Patent
US 12,283,794 B2cubic Gallium Nitride
c-GaN
indium (alloying material)
In
cubic silicon carbide (substrate)
3C-SiC
cubic InGaN
InGaN
FIG. 2. There will be little direct photon absorption into these regions due to their small volume and low density of states. Instead, carriers are captured …
FIG. 2. There will be little direct photon absorption into these regions due to their small volume and low density of states. Instead, carriers are captured …
FIG. 2. There will be little direct photon absorption into these regions due to their small volume and low density of states. Instead, carriers are captured …
FIG. 2. There will be little direct photon absorption into these regions due to their small volume and low density of states. Instead, carriers are captured …
FIG. 3 shows a model of a light emitting diode (LED) device 300 in which low-bandgap strands 104 sandwiched between high-bandgap materials 106 (such as …
FIG. 4 shows a model of a laser diode device 400, again with the quantum wires making up the active light-emitting active region, which again is made of …
FIG. 5. Thus, generally, and as described below in greater detail, 55 Qwires may be formed from an underlying crystal rough- ness, which creates local …
FIG. 7. The potential shows: the full depth 802 of the conduction band from the base of the Qwire to the stacking-fault free Qwell (0.52 eV); the energy …
FIG. 9. Therefore, for rougher QWs, the emission intensity depends less upon temperature, due to a reduced thermionic emission. It is possible that these …
FIG. 10. Thus, advantageously, the intensity of the recombination may be more insensitive to temperature changes, resulting in a temperature-independent …
FIG. 11 shows a graph of calculated hole ground state energies (squares) and 2nd excited hole state energies B₂ (circles) for rectangular quantum wires created …
FIG. 12) show how the emission may only be reduced to around 40% at room temperature. This may be because the other dimen- sion of the Qwire is wide, as the …
FIG. 12) show how the emission may only be reduced to around 40% at room temperature. This may be because the other dimen- sion of the Qwire is wide, as the …
FIG. 12) show how the emission may only be reduced to around 40% at room temperature. This may be because the other dimen- sion of the Qwire is wide, as the …
FIG. 15 shows a graph displaying a photoluminescence (PL) spectrum (solid line), produced at 10 K, of a 6 nm width quantum well, and a corresponding …
FIG. 15 shows a graph displaying a photoluminescence (PL) spectrum (solid line), produced at 10 K, of a 6 nm width quantum well, and a corresponding …
FIG. 16 shows a graph 1600 that displays PL time decays measured at a temperature of 10 K, which provides an insight into the recombination mechanisms …
FIG. 18 described below. For the 2 nm QW, there is a low energy peak centred at 2.67 eV and a high energy peak at 2.86 eV. These energies are higher than the …
FIG. 18 described below. For the 2 nm QW, there is a low energy peak centred at 2.67 eV and a high energy peak at 2.86 eV. These energies are higher than the …
| — |
Thickness | 2–8 nm | — |
Thickness | 2–10 nm | — |
Thickness | 5–20 nm | — |
— | 3.26–3.3 eV | — |
Temperature | 10–300 K | — |
Thickness | 1017–1020 cm | — |
Thickness | 1018–1020 cm | — |
Temperature | ≤ 10 K | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≤ 14 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 14 nm | — |
cubic Gallium Nitride
c-GaN
indium (alloying material)
In
cubic silicon carbide (substrate)
3C-SiC
cubic InGaN
InGaN
FIG. 2. There will be little direct photon absorption into these regions due to their small volume and low density of states. Instead, carriers are captured …
FIG. 2. There will be little direct photon absorption into these regions due to their small volume and low density of states. Instead, carriers are captured …
FIG. 2. There will be little direct photon absorption into these regions due to their small volume and low density of states. Instead, carriers are captured …
FIG. 2. There will be little direct photon absorption into these regions due to their small volume and low density of states. Instead, carriers are captured …
FIG. 3 shows a model of a light emitting diode (LED) device 300 in which low-bandgap strands 104 sandwiched between high-bandgap materials 106 (such as …
FIG. 4 shows a model of a laser diode device 400, again with the quantum wires making up the active light-emitting active region, which again is made of …
FIG. 5. Thus, generally, and as described below in greater detail, 55 Qwires may be formed from an underlying crystal rough- ness, which creates local …
FIG. 7. The potential shows: the full depth 802 of the conduction band from the base of the Qwire to the stacking-fault free Qwell (0.52 eV); the energy …
FIG. 9. Therefore, for rougher QWs, the emission intensity depends less upon temperature, due to a reduced thermionic emission. It is possible that these …
FIG. 10. Thus, advantageously, the intensity of the recombination may be more insensitive to temperature changes, resulting in a temperature-independent …
FIG. 11 shows a graph of calculated hole ground state energies (squares) and 2nd excited hole state energies B₂ (circles) for rectangular quantum wires created …
FIG. 12) show how the emission may only be reduced to around 40% at room temperature. This may be because the other dimen- sion of the Qwire is wide, as the …
FIG. 12) show how the emission may only be reduced to around 40% at room temperature. This may be because the other dimen- sion of the Qwire is wide, as the …
FIG. 12) show how the emission may only be reduced to around 40% at room temperature. This may be because the other dimen- sion of the Qwire is wide, as the …
FIG. 15 shows a graph displaying a photoluminescence (PL) spectrum (solid line), produced at 10 K, of a 6 nm width quantum well, and a corresponding …
FIG. 15 shows a graph displaying a photoluminescence (PL) spectrum (solid line), produced at 10 K, of a 6 nm width quantum well, and a corresponding …
FIG. 16 shows a graph 1600 that displays PL time decays measured at a temperature of 10 K, which provides an insight into the recombination mechanisms …
FIG. 18 described below. For the 2 nm QW, there is a low energy peak centred at 2.67 eV and a high energy peak at 2.86 eV. These energies are higher than the …
FIG. 18 described below. For the 2 nm QW, there is a low energy peak centred at 2.67 eV and a high energy peak at 2.86 eV. These energies are higher than the …
| — |
Thickness | 2–8 nm | — |
Thickness | 2–10 nm | — |
Thickness | 5–20 nm | — |
— | 3.26–3.3 eV | — |
Temperature | 10–300 K | — |
Thickness | 1017–1020 cm | — |
Thickness | 1018–1020 cm | — |
Temperature | ≤ 10 K | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≤ 14 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 14 nm | — |
cubic Gallium Nitride
c-GaN
indium (alloying material)
In
cubic silicon carbide (substrate)
3C-SiC
cubic InGaN
InGaN
FIG. 2. There will be little direct photon absorption into these regions due to their small volume and low density of states. Instead, carriers are captured …
FIG. 2. There will be little direct photon absorption into these regions due to their small volume and low density of states. Instead, carriers are captured …
FIG. 2. There will be little direct photon absorption into these regions due to their small volume and low density of states. Instead, carriers are captured …
FIG. 2. There will be little direct photon absorption into these regions due to their small volume and low density of states. Instead, carriers are captured …
FIG. 3 shows a model of a light emitting diode (LED) device 300 in which low-bandgap strands 104 sandwiched between high-bandgap materials 106 (such as …
FIG. 4 shows a model of a laser diode device 400, again with the quantum wires making up the active light-emitting active region, which again is made of …
FIG. 5. Thus, generally, and as described below in greater detail, 55 Qwires may be formed from an underlying crystal rough- ness, which creates local …
FIG. 7. The potential shows: the full depth 802 of the conduction band from the base of the Qwire to the stacking-fault free Qwell (0.52 eV); the energy …
FIG. 9. Therefore, for rougher QWs, the emission intensity depends less upon temperature, due to a reduced thermionic emission. It is possible that these …
FIG. 10. Thus, advantageously, the intensity of the recombination may be more insensitive to temperature changes, resulting in a temperature-independent …
FIG. 11 shows a graph of calculated hole ground state energies (squares) and 2nd excited hole state energies B₂ (circles) for rectangular quantum wires created …
FIG. 12) show how the emission may only be reduced to around 40% at room temperature. This may be because the other dimen- sion of the Qwire is wide, as the …
FIG. 12) show how the emission may only be reduced to around 40% at room temperature. This may be because the other dimen- sion of the Qwire is wide, as the …
FIG. 12) show how the emission may only be reduced to around 40% at room temperature. This may be because the other dimen- sion of the Qwire is wide, as the …
FIG. 15 shows a graph displaying a photoluminescence (PL) spectrum (solid line), produced at 10 K, of a 6 nm width quantum well, and a corresponding …
FIG. 15 shows a graph displaying a photoluminescence (PL) spectrum (solid line), produced at 10 K, of a 6 nm width quantum well, and a corresponding …
FIG. 16 shows a graph 1600 that displays PL time decays measured at a temperature of 10 K, which provides an insight into the recombination mechanisms …
FIG. 18 described below. For the 2 nm QW, there is a low energy peak centred at 2.67 eV and a high energy peak at 2.86 eV. These energies are higher than the …
FIG. 18 described below. For the 2 nm QW, there is a low energy peak centred at 2.67 eV and a high energy peak at 2.86 eV. These energies are higher than the …
| — |
Thickness | 2–8 nm | — |
Thickness | 2–10 nm | — |
Thickness | 5–20 nm | — |
— | 3.26–3.3 eV | — |
Temperature | 10–300 K | — |
Thickness | 1017–1020 cm | — |
Thickness | 1018–1020 cm | — |
Temperature | ≤ 10 K | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≤ 14 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 14 nm | — |
cubic Gallium Nitride
c-GaN
indium (alloying material)
In
cubic silicon carbide (substrate)
3C-SiC
cubic InGaN
InGaN
FIG. 2. There will be little direct photon absorption into these regions due to their small volume and low density of states. Instead, carriers are captured …
FIG. 2. There will be little direct photon absorption into these regions due to their small volume and low density of states. Instead, carriers are captured …
FIG. 2. There will be little direct photon absorption into these regions due to their small volume and low density of states. Instead, carriers are captured …
FIG. 2. There will be little direct photon absorption into these regions due to their small volume and low density of states. Instead, carriers are captured …
FIG. 3 shows a model of a light emitting diode (LED) device 300 in which low-bandgap strands 104 sandwiched between high-bandgap materials 106 (such as …
FIG. 4 shows a model of a laser diode device 400, again with the quantum wires making up the active light-emitting active region, which again is made of …
FIG. 5. Thus, generally, and as described below in greater detail, 55 Qwires may be formed from an underlying crystal rough- ness, which creates local …
FIG. 7. The potential shows: the full depth 802 of the conduction band from the base of the Qwire to the stacking-fault free Qwell (0.52 eV); the energy …
FIG. 9. Therefore, for rougher QWs, the emission intensity depends less upon temperature, due to a reduced thermionic emission. It is possible that these …
FIG. 10. Thus, advantageously, the intensity of the recombination may be more insensitive to temperature changes, resulting in a temperature-independent …
FIG. 11 shows a graph of calculated hole ground state energies (squares) and 2nd excited hole state energies B₂ (circles) for rectangular quantum wires created …
FIG. 12) show how the emission may only be reduced to around 40% at room temperature. This may be because the other dimen- sion of the Qwire is wide, as the …
FIG. 12) show how the emission may only be reduced to around 40% at room temperature. This may be because the other dimen- sion of the Qwire is wide, as the …
FIG. 12) show how the emission may only be reduced to around 40% at room temperature. This may be because the other dimen- sion of the Qwire is wide, as the …
FIG. 15 shows a graph displaying a photoluminescence (PL) spectrum (solid line), produced at 10 K, of a 6 nm width quantum well, and a corresponding …
FIG. 15 shows a graph displaying a photoluminescence (PL) spectrum (solid line), produced at 10 K, of a 6 nm width quantum well, and a corresponding …
FIG. 16 shows a graph 1600 that displays PL time decays measured at a temperature of 10 K, which provides an insight into the recombination mechanisms …
FIG. 18 described below. For the 2 nm QW, there is a low energy peak centred at 2.67 eV and a high energy peak at 2.86 eV. These energies are higher than the …
FIG. 18 described below. For the 2 nm QW, there is a low energy peak centred at 2.67 eV and a high energy peak at 2.86 eV. These energies are higher than the …
| — |
Thickness | 2–8 nm | — |
Thickness | 2–10 nm | — |
Thickness | 5–20 nm | — |
— | 3.26–3.3 eV | — |
Temperature | 10–300 K | — |
Thickness | 1017–1020 cm | — |
Thickness | 1018–1020 cm | — |
Temperature | ≤ 10 K | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≤ 14 nm | — |
Thickness | ≥ 2 nm | — |
Thickness | ≥ 14 nm | — |