LAYERED GAN AND GAN NANOSHEET, AND ELECTRICAL DEVICE USING THE SAME

Woo-young Shim; Jong-bum Won

Patent

Atlas literature

Patent

US 11,840,458 B2

LAYERED GAN AND GAN NANOSHEET, AND ELECTRICAL DEVICE USING THE SAME

Woo-young Shim, Jong-bum Won

Industry-Academic Cooperation Foundation, Yonsei University, Seoul (KR)·Dec. 12, 2023·US

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 is a conceptual view illustrating a layered com- pound according to an embodiment of the invention and a nanosheet prepared using the same;

FIG. 2

performance graph

FIG. 2 is a graph illustrating results of XRD diffraction patterns of samples according to an embodiment of the invention;

FIG. 3

performance graph

FIG. 3 is a graph illustrating results of Fourier-transform infrared spectroscopy (FT-IR) analysis of samples according to an embodiment of the invention;

FIG. 4

performance graph

FIG. 4 is a graph illustrating results of X-ray photoelec- tron spectroscopy (XPS) analysis of samples according to an embodiment of the invention;

FIG. 5

FIG. 5 is a scanning electron microscopy (SEM) image of samples according to an embodiment of the invention;

FIG. 6

FIG. 6 is an image illustrating results of scanning trans- mission electron microscopy (STEM) and energy dispersive spectroscopy (EDS) analysis according to an …

FIG. 7

FIG. 7 is an image illustrating results of scanning trans- mission electron microscopy (STEM) and focused ion beam (FIB) analysis according to an embodiment of …

FIG. 8

FIG. 8 is an image illustrating results of transmission electron microscope (TEM) analysis of samples according to an embodiment of the invention;

FIG. 9

performance graph

FIG. 9 is a graph illustrating results of scanning tunneling spectroscopy (STS) analysis of samples according to an embodiment of the invention;

FIG. 10

performance graph

FIG. 10 is a graph illustrating photoluminescence prop- erties in photoluminescence analysis of samples according to an embodiment of the invention;

FIG. 11

FIG. 11 is an image illustrating results of photolumines- cence mapping analysis of samples according to an embodi- ment of the invention;

FIG. 12

FIG. 12 is an image illustrating results of piezoelectric force microscopy (PFM) mapping of samples according to an embodiment of the invention;

FIG. 13

performance graph

FIG. 13 is a graph illustrating results of measuring hys- teresis curves of samples according to an embodiment of the invention;

FIG. 14

performance graph

FIG. 14 is a graph illustrating results of measuring hys- teresis curves and a coercive electric ﬁeld according to a thickness of samples according to an …

FIG. 15

performance graph

FIG. 15 is a graph of voltage-current properties of samples according to an embodiment of the invention.

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 13 dependent

1
IndependentM₁-xGayNz
A layered compound having a two-dimensional layered structure represented by Formula 1 below: M₁-xGayNz [Formula 1] (M is at least one of Group II elements, and 0.25≤x≤0.8, 0.6≤y≤1.25, and 0.75≤z≤1.5), wherein the M is positioned between GayNz layers such that the GayNz layers are interlayer-bonded by the M.
1. 2
  Dependent← claim 1Ca₁-xGayNz
  The layered compound according to claim 1, wherein the M is Ca.
2. 3
  Dependent← claim 1M₁-xHaGayNz
  The layered compound according to claim 1, wherein the layered compound is represented by Formula 2 below: M₁-xHaGayNz [Formula 2] (M is at least one of Group II elements, and 0.25≤x≤0.8, 0.6≤y≤1.25, 0<a≤x, and 0.75≤z≤1.5).
3. 4
  Dependent← claim 1M₁-xGayNz
  The layered compound according to claim 1, wherein, in XRD measurement using CuKα rays, the layered compound has a group of peaks at the positions of 2θ=11.7°±0.50°, 34.5°±0.50°, 35.5°±0.50°, 43.9°±0.50°, and 51.1°±0.50°, the peaks having an intensity of 3% or greater with respect to a peak from the group of peaks having the greatest intensity.
4. 5
  Dependent← claim 1M₁-xGayNz
  The layered compound according to claim 1, wherein, in XRD measurement using CuKα rays, the layered compound has a I(110)/I(001) value of 2.0 or less which is a peak intensity of a (110) plane to a peak intensity of a (001) plane.
5. 8
  Dependent← claim 1M₁-xGayNz
  The layered compound according to claim 1, wherein the layered compound exhibits resistance switch-ing properties.
6. 9
  Dependent← claim 1M₁-xGayNz
  The layered compound according to claim 1, wherein the layered compound exhibits luminescence properties in photoluminescence analysis.
7. 10
  Dependent← claim 1M₁-xGayNz
  The layered compound according to claim 1, wherein the layered compound has an energy band gap of 0.1 eV to 2.5 eV.
8. 15
  Dependent← claim 1, claim 11M₁-xGayNzelectrical device (memristor)
  The nanosheet according to claim 11, wherein the nanosheet has a thickness of 500 nm or less. 16.An electrical device comprising the layered compound according to claim 1. ∗ ∗ ∗ ∗ ∗
11
IndependentM₁-xGayNzM₁-xGayNz
A nanosheet comprising a compound having a two-dimensional layered structure represented by Formula 1 below, and prepared through a physical or chemical peeling method: M₁-xGayNz [Formula 1] (M is at least one of Group II elements, and 0.25≤x≤0.8, 0.6≤y≤1.25, and 0.75≤z≤1.5), wherein the M is positioned between GayNz layers such that the GayNz layers are interlayer-bonded by the M.
1. 12
  Dependent← claim 11M₁-xGayNz
  The nanosheet according to claim 11, wherein the compound exhibits resistance switching properties.
2. 13
  Dependent← claim 11M₁-xGayNz
  The nanosheet according to claim 11, wherein the compound exhibits luminescence properties in photoluminescence analysis. 11 12
3. 14
  Dependent← claim 11M₁-xGayNz
  The nanosheet according to claim 11, wherein the compound has an energy band gap of 0.1 eV to 2.5 eV.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

electrical device (memristor)

M₁-xGayNzactive material

Materials

Materials described outside the worked examples.

layered M₁-xGayNz compound

M₁-xGayNz

Claimed Layered Compound

Claimed Nanosheet

Ca-containing layered GaN compound

Ca₁-xGayNz

Claimed Layered Compound Ca Specific

Process steps

Additional fabrication and treatment steps described in the patent.

Chemical Etching Delamination

Step 1

Process details

method:physical or chemical peeling

etchant:strong acid such as nitric acid or hydrochloric acid

description:Removal of Group II additive elements (M) from layered MGayNz compound using strong acid to weaken interlayer bonding and enable delamination into nanosheets; hydrogen ions from acid replace removed additive elements

Materials:

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

xrd

XRD

FIG. 2 is a graph illustrating results of XRD diffraction patterns of samples according to an embodiment of the invention;

Figure references

FIG. 2

device performance measurement

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
XRD peaks of layered M1-xGayNz compound	—	M₁-xGayNz
XRD I(110)/I(001) ratio of layered M1-xGayNz compound	—

Cited prior art

Patents and literature cited by this patent (applicant and examiner references).

Cited patents · 1

US 5,633,192 A5,633,192 A * 5/1997 Moustakas.......... H01L 21/0237examiner

Cited non-patent literature · 2

Effects of Hydro. and Anneal. on the Deep Levels in GaN Epilayers Grown on Sapphire Substrates. Kang et al, “Effects of Hydro. and Anneal. on the Deep Levels in GaN Epilayers Grown on Sapphire Substrates,” Jan. 15, 2000, Japan Journal of App. Physics, vol. 39, pp. L25-L27 (Year: 2000).
Electronic properties and atomic structure of Mg-doped multilayer g-GaN base on ﬁrst-principles. Liu et al, “Electronic properties and atomic structure of Mg-doped multilayer g-GaN base on ﬁrst-principles,” Oct. 26, 2020, Elsevier (Applied surface Science), Issue 539, pp. 1-7 (Year: 2020).* Baodan Liu et al., “TemplateApproach to Crystalline GaN Nanosheets”, Nano Letter, Apr. 2017. G. Wang et al., “Growth of GaN single crystals by Ca3N2 ﬂux”, Elsevier, Sep. 22, 2007.

Why these are connected

Related documents with shared materials, methods, properties, or citations.

LAYERED GAN AND GAN NANOSHEET, AND ELECTRICAL DEVICE USING THE SAME | Matter42 Literature