Patent
US 11,195,973III-NITRIDE MICRO-LEDS ON SEMI-POLAR ORIENTED GAN
Christopher Pynn
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,195,973Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Functions further described below may be distributed among components of console 110 in a different manner than is described here. [0054] In some …
FIGS. 2 and 3. Additionally, in various embodiments, the functionality described herein may be used in a headset that combines images of an environment …
FIG. 3 is a perspective view of an example of a near-eye display 300 in the form of a pair of glasses for implementing some of the examples disclosed herein. …
FIG. 4A illustrates an example of a light emitting diode 400 including a vertical mesa structure. LED 400 may be a micro-LED made of inorganic materials, such …
FIG. 5, the optical emission power of a micro-LED device may be low when the current density (and thus the charge carrier density N) is low, where the low …
FIG. 6A. When index c of a plane is nonzero, and any of the al and a2 indices of the plane is nonzero, the plane is a semi-polar plane. If index c of a plane …
FIG. 7A, the electron energy leve l 712 in conduction band 710 may shift to lower energy levels, while the hole energy leve l 722 in valence band 720 may shift …
FIG. 8, the micro-LED devices are fabricated on I II -nitride materials grown on the c-plane of a substrate. Curve 810 shows the external quantum efficiency as a …
FIG. 9B illustrates another example of a semi-polar plane 920 in crystal materia l 900 having a hexagonal crystal lattice structure according to certain …
FIG. 10 and may emit green light. Curve 1110 illustrates the external quantum efficiency as a function of the current density for a micro-LED device having a …
FIG. 11 illustrates the relationship between external quantum efficiency and current density for examples of semi-polar micro-LED devices having different sizes …
FIG. 12 illustrates the relationship between brightness within a given area and bias current for examples of semi-polar micro-LED devices having different sizes …
FIG. 13 shows that the semi-polar green micro-LEDs disclosed herein exhibit ood I-V characteristics, where the bias current increases exponentially with the …
FIG. 14 illustrates the relationship between the center wavelength of the emitted light and the bias current density for semi-polar micro-LEDs including …
FIG. 15 is a flow chart 1500 illustrating an example of a method of fabricating a micro- LED device with improved light emission efficiency according to certain …
FIG. 16 is a simplified block diagram of an example electronic system 1600 of an example near-eye display (e.g., HMD device) for implementing some of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A micro light emitting diode comprising: a substrate including a hexagonal lattice and having a top surface parallel to a semi- polar plane of the hexagonal lattice; and a mesa on the top surface of the substrate, the mesa including a sidewall and an active layer that includes a I II -nitride material, the active layer including: a side surface forming part of the sidewall of the mesa; and a bottom surface parallel to the semi-polar plane of the hexagonal lattice such that non-radiative surface recombination at the side surface of the active layer is reduced compared with a substitute active layer that includes the I II -nitride material and has a top or bottom surface parallel to a c-plane of the hexagonal lattice, wherein: an angle between the semi-polar plane and the c-plane of the hexagonal lattice is between 60 0 and 90 0; the bottom surface of the active layer in the mesa is characterized by a linear dimension less than 20 m; and a peak efficiency current density of the micro light emitting diode is less than 1 A/cm 2. Currently amended
The micro light emitting diode of claim 1, wherein the semi-polar plane includes a (2 0±) plane of the hexagonal lattice. Original
The micro light emitting diode of claim 1, wherein: the active layer is characterized by a first Shockley-Read-Hall (SRH) recombination rate in a region of the active layer adjacent to the side surface of the active layer; and the first SR H recombination rate is lower than a second SR H recombination rate, wherein the second SRH recombination rate corresponds to an SRH recombination rate in the region of the active layer adjacent to the side surface of the active layer when the bottom surface of the active layer is parallel to the c-plane of the hexagonal lattice. Original
The micro light emitting diode of claim 1, further comprising a passivation layer on the sidewall of the mesa, wherein: the active layer is configured to emit photons through radiative recombination of electrons and holes in the active layer; and the passivation layer is configured to reflect the photons emitted by the active layer. Original
The micro light emitting diode of claim 1, wherein the substrate includes GaN, GaAs, GaP, sapphire, silicon carbide, silicon, zin c oxide, boron nitride, lithium aluminate, lithium niobate, germanium, aluminum nitride, lithium gallate, partially substituted spinel, or quaternary tetragonal oxide having a beta-L iAlO 2 structure. Original
The micro light emitting diode of claim 1, wherein the active layer includes an InGaN multiple-quantum-well (MQW). Original
The micro light emitting diode of claim 1, wherein a blue-shift of the micro light emitting diode is less than 15 nm when a current density of the micro light emitting diode is increased ten times. Original
The micro light emitting diode of claim 1, further comprising a buffer layer between the substrate and the mesa. Original
The micro light emitting diode of claim 1, wherein the mesa further includes an electron-blocking layer coupled to the active layer. Previously presented
2-5. Canceled
Canceled
A display device comprising: a substrate including a hexagonal la tt ice and a top surface parallel to a semi-polar plane of the hexagonal lattice; and an array of mesas on the top surface of the substrate, each mesa including a sidewall and an active layer that includes a III -nitride material, the active layer including: a side surface forming part of the sidewall of the mesa; and a bottom surface parallel to the semi-polar plane of the hexagonal lattice such that non-radiative surface recombination at the side surface of the active layer is reduced compared with a substitute active layer that includes the III -nitride material and has a top or bottom surface parallel to a c-plane of the hexagonal lattice, wherein: an angle between the semi-polar plane and the c-plane of the hexagonal lattice is between 60 0 and 90 0; the bottom surface of the active layer in the mesa is characterized by a linear dimension less than 20 m; and a peak efficiency current density of the mesa is less than 1 A/cm 2. Currently amended
The display device of claim 16, further comprising a passivation layer on the sidewall of each mesa in the array of mesas, the passivation layer configured to reflect photons emitted by the active layer. Original
The display device of claim 16, wherein the semi-polar plane includes a (2 01) plane of the hexagonal lattice. Previously presented
The display device of claim 16, wherein the substrate includes GaN, GaAs, GaP, sapphire, silicon carbide, silicon, zin c oxide, boron nitride, lithium aluminate, lithium niobate, germanium, aluminum nitride, lithium gallate, partially substituted spinel, or quaternary tetragonal oxide having a beta-L iAlO 2 structure. Previously presented
The display device of claim 16, wherein the active layer includes an InGaN multiple-quantum-well (MQW). Previously presented
The display device of claim 16, wherein a blue-shift of the mesa is less than 15 nm when a current density of the mesa is increased ten times. Previously presented
The display device of claim 16, further comprising a buffer layer between the substrate and the mesa. Previously presented
The display device of claim 16, wherein the mesa further includes an electron-blocking layer coupled to the active layer. Previously presented
17-19. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
micro light emitting diode
display device with array of micro-LED mesas
Materials described outside the worked examples.
III-nitride material
hexagonal lattice substrate
substrate material
InGaN multiple-quantum-well (MQW)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4A illustrates an example of a light emitting diode 400 including a vertical mesa structure. LED 400 may be a micro-LED made of inorganic materials, such …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
peak_efficiency_current_density | ≤ 1 A/cm² | — |
blue_shift_per_decade_current_density | ≤ 15 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
P-GAN-DOWN MICRO-LED ON SEMI-POLAR ORIENTED GAN
SEMICONDUCTOR STRUCTURES HAVING ACTIVE REGIONS INCLUDING INDIUM GALLIUM NITRIDE, METHODS OF FORMING SUCH SEMICONDUCTOR STRUCTURES, AND RELATED LIGHT EMITTING DEVICES
Patent
Atlas literature
Patent
US 11,195,973Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Functions further described below may be distributed among components of console 110 in a different manner than is described here. [0054] In some …
FIGS. 2 and 3. Additionally, in various embodiments, the functionality described herein may be used in a headset that combines images of an environment …
FIG. 3 is a perspective view of an example of a near-eye display 300 in the form of a pair of glasses for implementing some of the examples disclosed herein. …
FIG. 4A illustrates an example of a light emitting diode 400 including a vertical mesa structure. LED 400 may be a micro-LED made of inorganic materials, such …
FIG. 5, the optical emission power of a micro-LED device may be low when the current density (and thus the charge carrier density N) is low, where the low …
FIG. 6A. When index c of a plane is nonzero, and any of the al and a2 indices of the plane is nonzero, the plane is a semi-polar plane. If index c of a plane …
FIG. 7A, the electron energy leve l 712 in conduction band 710 may shift to lower energy levels, while the hole energy leve l 722 in valence band 720 may shift …
FIG. 8, the micro-LED devices are fabricated on I II -nitride materials grown on the c-plane of a substrate. Curve 810 shows the external quantum efficiency as a …
FIG. 9B illustrates another example of a semi-polar plane 920 in crystal materia l 900 having a hexagonal crystal lattice structure according to certain …
FIG. 10 and may emit green light. Curve 1110 illustrates the external quantum efficiency as a function of the current density for a micro-LED device having a …
FIG. 11 illustrates the relationship between external quantum efficiency and current density for examples of semi-polar micro-LED devices having different sizes …
FIG. 12 illustrates the relationship between brightness within a given area and bias current for examples of semi-polar micro-LED devices having different sizes …
FIG. 13 shows that the semi-polar green micro-LEDs disclosed herein exhibit ood I-V characteristics, where the bias current increases exponentially with the …
FIG. 14 illustrates the relationship between the center wavelength of the emitted light and the bias current density for semi-polar micro-LEDs including …
FIG. 15 is a flow chart 1500 illustrating an example of a method of fabricating a micro- LED device with improved light emission efficiency according to certain …
FIG. 16 is a simplified block diagram of an example electronic system 1600 of an example near-eye display (e.g., HMD device) for implementing some of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A micro light emitting diode comprising: a substrate including a hexagonal lattice and having a top surface parallel to a semi- polar plane of the hexagonal lattice; and a mesa on the top surface of the substrate, the mesa including a sidewall and an active layer that includes a I II -nitride material, the active layer including: a side surface forming part of the sidewall of the mesa; and a bottom surface parallel to the semi-polar plane of the hexagonal lattice such that non-radiative surface recombination at the side surface of the active layer is reduced compared with a substitute active layer that includes the I II -nitride material and has a top or bottom surface parallel to a c-plane of the hexagonal lattice, wherein: an angle between the semi-polar plane and the c-plane of the hexagonal lattice is between 60 0 and 90 0; the bottom surface of the active layer in the mesa is characterized by a linear dimension less than 20 m; and a peak efficiency current density of the micro light emitting diode is less than 1 A/cm 2. Currently amended
The micro light emitting diode of claim 1, wherein the semi-polar plane includes a (2 0±) plane of the hexagonal lattice. Original
The micro light emitting diode of claim 1, wherein: the active layer is characterized by a first Shockley-Read-Hall (SRH) recombination rate in a region of the active layer adjacent to the side surface of the active layer; and the first SR H recombination rate is lower than a second SR H recombination rate, wherein the second SRH recombination rate corresponds to an SRH recombination rate in the region of the active layer adjacent to the side surface of the active layer when the bottom surface of the active layer is parallel to the c-plane of the hexagonal lattice. Original
The micro light emitting diode of claim 1, further comprising a passivation layer on the sidewall of the mesa, wherein: the active layer is configured to emit photons through radiative recombination of electrons and holes in the active layer; and the passivation layer is configured to reflect the photons emitted by the active layer. Original
The micro light emitting diode of claim 1, wherein the substrate includes GaN, GaAs, GaP, sapphire, silicon carbide, silicon, zin c oxide, boron nitride, lithium aluminate, lithium niobate, germanium, aluminum nitride, lithium gallate, partially substituted spinel, or quaternary tetragonal oxide having a beta-L iAlO 2 structure. Original
The micro light emitting diode of claim 1, wherein the active layer includes an InGaN multiple-quantum-well (MQW). Original
The micro light emitting diode of claim 1, wherein a blue-shift of the micro light emitting diode is less than 15 nm when a current density of the micro light emitting diode is increased ten times. Original
The micro light emitting diode of claim 1, further comprising a buffer layer between the substrate and the mesa. Original
The micro light emitting diode of claim 1, wherein the mesa further includes an electron-blocking layer coupled to the active layer. Previously presented
2-5. Canceled
Canceled
A display device comprising: a substrate including a hexagonal la tt ice and a top surface parallel to a semi-polar plane of the hexagonal lattice; and an array of mesas on the top surface of the substrate, each mesa including a sidewall and an active layer that includes a III -nitride material, the active layer including: a side surface forming part of the sidewall of the mesa; and a bottom surface parallel to the semi-polar plane of the hexagonal lattice such that non-radiative surface recombination at the side surface of the active layer is reduced compared with a substitute active layer that includes the III -nitride material and has a top or bottom surface parallel to a c-plane of the hexagonal lattice, wherein: an angle between the semi-polar plane and the c-plane of the hexagonal lattice is between 60 0 and 90 0; the bottom surface of the active layer in the mesa is characterized by a linear dimension less than 20 m; and a peak efficiency current density of the mesa is less than 1 A/cm 2. Currently amended
The display device of claim 16, further comprising a passivation layer on the sidewall of each mesa in the array of mesas, the passivation layer configured to reflect photons emitted by the active layer. Original
The display device of claim 16, wherein the semi-polar plane includes a (2 01) plane of the hexagonal lattice. Previously presented
The display device of claim 16, wherein the substrate includes GaN, GaAs, GaP, sapphire, silicon carbide, silicon, zin c oxide, boron nitride, lithium aluminate, lithium niobate, germanium, aluminum nitride, lithium gallate, partially substituted spinel, or quaternary tetragonal oxide having a beta-L iAlO 2 structure. Previously presented
The display device of claim 16, wherein the active layer includes an InGaN multiple-quantum-well (MQW). Previously presented
The display device of claim 16, wherein a blue-shift of the mesa is less than 15 nm when a current density of the mesa is increased ten times. Previously presented
The display device of claim 16, further comprising a buffer layer between the substrate and the mesa. Previously presented
The display device of claim 16, wherein the mesa further includes an electron-blocking layer coupled to the active layer. Previously presented
17-19. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
micro light emitting diode
display device with array of micro-LED mesas
Materials described outside the worked examples.
III-nitride material
hexagonal lattice substrate
substrate material
InGaN multiple-quantum-well (MQW)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4A illustrates an example of a light emitting diode 400 including a vertical mesa structure. LED 400 may be a micro-LED made of inorganic materials, such …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
peak_efficiency_current_density | ≤ 1 A/cm² | — |
blue_shift_per_decade_current_density | ≤ 15 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
P-GAN-DOWN MICRO-LED ON SEMI-POLAR ORIENTED GAN
SEMICONDUCTOR STRUCTURES HAVING ACTIVE REGIONS INCLUDING INDIUM GALLIUM NITRIDE, METHODS OF FORMING SUCH SEMICONDUCTOR STRUCTURES, AND RELATED LIGHT EMITTING DEVICES
Patent
Atlas literature
Patent
US 11,195,973Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Functions further described below may be distributed among components of console 110 in a different manner than is described here. [0054] In some …
FIGS. 2 and 3. Additionally, in various embodiments, the functionality described herein may be used in a headset that combines images of an environment …
FIG. 3 is a perspective view of an example of a near-eye display 300 in the form of a pair of glasses for implementing some of the examples disclosed herein. …
FIG. 4A illustrates an example of a light emitting diode 400 including a vertical mesa structure. LED 400 may be a micro-LED made of inorganic materials, such …
FIG. 5, the optical emission power of a micro-LED device may be low when the current density (and thus the charge carrier density N) is low, where the low …
FIG. 6A. When index c of a plane is nonzero, and any of the al and a2 indices of the plane is nonzero, the plane is a semi-polar plane. If index c of a plane …
FIG. 7A, the electron energy leve l 712 in conduction band 710 may shift to lower energy levels, while the hole energy leve l 722 in valence band 720 may shift …
FIG. 8, the micro-LED devices are fabricated on I II -nitride materials grown on the c-plane of a substrate. Curve 810 shows the external quantum efficiency as a …
FIG. 9B illustrates another example of a semi-polar plane 920 in crystal materia l 900 having a hexagonal crystal lattice structure according to certain …
FIG. 10 and may emit green light. Curve 1110 illustrates the external quantum efficiency as a function of the current density for a micro-LED device having a …
FIG. 11 illustrates the relationship between external quantum efficiency and current density for examples of semi-polar micro-LED devices having different sizes …
FIG. 12 illustrates the relationship between brightness within a given area and bias current for examples of semi-polar micro-LED devices having different sizes …
FIG. 13 shows that the semi-polar green micro-LEDs disclosed herein exhibit ood I-V characteristics, where the bias current increases exponentially with the …
FIG. 14 illustrates the relationship between the center wavelength of the emitted light and the bias current density for semi-polar micro-LEDs including …
FIG. 15 is a flow chart 1500 illustrating an example of a method of fabricating a micro- LED device with improved light emission efficiency according to certain …
FIG. 16 is a simplified block diagram of an example electronic system 1600 of an example near-eye display (e.g., HMD device) for implementing some of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A micro light emitting diode comprising: a substrate including a hexagonal lattice and having a top surface parallel to a semi- polar plane of the hexagonal lattice; and a mesa on the top surface of the substrate, the mesa including a sidewall and an active layer that includes a I II -nitride material, the active layer including: a side surface forming part of the sidewall of the mesa; and a bottom surface parallel to the semi-polar plane of the hexagonal lattice such that non-radiative surface recombination at the side surface of the active layer is reduced compared with a substitute active layer that includes the I II -nitride material and has a top or bottom surface parallel to a c-plane of the hexagonal lattice, wherein: an angle between the semi-polar plane and the c-plane of the hexagonal lattice is between 60 0 and 90 0; the bottom surface of the active layer in the mesa is characterized by a linear dimension less than 20 m; and a peak efficiency current density of the micro light emitting diode is less than 1 A/cm 2. Currently amended
The micro light emitting diode of claim 1, wherein the semi-polar plane includes a (2 0±) plane of the hexagonal lattice. Original
The micro light emitting diode of claim 1, wherein: the active layer is characterized by a first Shockley-Read-Hall (SRH) recombination rate in a region of the active layer adjacent to the side surface of the active layer; and the first SR H recombination rate is lower than a second SR H recombination rate, wherein the second SRH recombination rate corresponds to an SRH recombination rate in the region of the active layer adjacent to the side surface of the active layer when the bottom surface of the active layer is parallel to the c-plane of the hexagonal lattice. Original
The micro light emitting diode of claim 1, further comprising a passivation layer on the sidewall of the mesa, wherein: the active layer is configured to emit photons through radiative recombination of electrons and holes in the active layer; and the passivation layer is configured to reflect the photons emitted by the active layer. Original
The micro light emitting diode of claim 1, wherein the substrate includes GaN, GaAs, GaP, sapphire, silicon carbide, silicon, zin c oxide, boron nitride, lithium aluminate, lithium niobate, germanium, aluminum nitride, lithium gallate, partially substituted spinel, or quaternary tetragonal oxide having a beta-L iAlO 2 structure. Original
The micro light emitting diode of claim 1, wherein the active layer includes an InGaN multiple-quantum-well (MQW). Original
The micro light emitting diode of claim 1, wherein a blue-shift of the micro light emitting diode is less than 15 nm when a current density of the micro light emitting diode is increased ten times. Original
The micro light emitting diode of claim 1, further comprising a buffer layer between the substrate and the mesa. Original
The micro light emitting diode of claim 1, wherein the mesa further includes an electron-blocking layer coupled to the active layer. Previously presented
2-5. Canceled
Canceled
A display device comprising: a substrate including a hexagonal la tt ice and a top surface parallel to a semi-polar plane of the hexagonal lattice; and an array of mesas on the top surface of the substrate, each mesa including a sidewall and an active layer that includes a III -nitride material, the active layer including: a side surface forming part of the sidewall of the mesa; and a bottom surface parallel to the semi-polar plane of the hexagonal lattice such that non-radiative surface recombination at the side surface of the active layer is reduced compared with a substitute active layer that includes the III -nitride material and has a top or bottom surface parallel to a c-plane of the hexagonal lattice, wherein: an angle between the semi-polar plane and the c-plane of the hexagonal lattice is between 60 0 and 90 0; the bottom surface of the active layer in the mesa is characterized by a linear dimension less than 20 m; and a peak efficiency current density of the mesa is less than 1 A/cm 2. Currently amended
The display device of claim 16, further comprising a passivation layer on the sidewall of each mesa in the array of mesas, the passivation layer configured to reflect photons emitted by the active layer. Original
The display device of claim 16, wherein the semi-polar plane includes a (2 01) plane of the hexagonal lattice. Previously presented
The display device of claim 16, wherein the substrate includes GaN, GaAs, GaP, sapphire, silicon carbide, silicon, zin c oxide, boron nitride, lithium aluminate, lithium niobate, germanium, aluminum nitride, lithium gallate, partially substituted spinel, or quaternary tetragonal oxide having a beta-L iAlO 2 structure. Previously presented
The display device of claim 16, wherein the active layer includes an InGaN multiple-quantum-well (MQW). Previously presented
The display device of claim 16, wherein a blue-shift of the mesa is less than 15 nm when a current density of the mesa is increased ten times. Previously presented
The display device of claim 16, further comprising a buffer layer between the substrate and the mesa. Previously presented
The display device of claim 16, wherein the mesa further includes an electron-blocking layer coupled to the active layer. Previously presented
17-19. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
micro light emitting diode
display device with array of micro-LED mesas
Materials described outside the worked examples.
III-nitride material
hexagonal lattice substrate
substrate material
InGaN multiple-quantum-well (MQW)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4A illustrates an example of a light emitting diode 400 including a vertical mesa structure. LED 400 may be a micro-LED made of inorganic materials, such …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
peak_efficiency_current_density | ≤ 1 A/cm² | — |
blue_shift_per_decade_current_density | ≤ 15 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
P-GAN-DOWN MICRO-LED ON SEMI-POLAR ORIENTED GAN
SEMICONDUCTOR STRUCTURES HAVING ACTIVE REGIONS INCLUDING INDIUM GALLIUM NITRIDE, METHODS OF FORMING SUCH SEMICONDUCTOR STRUCTURES, AND RELATED LIGHT EMITTING DEVICES
Patent
Atlas literature
Patent
US 11,195,973Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Functions further described below may be distributed among components of console 110 in a different manner than is described here. [0054] In some …
FIGS. 2 and 3. Additionally, in various embodiments, the functionality described herein may be used in a headset that combines images of an environment …
FIG. 3 is a perspective view of an example of a near-eye display 300 in the form of a pair of glasses for implementing some of the examples disclosed herein. …
FIG. 4A illustrates an example of a light emitting diode 400 including a vertical mesa structure. LED 400 may be a micro-LED made of inorganic materials, such …
FIG. 5, the optical emission power of a micro-LED device may be low when the current density (and thus the charge carrier density N) is low, where the low …
FIG. 6A. When index c of a plane is nonzero, and any of the al and a2 indices of the plane is nonzero, the plane is a semi-polar plane. If index c of a plane …
FIG. 7A, the electron energy leve l 712 in conduction band 710 may shift to lower energy levels, while the hole energy leve l 722 in valence band 720 may shift …
FIG. 8, the micro-LED devices are fabricated on I II -nitride materials grown on the c-plane of a substrate. Curve 810 shows the external quantum efficiency as a …
FIG. 9B illustrates another example of a semi-polar plane 920 in crystal materia l 900 having a hexagonal crystal lattice structure according to certain …
FIG. 10 and may emit green light. Curve 1110 illustrates the external quantum efficiency as a function of the current density for a micro-LED device having a …
FIG. 11 illustrates the relationship between external quantum efficiency and current density for examples of semi-polar micro-LED devices having different sizes …
FIG. 12 illustrates the relationship between brightness within a given area and bias current for examples of semi-polar micro-LED devices having different sizes …
FIG. 13 shows that the semi-polar green micro-LEDs disclosed herein exhibit ood I-V characteristics, where the bias current increases exponentially with the …
FIG. 14 illustrates the relationship between the center wavelength of the emitted light and the bias current density for semi-polar micro-LEDs including …
FIG. 15 is a flow chart 1500 illustrating an example of a method of fabricating a micro- LED device with improved light emission efficiency according to certain …
FIG. 16 is a simplified block diagram of an example electronic system 1600 of an example near-eye display (e.g., HMD device) for implementing some of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A micro light emitting diode comprising: a substrate including a hexagonal lattice and having a top surface parallel to a semi- polar plane of the hexagonal lattice; and a mesa on the top surface of the substrate, the mesa including a sidewall and an active layer that includes a I II -nitride material, the active layer including: a side surface forming part of the sidewall of the mesa; and a bottom surface parallel to the semi-polar plane of the hexagonal lattice such that non-radiative surface recombination at the side surface of the active layer is reduced compared with a substitute active layer that includes the I II -nitride material and has a top or bottom surface parallel to a c-plane of the hexagonal lattice, wherein: an angle between the semi-polar plane and the c-plane of the hexagonal lattice is between 60 0 and 90 0; the bottom surface of the active layer in the mesa is characterized by a linear dimension less than 20 m; and a peak efficiency current density of the micro light emitting diode is less than 1 A/cm 2. Currently amended
The micro light emitting diode of claim 1, wherein the semi-polar plane includes a (2 0±) plane of the hexagonal lattice. Original
The micro light emitting diode of claim 1, wherein: the active layer is characterized by a first Shockley-Read-Hall (SRH) recombination rate in a region of the active layer adjacent to the side surface of the active layer; and the first SR H recombination rate is lower than a second SR H recombination rate, wherein the second SRH recombination rate corresponds to an SRH recombination rate in the region of the active layer adjacent to the side surface of the active layer when the bottom surface of the active layer is parallel to the c-plane of the hexagonal lattice. Original
The micro light emitting diode of claim 1, further comprising a passivation layer on the sidewall of the mesa, wherein: the active layer is configured to emit photons through radiative recombination of electrons and holes in the active layer; and the passivation layer is configured to reflect the photons emitted by the active layer. Original
The micro light emitting diode of claim 1, wherein the substrate includes GaN, GaAs, GaP, sapphire, silicon carbide, silicon, zin c oxide, boron nitride, lithium aluminate, lithium niobate, germanium, aluminum nitride, lithium gallate, partially substituted spinel, or quaternary tetragonal oxide having a beta-L iAlO 2 structure. Original
The micro light emitting diode of claim 1, wherein the active layer includes an InGaN multiple-quantum-well (MQW). Original
The micro light emitting diode of claim 1, wherein a blue-shift of the micro light emitting diode is less than 15 nm when a current density of the micro light emitting diode is increased ten times. Original
The micro light emitting diode of claim 1, further comprising a buffer layer between the substrate and the mesa. Original
The micro light emitting diode of claim 1, wherein the mesa further includes an electron-blocking layer coupled to the active layer. Previously presented
2-5. Canceled
Canceled
A display device comprising: a substrate including a hexagonal la tt ice and a top surface parallel to a semi-polar plane of the hexagonal lattice; and an array of mesas on the top surface of the substrate, each mesa including a sidewall and an active layer that includes a III -nitride material, the active layer including: a side surface forming part of the sidewall of the mesa; and a bottom surface parallel to the semi-polar plane of the hexagonal lattice such that non-radiative surface recombination at the side surface of the active layer is reduced compared with a substitute active layer that includes the III -nitride material and has a top or bottom surface parallel to a c-plane of the hexagonal lattice, wherein: an angle between the semi-polar plane and the c-plane of the hexagonal lattice is between 60 0 and 90 0; the bottom surface of the active layer in the mesa is characterized by a linear dimension less than 20 m; and a peak efficiency current density of the mesa is less than 1 A/cm 2. Currently amended
The display device of claim 16, further comprising a passivation layer on the sidewall of each mesa in the array of mesas, the passivation layer configured to reflect photons emitted by the active layer. Original
The display device of claim 16, wherein the semi-polar plane includes a (2 01) plane of the hexagonal lattice. Previously presented
The display device of claim 16, wherein the substrate includes GaN, GaAs, GaP, sapphire, silicon carbide, silicon, zin c oxide, boron nitride, lithium aluminate, lithium niobate, germanium, aluminum nitride, lithium gallate, partially substituted spinel, or quaternary tetragonal oxide having a beta-L iAlO 2 structure. Previously presented
The display device of claim 16, wherein the active layer includes an InGaN multiple-quantum-well (MQW). Previously presented
The display device of claim 16, wherein a blue-shift of the mesa is less than 15 nm when a current density of the mesa is increased ten times. Previously presented
The display device of claim 16, further comprising a buffer layer between the substrate and the mesa. Previously presented
The display device of claim 16, wherein the mesa further includes an electron-blocking layer coupled to the active layer. Previously presented
17-19. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
micro light emitting diode
display device with array of micro-LED mesas
Materials described outside the worked examples.
III-nitride material
hexagonal lattice substrate
substrate material
InGaN multiple-quantum-well (MQW)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4A illustrates an example of a light emitting diode 400 including a vertical mesa structure. LED 400 may be a micro-LED made of inorganic materials, such …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
peak_efficiency_current_density | ≤ 1 A/cm² | — |
blue_shift_per_decade_current_density | ≤ 15 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
P-GAN-DOWN MICRO-LED ON SEMI-POLAR ORIENTED GAN
SEMICONDUCTOR STRUCTURES HAVING ACTIVE REGIONS INCLUDING INDIUM GALLIUM NITRIDE, METHODS OF FORMING SUCH SEMICONDUCTOR STRUCTURES, AND RELATED LIGHT EMITTING DEVICES
InGaN
GaN
AlN
InN
FIG. 5, the optical emission power of a micro-LED device may be low when the current density (and thus the charge carrier density N) is low, where the low …
FIG. 7A, the electron energy leve l 712 in conduction band 710 may shift to lower energy levels, while the hole energy leve l 722 in valence band 720 may shift …
FIG. 7A, the electron energy leve l 712 in conduction band 710 may shift to lower energy levels, while the hole energy leve l 722 in valence band 720 may shift …
FIG. 8, the micro-LED devices are fabricated on I II -nitride materials grown on the c-plane of a substrate. Curve 810 shows the external quantum efficiency as a …
FIG. 10 and may emit green light. Curve 1110 illustrates the external quantum efficiency as a function of the current density for a micro-LED device having a …
FIG. 10 and may emit green light. Curve 1110 illustrates the external quantum efficiency as a function of the current density for a micro-LED device having a …
FIG. 11 illustrates the relationship between external quantum efficiency and current density for examples of semi-polar micro-LED devices having different sizes …
FIG. 13 shows that the semi-polar green micro-LEDs disclosed herein exhibit ood I-V characteristics, where the bias current increases exponentially with the …
FIG. 13 shows that the semi-polar green micro-LEDs disclosed herein exhibit ood I-V characteristics, where the bias current increases exponentially with the …
FIG. 14 illustrates the relationship between the center wavelength of the emitted light and the bias current density for semi-polar micro-LEDs including …
| 380–750 nm |
| — |
Thickness | 750–1000000 nm | — |
Thickness | 10–380 nm | — |
Thickness | 1–2 mm | — |
Thickness | ≥ 30 nm | — |
InGaN
GaN
AlN
InN
FIG. 5, the optical emission power of a micro-LED device may be low when the current density (and thus the charge carrier density N) is low, where the low …
FIG. 7A, the electron energy leve l 712 in conduction band 710 may shift to lower energy levels, while the hole energy leve l 722 in valence band 720 may shift …
FIG. 7A, the electron energy leve l 712 in conduction band 710 may shift to lower energy levels, while the hole energy leve l 722 in valence band 720 may shift …
FIG. 8, the micro-LED devices are fabricated on I II -nitride materials grown on the c-plane of a substrate. Curve 810 shows the external quantum efficiency as a …
FIG. 10 and may emit green light. Curve 1110 illustrates the external quantum efficiency as a function of the current density for a micro-LED device having a …
FIG. 10 and may emit green light. Curve 1110 illustrates the external quantum efficiency as a function of the current density for a micro-LED device having a …
FIG. 11 illustrates the relationship between external quantum efficiency and current density for examples of semi-polar micro-LED devices having different sizes …
FIG. 13 shows that the semi-polar green micro-LEDs disclosed herein exhibit ood I-V characteristics, where the bias current increases exponentially with the …
FIG. 13 shows that the semi-polar green micro-LEDs disclosed herein exhibit ood I-V characteristics, where the bias current increases exponentially with the …
FIG. 14 illustrates the relationship between the center wavelength of the emitted light and the bias current density for semi-polar micro-LEDs including …
| 380–750 nm |
| — |
Thickness | 750–1000000 nm | — |
Thickness | 10–380 nm | — |
Thickness | 1–2 mm | — |
Thickness | ≥ 30 nm | — |
InGaN
GaN
AlN
InN
FIG. 5, the optical emission power of a micro-LED device may be low when the current density (and thus the charge carrier density N) is low, where the low …
FIG. 7A, the electron energy leve l 712 in conduction band 710 may shift to lower energy levels, while the hole energy leve l 722 in valence band 720 may shift …
FIG. 7A, the electron energy leve l 712 in conduction band 710 may shift to lower energy levels, while the hole energy leve l 722 in valence band 720 may shift …
FIG. 8, the micro-LED devices are fabricated on I II -nitride materials grown on the c-plane of a substrate. Curve 810 shows the external quantum efficiency as a …
FIG. 10 and may emit green light. Curve 1110 illustrates the external quantum efficiency as a function of the current density for a micro-LED device having a …
FIG. 10 and may emit green light. Curve 1110 illustrates the external quantum efficiency as a function of the current density for a micro-LED device having a …
FIG. 11 illustrates the relationship between external quantum efficiency and current density for examples of semi-polar micro-LED devices having different sizes …
FIG. 13 shows that the semi-polar green micro-LEDs disclosed herein exhibit ood I-V characteristics, where the bias current increases exponentially with the …
FIG. 13 shows that the semi-polar green micro-LEDs disclosed herein exhibit ood I-V characteristics, where the bias current increases exponentially with the …
FIG. 14 illustrates the relationship between the center wavelength of the emitted light and the bias current density for semi-polar micro-LEDs including …
| 380–750 nm |
| — |
Thickness | 750–1000000 nm | — |
Thickness | 10–380 nm | — |
Thickness | 1–2 mm | — |
Thickness | ≥ 30 nm | — |
InGaN
GaN
AlN
InN
FIG. 5, the optical emission power of a micro-LED device may be low when the current density (and thus the charge carrier density N) is low, where the low …
FIG. 7A, the electron energy leve l 712 in conduction band 710 may shift to lower energy levels, while the hole energy leve l 722 in valence band 720 may shift …
FIG. 7A, the electron energy leve l 712 in conduction band 710 may shift to lower energy levels, while the hole energy leve l 722 in valence band 720 may shift …
FIG. 8, the micro-LED devices are fabricated on I II -nitride materials grown on the c-plane of a substrate. Curve 810 shows the external quantum efficiency as a …
FIG. 10 and may emit green light. Curve 1110 illustrates the external quantum efficiency as a function of the current density for a micro-LED device having a …
FIG. 10 and may emit green light. Curve 1110 illustrates the external quantum efficiency as a function of the current density for a micro-LED device having a …
FIG. 11 illustrates the relationship between external quantum efficiency and current density for examples of semi-polar micro-LED devices having different sizes …
FIG. 13 shows that the semi-polar green micro-LEDs disclosed herein exhibit ood I-V characteristics, where the bias current increases exponentially with the …
FIG. 13 shows that the semi-polar green micro-LEDs disclosed herein exhibit ood I-V characteristics, where the bias current increases exponentially with the …
FIG. 14 illustrates the relationship between the center wavelength of the emitted light and the bias current density for semi-polar micro-LEDs including …
| 380–750 nm |
| — |
Thickness | 750–1000000 nm | — |
Thickness | 10–380 nm | — |
Thickness | 1–2 mm | — |
Thickness | ≥ 30 nm | — |