Berry curvature and shift vector effects at high-order wave mixing in biased bilayer graphene

H.K. Avetissian; H.H. Matevosyan; G.F. Mkrtchian

doi:10.1103/PhysRevB.111.045415

Paper details

Research paper

Computational DFTTheoreticalComputed Phonon

Berry curvature and shift vector effects at high-order wave mixing in biased bilayer graphene

H.K. Avetissian, H.H. Matevosyan, G.F. Mkrtchian

Physical Review B·2025·10.1103/PhysRevB.111.045415·arXiv:2409.06269

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Biased Bernal-stacked bilayer graphene used as the simulated electronic-structure system for full-Brillouin-zone optical-response calculations.

3 characterizations4 properties3 figures

Simulated Supercell DftCStudied Material

Materials

graphene

Studied Material

Also known as

bilayer grapheneBLGbiased bilayer graphene

Variables

stacking= Bernal

electrostatic_bias_meV= 250

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Berry curvature and shift vector effects at high-order wave mixing in biased bilayer graphene | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Band Gap	interlayer bias-induced gap	250meV	C	Biased Bernal-stacked bilayer graphene used as the simulated	—
Calculated Band Structure	valence/conduction-band topology	Mexican hat band dispersion near K/K'	C	Biased Bernal-stacked bilayer graphene used as the simulated	—
Berry Curvature	band-edge Berry curvature magnitude	about two orders of magnitude larger than in monolayer MoS2	C	Biased Bernal-stacked bilayer graphene used as the simulated	—
Shift Vector	R_xx	significant across the 2D hexagonal Brillouin zone, especially near zone corners	C	Biased Bernal-stacked bilayer graphene used as the simulated	—

Properties

Type	Label	Value	Material	Sample	Source
Band Gap	interlayer bias-induced gap	250meV	C	Biased Bernal-stacked bilayer graphene used as the simulated	—
Calculated Band Structure	valence/conduction-band topology	Mexican hat band dispersion near K/K'	C	Biased Bernal-stacked bilayer graphene used as the simulated	—
Berry Curvature	band-edge Berry curvature magnitude	about two orders of magnitude larger than in monolayer MoS2	C	Biased Bernal-stacked bilayer graphene used as the simulated	—
Shift Vector	R_xx	significant across the 2D hexagonal Brillouin zone, especially near zone corners	C	Biased Bernal-stacked bilayer graphene used as the simulated	—

Properties

Type	Label	Value	Material	Sample	Source
Band Gap	interlayer bias-induced gap	250meV	C	Biased Bernal-stacked bilayer graphene used as the simulated	—
Calculated Band Structure	valence/conduction-band topology	Mexican hat band dispersion near K/K'	C	Biased Bernal-stacked bilayer graphene used as the simulated	—
Berry Curvature	band-edge Berry curvature magnitude	about two orders of magnitude larger than in monolayer MoS2	C	Biased Bernal-stacked bilayer graphene used as the simulated	—
Shift Vector	R_xx	significant across the 2D hexagonal Brillouin zone, especially near zone corners	C	Biased Bernal-stacked bilayer graphene used as the simulated	—

Properties

Type	Label	Value	Material	Sample	Source
Band Gap	interlayer bias-induced gap	250meV	C	Biased Bernal-stacked bilayer graphene used as the simulated	—
Calculated Band Structure	valence/conduction-band topology	Mexican hat band dispersion near K/K'	C	Biased Bernal-stacked bilayer graphene used as the simulated	—
Berry Curvature	band-edge Berry curvature magnitude	about two orders of magnitude larger than in monolayer MoS2	C	Biased Bernal-stacked bilayer graphene used as the simulated	—
Shift Vector	R_xx	significant across the 2D hexagonal Brillouin zone, especially near zone corners	C	Biased Bernal-stacked bilayer graphene used as the simulated	—

Berry curvature and shift vector effects at high-order wave mixing in biased bilayer graphene

Samples

Biased Bernal-stacked bilayer graphene used as the simulated electronic-structure system for full-Brillouin-zone optical-response calculations.

Materials

Why these are connected

Berry curvature and shift vector effects at high-order wave mixing in biased bilayer graphene

Samples

Biased Bernal-stacked bilayer graphene used as the simulated electronic-structure system for full-Brillouin-zone optical-response calculations.

Materials

Why these are connected

Berry curvature and shift vector effects at high-order wave mixing in biased bilayer graphene

Samples

Biased Bernal-stacked bilayer graphene used as the simulated electronic-structure system for full-Brillouin-zone optical-response calculations.

Materials

Why these are connected

Berry curvature and shift vector effects at high-order wave mixing in biased bilayer graphene

Samples

Biased Bernal-stacked bilayer graphene used as the simulated electronic-structure system for full-Brillouin-zone optical-response calculations.

Materials

Why these are connected

Berry curvature and shift vector effects at high-order wave mixing in biased bilayer graphene

Samples

Biased Bernal-stacked bilayer graphene used as the simulated electronic-structure system for full-Brillouin-zone optical-response calculations.

Materials

Why these are connected

Berry curvature and shift vector effects at high-order wave mixing in biased bilayer graphene

Samples

Biased Bernal-stacked bilayer graphene used as the simulated electronic-structure system for full-Brillouin-zone optical-response calculations.

Materials

Why these are connected

Berry curvature and shift vector effects at high-order wave mixing in biased bilayer graphene

Samples

Biased Bernal-stacked bilayer graphene used as the simulated electronic-structure system for full-Brillouin-zone optical-response calculations.

Materials

Why these are connected

Berry curvature and shift vector effects at high-order wave mixing in biased bilayer graphene

Samples

Biased Bernal-stacked bilayer graphene used as the simulated electronic-structure system for full-Brillouin-zone optical-response calculations.

Materials

Why these are connected

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations