Patent
US 8,242,030ACTIVATION OF GRAPHENE BUFFER LAYERS ON SILICON CARBIDE BY ULTRA LOW TEMPERATURE OXIDATION
James B. Hannon
US
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Patent
Atlas literature
Patent
US 8,242,030Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic diagram of a silicon carbide substrate having one or more layers of graphene formed thereupon;
Figure 2 is schematic diagram of the structure of
Figure 3 is a graph of current versus voltage curves for an exemplary device before and af t er oxidation to decouple the graphene buffer layer from the silicon carbide layer and electrically activate the graphene layer.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of electrically activating a structure having one or more graphene layers formed on a silicon carbide layer, the method comprising: subjecting the structure to an oxidation process so as to form a silicon oxide layer disposed between the silicon carbide layer and a bottommost of the one or more graphene layers, thereby electrically activating the bottommost graphene layer.
The method of claim 1, further comprising performing the oxidation process in a chamber initially evacuated to a base pressure of about 1 0-3 torr or less.
The method of claim 1, further comprising performing the oxidation process in an atmospheric pressure oxidation furnace.
A method of forming a graphene-based electronic device, the method comprising: forming one or more graphene layers on a silicon carbide layer, wherein a bottommost of the one or more graphene layers bonded to the silicon carbide layer initially comprises an electrically nonconductive buffer layer; and performing an oxidation process so as to form a silicon oxide layer disposed between the silicon carbide layer and the bottommost of the one or more graphene layers, thereby electrically activating the bottommost graphene layer.
The method of claim 10, further comprising performing the oxidation process in a chamber initially evacuated to a base pressure of about 1 0-3 torr or less.
The method of claim 10, further comprising performing the oxidation process in an atmospheric pressure oxidation furnace.
The method of claim 10, wherein the silicon oxide layer comprises silicon dioxide.
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based electronic device
Materials described outside the worked examples.
graphene
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 3 is a graph of current versus voltage curves for an exemplary device before and af t er oxidation to decouple the graphene buffer layer from the silicon carbide layer and electrically activate the graphene layer.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Mobility | >60000 cm2/V-sec | graphene |
Fet Mobility | ~15000 cm2/V-sec |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,242,030Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic diagram of a silicon carbide substrate having one or more layers of graphene formed thereupon;
Figure 2 is schematic diagram of the structure of
Figure 3 is a graph of current versus voltage curves for an exemplary device before and af t er oxidation to decouple the graphene buffer layer from the silicon carbide layer and electrically activate the graphene layer.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of electrically activating a structure having one or more graphene layers formed on a silicon carbide layer, the method comprising: subjecting the structure to an oxidation process so as to form a silicon oxide layer disposed between the silicon carbide layer and a bottommost of the one or more graphene layers, thereby electrically activating the bottommost graphene layer.
The method of claim 1, further comprising performing the oxidation process in a chamber initially evacuated to a base pressure of about 1 0-3 torr or less.
The method of claim 1, further comprising performing the oxidation process in an atmospheric pressure oxidation furnace.
A method of forming a graphene-based electronic device, the method comprising: forming one or more graphene layers on a silicon carbide layer, wherein a bottommost of the one or more graphene layers bonded to the silicon carbide layer initially comprises an electrically nonconductive buffer layer; and performing an oxidation process so as to form a silicon oxide layer disposed between the silicon carbide layer and the bottommost of the one or more graphene layers, thereby electrically activating the bottommost graphene layer.
The method of claim 10, further comprising performing the oxidation process in a chamber initially evacuated to a base pressure of about 1 0-3 torr or less.
The method of claim 10, further comprising performing the oxidation process in an atmospheric pressure oxidation furnace.
The method of claim 10, wherein the silicon oxide layer comprises silicon dioxide.
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based electronic device
Materials described outside the worked examples.
graphene
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 3 is a graph of current versus voltage curves for an exemplary device before and af t er oxidation to decouple the graphene buffer layer from the silicon carbide layer and electrically activate the graphene layer.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Mobility | >60000 cm2/V-sec | graphene |
Fet Mobility | ~15000 cm2/V-sec |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,242,030Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic diagram of a silicon carbide substrate having one or more layers of graphene formed thereupon;
Figure 2 is schematic diagram of the structure of
Figure 3 is a graph of current versus voltage curves for an exemplary device before and af t er oxidation to decouple the graphene buffer layer from the silicon carbide layer and electrically activate the graphene layer.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of electrically activating a structure having one or more graphene layers formed on a silicon carbide layer, the method comprising: subjecting the structure to an oxidation process so as to form a silicon oxide layer disposed between the silicon carbide layer and a bottommost of the one or more graphene layers, thereby electrically activating the bottommost graphene layer.
The method of claim 1, further comprising performing the oxidation process in a chamber initially evacuated to a base pressure of about 1 0-3 torr or less.
The method of claim 1, further comprising performing the oxidation process in an atmospheric pressure oxidation furnace.
A method of forming a graphene-based electronic device, the method comprising: forming one or more graphene layers on a silicon carbide layer, wherein a bottommost of the one or more graphene layers bonded to the silicon carbide layer initially comprises an electrically nonconductive buffer layer; and performing an oxidation process so as to form a silicon oxide layer disposed between the silicon carbide layer and the bottommost of the one or more graphene layers, thereby electrically activating the bottommost graphene layer.
The method of claim 10, further comprising performing the oxidation process in a chamber initially evacuated to a base pressure of about 1 0-3 torr or less.
The method of claim 10, further comprising performing the oxidation process in an atmospheric pressure oxidation furnace.
The method of claim 10, wherein the silicon oxide layer comprises silicon dioxide.
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based electronic device
Materials described outside the worked examples.
graphene
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 3 is a graph of current versus voltage curves for an exemplary device before and af t er oxidation to decouple the graphene buffer layer from the silicon carbide layer and electrically activate the graphene layer.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Mobility | >60000 cm2/V-sec | graphene |
Fet Mobility | ~15000 cm2/V-sec |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,242,030Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic diagram of a silicon carbide substrate having one or more layers of graphene formed thereupon;
Figure 2 is schematic diagram of the structure of
Figure 3 is a graph of current versus voltage curves for an exemplary device before and af t er oxidation to decouple the graphene buffer layer from the silicon carbide layer and electrically activate the graphene layer.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of electrically activating a structure having one or more graphene layers formed on a silicon carbide layer, the method comprising: subjecting the structure to an oxidation process so as to form a silicon oxide layer disposed between the silicon carbide layer and a bottommost of the one or more graphene layers, thereby electrically activating the bottommost graphene layer.
The method of claim 1, further comprising performing the oxidation process in a chamber initially evacuated to a base pressure of about 1 0-3 torr or less.
The method of claim 1, further comprising performing the oxidation process in an atmospheric pressure oxidation furnace.
A method of forming a graphene-based electronic device, the method comprising: forming one or more graphene layers on a silicon carbide layer, wherein a bottommost of the one or more graphene layers bonded to the silicon carbide layer initially comprises an electrically nonconductive buffer layer; and performing an oxidation process so as to form a silicon oxide layer disposed between the silicon carbide layer and the bottommost of the one or more graphene layers, thereby electrically activating the bottommost graphene layer.
The method of claim 10, further comprising performing the oxidation process in a chamber initially evacuated to a base pressure of about 1 0-3 torr or less.
The method of claim 10, further comprising performing the oxidation process in an atmospheric pressure oxidation furnace.
The method of claim 10, wherein the silicon oxide layer comprises silicon dioxide.
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based electronic device
Materials described outside the worked examples.
graphene
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 3 is a graph of current versus voltage curves for an exemplary device before and af t er oxidation to decouple the graphene buffer layer from the silicon carbide layer and electrically activate the graphene layer.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Mobility | >60000 cm2/V-sec | graphene |
Fet Mobility | ~15000 cm2/V-sec |
Related documents with shared materials, methods, properties, or citations.
silicon oxide
oxygen gas
O₂
silicon dioxide
SiO₂
Figure 3 is a graph of current versus voltage curves for an exemplary device before and af t er oxidation to decouple the graphene buffer layer from the silicon carbide layer and electrically activate the graphene layer.
Pressure | 1–760 torr | — |
Temperature | 200–400 °C | — |
Duration | 5–3600 s | — |
Pressure | 0–3 torr | — |
Pressure | 0–6 torr | — |
Pressure | 0.1–760 torr | — |
Temperature | ≤ 400 °C | — |
Temperature | ≤ 450 °C | — |
Pressure | 0.000001 torr | — |
Pressure | ≤ 0.000001 torr | — |
silicon oxide
oxygen gas
O₂
silicon dioxide
SiO₂
Figure 3 is a graph of current versus voltage curves for an exemplary device before and af t er oxidation to decouple the graphene buffer layer from the silicon carbide layer and electrically activate the graphene layer.
Pressure | 1–760 torr | — |
Temperature | 200–400 °C | — |
Duration | 5–3600 s | — |
Pressure | 0–3 torr | — |
Pressure | 0–6 torr | — |
Pressure | 0.1–760 torr | — |
Temperature | ≤ 400 °C | — |
Temperature | ≤ 450 °C | — |
Pressure | 0.000001 torr | — |
Pressure | ≤ 0.000001 torr | — |
silicon oxide
oxygen gas
O₂
silicon dioxide
SiO₂
Figure 3 is a graph of current versus voltage curves for an exemplary device before and af t er oxidation to decouple the graphene buffer layer from the silicon carbide layer and electrically activate the graphene layer.
Pressure | 1–760 torr | — |
Temperature | 200–400 °C | — |
Duration | 5–3600 s | — |
Pressure | 0–3 torr | — |
Pressure | 0–6 torr | — |
Pressure | 0.1–760 torr | — |
Temperature | ≤ 400 °C | — |
Temperature | ≤ 450 °C | — |
Pressure | 0.000001 torr | — |
Pressure | ≤ 0.000001 torr | — |
silicon oxide
oxygen gas
O₂
silicon dioxide
SiO₂
Figure 3 is a graph of current versus voltage curves for an exemplary device before and af t er oxidation to decouple the graphene buffer layer from the silicon carbide layer and electrically activate the graphene layer.
Pressure | 1–760 torr | — |
Temperature | 200–400 °C | — |
Duration | 5–3600 s | — |
Pressure | 0–3 torr | — |
Pressure | 0–6 torr | — |
Pressure | 0.1–760 torr | — |
Temperature | ≤ 400 °C | — |
Temperature | ≤ 450 °C | — |
Pressure | 0.000001 torr | — |
Pressure | ≤ 0.000001 torr | — |