PROCESS FOR PRODUCING GRAPHENE/SiC COMPOSITE MATERIAL AND GRAPHENE/SiC COMPOSITE MATERIAL OBTAINED THEREBY

Michiko KUSUNOKI

Patent

Atlas literature

Patent

US 9,227,848

PROCESS FOR PRODUCING GRAPHENE/SiC COMPOSITE MATERIAL AND GRAPHENE/SiC COMPOSITE MATERIAL OBTAINED THEREBY

Michiko KUSUNOKI, Wataru NORIMATSU

2016-01-05·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

1 independent · 1 dependent

1
IndependentSiCSiO₂graphenegraphene/SiC composite material
A process for producing a graphene/SiC composite material in which at least one graphene layer is formed on a SiC single crystal substrate, comprising the steps of: removing an oxide ﬁlm that is formed by natural oxidation and covers a surface of the SiC single c r ystal substrate, thereby exposing a Si surface of the SiC single crystal substrate, heating the S i C single crystal substrate with the Si surface exposed under an oxygen atmosphere, thereby forming a SiO 2 layer on the surface of the SiC single cr ystal substrate, and SVG 13354628.04-14-2015.I₈HQB₄NNPXXIFW3.CLM.1.svg 0.57 6.02 Black and white
1. 2
  Dependent← claim 1SiO₂
  The process for producing a graphene/SiC composite material according to claim 1, wherein the thickness of the SiO₂ layer is 200 nm or less.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

graphene/SiC composite material

graphenechannel or active layer

SiCsubstrate

Materials

Materials described outside the worked examples.

SiC single crystal substrate

SiC

Substrate

SiO₂ layer

SiO₂

Intermediate Oxide Layer

Process steps

Additional fabrication and treatment steps described in the patent.

Oxide Removal

Step 1

Process details

description:Removing native oxide film formed by natural oxidation to expose Si surface of SiC single crystal substrate

Materials:SiC

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
SiO2 layer thickness upper bound	≤ 200 nm	SiO₂

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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