Patent
Atlas literature
Patent
US 11,637,197 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 8 are schematic views of showing a preparation process of an epitaxial structure of a GaN-based radio frequency device based on a Si substrate in an …
FIG. 2. Step 3: The first AlGaN buffer layer 3, the second AlGaN buffer layer 4, and the third AlGaN buffer layer 5 are 50 epitaxially grown in turn on the MN …
FIG. 3. Step 4: Repeat the following steps 4a) and 4b) a total of 3 times to epitaxially grow the GaN:Fe/GaN high-resistance layer 6 on the basis of the third …
FIG. 4.
FIG. 5.
FIG. 6. Step 7: The AlGaN barrier layer 9 is epitaxially grown on the GaN channel layer 8, wherein a molar content of an Al element in the AlGaN barrier layer …
FIG. 7. Step 8. The GaN cap layer 10 is epitaxially grown on the AlGaN barrier layer 9, wherein a thickness of the GaN cap layer 10 is 3 nm. The structure …
FIG. 8, which is the epitaxial structure of the GaN-based high- pressure HEMT device based on the Si substrate. After the electrode was prepared on the sample …
FIG. 9 is a flow rate variation curve of Cp₂Fe in GaN: Fe/GaN high-resistance layer in embodiment 1 of the pres- ent invention.
FIG. 10 is a pressure variation curve of the GaN super- lattice layer in embodiment 1 of the present invention.
FIG. 11 is a V/III ratio variation curve of the GaN superlattice layer in embodiment 1 of the present invention.
FIG. 12 is current leakage curves of source and drain electrodes of the epitaxial structures of the present invention and of the prior art. The figures show the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An epitaxial structure of a GaN-based radio frequency device based on a Si substrate, wherein the epitaxial struc-ture of the GaN-based radio frequency device is composed of a Si substrate, an AlN nucleation layer, an AlGaN buffer layer, a GaN: Fe/GaN high-resistance layer, a GaN superlattice layer, a GaN channel layer, an AlGaN barrier layer and a GaN cap layer which are stacked in turn from bottom to top; wherein the GaN: Fe/GaN high-resistance layer is composed of an intentional Fe-doped GaN layer and an unintentional doped GaN layer which are alternately con-nected; each of the intentional Fe-doped GaN layer and the unintentional doped GaN layer has a thickness of 100 nm to 200 nm; the GaN superlattice layer is composed of a low-pressure/low V/III ratio GaN layer and a high-pressure/high V/III ratio GaN layer which are periodically and alternately connected, and each of the low-pressure/low V/III ratio GaN layer and the high-pressure/high V/III ratio GaN layer has a thickness of 20 nm to 50 nm.
The epitaxial structure of the GaN-based radio fre-quency device based on the Si substrate according to claim 1, wherein a repetition period of the low-pressure/low V/III ratio GaN layer and the high-pressure/high VIII ratio GaN layer is 3-5 cycles.
The epitaxial structure of the GaN-based radio fre-quency device based on the Si substrate according to claim 1, wherein a repetition period of the intentional Fe-doped GaN layer and the unintentional doped GaN layer is 3 to cycles, and a doping concentration of Fe impurities in the intentional Fe-doped GaN layer is 1E₁₉ cm⁻³-1E₂₀ cm⁻³.
The epitaxial structure of the GaN-based radio fre-quency device based on the Si substrate according to claim 1, wherein the AlGaN buffer layer has a total of three layers, wherein a molar content percentage of an Al element of each of the three layers from bottom to top decreases in turn, and is in the range of 20% to 70%; a thickness of each of the three layers increases in turn, and is in the range of 200 nm to 800 nm.
The epitaxial structure of the GaN-based radio fre-quency device based on the Si substrate according to claim 1, wherein the Si substrate has a circular shape and a diameter of 6 inches to 10 inches.
The epitaxial structure of the GaN-based radio fre-quency device based on the Si substrate according to claim 1, wherein a thickness of the Si substrate, a thickness of the AlN nucleation layer, a thickness of the AlGaN buffer layer, a thickness of the GaN channel layer, a thickness of the AlGaN barrier layer and a thickness of the GaN cap layer are respectively 0.5 mm to 2 mm, 0.2 µm to 1 µm, 600 nm to 2400 nm, 100 nm to 500 nm, 10 nm to 30 nm and 2 nm to 5 nm.
A method of manufacturing the epitaxial structure of the GaN-based radio frequency device based on the Si substrate according to claim 1, comprising the steps of: 1) putting the Si substrate into a metal organic chemical vapor deposition equipment, and annealing a surface of the Si substrate in a reaction chamber; 2) epitaxially growing the AlN nucleation layer on the substrate; 3) epitaxially growing the AlGaN buffer layers on the basis of the AlN nucleation layer, wherein the AlGaN buffer layers have a total of three layers, wherein a molar content percentage of an Al element of each of the three layers from bottom to top decreases in turn, and is in the range of 20% to 70%; a thickness of each of the three layers increases in turn, and is in the range of 200 nm to 800 nm; 4) repeating the following steps 4a) and 4b) multiple times to epitaxially growing the GaN: Fe/GaN high-resistance layer on the basis of the AlGaN buffer layers; 4a) using Cp₂Fe as a Fe doping source to grow the intentional Fe-doped GaN layer, a doping concentra-tion of Fe impurities in the intentional Fe-doped GaN layer is 1E₁₉ cm⁻³-1E₂₀ cm⁻³, and a thickness of the intentional Fe-doped GaN layer is 100 nm to 200 nm; 4b) growing the unintentional doped GaN layer on the intentional Fe-doped GaN layer, without introducing Cp₂Fe, wherein a thickness of the unintentional doped GaN layer is 100 nm to 200 nm; B₂ 5) repeating the following steps 5a) and 5b) multiple times, and epitaxially growing the GaN superlattice layer on the GaN: Fe/GaN high-resistance layer; 5a) growing the low-pressure/low V/III ratio GaN layer under low-pressure and low VIII ratio growth condi-tions, wherein a growth pressure is 50 Torr to 100 Torr, a V/III ratio is lesser than 50, and a thickness of the low-pressure/low V/III ratio GaN layer is 20 nm to 50 nm; 5b) growing a high-pressure/high V/III ratio GaN layer under high-pressure and high VIII ratio growth condi-tions, wherein a growth pressure is 300 Torr to 400 Torr, a V/III ratio is greater than 110, and a thickness of the high-pressure/high V/III ratio GaN layer is 20 nm to 50 nm; 6) epitaxially growing the GaN channel layer; 7) epitaxially growing the AlGaN barrier layer; 8) epitaxially growing the GaN cap layer.
Embodiments described in the patent, grouped by the materials and process steps they use.
8 materials8 process steps
GaN-based HEMT epitaxial structure grown on an 8-inch Si substrate by MOCVD. Si substrate (1 mm thick, 8 inch diameter); AlN nucleation layer (0.5 µm); three AlGaN buffer layers with Al molar contents of 0.7, 0.5, 0.3 and thicknesses of 300 nm, 500 nm, 700 nm; GaN:Fe/GaN high-resistance layer (intentional Fe-doped GaN and unintentional doped GaN, each 100 nm thick, 3 cycles, Fe doping 1E₁₉ cm⁻³); GaN superlattice layer (low-pressure/low V/III GaN and high-pressure/high V/III GaN layers, each 25 nm thick, 5 cycles); GaN channel layer (300 nm); AlGaN barrier layer (20 nm); GaN cap layer (3 nm). MOCVD process includes Si substrate annealing at 1200°C for 15 min, AlN nucleation growth, sequential AlGaN buffer growth, alternating Fe-doped/undoped GaN high-resistance layer growth using Cp₂Fe dopant source, superlattice growth under alternating pressure/V/III conditions, then channel, barrier, and cap layer growth.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based HEMT (High Electron Mobility Transistor)/radio frequency device
Materials described outside the worked examples.
Cp₂Fe (bis(cyclopentadienyl)iron) Fe doping source
Fe(C₅H₅)2
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6. Step 7: The AlGaN barrier layer 9 is epitaxially grown on the GaN channel layer 8, wherein a molar content of an Al element in the AlGaN barrier layer …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | ≥ 510 V | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Cited non-patent literature · 1
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,637,197 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 8 are schematic views of showing a preparation process of an epitaxial structure of a GaN-based radio frequency device based on a Si substrate in an …
FIG. 2. Step 3: The first AlGaN buffer layer 3, the second AlGaN buffer layer 4, and the third AlGaN buffer layer 5 are 50 epitaxially grown in turn on the MN …
FIG. 3. Step 4: Repeat the following steps 4a) and 4b) a total of 3 times to epitaxially grow the GaN:Fe/GaN high-resistance layer 6 on the basis of the third …
FIG. 4.
FIG. 5.
FIG. 6. Step 7: The AlGaN barrier layer 9 is epitaxially grown on the GaN channel layer 8, wherein a molar content of an Al element in the AlGaN barrier layer …
FIG. 7. Step 8. The GaN cap layer 10 is epitaxially grown on the AlGaN barrier layer 9, wherein a thickness of the GaN cap layer 10 is 3 nm. The structure …
FIG. 8, which is the epitaxial structure of the GaN-based high- pressure HEMT device based on the Si substrate. After the electrode was prepared on the sample …
FIG. 9 is a flow rate variation curve of Cp₂Fe in GaN: Fe/GaN high-resistance layer in embodiment 1 of the pres- ent invention.
FIG. 10 is a pressure variation curve of the GaN super- lattice layer in embodiment 1 of the present invention.
FIG. 11 is a V/III ratio variation curve of the GaN superlattice layer in embodiment 1 of the present invention.
FIG. 12 is current leakage curves of source and drain electrodes of the epitaxial structures of the present invention and of the prior art. The figures show the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An epitaxial structure of a GaN-based radio frequency device based on a Si substrate, wherein the epitaxial struc-ture of the GaN-based radio frequency device is composed of a Si substrate, an AlN nucleation layer, an AlGaN buffer layer, a GaN: Fe/GaN high-resistance layer, a GaN superlattice layer, a GaN channel layer, an AlGaN barrier layer and a GaN cap layer which are stacked in turn from bottom to top; wherein the GaN: Fe/GaN high-resistance layer is composed of an intentional Fe-doped GaN layer and an unintentional doped GaN layer which are alternately con-nected; each of the intentional Fe-doped GaN layer and the unintentional doped GaN layer has a thickness of 100 nm to 200 nm; the GaN superlattice layer is composed of a low-pressure/low V/III ratio GaN layer and a high-pressure/high V/III ratio GaN layer which are periodically and alternately connected, and each of the low-pressure/low V/III ratio GaN layer and the high-pressure/high V/III ratio GaN layer has a thickness of 20 nm to 50 nm.
The epitaxial structure of the GaN-based radio fre-quency device based on the Si substrate according to claim 1, wherein a repetition period of the low-pressure/low V/III ratio GaN layer and the high-pressure/high VIII ratio GaN layer is 3-5 cycles.
The epitaxial structure of the GaN-based radio fre-quency device based on the Si substrate according to claim 1, wherein a repetition period of the intentional Fe-doped GaN layer and the unintentional doped GaN layer is 3 to cycles, and a doping concentration of Fe impurities in the intentional Fe-doped GaN layer is 1E₁₉ cm⁻³-1E₂₀ cm⁻³.
The epitaxial structure of the GaN-based radio fre-quency device based on the Si substrate according to claim 1, wherein the AlGaN buffer layer has a total of three layers, wherein a molar content percentage of an Al element of each of the three layers from bottom to top decreases in turn, and is in the range of 20% to 70%; a thickness of each of the three layers increases in turn, and is in the range of 200 nm to 800 nm.
The epitaxial structure of the GaN-based radio fre-quency device based on the Si substrate according to claim 1, wherein the Si substrate has a circular shape and a diameter of 6 inches to 10 inches.
The epitaxial structure of the GaN-based radio fre-quency device based on the Si substrate according to claim 1, wherein a thickness of the Si substrate, a thickness of the AlN nucleation layer, a thickness of the AlGaN buffer layer, a thickness of the GaN channel layer, a thickness of the AlGaN barrier layer and a thickness of the GaN cap layer are respectively 0.5 mm to 2 mm, 0.2 µm to 1 µm, 600 nm to 2400 nm, 100 nm to 500 nm, 10 nm to 30 nm and 2 nm to 5 nm.
A method of manufacturing the epitaxial structure of the GaN-based radio frequency device based on the Si substrate according to claim 1, comprising the steps of: 1) putting the Si substrate into a metal organic chemical vapor deposition equipment, and annealing a surface of the Si substrate in a reaction chamber; 2) epitaxially growing the AlN nucleation layer on the substrate; 3) epitaxially growing the AlGaN buffer layers on the basis of the AlN nucleation layer, wherein the AlGaN buffer layers have a total of three layers, wherein a molar content percentage of an Al element of each of the three layers from bottom to top decreases in turn, and is in the range of 20% to 70%; a thickness of each of the three layers increases in turn, and is in the range of 200 nm to 800 nm; 4) repeating the following steps 4a) and 4b) multiple times to epitaxially growing the GaN: Fe/GaN high-resistance layer on the basis of the AlGaN buffer layers; 4a) using Cp₂Fe as a Fe doping source to grow the intentional Fe-doped GaN layer, a doping concentra-tion of Fe impurities in the intentional Fe-doped GaN layer is 1E₁₉ cm⁻³-1E₂₀ cm⁻³, and a thickness of the intentional Fe-doped GaN layer is 100 nm to 200 nm; 4b) growing the unintentional doped GaN layer on the intentional Fe-doped GaN layer, without introducing Cp₂Fe, wherein a thickness of the unintentional doped GaN layer is 100 nm to 200 nm; B₂ 5) repeating the following steps 5a) and 5b) multiple times, and epitaxially growing the GaN superlattice layer on the GaN: Fe/GaN high-resistance layer; 5a) growing the low-pressure/low V/III ratio GaN layer under low-pressure and low VIII ratio growth condi-tions, wherein a growth pressure is 50 Torr to 100 Torr, a V/III ratio is lesser than 50, and a thickness of the low-pressure/low V/III ratio GaN layer is 20 nm to 50 nm; 5b) growing a high-pressure/high V/III ratio GaN layer under high-pressure and high VIII ratio growth condi-tions, wherein a growth pressure is 300 Torr to 400 Torr, a V/III ratio is greater than 110, and a thickness of the high-pressure/high V/III ratio GaN layer is 20 nm to 50 nm; 6) epitaxially growing the GaN channel layer; 7) epitaxially growing the AlGaN barrier layer; 8) epitaxially growing the GaN cap layer.
Embodiments described in the patent, grouped by the materials and process steps they use.
8 materials8 process steps
GaN-based HEMT epitaxial structure grown on an 8-inch Si substrate by MOCVD. Si substrate (1 mm thick, 8 inch diameter); AlN nucleation layer (0.5 µm); three AlGaN buffer layers with Al molar contents of 0.7, 0.5, 0.3 and thicknesses of 300 nm, 500 nm, 700 nm; GaN:Fe/GaN high-resistance layer (intentional Fe-doped GaN and unintentional doped GaN, each 100 nm thick, 3 cycles, Fe doping 1E₁₉ cm⁻³); GaN superlattice layer (low-pressure/low V/III GaN and high-pressure/high V/III GaN layers, each 25 nm thick, 5 cycles); GaN channel layer (300 nm); AlGaN barrier layer (20 nm); GaN cap layer (3 nm). MOCVD process includes Si substrate annealing at 1200°C for 15 min, AlN nucleation growth, sequential AlGaN buffer growth, alternating Fe-doped/undoped GaN high-resistance layer growth using Cp₂Fe dopant source, superlattice growth under alternating pressure/V/III conditions, then channel, barrier, and cap layer growth.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based HEMT (High Electron Mobility Transistor)/radio frequency device
Materials described outside the worked examples.
Cp₂Fe (bis(cyclopentadienyl)iron) Fe doping source
Fe(C₅H₅)2
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6. Step 7: The AlGaN barrier layer 9 is epitaxially grown on the GaN channel layer 8, wherein a molar content of an Al element in the AlGaN barrier layer …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | ≥ 510 V | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Cited non-patent literature · 1
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,637,197 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 8 are schematic views of showing a preparation process of an epitaxial structure of a GaN-based radio frequency device based on a Si substrate in an …
FIG. 2. Step 3: The first AlGaN buffer layer 3, the second AlGaN buffer layer 4, and the third AlGaN buffer layer 5 are 50 epitaxially grown in turn on the MN …
FIG. 3. Step 4: Repeat the following steps 4a) and 4b) a total of 3 times to epitaxially grow the GaN:Fe/GaN high-resistance layer 6 on the basis of the third …
FIG. 4.
FIG. 5.
FIG. 6. Step 7: The AlGaN barrier layer 9 is epitaxially grown on the GaN channel layer 8, wherein a molar content of an Al element in the AlGaN barrier layer …
FIG. 7. Step 8. The GaN cap layer 10 is epitaxially grown on the AlGaN barrier layer 9, wherein a thickness of the GaN cap layer 10 is 3 nm. The structure …
FIG. 8, which is the epitaxial structure of the GaN-based high- pressure HEMT device based on the Si substrate. After the electrode was prepared on the sample …
FIG. 9 is a flow rate variation curve of Cp₂Fe in GaN: Fe/GaN high-resistance layer in embodiment 1 of the pres- ent invention.
FIG. 10 is a pressure variation curve of the GaN super- lattice layer in embodiment 1 of the present invention.
FIG. 11 is a V/III ratio variation curve of the GaN superlattice layer in embodiment 1 of the present invention.
FIG. 12 is current leakage curves of source and drain electrodes of the epitaxial structures of the present invention and of the prior art. The figures show the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An epitaxial structure of a GaN-based radio frequency device based on a Si substrate, wherein the epitaxial struc-ture of the GaN-based radio frequency device is composed of a Si substrate, an AlN nucleation layer, an AlGaN buffer layer, a GaN: Fe/GaN high-resistance layer, a GaN superlattice layer, a GaN channel layer, an AlGaN barrier layer and a GaN cap layer which are stacked in turn from bottom to top; wherein the GaN: Fe/GaN high-resistance layer is composed of an intentional Fe-doped GaN layer and an unintentional doped GaN layer which are alternately con-nected; each of the intentional Fe-doped GaN layer and the unintentional doped GaN layer has a thickness of 100 nm to 200 nm; the GaN superlattice layer is composed of a low-pressure/low V/III ratio GaN layer and a high-pressure/high V/III ratio GaN layer which are periodically and alternately connected, and each of the low-pressure/low V/III ratio GaN layer and the high-pressure/high V/III ratio GaN layer has a thickness of 20 nm to 50 nm.
The epitaxial structure of the GaN-based radio fre-quency device based on the Si substrate according to claim 1, wherein a repetition period of the low-pressure/low V/III ratio GaN layer and the high-pressure/high VIII ratio GaN layer is 3-5 cycles.
The epitaxial structure of the GaN-based radio fre-quency device based on the Si substrate according to claim 1, wherein a repetition period of the intentional Fe-doped GaN layer and the unintentional doped GaN layer is 3 to cycles, and a doping concentration of Fe impurities in the intentional Fe-doped GaN layer is 1E₁₉ cm⁻³-1E₂₀ cm⁻³.
The epitaxial structure of the GaN-based radio fre-quency device based on the Si substrate according to claim 1, wherein the AlGaN buffer layer has a total of three layers, wherein a molar content percentage of an Al element of each of the three layers from bottom to top decreases in turn, and is in the range of 20% to 70%; a thickness of each of the three layers increases in turn, and is in the range of 200 nm to 800 nm.
The epitaxial structure of the GaN-based radio fre-quency device based on the Si substrate according to claim 1, wherein the Si substrate has a circular shape and a diameter of 6 inches to 10 inches.
The epitaxial structure of the GaN-based radio fre-quency device based on the Si substrate according to claim 1, wherein a thickness of the Si substrate, a thickness of the AlN nucleation layer, a thickness of the AlGaN buffer layer, a thickness of the GaN channel layer, a thickness of the AlGaN barrier layer and a thickness of the GaN cap layer are respectively 0.5 mm to 2 mm, 0.2 µm to 1 µm, 600 nm to 2400 nm, 100 nm to 500 nm, 10 nm to 30 nm and 2 nm to 5 nm.
A method of manufacturing the epitaxial structure of the GaN-based radio frequency device based on the Si substrate according to claim 1, comprising the steps of: 1) putting the Si substrate into a metal organic chemical vapor deposition equipment, and annealing a surface of the Si substrate in a reaction chamber; 2) epitaxially growing the AlN nucleation layer on the substrate; 3) epitaxially growing the AlGaN buffer layers on the basis of the AlN nucleation layer, wherein the AlGaN buffer layers have a total of three layers, wherein a molar content percentage of an Al element of each of the three layers from bottom to top decreases in turn, and is in the range of 20% to 70%; a thickness of each of the three layers increases in turn, and is in the range of 200 nm to 800 nm; 4) repeating the following steps 4a) and 4b) multiple times to epitaxially growing the GaN: Fe/GaN high-resistance layer on the basis of the AlGaN buffer layers; 4a) using Cp₂Fe as a Fe doping source to grow the intentional Fe-doped GaN layer, a doping concentra-tion of Fe impurities in the intentional Fe-doped GaN layer is 1E₁₉ cm⁻³-1E₂₀ cm⁻³, and a thickness of the intentional Fe-doped GaN layer is 100 nm to 200 nm; 4b) growing the unintentional doped GaN layer on the intentional Fe-doped GaN layer, without introducing Cp₂Fe, wherein a thickness of the unintentional doped GaN layer is 100 nm to 200 nm; B₂ 5) repeating the following steps 5a) and 5b) multiple times, and epitaxially growing the GaN superlattice layer on the GaN: Fe/GaN high-resistance layer; 5a) growing the low-pressure/low V/III ratio GaN layer under low-pressure and low VIII ratio growth condi-tions, wherein a growth pressure is 50 Torr to 100 Torr, a V/III ratio is lesser than 50, and a thickness of the low-pressure/low V/III ratio GaN layer is 20 nm to 50 nm; 5b) growing a high-pressure/high V/III ratio GaN layer under high-pressure and high VIII ratio growth condi-tions, wherein a growth pressure is 300 Torr to 400 Torr, a V/III ratio is greater than 110, and a thickness of the high-pressure/high V/III ratio GaN layer is 20 nm to 50 nm; 6) epitaxially growing the GaN channel layer; 7) epitaxially growing the AlGaN barrier layer; 8) epitaxially growing the GaN cap layer.
Embodiments described in the patent, grouped by the materials and process steps they use.
8 materials8 process steps
GaN-based HEMT epitaxial structure grown on an 8-inch Si substrate by MOCVD. Si substrate (1 mm thick, 8 inch diameter); AlN nucleation layer (0.5 µm); three AlGaN buffer layers with Al molar contents of 0.7, 0.5, 0.3 and thicknesses of 300 nm, 500 nm, 700 nm; GaN:Fe/GaN high-resistance layer (intentional Fe-doped GaN and unintentional doped GaN, each 100 nm thick, 3 cycles, Fe doping 1E₁₉ cm⁻³); GaN superlattice layer (low-pressure/low V/III GaN and high-pressure/high V/III GaN layers, each 25 nm thick, 5 cycles); GaN channel layer (300 nm); AlGaN barrier layer (20 nm); GaN cap layer (3 nm). MOCVD process includes Si substrate annealing at 1200°C for 15 min, AlN nucleation growth, sequential AlGaN buffer growth, alternating Fe-doped/undoped GaN high-resistance layer growth using Cp₂Fe dopant source, superlattice growth under alternating pressure/V/III conditions, then channel, barrier, and cap layer growth.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based HEMT (High Electron Mobility Transistor)/radio frequency device
Materials described outside the worked examples.
Cp₂Fe (bis(cyclopentadienyl)iron) Fe doping source
Fe(C₅H₅)2
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6. Step 7: The AlGaN barrier layer 9 is epitaxially grown on the GaN channel layer 8, wherein a molar content of an Al element in the AlGaN barrier layer …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | ≥ 510 V | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Cited non-patent literature · 1
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,637,197 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 8 are schematic views of showing a preparation process of an epitaxial structure of a GaN-based radio frequency device based on a Si substrate in an …
FIG. 2. Step 3: The first AlGaN buffer layer 3, the second AlGaN buffer layer 4, and the third AlGaN buffer layer 5 are 50 epitaxially grown in turn on the MN …
FIG. 3. Step 4: Repeat the following steps 4a) and 4b) a total of 3 times to epitaxially grow the GaN:Fe/GaN high-resistance layer 6 on the basis of the third …
FIG. 4.
FIG. 5.
FIG. 6. Step 7: The AlGaN barrier layer 9 is epitaxially grown on the GaN channel layer 8, wherein a molar content of an Al element in the AlGaN barrier layer …
FIG. 7. Step 8. The GaN cap layer 10 is epitaxially grown on the AlGaN barrier layer 9, wherein a thickness of the GaN cap layer 10 is 3 nm. The structure …
FIG. 8, which is the epitaxial structure of the GaN-based high- pressure HEMT device based on the Si substrate. After the electrode was prepared on the sample …
FIG. 9 is a flow rate variation curve of Cp₂Fe in GaN: Fe/GaN high-resistance layer in embodiment 1 of the pres- ent invention.
FIG. 10 is a pressure variation curve of the GaN super- lattice layer in embodiment 1 of the present invention.
FIG. 11 is a V/III ratio variation curve of the GaN superlattice layer in embodiment 1 of the present invention.
FIG. 12 is current leakage curves of source and drain electrodes of the epitaxial structures of the present invention and of the prior art. The figures show the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An epitaxial structure of a GaN-based radio frequency device based on a Si substrate, wherein the epitaxial struc-ture of the GaN-based radio frequency device is composed of a Si substrate, an AlN nucleation layer, an AlGaN buffer layer, a GaN: Fe/GaN high-resistance layer, a GaN superlattice layer, a GaN channel layer, an AlGaN barrier layer and a GaN cap layer which are stacked in turn from bottom to top; wherein the GaN: Fe/GaN high-resistance layer is composed of an intentional Fe-doped GaN layer and an unintentional doped GaN layer which are alternately con-nected; each of the intentional Fe-doped GaN layer and the unintentional doped GaN layer has a thickness of 100 nm to 200 nm; the GaN superlattice layer is composed of a low-pressure/low V/III ratio GaN layer and a high-pressure/high V/III ratio GaN layer which are periodically and alternately connected, and each of the low-pressure/low V/III ratio GaN layer and the high-pressure/high V/III ratio GaN layer has a thickness of 20 nm to 50 nm.
The epitaxial structure of the GaN-based radio fre-quency device based on the Si substrate according to claim 1, wherein a repetition period of the low-pressure/low V/III ratio GaN layer and the high-pressure/high VIII ratio GaN layer is 3-5 cycles.
The epitaxial structure of the GaN-based radio fre-quency device based on the Si substrate according to claim 1, wherein a repetition period of the intentional Fe-doped GaN layer and the unintentional doped GaN layer is 3 to cycles, and a doping concentration of Fe impurities in the intentional Fe-doped GaN layer is 1E₁₉ cm⁻³-1E₂₀ cm⁻³.
The epitaxial structure of the GaN-based radio fre-quency device based on the Si substrate according to claim 1, wherein the AlGaN buffer layer has a total of three layers, wherein a molar content percentage of an Al element of each of the three layers from bottom to top decreases in turn, and is in the range of 20% to 70%; a thickness of each of the three layers increases in turn, and is in the range of 200 nm to 800 nm.
The epitaxial structure of the GaN-based radio fre-quency device based on the Si substrate according to claim 1, wherein the Si substrate has a circular shape and a diameter of 6 inches to 10 inches.
The epitaxial structure of the GaN-based radio fre-quency device based on the Si substrate according to claim 1, wherein a thickness of the Si substrate, a thickness of the AlN nucleation layer, a thickness of the AlGaN buffer layer, a thickness of the GaN channel layer, a thickness of the AlGaN barrier layer and a thickness of the GaN cap layer are respectively 0.5 mm to 2 mm, 0.2 µm to 1 µm, 600 nm to 2400 nm, 100 nm to 500 nm, 10 nm to 30 nm and 2 nm to 5 nm.
A method of manufacturing the epitaxial structure of the GaN-based radio frequency device based on the Si substrate according to claim 1, comprising the steps of: 1) putting the Si substrate into a metal organic chemical vapor deposition equipment, and annealing a surface of the Si substrate in a reaction chamber; 2) epitaxially growing the AlN nucleation layer on the substrate; 3) epitaxially growing the AlGaN buffer layers on the basis of the AlN nucleation layer, wherein the AlGaN buffer layers have a total of three layers, wherein a molar content percentage of an Al element of each of the three layers from bottom to top decreases in turn, and is in the range of 20% to 70%; a thickness of each of the three layers increases in turn, and is in the range of 200 nm to 800 nm; 4) repeating the following steps 4a) and 4b) multiple times to epitaxially growing the GaN: Fe/GaN high-resistance layer on the basis of the AlGaN buffer layers; 4a) using Cp₂Fe as a Fe doping source to grow the intentional Fe-doped GaN layer, a doping concentra-tion of Fe impurities in the intentional Fe-doped GaN layer is 1E₁₉ cm⁻³-1E₂₀ cm⁻³, and a thickness of the intentional Fe-doped GaN layer is 100 nm to 200 nm; 4b) growing the unintentional doped GaN layer on the intentional Fe-doped GaN layer, without introducing Cp₂Fe, wherein a thickness of the unintentional doped GaN layer is 100 nm to 200 nm; B₂ 5) repeating the following steps 5a) and 5b) multiple times, and epitaxially growing the GaN superlattice layer on the GaN: Fe/GaN high-resistance layer; 5a) growing the low-pressure/low V/III ratio GaN layer under low-pressure and low VIII ratio growth condi-tions, wherein a growth pressure is 50 Torr to 100 Torr, a V/III ratio is lesser than 50, and a thickness of the low-pressure/low V/III ratio GaN layer is 20 nm to 50 nm; 5b) growing a high-pressure/high V/III ratio GaN layer under high-pressure and high VIII ratio growth condi-tions, wherein a growth pressure is 300 Torr to 400 Torr, a V/III ratio is greater than 110, and a thickness of the high-pressure/high V/III ratio GaN layer is 20 nm to 50 nm; 6) epitaxially growing the GaN channel layer; 7) epitaxially growing the AlGaN barrier layer; 8) epitaxially growing the GaN cap layer.
Embodiments described in the patent, grouped by the materials and process steps they use.
8 materials8 process steps
GaN-based HEMT epitaxial structure grown on an 8-inch Si substrate by MOCVD. Si substrate (1 mm thick, 8 inch diameter); AlN nucleation layer (0.5 µm); three AlGaN buffer layers with Al molar contents of 0.7, 0.5, 0.3 and thicknesses of 300 nm, 500 nm, 700 nm; GaN:Fe/GaN high-resistance layer (intentional Fe-doped GaN and unintentional doped GaN, each 100 nm thick, 3 cycles, Fe doping 1E₁₉ cm⁻³); GaN superlattice layer (low-pressure/low V/III GaN and high-pressure/high V/III GaN layers, each 25 nm thick, 5 cycles); GaN channel layer (300 nm); AlGaN barrier layer (20 nm); GaN cap layer (3 nm). MOCVD process includes Si substrate annealing at 1200°C for 15 min, AlN nucleation growth, sequential AlGaN buffer growth, alternating Fe-doped/undoped GaN high-resistance layer growth using Cp₂Fe dopant source, superlattice growth under alternating pressure/V/III conditions, then channel, barrier, and cap layer growth.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based HEMT (High Electron Mobility Transistor)/radio frequency device
Materials described outside the worked examples.
Cp₂Fe (bis(cyclopentadienyl)iron) Fe doping source
Fe(C₅H₅)2
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6. Step 7: The AlGaN barrier layer 9 is epitaxially grown on the GaN channel layer 8, wherein a molar content of an Al element in the AlGaN barrier layer …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | ≥ 510 V | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Cited non-patent literature · 1
Related documents with shared materials, methods, properties, or citations.
FIG. 7. Step 8. The GaN cap layer 10 is epitaxially grown on the AlGaN barrier layer 9, wherein a thickness of the GaN cap layer 10 is 3 nm. The structure …
FIG. 8, which is the epitaxial structure of the GaN-based high- pressure HEMT device based on the Si substrate. After the electrode was prepared on the sample …
FIG. 8, which is the epitaxial structure of the GaN-based high- pressure HEMT device based on the Si substrate. After the electrode was prepared on the sample …
| 100–200 nm |
| — |
Thickness | 20–50 nm | — |
Thickness | 200–800 nm | — |
Thickness | 0.5–2 mm | — |
Thickness | 0.2–1 µm | — |
Thickness | 600–2400 nm | — |
Thickness | 100–500 nm | — |
Thickness | 10–30 nm | — |
Pressure | 50–100 Torr | — |
Pressure | 300–400 Torr | — |
Thickness | 5–800 nm | — |
Thickness | 2–5 nm | — |
Thickness | 30–800 nm | — |
FIG. 7. Step 8. The GaN cap layer 10 is epitaxially grown on the AlGaN barrier layer 9, wherein a thickness of the GaN cap layer 10 is 3 nm. The structure …
FIG. 8, which is the epitaxial structure of the GaN-based high- pressure HEMT device based on the Si substrate. After the electrode was prepared on the sample …
FIG. 8, which is the epitaxial structure of the GaN-based high- pressure HEMT device based on the Si substrate. After the electrode was prepared on the sample …
| 100–200 nm |
| — |
Thickness | 20–50 nm | — |
Thickness | 200–800 nm | — |
Thickness | 0.5–2 mm | — |
Thickness | 0.2–1 µm | — |
Thickness | 600–2400 nm | — |
Thickness | 100–500 nm | — |
Thickness | 10–30 nm | — |
Pressure | 50–100 Torr | — |
Pressure | 300–400 Torr | — |
Thickness | 5–800 nm | — |
Thickness | 2–5 nm | — |
Thickness | 30–800 nm | — |
FIG. 7. Step 8. The GaN cap layer 10 is epitaxially grown on the AlGaN barrier layer 9, wherein a thickness of the GaN cap layer 10 is 3 nm. The structure …
FIG. 8, which is the epitaxial structure of the GaN-based high- pressure HEMT device based on the Si substrate. After the electrode was prepared on the sample …
FIG. 8, which is the epitaxial structure of the GaN-based high- pressure HEMT device based on the Si substrate. After the electrode was prepared on the sample …
| 100–200 nm |
| — |
Thickness | 20–50 nm | — |
Thickness | 200–800 nm | — |
Thickness | 0.5–2 mm | — |
Thickness | 0.2–1 µm | — |
Thickness | 600–2400 nm | — |
Thickness | 100–500 nm | — |
Thickness | 10–30 nm | — |
Pressure | 50–100 Torr | — |
Pressure | 300–400 Torr | — |
Thickness | 5–800 nm | — |
Thickness | 2–5 nm | — |
Thickness | 30–800 nm | — |
FIG. 7. Step 8. The GaN cap layer 10 is epitaxially grown on the AlGaN barrier layer 9, wherein a thickness of the GaN cap layer 10 is 3 nm. The structure …
FIG. 8, which is the epitaxial structure of the GaN-based high- pressure HEMT device based on the Si substrate. After the electrode was prepared on the sample …
FIG. 8, which is the epitaxial structure of the GaN-based high- pressure HEMT device based on the Si substrate. After the electrode was prepared on the sample …
| 100–200 nm |
| — |
Thickness | 20–50 nm | — |
Thickness | 200–800 nm | — |
Thickness | 0.5–2 mm | — |
Thickness | 0.2–1 µm | — |
Thickness | 600–2400 nm | — |
Thickness | 100–500 nm | — |
Thickness | 10–30 nm | — |
Pressure | 50–100 Torr | — |
Pressure | 300–400 Torr | — |
Thickness | 5–800 nm | — |
Thickness | 2–5 nm | — |
Thickness | 30–800 nm | — |
