A method for fa bricating a grapbene nano ribb on, sa id method comp risin g th e ste ps of: prep ari ng a ma sk for application on a substrate, the mask including a continuous line of masking m ateria l sp ira ling outward fr om a first en d o f t h e line to a sec ond end of t he line; depo sitin g a graphene lay er ov er a surface of t he s u bstra te; applying the mask to th e s ubst rate o ver the graphene lay er to achieve a masked po rti on of the graphene la yer; f irst re moving an unmasked portion of the graphen e la y er from th e surface of the substrate; and second re moving the masking m a terial from a renaining porton of the graphen e la yer to leave a c o nti nuou s s p ira l li ne of graphene o n t h e surfac e o f the substrate c or res ponding with the mask.

(Origi nal) T he m eth od o f C laim 1 wherein sai d steps o f a pplying, first removing and sec ond re moving are acc omp lis hed using a photo lit hographic sy ste m.

The method of C lai m 1 w herein said step of first re moving compri ses treati ng the substrate with a first etch ant that i s s u bsta n tia lly non -reacti ve with the masking material.

5. (Orig inal) T he m eth od of C lai m 1 wh erein said step o f sec ond re mo vin g com prises treatin g the su b strate with a second e tch a nt that is su b stanti a lly non-re acti ve with the graphe ne.

The method of Claim I wherein i n said step of preparing, the continuous line of masking material is about L.1 microns or less in width SVG 13944703.09-18-2014.I08B₈ZU₈PXXIFW3.CLM.1.svg 0.16 6 Black and white metho d f or fabricating a graphene nanoribbon, said m eth od compr isi ng th e st eps of: preparing a mask for application on a substra te, the mas k i ncluding a continuous line of masking material spiraling outward from a first end o f t he line to a second end of the line. whe rei n conc ent ric arcuate portions o f t he continuous line of masking material are spaced apart from one another by about 2.0 microns or less i: de ositin a ra hene la er over a surface of the substrate; _{__}Man~te msk to the substrate o ver the grap hene layer t o achieve a mas ksed p ortion o t the graphe ne l ayer: first removing an unmasked portion of the graphene layer from the surface of the substrate; and seco nd removing the masking mateial from a remaining portion of the graphene layer to leave a continuou s s pir al line of graphene on the surface of the substrate corresponding with the mask.

The method of Claim I wherein i n said step of depos iti ng, the substrate comprises a ceramic wafer.

A graphene nanoribbon comprising: a substrate; and a layer of graphene deposited on a surface of said substrate, wherein a portion of said Page 3 of 10 graphen e layer is re mov ed fr om th e surface o f t h e s ub strate to form a co ntin uo us line of graphene on the surface of said substrate spiraling outward from a first end of the line to a sec o nd e nd o f t h e line.

(Origi nal) T he graplhen e n anoribbon o f C laim 12 wh erein said pootion o f said graphene la y er is re moved fr om the surface of said s ubstra te b y: applying a mask comp rise d of m askin g material to said s ubstr ate over said graphene layer to ac hieve a masked po rti on o f said graphene lay er, said mask ed portio n c o rres ponding with said continuous spir al line; firs t re moving an u nmasked portion o f said graphene la y er fr om th e surface o f s aid substrat e; and sec ond re moving said m askin g mat eria l fr om a re m ainin g pootion o f sai d graphene layer to leave said c o ntin uou s spiral line of graphe ne on th e surface o f said su bst rate.

(Orig inal) The graphen e na noribbon of C lai m 1 2 fur th er c omp risi ng a first co nta ct p ad area form ed fr om said graphene la y er and c o nnected to the fir st end o f said continuou s s p ira l lin e a n d a s e cond c on tact pad a rea f orm ed f rom said graphene la y er and conn ected t o th e second end o f said c o ntinu o us s p ira l line.

16. (Orig inal) T he graphene nan o rib bon o f Clai m 12 w her ei n said c o nti nuous spi ral line f orm ed in sai d graphene la y er exceeds mo re than 5280 feet in len gth fr om the first end to th e se c ond en d.

The graphene nanoribbon of Claim 20 where in said ce ram ic wafer h as a dia meter of about 4 inches or larger. Page 5 of

A method for fa bricating a grapbene nano ribb on, sa id method comp risin g th e ste ps of: prep ari ng a ma sk for application on a substrate, the mask including a continuous line of masking m ateria l sp ira ling outward fr om a first en d o f t h e line to a sec ond end of t he line; depo sitin g a graphene lay er ov er a surface of t he s u bstra te; applying the mask to th e s ubst rate o ver the graphene lay er to achieve a masked po rti on of the graphene la yer; f irst re moving an unmasked portion of the graphen e la y er from th e surface of the substrate; and second re moving the masking m a terial from a renaining porton of the graphen e la yer to leave a c o nti nuou s s p ira l li ne of graphene o n t h e surfac e o f the substrate c or res ponding with the mask.

(Origi nal) T he m eth od o f C laim 1 wherein sai d steps o f a pplying, first removing and sec ond re moving are acc omp lis hed using a photo lit hographic sy ste m.

The method of C lai m 1 w herein said step of first re moving compri ses treati ng the substrate with a first etch ant that i s s u bsta n tia lly non -reacti ve with the masking material.

5. (Orig inal) T he m eth od of C lai m 1 wh erein said step o f sec ond re mo vin g com prises treatin g the su b strate with a second e tch a nt that is su b stanti a lly non-re acti ve with the graphe ne.

The method of Claim I wherein i n said step of preparing, the continuous line of masking material is about L.1 microns or less in width SVG 13944703.09-18-2014.I08B₈ZU₈PXXIFW3.CLM.1.svg 0.16 6 Black and white metho d f or fabricating a graphene nanoribbon, said m eth od compr isi ng th e st eps of: preparing a mask for application on a substra te, the mas k i ncluding a continuous line of masking material spiraling outward from a first end o f t he line to a second end of the line. whe rei n conc ent ric arcuate portions o f t he continuous line of masking material are spaced apart from one another by about 2.0 microns or less i: de ositin a ra hene la er over a surface of the substrate; _{__}Man~te msk to the substrate o ver the grap hene layer t o achieve a mas ksed p ortion o t the graphe ne l ayer: first removing an unmasked portion of the graphene layer from the surface of the substrate; and seco nd removing the masking mateial from a remaining portion of the graphene layer to leave a continuou s s pir al line of graphene on the surface of the substrate corresponding with the mask.

The method of Claim I wherein i n said step of depos iti ng, the substrate comprises a ceramic wafer.

A graphene nanoribbon comprising: a substrate; and a layer of graphene deposited on a surface of said substrate, wherein a portion of said Page 3 of 10 graphen e layer is re mov ed fr om th e surface o f t h e s ub strate to form a co ntin uo us line of graphene on the surface of said substrate spiraling outward from a first end of the line to a sec o nd e nd o f t h e line.

(Origi nal) T he graplhen e n anoribbon o f C laim 12 wh erein said pootion o f said graphene la y er is re moved fr om the surface of said s ubstra te b y: applying a mask comp rise d of m askin g material to said s ubstr ate over said graphene layer to ac hieve a masked po rti on o f said graphene lay er, said mask ed portio n c o rres ponding with said continuous spir al line; firs t re moving an u nmasked portion o f said graphene la y er fr om th e surface o f s aid substrat e; and sec ond re moving said m askin g mat eria l fr om a re m ainin g pootion o f sai d graphene layer to leave said c o ntin uou s spiral line of graphe ne on th e surface o f said su bst rate.

(Orig inal) The graphen e na noribbon of C lai m 1 2 fur th er c omp risi ng a first co nta ct p ad area form ed fr om said graphene la y er and c o nnected to the fir st end o f said continuou s s p ira l lin e a n d a s e cond c on tact pad a rea f orm ed f rom said graphene la y er and conn ected t o th e second end o f said c o ntinu o us s p ira l line.

16. (Orig inal) T he graphene nan o rib bon o f Clai m 12 w her ei n said c o nti nuous spi ral line f orm ed in sai d graphene la y er exceeds mo re than 5280 feet in len gth fr om the first end to th e se c ond en d.

The graphene nanoribbon of Claim 20 where in said ce ram ic wafer h as a dia meter of about 4 inches or larger. Page 5 of

A method for fa bricating a grapbene nano ribb on, sa id method comp risin g th e ste ps of: prep ari ng a ma sk for application on a substrate, the mask including a continuous line of masking m ateria l sp ira ling outward fr om a first en d o f t h e line to a sec ond end of t he line; depo sitin g a graphene lay er ov er a surface of t he s u bstra te; applying the mask to th e s ubst rate o ver the graphene lay er to achieve a masked po rti on of the graphene la yer; f irst re moving an unmasked portion of the graphen e la y er from th e surface of the substrate; and second re moving the masking m a terial from a renaining porton of the graphen e la yer to leave a c o nti nuou s s p ira l li ne of graphene o n t h e surfac e o f the substrate c or res ponding with the mask.

(Origi nal) T he m eth od o f C laim 1 wherein sai d steps o f a pplying, first removing and sec ond re moving are acc omp lis hed using a photo lit hographic sy ste m.

The method of C lai m 1 w herein said step of first re moving compri ses treati ng the substrate with a first etch ant that i s s u bsta n tia lly non -reacti ve with the masking material.

5. (Orig inal) T he m eth od of C lai m 1 wh erein said step o f sec ond re mo vin g com prises treatin g the su b strate with a second e tch a nt that is su b stanti a lly non-re acti ve with the graphe ne.

The method of Claim I wherein i n said step of preparing, the continuous line of masking material is about L.1 microns or less in width SVG 13944703.09-18-2014.I08B₈ZU₈PXXIFW3.CLM.1.svg 0.16 6 Black and white metho d f or fabricating a graphene nanoribbon, said m eth od compr isi ng th e st eps of: preparing a mask for application on a substra te, the mas k i ncluding a continuous line of masking material spiraling outward from a first end o f t he line to a second end of the line. whe rei n conc ent ric arcuate portions o f t he continuous line of masking material are spaced apart from one another by about 2.0 microns or less i: de ositin a ra hene la er over a surface of the substrate; _{__}Man~te msk to the substrate o ver the grap hene layer t o achieve a mas ksed p ortion o t the graphe ne l ayer: first removing an unmasked portion of the graphene layer from the surface of the substrate; and seco nd removing the masking mateial from a remaining portion of the graphene layer to leave a continuou s s pir al line of graphene on the surface of the substrate corresponding with the mask.

The method of Claim I wherein i n said step of depos iti ng, the substrate comprises a ceramic wafer.

A graphene nanoribbon comprising: a substrate; and a layer of graphene deposited on a surface of said substrate, wherein a portion of said Page 3 of 10 graphen e layer is re mov ed fr om th e surface o f t h e s ub strate to form a co ntin uo us line of graphene on the surface of said substrate spiraling outward from a first end of the line to a sec o nd e nd o f t h e line.

(Origi nal) T he graplhen e n anoribbon o f C laim 12 wh erein said pootion o f said graphene la y er is re moved fr om the surface of said s ubstra te b y: applying a mask comp rise d of m askin g material to said s ubstr ate over said graphene layer to ac hieve a masked po rti on o f said graphene lay er, said mask ed portio n c o rres ponding with said continuous spir al line; firs t re moving an u nmasked portion o f said graphene la y er fr om th e surface o f s aid substrat e; and sec ond re moving said m askin g mat eria l fr om a re m ainin g pootion o f sai d graphene layer to leave said c o ntin uou s spiral line of graphe ne on th e surface o f said su bst rate.

(Orig inal) The graphen e na noribbon of C lai m 1 2 fur th er c omp risi ng a first co nta ct p ad area form ed fr om said graphene la y er and c o nnected to the fir st end o f said continuou s s p ira l lin e a n d a s e cond c on tact pad a rea f orm ed f rom said graphene la y er and conn ected t o th e second end o f said c o ntinu o us s p ira l line.

16. (Orig inal) T he graphene nan o rib bon o f Clai m 12 w her ei n said c o nti nuous spi ral line f orm ed in sai d graphene la y er exceeds mo re than 5280 feet in len gth fr om the first end to th e se c ond en d.

The graphene nanoribbon of Claim 20 where in said ce ram ic wafer h as a dia meter of about 4 inches or larger. Page 5 of

A method for fa bricating a grapbene nano ribb on, sa id method comp risin g th e ste ps of: prep ari ng a ma sk for application on a substrate, the mask including a continuous line of masking m ateria l sp ira ling outward fr om a first en d o f t h e line to a sec ond end of t he line; depo sitin g a graphene lay er ov er a surface of t he s u bstra te; applying the mask to th e s ubst rate o ver the graphene lay er to achieve a masked po rti on of the graphene la yer; f irst re moving an unmasked portion of the graphen e la y er from th e surface of the substrate; and second re moving the masking m a terial from a renaining porton of the graphen e la yer to leave a c o nti nuou s s p ira l li ne of graphene o n t h e surfac e o f the substrate c or res ponding with the mask.

(Origi nal) T he m eth od o f C laim 1 wherein sai d steps o f a pplying, first removing and sec ond re moving are acc omp lis hed using a photo lit hographic sy ste m.

The method of C lai m 1 w herein said step of first re moving compri ses treati ng the substrate with a first etch ant that i s s u bsta n tia lly non -reacti ve with the masking material.

5. (Orig inal) T he m eth od of C lai m 1 wh erein said step o f sec ond re mo vin g com prises treatin g the su b strate with a second e tch a nt that is su b stanti a lly non-re acti ve with the graphe ne.

The method of Claim I wherein i n said step of preparing, the continuous line of masking material is about L.1 microns or less in width SVG 13944703.09-18-2014.I08B₈ZU₈PXXIFW3.CLM.1.svg 0.16 6 Black and white metho d f or fabricating a graphene nanoribbon, said m eth od compr isi ng th e st eps of: preparing a mask for application on a substra te, the mas k i ncluding a continuous line of masking material spiraling outward from a first end o f t he line to a second end of the line. whe rei n conc ent ric arcuate portions o f t he continuous line of masking material are spaced apart from one another by about 2.0 microns or less i: de ositin a ra hene la er over a surface of the substrate; _{__}Man~te msk to the substrate o ver the grap hene layer t o achieve a mas ksed p ortion o t the graphe ne l ayer: first removing an unmasked portion of the graphene layer from the surface of the substrate; and seco nd removing the masking mateial from a remaining portion of the graphene layer to leave a continuou s s pir al line of graphene on the surface of the substrate corresponding with the mask.

The method of Claim I wherein i n said step of depos iti ng, the substrate comprises a ceramic wafer.

A graphene nanoribbon comprising: a substrate; and a layer of graphene deposited on a surface of said substrate, wherein a portion of said Page 3 of 10 graphen e layer is re mov ed fr om th e surface o f t h e s ub strate to form a co ntin uo us line of graphene on the surface of said substrate spiraling outward from a first end of the line to a sec o nd e nd o f t h e line.

(Origi nal) T he graplhen e n anoribbon o f C laim 12 wh erein said pootion o f said graphene la y er is re moved fr om the surface of said s ubstra te b y: applying a mask comp rise d of m askin g material to said s ubstr ate over said graphene layer to ac hieve a masked po rti on o f said graphene lay er, said mask ed portio n c o rres ponding with said continuous spir al line; firs t re moving an u nmasked portion o f said graphene la y er fr om th e surface o f s aid substrat e; and sec ond re moving said m askin g mat eria l fr om a re m ainin g pootion o f sai d graphene layer to leave said c o ntin uou s spiral line of graphe ne on th e surface o f said su bst rate.

(Orig inal) The graphen e na noribbon of C lai m 1 2 fur th er c omp risi ng a first co nta ct p ad area form ed fr om said graphene la y er and c o nnected to the fir st end o f said continuou s s p ira l lin e a n d a s e cond c on tact pad a rea f orm ed f rom said graphene la y er and conn ected t o th e second end o f said c o ntinu o us s p ira l line.

16. (Orig inal) T he graphene nan o rib bon o f Clai m 12 w her ei n said c o nti nuous spi ral line f orm ed in sai d graphene la y er exceeds mo re than 5280 feet in len gth fr om the first end to th e se c ond en d.

The graphene nanoribbon of Claim 20 where in said ce ram ic wafer h as a dia meter of about 4 inches or larger. Page 5 of