Patent
Atlas literature
Patent
US 11,802,350 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A is a schematic view illustrating a method of preparing layered GaAs according to one exemplary embodiment of the present invention.
FIG. 2C is a graph illustrating XRD analysis results of layered K₂Ga₂As3, layered GaAs having been treated with a mixed solution, layered GaAs having been …
FIG. 3A shows scanning electron microscope (SEM) 15 images of the layered K₂Ga₂As₃ and the layered GaAs obtained therefrom.
FIG. 4B shows images illustrating EDS analysis results of layered GaAs according to one exemplary embodiment of the present invention.
FIG. 5A shows transmission electron microscope (TEM) images, EDS analysis image, EDS mapping, and an ele- ments’ atomic proportion table of a layered GaAs …
FIG. 6A shows images and graphs illustrating atomic force microscope (AFM) results of a GaAs nanosheet obtained from K₂Ga₂As₃ according to one exemplary …
FIG. 7 is X-ray photoelectron spectroscopy analysis results of Na₂Ga₂As₃ and layered GaAs, respectively syn- 45 thesized according to an exemplary embodiment …
FIG. 8 is Raman analysis results of Na₂Ga₂As₃ and layered GaAs obtained from the Na₂Ga₂As3, each of which 50 synthesized according to an exemplary embodiment …
FIGS. 9 and 10 are cross-section STEM images of the layered GaAs obtained from the Na₂Ga₂As3, synthesized according to an exemplary embodiment of the present …
FIG. 11A is an OM (optical microscope) image of layered GaAs obtained from Na₂Ga₂As3.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing layered GaAs, the method comprising: step (1) of heat-treating a mixture including K or Na powder, Ga powder, and As powder and cooling the mixture, thereby obtaining a layered compound having a monoclinic crystal structure with the P₂₁/c space group and represented by the chemical formula K₂Ga₂As₃ or the chemical formula Na₂Ga₂As3; and step (2) of treating the layered compound with a mixed solution containing a salt capable of selectively remov-ing K ions or Na ions contained in the layered com-pound and a solvent capable of dissolving the salt, thereby obtaining layered GaAs having a crystalline or an amorphous structure.
The method of claim 1, wherein the salt is represented by the following Chemical Formula 1: MXa(2≤a≤3) <Chemical Formula 1> wherein, in Chemical Formula 1, M is any one selected among Al, Mg, Zn, Ga, and Mn, and X is any one selected among Cl, Br, and I.
The method of claim 1, wherein the solvent includes at least one selected among water, ethanol, a cyclic carbonate-based solvent, a chain carbonate-based solvent, an ester-based solvent, an ether-based solvent, a nitrile-based sol-vent, and an amide-based solvent.
The method of claim 1, wherein the heat treatment of the step (1) is carried out at 650 to 800° C. for 6 to 24 hours.
The method of claim 1, wherein the cooling of the step (1) is carried out at a cooling rate of 0.5 to 3° C./hour. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
K₂Ga₂As₃
Na₂Ga₂As₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2C is a graph illustrating XRD analysis results of layered K₂Ga₂As3, layered GaAs having been treated with a mixed solution, layered GaAs having been …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Crystal structure of K2Ga2As3 intermediate | monoclinic P₂₁/c | K₂Ga₂As₃ |
Crystal structure of Na2Ga2As3 intermediate | monoclinic P₂₁/c |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
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Patent
Atlas literature
Patent
US 11,802,350 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A is a schematic view illustrating a method of preparing layered GaAs according to one exemplary embodiment of the present invention.
FIG. 2C is a graph illustrating XRD analysis results of layered K₂Ga₂As3, layered GaAs having been treated with a mixed solution, layered GaAs having been …
FIG. 3A shows scanning electron microscope (SEM) 15 images of the layered K₂Ga₂As₃ and the layered GaAs obtained therefrom.
FIG. 4B shows images illustrating EDS analysis results of layered GaAs according to one exemplary embodiment of the present invention.
FIG. 5A shows transmission electron microscope (TEM) images, EDS analysis image, EDS mapping, and an ele- ments’ atomic proportion table of a layered GaAs …
FIG. 6A shows images and graphs illustrating atomic force microscope (AFM) results of a GaAs nanosheet obtained from K₂Ga₂As₃ according to one exemplary …
FIG. 7 is X-ray photoelectron spectroscopy analysis results of Na₂Ga₂As₃ and layered GaAs, respectively syn- 45 thesized according to an exemplary embodiment …
FIG. 8 is Raman analysis results of Na₂Ga₂As₃ and layered GaAs obtained from the Na₂Ga₂As3, each of which 50 synthesized according to an exemplary embodiment …
FIGS. 9 and 10 are cross-section STEM images of the layered GaAs obtained from the Na₂Ga₂As3, synthesized according to an exemplary embodiment of the present …
FIG. 11A is an OM (optical microscope) image of layered GaAs obtained from Na₂Ga₂As3.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing layered GaAs, the method comprising: step (1) of heat-treating a mixture including K or Na powder, Ga powder, and As powder and cooling the mixture, thereby obtaining a layered compound having a monoclinic crystal structure with the P₂₁/c space group and represented by the chemical formula K₂Ga₂As₃ or the chemical formula Na₂Ga₂As3; and step (2) of treating the layered compound with a mixed solution containing a salt capable of selectively remov-ing K ions or Na ions contained in the layered com-pound and a solvent capable of dissolving the salt, thereby obtaining layered GaAs having a crystalline or an amorphous structure.
The method of claim 1, wherein the salt is represented by the following Chemical Formula 1: MXa(2≤a≤3) <Chemical Formula 1> wherein, in Chemical Formula 1, M is any one selected among Al, Mg, Zn, Ga, and Mn, and X is any one selected among Cl, Br, and I.
The method of claim 1, wherein the solvent includes at least one selected among water, ethanol, a cyclic carbonate-based solvent, a chain carbonate-based solvent, an ester-based solvent, an ether-based solvent, a nitrile-based sol-vent, and an amide-based solvent.
The method of claim 1, wherein the heat treatment of the step (1) is carried out at 650 to 800° C. for 6 to 24 hours.
The method of claim 1, wherein the cooling of the step (1) is carried out at a cooling rate of 0.5 to 3° C./hour. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
K₂Ga₂As₃
Na₂Ga₂As₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2C is a graph illustrating XRD analysis results of layered K₂Ga₂As3, layered GaAs having been treated with a mixed solution, layered GaAs having been …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Crystal structure of K2Ga2As3 intermediate | monoclinic P₂₁/c | K₂Ga₂As₃ |
Crystal structure of Na2Ga2As3 intermediate | monoclinic P₂₁/c |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
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Patent
Atlas literature
Patent
US 11,802,350 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A is a schematic view illustrating a method of preparing layered GaAs according to one exemplary embodiment of the present invention.
FIG. 2C is a graph illustrating XRD analysis results of layered K₂Ga₂As3, layered GaAs having been treated with a mixed solution, layered GaAs having been …
FIG. 3A shows scanning electron microscope (SEM) 15 images of the layered K₂Ga₂As₃ and the layered GaAs obtained therefrom.
FIG. 4B shows images illustrating EDS analysis results of layered GaAs according to one exemplary embodiment of the present invention.
FIG. 5A shows transmission electron microscope (TEM) images, EDS analysis image, EDS mapping, and an ele- ments’ atomic proportion table of a layered GaAs …
FIG. 6A shows images and graphs illustrating atomic force microscope (AFM) results of a GaAs nanosheet obtained from K₂Ga₂As₃ according to one exemplary …
FIG. 7 is X-ray photoelectron spectroscopy analysis results of Na₂Ga₂As₃ and layered GaAs, respectively syn- 45 thesized according to an exemplary embodiment …
FIG. 8 is Raman analysis results of Na₂Ga₂As₃ and layered GaAs obtained from the Na₂Ga₂As3, each of which 50 synthesized according to an exemplary embodiment …
FIGS. 9 and 10 are cross-section STEM images of the layered GaAs obtained from the Na₂Ga₂As3, synthesized according to an exemplary embodiment of the present …
FIG. 11A is an OM (optical microscope) image of layered GaAs obtained from Na₂Ga₂As3.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing layered GaAs, the method comprising: step (1) of heat-treating a mixture including K or Na powder, Ga powder, and As powder and cooling the mixture, thereby obtaining a layered compound having a monoclinic crystal structure with the P₂₁/c space group and represented by the chemical formula K₂Ga₂As₃ or the chemical formula Na₂Ga₂As3; and step (2) of treating the layered compound with a mixed solution containing a salt capable of selectively remov-ing K ions or Na ions contained in the layered com-pound and a solvent capable of dissolving the salt, thereby obtaining layered GaAs having a crystalline or an amorphous structure.
The method of claim 1, wherein the salt is represented by the following Chemical Formula 1: MXa(2≤a≤3) <Chemical Formula 1> wherein, in Chemical Formula 1, M is any one selected among Al, Mg, Zn, Ga, and Mn, and X is any one selected among Cl, Br, and I.
The method of claim 1, wherein the solvent includes at least one selected among water, ethanol, a cyclic carbonate-based solvent, a chain carbonate-based solvent, an ester-based solvent, an ether-based solvent, a nitrile-based sol-vent, and an amide-based solvent.
The method of claim 1, wherein the heat treatment of the step (1) is carried out at 650 to 800° C. for 6 to 24 hours.
The method of claim 1, wherein the cooling of the step (1) is carried out at a cooling rate of 0.5 to 3° C./hour. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
K₂Ga₂As₃
Na₂Ga₂As₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2C is a graph illustrating XRD analysis results of layered K₂Ga₂As3, layered GaAs having been treated with a mixed solution, layered GaAs having been …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Crystal structure of K2Ga2As3 intermediate | monoclinic P₂₁/c | K₂Ga₂As₃ |
Crystal structure of Na2Ga2As3 intermediate | monoclinic P₂₁/c |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,802,350 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A is a schematic view illustrating a method of preparing layered GaAs according to one exemplary embodiment of the present invention.
FIG. 2C is a graph illustrating XRD analysis results of layered K₂Ga₂As3, layered GaAs having been treated with a mixed solution, layered GaAs having been …
FIG. 3A shows scanning electron microscope (SEM) 15 images of the layered K₂Ga₂As₃ and the layered GaAs obtained therefrom.
FIG. 4B shows images illustrating EDS analysis results of layered GaAs according to one exemplary embodiment of the present invention.
FIG. 5A shows transmission electron microscope (TEM) images, EDS analysis image, EDS mapping, and an ele- ments’ atomic proportion table of a layered GaAs …
FIG. 6A shows images and graphs illustrating atomic force microscope (AFM) results of a GaAs nanosheet obtained from K₂Ga₂As₃ according to one exemplary …
FIG. 7 is X-ray photoelectron spectroscopy analysis results of Na₂Ga₂As₃ and layered GaAs, respectively syn- 45 thesized according to an exemplary embodiment …
FIG. 8 is Raman analysis results of Na₂Ga₂As₃ and layered GaAs obtained from the Na₂Ga₂As3, each of which 50 synthesized according to an exemplary embodiment …
FIGS. 9 and 10 are cross-section STEM images of the layered GaAs obtained from the Na₂Ga₂As3, synthesized according to an exemplary embodiment of the present …
FIG. 11A is an OM (optical microscope) image of layered GaAs obtained from Na₂Ga₂As3.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing layered GaAs, the method comprising: step (1) of heat-treating a mixture including K or Na powder, Ga powder, and As powder and cooling the mixture, thereby obtaining a layered compound having a monoclinic crystal structure with the P₂₁/c space group and represented by the chemical formula K₂Ga₂As₃ or the chemical formula Na₂Ga₂As3; and step (2) of treating the layered compound with a mixed solution containing a salt capable of selectively remov-ing K ions or Na ions contained in the layered com-pound and a solvent capable of dissolving the salt, thereby obtaining layered GaAs having a crystalline or an amorphous structure.
The method of claim 1, wherein the salt is represented by the following Chemical Formula 1: MXa(2≤a≤3) <Chemical Formula 1> wherein, in Chemical Formula 1, M is any one selected among Al, Mg, Zn, Ga, and Mn, and X is any one selected among Cl, Br, and I.
The method of claim 1, wherein the solvent includes at least one selected among water, ethanol, a cyclic carbonate-based solvent, a chain carbonate-based solvent, an ester-based solvent, an ether-based solvent, a nitrile-based sol-vent, and an amide-based solvent.
The method of claim 1, wherein the heat treatment of the step (1) is carried out at 650 to 800° C. for 6 to 24 hours.
The method of claim 1, wherein the cooling of the step (1) is carried out at a cooling rate of 0.5 to 3° C./hour. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
K₂Ga₂As₃
Na₂Ga₂As₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2C is a graph illustrating XRD analysis results of layered K₂Ga₂As3, layered GaAs having been treated with a mixed solution, layered GaAs having been …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Crystal structure of K2Ga2As3 intermediate | monoclinic P₂₁/c | K₂Ga₂As₃ |
Crystal structure of Na2Ga2As3 intermediate | monoclinic P₂₁/c |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
layered GaAs (crystalline)
GaAs
K or Na powder, Ga powder, As powder precursor mixture
salt MXa (2≤a≤3); M=Al, Mg, Zn, Ga, or Mn; X=Cl, Br, or I
MXa
FIG. 2C is a graph illustrating XRD analysis results of layered K₂Ga₂As3, layered GaAs having been treated with a mixed solution, layered GaAs having been …
FIG. 3A shows scanning electron microscope (SEM) 15 images of the layered K₂Ga₂As₃ and the layered GaAs obtained therefrom.
FIG. 3A shows scanning electron microscope (SEM) 15 images of the layered K₂Ga₂As₃ and the layered GaAs obtained therefrom.
FIG. 5A shows transmission electron microscope (TEM) images, EDS analysis image, EDS mapping, and an ele- ments’ atomic proportion table of a layered GaAs …
FIG. 6A shows images and graphs illustrating atomic force microscope (AFM) results of a GaAs nanosheet obtained from K₂Ga₂As₃ according to one exemplary …
FIG. 7 is X-ray photoelectron spectroscopy analysis results of Na₂Ga₂As₃ and layered GaAs, respectively syn- 45 thesized according to an exemplary embodiment …
FIG. 8 is Raman analysis results of Na₂Ga₂As₃ and layered GaAs obtained from the Na₂Ga₂As3, each of which 50 synthesized according to an exemplary embodiment …
FIGS. 9 and 10 are cross-section STEM images of the layered GaAs obtained from the Na₂Ga₂As3, synthesized according to an exemplary embodiment of the present …
FIG. 11A is an OM (optical microscope) image of layered GaAs obtained from Na₂Ga₂As3.
Absent XRD peaks (bulk GaAs) in layered GaAs product — 2θ positions not produced | no peaks at 26.9±0.2, 44.6±0.2, 52.8±0.2, 64.9±0.2, 71.5±0.2 deg | GaAs |
Temperature | 0.5–3 °C | — |
Temperature | 650–800 °C | — |
Duration | 6–24 hours | — |
Temperature | 20–60 °C | — |
Temperature | ≤ 650 °C | — |
Temperature | ≤ 0.5 °C | — |
Temperature | ≤ 20 °C | — |
Temperature | ≥ 800 °C | — |
Duration | ≥ 24 hours | — |
Temperature | ≥ 60 °C | — |
Cited non-patent literature · 2
layered GaAs (crystalline)
GaAs
K or Na powder, Ga powder, As powder precursor mixture
salt MXa (2≤a≤3); M=Al, Mg, Zn, Ga, or Mn; X=Cl, Br, or I
MXa
FIG. 2C is a graph illustrating XRD analysis results of layered K₂Ga₂As3, layered GaAs having been treated with a mixed solution, layered GaAs having been …
FIG. 3A shows scanning electron microscope (SEM) 15 images of the layered K₂Ga₂As₃ and the layered GaAs obtained therefrom.
FIG. 3A shows scanning electron microscope (SEM) 15 images of the layered K₂Ga₂As₃ and the layered GaAs obtained therefrom.
FIG. 5A shows transmission electron microscope (TEM) images, EDS analysis image, EDS mapping, and an ele- ments’ atomic proportion table of a layered GaAs …
FIG. 6A shows images and graphs illustrating atomic force microscope (AFM) results of a GaAs nanosheet obtained from K₂Ga₂As₃ according to one exemplary …
FIG. 7 is X-ray photoelectron spectroscopy analysis results of Na₂Ga₂As₃ and layered GaAs, respectively syn- 45 thesized according to an exemplary embodiment …
FIG. 8 is Raman analysis results of Na₂Ga₂As₃ and layered GaAs obtained from the Na₂Ga₂As3, each of which 50 synthesized according to an exemplary embodiment …
FIGS. 9 and 10 are cross-section STEM images of the layered GaAs obtained from the Na₂Ga₂As3, synthesized according to an exemplary embodiment of the present …
FIG. 11A is an OM (optical microscope) image of layered GaAs obtained from Na₂Ga₂As3.
Absent XRD peaks (bulk GaAs) in layered GaAs product — 2θ positions not produced | no peaks at 26.9±0.2, 44.6±0.2, 52.8±0.2, 64.9±0.2, 71.5±0.2 deg | GaAs |
Temperature | 0.5–3 °C | — |
Temperature | 650–800 °C | — |
Duration | 6–24 hours | — |
Temperature | 20–60 °C | — |
Temperature | ≤ 650 °C | — |
Temperature | ≤ 0.5 °C | — |
Temperature | ≤ 20 °C | — |
Temperature | ≥ 800 °C | — |
Duration | ≥ 24 hours | — |
Temperature | ≥ 60 °C | — |
Cited non-patent literature · 2
layered GaAs (crystalline)
GaAs
K or Na powder, Ga powder, As powder precursor mixture
salt MXa (2≤a≤3); M=Al, Mg, Zn, Ga, or Mn; X=Cl, Br, or I
MXa
FIG. 2C is a graph illustrating XRD analysis results of layered K₂Ga₂As3, layered GaAs having been treated with a mixed solution, layered GaAs having been …
FIG. 3A shows scanning electron microscope (SEM) 15 images of the layered K₂Ga₂As₃ and the layered GaAs obtained therefrom.
FIG. 3A shows scanning electron microscope (SEM) 15 images of the layered K₂Ga₂As₃ and the layered GaAs obtained therefrom.
FIG. 5A shows transmission electron microscope (TEM) images, EDS analysis image, EDS mapping, and an ele- ments’ atomic proportion table of a layered GaAs …
FIG. 6A shows images and graphs illustrating atomic force microscope (AFM) results of a GaAs nanosheet obtained from K₂Ga₂As₃ according to one exemplary …
FIG. 7 is X-ray photoelectron spectroscopy analysis results of Na₂Ga₂As₃ and layered GaAs, respectively syn- 45 thesized according to an exemplary embodiment …
FIG. 8 is Raman analysis results of Na₂Ga₂As₃ and layered GaAs obtained from the Na₂Ga₂As3, each of which 50 synthesized according to an exemplary embodiment …
FIGS. 9 and 10 are cross-section STEM images of the layered GaAs obtained from the Na₂Ga₂As3, synthesized according to an exemplary embodiment of the present …
FIG. 11A is an OM (optical microscope) image of layered GaAs obtained from Na₂Ga₂As3.
Absent XRD peaks (bulk GaAs) in layered GaAs product — 2θ positions not produced | no peaks at 26.9±0.2, 44.6±0.2, 52.8±0.2, 64.9±0.2, 71.5±0.2 deg | GaAs |
Temperature | 0.5–3 °C | — |
Temperature | 650–800 °C | — |
Duration | 6–24 hours | — |
Temperature | 20–60 °C | — |
Temperature | ≤ 650 °C | — |
Temperature | ≤ 0.5 °C | — |
Temperature | ≤ 20 °C | — |
Temperature | ≥ 800 °C | — |
Duration | ≥ 24 hours | — |
Temperature | ≥ 60 °C | — |
Cited non-patent literature · 2
layered GaAs (crystalline)
GaAs
K or Na powder, Ga powder, As powder precursor mixture
salt MXa (2≤a≤3); M=Al, Mg, Zn, Ga, or Mn; X=Cl, Br, or I
MXa
FIG. 2C is a graph illustrating XRD analysis results of layered K₂Ga₂As3, layered GaAs having been treated with a mixed solution, layered GaAs having been …
FIG. 3A shows scanning electron microscope (SEM) 15 images of the layered K₂Ga₂As₃ and the layered GaAs obtained therefrom.
FIG. 3A shows scanning electron microscope (SEM) 15 images of the layered K₂Ga₂As₃ and the layered GaAs obtained therefrom.
FIG. 5A shows transmission electron microscope (TEM) images, EDS analysis image, EDS mapping, and an ele- ments’ atomic proportion table of a layered GaAs …
FIG. 6A shows images and graphs illustrating atomic force microscope (AFM) results of a GaAs nanosheet obtained from K₂Ga₂As₃ according to one exemplary …
FIG. 7 is X-ray photoelectron spectroscopy analysis results of Na₂Ga₂As₃ and layered GaAs, respectively syn- 45 thesized according to an exemplary embodiment …
FIG. 8 is Raman analysis results of Na₂Ga₂As₃ and layered GaAs obtained from the Na₂Ga₂As3, each of which 50 synthesized according to an exemplary embodiment …
FIGS. 9 and 10 are cross-section STEM images of the layered GaAs obtained from the Na₂Ga₂As3, synthesized according to an exemplary embodiment of the present …
FIG. 11A is an OM (optical microscope) image of layered GaAs obtained from Na₂Ga₂As3.
Absent XRD peaks (bulk GaAs) in layered GaAs product — 2θ positions not produced | no peaks at 26.9±0.2, 44.6±0.2, 52.8±0.2, 64.9±0.2, 71.5±0.2 deg | GaAs |
Temperature | 0.5–3 °C | — |
Temperature | 650–800 °C | — |
Duration | 6–24 hours | — |
Temperature | 20–60 °C | — |
Temperature | ≤ 650 °C | — |
Temperature | ≤ 0.5 °C | — |
Temperature | ≤ 20 °C | — |
Temperature | ≥ 800 °C | — |
Duration | ≥ 24 hours | — |
Temperature | ≥ 60 °C | — |
Cited non-patent literature · 2
