Patent
Atlas literature
Patent
US 10,672,933Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-lB and 2A, the subject optoelectronic structure 10 con stit utes a periodic array of sub-micron graphene lines (also referred to herein as graphene …
FIG. 2C is a diagram representative of the graphene absorption (Ao) under electromagnetic wave excitation-of-metal on graphene gratings with different periods …
FIG. 3B is a simplified circuit model (no input wa SVG 15735662.12-12-2017.JJYPPU₃APXXIFW2.SPEC.14.4.1442.737.1528.785.svg 0.16 0.287 Chemistry Black and white …
FIG. 4C is a diagram represent ati ve of the controlling capabilities of the subject optoelectronic device for the absorption SVG …
FIG. 5A is a di agram representative of the calculated Transmission through the subject metal- graphene grating fo r di fferent graphene mobility and n i.5 x …
FIG. 6 is a schematic di agram of a unit cell of the subject perio dic structure;
FIGS. 7A and 7B are di agrams representative of Transmission and Reflection SVG 15735662.12-12-2017.JJYPPU₃APXXIFW2.SPEC.15.12.2092.1737.2128.1763.svg 0.087 …
FIG. 8 is a di agram representative of measured normalized reflections for structures having w = 200 nm, A = 5 p m vs. w = 3 50 rn m, A =7 pi m at the same …
FIGS. 9A-9F are representative of the sequence of manufacturing steps for fabrication of the subject met al- graphene based optoelectronic structure.
FIG. 11B. A gate voltage Vg is applied between the graphene laye r 1 4 and the gate terrminal 30. For a potential detector application, when an electromagnetic …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A plasmon-enhanced terahertz graphene-based optoelectronic structure, comprising: a substrate, and hybrid metal-graphene plasmonic elements supporting plasmon resonance fully tunable in a range of terahertz frequencies, said hybrid metal-graphene plasmonic elements being configured by: a graphene layer formed on said substrate, a patterned conductive layer formed on said graphene layer, said pa tt erned conductive layer forming a first periodic array of a plurality of conductive stripes separated by respective gaps, a second periodic array of a plurality of plasmonic graphene channels defined in said graphene layer and embedded in said patterned conductive layer, said plasmonic graphene channels being confined within said respective gaps between said conductive stripes, an electrolyte layer positioned atop said pa tt erned conductive layer to envelop and contact said first periodic array of the conductive stripes and said second periodic array of the plasmonic graphene channels, a source of an electromagnetic wave of a predetermined wavelength, wherein said electromagnetic wave is incident on said hybrid metal-graphene plasmonic elements, said incident electromagnetic wave being polarized substantially perpendicular to said plasmonic graphene channels, wherein each of said plasmonic graphene channels has a width smaller than said predetermined wavelength of the electromagnetic wave, and wherein said hybrid metal- graphene plasmonic elements support the controllable plasmon-enhanced resonance fully tunable in a range of terahertz frequencies. Currently amended
The plasmon-enhanced terahertz graphene-based optoelectronic structure of Claim 1, wherein said plurality of conductive stripes of said first periodic array are formed in said conductive layer, said conductive stripes extending in a spaced apart relationship each with respect to the other with one of said respective gaps defined between adjacent conductive stripes, and each of said plasmonic graphene channels of said second periodic array is confined in said one of said respective gaps between said adjacent conductive stripes, wherein said second periodic array of said plasmonic graphene channels is sandwiched between said substrate and said electrolyte layer, wherein a width of each of said conductive stripes exceeds the width of each said plasmonic graphene channel. Currently amended
The plasmon-enhanced terahertz graphene-based optoelectronic structure of Claim 1, wherein said conductive stripes are sandwiched between said graphene layer and said electrolyte layer. Currently amended
The plasmon-enhanced terahertz graphene-based optoelectronic structure of Claim 1, wherein said substrate is fabricated from S i C (0001) material. Original
A method of fabrication of a plasmon-enhanced terahertz graphene-based optoelectronic structure comprising: forming hybrid metal-graphene plasmonic elements capable of supporting plasmon resonance fully tunable in a range of terahertz frequencies, said hybrid metal- graphene plasmonic elements being formed by: (a) epitaxially forming a single layer of graphene on a S i C substrate, and (b) forming, on said single layer of graphene, a first periodic array of metallic stripes extending substantially in paralleled relationship one with respect to another with respective gaps defined between neighboring metallic stripes, wherein a second periodic array of graphene channels is sandwiched between said substrate and said first periodic array of metallic stripes, said second periodic array including a plurality of graphene channels defined by areas of said single layer of graphene confined in respective gaps between neighboring metallic stripes, (c) applying a layer of electrolyte atop of said first periodic array of metallic stripes to envelope and being in a direct contact with said first array of metallic stripes and said second array of graphene channels, wherein said metallic stripes are sandwiched between said electrolyte and said graphene channels, (d) connecting a gate terminal to said electrolyte layer, and (e) coupling a source of gate voltage between said gate terminal and said graphene layer, wherein a ratio of a period A of said first periodic array to a width w of each said graphene channel exceeds 10, wherein the width w of said each graphene channel is in sub-micron range, and wherein the mobility p of carriers in said graphene layer ranges from 1000 to 100,000 cm 2/V -s. Previously presented
The method of Claim 19, further comprising: exposing said optoelectronic structure to an incident light polarized in a direction perpendicular to elements selected from a group consisting of said graphene channels and said metallic stripes, to excite transverse plasmon resonance in graphene, and controlling said gate voltage to tune carrier density of said graphene layer to obtain a plasmon resonance response. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
plasmon-enhanced terahertz graphene-based optoelectronic structure
Materials described outside the worked examples.
graphene
C
conductive stripes (metallic stripes)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1A-lB and 2A, the subject optoelectronic structure 10 con stit utes a periodic array of sub-micron graphene lines (also referred to herein as graphene …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
carrier mobility in plasmonic graphene channels (claimed range) | 1000–100000 | C |
carrier mobility in plasmonic graphene channels (embodiment, low-mobility detector case) | 1000 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 10,672,933Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-lB and 2A, the subject optoelectronic structure 10 con stit utes a periodic array of sub-micron graphene lines (also referred to herein as graphene …
FIG. 2C is a diagram representative of the graphene absorption (Ao) under electromagnetic wave excitation-of-metal on graphene gratings with different periods …
FIG. 3B is a simplified circuit model (no input wa SVG 15735662.12-12-2017.JJYPPU₃APXXIFW2.SPEC.14.4.1442.737.1528.785.svg 0.16 0.287 Chemistry Black and white …
FIG. 4C is a diagram represent ati ve of the controlling capabilities of the subject optoelectronic device for the absorption SVG …
FIG. 5A is a di agram representative of the calculated Transmission through the subject metal- graphene grating fo r di fferent graphene mobility and n i.5 x …
FIG. 6 is a schematic di agram of a unit cell of the subject perio dic structure;
FIGS. 7A and 7B are di agrams representative of Transmission and Reflection SVG 15735662.12-12-2017.JJYPPU₃APXXIFW2.SPEC.15.12.2092.1737.2128.1763.svg 0.087 …
FIG. 8 is a di agram representative of measured normalized reflections for structures having w = 200 nm, A = 5 p m vs. w = 3 50 rn m, A =7 pi m at the same …
FIGS. 9A-9F are representative of the sequence of manufacturing steps for fabrication of the subject met al- graphene based optoelectronic structure.
FIG. 11B. A gate voltage Vg is applied between the graphene laye r 1 4 and the gate terrminal 30. For a potential detector application, when an electromagnetic …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A plasmon-enhanced terahertz graphene-based optoelectronic structure, comprising: a substrate, and hybrid metal-graphene plasmonic elements supporting plasmon resonance fully tunable in a range of terahertz frequencies, said hybrid metal-graphene plasmonic elements being configured by: a graphene layer formed on said substrate, a patterned conductive layer formed on said graphene layer, said pa tt erned conductive layer forming a first periodic array of a plurality of conductive stripes separated by respective gaps, a second periodic array of a plurality of plasmonic graphene channels defined in said graphene layer and embedded in said patterned conductive layer, said plasmonic graphene channels being confined within said respective gaps between said conductive stripes, an electrolyte layer positioned atop said pa tt erned conductive layer to envelop and contact said first periodic array of the conductive stripes and said second periodic array of the plasmonic graphene channels, a source of an electromagnetic wave of a predetermined wavelength, wherein said electromagnetic wave is incident on said hybrid metal-graphene plasmonic elements, said incident electromagnetic wave being polarized substantially perpendicular to said plasmonic graphene channels, wherein each of said plasmonic graphene channels has a width smaller than said predetermined wavelength of the electromagnetic wave, and wherein said hybrid metal- graphene plasmonic elements support the controllable plasmon-enhanced resonance fully tunable in a range of terahertz frequencies. Currently amended
The plasmon-enhanced terahertz graphene-based optoelectronic structure of Claim 1, wherein said plurality of conductive stripes of said first periodic array are formed in said conductive layer, said conductive stripes extending in a spaced apart relationship each with respect to the other with one of said respective gaps defined between adjacent conductive stripes, and each of said plasmonic graphene channels of said second periodic array is confined in said one of said respective gaps between said adjacent conductive stripes, wherein said second periodic array of said plasmonic graphene channels is sandwiched between said substrate and said electrolyte layer, wherein a width of each of said conductive stripes exceeds the width of each said plasmonic graphene channel. Currently amended
The plasmon-enhanced terahertz graphene-based optoelectronic structure of Claim 1, wherein said conductive stripes are sandwiched between said graphene layer and said electrolyte layer. Currently amended
The plasmon-enhanced terahertz graphene-based optoelectronic structure of Claim 1, wherein said substrate is fabricated from S i C (0001) material. Original
A method of fabrication of a plasmon-enhanced terahertz graphene-based optoelectronic structure comprising: forming hybrid metal-graphene plasmonic elements capable of supporting plasmon resonance fully tunable in a range of terahertz frequencies, said hybrid metal- graphene plasmonic elements being formed by: (a) epitaxially forming a single layer of graphene on a S i C substrate, and (b) forming, on said single layer of graphene, a first periodic array of metallic stripes extending substantially in paralleled relationship one with respect to another with respective gaps defined between neighboring metallic stripes, wherein a second periodic array of graphene channels is sandwiched between said substrate and said first periodic array of metallic stripes, said second periodic array including a plurality of graphene channels defined by areas of said single layer of graphene confined in respective gaps between neighboring metallic stripes, (c) applying a layer of electrolyte atop of said first periodic array of metallic stripes to envelope and being in a direct contact with said first array of metallic stripes and said second array of graphene channels, wherein said metallic stripes are sandwiched between said electrolyte and said graphene channels, (d) connecting a gate terminal to said electrolyte layer, and (e) coupling a source of gate voltage between said gate terminal and said graphene layer, wherein a ratio of a period A of said first periodic array to a width w of each said graphene channel exceeds 10, wherein the width w of said each graphene channel is in sub-micron range, and wherein the mobility p of carriers in said graphene layer ranges from 1000 to 100,000 cm 2/V -s. Previously presented
The method of Claim 19, further comprising: exposing said optoelectronic structure to an incident light polarized in a direction perpendicular to elements selected from a group consisting of said graphene channels and said metallic stripes, to excite transverse plasmon resonance in graphene, and controlling said gate voltage to tune carrier density of said graphene layer to obtain a plasmon resonance response. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
plasmon-enhanced terahertz graphene-based optoelectronic structure
Materials described outside the worked examples.
graphene
C
conductive stripes (metallic stripes)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1A-lB and 2A, the subject optoelectronic structure 10 con stit utes a periodic array of sub-micron graphene lines (also referred to herein as graphene …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
carrier mobility in plasmonic graphene channels (claimed range) | 1000–100000 | C |
carrier mobility in plasmonic graphene channels (embodiment, low-mobility detector case) | 1000 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 10,672,933Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-lB and 2A, the subject optoelectronic structure 10 con stit utes a periodic array of sub-micron graphene lines (also referred to herein as graphene …
FIG. 2C is a diagram representative of the graphene absorption (Ao) under electromagnetic wave excitation-of-metal on graphene gratings with different periods …
FIG. 3B is a simplified circuit model (no input wa SVG 15735662.12-12-2017.JJYPPU₃APXXIFW2.SPEC.14.4.1442.737.1528.785.svg 0.16 0.287 Chemistry Black and white …
FIG. 4C is a diagram represent ati ve of the controlling capabilities of the subject optoelectronic device for the absorption SVG …
FIG. 5A is a di agram representative of the calculated Transmission through the subject metal- graphene grating fo r di fferent graphene mobility and n i.5 x …
FIG. 6 is a schematic di agram of a unit cell of the subject perio dic structure;
FIGS. 7A and 7B are di agrams representative of Transmission and Reflection SVG 15735662.12-12-2017.JJYPPU₃APXXIFW2.SPEC.15.12.2092.1737.2128.1763.svg 0.087 …
FIG. 8 is a di agram representative of measured normalized reflections for structures having w = 200 nm, A = 5 p m vs. w = 3 50 rn m, A =7 pi m at the same …
FIGS. 9A-9F are representative of the sequence of manufacturing steps for fabrication of the subject met al- graphene based optoelectronic structure.
FIG. 11B. A gate voltage Vg is applied between the graphene laye r 1 4 and the gate terrminal 30. For a potential detector application, when an electromagnetic …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A plasmon-enhanced terahertz graphene-based optoelectronic structure, comprising: a substrate, and hybrid metal-graphene plasmonic elements supporting plasmon resonance fully tunable in a range of terahertz frequencies, said hybrid metal-graphene plasmonic elements being configured by: a graphene layer formed on said substrate, a patterned conductive layer formed on said graphene layer, said pa tt erned conductive layer forming a first periodic array of a plurality of conductive stripes separated by respective gaps, a second periodic array of a plurality of plasmonic graphene channels defined in said graphene layer and embedded in said patterned conductive layer, said plasmonic graphene channels being confined within said respective gaps between said conductive stripes, an electrolyte layer positioned atop said pa tt erned conductive layer to envelop and contact said first periodic array of the conductive stripes and said second periodic array of the plasmonic graphene channels, a source of an electromagnetic wave of a predetermined wavelength, wherein said electromagnetic wave is incident on said hybrid metal-graphene plasmonic elements, said incident electromagnetic wave being polarized substantially perpendicular to said plasmonic graphene channels, wherein each of said plasmonic graphene channels has a width smaller than said predetermined wavelength of the electromagnetic wave, and wherein said hybrid metal- graphene plasmonic elements support the controllable plasmon-enhanced resonance fully tunable in a range of terahertz frequencies. Currently amended
The plasmon-enhanced terahertz graphene-based optoelectronic structure of Claim 1, wherein said plurality of conductive stripes of said first periodic array are formed in said conductive layer, said conductive stripes extending in a spaced apart relationship each with respect to the other with one of said respective gaps defined between adjacent conductive stripes, and each of said plasmonic graphene channels of said second periodic array is confined in said one of said respective gaps between said adjacent conductive stripes, wherein said second periodic array of said plasmonic graphene channels is sandwiched between said substrate and said electrolyte layer, wherein a width of each of said conductive stripes exceeds the width of each said plasmonic graphene channel. Currently amended
The plasmon-enhanced terahertz graphene-based optoelectronic structure of Claim 1, wherein said conductive stripes are sandwiched between said graphene layer and said electrolyte layer. Currently amended
The plasmon-enhanced terahertz graphene-based optoelectronic structure of Claim 1, wherein said substrate is fabricated from S i C (0001) material. Original
A method of fabrication of a plasmon-enhanced terahertz graphene-based optoelectronic structure comprising: forming hybrid metal-graphene plasmonic elements capable of supporting plasmon resonance fully tunable in a range of terahertz frequencies, said hybrid metal- graphene plasmonic elements being formed by: (a) epitaxially forming a single layer of graphene on a S i C substrate, and (b) forming, on said single layer of graphene, a first periodic array of metallic stripes extending substantially in paralleled relationship one with respect to another with respective gaps defined between neighboring metallic stripes, wherein a second periodic array of graphene channels is sandwiched between said substrate and said first periodic array of metallic stripes, said second periodic array including a plurality of graphene channels defined by areas of said single layer of graphene confined in respective gaps between neighboring metallic stripes, (c) applying a layer of electrolyte atop of said first periodic array of metallic stripes to envelope and being in a direct contact with said first array of metallic stripes and said second array of graphene channels, wherein said metallic stripes are sandwiched between said electrolyte and said graphene channels, (d) connecting a gate terminal to said electrolyte layer, and (e) coupling a source of gate voltage between said gate terminal and said graphene layer, wherein a ratio of a period A of said first periodic array to a width w of each said graphene channel exceeds 10, wherein the width w of said each graphene channel is in sub-micron range, and wherein the mobility p of carriers in said graphene layer ranges from 1000 to 100,000 cm 2/V -s. Previously presented
The method of Claim 19, further comprising: exposing said optoelectronic structure to an incident light polarized in a direction perpendicular to elements selected from a group consisting of said graphene channels and said metallic stripes, to excite transverse plasmon resonance in graphene, and controlling said gate voltage to tune carrier density of said graphene layer to obtain a plasmon resonance response. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
plasmon-enhanced terahertz graphene-based optoelectronic structure
Materials described outside the worked examples.
graphene
C
conductive stripes (metallic stripes)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1A-lB and 2A, the subject optoelectronic structure 10 con stit utes a periodic array of sub-micron graphene lines (also referred to herein as graphene …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
carrier mobility in plasmonic graphene channels (claimed range) | 1000–100000 | C |
carrier mobility in plasmonic graphene channels (embodiment, low-mobility detector case) | 1000 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 10,672,933Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-lB and 2A, the subject optoelectronic structure 10 con stit utes a periodic array of sub-micron graphene lines (also referred to herein as graphene …
FIG. 2C is a diagram representative of the graphene absorption (Ao) under electromagnetic wave excitation-of-metal on graphene gratings with different periods …
FIG. 3B is a simplified circuit model (no input wa SVG 15735662.12-12-2017.JJYPPU₃APXXIFW2.SPEC.14.4.1442.737.1528.785.svg 0.16 0.287 Chemistry Black and white …
FIG. 4C is a diagram represent ati ve of the controlling capabilities of the subject optoelectronic device for the absorption SVG …
FIG. 5A is a di agram representative of the calculated Transmission through the subject metal- graphene grating fo r di fferent graphene mobility and n i.5 x …
FIG. 6 is a schematic di agram of a unit cell of the subject perio dic structure;
FIGS. 7A and 7B are di agrams representative of Transmission and Reflection SVG 15735662.12-12-2017.JJYPPU₃APXXIFW2.SPEC.15.12.2092.1737.2128.1763.svg 0.087 …
FIG. 8 is a di agram representative of measured normalized reflections for structures having w = 200 nm, A = 5 p m vs. w = 3 50 rn m, A =7 pi m at the same …
FIGS. 9A-9F are representative of the sequence of manufacturing steps for fabrication of the subject met al- graphene based optoelectronic structure.
FIG. 11B. A gate voltage Vg is applied between the graphene laye r 1 4 and the gate terrminal 30. For a potential detector application, when an electromagnetic …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A plasmon-enhanced terahertz graphene-based optoelectronic structure, comprising: a substrate, and hybrid metal-graphene plasmonic elements supporting plasmon resonance fully tunable in a range of terahertz frequencies, said hybrid metal-graphene plasmonic elements being configured by: a graphene layer formed on said substrate, a patterned conductive layer formed on said graphene layer, said pa tt erned conductive layer forming a first periodic array of a plurality of conductive stripes separated by respective gaps, a second periodic array of a plurality of plasmonic graphene channels defined in said graphene layer and embedded in said patterned conductive layer, said plasmonic graphene channels being confined within said respective gaps between said conductive stripes, an electrolyte layer positioned atop said pa tt erned conductive layer to envelop and contact said first periodic array of the conductive stripes and said second periodic array of the plasmonic graphene channels, a source of an electromagnetic wave of a predetermined wavelength, wherein said electromagnetic wave is incident on said hybrid metal-graphene plasmonic elements, said incident electromagnetic wave being polarized substantially perpendicular to said plasmonic graphene channels, wherein each of said plasmonic graphene channels has a width smaller than said predetermined wavelength of the electromagnetic wave, and wherein said hybrid metal- graphene plasmonic elements support the controllable plasmon-enhanced resonance fully tunable in a range of terahertz frequencies. Currently amended
The plasmon-enhanced terahertz graphene-based optoelectronic structure of Claim 1, wherein said plurality of conductive stripes of said first periodic array are formed in said conductive layer, said conductive stripes extending in a spaced apart relationship each with respect to the other with one of said respective gaps defined between adjacent conductive stripes, and each of said plasmonic graphene channels of said second periodic array is confined in said one of said respective gaps between said adjacent conductive stripes, wherein said second periodic array of said plasmonic graphene channels is sandwiched between said substrate and said electrolyte layer, wherein a width of each of said conductive stripes exceeds the width of each said plasmonic graphene channel. Currently amended
The plasmon-enhanced terahertz graphene-based optoelectronic structure of Claim 1, wherein said conductive stripes are sandwiched between said graphene layer and said electrolyte layer. Currently amended
The plasmon-enhanced terahertz graphene-based optoelectronic structure of Claim 1, wherein said substrate is fabricated from S i C (0001) material. Original
A method of fabrication of a plasmon-enhanced terahertz graphene-based optoelectronic structure comprising: forming hybrid metal-graphene plasmonic elements capable of supporting plasmon resonance fully tunable in a range of terahertz frequencies, said hybrid metal- graphene plasmonic elements being formed by: (a) epitaxially forming a single layer of graphene on a S i C substrate, and (b) forming, on said single layer of graphene, a first periodic array of metallic stripes extending substantially in paralleled relationship one with respect to another with respective gaps defined between neighboring metallic stripes, wherein a second periodic array of graphene channels is sandwiched between said substrate and said first periodic array of metallic stripes, said second periodic array including a plurality of graphene channels defined by areas of said single layer of graphene confined in respective gaps between neighboring metallic stripes, (c) applying a layer of electrolyte atop of said first periodic array of metallic stripes to envelope and being in a direct contact with said first array of metallic stripes and said second array of graphene channels, wherein said metallic stripes are sandwiched between said electrolyte and said graphene channels, (d) connecting a gate terminal to said electrolyte layer, and (e) coupling a source of gate voltage between said gate terminal and said graphene layer, wherein a ratio of a period A of said first periodic array to a width w of each said graphene channel exceeds 10, wherein the width w of said each graphene channel is in sub-micron range, and wherein the mobility p of carriers in said graphene layer ranges from 1000 to 100,000 cm 2/V -s. Previously presented
The method of Claim 19, further comprising: exposing said optoelectronic structure to an incident light polarized in a direction perpendicular to elements selected from a group consisting of said graphene channels and said metallic stripes, to excite transverse plasmon resonance in graphene, and controlling said gate voltage to tune carrier density of said graphene layer to obtain a plasmon resonance response. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
plasmon-enhanced terahertz graphene-based optoelectronic structure
Materials described outside the worked examples.
graphene
C
conductive stripes (metallic stripes)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1A-lB and 2A, the subject optoelectronic structure 10 con stit utes a periodic array of sub-micron graphene lines (also referred to herein as graphene …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
carrier mobility in plasmonic graphene channels (claimed range) | 1000–100000 | C |
carrier mobility in plasmonic graphene channels (embodiment, low-mobility detector case) | 1000 |
Related documents with shared materials, methods, properties, or citations.
electrolyte
SiC (0001)
SiC
gold
Au
FIG. 2C is a diagram representative of the graphene absorption (Ao) under electromagnetic wave excitation-of-metal on graphene gratings with different periods …
FIG. 4C is a diagram represent ati ve of the controlling capabilities of the subject optoelectronic device for the absorption SVG …
FIG. 4C is a diagram represent ati ve of the controlling capabilities of the subject optoelectronic device for the absorption SVG …
FIG. 5A is a di agram representative of the calculated Transmission through the subject metal- graphene grating fo r di fferent graphene mobility and n i.5 x …
FIGS. 9A-9F are representative of the sequence of manufacturing steps for fabrication of the subject met al- graphene based optoelectronic structure.
FIG. 11B. A gate voltage Vg is applied between the graphene laye r 1 4 and the gate terrminal 30. For a potential detector application, when an electromagnetic …
C |
carrier mobility in plasmonic graphene layer (high-mobility filter/modulator threshold) | ≥ 50000 | C |
Thickness | 1000–100000 cm | — |
Thickness | 2000–20000 cm | — |
Thickness | ≤ 1 nm | — |
— | ≥ 11.5 w | — |
electrolyte
SiC (0001)
SiC
gold
Au
FIG. 2C is a diagram representative of the graphene absorption (Ao) under electromagnetic wave excitation-of-metal on graphene gratings with different periods …
FIG. 4C is a diagram represent ati ve of the controlling capabilities of the subject optoelectronic device for the absorption SVG …
FIG. 4C is a diagram represent ati ve of the controlling capabilities of the subject optoelectronic device for the absorption SVG …
FIG. 5A is a di agram representative of the calculated Transmission through the subject metal- graphene grating fo r di fferent graphene mobility and n i.5 x …
FIGS. 9A-9F are representative of the sequence of manufacturing steps for fabrication of the subject met al- graphene based optoelectronic structure.
FIG. 11B. A gate voltage Vg is applied between the graphene laye r 1 4 and the gate terrminal 30. For a potential detector application, when an electromagnetic …
C |
carrier mobility in plasmonic graphene layer (high-mobility filter/modulator threshold) | ≥ 50000 | C |
Thickness | 1000–100000 cm | — |
Thickness | 2000–20000 cm | — |
Thickness | ≤ 1 nm | — |
— | ≥ 11.5 w | — |
electrolyte
SiC (0001)
SiC
gold
Au
FIG. 2C is a diagram representative of the graphene absorption (Ao) under electromagnetic wave excitation-of-metal on graphene gratings with different periods …
FIG. 4C is a diagram represent ati ve of the controlling capabilities of the subject optoelectronic device for the absorption SVG …
FIG. 4C is a diagram represent ati ve of the controlling capabilities of the subject optoelectronic device for the absorption SVG …
FIG. 5A is a di agram representative of the calculated Transmission through the subject metal- graphene grating fo r di fferent graphene mobility and n i.5 x …
FIGS. 9A-9F are representative of the sequence of manufacturing steps for fabrication of the subject met al- graphene based optoelectronic structure.
FIG. 11B. A gate voltage Vg is applied between the graphene laye r 1 4 and the gate terrminal 30. For a potential detector application, when an electromagnetic …
C |
carrier mobility in plasmonic graphene layer (high-mobility filter/modulator threshold) | ≥ 50000 | C |
Thickness | 1000–100000 cm | — |
Thickness | 2000–20000 cm | — |
Thickness | ≤ 1 nm | — |
— | ≥ 11.5 w | — |
electrolyte
SiC (0001)
SiC
gold
Au
FIG. 2C is a diagram representative of the graphene absorption (Ao) under electromagnetic wave excitation-of-metal on graphene gratings with different periods …
FIG. 4C is a diagram represent ati ve of the controlling capabilities of the subject optoelectronic device for the absorption SVG …
FIG. 4C is a diagram represent ati ve of the controlling capabilities of the subject optoelectronic device for the absorption SVG …
FIG. 5A is a di agram representative of the calculated Transmission through the subject metal- graphene grating fo r di fferent graphene mobility and n i.5 x …
FIGS. 9A-9F are representative of the sequence of manufacturing steps for fabrication of the subject met al- graphene based optoelectronic structure.
FIG. 11B. A gate voltage Vg is applied between the graphene laye r 1 4 and the gate terrminal 30. For a potential detector application, when an electromagnetic …
C |
carrier mobility in plasmonic graphene layer (high-mobility filter/modulator threshold) | ≥ 50000 | C |
Thickness | 1000–100000 cm | — |
Thickness | 2000–20000 cm | — |
Thickness | ≤ 1 nm | — |
— | ≥ 11.5 w | — |
