Patent
US 12,062,738 B2BERYLLIUM DOPED GAN-BASED LIGHT EMITTING DIODE AND METHOD
James R. Shealy, Richard J. Brown
POWER INTEGRATIONS, INC., San Jose, CA (US)·Aug. 13, 2024·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 12,062,738 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified diagram of an LED device accord- ing to a conventional example;
FIG. 2 is a graph of wall plug efficiency vs. current for typical high power GaN-based LEDs;
FIG. 3 is a graph of the current vs. voltage for typical high power GaN-based LEDs plotted on a logarithmic current axis;
FIG. 4 is a graph showing the distribution of Beryllium atoms in an ion implanted GaN sample according to an 5 example of the present invention; and
FIGS. 5-9 are simplified diagrams illustrating a method of fabricating an LED device according to an example of the present invention.
FIG. 6 is formed as a Beryllium doped GaN contact layer 770. The implant damage has been removed and the Beryl- 30 lium acceptors are activated. The high …
FIG. 7 represents the LED layer structure in the first embodiment after the optimized annealing process is carried out. As shown in structure 700, the undoped …
FIG. 8 has a Magnesium doped confinement structure 850 of GaN, AlGaN, graded bandgap AlxGa₁-xN, InGaN or AGaInN layers with undoped GaN current spreading and …
FIG. 9 (structure 900). The objective in this embodiment is to preserve an already optimized 60 Magnesium doped confinement structure 850 (or an electron …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based light emitting diode (LED) device, com-prising: a substrate member, the substrate member being selected from at least one of a sapphire member, a SiC member, a GaN member, a AlN member, or a silicon member; a GaN buffer layer comprising a n-type doping material deposited on a surface region of the substrate member; an AlGaN confinement layer comprising an n-type doping material deposited directly overlying the GaN n-type buffer layer; an InGaN/GaN multi-quantum well (MQW) active region grown directly overlying the AlGaN confinement layer; an AlGaN layer to serve as an electron confinement layer; and optionally, an GaN layer to serve as a current spreading and ohmic contact layer grown directly overlying the undoped AlGaN confinement layer; wherein each of the AlGaN layer and the GaN layer comprises a plurality of beryllium impurities config-ured using ion implantation such that a region has been damaged by the ion implantation and configured to be activated by a high temperature annealing process that comprises an isothermal anneal on the region in a hydrogen and ammonia free ambient at temperatures in the range from 700 to 900 degrees Celsius for time period of greater than one second to facilitate removal of atomic hydrogen entities from the region such that a resulting beryllium doped material characterized by a low resistivity of less than 10 ohm-cm, p-type layers to 10-3 ohm-cm.
The device of claim 1 wherein the electron confinement layer is a layer selected from one of: a GaN Beryllium implanted p-type layer, a InGaN Beryllium implanted p-type layer, a AlInGaN Beryllium implanted p-type layer, a graded bandgap AlxGa₁-xN Beryllium implanted p-type layer, or a graded bandgap AlxInyGa₁-x-yN Beryllium implanted p-type layer.
The device of claim 1 wherein each of the electron confinement layer and the ohmic contact and current spread-ing layers comprises a magnesium doped confinement region, a current spreading region, and an ohmic contact layer provided prior to an ion implant and an annealing process.
The device of claim 1 wherein the current spreading layer is not optional.
The device of claim 1 wherein the MQW active region is optionally replaced with a doped or undoped GaN mate-rial.
The device of claim 1 wherein the MQW active region is optionally replaced with an doped or undoped AlGaN.
The device of claim 1 wherein the region is encapsu-lated using a nitrogen bearing material.
A GaN-based light emitting diode (LED) device, comprising: a substrate member, the substrate member being selected from at least one of a sapphire member, a SiC member, a GaN member, a AlN member, or a silicon member; a GaN buffer layer comprising a n-type doping material deposited on a surface region of the substrate member; an AlGaN confinement layer comprising an n-type doping material deposited directly overlying the GaN n-type buffer layer; an InGaN/GaN multi-quantum well (MQW) active region grown directly overlying the AlGaN confinement layer; an AlGaN layer to serve as an electron confinement layer; and optionally, an GaN layer to serve as a current spreading and ohmic contact layer grown directly overlying the AlGaN confinement layer; wherein each of the AlGaN layer and the GaN layer comprises a plurality of beryllium impurities config-ured using ion implantation such that a region has been damaged by the ion implantation and configured to be activated by a high temperature annealing process that comprises an isothermal anneal on the region in a hydrogen and ammonia free ambient at temperatures in the range from 700 to 900 degrees Celsius for time period of greater than one second to facilitate removal of atomic hydrogen entities from the region such that a resulting beryllium doped material characterized by a low resistivity of less than 10 ohm-cm, p-type layers to 10-3 ohm-cm.
The device of claim 11 wherein the electron confine-ment layer is a layer selected from one of: a GaN Beryllium implanted p-type layer, a InGaN Beryllium implanted p-type layer, a AlInGaN Beryllium implanted p-type layer, a graded bandgap AlxGa₁-xN Beryllium implanted p-type layer, or a graded bandgap AlxInyGa₁-x-yN Beryllium implanted p-type layer.
The device of claim 11 wherein each of the electron confinement layer and the ohmic contact and current spread-ing layers comprises a magnesium doped confinement region, a current spreading region, and an ohmic contact layer provided prior to an ion implant and an annealing process.
The device of claim 11 wherein the current spreading layer is not optional.
The device of claim 11 wherein the MQW active region is optionally replaced with a doped or undoped GaN material.
The device of claim 11 wherein the MQW active region is optionally replaced with an doped or undoped AlGaN.
The device of claim 11 wherein the region is encap-sulated using a nitrogen bearing material.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED with Be-implanted p-type layers (claim 1)
Materials described outside the worked examples.
GaN
AlGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph of wall plug efficiency vs. current for typical high power GaN-based LEDs;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
resistivity of Be-doped p-type GaN layer (claimed range) | 0.001–10 ohm-cm | AlGaN:Be |
typical resistivity of Mg-doped p-type GaN (background, prior art) | ≥ 1 ohm-cm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,062,738 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified diagram of an LED device accord- ing to a conventional example;
FIG. 2 is a graph of wall plug efficiency vs. current for typical high power GaN-based LEDs;
FIG. 3 is a graph of the current vs. voltage for typical high power GaN-based LEDs plotted on a logarithmic current axis;
FIG. 4 is a graph showing the distribution of Beryllium atoms in an ion implanted GaN sample according to an 5 example of the present invention; and
FIGS. 5-9 are simplified diagrams illustrating a method of fabricating an LED device according to an example of the present invention.
FIG. 6 is formed as a Beryllium doped GaN contact layer 770. The implant damage has been removed and the Beryl- 30 lium acceptors are activated. The high …
FIG. 7 represents the LED layer structure in the first embodiment after the optimized annealing process is carried out. As shown in structure 700, the undoped …
FIG. 8 has a Magnesium doped confinement structure 850 of GaN, AlGaN, graded bandgap AlxGa₁-xN, InGaN or AGaInN layers with undoped GaN current spreading and …
FIG. 9 (structure 900). The objective in this embodiment is to preserve an already optimized 60 Magnesium doped confinement structure 850 (or an electron …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based light emitting diode (LED) device, com-prising: a substrate member, the substrate member being selected from at least one of a sapphire member, a SiC member, a GaN member, a AlN member, or a silicon member; a GaN buffer layer comprising a n-type doping material deposited on a surface region of the substrate member; an AlGaN confinement layer comprising an n-type doping material deposited directly overlying the GaN n-type buffer layer; an InGaN/GaN multi-quantum well (MQW) active region grown directly overlying the AlGaN confinement layer; an AlGaN layer to serve as an electron confinement layer; and optionally, an GaN layer to serve as a current spreading and ohmic contact layer grown directly overlying the undoped AlGaN confinement layer; wherein each of the AlGaN layer and the GaN layer comprises a plurality of beryllium impurities config-ured using ion implantation such that a region has been damaged by the ion implantation and configured to be activated by a high temperature annealing process that comprises an isothermal anneal on the region in a hydrogen and ammonia free ambient at temperatures in the range from 700 to 900 degrees Celsius for time period of greater than one second to facilitate removal of atomic hydrogen entities from the region such that a resulting beryllium doped material characterized by a low resistivity of less than 10 ohm-cm, p-type layers to 10-3 ohm-cm.
The device of claim 1 wherein the electron confinement layer is a layer selected from one of: a GaN Beryllium implanted p-type layer, a InGaN Beryllium implanted p-type layer, a AlInGaN Beryllium implanted p-type layer, a graded bandgap AlxGa₁-xN Beryllium implanted p-type layer, or a graded bandgap AlxInyGa₁-x-yN Beryllium implanted p-type layer.
The device of claim 1 wherein each of the electron confinement layer and the ohmic contact and current spread-ing layers comprises a magnesium doped confinement region, a current spreading region, and an ohmic contact layer provided prior to an ion implant and an annealing process.
The device of claim 1 wherein the current spreading layer is not optional.
The device of claim 1 wherein the MQW active region is optionally replaced with a doped or undoped GaN mate-rial.
The device of claim 1 wherein the MQW active region is optionally replaced with an doped or undoped AlGaN.
The device of claim 1 wherein the region is encapsu-lated using a nitrogen bearing material.
A GaN-based light emitting diode (LED) device, comprising: a substrate member, the substrate member being selected from at least one of a sapphire member, a SiC member, a GaN member, a AlN member, or a silicon member; a GaN buffer layer comprising a n-type doping material deposited on a surface region of the substrate member; an AlGaN confinement layer comprising an n-type doping material deposited directly overlying the GaN n-type buffer layer; an InGaN/GaN multi-quantum well (MQW) active region grown directly overlying the AlGaN confinement layer; an AlGaN layer to serve as an electron confinement layer; and optionally, an GaN layer to serve as a current spreading and ohmic contact layer grown directly overlying the AlGaN confinement layer; wherein each of the AlGaN layer and the GaN layer comprises a plurality of beryllium impurities config-ured using ion implantation such that a region has been damaged by the ion implantation and configured to be activated by a high temperature annealing process that comprises an isothermal anneal on the region in a hydrogen and ammonia free ambient at temperatures in the range from 700 to 900 degrees Celsius for time period of greater than one second to facilitate removal of atomic hydrogen entities from the region such that a resulting beryllium doped material characterized by a low resistivity of less than 10 ohm-cm, p-type layers to 10-3 ohm-cm.
The device of claim 11 wherein the electron confine-ment layer is a layer selected from one of: a GaN Beryllium implanted p-type layer, a InGaN Beryllium implanted p-type layer, a AlInGaN Beryllium implanted p-type layer, a graded bandgap AlxGa₁-xN Beryllium implanted p-type layer, or a graded bandgap AlxInyGa₁-x-yN Beryllium implanted p-type layer.
The device of claim 11 wherein each of the electron confinement layer and the ohmic contact and current spread-ing layers comprises a magnesium doped confinement region, a current spreading region, and an ohmic contact layer provided prior to an ion implant and an annealing process.
The device of claim 11 wherein the current spreading layer is not optional.
The device of claim 11 wherein the MQW active region is optionally replaced with a doped or undoped GaN material.
The device of claim 11 wherein the MQW active region is optionally replaced with an doped or undoped AlGaN.
The device of claim 11 wherein the region is encap-sulated using a nitrogen bearing material.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED with Be-implanted p-type layers (claim 1)
Materials described outside the worked examples.
GaN
AlGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph of wall plug efficiency vs. current for typical high power GaN-based LEDs;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
resistivity of Be-doped p-type GaN layer (claimed range) | 0.001–10 ohm-cm | AlGaN:Be |
typical resistivity of Mg-doped p-type GaN (background, prior art) | ≥ 1 ohm-cm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,062,738 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified diagram of an LED device accord- ing to a conventional example;
FIG. 2 is a graph of wall plug efficiency vs. current for typical high power GaN-based LEDs;
FIG. 3 is a graph of the current vs. voltage for typical high power GaN-based LEDs plotted on a logarithmic current axis;
FIG. 4 is a graph showing the distribution of Beryllium atoms in an ion implanted GaN sample according to an 5 example of the present invention; and
FIGS. 5-9 are simplified diagrams illustrating a method of fabricating an LED device according to an example of the present invention.
FIG. 6 is formed as a Beryllium doped GaN contact layer 770. The implant damage has been removed and the Beryl- 30 lium acceptors are activated. The high …
FIG. 7 represents the LED layer structure in the first embodiment after the optimized annealing process is carried out. As shown in structure 700, the undoped …
FIG. 8 has a Magnesium doped confinement structure 850 of GaN, AlGaN, graded bandgap AlxGa₁-xN, InGaN or AGaInN layers with undoped GaN current spreading and …
FIG. 9 (structure 900). The objective in this embodiment is to preserve an already optimized 60 Magnesium doped confinement structure 850 (or an electron …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based light emitting diode (LED) device, com-prising: a substrate member, the substrate member being selected from at least one of a sapphire member, a SiC member, a GaN member, a AlN member, or a silicon member; a GaN buffer layer comprising a n-type doping material deposited on a surface region of the substrate member; an AlGaN confinement layer comprising an n-type doping material deposited directly overlying the GaN n-type buffer layer; an InGaN/GaN multi-quantum well (MQW) active region grown directly overlying the AlGaN confinement layer; an AlGaN layer to serve as an electron confinement layer; and optionally, an GaN layer to serve as a current spreading and ohmic contact layer grown directly overlying the undoped AlGaN confinement layer; wherein each of the AlGaN layer and the GaN layer comprises a plurality of beryllium impurities config-ured using ion implantation such that a region has been damaged by the ion implantation and configured to be activated by a high temperature annealing process that comprises an isothermal anneal on the region in a hydrogen and ammonia free ambient at temperatures in the range from 700 to 900 degrees Celsius for time period of greater than one second to facilitate removal of atomic hydrogen entities from the region such that a resulting beryllium doped material characterized by a low resistivity of less than 10 ohm-cm, p-type layers to 10-3 ohm-cm.
The device of claim 1 wherein the electron confinement layer is a layer selected from one of: a GaN Beryllium implanted p-type layer, a InGaN Beryllium implanted p-type layer, a AlInGaN Beryllium implanted p-type layer, a graded bandgap AlxGa₁-xN Beryllium implanted p-type layer, or a graded bandgap AlxInyGa₁-x-yN Beryllium implanted p-type layer.
The device of claim 1 wherein each of the electron confinement layer and the ohmic contact and current spread-ing layers comprises a magnesium doped confinement region, a current spreading region, and an ohmic contact layer provided prior to an ion implant and an annealing process.
The device of claim 1 wherein the current spreading layer is not optional.
The device of claim 1 wherein the MQW active region is optionally replaced with a doped or undoped GaN mate-rial.
The device of claim 1 wherein the MQW active region is optionally replaced with an doped or undoped AlGaN.
The device of claim 1 wherein the region is encapsu-lated using a nitrogen bearing material.
A GaN-based light emitting diode (LED) device, comprising: a substrate member, the substrate member being selected from at least one of a sapphire member, a SiC member, a GaN member, a AlN member, or a silicon member; a GaN buffer layer comprising a n-type doping material deposited on a surface region of the substrate member; an AlGaN confinement layer comprising an n-type doping material deposited directly overlying the GaN n-type buffer layer; an InGaN/GaN multi-quantum well (MQW) active region grown directly overlying the AlGaN confinement layer; an AlGaN layer to serve as an electron confinement layer; and optionally, an GaN layer to serve as a current spreading and ohmic contact layer grown directly overlying the AlGaN confinement layer; wherein each of the AlGaN layer and the GaN layer comprises a plurality of beryllium impurities config-ured using ion implantation such that a region has been damaged by the ion implantation and configured to be activated by a high temperature annealing process that comprises an isothermal anneal on the region in a hydrogen and ammonia free ambient at temperatures in the range from 700 to 900 degrees Celsius for time period of greater than one second to facilitate removal of atomic hydrogen entities from the region such that a resulting beryllium doped material characterized by a low resistivity of less than 10 ohm-cm, p-type layers to 10-3 ohm-cm.
The device of claim 11 wherein the electron confine-ment layer is a layer selected from one of: a GaN Beryllium implanted p-type layer, a InGaN Beryllium implanted p-type layer, a AlInGaN Beryllium implanted p-type layer, a graded bandgap AlxGa₁-xN Beryllium implanted p-type layer, or a graded bandgap AlxInyGa₁-x-yN Beryllium implanted p-type layer.
The device of claim 11 wherein each of the electron confinement layer and the ohmic contact and current spread-ing layers comprises a magnesium doped confinement region, a current spreading region, and an ohmic contact layer provided prior to an ion implant and an annealing process.
The device of claim 11 wherein the current spreading layer is not optional.
The device of claim 11 wherein the MQW active region is optionally replaced with a doped or undoped GaN material.
The device of claim 11 wherein the MQW active region is optionally replaced with an doped or undoped AlGaN.
The device of claim 11 wherein the region is encap-sulated using a nitrogen bearing material.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED with Be-implanted p-type layers (claim 1)
Materials described outside the worked examples.
GaN
AlGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph of wall plug efficiency vs. current for typical high power GaN-based LEDs;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
resistivity of Be-doped p-type GaN layer (claimed range) | 0.001–10 ohm-cm | AlGaN:Be |
typical resistivity of Mg-doped p-type GaN (background, prior art) | ≥ 1 ohm-cm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,062,738 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified diagram of an LED device accord- ing to a conventional example;
FIG. 2 is a graph of wall plug efficiency vs. current for typical high power GaN-based LEDs;
FIG. 3 is a graph of the current vs. voltage for typical high power GaN-based LEDs plotted on a logarithmic current axis;
FIG. 4 is a graph showing the distribution of Beryllium atoms in an ion implanted GaN sample according to an 5 example of the present invention; and
FIGS. 5-9 are simplified diagrams illustrating a method of fabricating an LED device according to an example of the present invention.
FIG. 6 is formed as a Beryllium doped GaN contact layer 770. The implant damage has been removed and the Beryl- 30 lium acceptors are activated. The high …
FIG. 7 represents the LED layer structure in the first embodiment after the optimized annealing process is carried out. As shown in structure 700, the undoped …
FIG. 8 has a Magnesium doped confinement structure 850 of GaN, AlGaN, graded bandgap AlxGa₁-xN, InGaN or AGaInN layers with undoped GaN current spreading and …
FIG. 9 (structure 900). The objective in this embodiment is to preserve an already optimized 60 Magnesium doped confinement structure 850 (or an electron …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based light emitting diode (LED) device, com-prising: a substrate member, the substrate member being selected from at least one of a sapphire member, a SiC member, a GaN member, a AlN member, or a silicon member; a GaN buffer layer comprising a n-type doping material deposited on a surface region of the substrate member; an AlGaN confinement layer comprising an n-type doping material deposited directly overlying the GaN n-type buffer layer; an InGaN/GaN multi-quantum well (MQW) active region grown directly overlying the AlGaN confinement layer; an AlGaN layer to serve as an electron confinement layer; and optionally, an GaN layer to serve as a current spreading and ohmic contact layer grown directly overlying the undoped AlGaN confinement layer; wherein each of the AlGaN layer and the GaN layer comprises a plurality of beryllium impurities config-ured using ion implantation such that a region has been damaged by the ion implantation and configured to be activated by a high temperature annealing process that comprises an isothermal anneal on the region in a hydrogen and ammonia free ambient at temperatures in the range from 700 to 900 degrees Celsius for time period of greater than one second to facilitate removal of atomic hydrogen entities from the region such that a resulting beryllium doped material characterized by a low resistivity of less than 10 ohm-cm, p-type layers to 10-3 ohm-cm.
The device of claim 1 wherein the electron confinement layer is a layer selected from one of: a GaN Beryllium implanted p-type layer, a InGaN Beryllium implanted p-type layer, a AlInGaN Beryllium implanted p-type layer, a graded bandgap AlxGa₁-xN Beryllium implanted p-type layer, or a graded bandgap AlxInyGa₁-x-yN Beryllium implanted p-type layer.
The device of claim 1 wherein each of the electron confinement layer and the ohmic contact and current spread-ing layers comprises a magnesium doped confinement region, a current spreading region, and an ohmic contact layer provided prior to an ion implant and an annealing process.
The device of claim 1 wherein the current spreading layer is not optional.
The device of claim 1 wherein the MQW active region is optionally replaced with a doped or undoped GaN mate-rial.
The device of claim 1 wherein the MQW active region is optionally replaced with an doped or undoped AlGaN.
The device of claim 1 wherein the region is encapsu-lated using a nitrogen bearing material.
A GaN-based light emitting diode (LED) device, comprising: a substrate member, the substrate member being selected from at least one of a sapphire member, a SiC member, a GaN member, a AlN member, or a silicon member; a GaN buffer layer comprising a n-type doping material deposited on a surface region of the substrate member; an AlGaN confinement layer comprising an n-type doping material deposited directly overlying the GaN n-type buffer layer; an InGaN/GaN multi-quantum well (MQW) active region grown directly overlying the AlGaN confinement layer; an AlGaN layer to serve as an electron confinement layer; and optionally, an GaN layer to serve as a current spreading and ohmic contact layer grown directly overlying the AlGaN confinement layer; wherein each of the AlGaN layer and the GaN layer comprises a plurality of beryllium impurities config-ured using ion implantation such that a region has been damaged by the ion implantation and configured to be activated by a high temperature annealing process that comprises an isothermal anneal on the region in a hydrogen and ammonia free ambient at temperatures in the range from 700 to 900 degrees Celsius for time period of greater than one second to facilitate removal of atomic hydrogen entities from the region such that a resulting beryllium doped material characterized by a low resistivity of less than 10 ohm-cm, p-type layers to 10-3 ohm-cm.
The device of claim 11 wherein the electron confine-ment layer is a layer selected from one of: a GaN Beryllium implanted p-type layer, a InGaN Beryllium implanted p-type layer, a AlInGaN Beryllium implanted p-type layer, a graded bandgap AlxGa₁-xN Beryllium implanted p-type layer, or a graded bandgap AlxInyGa₁-x-yN Beryllium implanted p-type layer.
The device of claim 11 wherein each of the electron confinement layer and the ohmic contact and current spread-ing layers comprises a magnesium doped confinement region, a current spreading region, and an ohmic contact layer provided prior to an ion implant and an annealing process.
The device of claim 11 wherein the current spreading layer is not optional.
The device of claim 11 wherein the MQW active region is optionally replaced with a doped or undoped GaN material.
The device of claim 11 wherein the MQW active region is optionally replaced with an doped or undoped AlGaN.
The device of claim 11 wherein the region is encap-sulated using a nitrogen bearing material.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED with Be-implanted p-type layers (claim 1)
Materials described outside the worked examples.
GaN
AlGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph of wall plug efficiency vs. current for typical high power GaN-based LEDs;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
resistivity of Be-doped p-type GaN layer (claimed range) | 0.001–10 ohm-cm | AlGaN:Be |
typical resistivity of Mg-doped p-type GaN (background, prior art) | ≥ 1 ohm-cm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
GaN-based LED with Be-implanted p-type layers (claim 11)
InGaN/GaN MQW
beryllium-doped AlGaN (p-type)
AlGaN:Be
beryllium-doped GaN (p-type)
GaN:Be
InGaN Beryllium implanted p-type layer
InGaN:Be
AlInGaN Beryllium implanted p-type layer
AlInGaN:Be
graded bandgap AlxGa₁-xN Beryllium implanted p-type layer
AlxGa₁-xN:Be
graded bandgap AlxInyGa₁-x-yN Beryllium implanted p-type layer
AlxInyGa₁-x-yN:Be
magnesium-doped GaN/AlGaN
nitrogen bearing encapsulant
GaN:Si (n-type buffer)
GaN:Si
AlGaN:Si (n-type confinement)
AlGaN:Si
AlGaN:Mg (p-type confinement)
AlGaN:Mg
FIG. 3 is a graph of the current vs. voltage for typical high power GaN-based LEDs plotted on a logarithmic current axis;
FIG. 4 is a graph showing the distribution of Beryllium atoms in an ion implanted GaN sample according to an 5 example of the present invention; and
FIG. 8 has a Magnesium doped confinement structure 850 of GaN, AlGaN, graded bandgap AlxGa₁-xN, InGaN or AGaInN layers with undoped GaN current spreading and …
Thickness | 3–1020 cm | — |
Pressure | ≥ 10000 atm | — |
GaN-based LED with Be-implanted p-type layers (claim 11)
InGaN/GaN MQW
beryllium-doped AlGaN (p-type)
AlGaN:Be
beryllium-doped GaN (p-type)
GaN:Be
InGaN Beryllium implanted p-type layer
InGaN:Be
AlInGaN Beryllium implanted p-type layer
AlInGaN:Be
graded bandgap AlxGa₁-xN Beryllium implanted p-type layer
AlxGa₁-xN:Be
graded bandgap AlxInyGa₁-x-yN Beryllium implanted p-type layer
AlxInyGa₁-x-yN:Be
magnesium-doped GaN/AlGaN
nitrogen bearing encapsulant
GaN:Si (n-type buffer)
GaN:Si
AlGaN:Si (n-type confinement)
AlGaN:Si
AlGaN:Mg (p-type confinement)
AlGaN:Mg
FIG. 3 is a graph of the current vs. voltage for typical high power GaN-based LEDs plotted on a logarithmic current axis;
FIG. 4 is a graph showing the distribution of Beryllium atoms in an ion implanted GaN sample according to an 5 example of the present invention; and
FIG. 8 has a Magnesium doped confinement structure 850 of GaN, AlGaN, graded bandgap AlxGa₁-xN, InGaN or AGaInN layers with undoped GaN current spreading and …
Thickness | 3–1020 cm | — |
Pressure | ≥ 10000 atm | — |
GaN-based LED with Be-implanted p-type layers (claim 11)
InGaN/GaN MQW
beryllium-doped AlGaN (p-type)
AlGaN:Be
beryllium-doped GaN (p-type)
GaN:Be
InGaN Beryllium implanted p-type layer
InGaN:Be
AlInGaN Beryllium implanted p-type layer
AlInGaN:Be
graded bandgap AlxGa₁-xN Beryllium implanted p-type layer
AlxGa₁-xN:Be
graded bandgap AlxInyGa₁-x-yN Beryllium implanted p-type layer
AlxInyGa₁-x-yN:Be
magnesium-doped GaN/AlGaN
nitrogen bearing encapsulant
GaN:Si (n-type buffer)
GaN:Si
AlGaN:Si (n-type confinement)
AlGaN:Si
AlGaN:Mg (p-type confinement)
AlGaN:Mg
FIG. 3 is a graph of the current vs. voltage for typical high power GaN-based LEDs plotted on a logarithmic current axis;
FIG. 4 is a graph showing the distribution of Beryllium atoms in an ion implanted GaN sample according to an 5 example of the present invention; and
FIG. 8 has a Magnesium doped confinement structure 850 of GaN, AlGaN, graded bandgap AlxGa₁-xN, InGaN or AGaInN layers with undoped GaN current spreading and …
Thickness | 3–1020 cm | — |
Pressure | ≥ 10000 atm | — |
GaN-based LED with Be-implanted p-type layers (claim 11)
InGaN/GaN MQW
beryllium-doped AlGaN (p-type)
AlGaN:Be
beryllium-doped GaN (p-type)
GaN:Be
InGaN Beryllium implanted p-type layer
InGaN:Be
AlInGaN Beryllium implanted p-type layer
AlInGaN:Be
graded bandgap AlxGa₁-xN Beryllium implanted p-type layer
AlxGa₁-xN:Be
graded bandgap AlxInyGa₁-x-yN Beryllium implanted p-type layer
AlxInyGa₁-x-yN:Be
magnesium-doped GaN/AlGaN
nitrogen bearing encapsulant
GaN:Si (n-type buffer)
GaN:Si
AlGaN:Si (n-type confinement)
AlGaN:Si
AlGaN:Mg (p-type confinement)
AlGaN:Mg
FIG. 3 is a graph of the current vs. voltage for typical high power GaN-based LEDs plotted on a logarithmic current axis;
FIG. 4 is a graph showing the distribution of Beryllium atoms in an ion implanted GaN sample according to an 5 example of the present invention; and
FIG. 8 has a Magnesium doped confinement structure 850 of GaN, AlGaN, graded bandgap AlxGa₁-xN, InGaN or AGaInN layers with undoped GaN current spreading and …
Thickness | 3–1020 cm | — |
Pressure | ≥ 10000 atm | — |