Patent
Atlas literature
Patent
US 9,209,254Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically illustrates a unit lattice of GaN. In A lxGayInz N semiconductor crystal (where 0 < x < 1, 0 < y < 1, 0 < z < 1, and x + y + z = 1), some …
FIG. 2, m -plane is in parallel with c-axis and is orthogonal to c-plane. In the m -plane, Ga atoms and nitrogen atoms are present on the same atomic plane, …
FIG. 3A. The a-plane is a collective term for (11-20) plane, (-1-120) plane, (1-210) plane, (-12-10) plane, (-2110) plane, and (2-1-10) plane.
FIG. 4. At first, as shown in
FIG. 5C. The p-A l GaN layer 57 provided in the p-type gallium nitride-based semiconductor 53 can reduce overflow of electrons injected during the operation of …
FIG. 6C. The p-A I GaN layer 57 provided in the p-type gallium nitride-based semiconductor 53 can reduce overflow of electrons injected during the operation of …
FIG. 7A, all of the images show that relatively planar Al surface and Al-GaN interface were manufactured at a 5 point before heat treatment. On the other hand, …
FIG. 8A is a comparative example, showing an optical microscope image of an 20 interface, before heat treatment, of an Al layer with an unmodified surface of an …
FIG. 9A shows a structure including a gallium nitride-based semiconductor layer and a metal layer of the first example, and is an optical microscope image of a …
FIG. 10A.
FIG. 11. It is known from this that the Al layer on the modified surface of the n-type GaN 10 also exhibits a low contact resistance with respect to the GaN …
FIG. 12.
FIG. 13, whereas the Ag layer on the modified surface of the n-type GaN exhibits good electrical characteristics, that is, an ohmic contact was formed. This …
FIG. 14.
FIG. 15. However, in the inventive example where the surface was modified, almost no SPR absorption was observed as shown in
FIG. 16.
FIG. 17A is a comparative example, showing an optical microscope image of an interface, before heat treatment, of an Ag layer with an unmodified surface of an m …
FIG. 18B. It is known from this that the Ag layer on the modified surface of the n-type GaN is firmly connected to the GaN layer, and is therefore strong against …
FIG. 19.
FIG. 20. In the comparative example where the surface was not modified, a lot of nanoparticles are present in the Ag layer, and a maximum grain size is less …
FIG. 21 shows a structure of a comparative example of the second example, and is a 15 cross- sectional transmission electron microscope (TEM) image of an …
FIG. 22.
FIG. 23. On the other hand, in the 25 inventive example where the surface was modified, only four crystal grains are present in the 30 P₆₅₉₁₁₉ Ag layer shown in
FIG. 24, and a maximum length of the crystal grain at the interface with the m-plane n-type GaN in an in-plane direction is not less than 200 nm and not more …
FIG. 25. The gallium nitride-based semiconductor layer is an n-type GaN layer, for example. Next, in step S 1, the surface of the gallium nitride-based …
FIG. 26. For 15 example, the gallium nitride-based semiconductor is a substrate and an n-type gallium nitride- based semiconductor layer formed on the …
FIG. 27. For 34 P₆₅₉₁₁₉ example, the gallium nitride-based semiconductor is a substrate and an n-type gallium nitride-based semiconductor layer formed on the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure, comprising: a gallium nitride-based semiconductor layer having an m -plane as a principal plane; and a silver layer provided on the principal plane, wherein the principal plane has an n-type conductivity, an interface between the gallium nitride-based semiconductor layer and the silver layer contains oxygen, [[and]] the silver layer includes a crystal grain extending from a lower surface to an upper surface of the silver layer, and an oxvgen concentration at the interface between the gallium nitride-based semiconductor layer and the silver layer is not less than times and not more than 200 times an oxygen concentration in the silver layer.
The structure of claim 1, wherein surface plasmon resonance absorption is not observed in light reflected by the interface between the gallium nitride-based semiconductor layer and the silver layer, within a wavelength range of from 450 nm to 500 nm.
The structure of claim 1, wherein the silver layer has a thickness of not less than 200 nm.
The structure of claim 1, wherein the silver layer has a thickness of not more than 1200 nm.
The structure of claim 1, wherein the crystal grain has a maximum length of not less than 200 nm.
The structure of claim 1, wherein the crystal grain has a maximum length of not more than 1200 nm.
The structure of claim 1, wherein an arithmetic average roughness Ra of the interface of the silver layer with the gallium nitride-based semiconductor layer in an in-plane direction is not less than 0.27 nm and not more than 2.65 nm in the case of a reference length of 3.5 pm.
A gallium nitride-based semiconductor light-emitting device, comprising: the structure of claim 1; a p-type gallium nitride-based semiconductor layer, and a light-emitting layer sandwiched between the gallium nitride-based semiconductor layer and the p-type gallium nitride-based semiconductor layer, wherein the gallium nitride-based semiconductor layer is an n-type gallium nitride-based semiconductor layer, and the silver layer is an electrode for the n-type gallium nitride-based semiconductor layer.
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A structure, comprising: a gallium nitride-based semiconductor layer having an m -plane as a principal plane; and a silver layer provided on the principal plane, wherein the principal plane has an n-type conductivity, an interface between the gallium nitride-based semiconductor layer and the silver layer contains oxygen, the silver layer includes a crystal grain extending from a lower surface to an 3 of 7 Application No. 14/290,311 PATENT upper surface of the silver layer, an oxygen concentration at the interface between the gallium nitride-based semiconductor layer and the silver layer is not less than 3 x 1 0 20 cm⁻³ and not more than 2 x 10 21 cm⁻³, and an oxygen concentration in the silver layer is not more than 1 x 10 19 cm⁻³.
The structure of claim 16, wherein surface plasmon resonance absorption is not observed in light reflected by the interface between the gallium nitride-based semiconductor layer and the silver layer, within a wavelength range of from 450 nm to 500 nm.
The structure of claim 16, wherein the silver layer has a thickness of not less than 200 nm.
The structure of claim 16, wherein the silver layer has a thickness of not more than 1200 nm.
The structure of claim 16, wherein the crystal grain has a maximum length of not less than 200 nm.
The structure of claim 16, wherein the crystal grain has a maximum length of not more than 1200 nm.
The structure of claim 16, wherein an arithmetic average roughness Ra of the interface of the silver layer with the gallium nitride-based semiconductor layer in an in-plane direction is not less than 0.27 nm and not more than 2.65 nm in the case of a reference length of 3.5 pm.
A gallium nitride-based semiconductor light-emitting device, comprising: the structure of claim 16; 4 of 7 Application No. 14/290,311 PATENT a p-type gallium nitride-based semiconductor layer, and a light-emitting layer sandwiched between the gallium nitride-based semiconductor layer and the p-type gallium nitride-based semiconductor layer, wherein the gallium nitride-based semiconductor layer is an n-type gallium nitride-based semiconductor layer, and the silver layer is an electrode for the n-type gallium nitride-based semiconductor layer. 5 of 7
Layer stacks claimed or described, ordered top of device to substrate.
GaN m-plane/silver layer structure
gallium nitride-based semiconductor light-emitting device
Materials described outside the worked examples.
gallium nitride-based semiconductor layer (n-type, m-plane)
silver layer
Ag
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2, m -plane is in parallel with c-axis and is orthogonal to c-plane. In the m -plane, Ga atoms and nitrogen atoms are present on the same atomic plane, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Oxygen concentration at GaN/Ag interface (claim 16 range) | 300000000000000000000–2e+21 cm⁻³ | gallium nitride-based semiconductor layer (n-type, m-plane) |
Oxygen concentration in silver layer (claim 16 upper bound) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,209,254Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically illustrates a unit lattice of GaN. In A lxGayInz N semiconductor crystal (where 0 < x < 1, 0 < y < 1, 0 < z < 1, and x + y + z = 1), some …
FIG. 2, m -plane is in parallel with c-axis and is orthogonal to c-plane. In the m -plane, Ga atoms and nitrogen atoms are present on the same atomic plane, …
FIG. 3A. The a-plane is a collective term for (11-20) plane, (-1-120) plane, (1-210) plane, (-12-10) plane, (-2110) plane, and (2-1-10) plane.
FIG. 4. At first, as shown in
FIG. 5C. The p-A l GaN layer 57 provided in the p-type gallium nitride-based semiconductor 53 can reduce overflow of electrons injected during the operation of …
FIG. 6C. The p-A I GaN layer 57 provided in the p-type gallium nitride-based semiconductor 53 can reduce overflow of electrons injected during the operation of …
FIG. 7A, all of the images show that relatively planar Al surface and Al-GaN interface were manufactured at a 5 point before heat treatment. On the other hand, …
FIG. 8A is a comparative example, showing an optical microscope image of an 20 interface, before heat treatment, of an Al layer with an unmodified surface of an …
FIG. 9A shows a structure including a gallium nitride-based semiconductor layer and a metal layer of the first example, and is an optical microscope image of a …
FIG. 10A.
FIG. 11. It is known from this that the Al layer on the modified surface of the n-type GaN 10 also exhibits a low contact resistance with respect to the GaN …
FIG. 12.
FIG. 13, whereas the Ag layer on the modified surface of the n-type GaN exhibits good electrical characteristics, that is, an ohmic contact was formed. This …
FIG. 14.
FIG. 15. However, in the inventive example where the surface was modified, almost no SPR absorption was observed as shown in
FIG. 16.
FIG. 17A is a comparative example, showing an optical microscope image of an interface, before heat treatment, of an Ag layer with an unmodified surface of an m …
FIG. 18B. It is known from this that the Ag layer on the modified surface of the n-type GaN is firmly connected to the GaN layer, and is therefore strong against …
FIG. 19.
FIG. 20. In the comparative example where the surface was not modified, a lot of nanoparticles are present in the Ag layer, and a maximum grain size is less …
FIG. 21 shows a structure of a comparative example of the second example, and is a 15 cross- sectional transmission electron microscope (TEM) image of an …
FIG. 22.
FIG. 23. On the other hand, in the 25 inventive example where the surface was modified, only four crystal grains are present in the 30 P₆₅₉₁₁₉ Ag layer shown in
FIG. 24, and a maximum length of the crystal grain at the interface with the m-plane n-type GaN in an in-plane direction is not less than 200 nm and not more …
FIG. 25. The gallium nitride-based semiconductor layer is an n-type GaN layer, for example. Next, in step S 1, the surface of the gallium nitride-based …
FIG. 26. For 15 example, the gallium nitride-based semiconductor is a substrate and an n-type gallium nitride- based semiconductor layer formed on the …
FIG. 27. For 34 P₆₅₉₁₁₉ example, the gallium nitride-based semiconductor is a substrate and an n-type gallium nitride-based semiconductor layer formed on the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure, comprising: a gallium nitride-based semiconductor layer having an m -plane as a principal plane; and a silver layer provided on the principal plane, wherein the principal plane has an n-type conductivity, an interface between the gallium nitride-based semiconductor layer and the silver layer contains oxygen, [[and]] the silver layer includes a crystal grain extending from a lower surface to an upper surface of the silver layer, and an oxvgen concentration at the interface between the gallium nitride-based semiconductor layer and the silver layer is not less than times and not more than 200 times an oxygen concentration in the silver layer.
The structure of claim 1, wherein surface plasmon resonance absorption is not observed in light reflected by the interface between the gallium nitride-based semiconductor layer and the silver layer, within a wavelength range of from 450 nm to 500 nm.
The structure of claim 1, wherein the silver layer has a thickness of not less than 200 nm.
The structure of claim 1, wherein the silver layer has a thickness of not more than 1200 nm.
The structure of claim 1, wherein the crystal grain has a maximum length of not less than 200 nm.
The structure of claim 1, wherein the crystal grain has a maximum length of not more than 1200 nm.
The structure of claim 1, wherein an arithmetic average roughness Ra of the interface of the silver layer with the gallium nitride-based semiconductor layer in an in-plane direction is not less than 0.27 nm and not more than 2.65 nm in the case of a reference length of 3.5 pm.
A gallium nitride-based semiconductor light-emitting device, comprising: the structure of claim 1; a p-type gallium nitride-based semiconductor layer, and a light-emitting layer sandwiched between the gallium nitride-based semiconductor layer and the p-type gallium nitride-based semiconductor layer, wherein the gallium nitride-based semiconductor layer is an n-type gallium nitride-based semiconductor layer, and the silver layer is an electrode for the n-type gallium nitride-based semiconductor layer.
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A structure, comprising: a gallium nitride-based semiconductor layer having an m -plane as a principal plane; and a silver layer provided on the principal plane, wherein the principal plane has an n-type conductivity, an interface between the gallium nitride-based semiconductor layer and the silver layer contains oxygen, the silver layer includes a crystal grain extending from a lower surface to an 3 of 7 Application No. 14/290,311 PATENT upper surface of the silver layer, an oxygen concentration at the interface between the gallium nitride-based semiconductor layer and the silver layer is not less than 3 x 1 0 20 cm⁻³ and not more than 2 x 10 21 cm⁻³, and an oxygen concentration in the silver layer is not more than 1 x 10 19 cm⁻³.
The structure of claim 16, wherein surface plasmon resonance absorption is not observed in light reflected by the interface between the gallium nitride-based semiconductor layer and the silver layer, within a wavelength range of from 450 nm to 500 nm.
The structure of claim 16, wherein the silver layer has a thickness of not less than 200 nm.
The structure of claim 16, wherein the silver layer has a thickness of not more than 1200 nm.
The structure of claim 16, wherein the crystal grain has a maximum length of not less than 200 nm.
The structure of claim 16, wherein the crystal grain has a maximum length of not more than 1200 nm.
The structure of claim 16, wherein an arithmetic average roughness Ra of the interface of the silver layer with the gallium nitride-based semiconductor layer in an in-plane direction is not less than 0.27 nm and not more than 2.65 nm in the case of a reference length of 3.5 pm.
A gallium nitride-based semiconductor light-emitting device, comprising: the structure of claim 16; 4 of 7 Application No. 14/290,311 PATENT a p-type gallium nitride-based semiconductor layer, and a light-emitting layer sandwiched between the gallium nitride-based semiconductor layer and the p-type gallium nitride-based semiconductor layer, wherein the gallium nitride-based semiconductor layer is an n-type gallium nitride-based semiconductor layer, and the silver layer is an electrode for the n-type gallium nitride-based semiconductor layer. 5 of 7
Layer stacks claimed or described, ordered top of device to substrate.
GaN m-plane/silver layer structure
gallium nitride-based semiconductor light-emitting device
Materials described outside the worked examples.
gallium nitride-based semiconductor layer (n-type, m-plane)
silver layer
Ag
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2, m -plane is in parallel with c-axis and is orthogonal to c-plane. In the m -plane, Ga atoms and nitrogen atoms are present on the same atomic plane, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Oxygen concentration at GaN/Ag interface (claim 16 range) | 300000000000000000000–2e+21 cm⁻³ | gallium nitride-based semiconductor layer (n-type, m-plane) |
Oxygen concentration in silver layer (claim 16 upper bound) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,209,254Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically illustrates a unit lattice of GaN. In A lxGayInz N semiconductor crystal (where 0 < x < 1, 0 < y < 1, 0 < z < 1, and x + y + z = 1), some …
FIG. 2, m -plane is in parallel with c-axis and is orthogonal to c-plane. In the m -plane, Ga atoms and nitrogen atoms are present on the same atomic plane, …
FIG. 3A. The a-plane is a collective term for (11-20) plane, (-1-120) plane, (1-210) plane, (-12-10) plane, (-2110) plane, and (2-1-10) plane.
FIG. 4. At first, as shown in
FIG. 5C. The p-A l GaN layer 57 provided in the p-type gallium nitride-based semiconductor 53 can reduce overflow of electrons injected during the operation of …
FIG. 6C. The p-A I GaN layer 57 provided in the p-type gallium nitride-based semiconductor 53 can reduce overflow of electrons injected during the operation of …
FIG. 7A, all of the images show that relatively planar Al surface and Al-GaN interface were manufactured at a 5 point before heat treatment. On the other hand, …
FIG. 8A is a comparative example, showing an optical microscope image of an 20 interface, before heat treatment, of an Al layer with an unmodified surface of an …
FIG. 9A shows a structure including a gallium nitride-based semiconductor layer and a metal layer of the first example, and is an optical microscope image of a …
FIG. 10A.
FIG. 11. It is known from this that the Al layer on the modified surface of the n-type GaN 10 also exhibits a low contact resistance with respect to the GaN …
FIG. 12.
FIG. 13, whereas the Ag layer on the modified surface of the n-type GaN exhibits good electrical characteristics, that is, an ohmic contact was formed. This …
FIG. 14.
FIG. 15. However, in the inventive example where the surface was modified, almost no SPR absorption was observed as shown in
FIG. 16.
FIG. 17A is a comparative example, showing an optical microscope image of an interface, before heat treatment, of an Ag layer with an unmodified surface of an m …
FIG. 18B. It is known from this that the Ag layer on the modified surface of the n-type GaN is firmly connected to the GaN layer, and is therefore strong against …
FIG. 19.
FIG. 20. In the comparative example where the surface was not modified, a lot of nanoparticles are present in the Ag layer, and a maximum grain size is less …
FIG. 21 shows a structure of a comparative example of the second example, and is a 15 cross- sectional transmission electron microscope (TEM) image of an …
FIG. 22.
FIG. 23. On the other hand, in the 25 inventive example where the surface was modified, only four crystal grains are present in the 30 P₆₅₉₁₁₉ Ag layer shown in
FIG. 24, and a maximum length of the crystal grain at the interface with the m-plane n-type GaN in an in-plane direction is not less than 200 nm and not more …
FIG. 25. The gallium nitride-based semiconductor layer is an n-type GaN layer, for example. Next, in step S 1, the surface of the gallium nitride-based …
FIG. 26. For 15 example, the gallium nitride-based semiconductor is a substrate and an n-type gallium nitride- based semiconductor layer formed on the …
FIG. 27. For 34 P₆₅₉₁₁₉ example, the gallium nitride-based semiconductor is a substrate and an n-type gallium nitride-based semiconductor layer formed on the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure, comprising: a gallium nitride-based semiconductor layer having an m -plane as a principal plane; and a silver layer provided on the principal plane, wherein the principal plane has an n-type conductivity, an interface between the gallium nitride-based semiconductor layer and the silver layer contains oxygen, [[and]] the silver layer includes a crystal grain extending from a lower surface to an upper surface of the silver layer, and an oxvgen concentration at the interface between the gallium nitride-based semiconductor layer and the silver layer is not less than times and not more than 200 times an oxygen concentration in the silver layer.
The structure of claim 1, wherein surface plasmon resonance absorption is not observed in light reflected by the interface between the gallium nitride-based semiconductor layer and the silver layer, within a wavelength range of from 450 nm to 500 nm.
The structure of claim 1, wherein the silver layer has a thickness of not less than 200 nm.
The structure of claim 1, wherein the silver layer has a thickness of not more than 1200 nm.
The structure of claim 1, wherein the crystal grain has a maximum length of not less than 200 nm.
The structure of claim 1, wherein the crystal grain has a maximum length of not more than 1200 nm.
The structure of claim 1, wherein an arithmetic average roughness Ra of the interface of the silver layer with the gallium nitride-based semiconductor layer in an in-plane direction is not less than 0.27 nm and not more than 2.65 nm in the case of a reference length of 3.5 pm.
A gallium nitride-based semiconductor light-emitting device, comprising: the structure of claim 1; a p-type gallium nitride-based semiconductor layer, and a light-emitting layer sandwiched between the gallium nitride-based semiconductor layer and the p-type gallium nitride-based semiconductor layer, wherein the gallium nitride-based semiconductor layer is an n-type gallium nitride-based semiconductor layer, and the silver layer is an electrode for the n-type gallium nitride-based semiconductor layer.
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-15. canceled
canceled
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A structure, comprising: a gallium nitride-based semiconductor layer having an m -plane as a principal plane; and a silver layer provided on the principal plane, wherein the principal plane has an n-type conductivity, an interface between the gallium nitride-based semiconductor layer and the silver layer contains oxygen, the silver layer includes a crystal grain extending from a lower surface to an 3 of 7 Application No. 14/290,311 PATENT upper surface of the silver layer, an oxygen concentration at the interface between the gallium nitride-based semiconductor layer and the silver layer is not less than 3 x 1 0 20 cm⁻³ and not more than 2 x 10 21 cm⁻³, and an oxygen concentration in the silver layer is not more than 1 x 10 19 cm⁻³.
The structure of claim 16, wherein surface plasmon resonance absorption is not observed in light reflected by the interface between the gallium nitride-based semiconductor layer and the silver layer, within a wavelength range of from 450 nm to 500 nm.
The structure of claim 16, wherein the silver layer has a thickness of not less than 200 nm.
The structure of claim 16, wherein the silver layer has a thickness of not more than 1200 nm.
The structure of claim 16, wherein the crystal grain has a maximum length of not less than 200 nm.
The structure of claim 16, wherein the crystal grain has a maximum length of not more than 1200 nm.
The structure of claim 16, wherein an arithmetic average roughness Ra of the interface of the silver layer with the gallium nitride-based semiconductor layer in an in-plane direction is not less than 0.27 nm and not more than 2.65 nm in the case of a reference length of 3.5 pm.
A gallium nitride-based semiconductor light-emitting device, comprising: the structure of claim 16; 4 of 7 Application No. 14/290,311 PATENT a p-type gallium nitride-based semiconductor layer, and a light-emitting layer sandwiched between the gallium nitride-based semiconductor layer and the p-type gallium nitride-based semiconductor layer, wherein the gallium nitride-based semiconductor layer is an n-type gallium nitride-based semiconductor layer, and the silver layer is an electrode for the n-type gallium nitride-based semiconductor layer. 5 of 7
Layer stacks claimed or described, ordered top of device to substrate.
GaN m-plane/silver layer structure
gallium nitride-based semiconductor light-emitting device
Materials described outside the worked examples.
gallium nitride-based semiconductor layer (n-type, m-plane)
silver layer
Ag
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2, m -plane is in parallel with c-axis and is orthogonal to c-plane. In the m -plane, Ga atoms and nitrogen atoms are present on the same atomic plane, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Oxygen concentration at GaN/Ag interface (claim 16 range) | 300000000000000000000–2e+21 cm⁻³ | gallium nitride-based semiconductor layer (n-type, m-plane) |
Oxygen concentration in silver layer (claim 16 upper bound) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,209,254Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically illustrates a unit lattice of GaN. In A lxGayInz N semiconductor crystal (where 0 < x < 1, 0 < y < 1, 0 < z < 1, and x + y + z = 1), some …
FIG. 2, m -plane is in parallel with c-axis and is orthogonal to c-plane. In the m -plane, Ga atoms and nitrogen atoms are present on the same atomic plane, …
FIG. 3A. The a-plane is a collective term for (11-20) plane, (-1-120) plane, (1-210) plane, (-12-10) plane, (-2110) plane, and (2-1-10) plane.
FIG. 4. At first, as shown in
FIG. 5C. The p-A l GaN layer 57 provided in the p-type gallium nitride-based semiconductor 53 can reduce overflow of electrons injected during the operation of …
FIG. 6C. The p-A I GaN layer 57 provided in the p-type gallium nitride-based semiconductor 53 can reduce overflow of electrons injected during the operation of …
FIG. 7A, all of the images show that relatively planar Al surface and Al-GaN interface were manufactured at a 5 point before heat treatment. On the other hand, …
FIG. 8A is a comparative example, showing an optical microscope image of an 20 interface, before heat treatment, of an Al layer with an unmodified surface of an …
FIG. 9A shows a structure including a gallium nitride-based semiconductor layer and a metal layer of the first example, and is an optical microscope image of a …
FIG. 10A.
FIG. 11. It is known from this that the Al layer on the modified surface of the n-type GaN 10 also exhibits a low contact resistance with respect to the GaN …
FIG. 12.
FIG. 13, whereas the Ag layer on the modified surface of the n-type GaN exhibits good electrical characteristics, that is, an ohmic contact was formed. This …
FIG. 14.
FIG. 15. However, in the inventive example where the surface was modified, almost no SPR absorption was observed as shown in
FIG. 16.
FIG. 17A is a comparative example, showing an optical microscope image of an interface, before heat treatment, of an Ag layer with an unmodified surface of an m …
FIG. 18B. It is known from this that the Ag layer on the modified surface of the n-type GaN is firmly connected to the GaN layer, and is therefore strong against …
FIG. 19.
FIG. 20. In the comparative example where the surface was not modified, a lot of nanoparticles are present in the Ag layer, and a maximum grain size is less …
FIG. 21 shows a structure of a comparative example of the second example, and is a 15 cross- sectional transmission electron microscope (TEM) image of an …
FIG. 22.
FIG. 23. On the other hand, in the 25 inventive example where the surface was modified, only four crystal grains are present in the 30 P₆₅₉₁₁₉ Ag layer shown in
FIG. 24, and a maximum length of the crystal grain at the interface with the m-plane n-type GaN in an in-plane direction is not less than 200 nm and not more …
FIG. 25. The gallium nitride-based semiconductor layer is an n-type GaN layer, for example. Next, in step S 1, the surface of the gallium nitride-based …
FIG. 26. For 15 example, the gallium nitride-based semiconductor is a substrate and an n-type gallium nitride- based semiconductor layer formed on the …
FIG. 27. For 34 P₆₅₉₁₁₉ example, the gallium nitride-based semiconductor is a substrate and an n-type gallium nitride-based semiconductor layer formed on the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure, comprising: a gallium nitride-based semiconductor layer having an m -plane as a principal plane; and a silver layer provided on the principal plane, wherein the principal plane has an n-type conductivity, an interface between the gallium nitride-based semiconductor layer and the silver layer contains oxygen, [[and]] the silver layer includes a crystal grain extending from a lower surface to an upper surface of the silver layer, and an oxvgen concentration at the interface between the gallium nitride-based semiconductor layer and the silver layer is not less than times and not more than 200 times an oxygen concentration in the silver layer.
The structure of claim 1, wherein surface plasmon resonance absorption is not observed in light reflected by the interface between the gallium nitride-based semiconductor layer and the silver layer, within a wavelength range of from 450 nm to 500 nm.
The structure of claim 1, wherein the silver layer has a thickness of not less than 200 nm.
The structure of claim 1, wherein the silver layer has a thickness of not more than 1200 nm.
The structure of claim 1, wherein the crystal grain has a maximum length of not less than 200 nm.
The structure of claim 1, wherein the crystal grain has a maximum length of not more than 1200 nm.
The structure of claim 1, wherein an arithmetic average roughness Ra of the interface of the silver layer with the gallium nitride-based semiconductor layer in an in-plane direction is not less than 0.27 nm and not more than 2.65 nm in the case of a reference length of 3.5 pm.
A gallium nitride-based semiconductor light-emitting device, comprising: the structure of claim 1; a p-type gallium nitride-based semiconductor layer, and a light-emitting layer sandwiched between the gallium nitride-based semiconductor layer and the p-type gallium nitride-based semiconductor layer, wherein the gallium nitride-based semiconductor layer is an n-type gallium nitride-based semiconductor layer, and the silver layer is an electrode for the n-type gallium nitride-based semiconductor layer.
canceled
canceled
-15. canceled
canceled
canceled
canceled
canceled
A structure, comprising: a gallium nitride-based semiconductor layer having an m -plane as a principal plane; and a silver layer provided on the principal plane, wherein the principal plane has an n-type conductivity, an interface between the gallium nitride-based semiconductor layer and the silver layer contains oxygen, the silver layer includes a crystal grain extending from a lower surface to an 3 of 7 Application No. 14/290,311 PATENT upper surface of the silver layer, an oxygen concentration at the interface between the gallium nitride-based semiconductor layer and the silver layer is not less than 3 x 1 0 20 cm⁻³ and not more than 2 x 10 21 cm⁻³, and an oxygen concentration in the silver layer is not more than 1 x 10 19 cm⁻³.
The structure of claim 16, wherein surface plasmon resonance absorption is not observed in light reflected by the interface between the gallium nitride-based semiconductor layer and the silver layer, within a wavelength range of from 450 nm to 500 nm.
The structure of claim 16, wherein the silver layer has a thickness of not less than 200 nm.
The structure of claim 16, wherein the silver layer has a thickness of not more than 1200 nm.
The structure of claim 16, wherein the crystal grain has a maximum length of not less than 200 nm.
The structure of claim 16, wherein the crystal grain has a maximum length of not more than 1200 nm.
The structure of claim 16, wherein an arithmetic average roughness Ra of the interface of the silver layer with the gallium nitride-based semiconductor layer in an in-plane direction is not less than 0.27 nm and not more than 2.65 nm in the case of a reference length of 3.5 pm.
A gallium nitride-based semiconductor light-emitting device, comprising: the structure of claim 16; 4 of 7 Application No. 14/290,311 PATENT a p-type gallium nitride-based semiconductor layer, and a light-emitting layer sandwiched between the gallium nitride-based semiconductor layer and the p-type gallium nitride-based semiconductor layer, wherein the gallium nitride-based semiconductor layer is an n-type gallium nitride-based semiconductor layer, and the silver layer is an electrode for the n-type gallium nitride-based semiconductor layer. 5 of 7
Layer stacks claimed or described, ordered top of device to substrate.
GaN m-plane/silver layer structure
gallium nitride-based semiconductor light-emitting device
Materials described outside the worked examples.
gallium nitride-based semiconductor layer (n-type, m-plane)
silver layer
Ag
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2, m -plane is in parallel with c-axis and is orthogonal to c-plane. In the m -plane, Ga atoms and nitrogen atoms are present on the same atomic plane, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Oxygen concentration at GaN/Ag interface (claim 16 range) | 300000000000000000000–2e+21 cm⁻³ | gallium nitride-based semiconductor layer (n-type, m-plane) |
Oxygen concentration in silver layer (claim 16 upper bound) |
Related documents with shared materials, methods, properties, or citations.
p-type gallium nitride-based semiconductor layer
light-emitting layer
FIG. 4. At first, as shown in
FIG. 11. It is known from this that the Al layer on the modified surface of the n-type GaN 10 also exhibits a low contact resistance with respect to the GaN …
FIG. 11. It is known from this that the Al layer on the modified surface of the n-type GaN 10 also exhibits a low contact resistance with respect to the GaN …
FIG. 13, whereas the Ag layer on the modified surface of the n-type GaN exhibits good electrical characteristics, that is, an ohmic contact was formed. This …
FIG. 13, whereas the Ag layer on the modified surface of the n-type GaN exhibits good electrical characteristics, that is, an ohmic contact was formed. This …
FIG. 15. However, in the inventive example where the surface was modified, almost no SPR absorption was observed as shown in
FIG. 18B. It is known from this that the Ag layer on the modified surface of the n-type GaN is firmly connected to the GaN layer, and is therefore strong against …
FIG. 20. In the comparative example where the surface was not modified, a lot of nanoparticles are present in the Ag layer, and a maximum grain size is less …
FIG. 21 shows a structure of a comparative example of the second example, and is a 15 cross- sectional transmission electron microscope (TEM) image of an …
FIG. 23. On the other hand, in the 25 inventive example where the surface was modified, only four crystal grains are present in the 30 P₆₅₉₁₁₉ Ag layer shown in
FIG. 24, and a maximum length of the crystal grain at the interface with the m-plane n-type GaN in an in-plane direction is not less than 200 nm and not more …
FIG. 24, and a maximum length of the crystal grain at the interface with the m-plane n-type GaN in an in-plane direction is not less than 200 nm and not more …
FIG. 26. For 15 example, the gallium nitride-based semiconductor is a substrate and an n-type gallium nitride- based semiconductor layer formed on the …
FIG. 27. For 34 P₆₅₉₁₁₉ example, the gallium nitride-based semiconductor is a substrate and an n-type gallium nitride-based semiconductor layer formed on the …
Ag |
Arithmetic average roughness Ra of Ag/GaN interface (claims 9, 22) | 0.27–2.65 nm | Ag |
Thickness | 450–500 nm | — |
Thickness | 350–800 nm | — |
Duration | 10–20 minutes | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 0.27 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≤ 5 nm | — |
Temperature | ≤ 900 °C | — |
Thickness | ≤ 15 nm | — |
Thickness | ≤ 50 nm | — |
Temperature | ≤ 800 °C | — |
Thickness | ≤ 600 nm | — |
Thickness | ≤ 400 nm | — |
Thickness | ≥ 1200 nm | — |
Thickness | ≥ 2.65 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 30 nm | — |
Temperature | ≥ 1100 °C | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 300 nm | — |
Temperature | ≥ 900 °C | — |
p-type gallium nitride-based semiconductor layer
light-emitting layer
FIG. 4. At first, as shown in
FIG. 11. It is known from this that the Al layer on the modified surface of the n-type GaN 10 also exhibits a low contact resistance with respect to the GaN …
FIG. 11. It is known from this that the Al layer on the modified surface of the n-type GaN 10 also exhibits a low contact resistance with respect to the GaN …
FIG. 13, whereas the Ag layer on the modified surface of the n-type GaN exhibits good electrical characteristics, that is, an ohmic contact was formed. This …
FIG. 13, whereas the Ag layer on the modified surface of the n-type GaN exhibits good electrical characteristics, that is, an ohmic contact was formed. This …
FIG. 15. However, in the inventive example where the surface was modified, almost no SPR absorption was observed as shown in
FIG. 18B. It is known from this that the Ag layer on the modified surface of the n-type GaN is firmly connected to the GaN layer, and is therefore strong against …
FIG. 20. In the comparative example where the surface was not modified, a lot of nanoparticles are present in the Ag layer, and a maximum grain size is less …
FIG. 21 shows a structure of a comparative example of the second example, and is a 15 cross- sectional transmission electron microscope (TEM) image of an …
FIG. 23. On the other hand, in the 25 inventive example where the surface was modified, only four crystal grains are present in the 30 P₆₅₉₁₁₉ Ag layer shown in
FIG. 24, and a maximum length of the crystal grain at the interface with the m-plane n-type GaN in an in-plane direction is not less than 200 nm and not more …
FIG. 24, and a maximum length of the crystal grain at the interface with the m-plane n-type GaN in an in-plane direction is not less than 200 nm and not more …
FIG. 26. For 15 example, the gallium nitride-based semiconductor is a substrate and an n-type gallium nitride- based semiconductor layer formed on the …
FIG. 27. For 34 P₆₅₉₁₁₉ example, the gallium nitride-based semiconductor is a substrate and an n-type gallium nitride-based semiconductor layer formed on the …
Ag |
Arithmetic average roughness Ra of Ag/GaN interface (claims 9, 22) | 0.27–2.65 nm | Ag |
Thickness | 450–500 nm | — |
Thickness | 350–800 nm | — |
Duration | 10–20 minutes | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 0.27 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≤ 5 nm | — |
Temperature | ≤ 900 °C | — |
Thickness | ≤ 15 nm | — |
Thickness | ≤ 50 nm | — |
Temperature | ≤ 800 °C | — |
Thickness | ≤ 600 nm | — |
Thickness | ≤ 400 nm | — |
Thickness | ≥ 1200 nm | — |
Thickness | ≥ 2.65 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 30 nm | — |
Temperature | ≥ 1100 °C | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 300 nm | — |
Temperature | ≥ 900 °C | — |
p-type gallium nitride-based semiconductor layer
light-emitting layer
FIG. 4. At first, as shown in
FIG. 11. It is known from this that the Al layer on the modified surface of the n-type GaN 10 also exhibits a low contact resistance with respect to the GaN …
FIG. 11. It is known from this that the Al layer on the modified surface of the n-type GaN 10 also exhibits a low contact resistance with respect to the GaN …
FIG. 13, whereas the Ag layer on the modified surface of the n-type GaN exhibits good electrical characteristics, that is, an ohmic contact was formed. This …
FIG. 13, whereas the Ag layer on the modified surface of the n-type GaN exhibits good electrical characteristics, that is, an ohmic contact was formed. This …
FIG. 15. However, in the inventive example where the surface was modified, almost no SPR absorption was observed as shown in
FIG. 18B. It is known from this that the Ag layer on the modified surface of the n-type GaN is firmly connected to the GaN layer, and is therefore strong against …
FIG. 20. In the comparative example where the surface was not modified, a lot of nanoparticles are present in the Ag layer, and a maximum grain size is less …
FIG. 21 shows a structure of a comparative example of the second example, and is a 15 cross- sectional transmission electron microscope (TEM) image of an …
FIG. 23. On the other hand, in the 25 inventive example where the surface was modified, only four crystal grains are present in the 30 P₆₅₉₁₁₉ Ag layer shown in
FIG. 24, and a maximum length of the crystal grain at the interface with the m-plane n-type GaN in an in-plane direction is not less than 200 nm and not more …
FIG. 24, and a maximum length of the crystal grain at the interface with the m-plane n-type GaN in an in-plane direction is not less than 200 nm and not more …
FIG. 26. For 15 example, the gallium nitride-based semiconductor is a substrate and an n-type gallium nitride- based semiconductor layer formed on the …
FIG. 27. For 34 P₆₅₉₁₁₉ example, the gallium nitride-based semiconductor is a substrate and an n-type gallium nitride-based semiconductor layer formed on the …
Ag |
Arithmetic average roughness Ra of Ag/GaN interface (claims 9, 22) | 0.27–2.65 nm | Ag |
Thickness | 450–500 nm | — |
Thickness | 350–800 nm | — |
Duration | 10–20 minutes | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 0.27 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≤ 5 nm | — |
Temperature | ≤ 900 °C | — |
Thickness | ≤ 15 nm | — |
Thickness | ≤ 50 nm | — |
Temperature | ≤ 800 °C | — |
Thickness | ≤ 600 nm | — |
Thickness | ≤ 400 nm | — |
Thickness | ≥ 1200 nm | — |
Thickness | ≥ 2.65 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 30 nm | — |
Temperature | ≥ 1100 °C | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 300 nm | — |
Temperature | ≥ 900 °C | — |
p-type gallium nitride-based semiconductor layer
light-emitting layer
FIG. 4. At first, as shown in
FIG. 11. It is known from this that the Al layer on the modified surface of the n-type GaN 10 also exhibits a low contact resistance with respect to the GaN …
FIG. 11. It is known from this that the Al layer on the modified surface of the n-type GaN 10 also exhibits a low contact resistance with respect to the GaN …
FIG. 13, whereas the Ag layer on the modified surface of the n-type GaN exhibits good electrical characteristics, that is, an ohmic contact was formed. This …
FIG. 13, whereas the Ag layer on the modified surface of the n-type GaN exhibits good electrical characteristics, that is, an ohmic contact was formed. This …
FIG. 15. However, in the inventive example where the surface was modified, almost no SPR absorption was observed as shown in
FIG. 18B. It is known from this that the Ag layer on the modified surface of the n-type GaN is firmly connected to the GaN layer, and is therefore strong against …
FIG. 20. In the comparative example where the surface was not modified, a lot of nanoparticles are present in the Ag layer, and a maximum grain size is less …
FIG. 21 shows a structure of a comparative example of the second example, and is a 15 cross- sectional transmission electron microscope (TEM) image of an …
FIG. 23. On the other hand, in the 25 inventive example where the surface was modified, only four crystal grains are present in the 30 P₆₅₉₁₁₉ Ag layer shown in
FIG. 24, and a maximum length of the crystal grain at the interface with the m-plane n-type GaN in an in-plane direction is not less than 200 nm and not more …
FIG. 24, and a maximum length of the crystal grain at the interface with the m-plane n-type GaN in an in-plane direction is not less than 200 nm and not more …
FIG. 26. For 15 example, the gallium nitride-based semiconductor is a substrate and an n-type gallium nitride- based semiconductor layer formed on the …
FIG. 27. For 34 P₆₅₉₁₁₉ example, the gallium nitride-based semiconductor is a substrate and an n-type gallium nitride-based semiconductor layer formed on the …
Ag |
Arithmetic average roughness Ra of Ag/GaN interface (claims 9, 22) | 0.27–2.65 nm | Ag |
Thickness | 450–500 nm | — |
Thickness | 350–800 nm | — |
Duration | 10–20 minutes | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 0.27 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≤ 5 nm | — |
Temperature | ≤ 900 °C | — |
Thickness | ≤ 15 nm | — |
Thickness | ≤ 50 nm | — |
Temperature | ≤ 800 °C | — |
Thickness | ≤ 600 nm | — |
Thickness | ≤ 400 nm | — |
Thickness | ≥ 1200 nm | — |
Thickness | ≥ 2.65 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 30 nm | — |
Temperature | ≥ 1100 °C | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 300 nm | — |
Temperature | ≥ 900 °C | — |
