Patent
US 8,916,906A BORON-CONTAINING BUFFER LAYER FOR GROWING GALLIUM NITRIDE ON SILICON
William E. Fenwick
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,916,906Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view showing the growth of a single crystal GaN layer on buffer layers of BA l N and AlGaN over a silicon substrate. [0019]
FIG. 2B is a diagram of silicon atoms along a Si(111) 1x1 surface of a silicon crystal. [0021]
FIG. 3 shows a model of the crystal structure of wurtzite aluminum nitride. [0022]
FIG. 4 is a diagram of the crystal structure of the aluminum hexagons in the C-plane of AlN superimposed over the crystal structure of silicon along the …
FIG. 5 is a diagram of the top or bottom hexagonal structure of the aluminum nitride crystal of
FIG. 6 illustrates the geometry used to calculate the cell unit length of the aluminum nitride crystal of
FIG. 7 illustrates the geometry used to calculate the cell unit length of a crystal in which a boron atom replaces every third aluminum atom in the C-plane of …
FIG. 8 is a diagram of the C-plane of BA l N in which every third atom of aluminum of AlN has been replaced by a boron atom. [0027]
FIG. 9 is a diagram of the crystal structure of hexagons of aluminum and boron in the C- plane of BA lN superimposed over the crystal structure of silicon …
FIG. 10 is a diagram of the crystal structures of a silicon substrate and a BA l N nucleation layer viewed perpendicular to the Si(111) surface. [0029]
FIG. 11 shows a model of the crystal structure of wurtzite boron aluminum nitride in which a boron atom replaces every third aluminum atom in the C-plane of …
FIG. 12 is a flowchart of a method for growing an initial nucleation layer of BA l N on a silicon substrate. [0031]
FIG. 13 is a graph of gas flows of hydrogen, trimethylaluminum, triethylboron and ammonia through a reaction chamber during the method of
FIG. 14 is a cross-sectional view showing the growth of a single crystal GaN layer on buffer layers of AlN and BAlGaN over a silicon substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: a substrate of silicon, wherein the substrate has a Si(1 11)lxl surface; a buffer layer of boron-aluminum nitride overlying the Si(111) 1xl surface of the substrate, wherein the boron-aluminum nitride has a composition of B xAlx N wherein 0.35<x <0.45, and wherein the boron-aluminum nitride has a wurtzite-type crystal structure with a cell unit length in a C-plane that is between 64% and 68% of a cell unit length of the silicon on the Si(111) lxl surface; and an upper layer of gallium nitride above the buffer layer. previously presented
The device of claim 1, wherein the boron-aluminum nitride has the wurtzite-type crystal structure with at least one layer in the C-plane having one atom of boron for each two atoms of aluminum. previously presented
The device of claim 1, wherein the silicon and boron-aluminum nitride are oriented as boron-aluminum nitride<0001> II Si<111>.
The device of claim 1, wherein no amount of metallic aluminum is disposed between the substrate and the buffer layer.
The device of claim 1, further comprising: a second buffer layer comprising aluminum gallium nitride (AlyGa i yN), wherein the second buffer layer of aluminum 2 \\DC-081912/000065-6132841 v 1 U.S. Application No. 13/194,744 In response to Final Office Action dated gallium nitride is disposed between the buffer layer of boron-aluminum nitride and the upper layer of gallium nitride.
The device of claim 1, wherein the buffer layer of boron- aluminum nitride is between 100 and 150 nanometers thick.
The device of claim 1, wherein the substrate is an 8 inch diameter silicon wafer cut along a Si(111) plane, and wherein the entire wafer is formed so that nitrogen atoms of the boron-aluminum nitride form bonds to the Si(1 11)lxl surface. 10-31.
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Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-silicon LED wafer structure
GaN-on-silicon LED wafer structure with AlGaN second buffer
Materials described outside the worked examples.
silicon substrate Si(111)
Si
boron-aluminum nitride buffer layer
BxAl(1-x)N
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 13 is a graph of gas flows of hydrogen, trimethylaluminum, triethylboron and ammonia through a reaction chamber during the method of
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
BAlN buffer layer thickness range | 100–150 | BxAl(1-x)N |
BAlN boron fraction x in BxAl(1-x)N | 0.35–0.45 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,916,906Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view showing the growth of a single crystal GaN layer on buffer layers of BA l N and AlGaN over a silicon substrate. [0019]
FIG. 2B is a diagram of silicon atoms along a Si(111) 1x1 surface of a silicon crystal. [0021]
FIG. 3 shows a model of the crystal structure of wurtzite aluminum nitride. [0022]
FIG. 4 is a diagram of the crystal structure of the aluminum hexagons in the C-plane of AlN superimposed over the crystal structure of silicon along the …
FIG. 5 is a diagram of the top or bottom hexagonal structure of the aluminum nitride crystal of
FIG. 6 illustrates the geometry used to calculate the cell unit length of the aluminum nitride crystal of
FIG. 7 illustrates the geometry used to calculate the cell unit length of a crystal in which a boron atom replaces every third aluminum atom in the C-plane of …
FIG. 8 is a diagram of the C-plane of BA l N in which every third atom of aluminum of AlN has been replaced by a boron atom. [0027]
FIG. 9 is a diagram of the crystal structure of hexagons of aluminum and boron in the C- plane of BA lN superimposed over the crystal structure of silicon …
FIG. 10 is a diagram of the crystal structures of a silicon substrate and a BA l N nucleation layer viewed perpendicular to the Si(111) surface. [0029]
FIG. 11 shows a model of the crystal structure of wurtzite boron aluminum nitride in which a boron atom replaces every third aluminum atom in the C-plane of …
FIG. 12 is a flowchart of a method for growing an initial nucleation layer of BA l N on a silicon substrate. [0031]
FIG. 13 is a graph of gas flows of hydrogen, trimethylaluminum, triethylboron and ammonia through a reaction chamber during the method of
FIG. 14 is a cross-sectional view showing the growth of a single crystal GaN layer on buffer layers of AlN and BAlGaN over a silicon substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: a substrate of silicon, wherein the substrate has a Si(1 11)lxl surface; a buffer layer of boron-aluminum nitride overlying the Si(111) 1xl surface of the substrate, wherein the boron-aluminum nitride has a composition of B xAlx N wherein 0.35<x <0.45, and wherein the boron-aluminum nitride has a wurtzite-type crystal structure with a cell unit length in a C-plane that is between 64% and 68% of a cell unit length of the silicon on the Si(111) lxl surface; and an upper layer of gallium nitride above the buffer layer. previously presented
The device of claim 1, wherein the boron-aluminum nitride has the wurtzite-type crystal structure with at least one layer in the C-plane having one atom of boron for each two atoms of aluminum. previously presented
The device of claim 1, wherein the silicon and boron-aluminum nitride are oriented as boron-aluminum nitride<0001> II Si<111>.
The device of claim 1, wherein no amount of metallic aluminum is disposed between the substrate and the buffer layer.
The device of claim 1, further comprising: a second buffer layer comprising aluminum gallium nitride (AlyGa i yN), wherein the second buffer layer of aluminum 2 \\DC-081912/000065-6132841 v 1 U.S. Application No. 13/194,744 In response to Final Office Action dated gallium nitride is disposed between the buffer layer of boron-aluminum nitride and the upper layer of gallium nitride.
The device of claim 1, wherein the buffer layer of boron- aluminum nitride is between 100 and 150 nanometers thick.
The device of claim 1, wherein the substrate is an 8 inch diameter silicon wafer cut along a Si(111) plane, and wherein the entire wafer is formed so that nitrogen atoms of the boron-aluminum nitride form bonds to the Si(1 11)lxl surface. 10-31.
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Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-silicon LED wafer structure
GaN-on-silicon LED wafer structure with AlGaN second buffer
Materials described outside the worked examples.
silicon substrate Si(111)
Si
boron-aluminum nitride buffer layer
BxAl(1-x)N
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 13 is a graph of gas flows of hydrogen, trimethylaluminum, triethylboron and ammonia through a reaction chamber during the method of
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
BAlN buffer layer thickness range | 100–150 | BxAl(1-x)N |
BAlN boron fraction x in BxAl(1-x)N | 0.35–0.45 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,916,906Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view showing the growth of a single crystal GaN layer on buffer layers of BA l N and AlGaN over a silicon substrate. [0019]
FIG. 2B is a diagram of silicon atoms along a Si(111) 1x1 surface of a silicon crystal. [0021]
FIG. 3 shows a model of the crystal structure of wurtzite aluminum nitride. [0022]
FIG. 4 is a diagram of the crystal structure of the aluminum hexagons in the C-plane of AlN superimposed over the crystal structure of silicon along the …
FIG. 5 is a diagram of the top or bottom hexagonal structure of the aluminum nitride crystal of
FIG. 6 illustrates the geometry used to calculate the cell unit length of the aluminum nitride crystal of
FIG. 7 illustrates the geometry used to calculate the cell unit length of a crystal in which a boron atom replaces every third aluminum atom in the C-plane of …
FIG. 8 is a diagram of the C-plane of BA l N in which every third atom of aluminum of AlN has been replaced by a boron atom. [0027]
FIG. 9 is a diagram of the crystal structure of hexagons of aluminum and boron in the C- plane of BA lN superimposed over the crystal structure of silicon …
FIG. 10 is a diagram of the crystal structures of a silicon substrate and a BA l N nucleation layer viewed perpendicular to the Si(111) surface. [0029]
FIG. 11 shows a model of the crystal structure of wurtzite boron aluminum nitride in which a boron atom replaces every third aluminum atom in the C-plane of …
FIG. 12 is a flowchart of a method for growing an initial nucleation layer of BA l N on a silicon substrate. [0031]
FIG. 13 is a graph of gas flows of hydrogen, trimethylaluminum, triethylboron and ammonia through a reaction chamber during the method of
FIG. 14 is a cross-sectional view showing the growth of a single crystal GaN layer on buffer layers of AlN and BAlGaN over a silicon substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: a substrate of silicon, wherein the substrate has a Si(1 11)lxl surface; a buffer layer of boron-aluminum nitride overlying the Si(111) 1xl surface of the substrate, wherein the boron-aluminum nitride has a composition of B xAlx N wherein 0.35<x <0.45, and wherein the boron-aluminum nitride has a wurtzite-type crystal structure with a cell unit length in a C-plane that is between 64% and 68% of a cell unit length of the silicon on the Si(111) lxl surface; and an upper layer of gallium nitride above the buffer layer. previously presented
The device of claim 1, wherein the boron-aluminum nitride has the wurtzite-type crystal structure with at least one layer in the C-plane having one atom of boron for each two atoms of aluminum. previously presented
The device of claim 1, wherein the silicon and boron-aluminum nitride are oriented as boron-aluminum nitride<0001> II Si<111>.
The device of claim 1, wherein no amount of metallic aluminum is disposed between the substrate and the buffer layer.
The device of claim 1, further comprising: a second buffer layer comprising aluminum gallium nitride (AlyGa i yN), wherein the second buffer layer of aluminum 2 \\DC-081912/000065-6132841 v 1 U.S. Application No. 13/194,744 In response to Final Office Action dated gallium nitride is disposed between the buffer layer of boron-aluminum nitride and the upper layer of gallium nitride.
The device of claim 1, wherein the buffer layer of boron- aluminum nitride is between 100 and 150 nanometers thick.
The device of claim 1, wherein the substrate is an 8 inch diameter silicon wafer cut along a Si(111) plane, and wherein the entire wafer is formed so that nitrogen atoms of the boron-aluminum nitride form bonds to the Si(1 11)lxl surface. 10-31.
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Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-silicon LED wafer structure
GaN-on-silicon LED wafer structure with AlGaN second buffer
Materials described outside the worked examples.
silicon substrate Si(111)
Si
boron-aluminum nitride buffer layer
BxAl(1-x)N
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 13 is a graph of gas flows of hydrogen, trimethylaluminum, triethylboron and ammonia through a reaction chamber during the method of
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
BAlN buffer layer thickness range | 100–150 | BxAl(1-x)N |
BAlN boron fraction x in BxAl(1-x)N | 0.35–0.45 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,916,906Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view showing the growth of a single crystal GaN layer on buffer layers of BA l N and AlGaN over a silicon substrate. [0019]
FIG. 2B is a diagram of silicon atoms along a Si(111) 1x1 surface of a silicon crystal. [0021]
FIG. 3 shows a model of the crystal structure of wurtzite aluminum nitride. [0022]
FIG. 4 is a diagram of the crystal structure of the aluminum hexagons in the C-plane of AlN superimposed over the crystal structure of silicon along the …
FIG. 5 is a diagram of the top or bottom hexagonal structure of the aluminum nitride crystal of
FIG. 6 illustrates the geometry used to calculate the cell unit length of the aluminum nitride crystal of
FIG. 7 illustrates the geometry used to calculate the cell unit length of a crystal in which a boron atom replaces every third aluminum atom in the C-plane of …
FIG. 8 is a diagram of the C-plane of BA l N in which every third atom of aluminum of AlN has been replaced by a boron atom. [0027]
FIG. 9 is a diagram of the crystal structure of hexagons of aluminum and boron in the C- plane of BA lN superimposed over the crystal structure of silicon …
FIG. 10 is a diagram of the crystal structures of a silicon substrate and a BA l N nucleation layer viewed perpendicular to the Si(111) surface. [0029]
FIG. 11 shows a model of the crystal structure of wurtzite boron aluminum nitride in which a boron atom replaces every third aluminum atom in the C-plane of …
FIG. 12 is a flowchart of a method for growing an initial nucleation layer of BA l N on a silicon substrate. [0031]
FIG. 13 is a graph of gas flows of hydrogen, trimethylaluminum, triethylboron and ammonia through a reaction chamber during the method of
FIG. 14 is a cross-sectional view showing the growth of a single crystal GaN layer on buffer layers of AlN and BAlGaN over a silicon substrate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: a substrate of silicon, wherein the substrate has a Si(1 11)lxl surface; a buffer layer of boron-aluminum nitride overlying the Si(111) 1xl surface of the substrate, wherein the boron-aluminum nitride has a composition of B xAlx N wherein 0.35<x <0.45, and wherein the boron-aluminum nitride has a wurtzite-type crystal structure with a cell unit length in a C-plane that is between 64% and 68% of a cell unit length of the silicon on the Si(111) lxl surface; and an upper layer of gallium nitride above the buffer layer. previously presented
The device of claim 1, wherein the boron-aluminum nitride has the wurtzite-type crystal structure with at least one layer in the C-plane having one atom of boron for each two atoms of aluminum. previously presented
The device of claim 1, wherein the silicon and boron-aluminum nitride are oriented as boron-aluminum nitride<0001> II Si<111>.
The device of claim 1, wherein no amount of metallic aluminum is disposed between the substrate and the buffer layer.
The device of claim 1, further comprising: a second buffer layer comprising aluminum gallium nitride (AlyGa i yN), wherein the second buffer layer of aluminum 2 \\DC-081912/000065-6132841 v 1 U.S. Application No. 13/194,744 In response to Final Office Action dated gallium nitride is disposed between the buffer layer of boron-aluminum nitride and the upper layer of gallium nitride.
The device of claim 1, wherein the buffer layer of boron- aluminum nitride is between 100 and 150 nanometers thick.
The device of claim 1, wherein the substrate is an 8 inch diameter silicon wafer cut along a Si(111) plane, and wherein the entire wafer is formed so that nitrogen atoms of the boron-aluminum nitride form bonds to the Si(1 11)lxl surface. 10-31.
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Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-silicon LED wafer structure
GaN-on-silicon LED wafer structure with AlGaN second buffer
Materials described outside the worked examples.
silicon substrate Si(111)
Si
boron-aluminum nitride buffer layer
BxAl(1-x)N
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 13 is a graph of gas flows of hydrogen, trimethylaluminum, triethylboron and ammonia through a reaction chamber during the method of
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
BAlN buffer layer thickness range | 100–150 | BxAl(1-x)N |
BAlN boron fraction x in BxAl(1-x)N | 0.35–0.45 |
Related documents with shared materials, methods, properties, or citations.
gallium nitride upper layer
GaN
aluminum gallium nitride second buffer layer
AlyGa(1-y)N
trimethylaluminum
Al₂(CH₃)6
triethylboron
B₂(CH₂CH₃)6
ammonia
NH₃
BAlN C-plane cell unit length as fraction of Si(111) cell unit length | 0.64–0.68 | BxAl(1-x)N |
Thickness | 100–150 nm | — |
Thickness | 25–50 nm | — |
Thickness | 75–100 nm | — |
Thickness | ≥ 200 mm | — |
gallium nitride upper layer
GaN
aluminum gallium nitride second buffer layer
AlyGa(1-y)N
trimethylaluminum
Al₂(CH₃)6
triethylboron
B₂(CH₂CH₃)6
ammonia
NH₃
BAlN C-plane cell unit length as fraction of Si(111) cell unit length | 0.64–0.68 | BxAl(1-x)N |
Thickness | 100–150 nm | — |
Thickness | 25–50 nm | — |
Thickness | 75–100 nm | — |
Thickness | ≥ 200 mm | — |
gallium nitride upper layer
GaN
aluminum gallium nitride second buffer layer
AlyGa(1-y)N
trimethylaluminum
Al₂(CH₃)6
triethylboron
B₂(CH₂CH₃)6
ammonia
NH₃
BAlN C-plane cell unit length as fraction of Si(111) cell unit length | 0.64–0.68 | BxAl(1-x)N |
Thickness | 100–150 nm | — |
Thickness | 25–50 nm | — |
Thickness | 75–100 nm | — |
Thickness | ≥ 200 mm | — |
gallium nitride upper layer
GaN
aluminum gallium nitride second buffer layer
AlyGa(1-y)N
trimethylaluminum
Al₂(CH₃)6
triethylboron
B₂(CH₂CH₃)6
ammonia
NH₃
BAlN C-plane cell unit length as fraction of Si(111) cell unit length | 0.64–0.68 | BxAl(1-x)N |
Thickness | 100–150 nm | — |
Thickness | 25–50 nm | — |
Thickness | 75–100 nm | — |
Thickness | ≥ 200 mm | — |