Patent
US 9,966,491OPTICALLY SWITCHED GRAPHENE/4H-SiC JUNCTION BIPOLAR TRANSISTOR
MVS Chandrashekhar
US
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Patent
Atlas literature
Patent
US 9,966,491Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Currently Amen d ed) A bi- polar de v ice, comprisin g: a semiconductor substrate doped w ith a first dopant, wherein the substrate defines a first surface a n d a second surface; a semiconductor la y er on the first surface of the semiconductor substrate; and a Schottky barrier la y er on the semiconductor layer s whe rein the Schottky barrier layer is positioned above a fi rst portion of the first surface of the semicondu c tor substrate, leaving a second portion of the first surface of the semiconducto r substrate without any Schottky barrier layer thereon, and wherein the semiconductor la y er is positioned between the Schottky barrier layer above the first portion of the fi r st surface of the semiconductor substrate, an d wherein the second portion of the first surfa c e of the semiconductor substrate is without any semiconductor la yer thereon. Currently amended
The device as in claim 1, wherein the semiconductor substrate comprises SiC, and wherein the first dopant is a n n-type dopant. Original
The device as in claim 1, wherein the semiconductor layer comprises S i C, and wherein the semiconductor layer includes a second dopant, which is a p-type dopant. Currently amended
(Ori g inal) The device as in claim 1, wherein the semiconductor layer is directly on the first surface of the se nr iconduc i or substrate. Original
The device as in claim 1, wherein the Scho t tky barrier layer is directly on the p-type layer, and wherein the Schot t ky barrier layer has a thickness of 1 monolayer to about 5 mn onolayers. Original
The device as in claim 1, wherein the Schottky barrier layer comprises grap h ene. Original
The device as in claim 1 3, wherein the second portion of the first surface of the semiconductor substrate is exposed. Currently amended
(O rigina l) The device a s in claim 1, furthe r c omprising a top contact on the Schottky barrier layer. Original
The device as in claim 1, fu rt her comprising: a back contact on the second surface of the semiconductor substrate. Original
(Withdr a wn, Currently Amended) A method of forming a -th e bi-polar device of claim 1, t h e method c omprising: forming a semiconductor layer on a first surface of a semiconductor substrate, wherein the semiconductor substrate comprises a first dopant, and w herein the semiconductor layer comprises a s econd dopant that has an opposite pol a rity than the first dopant; and forming a Schottky barrie r la yer on a first portion of the semiconductor layer, while lea v ing a second portion of the semiconductor layer exposed. Currently amended
. Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
bi-polar device (Schottky emitter bipolar transistor)
Materials described outside the worked examples.
n-type SiC substrate
SiC
graphene Schottky barrier layer
C
nitrogen n-type dopant
N
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene layer optical transparency | 97.7 % | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,966,491Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Currently Amen d ed) A bi- polar de v ice, comprisin g: a semiconductor substrate doped w ith a first dopant, wherein the substrate defines a first surface a n d a second surface; a semiconductor la y er on the first surface of the semiconductor substrate; and a Schottky barrier la y er on the semiconductor layer s whe rein the Schottky barrier layer is positioned above a fi rst portion of the first surface of the semicondu c tor substrate, leaving a second portion of the first surface of the semiconducto r substrate without any Schottky barrier layer thereon, and wherein the semiconductor la y er is positioned between the Schottky barrier layer above the first portion of the fi r st surface of the semiconductor substrate, an d wherein the second portion of the first surfa c e of the semiconductor substrate is without any semiconductor la yer thereon. Currently amended
The device as in claim 1, wherein the semiconductor substrate comprises SiC, and wherein the first dopant is a n n-type dopant. Original
The device as in claim 1, wherein the semiconductor layer comprises S i C, and wherein the semiconductor layer includes a second dopant, which is a p-type dopant. Currently amended
(Ori g inal) The device as in claim 1, wherein the semiconductor layer is directly on the first surface of the se nr iconduc i or substrate. Original
The device as in claim 1, wherein the Scho t tky barrier layer is directly on the p-type layer, and wherein the Schot t ky barrier layer has a thickness of 1 monolayer to about 5 mn onolayers. Original
The device as in claim 1, wherein the Schottky barrier layer comprises grap h ene. Original
The device as in claim 1 3, wherein the second portion of the first surface of the semiconductor substrate is exposed. Currently amended
(O rigina l) The device a s in claim 1, furthe r c omprising a top contact on the Schottky barrier layer. Original
The device as in claim 1, fu rt her comprising: a back contact on the second surface of the semiconductor substrate. Original
(Withdr a wn, Currently Amended) A method of forming a -th e bi-polar device of claim 1, t h e method c omprising: forming a semiconductor layer on a first surface of a semiconductor substrate, wherein the semiconductor substrate comprises a first dopant, and w herein the semiconductor layer comprises a s econd dopant that has an opposite pol a rity than the first dopant; and forming a Schottky barrie r la yer on a first portion of the semiconductor layer, while lea v ing a second portion of the semiconductor layer exposed. Currently amended
. Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
bi-polar device (Schottky emitter bipolar transistor)
Materials described outside the worked examples.
n-type SiC substrate
SiC
graphene Schottky barrier layer
C
nitrogen n-type dopant
N
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene layer optical transparency | 97.7 % | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,966,491Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Currently Amen d ed) A bi- polar de v ice, comprisin g: a semiconductor substrate doped w ith a first dopant, wherein the substrate defines a first surface a n d a second surface; a semiconductor la y er on the first surface of the semiconductor substrate; and a Schottky barrier la y er on the semiconductor layer s whe rein the Schottky barrier layer is positioned above a fi rst portion of the first surface of the semicondu c tor substrate, leaving a second portion of the first surface of the semiconducto r substrate without any Schottky barrier layer thereon, and wherein the semiconductor la y er is positioned between the Schottky barrier layer above the first portion of the fi r st surface of the semiconductor substrate, an d wherein the second portion of the first surfa c e of the semiconductor substrate is without any semiconductor la yer thereon. Currently amended
The device as in claim 1, wherein the semiconductor substrate comprises SiC, and wherein the first dopant is a n n-type dopant. Original
The device as in claim 1, wherein the semiconductor layer comprises S i C, and wherein the semiconductor layer includes a second dopant, which is a p-type dopant. Currently amended
(Ori g inal) The device as in claim 1, wherein the semiconductor layer is directly on the first surface of the se nr iconduc i or substrate. Original
The device as in claim 1, wherein the Scho t tky barrier layer is directly on the p-type layer, and wherein the Schot t ky barrier layer has a thickness of 1 monolayer to about 5 mn onolayers. Original
The device as in claim 1, wherein the Schottky barrier layer comprises grap h ene. Original
The device as in claim 1 3, wherein the second portion of the first surface of the semiconductor substrate is exposed. Currently amended
(O rigina l) The device a s in claim 1, furthe r c omprising a top contact on the Schottky barrier layer. Original
The device as in claim 1, fu rt her comprising: a back contact on the second surface of the semiconductor substrate. Original
(Withdr a wn, Currently Amended) A method of forming a -th e bi-polar device of claim 1, t h e method c omprising: forming a semiconductor layer on a first surface of a semiconductor substrate, wherein the semiconductor substrate comprises a first dopant, and w herein the semiconductor layer comprises a s econd dopant that has an opposite pol a rity than the first dopant; and forming a Schottky barrie r la yer on a first portion of the semiconductor layer, while lea v ing a second portion of the semiconductor layer exposed. Currently amended
. Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
bi-polar device (Schottky emitter bipolar transistor)
Materials described outside the worked examples.
n-type SiC substrate
SiC
graphene Schottky barrier layer
C
nitrogen n-type dopant
N
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene layer optical transparency | 97.7 % | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,966,491Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Currently Amen d ed) A bi- polar de v ice, comprisin g: a semiconductor substrate doped w ith a first dopant, wherein the substrate defines a first surface a n d a second surface; a semiconductor la y er on the first surface of the semiconductor substrate; and a Schottky barrier la y er on the semiconductor layer s whe rein the Schottky barrier layer is positioned above a fi rst portion of the first surface of the semicondu c tor substrate, leaving a second portion of the first surface of the semiconducto r substrate without any Schottky barrier layer thereon, and wherein the semiconductor la y er is positioned between the Schottky barrier layer above the first portion of the fi r st surface of the semiconductor substrate, an d wherein the second portion of the first surfa c e of the semiconductor substrate is without any semiconductor la yer thereon. Currently amended
The device as in claim 1, wherein the semiconductor substrate comprises SiC, and wherein the first dopant is a n n-type dopant. Original
The device as in claim 1, wherein the semiconductor layer comprises S i C, and wherein the semiconductor layer includes a second dopant, which is a p-type dopant. Currently amended
(Ori g inal) The device as in claim 1, wherein the semiconductor layer is directly on the first surface of the se nr iconduc i or substrate. Original
The device as in claim 1, wherein the Scho t tky barrier layer is directly on the p-type layer, and wherein the Schot t ky barrier layer has a thickness of 1 monolayer to about 5 mn onolayers. Original
The device as in claim 1, wherein the Schottky barrier layer comprises grap h ene. Original
The device as in claim 1 3, wherein the second portion of the first surface of the semiconductor substrate is exposed. Currently amended
(O rigina l) The device a s in claim 1, furthe r c omprising a top contact on the Schottky barrier layer. Original
The device as in claim 1, fu rt her comprising: a back contact on the second surface of the semiconductor substrate. Original
(Withdr a wn, Currently Amended) A method of forming a -th e bi-polar device of claim 1, t h e method c omprising: forming a semiconductor layer on a first surface of a semiconductor substrate, wherein the semiconductor substrate comprises a first dopant, and w herein the semiconductor layer comprises a s econd dopant that has an opposite pol a rity than the first dopant; and forming a Schottky barrie r la yer on a first portion of the semiconductor layer, while lea v ing a second portion of the semiconductor layer exposed. Currently amended
. Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
bi-polar device (Schottky emitter bipolar transistor)
Materials described outside the worked examples.
n-type SiC substrate
SiC
graphene Schottky barrier layer
C
nitrogen n-type dopant
N
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene layer optical transparency | 97.7 % | C |
Related documents with shared materials, methods, properties, or citations.
phosphorus n-type dopant
P
nickel top contact
Ni
| 2.9 eV |
C |
Schottky barrier to electrons (graphene/SiC) | 0.3 eV | C |
built-in gain of bi-polar detector device | 300 dimensionless | — |
Thickness | 2–20 nm | — |
Thickness | 2–10 nm | — |
Thickness | 2–5 nm | — |
Pressure | 0.000001 Torr | — |
Thickness | ≤ 1 nm | — |
— | ≤ 0.5 eV | — |
— | ≥ 2 eV | — |
— | ≥ 2.5 eV | — |
Thickness | ≤ 10 µm | — |
INCORPORATION OF FUNCTIONALIZING MOLECULES IN NANO-PATTERNED EPITAXIAL GRAPHENE ELECTRONICS
phosphorus n-type dopant
P
nickel top contact
Ni
| 2.9 eV |
C |
Schottky barrier to electrons (graphene/SiC) | 0.3 eV | C |
built-in gain of bi-polar detector device | 300 dimensionless | — |
Thickness | 2–20 nm | — |
Thickness | 2–10 nm | — |
Thickness | 2–5 nm | — |
Pressure | 0.000001 Torr | — |
Thickness | ≤ 1 nm | — |
— | ≤ 0.5 eV | — |
— | ≥ 2 eV | — |
— | ≥ 2.5 eV | — |
Thickness | ≤ 10 µm | — |
INCORPORATION OF FUNCTIONALIZING MOLECULES IN NANO-PATTERNED EPITAXIAL GRAPHENE ELECTRONICS
phosphorus n-type dopant
P
nickel top contact
Ni
| 2.9 eV |
C |
Schottky barrier to electrons (graphene/SiC) | 0.3 eV | C |
built-in gain of bi-polar detector device | 300 dimensionless | — |
Thickness | 2–20 nm | — |
Thickness | 2–10 nm | — |
Thickness | 2–5 nm | — |
Pressure | 0.000001 Torr | — |
Thickness | ≤ 1 nm | — |
— | ≤ 0.5 eV | — |
— | ≥ 2 eV | — |
— | ≥ 2.5 eV | — |
Thickness | ≤ 10 µm | — |
INCORPORATION OF FUNCTIONALIZING MOLECULES IN NANO-PATTERNED EPITAXIAL GRAPHENE ELECTRONICS
phosphorus n-type dopant
P
nickel top contact
Ni
| 2.9 eV |
C |
Schottky barrier to electrons (graphene/SiC) | 0.3 eV | C |
built-in gain of bi-polar detector device | 300 dimensionless | — |
Thickness | 2–20 nm | — |
Thickness | 2–10 nm | — |
Thickness | 2–5 nm | — |
Pressure | 0.000001 Torr | — |
Thickness | ≤ 1 nm | — |
— | ≤ 0.5 eV | — |
— | ≥ 2 eV | — |
— | ≥ 2.5 eV | — |
Thickness | ≤ 10 µm | — |
INCORPORATION OF FUNCTIONALIZING MOLECULES IN NANO-PATTERNED EPITAXIAL GRAPHENE ELECTRONICS