Patent
US 9,236,633SYNTHESIS AND APPLICATIONS OF GRAPHENE BASED NANOMATERIALS
Junhong Chen
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,236,633Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of a graphene monoxide (GMO) according to an embodiment of the present invention. [0010]
FIG. 2 is a schematic illustration of a lithium-ion battery including an anode with graphene-based nanomaterials prepared according to an embodiment of the …
FIG. 3 is a schematic illustration of an evolution of electron diffraction patterns with temperature of a graphene oxide (GO) sample according to an embodiment …
FIGS. 4(a), 4(b), 4(c), and 4(d) are graphs plotting normal incidence (NI) infrared absorbance spectra of (a) unreduced graphene oxide, (b) thermally reduced …
FIGS. 5(a), 5(b), and 5(c) are schematic illustrations of a GMO and its molecular vibration modes according to an embodiment of the present invention. [0014]
FIG. 6(b), high frequency components of the image beyond the lattice resolution of the microscope were filtered out. In the diffractogram of this region, two …
FIG. 7, a direct band gap of approximately 0.9 eV is shown at the X point of a GMO according to an embodiment of the present invention. The size (and …
FIG. 8). Analysis of the relative intensities showed that the {100} type reflections produced a greater diffracted intensity than the { 11 0} reflections, …
FIG. 9) recorded at higher scattering angles (i.e., smaller lattice spacing), indicated weaker higher order rings consistent with crystalline graphene. In …
FIG. 10 is a graph plotting SA E D temperature-dependent fitting parameters of GO/graphene and GMO diffraction peaks according to embodiments of the present …
FIG. 11). [0070] The atomic resolution HRTEM image in
FIG. 12 is a current-voltage graph of a TRG-O according to an embodiment of the present invention. [0021]
FIG. 13, alpha phase GMO was first observed at 550 ° C. Graphene was also observed along with molybdenum dioxide at 600 ° C, with and without electron beam …
FIG.14, in addition to diffraction rings that are typical of GMO spacings, also called 2D alpha phase in our lab books, spots are also seen that correspond to …
FIG. 15, the resulting cast and grid were subjected to vacuum at approximately 1. 3x 10 5 Pa and heated inside the TEM while monitored using SA E D. Graphene …
FIG. 16 (b), there was a hint of formation of rings Ring A (0.272nm) and B (0.16 1n m), which are equivalent to Ring III (0.260 nm) and Ring IV (0.152 nm), but …
FIG. 17 (e), an additional 10 minutes annealing showed stronger g r aphene monoxide rings (labeled III and IV), visible in many regions of the sample. …
FIGS. 18(a), 18(b), and 18(c) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a first region at 22 ° C, (b) of the first …
FIGS. 19(a) and 19(b) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a second region at 22 ° C and (b) of the second …
FIGS. 20(a) and 20(b) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a first region at 22 ° C and (b) of the first region …
FIGS. 21(a) and 21(b) are schematic illustrations of a GMO according to an embodiment of the present invention. [0030]
FIG. 22(a). For the fully optimized structure, GMO is a semiconductor with a calculated indirect band gap of approximately 0.6 eV. Upon planar deformation, GMO …
FIGS. 23(a), 23(b), 23(c), and 23(d) are schematic illustrations of charge distributions of states for GMOs according to embodiments of the present invention. …
FIG. 24 shows the effective masses for electrons and holes as a function of the angle a. The electron effective masses changed dramatically when GMO switched …
FIG. 25(b) shows the (local) band structure of the combined system in the middle of the graphene region and k-projected ("unfolded") onto the graphene 1x1 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A composition of graphene-based nanomaterials, the composition comprising: at least one atomic layer of graphene monoxide, wherein the graphene monoxide is crystallographically ordered at least in part and configured to form a plurality of diffraction rings when probed by an incident electron beam.
The composition of claim 1, f u rther comprising at least one atomic layer of graphene.
The composition of claim 1, further comprising a nanocrystalline oxide or carbide.
A nanostructure comprising graphene-based nanomaterials according to claim 1, wherein the nanostructure is configured to support at least one of a metal or metal oxide atom, cluster, and nanocrystal.
A gas sensor comprising: (a) one or more electrodes formed on a substrate and adapted to be operatively connected to a meter to measure an electrical characteristic between the electrodes; (b) one or more nanostructures in contact with the one or more electrodes; and (c) one or more nanoparticles deposited on the nanostructures, wherein the nanoparticles include the graphene-based nanomaterials according to claim 1.
Attorney Docket No. 020871-9085 US Ol
Attorney Docket No. 020871-9085 US Ol
Attorney Docket No. 020871-9085 US Ol
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
A carbon-based precursor (graphene oxide) is dissolved in water to form a precursor suspension. The suspension is placed onto a substrate to form a precursor assembly. The assembly is annealed under vacuum or partial pressures of water vapor, forming crystallographically ordered graphene-based nanomaterials (including graphene monoxide, GMO) that exhibit diffraction rings under electron beam probing. Annealing beyond 500°C results in visible GMO diffraction disks; beyond 800°C monolayer GO transforms to GMO.
Layer stacks claimed or described, ordered top of device to substrate.
graphene monoxide nanostructure supporting metal or metal oxide
gas sensor
Materials described outside the worked examples.
graphene
C
nanocrystalline oxide or carbide
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a schematic illustration of an evolution of electron diffraction patterns with temperature of a graphene oxide (GO) sample according to an embodiment …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | — | GMO |
Pressure | 1e-7 torr |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,236,633Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of a graphene monoxide (GMO) according to an embodiment of the present invention. [0010]
FIG. 2 is a schematic illustration of a lithium-ion battery including an anode with graphene-based nanomaterials prepared according to an embodiment of the …
FIG. 3 is a schematic illustration of an evolution of electron diffraction patterns with temperature of a graphene oxide (GO) sample according to an embodiment …
FIGS. 4(a), 4(b), 4(c), and 4(d) are graphs plotting normal incidence (NI) infrared absorbance spectra of (a) unreduced graphene oxide, (b) thermally reduced …
FIGS. 5(a), 5(b), and 5(c) are schematic illustrations of a GMO and its molecular vibration modes according to an embodiment of the present invention. [0014]
FIG. 6(b), high frequency components of the image beyond the lattice resolution of the microscope were filtered out. In the diffractogram of this region, two …
FIG. 7, a direct band gap of approximately 0.9 eV is shown at the X point of a GMO according to an embodiment of the present invention. The size (and …
FIG. 8). Analysis of the relative intensities showed that the {100} type reflections produced a greater diffracted intensity than the { 11 0} reflections, …
FIG. 9) recorded at higher scattering angles (i.e., smaller lattice spacing), indicated weaker higher order rings consistent with crystalline graphene. In …
FIG. 10 is a graph plotting SA E D temperature-dependent fitting parameters of GO/graphene and GMO diffraction peaks according to embodiments of the present …
FIG. 11). [0070] The atomic resolution HRTEM image in
FIG. 12 is a current-voltage graph of a TRG-O according to an embodiment of the present invention. [0021]
FIG. 13, alpha phase GMO was first observed at 550 ° C. Graphene was also observed along with molybdenum dioxide at 600 ° C, with and without electron beam …
FIG.14, in addition to diffraction rings that are typical of GMO spacings, also called 2D alpha phase in our lab books, spots are also seen that correspond to …
FIG. 15, the resulting cast and grid were subjected to vacuum at approximately 1. 3x 10 5 Pa and heated inside the TEM while monitored using SA E D. Graphene …
FIG. 16 (b), there was a hint of formation of rings Ring A (0.272nm) and B (0.16 1n m), which are equivalent to Ring III (0.260 nm) and Ring IV (0.152 nm), but …
FIG. 17 (e), an additional 10 minutes annealing showed stronger g r aphene monoxide rings (labeled III and IV), visible in many regions of the sample. …
FIGS. 18(a), 18(b), and 18(c) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a first region at 22 ° C, (b) of the first …
FIGS. 19(a) and 19(b) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a second region at 22 ° C and (b) of the second …
FIGS. 20(a) and 20(b) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a first region at 22 ° C and (b) of the first region …
FIGS. 21(a) and 21(b) are schematic illustrations of a GMO according to an embodiment of the present invention. [0030]
FIG. 22(a). For the fully optimized structure, GMO is a semiconductor with a calculated indirect band gap of approximately 0.6 eV. Upon planar deformation, GMO …
FIGS. 23(a), 23(b), 23(c), and 23(d) are schematic illustrations of charge distributions of states for GMOs according to embodiments of the present invention. …
FIG. 24 shows the effective masses for electrons and holes as a function of the angle a. The electron effective masses changed dramatically when GMO switched …
FIG. 25(b) shows the (local) band structure of the combined system in the middle of the graphene region and k-projected ("unfolded") onto the graphene 1x1 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A composition of graphene-based nanomaterials, the composition comprising: at least one atomic layer of graphene monoxide, wherein the graphene monoxide is crystallographically ordered at least in part and configured to form a plurality of diffraction rings when probed by an incident electron beam.
The composition of claim 1, f u rther comprising at least one atomic layer of graphene.
The composition of claim 1, further comprising a nanocrystalline oxide or carbide.
A nanostructure comprising graphene-based nanomaterials according to claim 1, wherein the nanostructure is configured to support at least one of a metal or metal oxide atom, cluster, and nanocrystal.
A gas sensor comprising: (a) one or more electrodes formed on a substrate and adapted to be operatively connected to a meter to measure an electrical characteristic between the electrodes; (b) one or more nanostructures in contact with the one or more electrodes; and (c) one or more nanoparticles deposited on the nanostructures, wherein the nanoparticles include the graphene-based nanomaterials according to claim 1.
Attorney Docket No. 020871-9085 US Ol
Attorney Docket No. 020871-9085 US Ol
Attorney Docket No. 020871-9085 US Ol
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
A carbon-based precursor (graphene oxide) is dissolved in water to form a precursor suspension. The suspension is placed onto a substrate to form a precursor assembly. The assembly is annealed under vacuum or partial pressures of water vapor, forming crystallographically ordered graphene-based nanomaterials (including graphene monoxide, GMO) that exhibit diffraction rings under electron beam probing. Annealing beyond 500°C results in visible GMO diffraction disks; beyond 800°C monolayer GO transforms to GMO.
Layer stacks claimed or described, ordered top of device to substrate.
graphene monoxide nanostructure supporting metal or metal oxide
gas sensor
Materials described outside the worked examples.
graphene
C
nanocrystalline oxide or carbide
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a schematic illustration of an evolution of electron diffraction patterns with temperature of a graphene oxide (GO) sample according to an embodiment …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | — | GMO |
Pressure | 1e-7 torr |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,236,633Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of a graphene monoxide (GMO) according to an embodiment of the present invention. [0010]
FIG. 2 is a schematic illustration of a lithium-ion battery including an anode with graphene-based nanomaterials prepared according to an embodiment of the …
FIG. 3 is a schematic illustration of an evolution of electron diffraction patterns with temperature of a graphene oxide (GO) sample according to an embodiment …
FIGS. 4(a), 4(b), 4(c), and 4(d) are graphs plotting normal incidence (NI) infrared absorbance spectra of (a) unreduced graphene oxide, (b) thermally reduced …
FIGS. 5(a), 5(b), and 5(c) are schematic illustrations of a GMO and its molecular vibration modes according to an embodiment of the present invention. [0014]
FIG. 6(b), high frequency components of the image beyond the lattice resolution of the microscope were filtered out. In the diffractogram of this region, two …
FIG. 7, a direct band gap of approximately 0.9 eV is shown at the X point of a GMO according to an embodiment of the present invention. The size (and …
FIG. 8). Analysis of the relative intensities showed that the {100} type reflections produced a greater diffracted intensity than the { 11 0} reflections, …
FIG. 9) recorded at higher scattering angles (i.e., smaller lattice spacing), indicated weaker higher order rings consistent with crystalline graphene. In …
FIG. 10 is a graph plotting SA E D temperature-dependent fitting parameters of GO/graphene and GMO diffraction peaks according to embodiments of the present …
FIG. 11). [0070] The atomic resolution HRTEM image in
FIG. 12 is a current-voltage graph of a TRG-O according to an embodiment of the present invention. [0021]
FIG. 13, alpha phase GMO was first observed at 550 ° C. Graphene was also observed along with molybdenum dioxide at 600 ° C, with and without electron beam …
FIG.14, in addition to diffraction rings that are typical of GMO spacings, also called 2D alpha phase in our lab books, spots are also seen that correspond to …
FIG. 15, the resulting cast and grid were subjected to vacuum at approximately 1. 3x 10 5 Pa and heated inside the TEM while monitored using SA E D. Graphene …
FIG. 16 (b), there was a hint of formation of rings Ring A (0.272nm) and B (0.16 1n m), which are equivalent to Ring III (0.260 nm) and Ring IV (0.152 nm), but …
FIG. 17 (e), an additional 10 minutes annealing showed stronger g r aphene monoxide rings (labeled III and IV), visible in many regions of the sample. …
FIGS. 18(a), 18(b), and 18(c) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a first region at 22 ° C, (b) of the first …
FIGS. 19(a) and 19(b) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a second region at 22 ° C and (b) of the second …
FIGS. 20(a) and 20(b) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a first region at 22 ° C and (b) of the first region …
FIGS. 21(a) and 21(b) are schematic illustrations of a GMO according to an embodiment of the present invention. [0030]
FIG. 22(a). For the fully optimized structure, GMO is a semiconductor with a calculated indirect band gap of approximately 0.6 eV. Upon planar deformation, GMO …
FIGS. 23(a), 23(b), 23(c), and 23(d) are schematic illustrations of charge distributions of states for GMOs according to embodiments of the present invention. …
FIG. 24 shows the effective masses for electrons and holes as a function of the angle a. The electron effective masses changed dramatically when GMO switched …
FIG. 25(b) shows the (local) band structure of the combined system in the middle of the graphene region and k-projected ("unfolded") onto the graphene 1x1 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A composition of graphene-based nanomaterials, the composition comprising: at least one atomic layer of graphene monoxide, wherein the graphene monoxide is crystallographically ordered at least in part and configured to form a plurality of diffraction rings when probed by an incident electron beam.
The composition of claim 1, f u rther comprising at least one atomic layer of graphene.
The composition of claim 1, further comprising a nanocrystalline oxide or carbide.
A nanostructure comprising graphene-based nanomaterials according to claim 1, wherein the nanostructure is configured to support at least one of a metal or metal oxide atom, cluster, and nanocrystal.
A gas sensor comprising: (a) one or more electrodes formed on a substrate and adapted to be operatively connected to a meter to measure an electrical characteristic between the electrodes; (b) one or more nanostructures in contact with the one or more electrodes; and (c) one or more nanoparticles deposited on the nanostructures, wherein the nanoparticles include the graphene-based nanomaterials according to claim 1.
Attorney Docket No. 020871-9085 US Ol
Attorney Docket No. 020871-9085 US Ol
Attorney Docket No. 020871-9085 US Ol
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
A carbon-based precursor (graphene oxide) is dissolved in water to form a precursor suspension. The suspension is placed onto a substrate to form a precursor assembly. The assembly is annealed under vacuum or partial pressures of water vapor, forming crystallographically ordered graphene-based nanomaterials (including graphene monoxide, GMO) that exhibit diffraction rings under electron beam probing. Annealing beyond 500°C results in visible GMO diffraction disks; beyond 800°C monolayer GO transforms to GMO.
Layer stacks claimed or described, ordered top of device to substrate.
graphene monoxide nanostructure supporting metal or metal oxide
gas sensor
Materials described outside the worked examples.
graphene
C
nanocrystalline oxide or carbide
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a schematic illustration of an evolution of electron diffraction patterns with temperature of a graphene oxide (GO) sample according to an embodiment …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | — | GMO |
Pressure | 1e-7 torr |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,236,633Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of a graphene monoxide (GMO) according to an embodiment of the present invention. [0010]
FIG. 2 is a schematic illustration of a lithium-ion battery including an anode with graphene-based nanomaterials prepared according to an embodiment of the …
FIG. 3 is a schematic illustration of an evolution of electron diffraction patterns with temperature of a graphene oxide (GO) sample according to an embodiment …
FIGS. 4(a), 4(b), 4(c), and 4(d) are graphs plotting normal incidence (NI) infrared absorbance spectra of (a) unreduced graphene oxide, (b) thermally reduced …
FIGS. 5(a), 5(b), and 5(c) are schematic illustrations of a GMO and its molecular vibration modes according to an embodiment of the present invention. [0014]
FIG. 6(b), high frequency components of the image beyond the lattice resolution of the microscope were filtered out. In the diffractogram of this region, two …
FIG. 7, a direct band gap of approximately 0.9 eV is shown at the X point of a GMO according to an embodiment of the present invention. The size (and …
FIG. 8). Analysis of the relative intensities showed that the {100} type reflections produced a greater diffracted intensity than the { 11 0} reflections, …
FIG. 9) recorded at higher scattering angles (i.e., smaller lattice spacing), indicated weaker higher order rings consistent with crystalline graphene. In …
FIG. 10 is a graph plotting SA E D temperature-dependent fitting parameters of GO/graphene and GMO diffraction peaks according to embodiments of the present …
FIG. 11). [0070] The atomic resolution HRTEM image in
FIG. 12 is a current-voltage graph of a TRG-O according to an embodiment of the present invention. [0021]
FIG. 13, alpha phase GMO was first observed at 550 ° C. Graphene was also observed along with molybdenum dioxide at 600 ° C, with and without electron beam …
FIG.14, in addition to diffraction rings that are typical of GMO spacings, also called 2D alpha phase in our lab books, spots are also seen that correspond to …
FIG. 15, the resulting cast and grid were subjected to vacuum at approximately 1. 3x 10 5 Pa and heated inside the TEM while monitored using SA E D. Graphene …
FIG. 16 (b), there was a hint of formation of rings Ring A (0.272nm) and B (0.16 1n m), which are equivalent to Ring III (0.260 nm) and Ring IV (0.152 nm), but …
FIG. 17 (e), an additional 10 minutes annealing showed stronger g r aphene monoxide rings (labeled III and IV), visible in many regions of the sample. …
FIGS. 18(a), 18(b), and 18(c) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a first region at 22 ° C, (b) of the first …
FIGS. 19(a) and 19(b) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a second region at 22 ° C and (b) of the second …
FIGS. 20(a) and 20(b) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a first region at 22 ° C and (b) of the first region …
FIGS. 21(a) and 21(b) are schematic illustrations of a GMO according to an embodiment of the present invention. [0030]
FIG. 22(a). For the fully optimized structure, GMO is a semiconductor with a calculated indirect band gap of approximately 0.6 eV. Upon planar deformation, GMO …
FIGS. 23(a), 23(b), 23(c), and 23(d) are schematic illustrations of charge distributions of states for GMOs according to embodiments of the present invention. …
FIG. 24 shows the effective masses for electrons and holes as a function of the angle a. The electron effective masses changed dramatically when GMO switched …
FIG. 25(b) shows the (local) band structure of the combined system in the middle of the graphene region and k-projected ("unfolded") onto the graphene 1x1 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A composition of graphene-based nanomaterials, the composition comprising: at least one atomic layer of graphene monoxide, wherein the graphene monoxide is crystallographically ordered at least in part and configured to form a plurality of diffraction rings when probed by an incident electron beam.
The composition of claim 1, f u rther comprising at least one atomic layer of graphene.
The composition of claim 1, further comprising a nanocrystalline oxide or carbide.
A nanostructure comprising graphene-based nanomaterials according to claim 1, wherein the nanostructure is configured to support at least one of a metal or metal oxide atom, cluster, and nanocrystal.
A gas sensor comprising: (a) one or more electrodes formed on a substrate and adapted to be operatively connected to a meter to measure an electrical characteristic between the electrodes; (b) one or more nanostructures in contact with the one or more electrodes; and (c) one or more nanoparticles deposited on the nanostructures, wherein the nanoparticles include the graphene-based nanomaterials according to claim 1.
Attorney Docket No. 020871-9085 US Ol
Attorney Docket No. 020871-9085 US Ol
Attorney Docket No. 020871-9085 US Ol
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
A carbon-based precursor (graphene oxide) is dissolved in water to form a precursor suspension. The suspension is placed onto a substrate to form a precursor assembly. The assembly is annealed under vacuum or partial pressures of water vapor, forming crystallographically ordered graphene-based nanomaterials (including graphene monoxide, GMO) that exhibit diffraction rings under electron beam probing. Annealing beyond 500°C results in visible GMO diffraction disks; beyond 800°C monolayer GO transforms to GMO.
Layer stacks claimed or described, ordered top of device to substrate.
graphene monoxide nanostructure supporting metal or metal oxide
gas sensor
Materials described outside the worked examples.
graphene
C
nanocrystalline oxide or carbide
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a schematic illustration of an evolution of electron diffraction patterns with temperature of a graphene oxide (GO) sample according to an embodiment …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | — | GMO |
Pressure | 1e-7 torr |
Related documents with shared materials, methods, properties, or citations.
transition metal oxide
transition metal carbide
molybdenum oxide
MoO₃
FIG. 3 is a schematic illustration of an evolution of electron diffraction patterns with temperature of a graphene oxide (GO) sample according to an embodiment …
FIG. 3 is a schematic illustration of an evolution of electron diffraction patterns with temperature of a graphene oxide (GO) sample according to an embodiment …
FIGS. 4(a), 4(b), 4(c), and 4(d) are graphs plotting normal incidence (NI) infrared absorbance spectra of (a) unreduced graphene oxide, (b) thermally reduced …
FIGS. 4(a), 4(b), 4(c), and 4(d) are graphs plotting normal incidence (NI) infrared absorbance spectra of (a) unreduced graphene oxide, (b) thermally reduced …
FIG. 6(b), high frequency components of the image beyond the lattice resolution of the microscope were filtered out. In the diffractogram of this region, two …
FIG. 7, a direct band gap of approximately 0.9 eV is shown at the X point of a GMO according to an embodiment of the present invention. The size (and …
FIG. 7, a direct band gap of approximately 0.9 eV is shown at the X point of a GMO according to an embodiment of the present invention. The size (and …
FIG. 7, a direct band gap of approximately 0.9 eV is shown at the X point of a GMO according to an embodiment of the present invention. The size (and …
FIG. 11). [0070] The atomic resolution HRTEM image in
FIG. 12 is a current-voltage graph of a TRG-O according to an embodiment of the present invention. [0021]
FIG. 15, the resulting cast and grid were subjected to vacuum at approximately 1. 3x 10 5 Pa and heated inside the TEM while monitored using SA E D. Graphene …
FIG. 16 (b), there was a hint of formation of rings Ring A (0.272nm) and B (0.16 1n m), which are equivalent to Ring III (0.260 nm) and Ring IV (0.152 nm), but …
FIG. 17 (e), an additional 10 minutes annealing showed stronger g r aphene monoxide rings (labeled III and IV), visible in many regions of the sample. …
FIGS. 18(a), 18(b), and 18(c) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a first region at 22 ° C, (b) of the first …
FIGS. 19(a) and 19(b) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a second region at 22 ° C and (b) of the second …
FIGS. 20(a) and 20(b) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a first region at 22 ° C and (b) of the first region …
FIG. 22(a). For the fully optimized structure, GMO is a semiconductor with a calculated indirect band gap of approximately 0.6 eV. Upon planar deformation, GMO …
FIG. 22(a). For the fully optimized structure, GMO is a semiconductor with a calculated indirect band gap of approximately 0.6 eV. Upon planar deformation, GMO …
FIG. 25(b) shows the (local) band structure of the combined system in the middle of the graphene region and k-projected ("unfolded") onto the graphene 1x1 …
FIG. 25(b) shows the (local) band structure of the combined system in the middle of the graphene region and k-projected ("unfolded") onto the graphene 1x1 …
| — |
Pressure | 0.00001 Pa | — |
Thickness | 3300–3600 cm | — |
— | 0.18–0.21 eV | — |
Pressure | 13–1330 Pa | — |
— | 0.2–0.5 eV | — |
Temperature | ≥ 1200 °C | — |
Thickness | 0.305–0.31 nm | — |
— | 0–1.35 eV | — |
— | 0.1–1.35 eV | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 50 nm | — |
— | ≥ 1 eV | — |
— | ≥ 0.1 eV | — |
— | ≥ 0.2 eV | — |
— | ≥ 0.3 eV | — |
— | ≥ 0.4 eV | — |
— | ≥ 0.5 eV | — |
— | ≥ 0.6 eV | — |
— | ≥ 0.7 eV | — |
— | ≥ 0.8 eV | — |
— | ≥ 0.9 eV | — |
transition metal oxide
transition metal carbide
molybdenum oxide
MoO₃
FIG. 3 is a schematic illustration of an evolution of electron diffraction patterns with temperature of a graphene oxide (GO) sample according to an embodiment …
FIG. 3 is a schematic illustration of an evolution of electron diffraction patterns with temperature of a graphene oxide (GO) sample according to an embodiment …
FIGS. 4(a), 4(b), 4(c), and 4(d) are graphs plotting normal incidence (NI) infrared absorbance spectra of (a) unreduced graphene oxide, (b) thermally reduced …
FIGS. 4(a), 4(b), 4(c), and 4(d) are graphs plotting normal incidence (NI) infrared absorbance spectra of (a) unreduced graphene oxide, (b) thermally reduced …
FIG. 6(b), high frequency components of the image beyond the lattice resolution of the microscope were filtered out. In the diffractogram of this region, two …
FIG. 7, a direct band gap of approximately 0.9 eV is shown at the X point of a GMO according to an embodiment of the present invention. The size (and …
FIG. 7, a direct band gap of approximately 0.9 eV is shown at the X point of a GMO according to an embodiment of the present invention. The size (and …
FIG. 7, a direct band gap of approximately 0.9 eV is shown at the X point of a GMO according to an embodiment of the present invention. The size (and …
FIG. 11). [0070] The atomic resolution HRTEM image in
FIG. 12 is a current-voltage graph of a TRG-O according to an embodiment of the present invention. [0021]
FIG. 15, the resulting cast and grid were subjected to vacuum at approximately 1. 3x 10 5 Pa and heated inside the TEM while monitored using SA E D. Graphene …
FIG. 16 (b), there was a hint of formation of rings Ring A (0.272nm) and B (0.16 1n m), which are equivalent to Ring III (0.260 nm) and Ring IV (0.152 nm), but …
FIG. 17 (e), an additional 10 minutes annealing showed stronger g r aphene monoxide rings (labeled III and IV), visible in many regions of the sample. …
FIGS. 18(a), 18(b), and 18(c) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a first region at 22 ° C, (b) of the first …
FIGS. 19(a) and 19(b) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a second region at 22 ° C and (b) of the second …
FIGS. 20(a) and 20(b) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a first region at 22 ° C and (b) of the first region …
FIG. 22(a). For the fully optimized structure, GMO is a semiconductor with a calculated indirect band gap of approximately 0.6 eV. Upon planar deformation, GMO …
FIG. 22(a). For the fully optimized structure, GMO is a semiconductor with a calculated indirect band gap of approximately 0.6 eV. Upon planar deformation, GMO …
FIG. 25(b) shows the (local) band structure of the combined system in the middle of the graphene region and k-projected ("unfolded") onto the graphene 1x1 …
FIG. 25(b) shows the (local) band structure of the combined system in the middle of the graphene region and k-projected ("unfolded") onto the graphene 1x1 …
| — |
Pressure | 0.00001 Pa | — |
Thickness | 3300–3600 cm | — |
— | 0.18–0.21 eV | — |
Pressure | 13–1330 Pa | — |
— | 0.2–0.5 eV | — |
Temperature | ≥ 1200 °C | — |
Thickness | 0.305–0.31 nm | — |
— | 0–1.35 eV | — |
— | 0.1–1.35 eV | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 50 nm | — |
— | ≥ 1 eV | — |
— | ≥ 0.1 eV | — |
— | ≥ 0.2 eV | — |
— | ≥ 0.3 eV | — |
— | ≥ 0.4 eV | — |
— | ≥ 0.5 eV | — |
— | ≥ 0.6 eV | — |
— | ≥ 0.7 eV | — |
— | ≥ 0.8 eV | — |
— | ≥ 0.9 eV | — |
transition metal oxide
transition metal carbide
molybdenum oxide
MoO₃
FIG. 3 is a schematic illustration of an evolution of electron diffraction patterns with temperature of a graphene oxide (GO) sample according to an embodiment …
FIG. 3 is a schematic illustration of an evolution of electron diffraction patterns with temperature of a graphene oxide (GO) sample according to an embodiment …
FIGS. 4(a), 4(b), 4(c), and 4(d) are graphs plotting normal incidence (NI) infrared absorbance spectra of (a) unreduced graphene oxide, (b) thermally reduced …
FIGS. 4(a), 4(b), 4(c), and 4(d) are graphs plotting normal incidence (NI) infrared absorbance spectra of (a) unreduced graphene oxide, (b) thermally reduced …
FIG. 6(b), high frequency components of the image beyond the lattice resolution of the microscope were filtered out. In the diffractogram of this region, two …
FIG. 7, a direct band gap of approximately 0.9 eV is shown at the X point of a GMO according to an embodiment of the present invention. The size (and …
FIG. 7, a direct band gap of approximately 0.9 eV is shown at the X point of a GMO according to an embodiment of the present invention. The size (and …
FIG. 7, a direct band gap of approximately 0.9 eV is shown at the X point of a GMO according to an embodiment of the present invention. The size (and …
FIG. 11). [0070] The atomic resolution HRTEM image in
FIG. 12 is a current-voltage graph of a TRG-O according to an embodiment of the present invention. [0021]
FIG. 15, the resulting cast and grid were subjected to vacuum at approximately 1. 3x 10 5 Pa and heated inside the TEM while monitored using SA E D. Graphene …
FIG. 16 (b), there was a hint of formation of rings Ring A (0.272nm) and B (0.16 1n m), which are equivalent to Ring III (0.260 nm) and Ring IV (0.152 nm), but …
FIG. 17 (e), an additional 10 minutes annealing showed stronger g r aphene monoxide rings (labeled III and IV), visible in many regions of the sample. …
FIGS. 18(a), 18(b), and 18(c) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a first region at 22 ° C, (b) of the first …
FIGS. 19(a) and 19(b) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a second region at 22 ° C and (b) of the second …
FIGS. 20(a) and 20(b) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a first region at 22 ° C and (b) of the first region …
FIG. 22(a). For the fully optimized structure, GMO is a semiconductor with a calculated indirect band gap of approximately 0.6 eV. Upon planar deformation, GMO …
FIG. 22(a). For the fully optimized structure, GMO is a semiconductor with a calculated indirect band gap of approximately 0.6 eV. Upon planar deformation, GMO …
FIG. 25(b) shows the (local) band structure of the combined system in the middle of the graphene region and k-projected ("unfolded") onto the graphene 1x1 …
FIG. 25(b) shows the (local) band structure of the combined system in the middle of the graphene region and k-projected ("unfolded") onto the graphene 1x1 …
| — |
Pressure | 0.00001 Pa | — |
Thickness | 3300–3600 cm | — |
— | 0.18–0.21 eV | — |
Pressure | 13–1330 Pa | — |
— | 0.2–0.5 eV | — |
Temperature | ≥ 1200 °C | — |
Thickness | 0.305–0.31 nm | — |
— | 0–1.35 eV | — |
— | 0.1–1.35 eV | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 50 nm | — |
— | ≥ 1 eV | — |
— | ≥ 0.1 eV | — |
— | ≥ 0.2 eV | — |
— | ≥ 0.3 eV | — |
— | ≥ 0.4 eV | — |
— | ≥ 0.5 eV | — |
— | ≥ 0.6 eV | — |
— | ≥ 0.7 eV | — |
— | ≥ 0.8 eV | — |
— | ≥ 0.9 eV | — |
transition metal oxide
transition metal carbide
molybdenum oxide
MoO₃
FIG. 3 is a schematic illustration of an evolution of electron diffraction patterns with temperature of a graphene oxide (GO) sample according to an embodiment …
FIG. 3 is a schematic illustration of an evolution of electron diffraction patterns with temperature of a graphene oxide (GO) sample according to an embodiment …
FIGS. 4(a), 4(b), 4(c), and 4(d) are graphs plotting normal incidence (NI) infrared absorbance spectra of (a) unreduced graphene oxide, (b) thermally reduced …
FIGS. 4(a), 4(b), 4(c), and 4(d) are graphs plotting normal incidence (NI) infrared absorbance spectra of (a) unreduced graphene oxide, (b) thermally reduced …
FIG. 6(b), high frequency components of the image beyond the lattice resolution of the microscope were filtered out. In the diffractogram of this region, two …
FIG. 7, a direct band gap of approximately 0.9 eV is shown at the X point of a GMO according to an embodiment of the present invention. The size (and …
FIG. 7, a direct band gap of approximately 0.9 eV is shown at the X point of a GMO according to an embodiment of the present invention. The size (and …
FIG. 7, a direct band gap of approximately 0.9 eV is shown at the X point of a GMO according to an embodiment of the present invention. The size (and …
FIG. 11). [0070] The atomic resolution HRTEM image in
FIG. 12 is a current-voltage graph of a TRG-O according to an embodiment of the present invention. [0021]
FIG. 15, the resulting cast and grid were subjected to vacuum at approximately 1. 3x 10 5 Pa and heated inside the TEM while monitored using SA E D. Graphene …
FIG. 16 (b), there was a hint of formation of rings Ring A (0.272nm) and B (0.16 1n m), which are equivalent to Ring III (0.260 nm) and Ring IV (0.152 nm), but …
FIG. 17 (e), an additional 10 minutes annealing showed stronger g r aphene monoxide rings (labeled III and IV), visible in many regions of the sample. …
FIGS. 18(a), 18(b), and 18(c) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a first region at 22 ° C, (b) of the first …
FIGS. 19(a) and 19(b) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a second region at 22 ° C and (b) of the second …
FIGS. 20(a) and 20(b) are SAED patterns of a GMO according to an embodiment of the present invention (a) of a first region at 22 ° C and (b) of the first region …
FIG. 22(a). For the fully optimized structure, GMO is a semiconductor with a calculated indirect band gap of approximately 0.6 eV. Upon planar deformation, GMO …
FIG. 22(a). For the fully optimized structure, GMO is a semiconductor with a calculated indirect band gap of approximately 0.6 eV. Upon planar deformation, GMO …
FIG. 25(b) shows the (local) band structure of the combined system in the middle of the graphene region and k-projected ("unfolded") onto the graphene 1x1 …
FIG. 25(b) shows the (local) band structure of the combined system in the middle of the graphene region and k-projected ("unfolded") onto the graphene 1x1 …
| — |
Pressure | 0.00001 Pa | — |
Thickness | 3300–3600 cm | — |
— | 0.18–0.21 eV | — |
Pressure | 13–1330 Pa | — |
— | 0.2–0.5 eV | — |
Temperature | ≥ 1200 °C | — |
Thickness | 0.305–0.31 nm | — |
— | 0–1.35 eV | — |
— | 0.1–1.35 eV | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 50 nm | — |
— | ≥ 1 eV | — |
— | ≥ 0.1 eV | — |
— | ≥ 0.2 eV | — |
— | ≥ 0.3 eV | — |
— | ≥ 0.4 eV | — |
— | ≥ 0.5 eV | — |
— | ≥ 0.6 eV | — |
— | ≥ 0.7 eV | — |
— | ≥ 0.8 eV | — |
— | ≥ 0.9 eV | — |