Patent
US 9,786,797ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THEREOF
Naoki HARADA
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,786,797Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an exemplary heterojunction; [0009]
FIG. 2B illustrate an exemplary band of a heterojunction backward diode; [0010]
FIG. 3B illustrate exemplary AGNR structure and calculation result of band structure; [0011]
FIG. 4 illustrates exemplary calculation results of an AGNR band line up; [0012]
FIG. 5 illustrates an exemplary F-terminated AGNR structure; [0013]
FIG. 6 illustrates an exemplary plan view of a heterojunction backward diode; [0014]
FIG. 7 illustrates exemplary width dependency in an H-terminated GNR band gap; [0015]
FIG. 8B illustrate an exemplary plan view of a cathode electrode and an anode electrode; 2 Atty. Dkt. No. 15-01708 [0016]
FIG. 9 illustrates an exemplary plan view of a heterojunction backward diode; [0017]
FIG. 10 C illustrates an exemplary current and voltage characteristics of the heterojunction backward diode used in the computer simulation. [0019]
FIG. 11 illustrates an exemplary equivalent circuit used in equivalent circuit analysis; and [0020]
FIG. 12E illustrate an exemplary method of manufacturing a heterojunction backward diode.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device, comprising: a graphene nanoribbon having a first graphene and a second graphene; a first electrode coupled to the first graphene; and a second electrode coupled to the second graphene, wherein the first graphene is terminated on an edge by a first terminal group, includes an n-type doping layer layered on a first portion of a surface of the graphene nanoribbon and has an n-type a first polarity and the second graphene is terminated on an edge by a second terminal group different to the first terminal group, includes one of a second portion of the surface of the graphene nanoribbon exposed to the atmosphere and a p-type doping layer layered on the second portion of the surface of the graphene nanoribbon and has a p-type sccond polarity different from the first polarity.
The electronic device according to claim 1, wherein the first polarity of the first graphcnc is n-typc and the sccond polarity of the sccond graphcnc is p-typc and electron affinity of the first graphene is greater than electron affinity of the second graphene.
The electronic device according to claim 1, wherein the first graphene and the second graphene include 2 to 43 carbon atoms in the short direction. 3 PATENT Fujitsu Ref.: 15-01708 App. Ser. No.: 15/238,973
The electronic device according to claim 1, wherein the combination of the first terminal group of the first graphene and the second terminal group of the second graphene is one selected from (F, H), (C I, H), (F, OH), (C I, OH), (F, NH 2), (CI, NH 2), (F, CH 3), (CI, CH 3), (H, NH 2), (OH, NH 2), (OH, CH 3), and (H, OH).
The electronic device according to claim 1, wherein the graphene nanoribbon has a third graphene coupled between the first graphene and the second graphene and the third graphene differs from the first graphene and the second graphene in at least one of a width in the short direction, the terminal group of the edge, and the polarity.
The electronic device according to claim 1, wherein an electrostatic capacitance is formed between the first electrode and the second electrode.
A method of manufacturing an electronic device, comprising: forming a graphene nanoribbon having a first graphene that is terminated on an edge by a first terminal group and has a first polarity and a second graphene that is terminated on an edge by a second terminal group different to the first terminal group and has a second polarity different to the first polarity; and forming a first electrode coupled to the first graphene and a second electrode coupled to the second graphene L wherein each of the first graphene and the second graphene are formed by one process of a first process in which each of the first graphene and the second graphene are formed as a p-type by exposing the graphene nanoribbon to the atmosphere or as an n-type by layering an n-type doping layer on a portion of a surface of the graphene nanoribbon and a second process in which each of the first graphene and the second graphene are formed as a p-type by layering a p-type doping layer on a portion of a surface of the graphene nanoribbon or as an n-type by layering an n-type doping layer on a portion of a surface of the graphene nanoribbon.
5 PATENT Fujitsu Ref.: 15-01708 App. Ser. No.: 15/238,973 The method according to claim 10, wherein the first polarity of the first graphene is n-type and the second polarity of the second graphene is p-type and electron affinity of the first graphene is greater than electron affinity of the second gra phene.
The method according to claim 10, wherein the first graphene and the second graphene include 2 to 43 carbon atoms in the short direction.
The method according to claim 10, wherein the combination of the first terminal group of the first graphene and the second terminal group of the second graphene is one selected from (F, H), (C I, H), (F, OH), (C I, OH), (F, NH 2), (CI, NH 2), (F, CH 3), (CI, CH 3), (H, NH 2), (OH, NH 2), (OH, CH 3), and (H, OH).
The method according to claim 10, wherein the graphene nanoribbon has a third graphene coupled between the first graphene and the second graphene and the third graphene differs from the first graphene and the second graphene in at least one of a width in the short direction, the terminal group of the edge, and the polarity.
The method according to claim 10, wherein an electrostatic capacitance is formed between the first electrode and the second electrode.
canceled
canceled
An electronic device, comprising: 6 PATENT Fujitsu Ref.: 15-01708 App. Ser. No.: 15/238,973 a graphene nanoribbon having a first graphene and a second graphene; a first electrode coupled to the first graphene; and a second electrode coupled to the second graphene, wherein the first graphene is terminated on an edge by a first terminal group and has a first polarity and the second graphene is terminated on an edge by a second terminal group different to the first terminal group and has a second polarity different from the first polarity, wherein an electrostatic capacitance is formed between the first electrode and the second electrode, wherein the total electrostatic capacitance present between the first electrode and the second electrode is q 2/2kT or higher where q is an elementary charge, k is a Boltzmann constant, and T is an operating temperature. 7
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon heterojunction backward diode (electronic device)
Materials described outside the worked examples.
first graphene (n-type, edge-terminated)
second graphene (p-type, edge-terminated)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3B illustrate exemplary AGNR structure and calculation result of band structure; [0011]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Band gap of N=7 H-terminated AGNR | 1.54 eV | H-terminated AGNR |
Thickness |
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COMPOUND, COMPOUND FABRICATION METHOD, AND GRAPHENE NANORIBBON FABRICATION METHOD
GRAPHENE NANORIBBON, GRAPHENE NANORIBBON FABRICATION METHOD, AND SEMICONDUCTOR DEVICE
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Atlas literature
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US 9,786,797Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an exemplary heterojunction; [0009]
FIG. 2B illustrate an exemplary band of a heterojunction backward diode; [0010]
FIG. 3B illustrate exemplary AGNR structure and calculation result of band structure; [0011]
FIG. 4 illustrates exemplary calculation results of an AGNR band line up; [0012]
FIG. 5 illustrates an exemplary F-terminated AGNR structure; [0013]
FIG. 6 illustrates an exemplary plan view of a heterojunction backward diode; [0014]
FIG. 7 illustrates exemplary width dependency in an H-terminated GNR band gap; [0015]
FIG. 8B illustrate an exemplary plan view of a cathode electrode and an anode electrode; 2 Atty. Dkt. No. 15-01708 [0016]
FIG. 9 illustrates an exemplary plan view of a heterojunction backward diode; [0017]
FIG. 10 C illustrates an exemplary current and voltage characteristics of the heterojunction backward diode used in the computer simulation. [0019]
FIG. 11 illustrates an exemplary equivalent circuit used in equivalent circuit analysis; and [0020]
FIG. 12E illustrate an exemplary method of manufacturing a heterojunction backward diode.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device, comprising: a graphene nanoribbon having a first graphene and a second graphene; a first electrode coupled to the first graphene; and a second electrode coupled to the second graphene, wherein the first graphene is terminated on an edge by a first terminal group, includes an n-type doping layer layered on a first portion of a surface of the graphene nanoribbon and has an n-type a first polarity and the second graphene is terminated on an edge by a second terminal group different to the first terminal group, includes one of a second portion of the surface of the graphene nanoribbon exposed to the atmosphere and a p-type doping layer layered on the second portion of the surface of the graphene nanoribbon and has a p-type sccond polarity different from the first polarity.
The electronic device according to claim 1, wherein the first polarity of the first graphcnc is n-typc and the sccond polarity of the sccond graphcnc is p-typc and electron affinity of the first graphene is greater than electron affinity of the second graphene.
The electronic device according to claim 1, wherein the first graphene and the second graphene include 2 to 43 carbon atoms in the short direction. 3 PATENT Fujitsu Ref.: 15-01708 App. Ser. No.: 15/238,973
The electronic device according to claim 1, wherein the combination of the first terminal group of the first graphene and the second terminal group of the second graphene is one selected from (F, H), (C I, H), (F, OH), (C I, OH), (F, NH 2), (CI, NH 2), (F, CH 3), (CI, CH 3), (H, NH 2), (OH, NH 2), (OH, CH 3), and (H, OH).
The electronic device according to claim 1, wherein the graphene nanoribbon has a third graphene coupled between the first graphene and the second graphene and the third graphene differs from the first graphene and the second graphene in at least one of a width in the short direction, the terminal group of the edge, and the polarity.
The electronic device according to claim 1, wherein an electrostatic capacitance is formed between the first electrode and the second electrode.
A method of manufacturing an electronic device, comprising: forming a graphene nanoribbon having a first graphene that is terminated on an edge by a first terminal group and has a first polarity and a second graphene that is terminated on an edge by a second terminal group different to the first terminal group and has a second polarity different to the first polarity; and forming a first electrode coupled to the first graphene and a second electrode coupled to the second graphene L wherein each of the first graphene and the second graphene are formed by one process of a first process in which each of the first graphene and the second graphene are formed as a p-type by exposing the graphene nanoribbon to the atmosphere or as an n-type by layering an n-type doping layer on a portion of a surface of the graphene nanoribbon and a second process in which each of the first graphene and the second graphene are formed as a p-type by layering a p-type doping layer on a portion of a surface of the graphene nanoribbon or as an n-type by layering an n-type doping layer on a portion of a surface of the graphene nanoribbon.
5 PATENT Fujitsu Ref.: 15-01708 App. Ser. No.: 15/238,973 The method according to claim 10, wherein the first polarity of the first graphene is n-type and the second polarity of the second graphene is p-type and electron affinity of the first graphene is greater than electron affinity of the second gra phene.
The method according to claim 10, wherein the first graphene and the second graphene include 2 to 43 carbon atoms in the short direction.
The method according to claim 10, wherein the combination of the first terminal group of the first graphene and the second terminal group of the second graphene is one selected from (F, H), (C I, H), (F, OH), (C I, OH), (F, NH 2), (CI, NH 2), (F, CH 3), (CI, CH 3), (H, NH 2), (OH, NH 2), (OH, CH 3), and (H, OH).
The method according to claim 10, wherein the graphene nanoribbon has a third graphene coupled between the first graphene and the second graphene and the third graphene differs from the first graphene and the second graphene in at least one of a width in the short direction, the terminal group of the edge, and the polarity.
The method according to claim 10, wherein an electrostatic capacitance is formed between the first electrode and the second electrode.
canceled
canceled
An electronic device, comprising: 6 PATENT Fujitsu Ref.: 15-01708 App. Ser. No.: 15/238,973 a graphene nanoribbon having a first graphene and a second graphene; a first electrode coupled to the first graphene; and a second electrode coupled to the second graphene, wherein the first graphene is terminated on an edge by a first terminal group and has a first polarity and the second graphene is terminated on an edge by a second terminal group different to the first terminal group and has a second polarity different from the first polarity, wherein an electrostatic capacitance is formed between the first electrode and the second electrode, wherein the total electrostatic capacitance present between the first electrode and the second electrode is q 2/2kT or higher where q is an elementary charge, k is a Boltzmann constant, and T is an operating temperature. 7
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon heterojunction backward diode (electronic device)
Materials described outside the worked examples.
first graphene (n-type, edge-terminated)
second graphene (p-type, edge-terminated)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3B illustrate exemplary AGNR structure and calculation result of band structure; [0011]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Band gap of N=7 H-terminated AGNR | 1.54 eV | H-terminated AGNR |
Thickness |
Related documents with shared materials, methods, properties, or citations.
COMPOUND, COMPOUND FABRICATION METHOD, AND GRAPHENE NANORIBBON FABRICATION METHOD
GRAPHENE NANORIBBON, GRAPHENE NANORIBBON FABRICATION METHOD, AND SEMICONDUCTOR DEVICE
Patent
Atlas literature
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US 9,786,797Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an exemplary heterojunction; [0009]
FIG. 2B illustrate an exemplary band of a heterojunction backward diode; [0010]
FIG. 3B illustrate exemplary AGNR structure and calculation result of band structure; [0011]
FIG. 4 illustrates exemplary calculation results of an AGNR band line up; [0012]
FIG. 5 illustrates an exemplary F-terminated AGNR structure; [0013]
FIG. 6 illustrates an exemplary plan view of a heterojunction backward diode; [0014]
FIG. 7 illustrates exemplary width dependency in an H-terminated GNR band gap; [0015]
FIG. 8B illustrate an exemplary plan view of a cathode electrode and an anode electrode; 2 Atty. Dkt. No. 15-01708 [0016]
FIG. 9 illustrates an exemplary plan view of a heterojunction backward diode; [0017]
FIG. 10 C illustrates an exemplary current and voltage characteristics of the heterojunction backward diode used in the computer simulation. [0019]
FIG. 11 illustrates an exemplary equivalent circuit used in equivalent circuit analysis; and [0020]
FIG. 12E illustrate an exemplary method of manufacturing a heterojunction backward diode.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device, comprising: a graphene nanoribbon having a first graphene and a second graphene; a first electrode coupled to the first graphene; and a second electrode coupled to the second graphene, wherein the first graphene is terminated on an edge by a first terminal group, includes an n-type doping layer layered on a first portion of a surface of the graphene nanoribbon and has an n-type a first polarity and the second graphene is terminated on an edge by a second terminal group different to the first terminal group, includes one of a second portion of the surface of the graphene nanoribbon exposed to the atmosphere and a p-type doping layer layered on the second portion of the surface of the graphene nanoribbon and has a p-type sccond polarity different from the first polarity.
The electronic device according to claim 1, wherein the first polarity of the first graphcnc is n-typc and the sccond polarity of the sccond graphcnc is p-typc and electron affinity of the first graphene is greater than electron affinity of the second graphene.
The electronic device according to claim 1, wherein the first graphene and the second graphene include 2 to 43 carbon atoms in the short direction. 3 PATENT Fujitsu Ref.: 15-01708 App. Ser. No.: 15/238,973
The electronic device according to claim 1, wherein the combination of the first terminal group of the first graphene and the second terminal group of the second graphene is one selected from (F, H), (C I, H), (F, OH), (C I, OH), (F, NH 2), (CI, NH 2), (F, CH 3), (CI, CH 3), (H, NH 2), (OH, NH 2), (OH, CH 3), and (H, OH).
The electronic device according to claim 1, wherein the graphene nanoribbon has a third graphene coupled between the first graphene and the second graphene and the third graphene differs from the first graphene and the second graphene in at least one of a width in the short direction, the terminal group of the edge, and the polarity.
The electronic device according to claim 1, wherein an electrostatic capacitance is formed between the first electrode and the second electrode.
A method of manufacturing an electronic device, comprising: forming a graphene nanoribbon having a first graphene that is terminated on an edge by a first terminal group and has a first polarity and a second graphene that is terminated on an edge by a second terminal group different to the first terminal group and has a second polarity different to the first polarity; and forming a first electrode coupled to the first graphene and a second electrode coupled to the second graphene L wherein each of the first graphene and the second graphene are formed by one process of a first process in which each of the first graphene and the second graphene are formed as a p-type by exposing the graphene nanoribbon to the atmosphere or as an n-type by layering an n-type doping layer on a portion of a surface of the graphene nanoribbon and a second process in which each of the first graphene and the second graphene are formed as a p-type by layering a p-type doping layer on a portion of a surface of the graphene nanoribbon or as an n-type by layering an n-type doping layer on a portion of a surface of the graphene nanoribbon.
5 PATENT Fujitsu Ref.: 15-01708 App. Ser. No.: 15/238,973 The method according to claim 10, wherein the first polarity of the first graphene is n-type and the second polarity of the second graphene is p-type and electron affinity of the first graphene is greater than electron affinity of the second gra phene.
The method according to claim 10, wherein the first graphene and the second graphene include 2 to 43 carbon atoms in the short direction.
The method according to claim 10, wherein the combination of the first terminal group of the first graphene and the second terminal group of the second graphene is one selected from (F, H), (C I, H), (F, OH), (C I, OH), (F, NH 2), (CI, NH 2), (F, CH 3), (CI, CH 3), (H, NH 2), (OH, NH 2), (OH, CH 3), and (H, OH).
The method according to claim 10, wherein the graphene nanoribbon has a third graphene coupled between the first graphene and the second graphene and the third graphene differs from the first graphene and the second graphene in at least one of a width in the short direction, the terminal group of the edge, and the polarity.
The method according to claim 10, wherein an electrostatic capacitance is formed between the first electrode and the second electrode.
canceled
canceled
An electronic device, comprising: 6 PATENT Fujitsu Ref.: 15-01708 App. Ser. No.: 15/238,973 a graphene nanoribbon having a first graphene and a second graphene; a first electrode coupled to the first graphene; and a second electrode coupled to the second graphene, wherein the first graphene is terminated on an edge by a first terminal group and has a first polarity and the second graphene is terminated on an edge by a second terminal group different to the first terminal group and has a second polarity different from the first polarity, wherein an electrostatic capacitance is formed between the first electrode and the second electrode, wherein the total electrostatic capacitance present between the first electrode and the second electrode is q 2/2kT or higher where q is an elementary charge, k is a Boltzmann constant, and T is an operating temperature. 7
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon heterojunction backward diode (electronic device)
Materials described outside the worked examples.
first graphene (n-type, edge-terminated)
second graphene (p-type, edge-terminated)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3B illustrate exemplary AGNR structure and calculation result of band structure; [0011]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Band gap of N=7 H-terminated AGNR | 1.54 eV | H-terminated AGNR |
Thickness |
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COMPOUND, COMPOUND FABRICATION METHOD, AND GRAPHENE NANORIBBON FABRICATION METHOD
GRAPHENE NANORIBBON, GRAPHENE NANORIBBON FABRICATION METHOD, AND SEMICONDUCTOR DEVICE
Patent
Atlas literature
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US 9,786,797Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates an exemplary heterojunction; [0009]
FIG. 2B illustrate an exemplary band of a heterojunction backward diode; [0010]
FIG. 3B illustrate exemplary AGNR structure and calculation result of band structure; [0011]
FIG. 4 illustrates exemplary calculation results of an AGNR band line up; [0012]
FIG. 5 illustrates an exemplary F-terminated AGNR structure; [0013]
FIG. 6 illustrates an exemplary plan view of a heterojunction backward diode; [0014]
FIG. 7 illustrates exemplary width dependency in an H-terminated GNR band gap; [0015]
FIG. 8B illustrate an exemplary plan view of a cathode electrode and an anode electrode; 2 Atty. Dkt. No. 15-01708 [0016]
FIG. 9 illustrates an exemplary plan view of a heterojunction backward diode; [0017]
FIG. 10 C illustrates an exemplary current and voltage characteristics of the heterojunction backward diode used in the computer simulation. [0019]
FIG. 11 illustrates an exemplary equivalent circuit used in equivalent circuit analysis; and [0020]
FIG. 12E illustrate an exemplary method of manufacturing a heterojunction backward diode.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device, comprising: a graphene nanoribbon having a first graphene and a second graphene; a first electrode coupled to the first graphene; and a second electrode coupled to the second graphene, wherein the first graphene is terminated on an edge by a first terminal group, includes an n-type doping layer layered on a first portion of a surface of the graphene nanoribbon and has an n-type a first polarity and the second graphene is terminated on an edge by a second terminal group different to the first terminal group, includes one of a second portion of the surface of the graphene nanoribbon exposed to the atmosphere and a p-type doping layer layered on the second portion of the surface of the graphene nanoribbon and has a p-type sccond polarity different from the first polarity.
The electronic device according to claim 1, wherein the first polarity of the first graphcnc is n-typc and the sccond polarity of the sccond graphcnc is p-typc and electron affinity of the first graphene is greater than electron affinity of the second graphene.
The electronic device according to claim 1, wherein the first graphene and the second graphene include 2 to 43 carbon atoms in the short direction. 3 PATENT Fujitsu Ref.: 15-01708 App. Ser. No.: 15/238,973
The electronic device according to claim 1, wherein the combination of the first terminal group of the first graphene and the second terminal group of the second graphene is one selected from (F, H), (C I, H), (F, OH), (C I, OH), (F, NH 2), (CI, NH 2), (F, CH 3), (CI, CH 3), (H, NH 2), (OH, NH 2), (OH, CH 3), and (H, OH).
The electronic device according to claim 1, wherein the graphene nanoribbon has a third graphene coupled between the first graphene and the second graphene and the third graphene differs from the first graphene and the second graphene in at least one of a width in the short direction, the terminal group of the edge, and the polarity.
The electronic device according to claim 1, wherein an electrostatic capacitance is formed between the first electrode and the second electrode.
A method of manufacturing an electronic device, comprising: forming a graphene nanoribbon having a first graphene that is terminated on an edge by a first terminal group and has a first polarity and a second graphene that is terminated on an edge by a second terminal group different to the first terminal group and has a second polarity different to the first polarity; and forming a first electrode coupled to the first graphene and a second electrode coupled to the second graphene L wherein each of the first graphene and the second graphene are formed by one process of a first process in which each of the first graphene and the second graphene are formed as a p-type by exposing the graphene nanoribbon to the atmosphere or as an n-type by layering an n-type doping layer on a portion of a surface of the graphene nanoribbon and a second process in which each of the first graphene and the second graphene are formed as a p-type by layering a p-type doping layer on a portion of a surface of the graphene nanoribbon or as an n-type by layering an n-type doping layer on a portion of a surface of the graphene nanoribbon.
5 PATENT Fujitsu Ref.: 15-01708 App. Ser. No.: 15/238,973 The method according to claim 10, wherein the first polarity of the first graphene is n-type and the second polarity of the second graphene is p-type and electron affinity of the first graphene is greater than electron affinity of the second gra phene.
The method according to claim 10, wherein the first graphene and the second graphene include 2 to 43 carbon atoms in the short direction.
The method according to claim 10, wherein the combination of the first terminal group of the first graphene and the second terminal group of the second graphene is one selected from (F, H), (C I, H), (F, OH), (C I, OH), (F, NH 2), (CI, NH 2), (F, CH 3), (CI, CH 3), (H, NH 2), (OH, NH 2), (OH, CH 3), and (H, OH).
The method according to claim 10, wherein the graphene nanoribbon has a third graphene coupled between the first graphene and the second graphene and the third graphene differs from the first graphene and the second graphene in at least one of a width in the short direction, the terminal group of the edge, and the polarity.
The method according to claim 10, wherein an electrostatic capacitance is formed between the first electrode and the second electrode.
canceled
canceled
An electronic device, comprising: 6 PATENT Fujitsu Ref.: 15-01708 App. Ser. No.: 15/238,973 a graphene nanoribbon having a first graphene and a second graphene; a first electrode coupled to the first graphene; and a second electrode coupled to the second graphene, wherein the first graphene is terminated on an edge by a first terminal group and has a first polarity and the second graphene is terminated on an edge by a second terminal group different to the first terminal group and has a second polarity different from the first polarity, wherein an electrostatic capacitance is formed between the first electrode and the second electrode, wherein the total electrostatic capacitance present between the first electrode and the second electrode is q 2/2kT or higher where q is an elementary charge, k is a Boltzmann constant, and T is an operating temperature. 7
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon heterojunction backward diode (electronic device)
Materials described outside the worked examples.
first graphene (n-type, edge-terminated)
second graphene (p-type, edge-terminated)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3B illustrate exemplary AGNR structure and calculation result of band structure; [0011]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Band gap of N=7 H-terminated AGNR | 1.54 eV | H-terminated AGNR |
Thickness |
Related documents with shared materials, methods, properties, or citations.
COMPOUND, COMPOUND FABRICATION METHOD, AND GRAPHENE NANORIBBON FABRICATION METHOD
GRAPHENE NANORIBBON, GRAPHENE NANORIBBON FABRICATION METHOD, AND SEMICONDUCTOR DEVICE
third graphene
graphene nanoribbon (AGNR)
F-terminated AGNR
H-terminated AGNR
FIG. 7 illustrates exemplary width dependency in an H-terminated GNR band gap; [0015]
| 1–3 nm |
| — |
Duration | 10–20 minutes | — |
GRAPHENE LAMINATE WITH BAND GAP
third graphene
graphene nanoribbon (AGNR)
F-terminated AGNR
H-terminated AGNR
FIG. 7 illustrates exemplary width dependency in an H-terminated GNR band gap; [0015]
| 1–3 nm |
| — |
Duration | 10–20 minutes | — |
GRAPHENE LAMINATE WITH BAND GAP
third graphene
graphene nanoribbon (AGNR)
F-terminated AGNR
H-terminated AGNR
FIG. 7 illustrates exemplary width dependency in an H-terminated GNR band gap; [0015]
| 1–3 nm |
| — |
Duration | 10–20 minutes | — |
GRAPHENE LAMINATE WITH BAND GAP
third graphene
graphene nanoribbon (AGNR)
F-terminated AGNR
H-terminated AGNR
FIG. 7 illustrates exemplary width dependency in an H-terminated GNR band gap; [0015]
| 1–3 nm |
| — |
Duration | 10–20 minutes | — |