Patent
US 9,193,133GRAPHENE-LAYERED STRUCTURE, METHOD OF PREPARING THE SAME, AND TRANSPARENT ELECTRODE AND TRANSISTOR INCLUDING GRAPHENE-LAYERED STRUCTURE
Hyeon-jin SHIN
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,193,133Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram illustrating a method of directly growing graphene, according to an embodiment; [0027]
FIG. 2 is a diagram of a dye-sensitized solar cell including a graphene-layered structure, according to an embodiment; [0028]
FIG. 3 is an exploded perspective view of a fuel cell according to an embodiment; [0029]
FIG. 4 is a cross-sectional view of a membrane-electrode assembly of a fuel cell according to an embodiment; [0030]
FIG. 5 is a cross-sectional view of a field effect transistor ("FET") according to an embodiment; [0031]
FIGS. 6 through 9 are transmission electron microscopic ("TEM") images each showing the inner cross-section of a silicon carbide (SiC) thin film formed after …
FIG. 7 illustrates a TEM electron diffraction pattern of a SiN region represented as A in
FIG. 8 illustrates a TEM electron diffraction pattern of a SiC region represented as B in
FIG. 9, according to an embodiment; [0033]
FIG. 10, according to an embodiment; [0035]
FIG. 11 is an enlarged view of region D of
FIG. 12 is an enlarged view of region E of
FIG. 13 is a graph showing dynamic secondary ion mass spectrometry ("SIMS") results of a SiC thin film formed after an ion implantation process, according to an …
FIG. 14 is a graph showing dynamic SIMS results of graphene formed by a heat treatment process, according to an embodiment; [0037]
FIG. 15 is a graph showing Raman spectrum results of graphene, according to an embodiment; and [0038]
FIG. 16 is a graph showing Raman spectrum results of formed graphene, according to an embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene-layered structure comprising: an ion implantation layer in a silicon carbide thin film; and a graphenized silicon carbide surface layer on the ion implantation layer, wherein the ion implantation layer is in contact with a Si-face surface of the silicon carbide thin film by ion-implanting nitrogen ions into a Si-face surface of the silicon carbide thin film, the ion implantation layer comprises at least one of silicon nitride or silicon carbon nitride, the ion implantation layer has a nitrogen concentration and the nitrogen concentration in the ion implantation layer varies according to a depth of the ion implantation layer, and the graphenized silicon carbide surface layer is on the ion implantation layer by heat treating the silicon carbide thin film with the ion implantation layer therein.
A graphene-layered structure comprising: graphene; a silicon nitride layer below the graphene; and a silicon carbide layer below the silicon nitride layer s wherein the silicon nitride layer has a nitrogen concentration and the nitrogen concentration in the silicon nitride layer varies according to a depth of the silicon nitride layer, and the silicon nitride layer is in contact with a Si-face surface of the silicon carbide layer.
A transistor comprising the graphene-layered structure of claim 2.
A transparent electrode comprising the graphene-layered structure of claim 2.
The graphene-layered structure of claim 2, wherein the silicon nitride layer is directly on the silicon carbide layer and the graphene is directly on the silicon nitride layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-layered structure (claim 1)
graphene-layered structure (claim 2)
Materials described outside the worked examples.
graphene
C
silicon nitride
Si₃N₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a cross-sectional view of a field effect transistor ("FET") according to an embodiment; [0031]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–3 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,193,133Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram illustrating a method of directly growing graphene, according to an embodiment; [0027]
FIG. 2 is a diagram of a dye-sensitized solar cell including a graphene-layered structure, according to an embodiment; [0028]
FIG. 3 is an exploded perspective view of a fuel cell according to an embodiment; [0029]
FIG. 4 is a cross-sectional view of a membrane-electrode assembly of a fuel cell according to an embodiment; [0030]
FIG. 5 is a cross-sectional view of a field effect transistor ("FET") according to an embodiment; [0031]
FIGS. 6 through 9 are transmission electron microscopic ("TEM") images each showing the inner cross-section of a silicon carbide (SiC) thin film formed after …
FIG. 7 illustrates a TEM electron diffraction pattern of a SiN region represented as A in
FIG. 8 illustrates a TEM electron diffraction pattern of a SiC region represented as B in
FIG. 9, according to an embodiment; [0033]
FIG. 10, according to an embodiment; [0035]
FIG. 11 is an enlarged view of region D of
FIG. 12 is an enlarged view of region E of
FIG. 13 is a graph showing dynamic secondary ion mass spectrometry ("SIMS") results of a SiC thin film formed after an ion implantation process, according to an …
FIG. 14 is a graph showing dynamic SIMS results of graphene formed by a heat treatment process, according to an embodiment; [0037]
FIG. 15 is a graph showing Raman spectrum results of graphene, according to an embodiment; and [0038]
FIG. 16 is a graph showing Raman spectrum results of formed graphene, according to an embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene-layered structure comprising: an ion implantation layer in a silicon carbide thin film; and a graphenized silicon carbide surface layer on the ion implantation layer, wherein the ion implantation layer is in contact with a Si-face surface of the silicon carbide thin film by ion-implanting nitrogen ions into a Si-face surface of the silicon carbide thin film, the ion implantation layer comprises at least one of silicon nitride or silicon carbon nitride, the ion implantation layer has a nitrogen concentration and the nitrogen concentration in the ion implantation layer varies according to a depth of the ion implantation layer, and the graphenized silicon carbide surface layer is on the ion implantation layer by heat treating the silicon carbide thin film with the ion implantation layer therein.
A graphene-layered structure comprising: graphene; a silicon nitride layer below the graphene; and a silicon carbide layer below the silicon nitride layer s wherein the silicon nitride layer has a nitrogen concentration and the nitrogen concentration in the silicon nitride layer varies according to a depth of the silicon nitride layer, and the silicon nitride layer is in contact with a Si-face surface of the silicon carbide layer.
A transistor comprising the graphene-layered structure of claim 2.
A transparent electrode comprising the graphene-layered structure of claim 2.
The graphene-layered structure of claim 2, wherein the silicon nitride layer is directly on the silicon carbide layer and the graphene is directly on the silicon nitride layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-layered structure (claim 1)
graphene-layered structure (claim 2)
Materials described outside the worked examples.
graphene
C
silicon nitride
Si₃N₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a cross-sectional view of a field effect transistor ("FET") according to an embodiment; [0031]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–3 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,193,133Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram illustrating a method of directly growing graphene, according to an embodiment; [0027]
FIG. 2 is a diagram of a dye-sensitized solar cell including a graphene-layered structure, according to an embodiment; [0028]
FIG. 3 is an exploded perspective view of a fuel cell according to an embodiment; [0029]
FIG. 4 is a cross-sectional view of a membrane-electrode assembly of a fuel cell according to an embodiment; [0030]
FIG. 5 is a cross-sectional view of a field effect transistor ("FET") according to an embodiment; [0031]
FIGS. 6 through 9 are transmission electron microscopic ("TEM") images each showing the inner cross-section of a silicon carbide (SiC) thin film formed after …
FIG. 7 illustrates a TEM electron diffraction pattern of a SiN region represented as A in
FIG. 8 illustrates a TEM electron diffraction pattern of a SiC region represented as B in
FIG. 9, according to an embodiment; [0033]
FIG. 10, according to an embodiment; [0035]
FIG. 11 is an enlarged view of region D of
FIG. 12 is an enlarged view of region E of
FIG. 13 is a graph showing dynamic secondary ion mass spectrometry ("SIMS") results of a SiC thin film formed after an ion implantation process, according to an …
FIG. 14 is a graph showing dynamic SIMS results of graphene formed by a heat treatment process, according to an embodiment; [0037]
FIG. 15 is a graph showing Raman spectrum results of graphene, according to an embodiment; and [0038]
FIG. 16 is a graph showing Raman spectrum results of formed graphene, according to an embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene-layered structure comprising: an ion implantation layer in a silicon carbide thin film; and a graphenized silicon carbide surface layer on the ion implantation layer, wherein the ion implantation layer is in contact with a Si-face surface of the silicon carbide thin film by ion-implanting nitrogen ions into a Si-face surface of the silicon carbide thin film, the ion implantation layer comprises at least one of silicon nitride or silicon carbon nitride, the ion implantation layer has a nitrogen concentration and the nitrogen concentration in the ion implantation layer varies according to a depth of the ion implantation layer, and the graphenized silicon carbide surface layer is on the ion implantation layer by heat treating the silicon carbide thin film with the ion implantation layer therein.
A graphene-layered structure comprising: graphene; a silicon nitride layer below the graphene; and a silicon carbide layer below the silicon nitride layer s wherein the silicon nitride layer has a nitrogen concentration and the nitrogen concentration in the silicon nitride layer varies according to a depth of the silicon nitride layer, and the silicon nitride layer is in contact with a Si-face surface of the silicon carbide layer.
A transistor comprising the graphene-layered structure of claim 2.
A transparent electrode comprising the graphene-layered structure of claim 2.
The graphene-layered structure of claim 2, wherein the silicon nitride layer is directly on the silicon carbide layer and the graphene is directly on the silicon nitride layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-layered structure (claim 1)
graphene-layered structure (claim 2)
Materials described outside the worked examples.
graphene
C
silicon nitride
Si₃N₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a cross-sectional view of a field effect transistor ("FET") according to an embodiment; [0031]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–3 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,193,133Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram illustrating a method of directly growing graphene, according to an embodiment; [0027]
FIG. 2 is a diagram of a dye-sensitized solar cell including a graphene-layered structure, according to an embodiment; [0028]
FIG. 3 is an exploded perspective view of a fuel cell according to an embodiment; [0029]
FIG. 4 is a cross-sectional view of a membrane-electrode assembly of a fuel cell according to an embodiment; [0030]
FIG. 5 is a cross-sectional view of a field effect transistor ("FET") according to an embodiment; [0031]
FIGS. 6 through 9 are transmission electron microscopic ("TEM") images each showing the inner cross-section of a silicon carbide (SiC) thin film formed after …
FIG. 7 illustrates a TEM electron diffraction pattern of a SiN region represented as A in
FIG. 8 illustrates a TEM electron diffraction pattern of a SiC region represented as B in
FIG. 9, according to an embodiment; [0033]
FIG. 10, according to an embodiment; [0035]
FIG. 11 is an enlarged view of region D of
FIG. 12 is an enlarged view of region E of
FIG. 13 is a graph showing dynamic secondary ion mass spectrometry ("SIMS") results of a SiC thin film formed after an ion implantation process, according to an …
FIG. 14 is a graph showing dynamic SIMS results of graphene formed by a heat treatment process, according to an embodiment; [0037]
FIG. 15 is a graph showing Raman spectrum results of graphene, according to an embodiment; and [0038]
FIG. 16 is a graph showing Raman spectrum results of formed graphene, according to an embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene-layered structure comprising: an ion implantation layer in a silicon carbide thin film; and a graphenized silicon carbide surface layer on the ion implantation layer, wherein the ion implantation layer is in contact with a Si-face surface of the silicon carbide thin film by ion-implanting nitrogen ions into a Si-face surface of the silicon carbide thin film, the ion implantation layer comprises at least one of silicon nitride or silicon carbon nitride, the ion implantation layer has a nitrogen concentration and the nitrogen concentration in the ion implantation layer varies according to a depth of the ion implantation layer, and the graphenized silicon carbide surface layer is on the ion implantation layer by heat treating the silicon carbide thin film with the ion implantation layer therein.
A graphene-layered structure comprising: graphene; a silicon nitride layer below the graphene; and a silicon carbide layer below the silicon nitride layer s wherein the silicon nitride layer has a nitrogen concentration and the nitrogen concentration in the silicon nitride layer varies according to a depth of the silicon nitride layer, and the silicon nitride layer is in contact with a Si-face surface of the silicon carbide layer.
A transistor comprising the graphene-layered structure of claim 2.
A transparent electrode comprising the graphene-layered structure of claim 2.
The graphene-layered structure of claim 2, wherein the silicon nitride layer is directly on the silicon carbide layer and the graphene is directly on the silicon nitride layer.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-layered structure (claim 1)
graphene-layered structure (claim 2)
Materials described outside the worked examples.
graphene
C
silicon nitride
Si₃N₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a cross-sectional view of a field effect transistor ("FET") according to an embodiment; [0031]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–3 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
transistor
transparent electrode
silicon carbide
SiC
silicon carbon nitride
SiCN
FIGS. 6 through 9 are transmission electron microscopic ("TEM") images each showing the inner cross-section of a silicon carbide (SiC) thin film formed after …
FIG. 7 illustrates a TEM electron diffraction pattern of a SiN region represented as A in
FIG. 8 illustrates a TEM electron diffraction pattern of a SiC region represented as B in
FIG. 13 is a graph showing dynamic secondary ion mass spectrometry ("SIMS") results of a SiC thin film formed after an ion implantation process, according to an …
FIG. 14 is a graph showing dynamic SIMS results of graphene formed by a heat treatment process, according to an embodiment; [0037]
FIG. 15 is a graph showing Raman spectrum results of graphene, according to an embodiment; and [0038]
FIG. 15 is a graph showing Raman spectrum results of graphene, according to an embodiment; and [0038]
FIG. 16 is a graph showing Raman spectrum results of formed graphene, according to an embodiment.
FIG. 16 is a graph showing Raman spectrum results of formed graphene, according to an embodiment.
| — |
Duration | 0.001–1 hour | — |
Thickness | 10–1000 mm | — |
Thickness | 0.5–50 nm | — |
Thickness | 1–10 nm | — |
Thickness | 4–300 nm | — |
Thickness | 0.1–30 nm | — |
Thickness | 0.3–20 nm | — |
Pressure | 10–12 torr | — |
Duration | 0.001–10 hours | — |
transistor
transparent electrode
silicon carbide
SiC
silicon carbon nitride
SiCN
FIGS. 6 through 9 are transmission electron microscopic ("TEM") images each showing the inner cross-section of a silicon carbide (SiC) thin film formed after …
FIG. 7 illustrates a TEM electron diffraction pattern of a SiN region represented as A in
FIG. 8 illustrates a TEM electron diffraction pattern of a SiC region represented as B in
FIG. 13 is a graph showing dynamic secondary ion mass spectrometry ("SIMS") results of a SiC thin film formed after an ion implantation process, according to an …
FIG. 14 is a graph showing dynamic SIMS results of graphene formed by a heat treatment process, according to an embodiment; [0037]
FIG. 15 is a graph showing Raman spectrum results of graphene, according to an embodiment; and [0038]
FIG. 15 is a graph showing Raman spectrum results of graphene, according to an embodiment; and [0038]
FIG. 16 is a graph showing Raman spectrum results of formed graphene, according to an embodiment.
FIG. 16 is a graph showing Raman spectrum results of formed graphene, according to an embodiment.
| — |
Duration | 0.001–1 hour | — |
Thickness | 10–1000 mm | — |
Thickness | 0.5–50 nm | — |
Thickness | 1–10 nm | — |
Thickness | 4–300 nm | — |
Thickness | 0.1–30 nm | — |
Thickness | 0.3–20 nm | — |
Pressure | 10–12 torr | — |
Duration | 0.001–10 hours | — |
transistor
transparent electrode
silicon carbide
SiC
silicon carbon nitride
SiCN
FIGS. 6 through 9 are transmission electron microscopic ("TEM") images each showing the inner cross-section of a silicon carbide (SiC) thin film formed after …
FIG. 7 illustrates a TEM electron diffraction pattern of a SiN region represented as A in
FIG. 8 illustrates a TEM electron diffraction pattern of a SiC region represented as B in
FIG. 13 is a graph showing dynamic secondary ion mass spectrometry ("SIMS") results of a SiC thin film formed after an ion implantation process, according to an …
FIG. 14 is a graph showing dynamic SIMS results of graphene formed by a heat treatment process, according to an embodiment; [0037]
FIG. 15 is a graph showing Raman spectrum results of graphene, according to an embodiment; and [0038]
FIG. 15 is a graph showing Raman spectrum results of graphene, according to an embodiment; and [0038]
FIG. 16 is a graph showing Raman spectrum results of formed graphene, according to an embodiment.
FIG. 16 is a graph showing Raman spectrum results of formed graphene, according to an embodiment.
| — |
Duration | 0.001–1 hour | — |
Thickness | 10–1000 mm | — |
Thickness | 0.5–50 nm | — |
Thickness | 1–10 nm | — |
Thickness | 4–300 nm | — |
Thickness | 0.1–30 nm | — |
Thickness | 0.3–20 nm | — |
Pressure | 10–12 torr | — |
Duration | 0.001–10 hours | — |
transistor
transparent electrode
silicon carbide
SiC
silicon carbon nitride
SiCN
FIGS. 6 through 9 are transmission electron microscopic ("TEM") images each showing the inner cross-section of a silicon carbide (SiC) thin film formed after …
FIG. 7 illustrates a TEM electron diffraction pattern of a SiN region represented as A in
FIG. 8 illustrates a TEM electron diffraction pattern of a SiC region represented as B in
FIG. 13 is a graph showing dynamic secondary ion mass spectrometry ("SIMS") results of a SiC thin film formed after an ion implantation process, according to an …
FIG. 14 is a graph showing dynamic SIMS results of graphene formed by a heat treatment process, according to an embodiment; [0037]
FIG. 15 is a graph showing Raman spectrum results of graphene, according to an embodiment; and [0038]
FIG. 15 is a graph showing Raman spectrum results of graphene, according to an embodiment; and [0038]
FIG. 16 is a graph showing Raman spectrum results of formed graphene, according to an embodiment.
FIG. 16 is a graph showing Raman spectrum results of formed graphene, according to an embodiment.
| — |
Duration | 0.001–1 hour | — |
Thickness | 10–1000 mm | — |
Thickness | 0.5–50 nm | — |
Thickness | 1–10 nm | — |
Thickness | 4–300 nm | — |
Thickness | 0.1–30 nm | — |
Thickness | 0.3–20 nm | — |
Pressure | 10–12 torr | — |
Duration | 0.001–10 hours | — |