Patent
US 8,878,120ACTIVE BANDGAP TUNING OF GRAPHENE FOR TUNABLE PHOTODETECTION APPLICATIONS
Vikram Arvind Patil
US
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Patent
Atlas literature
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US 8,878,120Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 i s an exemplary electron energy dispersion relation (E -k) diagram;
FIGS. 2A, 3A and 4A show a schematic representation of an 20 electrostatically-actuated graphene-based ABT photodetector 10 with different sized bandgaps. The …
FIGS. 3A and 3 B). A photocurrent I ph2 is generated at a wavelength A₂ having an energy that is equal to or greater than the bandgap energy of the strained …
FIGS. 4A and 4 B). Upon induction of strain, the bandgap of graphene can be opened up to at least 0.9 eV, although larger bandgaps are theoretically possible. …
FIG. 5 is a graph comparing the theoretical spectral range of graphene at 300 K with the spectral ranges and operating temperatures of conventional …
FIG. 6, a silicon oxide layer 24 is formed on a silicon substrate 26 using any of a number of well-known methods. A suitable thickness for the silicon oxide …
FIG. 7, a trench 30 is etched into the silicon oxide layer 24 so as to expose a surface 32 of the silicon substrate 26. In some embodiments, it may be 5 …
FIG. 8, a graphene layer 34 is transferred onto the surface 28 of the silicon oxide layer 24 such that it is suspended over the trench 30 and away from the …
FIG. 10, an electrical voltage VS D is connected a cross the s our ce and drain electrodes 36, 38 to create a circuit with the photodetection material (e.g., …
FIG. 11 under three different degrees of induced strain. Detailed Description of the Invention 5 The present invention provides methods and devices for active …
FIG. 12 is a plot of the measured photocurrents against voltage for each of three degrees of flexion. It can be seen that the photocurrent/voltage relationships …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Listing of Claims 1. A method of adjusting the sensitivity of a photodetector to photons having a photon energy, comprising the steps of;d providing said photodetector with a photodetection material having an electron energy bandgap that is alterable by inducing strain in the photodetection material; (ii) providin g an electrically-conductive substrate having a layer of an electrically-insulatin g material thereupon, the la y er of electrically-insulating material definin g an opening through which a portion of the electrically-conductive substrate is exposed, wherein the photodetection material is supported by the electrically-insulatin g material so as to expose the photodetection material to the exposed portion of the electrically-conductive substrate; (111) providin g an ad j ustable voltage source that is electrically connected to the electrically-conductive substrate and the photodetection material; and (iv) ad j usting the voltage source so as to induce strain in the photodetection material and-inducing-strain SVG 13324622.09-09-2014.HZVOA₅₈ZPXXIFW3.CLM.1.svg 0.17 6.53 Black and white photodetection material to an electron energy bandgap equal to or lower than said photon energy, wherein said photodetection material is selected from the group consisting of graphene layers, carbon nanotubes, and graphene nanoribbons.
The method of Claim 1, wherein the means for inducing strain in the photodetection material induces such strain using a device selected from the group consisting of an electrostatic device, a pneumatic device, a magnetic device and a mechanical device.
Cancel Claims 2-3.
The method of Claim [[3]] 1, wherein the electrically-conductive substrate is a silicon substrate and the electrically-insulating material is silicon oxide.
A photodetector having an adjustable sensitivity to photons having a photon energy, comprising a photodetection material selected from the group consisting of graphene layers, carbon nanotubes, and graphene nanoribbons, and means for inducing strain in said photodetection material in a reversible and reproducible manner, wherein said means for inducin g strain in said photodetection material includes an electrically-conductive substrate, a layer of an electrically-insulatin g material that is on said electrically-conductive substrate and defines an openin g through which a portion of said electrically-conductive substrate is exposed and an ad j ustable volta g e source, and wherein said photodetection material is supported by said electrica ll y-insulatin g material so as to expose said photodetection material to said exposed portion of said electrically-conductive substrate, and said adj ustable volta g e source is electrically connected to said electrically-conductive substrate and said photodetection material.
The photodetector of Claim 6, wherein said means for inducing strain in said photodetection material induces such strain using a device selected from the group consisting of an electrostatic device, a pneumatic device, a magnetic device and a mechanical device. NJ 228771249 v1
The photodetector of Claim [[8]] 6, wherein said electrically-conductive substrate is a silicon substrate and said electrically- insulating material is silicon oxide.
Layer stacks claimed or described, ordered top of device to substrate.
adjustable-sensitivity photodetector
Materials described outside the worked examples.
graphene layers
carbon nanotubes
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 i s an exemplary electron energy dispersion relation (E -k) diagram;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
tunable optical bandgap via strain | — | graphene layers |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,878,120Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 i s an exemplary electron energy dispersion relation (E -k) diagram;
FIGS. 2A, 3A and 4A show a schematic representation of an 20 electrostatically-actuated graphene-based ABT photodetector 10 with different sized bandgaps. The …
FIGS. 3A and 3 B). A photocurrent I ph2 is generated at a wavelength A₂ having an energy that is equal to or greater than the bandgap energy of the strained …
FIGS. 4A and 4 B). Upon induction of strain, the bandgap of graphene can be opened up to at least 0.9 eV, although larger bandgaps are theoretically possible. …
FIG. 5 is a graph comparing the theoretical spectral range of graphene at 300 K with the spectral ranges and operating temperatures of conventional …
FIG. 6, a silicon oxide layer 24 is formed on a silicon substrate 26 using any of a number of well-known methods. A suitable thickness for the silicon oxide …
FIG. 7, a trench 30 is etched into the silicon oxide layer 24 so as to expose a surface 32 of the silicon substrate 26. In some embodiments, it may be 5 …
FIG. 8, a graphene layer 34 is transferred onto the surface 28 of the silicon oxide layer 24 such that it is suspended over the trench 30 and away from the …
FIG. 10, an electrical voltage VS D is connected a cross the s our ce and drain electrodes 36, 38 to create a circuit with the photodetection material (e.g., …
FIG. 11 under three different degrees of induced strain. Detailed Description of the Invention 5 The present invention provides methods and devices for active …
FIG. 12 is a plot of the measured photocurrents against voltage for each of three degrees of flexion. It can be seen that the photocurrent/voltage relationships …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Listing of Claims 1. A method of adjusting the sensitivity of a photodetector to photons having a photon energy, comprising the steps of;d providing said photodetector with a photodetection material having an electron energy bandgap that is alterable by inducing strain in the photodetection material; (ii) providin g an electrically-conductive substrate having a layer of an electrically-insulatin g material thereupon, the la y er of electrically-insulating material definin g an opening through which a portion of the electrically-conductive substrate is exposed, wherein the photodetection material is supported by the electrically-insulatin g material so as to expose the photodetection material to the exposed portion of the electrically-conductive substrate; (111) providin g an ad j ustable voltage source that is electrically connected to the electrically-conductive substrate and the photodetection material; and (iv) ad j usting the voltage source so as to induce strain in the photodetection material and-inducing-strain SVG 13324622.09-09-2014.HZVOA₅₈ZPXXIFW3.CLM.1.svg 0.17 6.53 Black and white photodetection material to an electron energy bandgap equal to or lower than said photon energy, wherein said photodetection material is selected from the group consisting of graphene layers, carbon nanotubes, and graphene nanoribbons.
The method of Claim 1, wherein the means for inducing strain in the photodetection material induces such strain using a device selected from the group consisting of an electrostatic device, a pneumatic device, a magnetic device and a mechanical device.
Cancel Claims 2-3.
The method of Claim [[3]] 1, wherein the electrically-conductive substrate is a silicon substrate and the electrically-insulating material is silicon oxide.
A photodetector having an adjustable sensitivity to photons having a photon energy, comprising a photodetection material selected from the group consisting of graphene layers, carbon nanotubes, and graphene nanoribbons, and means for inducing strain in said photodetection material in a reversible and reproducible manner, wherein said means for inducin g strain in said photodetection material includes an electrically-conductive substrate, a layer of an electrically-insulatin g material that is on said electrically-conductive substrate and defines an openin g through which a portion of said electrically-conductive substrate is exposed and an ad j ustable volta g e source, and wherein said photodetection material is supported by said electrica ll y-insulatin g material so as to expose said photodetection material to said exposed portion of said electrically-conductive substrate, and said adj ustable volta g e source is electrically connected to said electrically-conductive substrate and said photodetection material.
The photodetector of Claim 6, wherein said means for inducing strain in said photodetection material induces such strain using a device selected from the group consisting of an electrostatic device, a pneumatic device, a magnetic device and a mechanical device. NJ 228771249 v1
The photodetector of Claim [[8]] 6, wherein said electrically-conductive substrate is a silicon substrate and said electrically- insulating material is silicon oxide.
Layer stacks claimed or described, ordered top of device to substrate.
adjustable-sensitivity photodetector
Materials described outside the worked examples.
graphene layers
carbon nanotubes
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 i s an exemplary electron energy dispersion relation (E -k) diagram;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
tunable optical bandgap via strain | — | graphene layers |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,878,120Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 i s an exemplary electron energy dispersion relation (E -k) diagram;
FIGS. 2A, 3A and 4A show a schematic representation of an 20 electrostatically-actuated graphene-based ABT photodetector 10 with different sized bandgaps. The …
FIGS. 3A and 3 B). A photocurrent I ph2 is generated at a wavelength A₂ having an energy that is equal to or greater than the bandgap energy of the strained …
FIGS. 4A and 4 B). Upon induction of strain, the bandgap of graphene can be opened up to at least 0.9 eV, although larger bandgaps are theoretically possible. …
FIG. 5 is a graph comparing the theoretical spectral range of graphene at 300 K with the spectral ranges and operating temperatures of conventional …
FIG. 6, a silicon oxide layer 24 is formed on a silicon substrate 26 using any of a number of well-known methods. A suitable thickness for the silicon oxide …
FIG. 7, a trench 30 is etched into the silicon oxide layer 24 so as to expose a surface 32 of the silicon substrate 26. In some embodiments, it may be 5 …
FIG. 8, a graphene layer 34 is transferred onto the surface 28 of the silicon oxide layer 24 such that it is suspended over the trench 30 and away from the …
FIG. 10, an electrical voltage VS D is connected a cross the s our ce and drain electrodes 36, 38 to create a circuit with the photodetection material (e.g., …
FIG. 11 under three different degrees of induced strain. Detailed Description of the Invention 5 The present invention provides methods and devices for active …
FIG. 12 is a plot of the measured photocurrents against voltage for each of three degrees of flexion. It can be seen that the photocurrent/voltage relationships …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Listing of Claims 1. A method of adjusting the sensitivity of a photodetector to photons having a photon energy, comprising the steps of;d providing said photodetector with a photodetection material having an electron energy bandgap that is alterable by inducing strain in the photodetection material; (ii) providin g an electrically-conductive substrate having a layer of an electrically-insulatin g material thereupon, the la y er of electrically-insulating material definin g an opening through which a portion of the electrically-conductive substrate is exposed, wherein the photodetection material is supported by the electrically-insulatin g material so as to expose the photodetection material to the exposed portion of the electrically-conductive substrate; (111) providin g an ad j ustable voltage source that is electrically connected to the electrically-conductive substrate and the photodetection material; and (iv) ad j usting the voltage source so as to induce strain in the photodetection material and-inducing-strain SVG 13324622.09-09-2014.HZVOA₅₈ZPXXIFW3.CLM.1.svg 0.17 6.53 Black and white photodetection material to an electron energy bandgap equal to or lower than said photon energy, wherein said photodetection material is selected from the group consisting of graphene layers, carbon nanotubes, and graphene nanoribbons.
The method of Claim 1, wherein the means for inducing strain in the photodetection material induces such strain using a device selected from the group consisting of an electrostatic device, a pneumatic device, a magnetic device and a mechanical device.
Cancel Claims 2-3.
The method of Claim [[3]] 1, wherein the electrically-conductive substrate is a silicon substrate and the electrically-insulating material is silicon oxide.
A photodetector having an adjustable sensitivity to photons having a photon energy, comprising a photodetection material selected from the group consisting of graphene layers, carbon nanotubes, and graphene nanoribbons, and means for inducing strain in said photodetection material in a reversible and reproducible manner, wherein said means for inducin g strain in said photodetection material includes an electrically-conductive substrate, a layer of an electrically-insulatin g material that is on said electrically-conductive substrate and defines an openin g through which a portion of said electrically-conductive substrate is exposed and an ad j ustable volta g e source, and wherein said photodetection material is supported by said electrica ll y-insulatin g material so as to expose said photodetection material to said exposed portion of said electrically-conductive substrate, and said adj ustable volta g e source is electrically connected to said electrically-conductive substrate and said photodetection material.
The photodetector of Claim 6, wherein said means for inducing strain in said photodetection material induces such strain using a device selected from the group consisting of an electrostatic device, a pneumatic device, a magnetic device and a mechanical device. NJ 228771249 v1
The photodetector of Claim [[8]] 6, wherein said electrically-conductive substrate is a silicon substrate and said electrically- insulating material is silicon oxide.
Layer stacks claimed or described, ordered top of device to substrate.
adjustable-sensitivity photodetector
Materials described outside the worked examples.
graphene layers
carbon nanotubes
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 i s an exemplary electron energy dispersion relation (E -k) diagram;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
tunable optical bandgap via strain | — | graphene layers |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,878,120Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 i s an exemplary electron energy dispersion relation (E -k) diagram;
FIGS. 2A, 3A and 4A show a schematic representation of an 20 electrostatically-actuated graphene-based ABT photodetector 10 with different sized bandgaps. The …
FIGS. 3A and 3 B). A photocurrent I ph2 is generated at a wavelength A₂ having an energy that is equal to or greater than the bandgap energy of the strained …
FIGS. 4A and 4 B). Upon induction of strain, the bandgap of graphene can be opened up to at least 0.9 eV, although larger bandgaps are theoretically possible. …
FIG. 5 is a graph comparing the theoretical spectral range of graphene at 300 K with the spectral ranges and operating temperatures of conventional …
FIG. 6, a silicon oxide layer 24 is formed on a silicon substrate 26 using any of a number of well-known methods. A suitable thickness for the silicon oxide …
FIG. 7, a trench 30 is etched into the silicon oxide layer 24 so as to expose a surface 32 of the silicon substrate 26. In some embodiments, it may be 5 …
FIG. 8, a graphene layer 34 is transferred onto the surface 28 of the silicon oxide layer 24 such that it is suspended over the trench 30 and away from the …
FIG. 10, an electrical voltage VS D is connected a cross the s our ce and drain electrodes 36, 38 to create a circuit with the photodetection material (e.g., …
FIG. 11 under three different degrees of induced strain. Detailed Description of the Invention 5 The present invention provides methods and devices for active …
FIG. 12 is a plot of the measured photocurrents against voltage for each of three degrees of flexion. It can be seen that the photocurrent/voltage relationships …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Listing of Claims 1. A method of adjusting the sensitivity of a photodetector to photons having a photon energy, comprising the steps of;d providing said photodetector with a photodetection material having an electron energy bandgap that is alterable by inducing strain in the photodetection material; (ii) providin g an electrically-conductive substrate having a layer of an electrically-insulatin g material thereupon, the la y er of electrically-insulating material definin g an opening through which a portion of the electrically-conductive substrate is exposed, wherein the photodetection material is supported by the electrically-insulatin g material so as to expose the photodetection material to the exposed portion of the electrically-conductive substrate; (111) providin g an ad j ustable voltage source that is electrically connected to the electrically-conductive substrate and the photodetection material; and (iv) ad j usting the voltage source so as to induce strain in the photodetection material and-inducing-strain SVG 13324622.09-09-2014.HZVOA₅₈ZPXXIFW3.CLM.1.svg 0.17 6.53 Black and white photodetection material to an electron energy bandgap equal to or lower than said photon energy, wherein said photodetection material is selected from the group consisting of graphene layers, carbon nanotubes, and graphene nanoribbons.
The method of Claim 1, wherein the means for inducing strain in the photodetection material induces such strain using a device selected from the group consisting of an electrostatic device, a pneumatic device, a magnetic device and a mechanical device.
Cancel Claims 2-3.
The method of Claim [[3]] 1, wherein the electrically-conductive substrate is a silicon substrate and the electrically-insulating material is silicon oxide.
A photodetector having an adjustable sensitivity to photons having a photon energy, comprising a photodetection material selected from the group consisting of graphene layers, carbon nanotubes, and graphene nanoribbons, and means for inducing strain in said photodetection material in a reversible and reproducible manner, wherein said means for inducin g strain in said photodetection material includes an electrically-conductive substrate, a layer of an electrically-insulatin g material that is on said electrically-conductive substrate and defines an openin g through which a portion of said electrically-conductive substrate is exposed and an ad j ustable volta g e source, and wherein said photodetection material is supported by said electrica ll y-insulatin g material so as to expose said photodetection material to said exposed portion of said electrically-conductive substrate, and said adj ustable volta g e source is electrically connected to said electrically-conductive substrate and said photodetection material.
The photodetector of Claim 6, wherein said means for inducing strain in said photodetection material induces such strain using a device selected from the group consisting of an electrostatic device, a pneumatic device, a magnetic device and a mechanical device. NJ 228771249 v1
The photodetector of Claim [[8]] 6, wherein said electrically-conductive substrate is a silicon substrate and said electrically- insulating material is silicon oxide.
Layer stacks claimed or described, ordered top of device to substrate.
adjustable-sensitivity photodetector
Materials described outside the worked examples.
graphene layers
carbon nanotubes
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 i s an exemplary electron energy dispersion relation (E -k) diagram;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
tunable optical bandgap via strain | — | graphene layers |
Related documents with shared materials, methods, properties, or citations.
graphene nanoribbons
silicon
Si
silicon oxide
SiO₂
FIGS. 2A, 3A and 4A show a schematic representation of an 20 electrostatically-actuated graphene-based ABT photodetector 10 with different sized bandgaps. The …
FIGS. 2A, 3A and 4A show a schematic representation of an 20 electrostatically-actuated graphene-based ABT photodetector 10 with different sized bandgaps. The …
FIGS. 2A, 3A and 4A show a schematic representation of an 20 electrostatically-actuated graphene-based ABT photodetector 10 with different sized bandgaps. The …
FIGS. 3A and 3 B). A photocurrent I ph2 is generated at a wavelength A₂ having an energy that is equal to or greater than the bandgap energy of the strained …
FIGS. 4A and 4 B). Upon induction of strain, the bandgap of graphene can be opened up to at least 0.9 eV, although larger bandgaps are theoretically possible. …
FIGS. 4A and 4 B). Upon induction of strain, the bandgap of graphene can be opened up to at least 0.9 eV, although larger bandgaps are theoretically possible. …
FIG. 5 is a graph comparing the theoretical spectral range of graphene at 300 K with the spectral ranges and operating temperatures of conventional …
FIG. 6, a silicon oxide layer 24 is formed on a silicon substrate 26 using any of a number of well-known methods. A suitable thickness for the silicon oxide …
FIG. 6, a silicon oxide layer 24 is formed on a silicon substrate 26 using any of a number of well-known methods. A suitable thickness for the silicon oxide …
FIG. 10, an electrical voltage VS D is connected a cross the s our ce and drain electrodes 36, 38 to create a circuit with the photodetection material (e.g., …
FIG. 11 under three different degrees of induced strain. Detailed Description of the Invention 5 The present invention provides methods and devices for active …
graphene nanoribbons
silicon
Si
silicon oxide
SiO₂
FIGS. 2A, 3A and 4A show a schematic representation of an 20 electrostatically-actuated graphene-based ABT photodetector 10 with different sized bandgaps. The …
FIGS. 2A, 3A and 4A show a schematic representation of an 20 electrostatically-actuated graphene-based ABT photodetector 10 with different sized bandgaps. The …
FIGS. 2A, 3A and 4A show a schematic representation of an 20 electrostatically-actuated graphene-based ABT photodetector 10 with different sized bandgaps. The …
FIGS. 3A and 3 B). A photocurrent I ph2 is generated at a wavelength A₂ having an energy that is equal to or greater than the bandgap energy of the strained …
FIGS. 4A and 4 B). Upon induction of strain, the bandgap of graphene can be opened up to at least 0.9 eV, although larger bandgaps are theoretically possible. …
FIGS. 4A and 4 B). Upon induction of strain, the bandgap of graphene can be opened up to at least 0.9 eV, although larger bandgaps are theoretically possible. …
FIG. 5 is a graph comparing the theoretical spectral range of graphene at 300 K with the spectral ranges and operating temperatures of conventional …
FIG. 6, a silicon oxide layer 24 is formed on a silicon substrate 26 using any of a number of well-known methods. A suitable thickness for the silicon oxide …
FIG. 6, a silicon oxide layer 24 is formed on a silicon substrate 26 using any of a number of well-known methods. A suitable thickness for the silicon oxide …
FIG. 10, an electrical voltage VS D is connected a cross the s our ce and drain electrodes 36, 38 to create a circuit with the photodetection material (e.g., …
FIG. 11 under three different degrees of induced strain. Detailed Description of the Invention 5 The present invention provides methods and devices for active …
graphene nanoribbons
silicon
Si
silicon oxide
SiO₂
FIGS. 2A, 3A and 4A show a schematic representation of an 20 electrostatically-actuated graphene-based ABT photodetector 10 with different sized bandgaps. The …
FIGS. 2A, 3A and 4A show a schematic representation of an 20 electrostatically-actuated graphene-based ABT photodetector 10 with different sized bandgaps. The …
FIGS. 2A, 3A and 4A show a schematic representation of an 20 electrostatically-actuated graphene-based ABT photodetector 10 with different sized bandgaps. The …
FIGS. 3A and 3 B). A photocurrent I ph2 is generated at a wavelength A₂ having an energy that is equal to or greater than the bandgap energy of the strained …
FIGS. 4A and 4 B). Upon induction of strain, the bandgap of graphene can be opened up to at least 0.9 eV, although larger bandgaps are theoretically possible. …
FIGS. 4A and 4 B). Upon induction of strain, the bandgap of graphene can be opened up to at least 0.9 eV, although larger bandgaps are theoretically possible. …
FIG. 5 is a graph comparing the theoretical spectral range of graphene at 300 K with the spectral ranges and operating temperatures of conventional …
FIG. 6, a silicon oxide layer 24 is formed on a silicon substrate 26 using any of a number of well-known methods. A suitable thickness for the silicon oxide …
FIG. 6, a silicon oxide layer 24 is formed on a silicon substrate 26 using any of a number of well-known methods. A suitable thickness for the silicon oxide …
FIG. 10, an electrical voltage VS D is connected a cross the s our ce and drain electrodes 36, 38 to create a circuit with the photodetection material (e.g., …
FIG. 11 under three different degrees of induced strain. Detailed Description of the Invention 5 The present invention provides methods and devices for active …
graphene nanoribbons
silicon
Si
silicon oxide
SiO₂
FIGS. 2A, 3A and 4A show a schematic representation of an 20 electrostatically-actuated graphene-based ABT photodetector 10 with different sized bandgaps. The …
FIGS. 2A, 3A and 4A show a schematic representation of an 20 electrostatically-actuated graphene-based ABT photodetector 10 with different sized bandgaps. The …
FIGS. 2A, 3A and 4A show a schematic representation of an 20 electrostatically-actuated graphene-based ABT photodetector 10 with different sized bandgaps. The …
FIGS. 3A and 3 B). A photocurrent I ph2 is generated at a wavelength A₂ having an energy that is equal to or greater than the bandgap energy of the strained …
FIGS. 4A and 4 B). Upon induction of strain, the bandgap of graphene can be opened up to at least 0.9 eV, although larger bandgaps are theoretically possible. …
FIGS. 4A and 4 B). Upon induction of strain, the bandgap of graphene can be opened up to at least 0.9 eV, although larger bandgaps are theoretically possible. …
FIG. 5 is a graph comparing the theoretical spectral range of graphene at 300 K with the spectral ranges and operating temperatures of conventional …
FIG. 6, a silicon oxide layer 24 is formed on a silicon substrate 26 using any of a number of well-known methods. A suitable thickness for the silicon oxide …
FIG. 6, a silicon oxide layer 24 is formed on a silicon substrate 26 using any of a number of well-known methods. A suitable thickness for the silicon oxide …
FIG. 10, an electrical voltage VS D is connected a cross the s our ce and drain electrodes 36, 38 to create a circuit with the photodetection material (e.g., …
FIG. 11 under three different degrees of induced strain. Detailed Description of the Invention 5 The present invention provides methods and devices for active …