Patent
US 8,940,576METHODS FOR N-TYPE DOPING OF GRAPHENE, AND N-TYPE-DOPED GRAPHENE COMPOSITIONS
Jeong-Sun Moon, Steven S. Bui
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,940,576Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart summarizing an exemplary method for producing n- doped graphene, according to some embodiments of the invention. [0022]
FIG. 2 is a flowchart summarizing an exemplary method for producing n- doped graphene, according to some embodiments of the invention. [0023]
FIG. 3 is a plot of sheet carrier concentration and sheet resistance versus phosphine doping time for n-doped graphene, according to an embodiment in Example …
FIG. 4 is a table of electrical results for phosphine doping of graphene using different doping methods and substrates, as described in Example 2. [0025]
FIG. 5 is a table of electrical results for phosphine doping of graphene on SiC substrates, as described in Example 3.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of n-type doping of graphene, said method comprising introducing a phosphorus-containing and hydrogen-containing dopant fluid to a surface of graphene, under effective conditions in a vacuum chamber at a pressure greater than 10 torr and less than 50 torr, to dope said graphene with phosphine fragments each consisting of phosphorus in molecular combination with hydrogen, wherein said phosphorus-containing and hydrogen-containing dopant fluid is selected from the group consisting of phosphine, sta rt ing phosphine fragments, phosphine derivatives, and combinations thereof, and wherein said doping is substitutional doping of said phosphine fragments into said graphene.
The method of claim 1, wherein said phosphorus-containing dopant fluid comprises phosphine gas.
The method of claim 1, wherein said phosphorus-containing dopant fluid comprises a phosphine derivative, PR 1 R₂R₃ wherein each of R 1, R 2, and R₃ are independently selected from hydrogen, a hydroxyl group, or hydrocarbon groups capable of bonding with phosphorus, and wherein at least one of R 1, R 2, and R₃ is not hydrogen.
The method of claim 1, wherein said phosphorus-containing dopant fluid comprises a halogenated phosphine derivative.
The method of claim 1, wherein said phosphorus-containing dopant fluid comprises phosphine oxide or a phosphine oxide derivative. Page 2 of 14 Application No. 13/239,673 Attorney Docket No. 101295 previously presented
The method of claim 1, said method comprising incorporating hydrogen into said graphene during said doping.
The method of claim 1, wherein said graphene is supported on a substrate.
canceled
A method of forming n-doped graphene, said method comprising growing epitaxial graphene by carbon deposition on a substrate layer while simultaneously introducing a phosphorus-containing and hydrogen-containing dopant fluid in a vacuum chamber at a pressure greater than 10 torr and less than 50 torr, to dope said graphene, during graphene growth, with p hosphine fragments each consisting of phosphorus in molecular combination with hydrogen phosphors-atoms-er-with phn, wherein said phosphorus-containing and hydrogen-containing dopant fluid is selected from the group consisting of phosphine, sta rt ing phosphine fragments, phosphine derivatives, and combinations thereof, wherein said doping is substitutional doping of said p hosphine fragments phosphorus atoms or of s into said graphene, and wherein said substrate layer is selected from the group consisting of Si (111), Si (100), SiC, and combinations thereof.
The method of claim 9, wherein said phosphorus-containing dopant fluid comprises phosphine gas.
The method of claim 9, wherein said phosphorus-containing dopant fluid comprises a phosphine derivative, PR 1 R₂R₃ wherein each of R 1, R2, and R₃ are independently selected from hydrogen, a hydroxyl group, or hydrocarbon groups capable of bonding with phosphorus, and wherein at least one of R 1, R 2, and R₃ is not hydrogen. Page 3 of 14 Application No. 13/239,673 Attorney Docket No. 101295
The method of claim 9, wherein said phosphorus-containing dopant fluid comprises a halogenated phosphine derivative.
The method of claim 9, wherein said phosphorus-containing dopant fluid comprises phosphine oxide or a phosphine oxide derivative. previously presented
The method of claim 9, said method comprising incorporating hydrogen into said graphene during said doping.
The method of claim 9, wherein said substrate layer is selected from Si (111) or Si (100).
canceled
An n-doped graphene composition comprising graphene and phosphine fragments that are substitutionally doped within said graphene, wherein said phosphine fragments eempr-is e each consist of phosphorus in molecular combination with hydrogen, and wherein said phosphine fragments do not include PH 3. currently amended
A multi-layer graphene composition wherein at least one graphene layer comprises an n-doped graphene composition in accordance with claim 17.
A graphene field-effect transistor comprising an n-doped graphene composition in accordance with claim 17.
canceled
An n-doped graphene composition substitutionally n-type- doped with fragments of a phosphine derivative, PR 1 R₂R3, wherein each of R 1, R 2, and R₃ are independently selected from hydrogen, a hydroxyl group, or hydrocarbon groups capable of bonding with phosphorus, wherein at least one of R 1, R 2, and R₃ is not hydrogen, a n d wherein said fragments of a phosphine derivative each consist of eempr-is e, in molecular combination, phosphorus and at least one of R I, 2, and R3, h nat n 4 -and- that is-net-hydregen and wherein said fragments do not include PR iRR itself. Page 4 of 14 Application No. 13/239,673 Attorney Docket No. 101295 currently amended
canceled
A supported graphene composition comprising an n-doped graphene composition comprising graphene and phosphine fragments that are substitutionally doped within said graphene, wherein said phosphine fragments eempise each consist of phosphorus in molecular combination with hydrogen, and wherein said phosphine fragments do not include PH 3; said supported graphene composition further comprising a substrate for said graphene, wherein said substrate is selected from the group consisting of Si (111), Si (100), SiC, and combinations thereof.
The supported graphene composition of claim 21, wherein said substrate is doped with said phosphine or phosphine fragments.
An electronics device comprising an n-doped graphene composition in accordance with claim
Layer stacks claimed or described, ordered top of device to substrate.
supported graphene composition
multi-layer graphene composition
graphene field-effect transistor
electronics device
Materials described outside the worked examples.
graphene
phosphine gas
PH₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a plot of sheet carrier concentration and sheet resistance versus phosphine doping time for n-doped graphene, according to an embodiment in Example …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sheet resistance well below 200 ohm/sq observed for n-doped graphene | ≤ 200 ohm/sq | n-doped graphene |
sheet carrier concentration above 5 x 10^13 cm^-2 observed for n-doped graphene | ≥ 50000000000000 cm⁻² |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,940,576Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart summarizing an exemplary method for producing n- doped graphene, according to some embodiments of the invention. [0022]
FIG. 2 is a flowchart summarizing an exemplary method for producing n- doped graphene, according to some embodiments of the invention. [0023]
FIG. 3 is a plot of sheet carrier concentration and sheet resistance versus phosphine doping time for n-doped graphene, according to an embodiment in Example …
FIG. 4 is a table of electrical results for phosphine doping of graphene using different doping methods and substrates, as described in Example 2. [0025]
FIG. 5 is a table of electrical results for phosphine doping of graphene on SiC substrates, as described in Example 3.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of n-type doping of graphene, said method comprising introducing a phosphorus-containing and hydrogen-containing dopant fluid to a surface of graphene, under effective conditions in a vacuum chamber at a pressure greater than 10 torr and less than 50 torr, to dope said graphene with phosphine fragments each consisting of phosphorus in molecular combination with hydrogen, wherein said phosphorus-containing and hydrogen-containing dopant fluid is selected from the group consisting of phosphine, sta rt ing phosphine fragments, phosphine derivatives, and combinations thereof, and wherein said doping is substitutional doping of said phosphine fragments into said graphene.
The method of claim 1, wherein said phosphorus-containing dopant fluid comprises phosphine gas.
The method of claim 1, wherein said phosphorus-containing dopant fluid comprises a phosphine derivative, PR 1 R₂R₃ wherein each of R 1, R 2, and R₃ are independently selected from hydrogen, a hydroxyl group, or hydrocarbon groups capable of bonding with phosphorus, and wherein at least one of R 1, R 2, and R₃ is not hydrogen.
The method of claim 1, wherein said phosphorus-containing dopant fluid comprises a halogenated phosphine derivative.
The method of claim 1, wherein said phosphorus-containing dopant fluid comprises phosphine oxide or a phosphine oxide derivative. Page 2 of 14 Application No. 13/239,673 Attorney Docket No. 101295 previously presented
The method of claim 1, said method comprising incorporating hydrogen into said graphene during said doping.
The method of claim 1, wherein said graphene is supported on a substrate.
canceled
A method of forming n-doped graphene, said method comprising growing epitaxial graphene by carbon deposition on a substrate layer while simultaneously introducing a phosphorus-containing and hydrogen-containing dopant fluid in a vacuum chamber at a pressure greater than 10 torr and less than 50 torr, to dope said graphene, during graphene growth, with p hosphine fragments each consisting of phosphorus in molecular combination with hydrogen phosphors-atoms-er-with phn, wherein said phosphorus-containing and hydrogen-containing dopant fluid is selected from the group consisting of phosphine, sta rt ing phosphine fragments, phosphine derivatives, and combinations thereof, wherein said doping is substitutional doping of said p hosphine fragments phosphorus atoms or of s into said graphene, and wherein said substrate layer is selected from the group consisting of Si (111), Si (100), SiC, and combinations thereof.
The method of claim 9, wherein said phosphorus-containing dopant fluid comprises phosphine gas.
The method of claim 9, wherein said phosphorus-containing dopant fluid comprises a phosphine derivative, PR 1 R₂R₃ wherein each of R 1, R2, and R₃ are independently selected from hydrogen, a hydroxyl group, or hydrocarbon groups capable of bonding with phosphorus, and wherein at least one of R 1, R 2, and R₃ is not hydrogen. Page 3 of 14 Application No. 13/239,673 Attorney Docket No. 101295
The method of claim 9, wherein said phosphorus-containing dopant fluid comprises a halogenated phosphine derivative.
The method of claim 9, wherein said phosphorus-containing dopant fluid comprises phosphine oxide or a phosphine oxide derivative. previously presented
The method of claim 9, said method comprising incorporating hydrogen into said graphene during said doping.
The method of claim 9, wherein said substrate layer is selected from Si (111) or Si (100).
canceled
An n-doped graphene composition comprising graphene and phosphine fragments that are substitutionally doped within said graphene, wherein said phosphine fragments eempr-is e each consist of phosphorus in molecular combination with hydrogen, and wherein said phosphine fragments do not include PH 3. currently amended
A multi-layer graphene composition wherein at least one graphene layer comprises an n-doped graphene composition in accordance with claim 17.
A graphene field-effect transistor comprising an n-doped graphene composition in accordance with claim 17.
canceled
An n-doped graphene composition substitutionally n-type- doped with fragments of a phosphine derivative, PR 1 R₂R3, wherein each of R 1, R 2, and R₃ are independently selected from hydrogen, a hydroxyl group, or hydrocarbon groups capable of bonding with phosphorus, wherein at least one of R 1, R 2, and R₃ is not hydrogen, a n d wherein said fragments of a phosphine derivative each consist of eempr-is e, in molecular combination, phosphorus and at least one of R I, 2, and R3, h nat n 4 -and- that is-net-hydregen and wherein said fragments do not include PR iRR itself. Page 4 of 14 Application No. 13/239,673 Attorney Docket No. 101295 currently amended
canceled
A supported graphene composition comprising an n-doped graphene composition comprising graphene and phosphine fragments that are substitutionally doped within said graphene, wherein said phosphine fragments eempise each consist of phosphorus in molecular combination with hydrogen, and wherein said phosphine fragments do not include PH 3; said supported graphene composition further comprising a substrate for said graphene, wherein said substrate is selected from the group consisting of Si (111), Si (100), SiC, and combinations thereof.
The supported graphene composition of claim 21, wherein said substrate is doped with said phosphine or phosphine fragments.
An electronics device comprising an n-doped graphene composition in accordance with claim
Layer stacks claimed or described, ordered top of device to substrate.
supported graphene composition
multi-layer graphene composition
graphene field-effect transistor
electronics device
Materials described outside the worked examples.
graphene
phosphine gas
PH₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a plot of sheet carrier concentration and sheet resistance versus phosphine doping time for n-doped graphene, according to an embodiment in Example …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sheet resistance well below 200 ohm/sq observed for n-doped graphene | ≤ 200 ohm/sq | n-doped graphene |
sheet carrier concentration above 5 x 10^13 cm^-2 observed for n-doped graphene | ≥ 50000000000000 cm⁻² |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,940,576Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart summarizing an exemplary method for producing n- doped graphene, according to some embodiments of the invention. [0022]
FIG. 2 is a flowchart summarizing an exemplary method for producing n- doped graphene, according to some embodiments of the invention. [0023]
FIG. 3 is a plot of sheet carrier concentration and sheet resistance versus phosphine doping time for n-doped graphene, according to an embodiment in Example …
FIG. 4 is a table of electrical results for phosphine doping of graphene using different doping methods and substrates, as described in Example 2. [0025]
FIG. 5 is a table of electrical results for phosphine doping of graphene on SiC substrates, as described in Example 3.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of n-type doping of graphene, said method comprising introducing a phosphorus-containing and hydrogen-containing dopant fluid to a surface of graphene, under effective conditions in a vacuum chamber at a pressure greater than 10 torr and less than 50 torr, to dope said graphene with phosphine fragments each consisting of phosphorus in molecular combination with hydrogen, wherein said phosphorus-containing and hydrogen-containing dopant fluid is selected from the group consisting of phosphine, sta rt ing phosphine fragments, phosphine derivatives, and combinations thereof, and wherein said doping is substitutional doping of said phosphine fragments into said graphene.
The method of claim 1, wherein said phosphorus-containing dopant fluid comprises phosphine gas.
The method of claim 1, wherein said phosphorus-containing dopant fluid comprises a phosphine derivative, PR 1 R₂R₃ wherein each of R 1, R 2, and R₃ are independently selected from hydrogen, a hydroxyl group, or hydrocarbon groups capable of bonding with phosphorus, and wherein at least one of R 1, R 2, and R₃ is not hydrogen.
The method of claim 1, wherein said phosphorus-containing dopant fluid comprises a halogenated phosphine derivative.
The method of claim 1, wherein said phosphorus-containing dopant fluid comprises phosphine oxide or a phosphine oxide derivative. Page 2 of 14 Application No. 13/239,673 Attorney Docket No. 101295 previously presented
The method of claim 1, said method comprising incorporating hydrogen into said graphene during said doping.
The method of claim 1, wherein said graphene is supported on a substrate.
canceled
A method of forming n-doped graphene, said method comprising growing epitaxial graphene by carbon deposition on a substrate layer while simultaneously introducing a phosphorus-containing and hydrogen-containing dopant fluid in a vacuum chamber at a pressure greater than 10 torr and less than 50 torr, to dope said graphene, during graphene growth, with p hosphine fragments each consisting of phosphorus in molecular combination with hydrogen phosphors-atoms-er-with phn, wherein said phosphorus-containing and hydrogen-containing dopant fluid is selected from the group consisting of phosphine, sta rt ing phosphine fragments, phosphine derivatives, and combinations thereof, wherein said doping is substitutional doping of said p hosphine fragments phosphorus atoms or of s into said graphene, and wherein said substrate layer is selected from the group consisting of Si (111), Si (100), SiC, and combinations thereof.
The method of claim 9, wherein said phosphorus-containing dopant fluid comprises phosphine gas.
The method of claim 9, wherein said phosphorus-containing dopant fluid comprises a phosphine derivative, PR 1 R₂R₃ wherein each of R 1, R2, and R₃ are independently selected from hydrogen, a hydroxyl group, or hydrocarbon groups capable of bonding with phosphorus, and wherein at least one of R 1, R 2, and R₃ is not hydrogen. Page 3 of 14 Application No. 13/239,673 Attorney Docket No. 101295
The method of claim 9, wherein said phosphorus-containing dopant fluid comprises a halogenated phosphine derivative.
The method of claim 9, wherein said phosphorus-containing dopant fluid comprises phosphine oxide or a phosphine oxide derivative. previously presented
The method of claim 9, said method comprising incorporating hydrogen into said graphene during said doping.
The method of claim 9, wherein said substrate layer is selected from Si (111) or Si (100).
canceled
An n-doped graphene composition comprising graphene and phosphine fragments that are substitutionally doped within said graphene, wherein said phosphine fragments eempr-is e each consist of phosphorus in molecular combination with hydrogen, and wherein said phosphine fragments do not include PH 3. currently amended
A multi-layer graphene composition wherein at least one graphene layer comprises an n-doped graphene composition in accordance with claim 17.
A graphene field-effect transistor comprising an n-doped graphene composition in accordance with claim 17.
canceled
An n-doped graphene composition substitutionally n-type- doped with fragments of a phosphine derivative, PR 1 R₂R3, wherein each of R 1, R 2, and R₃ are independently selected from hydrogen, a hydroxyl group, or hydrocarbon groups capable of bonding with phosphorus, wherein at least one of R 1, R 2, and R₃ is not hydrogen, a n d wherein said fragments of a phosphine derivative each consist of eempr-is e, in molecular combination, phosphorus and at least one of R I, 2, and R3, h nat n 4 -and- that is-net-hydregen and wherein said fragments do not include PR iRR itself. Page 4 of 14 Application No. 13/239,673 Attorney Docket No. 101295 currently amended
canceled
A supported graphene composition comprising an n-doped graphene composition comprising graphene and phosphine fragments that are substitutionally doped within said graphene, wherein said phosphine fragments eempise each consist of phosphorus in molecular combination with hydrogen, and wherein said phosphine fragments do not include PH 3; said supported graphene composition further comprising a substrate for said graphene, wherein said substrate is selected from the group consisting of Si (111), Si (100), SiC, and combinations thereof.
The supported graphene composition of claim 21, wherein said substrate is doped with said phosphine or phosphine fragments.
An electronics device comprising an n-doped graphene composition in accordance with claim
Layer stacks claimed or described, ordered top of device to substrate.
supported graphene composition
multi-layer graphene composition
graphene field-effect transistor
electronics device
Materials described outside the worked examples.
graphene
phosphine gas
PH₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a plot of sheet carrier concentration and sheet resistance versus phosphine doping time for n-doped graphene, according to an embodiment in Example …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sheet resistance well below 200 ohm/sq observed for n-doped graphene | ≤ 200 ohm/sq | n-doped graphene |
sheet carrier concentration above 5 x 10^13 cm^-2 observed for n-doped graphene | ≥ 50000000000000 cm⁻² |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,940,576Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart summarizing an exemplary method for producing n- doped graphene, according to some embodiments of the invention. [0022]
FIG. 2 is a flowchart summarizing an exemplary method for producing n- doped graphene, according to some embodiments of the invention. [0023]
FIG. 3 is a plot of sheet carrier concentration and sheet resistance versus phosphine doping time for n-doped graphene, according to an embodiment in Example …
FIG. 4 is a table of electrical results for phosphine doping of graphene using different doping methods and substrates, as described in Example 2. [0025]
FIG. 5 is a table of electrical results for phosphine doping of graphene on SiC substrates, as described in Example 3.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of n-type doping of graphene, said method comprising introducing a phosphorus-containing and hydrogen-containing dopant fluid to a surface of graphene, under effective conditions in a vacuum chamber at a pressure greater than 10 torr and less than 50 torr, to dope said graphene with phosphine fragments each consisting of phosphorus in molecular combination with hydrogen, wherein said phosphorus-containing and hydrogen-containing dopant fluid is selected from the group consisting of phosphine, sta rt ing phosphine fragments, phosphine derivatives, and combinations thereof, and wherein said doping is substitutional doping of said phosphine fragments into said graphene.
The method of claim 1, wherein said phosphorus-containing dopant fluid comprises phosphine gas.
The method of claim 1, wherein said phosphorus-containing dopant fluid comprises a phosphine derivative, PR 1 R₂R₃ wherein each of R 1, R 2, and R₃ are independently selected from hydrogen, a hydroxyl group, or hydrocarbon groups capable of bonding with phosphorus, and wherein at least one of R 1, R 2, and R₃ is not hydrogen.
The method of claim 1, wherein said phosphorus-containing dopant fluid comprises a halogenated phosphine derivative.
The method of claim 1, wherein said phosphorus-containing dopant fluid comprises phosphine oxide or a phosphine oxide derivative. Page 2 of 14 Application No. 13/239,673 Attorney Docket No. 101295 previously presented
The method of claim 1, said method comprising incorporating hydrogen into said graphene during said doping.
The method of claim 1, wherein said graphene is supported on a substrate.
canceled
A method of forming n-doped graphene, said method comprising growing epitaxial graphene by carbon deposition on a substrate layer while simultaneously introducing a phosphorus-containing and hydrogen-containing dopant fluid in a vacuum chamber at a pressure greater than 10 torr and less than 50 torr, to dope said graphene, during graphene growth, with p hosphine fragments each consisting of phosphorus in molecular combination with hydrogen phosphors-atoms-er-with phn, wherein said phosphorus-containing and hydrogen-containing dopant fluid is selected from the group consisting of phosphine, sta rt ing phosphine fragments, phosphine derivatives, and combinations thereof, wherein said doping is substitutional doping of said p hosphine fragments phosphorus atoms or of s into said graphene, and wherein said substrate layer is selected from the group consisting of Si (111), Si (100), SiC, and combinations thereof.
The method of claim 9, wherein said phosphorus-containing dopant fluid comprises phosphine gas.
The method of claim 9, wherein said phosphorus-containing dopant fluid comprises a phosphine derivative, PR 1 R₂R₃ wherein each of R 1, R2, and R₃ are independently selected from hydrogen, a hydroxyl group, or hydrocarbon groups capable of bonding with phosphorus, and wherein at least one of R 1, R 2, and R₃ is not hydrogen. Page 3 of 14 Application No. 13/239,673 Attorney Docket No. 101295
The method of claim 9, wherein said phosphorus-containing dopant fluid comprises a halogenated phosphine derivative.
The method of claim 9, wherein said phosphorus-containing dopant fluid comprises phosphine oxide or a phosphine oxide derivative. previously presented
The method of claim 9, said method comprising incorporating hydrogen into said graphene during said doping.
The method of claim 9, wherein said substrate layer is selected from Si (111) or Si (100).
canceled
An n-doped graphene composition comprising graphene and phosphine fragments that are substitutionally doped within said graphene, wherein said phosphine fragments eempr-is e each consist of phosphorus in molecular combination with hydrogen, and wherein said phosphine fragments do not include PH 3. currently amended
A multi-layer graphene composition wherein at least one graphene layer comprises an n-doped graphene composition in accordance with claim 17.
A graphene field-effect transistor comprising an n-doped graphene composition in accordance with claim 17.
canceled
An n-doped graphene composition substitutionally n-type- doped with fragments of a phosphine derivative, PR 1 R₂R3, wherein each of R 1, R 2, and R₃ are independently selected from hydrogen, a hydroxyl group, or hydrocarbon groups capable of bonding with phosphorus, wherein at least one of R 1, R 2, and R₃ is not hydrogen, a n d wherein said fragments of a phosphine derivative each consist of eempr-is e, in molecular combination, phosphorus and at least one of R I, 2, and R3, h nat n 4 -and- that is-net-hydregen and wherein said fragments do not include PR iRR itself. Page 4 of 14 Application No. 13/239,673 Attorney Docket No. 101295 currently amended
canceled
A supported graphene composition comprising an n-doped graphene composition comprising graphene and phosphine fragments that are substitutionally doped within said graphene, wherein said phosphine fragments eempise each consist of phosphorus in molecular combination with hydrogen, and wherein said phosphine fragments do not include PH 3; said supported graphene composition further comprising a substrate for said graphene, wherein said substrate is selected from the group consisting of Si (111), Si (100), SiC, and combinations thereof.
The supported graphene composition of claim 21, wherein said substrate is doped with said phosphine or phosphine fragments.
An electronics device comprising an n-doped graphene composition in accordance with claim
Layer stacks claimed or described, ordered top of device to substrate.
supported graphene composition
multi-layer graphene composition
graphene field-effect transistor
electronics device
Materials described outside the worked examples.
graphene
phosphine gas
PH₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a plot of sheet carrier concentration and sheet resistance versus phosphine doping time for n-doped graphene, according to an embodiment in Example …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sheet resistance well below 200 ohm/sq observed for n-doped graphene | ≤ 200 ohm/sq | n-doped graphene |
sheet carrier concentration above 5 x 10^13 cm^-2 observed for n-doped graphene | ≥ 50000000000000 cm⁻² |
Related documents with shared materials, methods, properties, or citations.
phosphine derivative
PR₁R₂R₃
halogenated phosphine derivative
phosphine oxide or phosphine oxide derivative
Si (111)
Si
SiC
phosphine fragments
n-doped graphene
diphosphine
P₂H₄
FIG. 4 is a table of electrical results for phosphine doping of graphene using different doping methods and substrates, as described in Example 2. [0025]
FIG. 5 is a table of electrical results for phosphine doping of graphene on SiC substrates, as described in Example 3.
n-doped graphene |
Pressure | 10–760 torr | — |
Duration | 60–86400 s | — |
Duration | 600–3600 s | — |
Temperature | 600–900 °C | — |
Pressure | 10–50 torr | — |
Thickness | 10–100 mm | — |
Duration | ≤ 1 hour | — |
Duration | ≤ 1 minute | — |
Temperature | ≤ 400 °C | — |
Temperature | ≤ 1200 °C | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 1 nm | — |
Pressure | ≤ 50 torr | — |
Pressure | ≥ 10 torr | — |
phosphine derivative
PR₁R₂R₃
halogenated phosphine derivative
phosphine oxide or phosphine oxide derivative
Si (111)
Si
SiC
phosphine fragments
n-doped graphene
diphosphine
P₂H₄
FIG. 4 is a table of electrical results for phosphine doping of graphene using different doping methods and substrates, as described in Example 2. [0025]
FIG. 5 is a table of electrical results for phosphine doping of graphene on SiC substrates, as described in Example 3.
n-doped graphene |
Pressure | 10–760 torr | — |
Duration | 60–86400 s | — |
Duration | 600–3600 s | — |
Temperature | 600–900 °C | — |
Pressure | 10–50 torr | — |
Thickness | 10–100 mm | — |
Duration | ≤ 1 hour | — |
Duration | ≤ 1 minute | — |
Temperature | ≤ 400 °C | — |
Temperature | ≤ 1200 °C | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 1 nm | — |
Pressure | ≤ 50 torr | — |
Pressure | ≥ 10 torr | — |
phosphine derivative
PR₁R₂R₃
halogenated phosphine derivative
phosphine oxide or phosphine oxide derivative
Si (111)
Si
SiC
phosphine fragments
n-doped graphene
diphosphine
P₂H₄
FIG. 4 is a table of electrical results for phosphine doping of graphene using different doping methods and substrates, as described in Example 2. [0025]
FIG. 5 is a table of electrical results for phosphine doping of graphene on SiC substrates, as described in Example 3.
n-doped graphene |
Pressure | 10–760 torr | — |
Duration | 60–86400 s | — |
Duration | 600–3600 s | — |
Temperature | 600–900 °C | — |
Pressure | 10–50 torr | — |
Thickness | 10–100 mm | — |
Duration | ≤ 1 hour | — |
Duration | ≤ 1 minute | — |
Temperature | ≤ 400 °C | — |
Temperature | ≤ 1200 °C | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 1 nm | — |
Pressure | ≤ 50 torr | — |
Pressure | ≥ 10 torr | — |
phosphine derivative
PR₁R₂R₃
halogenated phosphine derivative
phosphine oxide or phosphine oxide derivative
Si (111)
Si
SiC
phosphine fragments
n-doped graphene
diphosphine
P₂H₄
FIG. 4 is a table of electrical results for phosphine doping of graphene using different doping methods and substrates, as described in Example 2. [0025]
FIG. 5 is a table of electrical results for phosphine doping of graphene on SiC substrates, as described in Example 3.
n-doped graphene |
Pressure | 10–760 torr | — |
Duration | 60–86400 s | — |
Duration | 600–3600 s | — |
Temperature | 600–900 °C | — |
Pressure | 10–50 torr | — |
Thickness | 10–100 mm | — |
Duration | ≤ 1 hour | — |
Duration | ≤ 1 minute | — |
Temperature | ≤ 400 °C | — |
Temperature | ≤ 1200 °C | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 1 nm | — |
Pressure | ≤ 50 torr | — |
Pressure | ≥ 10 torr | — |