Patent
US 9,269,773HOLE DOPING OF GRAPHENE
CHEN, Wei, CHEN, Zhenyu, WEE, Thye Shen Andrew, XIE, Lanfei et al.
NATIONAL UNIVERSITY OF SINGAPORE·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,269,773Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An article comprising: a layer of graphene having a first work function; and a metal oxide film disposed on the layer of graphene, the metal oxide film having a second work function greater than the first work function[,]; and a source electrode and a drain electrode formed on the layer of graphene, the metal oxide film being between the source electrode and the drain electrode, whereby electrons are transferred from the layer of graphene to the metal oxide film, forming a hole accumulation layer in the layer of graphene.
The article of claim 1, wherein the hole accumulation layer has an areal density of holes of up to about 1.0 x 101 3 cm 2.
The article of claim 1, further comprising a substrate, wherein the layer of graphene is disposed on the substrate.
The article of claim 1, wherein the metal oxide film comprises MoO3.
The article of claim 1, wherein the metal oxide film comprises W03.
The article of claim 1, wherein the metal oxide film has a thickness of at least about 0.2 nm.
The article of claim 1, wherein the layer of graphene is ferromagnetic.
canceled
A method of doping graphene, the method comprising: providing a layer of graphene having a first work function; and forming a metal oxide film on the layer of graphene, the metal oxide film having a second work function greater than the first work function[[,]]; and forming a source electrode and a drain electrode on the layer of graphene, the metal oxide film being between the source electrode and the drain electrode, whereby electrons in the layer of graphene are transferred to the metal oxide film, forming a hole accumulation layer in the layer of graphene.
The method of claim 18, further comprising determining a thickness of the metal oxide film on the basis of a target concentration of holes in the hole accumulation layer.
The method of claim 18, wherein providing the layer of graphene includes forming the layer of graphene on a substrate.
The method of claim 18, wherein providing the layer of graphene includes forming the layer of graphene by micromechanical cleaving.
The method of claim 18, wherein providing the layer of graphene includes forming the layer of graphene by reducing a graphene oxide. 4 PATENTS 218005-0021 10133N-PCT/US
The method of claim 18, wherein forming the metal oxide film includes forming the metal oxide film by a vacuum thermal deposition process.
The method of claim 18, wherein forming the metal oxide film includes forming the metal oxide film by a layer-by-layer growth process.
A photodetector comprising: a substrate; a layer of graphene disposed on a surface of the substrate, the layer of graphene having a first work function; a so urc e electrode formed on the layer of graphene; a drain electrode formed on the layer of graphene and separated from the source electrode; and a metal oxide film disposed on the layer of graphene between the source electrode and the drain electrode, the metal oxide film having a second work function greater than the first work function, whereby electrons are transferred from the layer of graphene to the metal oxide film, generating an intrinsic electric field near an interface between the layer of graphene and the metal oxide film. withdrawn
The photodetector of claim 27, wherein a photocurrent is generated in the layer of graphene when incident photons are absorbed by the layer of graphene. withdrawn
(Withdrawn-currently amended) A device comprising: a substrate; a layer of graphene disposed on a surface of the substrate, the layer of graphene having a first work function, the layer of graphene having a first area and a second area adjacent to the first area; a source electrode and a drain electrode formed on the layer of graphene; and a metal oxide film being between the source electrode and the drain electrode, [[a]] the metal oxide film disposed on the first area of the layer of graphene and,-the metal-oxide film- having a second work function greater than the first work function, whereby a p-n junction is formed between the first area and the second area.
The device of claim 30, further comprising a first electrode in contact with the first area of the layer of graphene and a second electrode in contact with the second area of the layer of graphene. withdrawn
The device of claim 30, wherein the substrate comprises n-type silicon carbide. withdrawn
The device of claim 30, wherein electrons are transferred from the first area of the layer of graphene to the metal oxide film such that the first area is p- type. withdrawn
The device of claim 30, wherein the second region of the layer of graphene is n-type. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
hole-doped graphene transistor
graphene p-n junction device
Materials described outside the worked examples.
graphene
metal oxide film
substrate
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Areal Hole Density | 10000000000000 cm⁻² | graphene |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,269,773Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An article comprising: a layer of graphene having a first work function; and a metal oxide film disposed on the layer of graphene, the metal oxide film having a second work function greater than the first work function[,]; and a source electrode and a drain electrode formed on the layer of graphene, the metal oxide film being between the source electrode and the drain electrode, whereby electrons are transferred from the layer of graphene to the metal oxide film, forming a hole accumulation layer in the layer of graphene.
The article of claim 1, wherein the hole accumulation layer has an areal density of holes of up to about 1.0 x 101 3 cm 2.
The article of claim 1, further comprising a substrate, wherein the layer of graphene is disposed on the substrate.
The article of claim 1, wherein the metal oxide film comprises MoO3.
The article of claim 1, wherein the metal oxide film comprises W03.
The article of claim 1, wherein the metal oxide film has a thickness of at least about 0.2 nm.
The article of claim 1, wherein the layer of graphene is ferromagnetic.
canceled
A method of doping graphene, the method comprising: providing a layer of graphene having a first work function; and forming a metal oxide film on the layer of graphene, the metal oxide film having a second work function greater than the first work function[[,]]; and forming a source electrode and a drain electrode on the layer of graphene, the metal oxide film being between the source electrode and the drain electrode, whereby electrons in the layer of graphene are transferred to the metal oxide film, forming a hole accumulation layer in the layer of graphene.
The method of claim 18, further comprising determining a thickness of the metal oxide film on the basis of a target concentration of holes in the hole accumulation layer.
The method of claim 18, wherein providing the layer of graphene includes forming the layer of graphene on a substrate.
The method of claim 18, wherein providing the layer of graphene includes forming the layer of graphene by micromechanical cleaving.
The method of claim 18, wherein providing the layer of graphene includes forming the layer of graphene by reducing a graphene oxide. 4 PATENTS 218005-0021 10133N-PCT/US
The method of claim 18, wherein forming the metal oxide film includes forming the metal oxide film by a vacuum thermal deposition process.
The method of claim 18, wherein forming the metal oxide film includes forming the metal oxide film by a layer-by-layer growth process.
A photodetector comprising: a substrate; a layer of graphene disposed on a surface of the substrate, the layer of graphene having a first work function; a so urc e electrode formed on the layer of graphene; a drain electrode formed on the layer of graphene and separated from the source electrode; and a metal oxide film disposed on the layer of graphene between the source electrode and the drain electrode, the metal oxide film having a second work function greater than the first work function, whereby electrons are transferred from the layer of graphene to the metal oxide film, generating an intrinsic electric field near an interface between the layer of graphene and the metal oxide film. withdrawn
The photodetector of claim 27, wherein a photocurrent is generated in the layer of graphene when incident photons are absorbed by the layer of graphene. withdrawn
(Withdrawn-currently amended) A device comprising: a substrate; a layer of graphene disposed on a surface of the substrate, the layer of graphene having a first work function, the layer of graphene having a first area and a second area adjacent to the first area; a source electrode and a drain electrode formed on the layer of graphene; and a metal oxide film being between the source electrode and the drain electrode, [[a]] the metal oxide film disposed on the first area of the layer of graphene and,-the metal-oxide film- having a second work function greater than the first work function, whereby a p-n junction is formed between the first area and the second area.
The device of claim 30, further comprising a first electrode in contact with the first area of the layer of graphene and a second electrode in contact with the second area of the layer of graphene. withdrawn
The device of claim 30, wherein the substrate comprises n-type silicon carbide. withdrawn
The device of claim 30, wherein electrons are transferred from the first area of the layer of graphene to the metal oxide film such that the first area is p- type. withdrawn
The device of claim 30, wherein the second region of the layer of graphene is n-type. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
hole-doped graphene transistor
graphene p-n junction device
Materials described outside the worked examples.
graphene
metal oxide film
substrate
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Areal Hole Density | 10000000000000 cm⁻² | graphene |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,269,773Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An article comprising: a layer of graphene having a first work function; and a metal oxide film disposed on the layer of graphene, the metal oxide film having a second work function greater than the first work function[,]; and a source electrode and a drain electrode formed on the layer of graphene, the metal oxide film being between the source electrode and the drain electrode, whereby electrons are transferred from the layer of graphene to the metal oxide film, forming a hole accumulation layer in the layer of graphene.
The article of claim 1, wherein the hole accumulation layer has an areal density of holes of up to about 1.0 x 101 3 cm 2.
The article of claim 1, further comprising a substrate, wherein the layer of graphene is disposed on the substrate.
The article of claim 1, wherein the metal oxide film comprises MoO3.
The article of claim 1, wherein the metal oxide film comprises W03.
The article of claim 1, wherein the metal oxide film has a thickness of at least about 0.2 nm.
The article of claim 1, wherein the layer of graphene is ferromagnetic.
canceled
A method of doping graphene, the method comprising: providing a layer of graphene having a first work function; and forming a metal oxide film on the layer of graphene, the metal oxide film having a second work function greater than the first work function[[,]]; and forming a source electrode and a drain electrode on the layer of graphene, the metal oxide film being between the source electrode and the drain electrode, whereby electrons in the layer of graphene are transferred to the metal oxide film, forming a hole accumulation layer in the layer of graphene.
The method of claim 18, further comprising determining a thickness of the metal oxide film on the basis of a target concentration of holes in the hole accumulation layer.
The method of claim 18, wherein providing the layer of graphene includes forming the layer of graphene on a substrate.
The method of claim 18, wherein providing the layer of graphene includes forming the layer of graphene by micromechanical cleaving.
The method of claim 18, wherein providing the layer of graphene includes forming the layer of graphene by reducing a graphene oxide. 4 PATENTS 218005-0021 10133N-PCT/US
The method of claim 18, wherein forming the metal oxide film includes forming the metal oxide film by a vacuum thermal deposition process.
The method of claim 18, wherein forming the metal oxide film includes forming the metal oxide film by a layer-by-layer growth process.
A photodetector comprising: a substrate; a layer of graphene disposed on a surface of the substrate, the layer of graphene having a first work function; a so urc e electrode formed on the layer of graphene; a drain electrode formed on the layer of graphene and separated from the source electrode; and a metal oxide film disposed on the layer of graphene between the source electrode and the drain electrode, the metal oxide film having a second work function greater than the first work function, whereby electrons are transferred from the layer of graphene to the metal oxide film, generating an intrinsic electric field near an interface between the layer of graphene and the metal oxide film. withdrawn
The photodetector of claim 27, wherein a photocurrent is generated in the layer of graphene when incident photons are absorbed by the layer of graphene. withdrawn
(Withdrawn-currently amended) A device comprising: a substrate; a layer of graphene disposed on a surface of the substrate, the layer of graphene having a first work function, the layer of graphene having a first area and a second area adjacent to the first area; a source electrode and a drain electrode formed on the layer of graphene; and a metal oxide film being between the source electrode and the drain electrode, [[a]] the metal oxide film disposed on the first area of the layer of graphene and,-the metal-oxide film- having a second work function greater than the first work function, whereby a p-n junction is formed between the first area and the second area.
The device of claim 30, further comprising a first electrode in contact with the first area of the layer of graphene and a second electrode in contact with the second area of the layer of graphene. withdrawn
The device of claim 30, wherein the substrate comprises n-type silicon carbide. withdrawn
The device of claim 30, wherein electrons are transferred from the first area of the layer of graphene to the metal oxide film such that the first area is p- type. withdrawn
The device of claim 30, wherein the second region of the layer of graphene is n-type. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
hole-doped graphene transistor
graphene p-n junction device
Materials described outside the worked examples.
graphene
metal oxide film
substrate
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Areal Hole Density | 10000000000000 cm⁻² | graphene |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,269,773Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An article comprising: a layer of graphene having a first work function; and a metal oxide film disposed on the layer of graphene, the metal oxide film having a second work function greater than the first work function[,]; and a source electrode and a drain electrode formed on the layer of graphene, the metal oxide film being between the source electrode and the drain electrode, whereby electrons are transferred from the layer of graphene to the metal oxide film, forming a hole accumulation layer in the layer of graphene.
The article of claim 1, wherein the hole accumulation layer has an areal density of holes of up to about 1.0 x 101 3 cm 2.
The article of claim 1, further comprising a substrate, wherein the layer of graphene is disposed on the substrate.
The article of claim 1, wherein the metal oxide film comprises MoO3.
The article of claim 1, wherein the metal oxide film comprises W03.
The article of claim 1, wherein the metal oxide film has a thickness of at least about 0.2 nm.
The article of claim 1, wherein the layer of graphene is ferromagnetic.
canceled
A method of doping graphene, the method comprising: providing a layer of graphene having a first work function; and forming a metal oxide film on the layer of graphene, the metal oxide film having a second work function greater than the first work function[[,]]; and forming a source electrode and a drain electrode on the layer of graphene, the metal oxide film being between the source electrode and the drain electrode, whereby electrons in the layer of graphene are transferred to the metal oxide film, forming a hole accumulation layer in the layer of graphene.
The method of claim 18, further comprising determining a thickness of the metal oxide film on the basis of a target concentration of holes in the hole accumulation layer.
The method of claim 18, wherein providing the layer of graphene includes forming the layer of graphene on a substrate.
The method of claim 18, wherein providing the layer of graphene includes forming the layer of graphene by micromechanical cleaving.
The method of claim 18, wherein providing the layer of graphene includes forming the layer of graphene by reducing a graphene oxide. 4 PATENTS 218005-0021 10133N-PCT/US
The method of claim 18, wherein forming the metal oxide film includes forming the metal oxide film by a vacuum thermal deposition process.
The method of claim 18, wherein forming the metal oxide film includes forming the metal oxide film by a layer-by-layer growth process.
A photodetector comprising: a substrate; a layer of graphene disposed on a surface of the substrate, the layer of graphene having a first work function; a so urc e electrode formed on the layer of graphene; a drain electrode formed on the layer of graphene and separated from the source electrode; and a metal oxide film disposed on the layer of graphene between the source electrode and the drain electrode, the metal oxide film having a second work function greater than the first work function, whereby electrons are transferred from the layer of graphene to the metal oxide film, generating an intrinsic electric field near an interface between the layer of graphene and the metal oxide film. withdrawn
The photodetector of claim 27, wherein a photocurrent is generated in the layer of graphene when incident photons are absorbed by the layer of graphene. withdrawn
(Withdrawn-currently amended) A device comprising: a substrate; a layer of graphene disposed on a surface of the substrate, the layer of graphene having a first work function, the layer of graphene having a first area and a second area adjacent to the first area; a source electrode and a drain electrode formed on the layer of graphene; and a metal oxide film being between the source electrode and the drain electrode, [[a]] the metal oxide film disposed on the first area of the layer of graphene and,-the metal-oxide film- having a second work function greater than the first work function, whereby a p-n junction is formed between the first area and the second area.
The device of claim 30, further comprising a first electrode in contact with the first area of the layer of graphene and a second electrode in contact with the second area of the layer of graphene. withdrawn
The device of claim 30, wherein the substrate comprises n-type silicon carbide. withdrawn
The device of claim 30, wherein electrons are transferred from the first area of the layer of graphene to the metal oxide film such that the first area is p- type. withdrawn
The device of claim 30, wherein the second region of the layer of graphene is n-type. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
hole-doped graphene transistor
graphene p-n junction device
Materials described outside the worked examples.
graphene
metal oxide film
substrate
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Areal Hole Density | 10000000000000 cm⁻² | graphene |
Related documents with shared materials, methods, properties, or citations.
graphene photodetector
silicon carbide
SiC
molybdenum trioxide
MoO₃
tungsten trioxide
WO₃
graphene oxide
epitaxial graphene
| 0.2 nm |
metal oxide film |
Film Thickness Max | 15 nm | metal oxide film |
Film Thickness | 5 nm | metal oxide film |
Thickness | ≤ 15 nm | — |
Thickness | ≥ 0.2 nm | — |
— | 5.3–6.8 eV | — |
— | 4–4.3 eV | — |
— | ≥ 2.5 eV | — |
Temperature | ≥ 400 K | — |
graphene photodetector
silicon carbide
SiC
molybdenum trioxide
MoO₃
tungsten trioxide
WO₃
graphene oxide
epitaxial graphene
| 0.2 nm |
metal oxide film |
Film Thickness Max | 15 nm | metal oxide film |
Film Thickness | 5 nm | metal oxide film |
Thickness | ≤ 15 nm | — |
Thickness | ≥ 0.2 nm | — |
— | 5.3–6.8 eV | — |
— | 4–4.3 eV | — |
— | ≥ 2.5 eV | — |
Temperature | ≥ 400 K | — |
graphene photodetector
silicon carbide
SiC
molybdenum trioxide
MoO₃
tungsten trioxide
WO₃
graphene oxide
epitaxial graphene
| 0.2 nm |
metal oxide film |
Film Thickness Max | 15 nm | metal oxide film |
Film Thickness | 5 nm | metal oxide film |
Thickness | ≤ 15 nm | — |
Thickness | ≥ 0.2 nm | — |
— | 5.3–6.8 eV | — |
— | 4–4.3 eV | — |
— | ≥ 2.5 eV | — |
Temperature | ≥ 400 K | — |
graphene photodetector
silicon carbide
SiC
molybdenum trioxide
MoO₃
tungsten trioxide
WO₃
graphene oxide
epitaxial graphene
| 0.2 nm |
metal oxide film |
Film Thickness Max | 15 nm | metal oxide film |
Film Thickness | 5 nm | metal oxide film |
Thickness | ≤ 15 nm | — |
Thickness | ≥ 0.2 nm | — |
— | 5.3–6.8 eV | — |
— | 4–4.3 eV | — |
— | ≥ 2.5 eV | — |
Temperature | ≥ 400 K | — |