Patent
US 10,270,005GRAPHENE LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME
Yong Fan
US
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Patent
Atlas literature
Patent
US 10,270,005Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the complete transparent part 31 corresponds to the region in which the source electrode 14 and the drain electrode 15 on the graphene light emitting …
FIG. 2, in the manufacturing method of the graphene light emitting display of the present disclosure, the following steps are used: Step S 1: A TFT array, and …
FIG. 3, the present embodiment provides a photomask 30 corresponding to the graphene oxide thin film, and graphene oxide under the photomask 30 is irradiated by …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a graphene light emitting display, comprising the following steps: coating evenly a graphene oxide dispersion on a surface of the substrate with a thin film transistor formed thereon to form the graphene oxide thin film; providing a photomask to correspond to the graphene oxide thin film, so that light is radiated to the graphene oxide thin film through the photomask, to form a source electrode, a drain electrode and a graphene quantum dot layer of a graphene light emitting transistor; and forming an insulating layer and a water and oxygen isolating layer sequentially on a surface of a substrate with the graphene light emitting transistor formed thereon; wherein the photomask includes: a complete transparent part corresponding to the region in which the source electrode and the drain electrode are located; a light blocking part corresponding to the region in which the thin film transistor is located; and a semitransparent part corresponding to the region in which the graphene quantum dot layer is located.
The method of claim 1, wherein the light is blue light.
The method of claim 1, wherein a material for the graphene gate is one of a molybdenum-aluminum alloy, an aluminum-silver alloy and a copper-molybdenum-aluminum alloy.
A graphene light emitting display comprising: a substrate; and a plurality of sub pixel units disposed on the substrate, wherein each of the sub pixel units comprises: a driving module formed on the substrate; a switch module formed on the substrate; a gate formed on the substrate; a gate insulating layer formed on the gate; a source electrode formed on the gate insulating layer; a drain electrode formed on the gate insulating layer; and a graphene quantum dot layer connected between the source electrode and the drain electrode, and wherein the switch module is electrically connected to the source electrode, and the driving module is electrically connected to the gate.
The graphene light emitting display of claim 5, wherein the driving module makes the gate have voltage modes including: a first voltage mode, making the graphene quantum dot layer emit red light; a second voltage mode, making the graphene quantum dot layer emit green light; and a third voltage mode, making the graphene quantum dot layer emit blue light.
The graphene light emitting display of claim 5, wherein a material for the graphene gate is one of a molybdenum-aluminum alloy, an aluminum-silver alloy and a copper-molybdenum-aluminum alloy.
The graphene light emitting display of claim 5, further comprising: an insulating layer formed on the graphene quantum dot layer; an oxygen isolating layer formed on the insulating layer; and water between the insulating layer and the oxygen isolating layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene light emitting transistor (manufacturing method)
Materials described outside the worked examples.
graphene oxide dispersion
graphene quantum dot layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1, the complete transparent part 31 corresponds to the region in which the source electrode 14 and the drain electrode 15 on the graphene light emitting …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
gate reflectivity to visible light | >80% % | molybdenum-aluminum alloyaluminum-silver alloycopper-molybdenum-aluminum alloy |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,270,005Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the complete transparent part 31 corresponds to the region in which the source electrode 14 and the drain electrode 15 on the graphene light emitting …
FIG. 2, in the manufacturing method of the graphene light emitting display of the present disclosure, the following steps are used: Step S 1: A TFT array, and …
FIG. 3, the present embodiment provides a photomask 30 corresponding to the graphene oxide thin film, and graphene oxide under the photomask 30 is irradiated by …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a graphene light emitting display, comprising the following steps: coating evenly a graphene oxide dispersion on a surface of the substrate with a thin film transistor formed thereon to form the graphene oxide thin film; providing a photomask to correspond to the graphene oxide thin film, so that light is radiated to the graphene oxide thin film through the photomask, to form a source electrode, a drain electrode and a graphene quantum dot layer of a graphene light emitting transistor; and forming an insulating layer and a water and oxygen isolating layer sequentially on a surface of a substrate with the graphene light emitting transistor formed thereon; wherein the photomask includes: a complete transparent part corresponding to the region in which the source electrode and the drain electrode are located; a light blocking part corresponding to the region in which the thin film transistor is located; and a semitransparent part corresponding to the region in which the graphene quantum dot layer is located.
The method of claim 1, wherein the light is blue light.
The method of claim 1, wherein a material for the graphene gate is one of a molybdenum-aluminum alloy, an aluminum-silver alloy and a copper-molybdenum-aluminum alloy.
A graphene light emitting display comprising: a substrate; and a plurality of sub pixel units disposed on the substrate, wherein each of the sub pixel units comprises: a driving module formed on the substrate; a switch module formed on the substrate; a gate formed on the substrate; a gate insulating layer formed on the gate; a source electrode formed on the gate insulating layer; a drain electrode formed on the gate insulating layer; and a graphene quantum dot layer connected between the source electrode and the drain electrode, and wherein the switch module is electrically connected to the source electrode, and the driving module is electrically connected to the gate.
The graphene light emitting display of claim 5, wherein the driving module makes the gate have voltage modes including: a first voltage mode, making the graphene quantum dot layer emit red light; a second voltage mode, making the graphene quantum dot layer emit green light; and a third voltage mode, making the graphene quantum dot layer emit blue light.
The graphene light emitting display of claim 5, wherein a material for the graphene gate is one of a molybdenum-aluminum alloy, an aluminum-silver alloy and a copper-molybdenum-aluminum alloy.
The graphene light emitting display of claim 5, further comprising: an insulating layer formed on the graphene quantum dot layer; an oxygen isolating layer formed on the insulating layer; and water between the insulating layer and the oxygen isolating layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene light emitting transistor (manufacturing method)
Materials described outside the worked examples.
graphene oxide dispersion
graphene quantum dot layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1, the complete transparent part 31 corresponds to the region in which the source electrode 14 and the drain electrode 15 on the graphene light emitting …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
gate reflectivity to visible light | >80% % | molybdenum-aluminum alloyaluminum-silver alloycopper-molybdenum-aluminum alloy |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,270,005Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the complete transparent part 31 corresponds to the region in which the source electrode 14 and the drain electrode 15 on the graphene light emitting …
FIG. 2, in the manufacturing method of the graphene light emitting display of the present disclosure, the following steps are used: Step S 1: A TFT array, and …
FIG. 3, the present embodiment provides a photomask 30 corresponding to the graphene oxide thin film, and graphene oxide under the photomask 30 is irradiated by …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a graphene light emitting display, comprising the following steps: coating evenly a graphene oxide dispersion on a surface of the substrate with a thin film transistor formed thereon to form the graphene oxide thin film; providing a photomask to correspond to the graphene oxide thin film, so that light is radiated to the graphene oxide thin film through the photomask, to form a source electrode, a drain electrode and a graphene quantum dot layer of a graphene light emitting transistor; and forming an insulating layer and a water and oxygen isolating layer sequentially on a surface of a substrate with the graphene light emitting transistor formed thereon; wherein the photomask includes: a complete transparent part corresponding to the region in which the source electrode and the drain electrode are located; a light blocking part corresponding to the region in which the thin film transistor is located; and a semitransparent part corresponding to the region in which the graphene quantum dot layer is located.
The method of claim 1, wherein the light is blue light.
The method of claim 1, wherein a material for the graphene gate is one of a molybdenum-aluminum alloy, an aluminum-silver alloy and a copper-molybdenum-aluminum alloy.
A graphene light emitting display comprising: a substrate; and a plurality of sub pixel units disposed on the substrate, wherein each of the sub pixel units comprises: a driving module formed on the substrate; a switch module formed on the substrate; a gate formed on the substrate; a gate insulating layer formed on the gate; a source electrode formed on the gate insulating layer; a drain electrode formed on the gate insulating layer; and a graphene quantum dot layer connected between the source electrode and the drain electrode, and wherein the switch module is electrically connected to the source electrode, and the driving module is electrically connected to the gate.
The graphene light emitting display of claim 5, wherein the driving module makes the gate have voltage modes including: a first voltage mode, making the graphene quantum dot layer emit red light; a second voltage mode, making the graphene quantum dot layer emit green light; and a third voltage mode, making the graphene quantum dot layer emit blue light.
The graphene light emitting display of claim 5, wherein a material for the graphene gate is one of a molybdenum-aluminum alloy, an aluminum-silver alloy and a copper-molybdenum-aluminum alloy.
The graphene light emitting display of claim 5, further comprising: an insulating layer formed on the graphene quantum dot layer; an oxygen isolating layer formed on the insulating layer; and water between the insulating layer and the oxygen isolating layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene light emitting transistor (manufacturing method)
Materials described outside the worked examples.
graphene oxide dispersion
graphene quantum dot layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1, the complete transparent part 31 corresponds to the region in which the source electrode 14 and the drain electrode 15 on the graphene light emitting …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
gate reflectivity to visible light | >80% % | molybdenum-aluminum alloyaluminum-silver alloycopper-molybdenum-aluminum alloy |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,270,005Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the complete transparent part 31 corresponds to the region in which the source electrode 14 and the drain electrode 15 on the graphene light emitting …
FIG. 2, in the manufacturing method of the graphene light emitting display of the present disclosure, the following steps are used: Step S 1: A TFT array, and …
FIG. 3, the present embodiment provides a photomask 30 corresponding to the graphene oxide thin film, and graphene oxide under the photomask 30 is irradiated by …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a graphene light emitting display, comprising the following steps: coating evenly a graphene oxide dispersion on a surface of the substrate with a thin film transistor formed thereon to form the graphene oxide thin film; providing a photomask to correspond to the graphene oxide thin film, so that light is radiated to the graphene oxide thin film through the photomask, to form a source electrode, a drain electrode and a graphene quantum dot layer of a graphene light emitting transistor; and forming an insulating layer and a water and oxygen isolating layer sequentially on a surface of a substrate with the graphene light emitting transistor formed thereon; wherein the photomask includes: a complete transparent part corresponding to the region in which the source electrode and the drain electrode are located; a light blocking part corresponding to the region in which the thin film transistor is located; and a semitransparent part corresponding to the region in which the graphene quantum dot layer is located.
The method of claim 1, wherein the light is blue light.
The method of claim 1, wherein a material for the graphene gate is one of a molybdenum-aluminum alloy, an aluminum-silver alloy and a copper-molybdenum-aluminum alloy.
A graphene light emitting display comprising: a substrate; and a plurality of sub pixel units disposed on the substrate, wherein each of the sub pixel units comprises: a driving module formed on the substrate; a switch module formed on the substrate; a gate formed on the substrate; a gate insulating layer formed on the gate; a source electrode formed on the gate insulating layer; a drain electrode formed on the gate insulating layer; and a graphene quantum dot layer connected between the source electrode and the drain electrode, and wherein the switch module is electrically connected to the source electrode, and the driving module is electrically connected to the gate.
The graphene light emitting display of claim 5, wherein the driving module makes the gate have voltage modes including: a first voltage mode, making the graphene quantum dot layer emit red light; a second voltage mode, making the graphene quantum dot layer emit green light; and a third voltage mode, making the graphene quantum dot layer emit blue light.
The graphene light emitting display of claim 5, wherein a material for the graphene gate is one of a molybdenum-aluminum alloy, an aluminum-silver alloy and a copper-molybdenum-aluminum alloy.
The graphene light emitting display of claim 5, further comprising: an insulating layer formed on the graphene quantum dot layer; an oxygen isolating layer formed on the insulating layer; and water between the insulating layer and the oxygen isolating layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene light emitting transistor (manufacturing method)
Materials described outside the worked examples.
graphene oxide dispersion
graphene quantum dot layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1, the complete transparent part 31 corresponds to the region in which the source electrode 14 and the drain electrode 15 on the graphene light emitting …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
gate reflectivity to visible light | >80% % | molybdenum-aluminum alloyaluminum-silver alloycopper-molybdenum-aluminum alloy |
Related documents with shared materials, methods, properties, or citations.
graphene light emitting display
insulating layer
water and oxygen isolating layer
molybdenum-aluminum alloy
aluminum-silver alloy
copper-molybdenum-aluminum alloy
Voltage |
| 0–12 V |
| — |
Voltage | 20–35 V | — |
Voltage | 40–50 V | — |
Thickness | 420–660 nm | — |
graphene light emitting display
insulating layer
water and oxygen isolating layer
molybdenum-aluminum alloy
aluminum-silver alloy
copper-molybdenum-aluminum alloy
Voltage |
| 0–12 V |
| — |
Voltage | 20–35 V | — |
Voltage | 40–50 V | — |
Thickness | 420–660 nm | — |
graphene light emitting display
insulating layer
water and oxygen isolating layer
molybdenum-aluminum alloy
aluminum-silver alloy
copper-molybdenum-aluminum alloy
Voltage |
| 0–12 V |
| — |
Voltage | 20–35 V | — |
Voltage | 40–50 V | — |
Thickness | 420–660 nm | — |
graphene light emitting display
insulating layer
water and oxygen isolating layer
molybdenum-aluminum alloy
aluminum-silver alloy
copper-molybdenum-aluminum alloy
Voltage |
| 0–12 V |
| — |
Voltage | 20–35 V | — |
Voltage | 40–50 V | — |
Thickness | 420–660 nm | — |