Patent
US 8,476,617GRAPHENE-CONTAINING SEMICONDUCTOR STRUCTURES AND DEVICES ON A SILICON CARBIDE SUBSTRATE HAVING A DEFINED MISCUT ANGLE
Christos D. Dimitrakopoulos
US
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Patent
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US 8,476,617Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a pictorial representation (through a cross sectional view) depicting a SiC substrate having a miscut angle of 0.1 0 or less in accordance with an …
FIG. 2 is a pictorial representation (through a cross sectional view) depicting the structure of
FIGS. 3A-3C are pictorial representations (through cross sectional views) depicting various graphene-containing semiconductor devices that can be formed using …
FIGS. 4A-4F are AFM height images showing the dependency of graphene morphology on the miscut angle of various SiC substrates.
FIG. 5 is a graph depicting room temperature Hall mobility (cm 2/(V-s)) vs. SiC miscut angle (degrees). [0015]
FIG. 6 is a graph depicting Hall mobility at 300K (cm 2/(V-s)) vs. average vicinal terrace width (m).
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
4567. LISTING OF CLAIMS: 1-7.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-containing semiconductor structure
graphene RF transistor/electronic transistor
Materials described outside the worked examples.
SiC substrate
SiC
graphene layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 4A-4F are AFM height images showing the dependency of graphene morphology on the miscut angle of various SiC substrates.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
room temperature Hall mobility | 1900 cm2/(V·s) | graphene layer |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,476,617Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a pictorial representation (through a cross sectional view) depicting a SiC substrate having a miscut angle of 0.1 0 or less in accordance with an …
FIG. 2 is a pictorial representation (through a cross sectional view) depicting the structure of
FIGS. 3A-3C are pictorial representations (through cross sectional views) depicting various graphene-containing semiconductor devices that can be formed using …
FIGS. 4A-4F are AFM height images showing the dependency of graphene morphology on the miscut angle of various SiC substrates.
FIG. 5 is a graph depicting room temperature Hall mobility (cm 2/(V-s)) vs. SiC miscut angle (degrees). [0015]
FIG. 6 is a graph depicting Hall mobility at 300K (cm 2/(V-s)) vs. average vicinal terrace width (m).
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
4567. LISTING OF CLAIMS: 1-7.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-containing semiconductor structure
graphene RF transistor/electronic transistor
Materials described outside the worked examples.
SiC substrate
SiC
graphene layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 4A-4F are AFM height images showing the dependency of graphene morphology on the miscut angle of various SiC substrates.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
room temperature Hall mobility | 1900 cm2/(V·s) | graphene layer |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,476,617Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a pictorial representation (through a cross sectional view) depicting a SiC substrate having a miscut angle of 0.1 0 or less in accordance with an …
FIG. 2 is a pictorial representation (through a cross sectional view) depicting the structure of
FIGS. 3A-3C are pictorial representations (through cross sectional views) depicting various graphene-containing semiconductor devices that can be formed using …
FIGS. 4A-4F are AFM height images showing the dependency of graphene morphology on the miscut angle of various SiC substrates.
FIG. 5 is a graph depicting room temperature Hall mobility (cm 2/(V-s)) vs. SiC miscut angle (degrees). [0015]
FIG. 6 is a graph depicting Hall mobility at 300K (cm 2/(V-s)) vs. average vicinal terrace width (m).
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
4567. LISTING OF CLAIMS: 1-7.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-containing semiconductor structure
graphene RF transistor/electronic transistor
Materials described outside the worked examples.
SiC substrate
SiC
graphene layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 4A-4F are AFM height images showing the dependency of graphene morphology on the miscut angle of various SiC substrates.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
room temperature Hall mobility | 1900 cm2/(V·s) | graphene layer |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,476,617Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a pictorial representation (through a cross sectional view) depicting a SiC substrate having a miscut angle of 0.1 0 or less in accordance with an …
FIG. 2 is a pictorial representation (through a cross sectional view) depicting the structure of
FIGS. 3A-3C are pictorial representations (through cross sectional views) depicting various graphene-containing semiconductor devices that can be formed using …
FIGS. 4A-4F are AFM height images showing the dependency of graphene morphology on the miscut angle of various SiC substrates.
FIG. 5 is a graph depicting room temperature Hall mobility (cm 2/(V-s)) vs. SiC miscut angle (degrees). [0015]
FIG. 6 is a graph depicting Hall mobility at 300K (cm 2/(V-s)) vs. average vicinal terrace width (m).
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
4567. LISTING OF CLAIMS: 1-7.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-containing semiconductor structure
graphene RF transistor/electronic transistor
Materials described outside the worked examples.
SiC substrate
SiC
graphene layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 4A-4F are AFM height images showing the dependency of graphene morphology on the miscut angle of various SiC substrates.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
room temperature Hall mobility | 1900 cm2/(V·s) | graphene layer |
Thickness |
Related documents with shared materials, methods, properties, or citations.
FIG. 5 is a graph depicting room temperature Hall mobility (cm 2/(V-s)) vs. SiC miscut angle (degrees). [0015]
FIG. 6 is a graph depicting Hall mobility at 300K (cm 2/(V-s)) vs. average vicinal terrace width (m).
| 585–905 cm |
| — |
Thickness | 0.5–1 mm | — |
Temperature | 810–1250 °C | — |
Thickness | 0.34–2 nm | — |
Thickness | 0.34–0.68 nm | — |
Thickness | 1–20 nm | — |
Thickness | 2–10 nm | — |
Thickness | 1–100 nm | — |
Thickness | 3–30 nm | — |
Temperature | 1400–1600 °C | — |
FIG. 5 is a graph depicting room temperature Hall mobility (cm 2/(V-s)) vs. SiC miscut angle (degrees). [0015]
FIG. 6 is a graph depicting Hall mobility at 300K (cm 2/(V-s)) vs. average vicinal terrace width (m).
| 585–905 cm |
| — |
Thickness | 0.5–1 mm | — |
Temperature | 810–1250 °C | — |
Thickness | 0.34–2 nm | — |
Thickness | 0.34–0.68 nm | — |
Thickness | 1–20 nm | — |
Thickness | 2–10 nm | — |
Thickness | 1–100 nm | — |
Thickness | 3–30 nm | — |
Temperature | 1400–1600 °C | — |
FIG. 5 is a graph depicting room temperature Hall mobility (cm 2/(V-s)) vs. SiC miscut angle (degrees). [0015]
FIG. 6 is a graph depicting Hall mobility at 300K (cm 2/(V-s)) vs. average vicinal terrace width (m).
| 585–905 cm |
| — |
Thickness | 0.5–1 mm | — |
Temperature | 810–1250 °C | — |
Thickness | 0.34–2 nm | — |
Thickness | 0.34–0.68 nm | — |
Thickness | 1–20 nm | — |
Thickness | 2–10 nm | — |
Thickness | 1–100 nm | — |
Thickness | 3–30 nm | — |
Temperature | 1400–1600 °C | — |
FIG. 5 is a graph depicting room temperature Hall mobility (cm 2/(V-s)) vs. SiC miscut angle (degrees). [0015]
FIG. 6 is a graph depicting Hall mobility at 300K (cm 2/(V-s)) vs. average vicinal terrace width (m).
| 585–905 cm |
| — |
Thickness | 0.5–1 mm | — |
Temperature | 810–1250 °C | — |
Thickness | 0.34–2 nm | — |
Thickness | 0.34–0.68 nm | — |
Thickness | 1–20 nm | — |
Thickness | 2–10 nm | — |
Thickness | 1–100 nm | — |
Thickness | 3–30 nm | — |
Temperature | 1400–1600 °C | — |