Patent
US 8,658,488METHOD OF FORMING A SEMICONDUCTOR CHIP WITH GRAPHENE BASED DEVICES IN AN INTERCONNECT STRUCTURE OF THE CHIP
Christos D. Dimitrakopoulos
US
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US 8,658,488Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a semiconductor structure comprising. providing a graphene layer onto at least an upper surface of a first dielectric material, said first dielectric material comprising at least one first conductive region contained therein; forming at least one semiconductor device using the graphene layer as an element of said at least one semiconductor device; forming at least one semiconductor device using the graphene layer as an element of said at least one semiconductor device, wherein said at least one semiconductor device comprises a transistor including a source region located on a first portion of an uppermost surface of the graphene layer and a drain region located on a second portion of the uppermost surface of the graphene layer; and forming a second dielectric material covering the graphene layer, the at least one semiconductor device, and portions of the first dielectric material, wherein said second dielectric material includes at least one second conductive region contained therein, and wherein said at least one second conductive region is in contact with a conductive element of said at least one semiconductor device.
The method of Claim 1 wherein said providing the graphene layer comprises forming the graphene layer on a handle substrate and transferring the graphene layer to the first dielectric material using a layer transfer process.
The method of Claim 1 further comprising forming a conductive filled via into the graphene layer.
The method of Claim 1 further comprising forming a dielectric filled via into the graphene layer.
The method of Claim 1 further comprising forming both a conductive filled via and a dielectric filled via into the graphene layer.
The method of Claim 1 wherein said second dielectric material further comprises at least one additional wiring region formed therein.
The method of Claim 1 further comprising forming at least one additional dielectric material located atop the second dielectric material, wherein said at least one additional dielectric material includes at least one additional conductive region contained therein.
The method of Claim 1 wherein said graphene layer has a bottommost surface comprising a first portion in direct physical with the uppermost surface of the first dielectric material and a second portion in direct physical contact with an uppermost surface of said at least one first conductive region.
The method of Claim 1 wherein said graphene layer contains regions that are modified by substitutional elements including B or N.
The method of Claim 1 wherein said at least one semiconductor device includes a field effect transistor, and wherein at least a portion of said graphene layer is a channel region of said field effect transistor.
The method of Claim [[1]] 19 wherein said forming the at least one semiconductor device comprises forming at least one transistor on said graphene layer.
A method of forming a semiconductor structure comprising: providing a graphene layer onto at least an upper surface of a first dielectric material, said first dielectric material comprising at least one first conductive region contained therein; forming at least one semiconductor device using the graphene layer as an element of said at least one semiconductor device; forming a conductive filled via into the graphene layer; and forming a second dielectric material covering the graphene layer, the at least one semiconductor device, and portions of the first dielectric material, wherein said second dielectric material includes at least one second conductive region contained therein, and wherein said at 6 I:\I BM\ 1 05\26881A\AMEND\26881A.am l.doc least one second conductive region is in contact with a conductive element of said at least one semiconductor device.
A method of forming a semiconductor structure comprising: providing a graphene layer onto at least an upper surface of a first dielectric material, said first dielectric material comprising at least one first conductive region contained therein; forming at least one semiconductor device using the graphene layer as an element of said at least one semiconductor device; forming a dielectric filled via into the graphene layer; and forming a second dielectric material covering the graphene layer, the at least one semiconductor device, and portions of the first dielectric material, wherein said second dielectric material includes at least one second conductive region contained therein, and wherein said at least one second conductive region is in contact with a conductive element of said at least one semiconductor device. 7 I:\ IBM\105\2688 1 A\A M
Layer stacks claimed or described, ordered top of device to substrate.
transistor with graphene layer
graphene field effect transistor
Materials described outside the worked examples.
graphene
first dielectric material
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,658,488Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a semiconductor structure comprising. providing a graphene layer onto at least an upper surface of a first dielectric material, said first dielectric material comprising at least one first conductive region contained therein; forming at least one semiconductor device using the graphene layer as an element of said at least one semiconductor device; forming at least one semiconductor device using the graphene layer as an element of said at least one semiconductor device, wherein said at least one semiconductor device comprises a transistor including a source region located on a first portion of an uppermost surface of the graphene layer and a drain region located on a second portion of the uppermost surface of the graphene layer; and forming a second dielectric material covering the graphene layer, the at least one semiconductor device, and portions of the first dielectric material, wherein said second dielectric material includes at least one second conductive region contained therein, and wherein said at least one second conductive region is in contact with a conductive element of said at least one semiconductor device.
The method of Claim 1 wherein said providing the graphene layer comprises forming the graphene layer on a handle substrate and transferring the graphene layer to the first dielectric material using a layer transfer process.
The method of Claim 1 further comprising forming a conductive filled via into the graphene layer.
The method of Claim 1 further comprising forming a dielectric filled via into the graphene layer.
The method of Claim 1 further comprising forming both a conductive filled via and a dielectric filled via into the graphene layer.
The method of Claim 1 wherein said second dielectric material further comprises at least one additional wiring region formed therein.
The method of Claim 1 further comprising forming at least one additional dielectric material located atop the second dielectric material, wherein said at least one additional dielectric material includes at least one additional conductive region contained therein.
The method of Claim 1 wherein said graphene layer has a bottommost surface comprising a first portion in direct physical with the uppermost surface of the first dielectric material and a second portion in direct physical contact with an uppermost surface of said at least one first conductive region.
The method of Claim 1 wherein said graphene layer contains regions that are modified by substitutional elements including B or N.
The method of Claim 1 wherein said at least one semiconductor device includes a field effect transistor, and wherein at least a portion of said graphene layer is a channel region of said field effect transistor.
The method of Claim [[1]] 19 wherein said forming the at least one semiconductor device comprises forming at least one transistor on said graphene layer.
A method of forming a semiconductor structure comprising: providing a graphene layer onto at least an upper surface of a first dielectric material, said first dielectric material comprising at least one first conductive region contained therein; forming at least one semiconductor device using the graphene layer as an element of said at least one semiconductor device; forming a conductive filled via into the graphene layer; and forming a second dielectric material covering the graphene layer, the at least one semiconductor device, and portions of the first dielectric material, wherein said second dielectric material includes at least one second conductive region contained therein, and wherein said at 6 I:\I BM\ 1 05\26881A\AMEND\26881A.am l.doc least one second conductive region is in contact with a conductive element of said at least one semiconductor device.
A method of forming a semiconductor structure comprising: providing a graphene layer onto at least an upper surface of a first dielectric material, said first dielectric material comprising at least one first conductive region contained therein; forming at least one semiconductor device using the graphene layer as an element of said at least one semiconductor device; forming a dielectric filled via into the graphene layer; and forming a second dielectric material covering the graphene layer, the at least one semiconductor device, and portions of the first dielectric material, wherein said second dielectric material includes at least one second conductive region contained therein, and wherein said at least one second conductive region is in contact with a conductive element of said at least one semiconductor device. 7 I:\ IBM\105\2688 1 A\A M
Layer stacks claimed or described, ordered top of device to substrate.
transistor with graphene layer
graphene field effect transistor
Materials described outside the worked examples.
graphene
first dielectric material
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,658,488Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a semiconductor structure comprising. providing a graphene layer onto at least an upper surface of a first dielectric material, said first dielectric material comprising at least one first conductive region contained therein; forming at least one semiconductor device using the graphene layer as an element of said at least one semiconductor device; forming at least one semiconductor device using the graphene layer as an element of said at least one semiconductor device, wherein said at least one semiconductor device comprises a transistor including a source region located on a first portion of an uppermost surface of the graphene layer and a drain region located on a second portion of the uppermost surface of the graphene layer; and forming a second dielectric material covering the graphene layer, the at least one semiconductor device, and portions of the first dielectric material, wherein said second dielectric material includes at least one second conductive region contained therein, and wherein said at least one second conductive region is in contact with a conductive element of said at least one semiconductor device.
The method of Claim 1 wherein said providing the graphene layer comprises forming the graphene layer on a handle substrate and transferring the graphene layer to the first dielectric material using a layer transfer process.
The method of Claim 1 further comprising forming a conductive filled via into the graphene layer.
The method of Claim 1 further comprising forming a dielectric filled via into the graphene layer.
The method of Claim 1 further comprising forming both a conductive filled via and a dielectric filled via into the graphene layer.
The method of Claim 1 wherein said second dielectric material further comprises at least one additional wiring region formed therein.
The method of Claim 1 further comprising forming at least one additional dielectric material located atop the second dielectric material, wherein said at least one additional dielectric material includes at least one additional conductive region contained therein.
The method of Claim 1 wherein said graphene layer has a bottommost surface comprising a first portion in direct physical with the uppermost surface of the first dielectric material and a second portion in direct physical contact with an uppermost surface of said at least one first conductive region.
The method of Claim 1 wherein said graphene layer contains regions that are modified by substitutional elements including B or N.
The method of Claim 1 wherein said at least one semiconductor device includes a field effect transistor, and wherein at least a portion of said graphene layer is a channel region of said field effect transistor.
The method of Claim [[1]] 19 wherein said forming the at least one semiconductor device comprises forming at least one transistor on said graphene layer.
A method of forming a semiconductor structure comprising: providing a graphene layer onto at least an upper surface of a first dielectric material, said first dielectric material comprising at least one first conductive region contained therein; forming at least one semiconductor device using the graphene layer as an element of said at least one semiconductor device; forming a conductive filled via into the graphene layer; and forming a second dielectric material covering the graphene layer, the at least one semiconductor device, and portions of the first dielectric material, wherein said second dielectric material includes at least one second conductive region contained therein, and wherein said at 6 I:\I BM\ 1 05\26881A\AMEND\26881A.am l.doc least one second conductive region is in contact with a conductive element of said at least one semiconductor device.
A method of forming a semiconductor structure comprising: providing a graphene layer onto at least an upper surface of a first dielectric material, said first dielectric material comprising at least one first conductive region contained therein; forming at least one semiconductor device using the graphene layer as an element of said at least one semiconductor device; forming a dielectric filled via into the graphene layer; and forming a second dielectric material covering the graphene layer, the at least one semiconductor device, and portions of the first dielectric material, wherein said second dielectric material includes at least one second conductive region contained therein, and wherein said at least one second conductive region is in contact with a conductive element of said at least one semiconductor device. 7 I:\ IBM\105\2688 1 A\A M
Layer stacks claimed or described, ordered top of device to substrate.
transistor with graphene layer
graphene field effect transistor
Materials described outside the worked examples.
graphene
first dielectric material
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,658,488Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a semiconductor structure comprising. providing a graphene layer onto at least an upper surface of a first dielectric material, said first dielectric material comprising at least one first conductive region contained therein; forming at least one semiconductor device using the graphene layer as an element of said at least one semiconductor device; forming at least one semiconductor device using the graphene layer as an element of said at least one semiconductor device, wherein said at least one semiconductor device comprises a transistor including a source region located on a first portion of an uppermost surface of the graphene layer and a drain region located on a second portion of the uppermost surface of the graphene layer; and forming a second dielectric material covering the graphene layer, the at least one semiconductor device, and portions of the first dielectric material, wherein said second dielectric material includes at least one second conductive region contained therein, and wherein said at least one second conductive region is in contact with a conductive element of said at least one semiconductor device.
The method of Claim 1 wherein said providing the graphene layer comprises forming the graphene layer on a handle substrate and transferring the graphene layer to the first dielectric material using a layer transfer process.
The method of Claim 1 further comprising forming a conductive filled via into the graphene layer.
The method of Claim 1 further comprising forming a dielectric filled via into the graphene layer.
The method of Claim 1 further comprising forming both a conductive filled via and a dielectric filled via into the graphene layer.
The method of Claim 1 wherein said second dielectric material further comprises at least one additional wiring region formed therein.
The method of Claim 1 further comprising forming at least one additional dielectric material located atop the second dielectric material, wherein said at least one additional dielectric material includes at least one additional conductive region contained therein.
The method of Claim 1 wherein said graphene layer has a bottommost surface comprising a first portion in direct physical with the uppermost surface of the first dielectric material and a second portion in direct physical contact with an uppermost surface of said at least one first conductive region.
The method of Claim 1 wherein said graphene layer contains regions that are modified by substitutional elements including B or N.
The method of Claim 1 wherein said at least one semiconductor device includes a field effect transistor, and wherein at least a portion of said graphene layer is a channel region of said field effect transistor.
The method of Claim [[1]] 19 wherein said forming the at least one semiconductor device comprises forming at least one transistor on said graphene layer.
A method of forming a semiconductor structure comprising: providing a graphene layer onto at least an upper surface of a first dielectric material, said first dielectric material comprising at least one first conductive region contained therein; forming at least one semiconductor device using the graphene layer as an element of said at least one semiconductor device; forming a conductive filled via into the graphene layer; and forming a second dielectric material covering the graphene layer, the at least one semiconductor device, and portions of the first dielectric material, wherein said second dielectric material includes at least one second conductive region contained therein, and wherein said at 6 I:\I BM\ 1 05\26881A\AMEND\26881A.am l.doc least one second conductive region is in contact with a conductive element of said at least one semiconductor device.
A method of forming a semiconductor structure comprising: providing a graphene layer onto at least an upper surface of a first dielectric material, said first dielectric material comprising at least one first conductive region contained therein; forming at least one semiconductor device using the graphene layer as an element of said at least one semiconductor device; forming a dielectric filled via into the graphene layer; and forming a second dielectric material covering the graphene layer, the at least one semiconductor device, and portions of the first dielectric material, wherein said second dielectric material includes at least one second conductive region contained therein, and wherein said at least one second conductive region is in contact with a conductive element of said at least one semiconductor device. 7 I:\ IBM\105\2688 1 A\A M
Layer stacks claimed or described, ordered top of device to substrate.
transistor with graphene layer
graphene field effect transistor
Materials described outside the worked examples.
graphene
first dielectric material
Related documents with shared materials, methods, properties, or citations.
SiC
graphene oxide
hydrazine
N₂H₄
substitutional elements B or N in graphene
SiC
graphene oxide
hydrazine
N₂H₄
substitutional elements B or N in graphene
SiC
graphene oxide
hydrazine
N₂H₄
substitutional elements B or N in graphene
SiC
graphene oxide
hydrazine
N₂H₄
substitutional elements B or N in graphene