Patent
US 10,662,282GRAPHENE NANORIBBON, GRAPHENE NANORIBBON FABRICATION METHOD, AND SEMICONDUCTOR DEVICE
MANABU OHTOMO
US
Copyright © 2026 Matter42. All rights reserved.
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US 10,662,282Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C illustrates an example of a graphene nanoribbon. [0040] For example, a precurs o r m o lecule 10 A having a structure illustrated in FIG. l A is used …
FIG. 2 D). [0048] A band gap of a graphene nan o ribb o n increases or decreases slightly according to its width. Generally speaking, however, there is the …
FIGS. 3A and 3 B, a band gap Eg l of the (2, 1)-DCI-GNR is estimated by the density functional method to be 0.66 eV. The band gap Eg l of the (2, 1)-DCI-GNR is …
FIG. 4 B illustrates a result obtained by estimating its band structure by the density functional method. [0051] For example, the 7-AGNR is formed by forming a …
FIGS. 5 A through 5 D illustrate the stability of radicals at the time of a dicarbimide structure, a fluorine atom F, or a dioxine structure (- OCCO-) being …
FIG. 6C illustrates another example of a graphene nanoribbon. [0071] In this case, for example, a precursor molecule 10 B having a structure illustrated in
FIG. 7 is an example of a bottom gate type FET. The semiconductor device 50 includes a gate electr o de 51, a gate insulating film 52, a graphene nan o ribb o n …
FIG. 8 is an example of a top gate type FET. The semiconductor device 60 includes a support substrate 61, a graphene nanoribbon 62, an electrode 63 a, an …
FIG. 9 schematically illustrates a sectional view of the semiconductor device. [0102] A semic o nduct o r device 70 illustrated in
FIG. 10 illustrates a fourth example of a semiconductor device; and [0021]
FIG. 11 is a schematic view of an example of the electr o nic device. [0121] As illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene nanoribbon comprising a chiral ed q e ex t endin a in a len g th direction of the grap hene nanoribbon; electron-withdrawin g a rou p s bonded to the chiral ed q e, wherein the electron-withdrawing groups are periodically bonded to the chiral edge via a plurality of first carbon atoms of the chiral edge between second carbon atoms of the chiral edge to which adjacent ones of the electron-withdrawing groups are bonded. Currently amended
The graphene nanoribbon according to claim 1, wherein the electron-withdrawing a rou p s each contain an imide structure bonded to the chiral edge. Currently amended
The graphene nanoribbon according to claim 1, wherein the electron-withdrawing groups each contain an acid anhydride structure bonded to the chiral edge. Currently amended
The graphene nanoribbon according to claim 1, wherein when an angle of an armchair edge is 0 0, an angle of the chiral edge is 10.8 0. Original
. Canceled
A graphene nanoribbon fabrication method comprising polymerizing a plurality of precursor molecules by a dehydrohalogenation reaction and a dehydrogenation reaction, the plurality of precursor molecules each having a molecular structure in which a plurality of acene structure parts each containing a group of benzene rings arranged in a first direction is polymerized in a second direction perpendicular to the first direction, a halogen atom is bonded to an edge in the first direction of a terminal acene structure part, and an electron-withdrawing group is bonded to an edge in the second direction. Withdrawn
A semiconductor device comprising a graphene nanoribbon having a chiral edge to which an electron-withdrawing group is bonded. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with graphene nanoribbon
Materials described outside the worked examples.
graphene nanoribbon with chiral edge and electron-withdrawing groups
graphene nanoribbon with imide structure (dicarbimide structure) bonded to chiral edge
graphene nanoribbon with acid anhydride structure bonded to chiral edge
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 D). [0048] A band gap of a graphene nan o ribb o n increases or decreases slightly according to its width. Generally speaking, however, there is the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
chiral edge angle relative to armchair edge (0°) | 10.8 degrees | graphene nanoribbon with chiral edge and electron-withdrawing groups |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,662,282Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C illustrates an example of a graphene nanoribbon. [0040] For example, a precurs o r m o lecule 10 A having a structure illustrated in FIG. l A is used …
FIG. 2 D). [0048] A band gap of a graphene nan o ribb o n increases or decreases slightly according to its width. Generally speaking, however, there is the …
FIGS. 3A and 3 B, a band gap Eg l of the (2, 1)-DCI-GNR is estimated by the density functional method to be 0.66 eV. The band gap Eg l of the (2, 1)-DCI-GNR is …
FIG. 4 B illustrates a result obtained by estimating its band structure by the density functional method. [0051] For example, the 7-AGNR is formed by forming a …
FIGS. 5 A through 5 D illustrate the stability of radicals at the time of a dicarbimide structure, a fluorine atom F, or a dioxine structure (- OCCO-) being …
FIG. 6C illustrates another example of a graphene nanoribbon. [0071] In this case, for example, a precursor molecule 10 B having a structure illustrated in
FIG. 7 is an example of a bottom gate type FET. The semiconductor device 50 includes a gate electr o de 51, a gate insulating film 52, a graphene nan o ribb o n …
FIG. 8 is an example of a top gate type FET. The semiconductor device 60 includes a support substrate 61, a graphene nanoribbon 62, an electrode 63 a, an …
FIG. 9 schematically illustrates a sectional view of the semiconductor device. [0102] A semic o nduct o r device 70 illustrated in
FIG. 10 illustrates a fourth example of a semiconductor device; and [0021]
FIG. 11 is a schematic view of an example of the electr o nic device. [0121] As illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene nanoribbon comprising a chiral ed q e ex t endin a in a len g th direction of the grap hene nanoribbon; electron-withdrawin g a rou p s bonded to the chiral ed q e, wherein the electron-withdrawing groups are periodically bonded to the chiral edge via a plurality of first carbon atoms of the chiral edge between second carbon atoms of the chiral edge to which adjacent ones of the electron-withdrawing groups are bonded. Currently amended
The graphene nanoribbon according to claim 1, wherein the electron-withdrawing a rou p s each contain an imide structure bonded to the chiral edge. Currently amended
The graphene nanoribbon according to claim 1, wherein the electron-withdrawing groups each contain an acid anhydride structure bonded to the chiral edge. Currently amended
The graphene nanoribbon according to claim 1, wherein when an angle of an armchair edge is 0 0, an angle of the chiral edge is 10.8 0. Original
. Canceled
A graphene nanoribbon fabrication method comprising polymerizing a plurality of precursor molecules by a dehydrohalogenation reaction and a dehydrogenation reaction, the plurality of precursor molecules each having a molecular structure in which a plurality of acene structure parts each containing a group of benzene rings arranged in a first direction is polymerized in a second direction perpendicular to the first direction, a halogen atom is bonded to an edge in the first direction of a terminal acene structure part, and an electron-withdrawing group is bonded to an edge in the second direction. Withdrawn
A semiconductor device comprising a graphene nanoribbon having a chiral edge to which an electron-withdrawing group is bonded. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with graphene nanoribbon
Materials described outside the worked examples.
graphene nanoribbon with chiral edge and electron-withdrawing groups
graphene nanoribbon with imide structure (dicarbimide structure) bonded to chiral edge
graphene nanoribbon with acid anhydride structure bonded to chiral edge
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 D). [0048] A band gap of a graphene nan o ribb o n increases or decreases slightly according to its width. Generally speaking, however, there is the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
chiral edge angle relative to armchair edge (0°) | 10.8 degrees | graphene nanoribbon with chiral edge and electron-withdrawing groups |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,662,282Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C illustrates an example of a graphene nanoribbon. [0040] For example, a precurs o r m o lecule 10 A having a structure illustrated in FIG. l A is used …
FIG. 2 D). [0048] A band gap of a graphene nan o ribb o n increases or decreases slightly according to its width. Generally speaking, however, there is the …
FIGS. 3A and 3 B, a band gap Eg l of the (2, 1)-DCI-GNR is estimated by the density functional method to be 0.66 eV. The band gap Eg l of the (2, 1)-DCI-GNR is …
FIG. 4 B illustrates a result obtained by estimating its band structure by the density functional method. [0051] For example, the 7-AGNR is formed by forming a …
FIGS. 5 A through 5 D illustrate the stability of radicals at the time of a dicarbimide structure, a fluorine atom F, or a dioxine structure (- OCCO-) being …
FIG. 6C illustrates another example of a graphene nanoribbon. [0071] In this case, for example, a precursor molecule 10 B having a structure illustrated in
FIG. 7 is an example of a bottom gate type FET. The semiconductor device 50 includes a gate electr o de 51, a gate insulating film 52, a graphene nan o ribb o n …
FIG. 8 is an example of a top gate type FET. The semiconductor device 60 includes a support substrate 61, a graphene nanoribbon 62, an electrode 63 a, an …
FIG. 9 schematically illustrates a sectional view of the semiconductor device. [0102] A semic o nduct o r device 70 illustrated in
FIG. 10 illustrates a fourth example of a semiconductor device; and [0021]
FIG. 11 is a schematic view of an example of the electr o nic device. [0121] As illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene nanoribbon comprising a chiral ed q e ex t endin a in a len g th direction of the grap hene nanoribbon; electron-withdrawin g a rou p s bonded to the chiral ed q e, wherein the electron-withdrawing groups are periodically bonded to the chiral edge via a plurality of first carbon atoms of the chiral edge between second carbon atoms of the chiral edge to which adjacent ones of the electron-withdrawing groups are bonded. Currently amended
The graphene nanoribbon according to claim 1, wherein the electron-withdrawing a rou p s each contain an imide structure bonded to the chiral edge. Currently amended
The graphene nanoribbon according to claim 1, wherein the electron-withdrawing groups each contain an acid anhydride structure bonded to the chiral edge. Currently amended
The graphene nanoribbon according to claim 1, wherein when an angle of an armchair edge is 0 0, an angle of the chiral edge is 10.8 0. Original
. Canceled
A graphene nanoribbon fabrication method comprising polymerizing a plurality of precursor molecules by a dehydrohalogenation reaction and a dehydrogenation reaction, the plurality of precursor molecules each having a molecular structure in which a plurality of acene structure parts each containing a group of benzene rings arranged in a first direction is polymerized in a second direction perpendicular to the first direction, a halogen atom is bonded to an edge in the first direction of a terminal acene structure part, and an electron-withdrawing group is bonded to an edge in the second direction. Withdrawn
A semiconductor device comprising a graphene nanoribbon having a chiral edge to which an electron-withdrawing group is bonded. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with graphene nanoribbon
Materials described outside the worked examples.
graphene nanoribbon with chiral edge and electron-withdrawing groups
graphene nanoribbon with imide structure (dicarbimide structure) bonded to chiral edge
graphene nanoribbon with acid anhydride structure bonded to chiral edge
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 D). [0048] A band gap of a graphene nan o ribb o n increases or decreases slightly according to its width. Generally speaking, however, there is the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
chiral edge angle relative to armchair edge (0°) | 10.8 degrees | graphene nanoribbon with chiral edge and electron-withdrawing groups |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,662,282Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C illustrates an example of a graphene nanoribbon. [0040] For example, a precurs o r m o lecule 10 A having a structure illustrated in FIG. l A is used …
FIG. 2 D). [0048] A band gap of a graphene nan o ribb o n increases or decreases slightly according to its width. Generally speaking, however, there is the …
FIGS. 3A and 3 B, a band gap Eg l of the (2, 1)-DCI-GNR is estimated by the density functional method to be 0.66 eV. The band gap Eg l of the (2, 1)-DCI-GNR is …
FIG. 4 B illustrates a result obtained by estimating its band structure by the density functional method. [0051] For example, the 7-AGNR is formed by forming a …
FIGS. 5 A through 5 D illustrate the stability of radicals at the time of a dicarbimide structure, a fluorine atom F, or a dioxine structure (- OCCO-) being …
FIG. 6C illustrates another example of a graphene nanoribbon. [0071] In this case, for example, a precursor molecule 10 B having a structure illustrated in
FIG. 7 is an example of a bottom gate type FET. The semiconductor device 50 includes a gate electr o de 51, a gate insulating film 52, a graphene nan o ribb o n …
FIG. 8 is an example of a top gate type FET. The semiconductor device 60 includes a support substrate 61, a graphene nanoribbon 62, an electrode 63 a, an …
FIG. 9 schematically illustrates a sectional view of the semiconductor device. [0102] A semic o nduct o r device 70 illustrated in
FIG. 10 illustrates a fourth example of a semiconductor device; and [0021]
FIG. 11 is a schematic view of an example of the electr o nic device. [0121] As illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene nanoribbon comprising a chiral ed q e ex t endin a in a len g th direction of the grap hene nanoribbon; electron-withdrawin g a rou p s bonded to the chiral ed q e, wherein the electron-withdrawing groups are periodically bonded to the chiral edge via a plurality of first carbon atoms of the chiral edge between second carbon atoms of the chiral edge to which adjacent ones of the electron-withdrawing groups are bonded. Currently amended
The graphene nanoribbon according to claim 1, wherein the electron-withdrawing a rou p s each contain an imide structure bonded to the chiral edge. Currently amended
The graphene nanoribbon according to claim 1, wherein the electron-withdrawing groups each contain an acid anhydride structure bonded to the chiral edge. Currently amended
The graphene nanoribbon according to claim 1, wherein when an angle of an armchair edge is 0 0, an angle of the chiral edge is 10.8 0. Original
. Canceled
A graphene nanoribbon fabrication method comprising polymerizing a plurality of precursor molecules by a dehydrohalogenation reaction and a dehydrogenation reaction, the plurality of precursor molecules each having a molecular structure in which a plurality of acene structure parts each containing a group of benzene rings arranged in a first direction is polymerized in a second direction perpendicular to the first direction, a halogen atom is bonded to an edge in the first direction of a terminal acene structure part, and an electron-withdrawing group is bonded to an edge in the second direction. Withdrawn
A semiconductor device comprising a graphene nanoribbon having a chiral edge to which an electron-withdrawing group is bonded. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with graphene nanoribbon
Materials described outside the worked examples.
graphene nanoribbon with chiral edge and electron-withdrawing groups
graphene nanoribbon with imide structure (dicarbimide structure) bonded to chiral edge
graphene nanoribbon with acid anhydride structure bonded to chiral edge
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 D). [0048] A band gap of a graphene nan o ribb o n increases or decreases slightly according to its width. Generally speaking, however, there is the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
chiral edge angle relative to armchair edge (0°) | 10.8 degrees | graphene nanoribbon with chiral edge and electron-withdrawing groups |
Related documents with shared materials, methods, properties, or citations.
precursor molecule for graphene nanoribbon (acene structure with halogen and electron-withdrawing group)
catalytic metal substrate
FIGS. 3A and 3 B, a band gap Eg l of the (2, 1)-DCI-GNR is estimated by the density functional method to be 0.66 eV. The band gap Eg l of the (2, 1)-DCI-GNR is …
FIGS. 3A and 3 B, a band gap Eg l of the (2, 1)-DCI-GNR is estimated by the density functional method to be 0.66 eV. The band gap Eg l of the (2, 1)-DCI-GNR is …
FIG. 4 B illustrates a result obtained by estimating its band structure by the density functional method. [0051] For example, the 7-AGNR is formed by forming a …
FIG. 4 B illustrates a result obtained by estimating its band structure by the density functional method. [0051] For example, the 7-AGNR is formed by forming a …
FIG. 7 is an example of a bottom gate type FET. The semiconductor device 50 includes a gate electr o de 51, a gate insulating film 52, a graphene nan o ribb o n …
FIG. 8 is an example of a top gate type FET. The semiconductor device 60 includes a support substrate 61, a graphene nanoribbon 62, an electrode 63 a, an …
n-type operation enabled by electron-withdrawing groups increasing work function |
| n-type |
graphene nanoribbon with chiral edge and electron-withdrawing groups |
band gap smaller than armchair-edge GNR for same small width | smaller band gap vs armchair-edge GNR | graphene nanoribbon with chiral edge and electron-withdrawing groups |
Temperature | 200–300 °C | — |
Temperature | 350–450 °C | — |
precursor molecule for graphene nanoribbon (acene structure with halogen and electron-withdrawing group)
catalytic metal substrate
FIGS. 3A and 3 B, a band gap Eg l of the (2, 1)-DCI-GNR is estimated by the density functional method to be 0.66 eV. The band gap Eg l of the (2, 1)-DCI-GNR is …
FIGS. 3A and 3 B, a band gap Eg l of the (2, 1)-DCI-GNR is estimated by the density functional method to be 0.66 eV. The band gap Eg l of the (2, 1)-DCI-GNR is …
FIG. 4 B illustrates a result obtained by estimating its band structure by the density functional method. [0051] For example, the 7-AGNR is formed by forming a …
FIG. 4 B illustrates a result obtained by estimating its band structure by the density functional method. [0051] For example, the 7-AGNR is formed by forming a …
FIG. 7 is an example of a bottom gate type FET. The semiconductor device 50 includes a gate electr o de 51, a gate insulating film 52, a graphene nan o ribb o n …
FIG. 8 is an example of a top gate type FET. The semiconductor device 60 includes a support substrate 61, a graphene nanoribbon 62, an electrode 63 a, an …
n-type operation enabled by electron-withdrawing groups increasing work function |
| n-type |
graphene nanoribbon with chiral edge and electron-withdrawing groups |
band gap smaller than armchair-edge GNR for same small width | smaller band gap vs armchair-edge GNR | graphene nanoribbon with chiral edge and electron-withdrawing groups |
Temperature | 200–300 °C | — |
Temperature | 350–450 °C | — |
precursor molecule for graphene nanoribbon (acene structure with halogen and electron-withdrawing group)
catalytic metal substrate
FIGS. 3A and 3 B, a band gap Eg l of the (2, 1)-DCI-GNR is estimated by the density functional method to be 0.66 eV. The band gap Eg l of the (2, 1)-DCI-GNR is …
FIGS. 3A and 3 B, a band gap Eg l of the (2, 1)-DCI-GNR is estimated by the density functional method to be 0.66 eV. The band gap Eg l of the (2, 1)-DCI-GNR is …
FIG. 4 B illustrates a result obtained by estimating its band structure by the density functional method. [0051] For example, the 7-AGNR is formed by forming a …
FIG. 4 B illustrates a result obtained by estimating its band structure by the density functional method. [0051] For example, the 7-AGNR is formed by forming a …
FIG. 7 is an example of a bottom gate type FET. The semiconductor device 50 includes a gate electr o de 51, a gate insulating film 52, a graphene nan o ribb o n …
FIG. 8 is an example of a top gate type FET. The semiconductor device 60 includes a support substrate 61, a graphene nanoribbon 62, an electrode 63 a, an …
n-type operation enabled by electron-withdrawing groups increasing work function |
| n-type |
graphene nanoribbon with chiral edge and electron-withdrawing groups |
band gap smaller than armchair-edge GNR for same small width | smaller band gap vs armchair-edge GNR | graphene nanoribbon with chiral edge and electron-withdrawing groups |
Temperature | 200–300 °C | — |
Temperature | 350–450 °C | — |
precursor molecule for graphene nanoribbon (acene structure with halogen and electron-withdrawing group)
catalytic metal substrate
FIGS. 3A and 3 B, a band gap Eg l of the (2, 1)-DCI-GNR is estimated by the density functional method to be 0.66 eV. The band gap Eg l of the (2, 1)-DCI-GNR is …
FIGS. 3A and 3 B, a band gap Eg l of the (2, 1)-DCI-GNR is estimated by the density functional method to be 0.66 eV. The band gap Eg l of the (2, 1)-DCI-GNR is …
FIG. 4 B illustrates a result obtained by estimating its band structure by the density functional method. [0051] For example, the 7-AGNR is formed by forming a …
FIG. 4 B illustrates a result obtained by estimating its band structure by the density functional method. [0051] For example, the 7-AGNR is formed by forming a …
FIG. 7 is an example of a bottom gate type FET. The semiconductor device 50 includes a gate electr o de 51, a gate insulating film 52, a graphene nan o ribb o n …
FIG. 8 is an example of a top gate type FET. The semiconductor device 60 includes a support substrate 61, a graphene nanoribbon 62, an electrode 63 a, an …
n-type operation enabled by electron-withdrawing groups increasing work function |
| n-type |
graphene nanoribbon with chiral edge and electron-withdrawing groups |
band gap smaller than armchair-edge GNR for same small width | smaller band gap vs armchair-edge GNR | graphene nanoribbon with chiral edge and electron-withdrawing groups |
Temperature | 200–300 °C | — |
Temperature | 350–450 °C | — |