Patent
US 10,186,630SEED WAFER FOR GaN THICKENING USING GAS- OR LIQUID-PHASE EPITAXY
Francois J. HENLEY
QMAT, Inc.·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,186,630Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B. Surface treatment can involve thermal, chemical, and/or plasma treatments. [0042] In step 216, Figure 2A further shows the growth of additional G aN …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
A method as in claim [[1]] 17 further comprising forming a precursor layer over the layer of additional material. Currently amended
A method as in claim 2 further comprising depositing a GaN seed layer on the precursor layer prior to performing an epitaxial growth technique. Original
A method as in claim 2 wherein the precursor layer comprises A iN. Original
A method as in claim [[1]] 17 wherein forming the GaN comprises performing an epitaxial growth technique. Currently amended
A method as in claim 7 wherein the epitaxial growth technique comprises Liquid Phase Epitaxy (LPE). Original
A method as in claim 7 wherein the epitaxial growth technique comprises Hydride Vapor Phase Epitaxy (H V PE). Original
10-12. Canceled
Canceled
A method as in claim [[12]] 17 wherein the silicon carbide comprises 4H single crystal silicon carbide. Currently amended
A method as in claim [[12]] 17 wherein the silicon carbide comprises 6 H single crystal silicon carbide. Currently amended
A method as in claim [[12]] 17 wherein the silicon carbide comprises 3C single crystal silicon carbide. Currently amended
A method as in claim [[12]] 17 wherein the first cleave process comprises a post-implant, prebonding annealing. Currently amended
A method comprising: providing a substrate bearing a bonding layer; transferring a la y er of additional material comprising silicon carbide to the bonding la yer utilizing a first cleave process, the transferring performed within a bonded thermal budget; forming G aN over the layer of additional material, performing a thermal treatment of an implanted donor of the additional material prior to the bonding, in order to reduce a thermal budget of the first cleave process, wherein the thermal treatment is performed at a first temperature about 25-50 0 C lower than a second temperature required to develop blistering; and performing a second cleave process to transfer a layer from the G aN for incorporation into an opto-electronic device, wherein the thermal treatment allows the second cleave process to also be performed within the bonded thermal budget. Currently amended
A method as in claim 17 wherein the thermal treatment comprises an annealing. Original
A method as in claim 17 wherein the thermal treatment comprises laser exposure. Original
20-21. Canceled
Canceled
A method as in claim [[1]] 17 wherein the additional material is separated by the cleave process from a bulk material having a width of 2" or greater. Currently amended
A method as in claim [[1]] 17 wherein the substrate comprises polycrystalline A lN. Currently amended
A method as in claim [[1]] 17 wherein the substrate comprises Mullite. Currently amended
A method as in claim [[1]] 17 wherein the substrate comprises molybdenum. Currently amended
A method as in claim [[1]] 17 wherein the substrate comprises tungsten. Currently amended
Canceled
A method as in claim [[27]] 17 wherein the second cleave process comprises implanting particles into the GaN material. Currently amended
A method as in claim [[27]] 1 7 wherein the
A method as in claim [[27]] 17 wherein the Currently amended layer is free- standing. Currently amended layer is transferred to a supporting substrate.
Layer stacks claimed or described, ordered top of device to substrate.
opto-electronic device (HB-LED)
Materials described outside the worked examples.
GaN
AlN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN seed layer thickness | 100–5000 | GaN |
additional GaN epitaxial layer thickness | 0.01–10 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,186,630Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B. Surface treatment can involve thermal, chemical, and/or plasma treatments. [0042] In step 216, Figure 2A further shows the growth of additional G aN …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
A method as in claim [[1]] 17 further comprising forming a precursor layer over the layer of additional material. Currently amended
A method as in claim 2 further comprising depositing a GaN seed layer on the precursor layer prior to performing an epitaxial growth technique. Original
A method as in claim 2 wherein the precursor layer comprises A iN. Original
A method as in claim [[1]] 17 wherein forming the GaN comprises performing an epitaxial growth technique. Currently amended
A method as in claim 7 wherein the epitaxial growth technique comprises Liquid Phase Epitaxy (LPE). Original
A method as in claim 7 wherein the epitaxial growth technique comprises Hydride Vapor Phase Epitaxy (H V PE). Original
10-12. Canceled
Canceled
A method as in claim [[12]] 17 wherein the silicon carbide comprises 4H single crystal silicon carbide. Currently amended
A method as in claim [[12]] 17 wherein the silicon carbide comprises 6 H single crystal silicon carbide. Currently amended
A method as in claim [[12]] 17 wherein the silicon carbide comprises 3C single crystal silicon carbide. Currently amended
A method as in claim [[12]] 17 wherein the first cleave process comprises a post-implant, prebonding annealing. Currently amended
A method comprising: providing a substrate bearing a bonding layer; transferring a la y er of additional material comprising silicon carbide to the bonding la yer utilizing a first cleave process, the transferring performed within a bonded thermal budget; forming G aN over the layer of additional material, performing a thermal treatment of an implanted donor of the additional material prior to the bonding, in order to reduce a thermal budget of the first cleave process, wherein the thermal treatment is performed at a first temperature about 25-50 0 C lower than a second temperature required to develop blistering; and performing a second cleave process to transfer a layer from the G aN for incorporation into an opto-electronic device, wherein the thermal treatment allows the second cleave process to also be performed within the bonded thermal budget. Currently amended
A method as in claim 17 wherein the thermal treatment comprises an annealing. Original
A method as in claim 17 wherein the thermal treatment comprises laser exposure. Original
20-21. Canceled
Canceled
A method as in claim [[1]] 17 wherein the additional material is separated by the cleave process from a bulk material having a width of 2" or greater. Currently amended
A method as in claim [[1]] 17 wherein the substrate comprises polycrystalline A lN. Currently amended
A method as in claim [[1]] 17 wherein the substrate comprises Mullite. Currently amended
A method as in claim [[1]] 17 wherein the substrate comprises molybdenum. Currently amended
A method as in claim [[1]] 17 wherein the substrate comprises tungsten. Currently amended
Canceled
A method as in claim [[27]] 17 wherein the second cleave process comprises implanting particles into the GaN material. Currently amended
A method as in claim [[27]] 1 7 wherein the
A method as in claim [[27]] 17 wherein the Currently amended layer is free- standing. Currently amended layer is transferred to a supporting substrate.
Layer stacks claimed or described, ordered top of device to substrate.
opto-electronic device (HB-LED)
Materials described outside the worked examples.
GaN
AlN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN seed layer thickness | 100–5000 | GaN |
additional GaN epitaxial layer thickness | 0.01–10 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,186,630Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B. Surface treatment can involve thermal, chemical, and/or plasma treatments. [0042] In step 216, Figure 2A further shows the growth of additional G aN …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
A method as in claim [[1]] 17 further comprising forming a precursor layer over the layer of additional material. Currently amended
A method as in claim 2 further comprising depositing a GaN seed layer on the precursor layer prior to performing an epitaxial growth technique. Original
A method as in claim 2 wherein the precursor layer comprises A iN. Original
A method as in claim [[1]] 17 wherein forming the GaN comprises performing an epitaxial growth technique. Currently amended
A method as in claim 7 wherein the epitaxial growth technique comprises Liquid Phase Epitaxy (LPE). Original
A method as in claim 7 wherein the epitaxial growth technique comprises Hydride Vapor Phase Epitaxy (H V PE). Original
10-12. Canceled
Canceled
A method as in claim [[12]] 17 wherein the silicon carbide comprises 4H single crystal silicon carbide. Currently amended
A method as in claim [[12]] 17 wherein the silicon carbide comprises 6 H single crystal silicon carbide. Currently amended
A method as in claim [[12]] 17 wherein the silicon carbide comprises 3C single crystal silicon carbide. Currently amended
A method as in claim [[12]] 17 wherein the first cleave process comprises a post-implant, prebonding annealing. Currently amended
A method comprising: providing a substrate bearing a bonding layer; transferring a la y er of additional material comprising silicon carbide to the bonding la yer utilizing a first cleave process, the transferring performed within a bonded thermal budget; forming G aN over the layer of additional material, performing a thermal treatment of an implanted donor of the additional material prior to the bonding, in order to reduce a thermal budget of the first cleave process, wherein the thermal treatment is performed at a first temperature about 25-50 0 C lower than a second temperature required to develop blistering; and performing a second cleave process to transfer a layer from the G aN for incorporation into an opto-electronic device, wherein the thermal treatment allows the second cleave process to also be performed within the bonded thermal budget. Currently amended
A method as in claim 17 wherein the thermal treatment comprises an annealing. Original
A method as in claim 17 wherein the thermal treatment comprises laser exposure. Original
20-21. Canceled
Canceled
A method as in claim [[1]] 17 wherein the additional material is separated by the cleave process from a bulk material having a width of 2" or greater. Currently amended
A method as in claim [[1]] 17 wherein the substrate comprises polycrystalline A lN. Currently amended
A method as in claim [[1]] 17 wherein the substrate comprises Mullite. Currently amended
A method as in claim [[1]] 17 wherein the substrate comprises molybdenum. Currently amended
A method as in claim [[1]] 17 wherein the substrate comprises tungsten. Currently amended
Canceled
A method as in claim [[27]] 17 wherein the second cleave process comprises implanting particles into the GaN material. Currently amended
A method as in claim [[27]] 1 7 wherein the
A method as in claim [[27]] 17 wherein the Currently amended layer is free- standing. Currently amended layer is transferred to a supporting substrate.
Layer stacks claimed or described, ordered top of device to substrate.
opto-electronic device (HB-LED)
Materials described outside the worked examples.
GaN
AlN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN seed layer thickness | 100–5000 | GaN |
additional GaN epitaxial layer thickness | 0.01–10 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,186,630Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B. Surface treatment can involve thermal, chemical, and/or plasma treatments. [0042] In step 216, Figure 2A further shows the growth of additional G aN …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
A method as in claim [[1]] 17 further comprising forming a precursor layer over the layer of additional material. Currently amended
A method as in claim 2 further comprising depositing a GaN seed layer on the precursor layer prior to performing an epitaxial growth technique. Original
A method as in claim 2 wherein the precursor layer comprises A iN. Original
A method as in claim [[1]] 17 wherein forming the GaN comprises performing an epitaxial growth technique. Currently amended
A method as in claim 7 wherein the epitaxial growth technique comprises Liquid Phase Epitaxy (LPE). Original
A method as in claim 7 wherein the epitaxial growth technique comprises Hydride Vapor Phase Epitaxy (H V PE). Original
10-12. Canceled
Canceled
A method as in claim [[12]] 17 wherein the silicon carbide comprises 4H single crystal silicon carbide. Currently amended
A method as in claim [[12]] 17 wherein the silicon carbide comprises 6 H single crystal silicon carbide. Currently amended
A method as in claim [[12]] 17 wherein the silicon carbide comprises 3C single crystal silicon carbide. Currently amended
A method as in claim [[12]] 17 wherein the first cleave process comprises a post-implant, prebonding annealing. Currently amended
A method comprising: providing a substrate bearing a bonding layer; transferring a la y er of additional material comprising silicon carbide to the bonding la yer utilizing a first cleave process, the transferring performed within a bonded thermal budget; forming G aN over the layer of additional material, performing a thermal treatment of an implanted donor of the additional material prior to the bonding, in order to reduce a thermal budget of the first cleave process, wherein the thermal treatment is performed at a first temperature about 25-50 0 C lower than a second temperature required to develop blistering; and performing a second cleave process to transfer a layer from the G aN for incorporation into an opto-electronic device, wherein the thermal treatment allows the second cleave process to also be performed within the bonded thermal budget. Currently amended
A method as in claim 17 wherein the thermal treatment comprises an annealing. Original
A method as in claim 17 wherein the thermal treatment comprises laser exposure. Original
20-21. Canceled
Canceled
A method as in claim [[1]] 17 wherein the additional material is separated by the cleave process from a bulk material having a width of 2" or greater. Currently amended
A method as in claim [[1]] 17 wherein the substrate comprises polycrystalline A lN. Currently amended
A method as in claim [[1]] 17 wherein the substrate comprises Mullite. Currently amended
A method as in claim [[1]] 17 wherein the substrate comprises molybdenum. Currently amended
A method as in claim [[1]] 17 wherein the substrate comprises tungsten. Currently amended
Canceled
A method as in claim [[27]] 17 wherein the second cleave process comprises implanting particles into the GaN material. Currently amended
A method as in claim [[27]] 1 7 wherein the
A method as in claim [[27]] 17 wherein the Currently amended layer is free- standing. Currently amended layer is transferred to a supporting substrate.
Layer stacks claimed or described, ordered top of device to substrate.
opto-electronic device (HB-LED)
Materials described outside the worked examples.
GaN
AlN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN seed layer thickness | 100–5000 | GaN |
additional GaN epitaxial layer thickness | 0.01–10 |
Related documents with shared materials, methods, properties, or citations.
silicon carbide
SiC
Mullite
molybdenum
Mo
tungsten
W
dielectric layer (oxide)
Thickness | 0.05–1 µm | — |
Thickness | 10–70 µm | — |
Thickness | 200–250 nm | — |
Temperature | 150–250 °C | — |
Thickness | 200–500 um | — |
Thickness | 100–5000 nm | — |
Thickness | 0.01–10 cm | — |
Thickness | 0.5–2 um | — |
Thickness | 0.5–2 cm | — |
Thickness | 0.5–1 cm | — |
Thickness | 10–20 um | — |
Thickness | 0.05–2 um | — |
Thickness | 0.05–1 um | — |
Duration | 2–3 hours | — |
— | 5–30 W | — |
Thickness | 400–500 nm | — |
Thickness | 20–50 um | — |
Thickness | 100–200 µm | — |
Thickness | 200–400 nm | — |
Thickness | 100–200 nm | — |
Temperature | 600–900 °C | — |
Temperature | 800–900 °C | — |
Temperature | 25–50 °C | — |
Thickness | 50–200 nm | — |
Thickness | 20–80 nm | — |
Thickness | 75–200 nm | — |
Duration | 1–10 minutes | — |
Duration | 30–60 minutes | — |
Pressure | 0.5–1 MPa | — |
Thickness | 0.2–10 cm | — |
Thickness | ≤ 60 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 20 nm | — |
LASER ANNEALING OF GAN LEDS WITH REDUCED PATTERN EFFECTS
silicon carbide
SiC
Mullite
molybdenum
Mo
tungsten
W
dielectric layer (oxide)
Thickness | 0.05–1 µm | — |
Thickness | 10–70 µm | — |
Thickness | 200–250 nm | — |
Temperature | 150–250 °C | — |
Thickness | 200–500 um | — |
Thickness | 100–5000 nm | — |
Thickness | 0.01–10 cm | — |
Thickness | 0.5–2 um | — |
Thickness | 0.5–2 cm | — |
Thickness | 0.5–1 cm | — |
Thickness | 10–20 um | — |
Thickness | 0.05–2 um | — |
Thickness | 0.05–1 um | — |
Duration | 2–3 hours | — |
— | 5–30 W | — |
Thickness | 400–500 nm | — |
Thickness | 20–50 um | — |
Thickness | 100–200 µm | — |
Thickness | 200–400 nm | — |
Thickness | 100–200 nm | — |
Temperature | 600–900 °C | — |
Temperature | 800–900 °C | — |
Temperature | 25–50 °C | — |
Thickness | 50–200 nm | — |
Thickness | 20–80 nm | — |
Thickness | 75–200 nm | — |
Duration | 1–10 minutes | — |
Duration | 30–60 minutes | — |
Pressure | 0.5–1 MPa | — |
Thickness | 0.2–10 cm | — |
Thickness | ≤ 60 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 20 nm | — |
LASER ANNEALING OF GAN LEDS WITH REDUCED PATTERN EFFECTS
silicon carbide
SiC
Mullite
molybdenum
Mo
tungsten
W
dielectric layer (oxide)
Thickness | 0.05–1 µm | — |
Thickness | 10–70 µm | — |
Thickness | 200–250 nm | — |
Temperature | 150–250 °C | — |
Thickness | 200–500 um | — |
Thickness | 100–5000 nm | — |
Thickness | 0.01–10 cm | — |
Thickness | 0.5–2 um | — |
Thickness | 0.5–2 cm | — |
Thickness | 0.5–1 cm | — |
Thickness | 10–20 um | — |
Thickness | 0.05–2 um | — |
Thickness | 0.05–1 um | — |
Duration | 2–3 hours | — |
— | 5–30 W | — |
Thickness | 400–500 nm | — |
Thickness | 20–50 um | — |
Thickness | 100–200 µm | — |
Thickness | 200–400 nm | — |
Thickness | 100–200 nm | — |
Temperature | 600–900 °C | — |
Temperature | 800–900 °C | — |
Temperature | 25–50 °C | — |
Thickness | 50–200 nm | — |
Thickness | 20–80 nm | — |
Thickness | 75–200 nm | — |
Duration | 1–10 minutes | — |
Duration | 30–60 minutes | — |
Pressure | 0.5–1 MPa | — |
Thickness | 0.2–10 cm | — |
Thickness | ≤ 60 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 20 nm | — |
LASER ANNEALING OF GAN LEDS WITH REDUCED PATTERN EFFECTS
silicon carbide
SiC
Mullite
molybdenum
Mo
tungsten
W
dielectric layer (oxide)
Thickness | 0.05–1 µm | — |
Thickness | 10–70 µm | — |
Thickness | 200–250 nm | — |
Temperature | 150–250 °C | — |
Thickness | 200–500 um | — |
Thickness | 100–5000 nm | — |
Thickness | 0.01–10 cm | — |
Thickness | 0.5–2 um | — |
Thickness | 0.5–2 cm | — |
Thickness | 0.5–1 cm | — |
Thickness | 10–20 um | — |
Thickness | 0.05–2 um | — |
Thickness | 0.05–1 um | — |
Duration | 2–3 hours | — |
— | 5–30 W | — |
Thickness | 400–500 nm | — |
Thickness | 20–50 um | — |
Thickness | 100–200 µm | — |
Thickness | 200–400 nm | — |
Thickness | 100–200 nm | — |
Temperature | 600–900 °C | — |
Temperature | 800–900 °C | — |
Temperature | 25–50 °C | — |
Thickness | 50–200 nm | — |
Thickness | 20–80 nm | — |
Thickness | 75–200 nm | — |
Duration | 1–10 minutes | — |
Duration | 30–60 minutes | — |
Pressure | 0.5–1 MPa | — |
Thickness | 0.2–10 cm | — |
Thickness | ≤ 60 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 20 nm | — |