometers.
The method according to any one of claims 1 to 5, 20 wherein the Group III nitride buffer layer includes at least one of a GaN layer, an AlGaN layer, and an A l N layer.
The method according to any one of claims 1 to 6, wherein the Group III nitride buffer layer includes a GaN layer.
The method according to any one of claims 1 to 7, 25 wherein the Group III nitride semiconductor layer comprises GaN and AlGaN.
FP₀ 9-0566-00 9. The method according to any one of claims 1 to 8, wherein the primary surface of the gallium oxide substrate is a (100) plane.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride based semiconductor optical device wafer
Materials described outside the worked examples.
gallium oxide substrate
Ga₂O₃
Group III nitride buffer layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Group III nitride buffer layer thickness lower bound | 2 nm | Group III nitride buffer layer |
Group III nitride buffer layer thickness upper bound | 100 nm |
Related documents with shared materials, methods, properties, or citations.
Group III nitride semiconductor layer
GaN
AlGaN
AlN
Group III nitride buffer layer |
Group III nitride buffer layer thickness preferred value | 10 nm | Group III nitride buffer layer |
Duration | 0566-00 second | — |
Thickness | ≤ 2 nm | — |
Duration | ≤ 10 seconds | — |
Group III nitride semiconductor layer
GaN
AlGaN
AlN
Group III nitride buffer layer |
Group III nitride buffer layer thickness preferred value | 10 nm | Group III nitride buffer layer |
Duration | 0566-00 second | — |
Thickness | ≤ 2 nm | — |
Duration | ≤ 10 seconds | — |
Group III nitride semiconductor layer
GaN
AlGaN
AlN
Group III nitride buffer layer |
Group III nitride buffer layer thickness preferred value | 10 nm | Group III nitride buffer layer |
Duration | 0566-00 second | — |
Thickness | ≤ 2 nm | — |
Duration | ≤ 10 seconds | — |
Group III nitride semiconductor layer
GaN
AlGaN
AlN
Group III nitride buffer layer |
Group III nitride buffer layer thickness preferred value | 10 nm | Group III nitride buffer layer |
Duration | 0566-00 second | — |
Thickness | ≤ 2 nm | — |
Duration | ≤ 10 seconds | — |