Patent
US 9,771,665Title: PROCESS FOR FORMING GRAPHENE LAYERS ON SILICON CARBIDE 20l2
Francesca Iacopi, Mohsin Ahmed, Benjamin Vaughan Cunning
GRIFFITH UNIVERSITY·19 March 2015·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,771,665Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a scanning electron microscope image of a S i C cantilever structure 30 attached to a silicon wafer;
Figure 2 is a flow diagram of a process for forming graphene layers in accordance with some embodiments of the present invention;
Figure 3 i s a set of schematic cross-sectional side views of a wafer at different stages of the process of
Figure 4 is a photograph of a full wafer of graphene devices produced using the process of
Figure 5 is a set of three cross-sectional transmission electron microscopy (XTEM) images of a sample processed in accordance with the process of
Figures 6 and 7 are graphs of sheet resistance as a function of electrical current for a two-sheet graphene layer and a Ni-Cu film, respectively;
Figures 8 and 9 are schematic diagrams illustrating an arrangement for 10 performing adhesion energy measurements on graphene layers f o rmed by the process of
Figure 10 is a graph of the energy release rate for debonding (layer separation) of an interface adjacent to the graphene layer, as measured using the arrangement shown in
Figure 11 is a graph representing the defect densities of graphene layers formed by the process of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A process for forming graphene, comprising: depositing at least two metals onto a surface of silicon carbide (SiC), the at least two metals comprising at least one first metal and at least one second metal; and heating the SiC and the first and second metals under conditions that cause the at least one first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide, wherein corresponding solubilities of the carbon in the at least one stable silicide and in the at least one second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer disposed between the at least one stable silicide and the remaining SiC, and wherein the at least one second metal is chosen such that the corresponding solubility of carbon in the at least one second metal is lower than the corresponding solubility of carbon in the at least one stable silicide.
The process of claim 1 [[2]], wherein the first at least one metal is nickel, and the second at least one metal is copper.
The process of claim 1, wherein the silicon carbide is in the form of a thin film disposed on a substrate.
The process of claim 1, wherein the graphene systems (MEMS) transducer.
The process of claim 1, wherein the silicon
The process of claim 1, wherein said heating
The process of claim 1, wherein said heating
The process of claim 1, wherein said heating first and second metals to a temperature of at least
The process of claim 1, wherein said heating first and second metals to a temperature of about
The process of claim 1, wherein said heating step.
A structure comprising one or more layers of layer is part of a micro-electro-mechanical carbide is substantially amorphous. step is performed in an inert gas atmosphere. step is performed under vacuum. has a pressure of about 10-4 to 10-3 mbar. step comprises includes heating the SiC and the 800 °C. step comprises includes heating the SiC and the 1 000 0 C. step comprises heating the SiC and the first and step is a rapid thermal processing (RTP) heating graphene formed by the process of claim 1. -3-
canceled
A process for forming graphene layers, comprising: depositing one or more layers, collectively substantially composed of nickel and copper, a Ni/Cu layer onto a surface of silicon carbide, the Ni/Cu layer being composed substantially of nickel and copper; heating the resulting structure to cause at least a portion of the nickel to react with a corresponding portion of the silicon carbide to form a carbon and a metallic layer comprising a nickel silicide and any remaining unreacted nickel and copper, wherein the carbon is in a form of a graphene layer disposed between remaining silicon carbide and the metallic layer.
The process of claim 4 [[1]], comprising removing the metallic layer to expose the underlying graphene layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene on SiC/Si structure with metallic overlayer
Materials described outside the worked examples.
silicon carbide
SiC
graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 is a scanning electron microscope image of a S i C cantilever structure 30 attached to a silicon wafer;
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-LAYERED STRUCTURE, METHOD OF PREPARING THE SAME, AND TRANSPARENT ELECTRODE AND TRANSISTOR INCLUDING GRAPHENE-LAYERED STRUCTURE
ELECTRONIC SWITCHING, MEMORY, AND SENSOR DEVICES FROM A DISCONTINUOUS GRAPHENE AND/OR GRAPHITE CARBON LAYER ON DIELECTRIC MATERIALS
Patent
Atlas literature
Patent
US 9,771,665Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a scanning electron microscope image of a S i C cantilever structure 30 attached to a silicon wafer;
Figure 2 is a flow diagram of a process for forming graphene layers in accordance with some embodiments of the present invention;
Figure 3 i s a set of schematic cross-sectional side views of a wafer at different stages of the process of
Figure 4 is a photograph of a full wafer of graphene devices produced using the process of
Figure 5 is a set of three cross-sectional transmission electron microscopy (XTEM) images of a sample processed in accordance with the process of
Figures 6 and 7 are graphs of sheet resistance as a function of electrical current for a two-sheet graphene layer and a Ni-Cu film, respectively;
Figures 8 and 9 are schematic diagrams illustrating an arrangement for 10 performing adhesion energy measurements on graphene layers f o rmed by the process of
Figure 10 is a graph of the energy release rate for debonding (layer separation) of an interface adjacent to the graphene layer, as measured using the arrangement shown in
Figure 11 is a graph representing the defect densities of graphene layers formed by the process of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A process for forming graphene, comprising: depositing at least two metals onto a surface of silicon carbide (SiC), the at least two metals comprising at least one first metal and at least one second metal; and heating the SiC and the first and second metals under conditions that cause the at least one first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide, wherein corresponding solubilities of the carbon in the at least one stable silicide and in the at least one second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer disposed between the at least one stable silicide and the remaining SiC, and wherein the at least one second metal is chosen such that the corresponding solubility of carbon in the at least one second metal is lower than the corresponding solubility of carbon in the at least one stable silicide.
The process of claim 1 [[2]], wherein the first at least one metal is nickel, and the second at least one metal is copper.
The process of claim 1, wherein the silicon carbide is in the form of a thin film disposed on a substrate.
The process of claim 1, wherein the graphene systems (MEMS) transducer.
The process of claim 1, wherein the silicon
The process of claim 1, wherein said heating
The process of claim 1, wherein said heating
The process of claim 1, wherein said heating first and second metals to a temperature of at least
The process of claim 1, wherein said heating first and second metals to a temperature of about
The process of claim 1, wherein said heating step.
A structure comprising one or more layers of layer is part of a micro-electro-mechanical carbide is substantially amorphous. step is performed in an inert gas atmosphere. step is performed under vacuum. has a pressure of about 10-4 to 10-3 mbar. step comprises includes heating the SiC and the 800 °C. step comprises includes heating the SiC and the 1 000 0 C. step comprises heating the SiC and the first and step is a rapid thermal processing (RTP) heating graphene formed by the process of claim 1. -3-
canceled
A process for forming graphene layers, comprising: depositing one or more layers, collectively substantially composed of nickel and copper, a Ni/Cu layer onto a surface of silicon carbide, the Ni/Cu layer being composed substantially of nickel and copper; heating the resulting structure to cause at least a portion of the nickel to react with a corresponding portion of the silicon carbide to form a carbon and a metallic layer comprising a nickel silicide and any remaining unreacted nickel and copper, wherein the carbon is in a form of a graphene layer disposed between remaining silicon carbide and the metallic layer.
The process of claim 4 [[1]], comprising removing the metallic layer to expose the underlying graphene layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene on SiC/Si structure with metallic overlayer
Materials described outside the worked examples.
silicon carbide
SiC
graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 is a scanning electron microscope image of a S i C cantilever structure 30 attached to a silicon wafer;
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-LAYERED STRUCTURE, METHOD OF PREPARING THE SAME, AND TRANSPARENT ELECTRODE AND TRANSISTOR INCLUDING GRAPHENE-LAYERED STRUCTURE
ELECTRONIC SWITCHING, MEMORY, AND SENSOR DEVICES FROM A DISCONTINUOUS GRAPHENE AND/OR GRAPHITE CARBON LAYER ON DIELECTRIC MATERIALS
Patent
Atlas literature
Patent
US 9,771,665Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a scanning electron microscope image of a S i C cantilever structure 30 attached to a silicon wafer;
Figure 2 is a flow diagram of a process for forming graphene layers in accordance with some embodiments of the present invention;
Figure 3 i s a set of schematic cross-sectional side views of a wafer at different stages of the process of
Figure 4 is a photograph of a full wafer of graphene devices produced using the process of
Figure 5 is a set of three cross-sectional transmission electron microscopy (XTEM) images of a sample processed in accordance with the process of
Figures 6 and 7 are graphs of sheet resistance as a function of electrical current for a two-sheet graphene layer and a Ni-Cu film, respectively;
Figures 8 and 9 are schematic diagrams illustrating an arrangement for 10 performing adhesion energy measurements on graphene layers f o rmed by the process of
Figure 10 is a graph of the energy release rate for debonding (layer separation) of an interface adjacent to the graphene layer, as measured using the arrangement shown in
Figure 11 is a graph representing the defect densities of graphene layers formed by the process of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A process for forming graphene, comprising: depositing at least two metals onto a surface of silicon carbide (SiC), the at least two metals comprising at least one first metal and at least one second metal; and heating the SiC and the first and second metals under conditions that cause the at least one first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide, wherein corresponding solubilities of the carbon in the at least one stable silicide and in the at least one second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer disposed between the at least one stable silicide and the remaining SiC, and wherein the at least one second metal is chosen such that the corresponding solubility of carbon in the at least one second metal is lower than the corresponding solubility of carbon in the at least one stable silicide.
The process of claim 1 [[2]], wherein the first at least one metal is nickel, and the second at least one metal is copper.
The process of claim 1, wherein the silicon carbide is in the form of a thin film disposed on a substrate.
The process of claim 1, wherein the graphene systems (MEMS) transducer.
The process of claim 1, wherein the silicon
The process of claim 1, wherein said heating
The process of claim 1, wherein said heating
The process of claim 1, wherein said heating first and second metals to a temperature of at least
The process of claim 1, wherein said heating first and second metals to a temperature of about
The process of claim 1, wherein said heating step.
A structure comprising one or more layers of layer is part of a micro-electro-mechanical carbide is substantially amorphous. step is performed in an inert gas atmosphere. step is performed under vacuum. has a pressure of about 10-4 to 10-3 mbar. step comprises includes heating the SiC and the 800 °C. step comprises includes heating the SiC and the 1 000 0 C. step comprises heating the SiC and the first and step is a rapid thermal processing (RTP) heating graphene formed by the process of claim 1. -3-
canceled
A process for forming graphene layers, comprising: depositing one or more layers, collectively substantially composed of nickel and copper, a Ni/Cu layer onto a surface of silicon carbide, the Ni/Cu layer being composed substantially of nickel and copper; heating the resulting structure to cause at least a portion of the nickel to react with a corresponding portion of the silicon carbide to form a carbon and a metallic layer comprising a nickel silicide and any remaining unreacted nickel and copper, wherein the carbon is in a form of a graphene layer disposed between remaining silicon carbide and the metallic layer.
The process of claim 4 [[1]], comprising removing the metallic layer to expose the underlying graphene layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene on SiC/Si structure with metallic overlayer
Materials described outside the worked examples.
silicon carbide
SiC
graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 is a scanning electron microscope image of a S i C cantilever structure 30 attached to a silicon wafer;
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-LAYERED STRUCTURE, METHOD OF PREPARING THE SAME, AND TRANSPARENT ELECTRODE AND TRANSISTOR INCLUDING GRAPHENE-LAYERED STRUCTURE
ELECTRONIC SWITCHING, MEMORY, AND SENSOR DEVICES FROM A DISCONTINUOUS GRAPHENE AND/OR GRAPHITE CARBON LAYER ON DIELECTRIC MATERIALS
Patent
Atlas literature
Patent
US 9,771,665Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a scanning electron microscope image of a S i C cantilever structure 30 attached to a silicon wafer;
Figure 2 is a flow diagram of a process for forming graphene layers in accordance with some embodiments of the present invention;
Figure 3 i s a set of schematic cross-sectional side views of a wafer at different stages of the process of
Figure 4 is a photograph of a full wafer of graphene devices produced using the process of
Figure 5 is a set of three cross-sectional transmission electron microscopy (XTEM) images of a sample processed in accordance with the process of
Figures 6 and 7 are graphs of sheet resistance as a function of electrical current for a two-sheet graphene layer and a Ni-Cu film, respectively;
Figures 8 and 9 are schematic diagrams illustrating an arrangement for 10 performing adhesion energy measurements on graphene layers f o rmed by the process of
Figure 10 is a graph of the energy release rate for debonding (layer separation) of an interface adjacent to the graphene layer, as measured using the arrangement shown in
Figure 11 is a graph representing the defect densities of graphene layers formed by the process of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A process for forming graphene, comprising: depositing at least two metals onto a surface of silicon carbide (SiC), the at least two metals comprising at least one first metal and at least one second metal; and heating the SiC and the first and second metals under conditions that cause the at least one first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide, wherein corresponding solubilities of the carbon in the at least one stable silicide and in the at least one second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer disposed between the at least one stable silicide and the remaining SiC, and wherein the at least one second metal is chosen such that the corresponding solubility of carbon in the at least one second metal is lower than the corresponding solubility of carbon in the at least one stable silicide.
The process of claim 1 [[2]], wherein the first at least one metal is nickel, and the second at least one metal is copper.
The process of claim 1, wherein the silicon carbide is in the form of a thin film disposed on a substrate.
The process of claim 1, wherein the graphene systems (MEMS) transducer.
The process of claim 1, wherein the silicon
The process of claim 1, wherein said heating
The process of claim 1, wherein said heating
The process of claim 1, wherein said heating first and second metals to a temperature of at least
The process of claim 1, wherein said heating first and second metals to a temperature of about
The process of claim 1, wherein said heating step.
A structure comprising one or more layers of layer is part of a micro-electro-mechanical carbide is substantially amorphous. step is performed in an inert gas atmosphere. step is performed under vacuum. has a pressure of about 10-4 to 10-3 mbar. step comprises includes heating the SiC and the 800 °C. step comprises includes heating the SiC and the 1 000 0 C. step comprises heating the SiC and the first and step is a rapid thermal processing (RTP) heating graphene formed by the process of claim 1. -3-
canceled
A process for forming graphene layers, comprising: depositing one or more layers, collectively substantially composed of nickel and copper, a Ni/Cu layer onto a surface of silicon carbide, the Ni/Cu layer being composed substantially of nickel and copper; heating the resulting structure to cause at least a portion of the nickel to react with a corresponding portion of the silicon carbide to form a carbon and a metallic layer comprising a nickel silicide and any remaining unreacted nickel and copper, wherein the carbon is in a form of a graphene layer disposed between remaining silicon carbide and the metallic layer.
The process of claim 4 [[1]], comprising removing the metallic layer to expose the underlying graphene layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene on SiC/Si structure with metallic overlayer
Materials described outside the worked examples.
silicon carbide
SiC
graphene
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 is a scanning electron microscope image of a S i C cantilever structure 30 attached to a silicon wafer;
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-LAYERED STRUCTURE, METHOD OF PREPARING THE SAME, AND TRANSPARENT ELECTRODE AND TRANSISTOR INCLUDING GRAPHENE-LAYERED STRUCTURE
ELECTRONIC SWITCHING, MEMORY, AND SENSOR DEVICES FROM A DISCONTINUOUS GRAPHENE AND/OR GRAPHITE CARBON LAYER ON DIELECTRIC MATERIALS
first metal
second metal
nickel
Ni
copper
Cu
nickel silicide
silicon
Si
Ni/Cu layer
Figure 5 is a set of three cross-sectional transmission electron microscopy (XTEM) images of a sample processed in accordance with the process of
Figures 6 and 7 are graphs of sheet resistance as a function of electrical current for a two-sheet graphene layer and a Ni-Cu film, respectively;
Figure 10 is a graph of the energy release rate for debonding (layer separation) of an interface adjacent to the graphene layer, as measured using the arrangement shown in
Figure 11 is a graph representing the defect densities of graphene layers formed by the process of
first metal
second metal
nickel
Ni
copper
Cu
nickel silicide
silicon
Si
Ni/Cu layer
Figure 5 is a set of three cross-sectional transmission electron microscopy (XTEM) images of a sample processed in accordance with the process of
Figures 6 and 7 are graphs of sheet resistance as a function of electrical current for a two-sheet graphene layer and a Ni-Cu film, respectively;
Figure 10 is a graph of the energy release rate for debonding (layer separation) of an interface adjacent to the graphene layer, as measured using the arrangement shown in
Figure 11 is a graph representing the defect densities of graphene layers formed by the process of
first metal
second metal
nickel
Ni
copper
Cu
nickel silicide
silicon
Si
Ni/Cu layer
Figure 5 is a set of three cross-sectional transmission electron microscopy (XTEM) images of a sample processed in accordance with the process of
Figures 6 and 7 are graphs of sheet resistance as a function of electrical current for a two-sheet graphene layer and a Ni-Cu film, respectively;
Figure 10 is a graph of the energy release rate for debonding (layer separation) of an interface adjacent to the graphene layer, as measured using the arrangement shown in
Figure 11 is a graph representing the defect densities of graphene layers formed by the process of
first metal
second metal
nickel
Ni
copper
Cu
nickel silicide
silicon
Si
Ni/Cu layer
Figure 5 is a set of three cross-sectional transmission electron microscopy (XTEM) images of a sample processed in accordance with the process of
Figures 6 and 7 are graphs of sheet resistance as a function of electrical current for a two-sheet graphene layer and a Ni-Cu film, respectively;
Figure 10 is a graph of the energy release rate for debonding (layer separation) of an interface adjacent to the graphene layer, as measured using the arrangement shown in
Figure 11 is a graph representing the defect densities of graphene layers formed by the process of