A light-emitting diode (LED) comprising: an active layer comprising: one or more multilayer potential barriers; and at least one well layer; wherein each multilayer potential barrier comprises: interlacing first and second InAlGaN thin layers; wherein the first and second InAlGaN thin layers have compositions selected with respect to the well layer such that a polarization effect is substantially reduced; wherein the first InA l GaN thin layers each has gradual composition variations therein such that each of the first InAlGaN thin layers has a non-rectangular-shaped barrier structure; [[and]] wherein the multiplayer multilayer potential barriers and the at least one well layer have their lattice constants substantially matched; and wherein the first thin layers are Al x Iny 1 _aiXi., 1 N layers with 0.1<x1<0.45, 0.2<y1<0.4.

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canceled

A display, signage, or lighting system comprising a plurality of light-emitting diodes (LEDs), wherein each LED comprises: an active layer comprising: one or more multilayer potential barriers; and at least one well layer; wherein each multilayer potential barrier comprises: interlacing first and second InAlGaN thin layers; wherein the first and second InAlGaN thin layers have compositions selected with respect to the well layer such that a polarization effect is substantially reduced; wherein the first thin layers are Al 1 jIny 1 GaiXiy 1 N layers with 0<x1<1, 0<yl<l, xl + yl<l 0.1<x1<0.45, 0.2<yl<0.4, the second thin layers are A lx2Iny 2 Ga i-x2-y 2 N layers with Ox2<1, 0<y2<1, x2 + y2<1 0<x2<0.2, 0.05<y2<0.4, wherein x l x2, yl y2; wherein the second thin layers are formed to have gradually lower well depth toward the well layer on one side of the well layer, and gradually lower well depth away from the well layer on another side of the well layer; wherein the first InAlGaN thin layers each has gradual composition variations therein such that each of the first InAlGaN thin layers has a nonrectangular-shaped barrier structure; and wherein the multiplayer multilayer potential barriers and the at least one well layer have their lattice constants substantially matched.

A light-emitting diode (LED) comprising: an active layer comprising: one or more multilayer potential barriers; and at least one well layer; wherein each multilayer potential barrier comprises: interlacing first and second InAlGaN thin layers; wherein the first and second InAlGaN thin layers have compositions selected with respect to the well layer such that a polarization effect is substantially reduced; wherein the first InA l GaN thin layers each has gradual composition variations therein such that each of the first InAlGaN thin layers has a non-rectangular-shaped barrier structure; [[and]] wherein the multiplayer multilayer potential barriers and the at least one well layer have their lattice constants substantially matched; and wherein the first thin layers are Al x Iny 1 _aiXi., 1 N layers with 0.1<x1<0.45, 0.2<y1<0.4.

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canceled

canceled

A display, signage, or lighting system comprising a plurality of light-emitting diodes (LEDs), wherein each LED comprises: an active layer comprising: one or more multilayer potential barriers; and at least one well layer; wherein each multilayer potential barrier comprises: interlacing first and second InAlGaN thin layers; wherein the first and second InAlGaN thin layers have compositions selected with respect to the well layer such that a polarization effect is substantially reduced; wherein the first thin layers are Al 1 jIny 1 GaiXiy 1 N layers with 0<x1<1, 0<yl<l, xl + yl<l 0.1<x1<0.45, 0.2<yl<0.4, the second thin layers are A lx2Iny 2 Ga i-x2-y 2 N layers with Ox2<1, 0<y2<1, x2 + y2<1 0<x2<0.2, 0.05<y2<0.4, wherein x l x2, yl y2; wherein the second thin layers are formed to have gradually lower well depth toward the well layer on one side of the well layer, and gradually lower well depth away from the well layer on another side of the well layer; wherein the first InAlGaN thin layers each has gradual composition variations therein such that each of the first InAlGaN thin layers has a nonrectangular-shaped barrier structure; and wherein the multiplayer multilayer potential barriers and the at least one well layer have their lattice constants substantially matched.

A light-emitting diode (LED) comprising: an active layer comprising: one or more multilayer potential barriers; and at least one well layer; wherein each multilayer potential barrier comprises: interlacing first and second InAlGaN thin layers; wherein the first and second InAlGaN thin layers have compositions selected with respect to the well layer such that a polarization effect is substantially reduced; wherein the first InA l GaN thin layers each has gradual composition variations therein such that each of the first InAlGaN thin layers has a non-rectangular-shaped barrier structure; [[and]] wherein the multiplayer multilayer potential barriers and the at least one well layer have their lattice constants substantially matched; and wherein the first thin layers are Al x Iny 1 _aiXi., 1 N layers with 0.1<x1<0.45, 0.2<y1<0.4.

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canceled

canceled

A display, signage, or lighting system comprising a plurality of light-emitting diodes (LEDs), wherein each LED comprises: an active layer comprising: one or more multilayer potential barriers; and at least one well layer; wherein each multilayer potential barrier comprises: interlacing first and second InAlGaN thin layers; wherein the first and second InAlGaN thin layers have compositions selected with respect to the well layer such that a polarization effect is substantially reduced; wherein the first thin layers are Al 1 jIny 1 GaiXiy 1 N layers with 0<x1<1, 0<yl<l, xl + yl<l 0.1<x1<0.45, 0.2<yl<0.4, the second thin layers are A lx2Iny 2 Ga i-x2-y 2 N layers with Ox2<1, 0<y2<1, x2 + y2<1 0<x2<0.2, 0.05<y2<0.4, wherein x l x2, yl y2; wherein the second thin layers are formed to have gradually lower well depth toward the well layer on one side of the well layer, and gradually lower well depth away from the well layer on another side of the well layer; wherein the first InAlGaN thin layers each has gradual composition variations therein such that each of the first InAlGaN thin layers has a nonrectangular-shaped barrier structure; and wherein the multiplayer multilayer potential barriers and the at least one well layer have their lattice constants substantially matched.

A light-emitting diode (LED) comprising: an active layer comprising: one or more multilayer potential barriers; and at least one well layer; wherein each multilayer potential barrier comprises: interlacing first and second InAlGaN thin layers; wherein the first and second InAlGaN thin layers have compositions selected with respect to the well layer such that a polarization effect is substantially reduced; wherein the first InA l GaN thin layers each has gradual composition variations therein such that each of the first InAlGaN thin layers has a non-rectangular-shaped barrier structure; [[and]] wherein the multiplayer multilayer potential barriers and the at least one well layer have their lattice constants substantially matched; and wherein the first thin layers are Al x Iny 1 _aiXi., 1 N layers with 0.1<x1<0.45, 0.2<y1<0.4.

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canceled

canceled

A display, signage, or lighting system comprising a plurality of light-emitting diodes (LEDs), wherein each LED comprises: an active layer comprising: one or more multilayer potential barriers; and at least one well layer; wherein each multilayer potential barrier comprises: interlacing first and second InAlGaN thin layers; wherein the first and second InAlGaN thin layers have compositions selected with respect to the well layer such that a polarization effect is substantially reduced; wherein the first thin layers are Al 1 jIny 1 GaiXiy 1 N layers with 0<x1<1, 0<yl<l, xl + yl<l 0.1<x1<0.45, 0.2<yl<0.4, the second thin layers are A lx2Iny 2 Ga i-x2-y 2 N layers with Ox2<1, 0<y2<1, x2 + y2<1 0<x2<0.2, 0.05<y2<0.4, wherein x l x2, yl y2; wherein the second thin layers are formed to have gradually lower well depth toward the well layer on one side of the well layer, and gradually lower well depth away from the well layer on another side of the well layer; wherein the first InAlGaN thin layers each has gradual composition variations therein such that each of the first InAlGaN thin layers has a nonrectangular-shaped barrier structure; and wherein the multiplayer multilayer potential barriers and the at least one well layer have their lattice constants substantially matched.